CN107507792A - A kind of wet etching device and method - Google Patents
A kind of wet etching device and method Download PDFInfo
- Publication number
- CN107507792A CN107507792A CN201710707461.6A CN201710707461A CN107507792A CN 107507792 A CN107507792 A CN 107507792A CN 201710707461 A CN201710707461 A CN 201710707461A CN 107507792 A CN107507792 A CN 107507792A
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- etching
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- groove
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The present invention provides a kind of wet etching device and method, and the device includes：Etching groove, spray equipment, multiple rollers；Roller is arranged on the inside of etching groove, for carrying substrate to be etched；Spray equipment is arranged on the top of roller, for spraying etching liquid；Etching groove is stored with etching liquid, and etching liquid liquid level is higher than substrate.Wet etching device and method provided by the invention, it is ensured that the homogeneity of base plate carving and corrosion, also can guarantee that the etch rate of substrate.
Description
Technical field
The present invention relates to technical field of liquid crystal display, more particularly to a kind of wet etching device and method.
Background technology
In the production process of liquid crystal display panel, when preparing circuit structure on substrate, the applying conductive material on substrate
After material, then after by photoresist in conductive material layer graphing, photoresist layer is exposed, develop, then to substrate
Surface performs etching, and obtains required circuit structure.Wherein, dry etching and wet etching side can be used by substrate being performed etching
Formula, when being performed etching to substrate using wet etching mode, there are two kinds of wet etching modes again.The first is that shower nozzle sprays toward substrate surface
Liquid pattern, i.e., substrate is sent to below shower nozzle, using shower nozzle spray etching liquid to substrate surface, substrate performed etching, but
It is that shower nozzle can not ensure that the etching hydraulic coupling born inside its internal any angle is homogeneous etc., and then shower nozzle can not be ensured
The flow for the etching liquid that any angle sprays is identical, and because shower nozzle is spraying etching liquid, substrate surface displacement etching always
The speed ratio of liquid is very fast, so the etching precision of substrate can be caused also to be not easily controlled, and the bad control of etching homogeneity be present and asks
Topic.Certainly, under this kind of wet etching mode, when substrate moves above roller, the liquid curtain of etching liquid is sprayed by liquid cutter, so as to
Can be in the surface layer overlay etching liquid of substrate.But due to being soaked in the cavity residing for substrate without etching liquid, the etching liquid can
To flow to substrate exterior domain quickly, and the etching liquid of substrate surface, in flowing, its flow is variant, the difference of substrate surface
The etch rate in region is different, and the effect of etching has larger difference, causes the etching of substrate surface uneven.
Another wet etching mode, is that etching liquid is directly filled in equipment cavity, substrate is immersed in etching liquid
Row etching, this kind of etching mode can increase the consumption of etching liquid, and the replacement rate of the etching liquid of substrate surface is not fast enough,
Cause that base plate carving and corrosion speed is relatively slow, etching is less efficient, it is again long the time required to etch substrate surface thickness film layer, influence to carve
The efficiency of erosion.
The content of the invention
In order to solve the above technical problems, the present invention provides a kind of wet etching device and method, it is ensured that base plate carving and corrosion
Homogeneity, it also can guarantee that the etch rate of substrate.
A kind of wet etching device provided by the invention, including：
Store the etching groove of etching liquid；
Multiple rollers of the inside of the etching groove are arranged on, are treated for carrying and transmitting below etching liquid liquid level
The substrate of etching；
The spray equipment of the top of the roller is arranged on, for spraying etching liquid to the substrate.
Preferably, in the side wall of the etching groove, it is provided with the pre-determined distance higher than the substrate and is carved for discharging
Lose the neck of liquid.
Preferably, each roller is respectively positioned on identical height, and is parallel to each other between the roller.
Preferably, the spray equipment includes some shower nozzles and some conduits, is parallel to each other between the conduit, institute
State shower nozzle to be evenly distributed on the conduit, and turned between the shower nozzle and the conduit.
Preferably, in addition to some transmission shafts being parallel to each other, the transmission shaft can be fixed on around itself axial rotation
On the etching groove, the roller is fixed on the transmission shaft, and between the roller on the same transmission shaft between
Away from equal.
Preferably, liquid cutter is also included, the liquid cutter is fixed on the etching groove and the liquid cutter is higher than the substrate,
For spraying the liquid curtain of etching liquid.
Preferably, the pre-determined distance is 3~8 millimeters.
The present invention also provides a kind of wet etch process, comprises the steps：
Substrate to be etched is transmitted by roller in etching groove, the substrate is located at the lower section of spray equipment；
Filling etching liquid in toward etching groove, until etching liquid liquid level is higher than the substrate, and etching liquid liquid level and the base
The distance between plate reaches preset value；
Etching liquid is sprayed to substrate by spray equipment, until the base plate carving and corrosion is completed.
