CN208297928U - A kind of nozzle for realizing improvement nanoscale lithography process performance - Google Patents
A kind of nozzle for realizing improvement nanoscale lithography process performance Download PDFInfo
- Publication number
- CN208297928U CN208297928U CN201820599742.4U CN201820599742U CN208297928U CN 208297928 U CN208297928 U CN 208297928U CN 201820599742 U CN201820599742 U CN 201820599742U CN 208297928 U CN208297928 U CN 208297928U
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- Prior art keywords
- dispersion
- nozzle
- ring
- center
- endless path
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Nozzles (AREA)
Abstract
The utility model belongs to photoetching nozzle field, and in particular to and it is a kind of for realizing the nozzle for improving nanoscale lithography process performance, including supply pipe and spray head, to provide minus developer solution；The spray head is connected to the supply pipe；The spray head includes a spray-type sprayer body, the spraying area of the spray-type sprayer body have central dispersion hole at the center, using the center as be in the first endless path of circle center dispersion shape distribution several first ring dispersion holes and using the center as be in the second endless path of circle center dispersion shape distribution several second ring dispersion holes, it passes through the distribution of control minus developer solution dosage in the showerhead, effectively realize that minus developer solution is evenly dispersed, and the structure of the application nozzle is simple and convenient to operate, is easy to repair.
Description
Technical field
The utility model belongs to semiconductor lithography nozzle field, and in particular to a kind of for realizing improvement nanoscale lithography
The nozzle of processing performance.
Background technique
Using photo-chemical reaction principle and chemistry, physical etchings method in IC manufacturing, circuitous pattern is transmitted
Onto single-crystal surface or dielectric layer, the technology of effective graphical window or functional graphic is formed.Particularly needing to etch
Substrate on coat optical cement layer, exposure, then by coating developer solution on optical cement layer, unwanted optical cement layer is reacted away simultaneously
Removal；Later again using optical cement layer as exposure mask, the significant dimensions of needs are etched.In actual production, critical size (Critical
Dimension, CD) size whether will unanimously directly affect the quality of wafer, difference, which crosses conference, reduces the yield of wafer.And mesh
Nozzle used in preceding sprinkling minus developer solution is straight type nozzle as shown in Figs. 1-2, is developed using minus when straight type nozzle
Rate is too fast and without saturation time.Using when straight type nozzle crystal circle center position disperse developer solution during, center CD can be made
Change higher than other positions (as shown in Figure 3-4).
To make wafer size have consistency, disclosed in Chinese patent CN202794853U " developing apparatus ", by adding
Add an air-blowing nozzle, the developer solution for being coated in crystal column surface center is brushed with gas, it is made to be dispersed in wafer table
Face makes crystal circle center consistent with edge development effect.But it requires the mobility that developer solution has had, and air-blowing nozzle is carrying out
The selection of the selection of gas, the dynamics brushed and developer solution has absolute correlation when brushing.Also there is Chinese patent
" developing apparatus of column spray developing and fog spray developing optionally " that CN1782887A is announced can be selected when developing spraying
Being sprayed in a manner of misty can also select to spray in a manner of column.But structure is complicated for its device, and using when need to switch, nothing
The consistency of wafer size is completely secured in method.But either Chinese patent CN202794853U or Chinese patent CN1782887A
Nozzle cannot be set to meet the performance requirement of advanced photoetching process.
Utility model content
In order to overcome above-mentioned various deficiencies, the utility model provides a kind of for realizing improvement nanoscale lithography process
The nozzle of energy, effectively realization minus developer solution is evenly dispersed, and structure is simple and convenient to operate, is easy to repair.
