CN103809388A - Developing method - Google Patents
Developing method Download PDFInfo
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- CN103809388A CN103809388A CN201210438626.1A CN201210438626A CN103809388A CN 103809388 A CN103809388 A CN 103809388A CN 201210438626 A CN201210438626 A CN 201210438626A CN 103809388 A CN103809388 A CN 103809388A
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- shower nozzle
- supporting platform
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Abstract
The invention discloses a developing method for obtaining a photoresist pattern on a semiconductor wafer. In the method, firstly, a developing device and the wafer are provided, and the developing device includes a developing sprinkle nozzle for sprinkling a developing liquid and a wafer chuck which can rotate; the wafer is fixedly arranged on the wafer chuck, and when the wafer rotates along with the wafer chuck, the developing sprinkle nozzle can perform lateral movement above the wafer; and then while the water chuck rotates, the developing sprinkle nozzle moves from the right upside of an initial position of one side of the wafer to the right upside of an ending position of the other side of the wafer, and the wafer is coated with the developing liquid. The method ensures uniform coverage of the developing liquid on the wafer through the rotation of the wafer chuck and the movement of the developing sprinkle nozzle, so that developing on the whole wafer reaches an equilibrium state, the problems of nonuniform coverage of the developing liquid and poor uniformity of a line width during the developing process in the prior art are solved, and the uniformity of the line width is improved.
Description
Technical field
The present invention relates to a kind of developing process of photoresist, be specifically related to a kind of developing method that obtains photoetching offset plate figure on semiconductor wafer.
Background technology
Photoetching process is processing step considerable in whole semiconductor fabrication process.Photoetching process mainly comprises gluing, exposure and development etc., along with wafer size becomes raising large and to development resolution requirement, is also improving for the inhomogeneity requirement of the live width in technique.Wherein, development is very large on the impact of live width uniformity coefficient.Developing method can cause center and the uneven poor problem of live width uniformity coefficient that causes of edge's developer solution covering on wafer often in the past.
Summary of the invention
The object of the present invention is to provide a kind of developing method, the method can be improved the inhomogeneous phenomenon of developing, and improves live width homogeneity simultaneously.
Technical scheme of the present invention is:
A kind of developing method, comprises the steps:
(1) provide developing apparatus and wafer: described developing apparatus comprises the development shower nozzle of spray developing liquid and the wafer-supporting platform that can rotate; Wherein: wafer is fixedly installed on wafer-supporting platform, when wafer rotates along with wafer-supporting platform, develop shower nozzle can be above wafer transverse shifting;
(2) spray developing liquid: when wafer-supporting platform rotation, described development shower nozzle moves to directly over the end position of described wafer opposite side directly over the initial position of described wafer one side, and developer solution is coated on wafer; Wherein: crystal circle center is 10～20cm to the distance of initial position, crystal circle center is 20～40cm to the distance of end position; And while requiring wafer half-twist, development shower nozzle is simultaneously by moving to directly over end position directly over initial position.
Described developer temperatur is 23～24 ℃, and the flow of developer solution is 100～120L/min, and solution level is 0.8～1.2%, developer solution reaction time 30～60s.
The rate travel of described development shower nozzle is 1.2 ~ 10m/min, and spray pressure is 0.2 ~ 0.3MPa.
Its speed of rotation of the wafer-supporting platform of described developing apparatus is 10～5000rpm/min.
Advantage of the present invention and beneficial effect are:
The present invention adopts wafer rotation and the mode that shower nozzle moves simultaneously, can shorten the coating time, reduces developer solution consumption and improve developer solution to cover uneven problem at place of crystal circle center and edge, improves live width homogeneity.
Accompanying drawing explanation
Figure l is schematic top plan view of the present invention.
Fig. 2 is that master of the present invention looks schematic diagram.
In figure: 101-wafer; 102-development shower nozzle; 103-shower nozzle pipe fitting; 201-wafer-supporting platform.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
The schematic diagram of developing method of the present invention as shown in Figure 1-2, the method comprises the following steps: the wafer 101 that first surface is coated with to photoresist and has completed exposure technology is fixed on the wafer-supporting platform 201 of developing apparatus, wafer 101 can rotate along with wafer-supporting platform 201, development shower nozzle 102 is connected with shower nozzle pipe fitting 103, by shower nozzle pipe fitting 103, developer solution is inputed to development shower nozzle 102 and sprays wine again and develop at crystal column surface.The length of development shower nozzle 102 is greater than the diameter of wafer 101.
Before developing, development shower nozzle 102 is positioned at directly over the initial position A point of wafer 101 centers (O point) side, OA=10～20cm, in the time developing shower nozzle 102 spray developing liquid, wafer-supporting platform 201 drives wafer 101 to rotate (wafer-supporting platform 201 speed of rotation are between between 10rpm/min to 5000rpm/min), the shower nozzle 102 that meanwhile develops moves directly over the end position B point of wafer 101 centers (O point) opposite side, the rate travel of this development shower nozzle 102 of OB=10～20cm(is between between 1.2m/min to 10m/min), thus developer solution is evenly coated on wafer.The shower nozzle 102 of developing while guaranteeing wafer 101 half-twist in sprinkling process is simultaneously by moving to (A is less than brilliant diameter of a circle to the distance of B) directly over B point directly over A point, by the rotation of wafer-supporting platform 201 and the mobile developer solution uniform fold guaranteeing on wafer 101 of development shower nozzle 102, and make the development on whole wafer 101 reach an equilibrium state.