Preferably, the scope of the preset value is 3~8 millimeters.
Preferably, also comprise the steps：
The line width for the circuit for etching to obtain on the substrate is detected, when the line width meets default line width size, is then sentenced
The etching processing procedure of the disconnected substrate meets the requirements；
Filling etching liquid in the past etching groove, it is specially：
Etching liquid liquid curtain is sprayed against the etching groove by liquid cutter.
Implement the present invention, have the advantages that：Substrate to be etched is carried on roller, fills and carves in etching groove
Liquid is lost, allows etching liquid to cover substrate to be etched, allows substrate to be immersed in etching liquid, it is ensured that substrate surface etches homogeneous
Property, secondly, etching liquid is sprayed into etching groove further through the spray equipment above roller, can improve substrate surface etching liquid
Displacement efficiency, so as to improve the etch rate of substrate.Therefore, wet etching device and method provided by the invention can both be protected
The homogeneity of substrate surface etching is demonstrate,proved, the etch rate of substrate surface can be improved again.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structural representation of wet etching device provided by the invention.
Embodiment
The present invention provides a kind of wet etching device, as shown in figure 1, the wet etching device includes：Etching groove 1, spray equipment
3rd, multiple rollers 2.
Etching groove 1 is stored with etching liquid；
Roller 2 is arranged on the inside of etching groove 1, for carrying and transmitting the base to be etched below etching liquid liquid level
Plate 4.The etching liquid stored in etching groove 1 is as shown in label 6 in Fig. 1.
Spray equipment 3 is arranged on the top of roller 2, for spraying etching liquid to substrate 4.
Further in the side wall of etching groove 1, it is provided with the pre-determined distance higher than substrate 4 for discharging etching liquid
Neck 5, the height of etching liquid liquid level in etching groove 1 is adjusted by neck 5, make the spacing between etching liquid liquid level and substrate 4
For pre-determined distance.
When spray equipment 3 is spraying etching liquid always, the etching liquid in etching groove 1 can increase always, thus higher than
Neck 5 is set at the pre-determined distance of roller 2, when the liquid level of etching liquid is higher than the neck 5, etching liquid is flowed out by neck 5, from
And ensure that the liquid level of the etching liquid in etching groove 1 is stable, secondly, etching can be observed with the highly intuitive of neck 5
Liquid liquid level.Because the top of roller 2 has spray equipment 3 spraying etching liquid, cause the etching liquid liquid level in etching groove 1 attached
Near replacement rate is higher, and the replacement rate away from etching liquid liquid level is relatively low, so as to the etch rate near etching liquid liquid level
Higher, the etch rate away from etching liquid liquid level is relatively low, and the stabilization of etching liquid liquid level in etching groove 1 is maintained by the neck 5,
Ensure that the etch rate of substrate 4 is stable, so as to preferably grasp the time needed for etching.
AL films (i.e. aluminium film) or ITO (Indium Tin Oxide, tin indium oxide) film can be plated on substrate 4, then
The coated on one side photoresistance of film is plated on substrate 4, graphing, after being exposed, developing, substrate 4 has been moved on roller 2
Carry out wet etching.If what is plated on substrate 4 is AL films, etching liquid can be that nitric acid, phosphoric acid, acetic acid, deionized water are mixed
Obtained solution, wherein, phosphoric acid, nitric acid, acetic acid, the mass percent shared by deionized water are respectively 67%, 5%, 10%,
18%.First pass through nitric acid to aoxidize AL films, obtain alundum (Al2O3) film, then can be molten by alundum (Al2O3) film by phosphoric acid
Take off, wherein effect of the acetic acid as buffer, suppress the chemical reaction of whole process, prevent from reacting too fast, so that reach can
The purpose of good control etch amount.
If what is plated on substrate 4 is ito film, etching liquid can be oxalic acid and the mixed solution of deionized water, its mesoxalic acid
Shared mass percent is 3%~5%.
Further, each roller 2 is respectively positioned on identical height, and is parallel to each other between roller 2.
Further, spray equipment 3 includes some shower nozzles 31 and some conduit (not shown)s, phase between conduit
Mutually parallel, shower nozzle 31 is evenly distributed on conduit, and conducting is connected between shower nozzle 31 and conduit.Be passed through into conduit etching liquid it
Afterwards, etching liquid flows into each shower nozzle 31 from conduit, is flowed out by each shower nozzle 31.
