CN109802643A - A kind of auxiliary development layout making - Google Patents
A kind of auxiliary development layout making Download PDFInfo
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- CN109802643A CN109802643A CN201811450862.9A CN201811450862A CN109802643A CN 109802643 A CN109802643 A CN 109802643A CN 201811450862 A CN201811450862 A CN 201811450862A CN 109802643 A CN109802643 A CN 109802643A
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- interdigital transducer
- electrode
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- square body
- auxiliary development
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Abstract
The invention discloses a kind of auxiliary development layout makings, belong to filter production field.This method includes that auxiliary development domain is determined according to the master figure of SAW filter, and the electrode, white space and lead electrode of corresponding interdigital transducer are provided on the auxiliary development domain；On auxiliary development domain, increase solid square body gasket around the electrode of the interdigital transducer, the solid square body gasket is covered with around the interdigital transducer, and the distance between reflecting grating of the solid square body gasket and the interdigital transducer is the half in the period of the interdigital transducer；It solves existing development domain to be easy to enable developer solution reaction rate different problems, the reaction rate for having reached each region after enabling spray developing liquid is identical, improves the consistency of product, improves properties of product, improves product quality.
Description
Technical field
The present embodiments relate to filter manufacturing field, in particular to a kind of auxiliary development layout making.
Background technique
SAW filter is the pressure using piezoelectric quartzes crystal oscillator materials such as piezoelectric ceramics, lithium niobate, quartz
A kind of transduction type passive bandpass filters made of the physical characteristic of electrical effect and acoustic surface wave propagation.
With the development of technology, higher and higher to the frequency requirement of SAW filter, in order to meet high-frequency want
It asks, needs the finger of SAW filter more and more finer, therefore, developing rate, solution level are to the sound surface of high frequency
The influence of wave filter is also bigger.
Summary of the invention
In order to solve problems in the prior art, the embodiment of the invention provides a kind of auxiliary development layout makings.It should
Technical solution is as follows:
In a first aspect, a kind of auxiliary development layout making is provided, this method comprises:
Auxiliary development domain is determined according to the master figure of SAW filter, and the auxiliary, which is developed, to be provided on domain pair
Answer the electrode, white space and lead electrode of interdigital transducer；
On auxiliary development domain, increase solid square body gasket around the electrode of the interdigital transducer, it is described
Solid square body gasket is covered with around the interdigital transducer, and the reflecting grating of the solid square body gasket and the interdigital transducer it
Between distance be the interdigital transducer period half.
Optionally, on auxiliary development domain, solid square body gasket is not provided with around the lead electrode.
Optionally, the electrode width of the interdigital transducer is equal to electrode gap.
Technical solution provided in an embodiment of the present invention has the benefit that
On auxiliary development domain, increase solid square body gasket, solid square body gasket cloth around the electrode of interdigital transducer
Around full interdigital transducer, under the premise of having no need to change the design scheme of development domain, enable each after spray developing liquid
The reaction rate in region is identical, improves the consistency of product, improves properties of product, improves product quality.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of flow chart of auxiliary development layout making shown according to an exemplary embodiment；
Fig. 2 is a kind of schematic diagram of the master figure of SAW filter device shown according to an exemplary embodiment；
Fig. 3 is a kind of structural schematic diagram of interdigital transducer shown according to an exemplary embodiment；
Fig. 4 is a kind of schematic diagram of auxiliary development domain shown according to an exemplary embodiment；
Fig. 5 is solid square body gasket and interdigital transducer on a kind of auxiliary development domain shown according to an exemplary embodiment
Position details schematic diagram between electrode.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Referring to FIG. 1, it illustrates the flow charts of auxiliary development layout making provided by one embodiment of the present invention.
As shown in Figure 1, auxiliary development layout making may comprise steps of:
Step 101, auxiliary development domain is determined according to the master figure of surface acoustic wave device.
The electrode, white space and lead electrode of corresponding interdigital transducer are provided on auxiliary development domain.
Under normal circumstances, white space varies.
Step 102, on auxiliary development domain, increase solid square body gasket, reality side around the electrode of interdigital transducer
Body gasket is covered with around interdigital transducer, and the distance between reflecting grating of solid square body gasket and interdigital transducer is interdigital changes
Half around energy device.
On auxiliary development domain, solid square body gasket is not provided with around lead electrode.