Developing method of the present invention has solved developing process developer solution in prior art and has covered the problem of inhomogeneous and live width lack of homogeneity, very high live width homogeneity.
Claims (6)
1. a developing method, is characterized in that: comprise the steps:
(1) provide developing apparatus and wafer: described developing apparatus comprises the development shower nozzle of spray developing liquid and the wafer-supporting platform that can rotate; Wherein: wafer is fixedly installed on wafer-supporting platform, when wafer rotates along with wafer-supporting platform, develop shower nozzle can be above wafer transverse shifting;
(2) spray developing liquid: when wafer-supporting platform rotation, described development shower nozzle moves to directly over the end position of described wafer opposite side directly over the initial position of described wafer one side, and developer solution is coated on wafer.
2. developing method according to claim 1, is characterized in that: crystal circle center is 10～20cm to the distance of initial position, and crystal circle center is 20～40cm to the distance of end position.
3. developing method according to claim 2, is characterized in that: when described wafer half-twist, development shower nozzle is by moving to directly over end position directly over initial position.
4. developing method according to claim 1, is characterized in that: described developer temperatur is 23～24 ℃, and the flow of developer solution is 100～120L/min, and solution level is 0.8～1.2%, developer solution reaction time 30～60s.
5. developing method according to claim 1 and 2, is characterized in that: the rate travel of described development shower nozzle is 1.2 ~ 10m/min, and spray pressure is 0.2～0.3MPa.
6. developing method according to claim 1, is characterized in that: its speed of rotation of the wafer-supporting platform of described developing apparatus is 10～5000rpm/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210438626.1A CN103809388B (en) | 2012-11-06 | 2012-11-06 | Developing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210438626.1A CN103809388B (en) | 2012-11-06 | 2012-11-06 | Developing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103809388A true CN103809388A (en) | 2014-05-21 |
| CN103809388B CN103809388B (en) | 2016-12-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210438626.1A Active CN103809388B (en) | 2012-11-06 | 2012-11-06 | Developing method |
Country Status (1)
| Country | Link |
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| CN (1) | CN103809388B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106200280A (en) * | 2016-09-07 | 2016-12-07 | 深圳清溢光电股份有限公司 | A kind of sheathed developing method coordinated with slit liquid curtain |
| CN108469718A (en) * | 2018-04-20 | 2018-08-31 | 无锡中微掩模电子有限公司 | A kind of developing method and device of mask |
| CN109802643A (en) * | 2018-11-30 | 2019-05-24 | 无锡市好达电子有限公司 | A kind of auxiliary development layout making |
| CN112612188A (en) * | 2020-12-17 | 2021-04-06 | 泉芯集成电路制造(济南)有限公司 | Developing device |
Citations (6)
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| TW454229B (en) * | 1999-04-08 | 2001-09-11 | Tokyo Electron Ltd | Film forming method and film forming apparatus |
| US20020150679A1 (en) * | 2001-04-16 | 2002-10-17 | Tokyo Electron Limited | Coating film forming method and apparatus |
| CN101042535A (en) * | 2006-03-22 | 2007-09-26 | 三星电子株式会社 | Liquid coating apparatus and method thereof |
| US20090135384A1 (en) * | 2007-11-22 | 2009-05-28 | Tokyo Electron Limited | Substrate processing apparatus |
| CN101644903A (en) * | 2008-08-07 | 2010-02-10 | 和舰科技(苏州)有限公司 | Developing solution spray head |
| CN102650835A (en) * | 2011-02-24 | 2012-08-29 | 东京毅力科创株式会社 | Developing method and apparatus using organic-solvent containing developer |
-
2012
- 2012-11-06 CN CN201210438626.1A patent/CN103809388B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW454229B (en) * | 1999-04-08 | 2001-09-11 | Tokyo Electron Ltd | Film forming method and film forming apparatus |
| US20020150679A1 (en) * | 2001-04-16 | 2002-10-17 | Tokyo Electron Limited | Coating film forming method and apparatus |
| CN101042535A (en) * | 2006-03-22 | 2007-09-26 | 三星电子株式会社 | Liquid coating apparatus and method thereof |
| US20090135384A1 (en) * | 2007-11-22 | 2009-05-28 | Tokyo Electron Limited | Substrate processing apparatus |
| CN101644903A (en) * | 2008-08-07 | 2010-02-10 | 和舰科技(苏州)有限公司 | Developing solution spray head |
| CN102650835A (en) * | 2011-02-24 | 2012-08-29 | 东京毅力科创株式会社 | Developing method and apparatus using organic-solvent containing developer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106200280A (en) * | 2016-09-07 | 2016-12-07 | 深圳清溢光电股份有限公司 | A kind of sheathed developing method coordinated with slit liquid curtain |
| CN108469718A (en) * | 2018-04-20 | 2018-08-31 | 无锡中微掩模电子有限公司 | A kind of developing method and device of mask |
| CN109802643A (en) * | 2018-11-30 | 2019-05-24 | 无锡市好达电子有限公司 | A kind of auxiliary development layout making |
| CN112612188A (en) * | 2020-12-17 | 2021-04-06 | 泉芯集成电路制造(济南)有限公司 | Developing device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103809388B (en) | 2016-12-21 |
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Address after: 110168 No. 16 Feiyun Road, Hunnan District, Shenyang City, Liaoning Province Patentee after: Shenyang Core Source Microelectronic Equipment Co., Ltd. Address before: 110168 No. 16 Feiyun Road, Hunnan New District, Shenyang City, Liaoning Province Patentee before: Shenyang Siayuan Electronic Equipment Co., Ltd. |
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