Further, wet etching device also includes some transmission shaft (not shown)s being parallel to each other, and transmission shaft can be around
It is fixed on etching groove 1 to itself axial rotation, roller 2 is fixed on transmission shaft, by the rotation of transmission shaft, drives roller 2
Rotation, so as to drive the movement of the substrate 4 on roller 2, and the spacing between the adjacent roller 2 on same transmission shaft is homogeneous
Deng.In general, roller 2 is evenly distributed on different transmission shafts, some rollers are equally spacedly distributed with same transmission shaft
2。
Further, wet etching device also includes liquid cutter (not shown), and liquid cutter is fixed on etching groove 1 and liquid cutter
Position be higher than substrate 4 position, for spraying the liquid curtain of etching liquid., can be with by liquid cutter toward spraying etching liquid in etching groove 1
Make Fast Filling etching liquid in etching groove 1, until the liquid level and neck 5 of etching liquid are highly identical.
Further, pre-determined distance is 3~8 millimeters.Preferably, pre-determined distance is 5 millimeters.When pre-determined distance is 3~8 millis
Meter Shi, the substrate 4 carried on roller 2 can be covered all, when substrate 4 is fully immersed in etching liquid, it is ensured that
The homogeneity of etching.When pre-determined distance is excessive, when the etching liquid that spray equipment 3 sprays out flows into etching groove 1, in etching groove 1
Etching liquid replacement rate near the liquid level of etching liquid is higher, and apart from liquid level remote position etching liquid replacement rate compared with
It is low, the etch rate of substrate 4 can be influenceed, therefore pre-determined distance is set as that 3~8 millimeters are ideal value, it is specific pre-
If specifically determined again apart from according to the needs being etched into.
The present invention also provides a kind of wet etch process, and this method comprises the steps：
Substrate 4 to be etched is transmitted by roller 2 in etching groove 1, substrate 4 is located at the lower section of spray equipment 3；
Toward filling etching liquid in etching groove 1, until the liquid level of etching liquid be higher than substrate 4, and etching liquid liquid level and substrate 4 it
Between distance reach preset value；
Etching liquid is sprayed to substrate 4 by spray equipment 3, until the etching of substrate 4 is completed.In general, can be according to right
The circuit line width size obtained after etching liquid and substrate 4 etching answered, etch period corresponding to setting；
Substrate 4 starts to etch, until after this time, it can be determined that the etching of substrate 4 is completed.
Further, the scope of preset value is 3~8 millimeters.
Further, wet etch process also comprises the steps：
The line width for the circuit for etching to obtain on the substrate 4 is detected, when line width meets default line width size, then judges base
The etching processing procedure of plate 4 meets the requirements, and is that the time needed for the etching processing procedure meets the requirements specifically.Obtained by etching
When the line width of circuit is more than default line width size, it can also continue to perform etching substrate 4, until the line width of circuit meets to preset
Line width size.
Filling etching liquid in toward etching groove 1, it is specially：
Etching liquid liquid curtain is sprayed against etching groove 1 by liquid cutter, while can also be rotated by transmission shaft with roller 2,
To drive substrate 4 to be moved below liquid cutter.
To sum up, wet etching device and method provided by the invention, substrate 4 to be etched is carried on roller 2, in etching groove
Etching liquid is filled in 1, allows etching liquid to cover substrate 4 to be etched, allows substrate 4 to be immersed in etching liquid, it is ensured that the table of substrate 4
The homogeneity of face etching, secondly, etching liquid is sprayed into etching groove 1 further through the spray equipment 3 of the top of roller 2, can be improved
The displacement efficiency of the surface etch liquid of substrate 4, so as to improve the etch rate of substrate 4.Therefore, wet etching provided by the invention
Device and method can both ensure the homogeneity of the surface etch of substrate 4, can improve the etch rate on the surface of substrate 4 again.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to is assert
The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's
Protection domain.
Claims (10)
- A kind of 1. wet etching device, it is characterised in that including：Store the etching groove (1) of etching liquid；Multiple rollers (2) of the inside of the etching groove (1) are arranged on, for carrying and transmitting below etching liquid liquid level Substrate (4) to be etched；The spray equipment (3) of the top of the roller (2) is arranged on, for the substrate（4）Spray etching liquid.
- 2. wet etching device according to claim 1, it is characterised in that in the side wall of the etching groove (1), higher than institute State the neck (5) being provided with the pre-determined distance of substrate (4) for discharging etching liquid.
- 3. wet etching device according to claim 1, it is characterised in that each roller (2) is respectively positioned on identical height, And it is parallel to each other between the roller (2).
- 4. wet etching device according to claim 1, it is characterised in that the spray equipment (3) includes some shower nozzles (31) and some conduits, it is parallel to each other between the conduit, the shower nozzle (31) is evenly distributed on the conduit, and described Turned between shower nozzle (31) and the conduit.
- 5. wet etching device according to claim 1, it is characterised in that also including some transmission shafts being parallel to each other, institute Stating transmission shaft can be fixed on around itself axial rotation on the etching groove (1), and the roller (2) is fixed on the transmission shaft On, and the spacing between the roller (2) on the same transmission shaft is equal.