The function of the utility model is achieved in that a kind of for realizing the spray for improving nanoscale lithography process performance
Mouth, including supply pipe and spray head, to provide minus developer solution；The spray head is connected to the supply pipe；The spray head includes
One spray-type sprayer body, the spraying area of the spray-type sprayer body have central dispersion hole at center, with the center
For several first ring dispersion holes distributed in the first endless path of circle center in dispersion shape and using the center as circle center
In several second ring dispersion holes of dispersion shape distribution in second endless path, the internal diameter of first endless path is less than second ring
The internal diameter in path, the aperture of the second ring dispersion hole are greater than the aperture of the first ring dispersion hole, the first ring dispersion hole
Aperture be greater than the aperture of the central dispersion hole, and the central dispersion hole to the first ring dispersion hole is first to connect
Line, the center dispersion hole to the second ring dispersion hole are the second line, and second line is located at two neighboring described the
It does not overlap between one line and mutually.
As the improved technical solution of the utility model, second line is divided equally between two neighboring first line
Angle.
As the improved technical solution of the utility model, the diameter of the spraying area of the spray-type sprayer body between
80-120mm。
As the improved technical solution of the utility model, any hole count of the second ring dispersion hole is all not less than four.
As the improved technical solution of the utility model, it is described center dispersion hole diameter be 0.4-0.8mm, several first
The diameter of ring dispersion hole is 0.6-1.0mm, the diameter 1.2-1.4mm of several second ring dispersion holes.
As the improved technical solution of the utility model, the first endless path diameter is 38-42mm, second loop
The diameter diameter big 26-34mm of the first endless path diameter.
It further include using the center to be in the third endless path of circle center as the improved technical solution of the utility model
Several third ring dispersion holes of dispersion shape distribution；Several third ring dispersion holes are corresponding with several first ring dispersion holes to be set
It sets.
It is straight where third endless path diameter second endless path as the improved technical solution of the utility model
The big 23-42mm of diameter.
As the improved technical solution of the utility model, the supply pipe includes the first supply pipe and the second supply pipe, institute
The first supply pipe is stated be connected to the central dispersion hole, several second ring dispersion holes, if second supply pipe with it is described
Dry first ring dispersion hole connection.
Beneficial effect
The utility model is connected to several ring spray heads (using sprinkle nozzle nozzle) using supply pipe, controls the distribution side of spray head
Formula guarantees the uniformity of minus developer solution sprinkling, minus developing rate is effectively ensured.Further, the application is by spray head center
The dispersion hole at place and centered on spray head center in dispersion shape several ring dispersion holes use different-diameter hole, effectively control
The sendout of minus developer solution.Further more, the application uses the first relatively independent supply pipe from the second supply pipe on different rings
Dispersion hole for minus developer solution, the sendout of auxiliary control minus developer solution.To sum up, the nozzle of the application efficiently solves
The non-uniform problem of crystal circle center CD in advanced photoetching process.
Detailed description of the invention
The structural schematic diagram of Fig. 1 straight type nozzle in the prior art.
The profiling liquid spout use state diagram of minus in Fig. 2 straight type nozzle in the prior art.
The use state diagram of Fig. 3 straight type nozzle in the prior art.
The using renderings of Fig. 4 straight type nozzle in the prior art.
The structural schematic diagram of Fig. 5 the application nozzle.
Fig. 6 the application nozzle uses schematic diagram one.
Fig. 7 the application nozzle uses schematic diagram two.
The using renderings of Fig. 8 the application nozzle.
The structural schematic diagram of Fig. 9 the application spray-type sprayer body.
Another structural schematic diagram of Figure 10 the application nozzle.
In figure, 1,2 gas blowout mouth of N；2, irrigation spout；3, the profiling liquid spout of minus；4, spray head；5, supply pipe；51,
One supply pipe；52, the second supply pipe；A, central dispersion hole；B, the first ring dispersion hole；C, the second ring dispersion hole.
Specific embodiment
It is described in detail referring now to the most preferred embodiment of the utility model, among example is shown graphically in the attached figures.