The electrode width that interdigital transducing rises is equal to electrode gap.
Optionally, a solid square body gasket is arranged in a white space.
By taking frequency is the SAW filter of 2500M as an example, chip is 48 degree of cholic acid lithium, reflecting grating and interdigital transducing
Device has same metallization ratio, is 0.6；It sets interdigital transducer to refer to as 200,40 reflecting gratings, period 1.472um, fork
The lines of finger transducer are 0.437um, gap 0.298um；Solution level is 238 developer solutions, developing time 35S.
Development liquid measure number directly affect its reaction rate, will affect the thickness of the finger of interdigital transducer, therefore, directly
Connect the performance for influencing SAW filter.
Corresponding plate-making scheme is determined according to the master figure of SAW filter, and in one example, master figure is such as
Shown in Fig. 2.Production auxiliary development version can make structure shown in Fig. 2 uniform, it is enabled sufficiently to react in production with developer solution
It is uniformly contacted in journey, enables the interdigital reaction rate of each interdigital transducer almost the same.
The parameter of interdigital transducer has period N, sound aperture W, inter-digital electrode width b, interdigital electrode interval a.Fig. 3 is shown
One uniform interdigital electrode, i.e. sound aperture W are constant, and inter-digital electrode width b is equal to interdigital electrode interval a.Electrode gap a
The centre frequency f of interdigital transducer has been codetermined with the coefficient of piezoelectric material.Therefore, high-frequency monophone surface wave filter
In the case where piezoelectric material is certain, the electrode width b of interdigital transducer determines the size of centre frequency f with electrode gap a,
Therefore the electrode width b of the interdigital transducer of high-frequency SAW filter and electrode gap a are comparatively small.
In master figure as shown in Figure 2, there is white space 1., 2., 3., 4., 5., white space 1., it is 2. shared
Area is larger, and the area of white space 3., 4., 5. shared is smaller.White space in interdigital transducer device is the institute of developer solution
Locating.When spray developing liquid, the ratio of the developer solution of white space 1., 2. compares with respect to the amount of developer solution at other regions
It is high.Due to high frequency SAW filter generally be single layer negative-working photoresist technology, when photoetching terminate the part of post-exposure with
Developer solution can generate chemical reaction, and after reacting a period of time, the developer solution of white space 1., 2. is relatively more, and reaction rate is agreed
It is fixed inconsistent with the reaction rate of the interdigital transducer in other regions, to influence the resonance frequency of single interdigital transducer, shadow
The overall performance of sound surface wave filter.
In order to improve the consistency of product, increase solid square body gasket A, solid square body gasket in the surrounding them of interdigital transducer
A is covered with around interdigital transducer, as shown in figure 4, and the distance between solid square body gasket A and the reflecting grating of interdigital transducer be
The half in the period of interdigital transducer, as shown in Figure 5.
As shown in figure 4, being not provided with solid square body gasket around lead electrode 31,32,33,34,35,36.
It should be understood that the serial number of the above embodiments of the invention is only for description, do not represent the advantages or disadvantages of the embodiments.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (3)
- The layout making 1. a kind of auxiliary is developed, which is characterized in that the described method includes:Auxiliary development domain is determined according to the master figure of SAW filter, is provided with corresponding fork on the auxiliary development domain Electrode, white space and the lead electrode of finger transducer；On auxiliary development domain, increase solid square body gasket, the reality side around the electrode of the interdigital transducer Body gasket is covered with around the interdigital transducer, and between the solid square body gasket and the reflecting grating of the interdigital transducer Distance is the half in the period of the interdigital transducer.
- The layout making 2. auxiliary according to claim 1 is developed, which is characterized in that in auxiliary development domain On, solid square body gasket is not provided with around the lead electrode.
- The layout making 3. auxiliary according to claim 1 is developed, which is characterized in that the electrode of the interdigital transducer Width is equal to electrode gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811450862.9A CN109802643B (en) | 2018-11-30 | 2018-11-30 | Auxiliary development layout manufacturing method |
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| CN201811450862.9A CN109802643B (en) | 2018-11-30 | 2018-11-30 | Auxiliary development layout manufacturing method |
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| CN109802643A true CN109802643A (en) | 2019-05-24 |
| CN109802643B CN109802643B (en) | 2020-09-08 |
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| CN109802643B (en) | 2020-09-08 |
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