- 6. wet etching device according to claim 1, it is characterised in that also include liquid cutter, the liquid cutter is fixed on institute State on etching groove (1) and the liquid cutter is higher than the substrate (4), for spraying the liquid curtain of etching liquid.
- 7. wet etching device according to claim 2, it is characterised in that the pre-determined distance is 3 ~ 8 millimeters.
- 8. a kind of wet etch process, it is characterised in that comprise the steps：In etching groove（1）Inside pass through roller（2）Transmit substrate to be etched（4）, make the substrate（4）Positioned at spray equipment（3） Lower section；Toward filling etching liquid in etching groove (1), until etching liquid liquid level is higher than the substrate (4), and etching liquid liquid level with it is described The distance between substrate (4) reaches preset value；By spray equipment (3) to substrate（4）Etching liquid is sprayed, until the substrate (4) etching is completed.
- 9. wet etch process according to claim 7, it is characterised in that the scope of the preset value is 3 ~ 8 millimeters.
- 10. wet etch process according to claim 7, it is characterised in that also comprise the steps：The line width for the circuit for etching to obtain on the substrate (4) is detected, when the line width meets default line width size, is then judged The etching processing procedure of the substrate (4) meets the requirements；Filling etching liquid in the past etching groove (1), it is specially：Etching liquid liquid is sprayed against the etching groove (1) by liquid cutter Curtain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710707461.6A CN107507792A (en) | 2017-08-17 | 2017-08-17 | A kind of wet etching device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710707461.6A CN107507792A (en) | 2017-08-17 | 2017-08-17 | A kind of wet etching device and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107507792A true CN107507792A (en) | 2017-12-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710707461.6A Pending CN107507792A (en) | 2017-08-17 | 2017-08-17 | A kind of wet etching device and method |
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| Country | Link |
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| CN (1) | CN107507792A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993529A (en) * | 2019-11-14 | 2020-04-10 | Tcl华星光电技术有限公司 | Wet etching device and substrate wet etching method |
| CN111977642A (en) * | 2019-05-22 | 2020-11-24 | 无锡格菲电子薄膜科技有限公司 | Soaking and spraying etching method and equipment |
| CN114804920A (en) * | 2021-01-18 | 2022-07-29 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid etching machine and control mode thereof |
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| KR20040017090A (en) * | 2002-08-20 | 2004-02-26 | 주식회사 디엠에스 | Wet Station having improved gas mixing means |
| KR20050113042A (en) * | 2004-05-28 | 2005-12-01 | 삼성에스디아이 주식회사 | Wet etching method |
| KR100803326B1 (en) * | 2006-08-31 | 2008-02-13 | 세메스 주식회사 | Wet etcher having a division plate |
| WO2008111729A1 (en) * | 2007-03-09 | 2008-09-18 | Innoroot Co., Ltd. | Method of thinning substrate, apparatus for thinning substrate and system having the same |
| US20160254162A1 (en) * | 2013-10-30 | 2016-09-01 | SCREEN Holdings Co., Ltd. | Sacrificial-film removal method and substrate processing device |
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2017
- 2017-08-17 CN CN201710707461.6A patent/CN107507792A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040017090A (en) * | 2002-08-20 | 2004-02-26 | 주식회사 디엠에스 | Wet Station having improved gas mixing means |
| KR20050113042A (en) * | 2004-05-28 | 2005-12-01 | 삼성에스디아이 주식회사 | Wet etching method |
| KR100803326B1 (en) * | 2006-08-31 | 2008-02-13 | 세메스 주식회사 | Wet etcher having a division plate |
| WO2008111729A1 (en) * | 2007-03-09 | 2008-09-18 | Innoroot Co., Ltd. | Method of thinning substrate, apparatus for thinning substrate and system having the same |
| US20160254162A1 (en) * | 2013-10-30 | 2016-09-01 | SCREEN Holdings Co., Ltd. | Sacrificial-film removal method and substrate processing device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111977642A (en) * | 2019-05-22 | 2020-11-24 | 无锡格菲电子薄膜科技有限公司 | Soaking and spraying etching method and equipment |
| CN111977642B (en) * | 2019-05-22 | 2023-01-10 | 无锡格菲电子薄膜科技有限公司 | Soaking and spraying etching method and equipment |
| CN110993529A (en) * | 2019-11-14 | 2020-04-10 | Tcl华星光电技术有限公司 | Wet etching device and substrate wet etching method |
| CN114804920A (en) * | 2021-01-18 | 2022-07-29 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid etching machine and control mode thereof |
| CN114804920B (en) * | 2021-01-18 | 2024-03-15 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid corrosion machine and control mode thereof |
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Application publication date: 20171222 |