As shown in figures 5-9, implemented according to the utility model for realizing the nozzle one for improving nanoscale lithography process performance
Example, the nozzle (such as 5-7) includes supply pipe 5 and spray head 4；Including supply pipe 5 and spray head 4, to provide minus developer solution；This
Supply pipe 5 described in embodiment and the spray head 4 collectively constitute sprinkle nozzle nozzle, and the spray head 4 connects with the supply pipe 5
It is logical；The spray head 4 includes a spray-type sprayer body, and the spraying area of the spray-type sprayer body (as shown in Figure 9) is in being in
Central dispersion hole A at the heart, using the center as be in the first endless path of circle center dispersion shape distribution several first rings point
Dissipate hole B and using the center as in the second endless path of circle center be in dispersion shape distribution several second ring dispersion hole C, institute
The internal diameter for stating the first endless path is less than the internal diameter of second endless path, and the aperture of the second ring dispersion hole C is greater than described the
The aperture of one ring dispersion hole, the aperture of the first ring dispersion hole B are greater than the aperture of the central dispersion hole A, and it is described in
Centre dispersion hole A is the first line to the first ring dispersion hole, and the center dispersion hole to the second ring dispersion hole C is second
Line, second line do not overlap between two neighboring first line and mutually, to realize control minus development
The sendout of liquid can obtain the minus developer solution uniformly rationally dispersed after controlling minus developer solution after setting technological parameter, into
And make CD obtained more uniform (as shown in Figure 8).Preferably, any hole count of the second ring dispersion hole C is all not less than
Four.
Preferably, second line divides equally the angle between two neighboring first line.Basis in practical application
Spraying area size, may will also include using the center as in the third endless path of circle center be in dispersion shape distribution several thirds
Ring dispersion hole；Several third ring dispersion holes are correspondingly arranged with several first ring dispersion holes.
In the present embodiment, the diameter of the spraying area of the spray-type sprayer body is between 80-120mm.Specific design
When, the big center dispersion bore dia specification 38-42mm of the first endless path diameter, the big institute of the second endless path diameter
State the first endless path diameter 26-34mm, the big second endless path diameter 23-42mm of the third endless path diameter.And institute
The diameter for stating central dispersion hole A is 0.4-0.8mm, and the diameter of several first ring dispersion hole B is 0.6-1.0mm, several second rings
The diameter 1.2-1.4mm of dispersion hole C；The first endless path diameter is 38-42mm, the second endless path diameter more described the
The one big 26-34mm of endless path diameter；The big 23-42mm of diameter where third endless path diameter second endless path.
As shown in Figure 10, improve another implementation of nozzle of nanoscale lithography process performance according to the utility model
Example, the supply pipe 5 include the first supply pipe 51 and the second supply pipe 52, first supply pipe 51 and the central dispersion hole
A, several second ring dispersion hole C connections, second supply pipe 52 are connected to several first ring dispersion hole B.
First supply pipe 51 is set to work independently with second supply pipe 52 in order to realize, first supply
Pipe 51 and second supply pipe 52 are connected to two different electrical powers, it is therefore an objective to the two be made to have different electric current and electricity
Pressure；Simultaneously in order to enable first supply pipe 51 has different sprays from the minus developer solution that second supply pipe 52 provides
The amount of spilling, first supply pipe 51 are equipped with first flow valve；Second supply pipe 52 is equipped with second flow valve.
In addition, although being explained in detail at this to the utility model, it should be understood that wanted without departing from appended right
Under the premise of the spirit and scope for the utility model for asking book to define can to carry out various changes, replacement and change.
Claims (9)
1. it is a kind of for realizing the nozzle for improving nanoscale lithography process performance, including supply pipe and spray head, to provide minus
Developer solution；The spray head is connected to the supply pipe；It is characterized in that, the spray head includes a spray-type sprayer body, the spray
The spraying area for spilling formula sprayer body has central dispersion hole at the center, using the center as in the first endless path of circle center
In several first ring dispersion holes of dispersion shape distribution and using the center to divide in the second endless path of circle center in dispersion shape
Several second ring dispersion holes matched, the internal diameter of first endless path are less than the internal diameter of second endless path, second ring
The aperture of dispersion hole is greater than the aperture of the first ring dispersion hole, and the aperture of the first ring dispersion hole is greater than the center dispersion
The aperture in hole, and the central dispersion hole to the first ring dispersion hole is the first line, the center dispersion hole is to described
Second ring dispersion hole is the second line, and second line does not overlap between two neighboring first line and mutually.
2. according to claim 1 for realizing the nozzle for improving nanoscale lithography process performance, which is characterized in that described
Second line divides equally the angle between two neighboring first line.
3. according to claim 1 or 2 for realizing the nozzle for improving nanoscale lithography process performance, which is characterized in that
The diameter of the spraying area of the spray-type sprayer body is between 80-120mm.
4. according to claim 1 or 2 for realizing the nozzle for improving nanoscale lithography process performance, which is characterized in that
Any hole count of the second ring dispersion hole is all not less than four.
5. according to claim 1 or 2 for realizing the nozzle for improving nanoscale lithography process performance, which is characterized in that
The diameter of the center dispersion hole is 0.4-0.8mm, and the diameter of several first ring dispersion holes is 0.6-1.0mm, several second rings
The diameter 1.2-1.4mm of dispersion hole.
6. according to claim 5 for realizing the nozzle for improving nanoscale lithography process performance, which is characterized in that described
First endless path diameter is 38-42mm, the second endless path diameter big 26-34mm of the first endless path diameter.
7. according to claim 1 for realizing the nozzle for improving nanoscale lithography process performance, which is characterized in that also wrap
Include using the center as in the third endless path of circle center be in dispersion shape distribution several third ring dispersion holes；Several thirds
Ring dispersion hole is correspondingly arranged with several first ring dispersion holes.
8. according to claim 7 for realizing the nozzle for improving nanoscale lithography process performance, which is characterized in that described
The big 23-42mm of diameter where third endless path diameter second endless path.
9. according to claim 1 for realizing the nozzle for improving nanoscale lithography process performance, which is characterized in that described
Supply pipe includes the first supply pipe and the second supply pipe, first supply pipe and the central dispersion hole, described several second
The connection of ring dispersion hole, second supply pipe are connected to several first ring dispersion holes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711336244 | 2017-12-14 | ||
| CN2017113362447 | 2017-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208297928U true CN208297928U (en) | 2018-12-28 |
Family
ID=64702574
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810379384.0A Pending CN109960115A (en) | 2017-12-14 | 2018-04-25 | A kind of nozzle for realizing improvement nanoscale lithography process performance |
| CN201820599742.4U Expired - Fee Related CN208297928U (en) | 2017-12-14 | 2018-04-25 | A kind of nozzle for realizing improvement nanoscale lithography process performance |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810379384.0A Pending CN109960115A (en) | 2017-12-14 | 2018-04-25 | A kind of nozzle for realizing improvement nanoscale lithography process performance |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN109960115A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113038723B (en) * | 2021-03-22 | 2022-03-25 | 河南省科学院应用物理研究所有限公司 | Even liquid processing apparatus of printed circuit board |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050066419A (en) * | 2003-12-26 | 2005-06-30 | 동부아남반도체 주식회사 | Apparatus for developing a photoresist pattern |
| KR20080000990A (en) * | 2006-06-28 | 2008-01-03 | 삼성전자주식회사 | Apparatus for treating substrate |
| CN101428256B (en) * | 2007-11-07 | 2011-09-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Nozzle apparatus and semiconductor processing apparatus employing the nozzle apparatus |
| KR101150883B1 (en) * | 2010-10-06 | 2012-05-29 | 주식회사 엘지실트론 | Apparatus for manufacturing a semiconductor device |
| KR101250328B1 (en) * | 2010-11-11 | 2013-04-03 | 주식회사 조이포라이프 | Shower head distributor apparatus and shower head using the same |
| CN202794854U (en) * | 2012-10-11 | 2013-03-13 | 中芯国际集成电路制造(北京)有限公司 | Developing device |
| CN105983493A (en) * | 2015-02-15 | 2016-10-05 | 盛美半导体设备（上海）有限公司 | Subarea-controllable flow regulation nozzle |
-
2018
- 2018-04-25 CN CN201810379384.0A patent/CN109960115A/en active Pending
- 2018-04-25 CN CN201820599742.4U patent/CN208297928U/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN109960115A (en) | 2019-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181228 Termination date: 20190425 |