CN114574862B - Wind-assisted etching device and method for non-equal-depth structure - Google Patents
Wind-assisted etching device and method for non-equal-depth structure Download PDFInfo
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- CN114574862B CN114574862B CN202210210319.1A CN202210210319A CN114574862B CN 114574862 B CN114574862 B CN 114574862B CN 202210210319 A CN202210210319 A CN 202210210319A CN 114574862 B CN114574862 B CN 114574862B
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- 238000005530 etching Methods 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims description 18
- 230000007246 mechanism Effects 0.000 claims abstract description 70
- 238000007664 blowing Methods 0.000 claims abstract description 65
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 238000001802 infusion Methods 0.000 claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- 239000007921 spray Substances 0.000 claims abstract description 10
- 238000003672 processing method Methods 0.000 claims abstract description 9
- 238000005507 spraying Methods 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000007704 transition Effects 0.000 abstract description 2
- 239000002184 metal Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of etching processing, in particular to a wind-assisted etching processing device and a processing method for a non-equal-depth structure, wherein the processing device comprises a transmission mechanism, an infusion mechanism and a blowing mechanism, the transmission mechanism is used for transmitting a workpiece, the infusion mechanism comprises a limiting plate, an infusion piece and a plurality of spray heads arranged on the infusion piece in an array manner, the limiting plate is used for covering the top of the workpiece, the limiting plate is provided with a plurality of limiting grooves, the position of the workpiece with etching is exposed below the spray heads through the limiting grooves, and the spray heads are used for spraying etching liquid to the limiting grooves; the blowing mechanism is used for blowing the etching liquid in the limiting groove so that the etching liquid can etch and form a micro-groove structure with unequal depth on the workpiece. According to the invention, the blowing mechanism is arranged, so that the etching liquid is regionally distributed under the assistance of airflow, and the etching is uniform; the transition of the etching depth is more gradual, and the processing efficiency is high; meanwhile, the flow state of the side wall etching liquid can be controlled, and a controllable morphology structure is generated.
Description
Technical Field
The invention relates to the technical field of etching processing, in particular to a wind-assisted non-equal-depth structure etching processing device and a processing method.
Background
Metal etching processing, namely photochemical metal etching, is to remove metal materials through etching liquid to achieve the processing and forming of a structure, parameters such as etching time, temperature and the like can be simply controlled to control the production efficiency, the structural size precision and the like, the method has the advantages of simple process flow, high processing speed, low cost and the like, and is widely applied to the manufacturing processes of products such as metal patterning processing, PCB circuit boards, flexible folding screen mobile phone structural parts and the like, and the metal etching becomes an indispensable technology.
Micro-structural metal products such as micro-fluidic chips, phase change element capillary structures, mechanical structures and the like often put forward new requirements on structural depth change, but etching processing methods at the present stage mostly guarantee the consistent uniformity of the etching depth, the structural requirements of special products are difficult to meet, the etching processing means of different depths and continuous structures at the present stage are limited, and the etching processing methods of non-equal-depth micro-structures are urgently needed to be developed.
Disclosure of Invention
The invention provides a wind-assisted etching device and a processing method for an unequal-depth structure, aiming at solving the problems in the prior art, and the device and the processing method can accurately process the unequal-depth structure.
In order to solve the technical problem, the invention adopts the following technical scheme:
the invention provides a wind-assisted etching device for a non-equal-depth structure, which comprises a transmission mechanism, an infusion mechanism and a blowing mechanism, wherein the transmission mechanism is used for transmitting a workpiece, the infusion mechanism comprises a limiting plate, an infusion part and a plurality of spray heads arranged on the infusion part in an array manner, the limiting plate is used for covering the top of the workpiece, the limiting plate is provided with a plurality of limiting grooves, the position of the workpiece with etching is exposed below the spray heads through the limiting grooves, and the spray heads are used for spraying etching liquid to the limiting grooves; the blowing mechanism is used for blowing the etching liquid in the limiting groove so that the etching liquid can etch and form a micro-groove structure with unequal depth on the workpiece.
Furthermore, the included angle between the blowing direction of the blowing mechanism and the transmission mechanism is 5-50 degrees.
Furthermore, the blowing mechanism comprises a blowing seat, and the blowing seat is provided with a plurality of air outlet grooves side by side.
Furthermore, the blowing mechanism further comprises a plurality of air outlet nozzles, the air outlet nozzles are distributed in the blowing seat in a rectangular array mode, the air outlet nozzles correspond to the air outlet grooves, and the air outlet nozzles are used for being externally connected with an inert gas source and blowing the workpiece through the air outlet grooves.
Furthermore, each air outlet nozzle is connected with a control valve respectively, and the control valves are used for controlling the opening and closing of the air outlet nozzles.
The invention also provides a wind-assisted etching processing method of the non-equal-depth structure, which comprises the following steps:
A. protecting the non-etching position of the upper surface of the workpiece;
B. the workpiece is conveyed to the position right below the infusion mechanism by using the conveying mechanism;
C. covering the upper surface of the workpiece by using a limiting plate, and inputting etching liquid into a limiting groove of the limiting plate by using a liquid conveying mechanism;
D. and blowing the etching solution in the limiting groove by using a blowing mechanism so as to change the position and the posture of the etching solution.
Further, in step a, the method specifically includes:
A1. coating a photosensitive material on a non-etching position on the surface of a workpiece;
A2. the work is subjected to mask exposure development by the film so that the etched positions of the work are exposed.
Further, after the step D, the method further comprises:
E. taking the limiting plate away from the workpiece, and blowing the etching solution on the surface of the workpiece away from the workpiece by using a blowing mechanism;
F. and (4) performing alkali washing, water washing and polishing treatment on the workpiece.
Further, in step D, the gas ejected by the blowing mechanism is an inert gas.
Further, in step D, the blowing mechanism blows air to control the etching solution to flow in the limiting groove, and the flow speed is 0.1-0.8 m/s.
The invention has the beneficial effects that: according to the invention, the blowing mechanism is arranged, so that the etching liquid is regionally distributed under the assistance of airflow, and the etching is uniform; the transition of the etching depth is more gradual, and the processing efficiency is high; meanwhile, the flow state of the side wall etching liquid can be controlled, and a controllable morphology structure is generated.
Drawings
FIG. 1 is a schematic diagram of the present invention.
Fig. 2 is a schematic view of an infusion set in accordance with the invention.
Fig. 3 is a schematic view of a blowing mechanism of the present invention with a partial cross-section.
Fig. 4 is a schematic view of a limiting plate of the invention.
FIG. 5 is a schematic view of various non-equal depth grooves of the present invention.
Reference numerals: the device comprises a transmission mechanism, a transfusion mechanism, a blowing mechanism, a metal plate, a limiting plate, a transfusion part, a nozzle, a blowing seat, an air outlet nozzle, a limiting groove and an air outlet groove, wherein the transmission mechanism is 1, the transfusion mechanism is 2, the blowing mechanism is 3, the metal plate is 6, the limiting plate is 21, the transfusion part is 22, the nozzle is 23, the blowing seat is 31, the air outlet nozzle is 32, the limiting groove is 211, and the air outlet groove is 311.
Detailed Description
In order to facilitate understanding of those skilled in the art, the present invention will be further described with reference to the following examples and drawings, which are not intended to limit the present invention. The present invention is described in detail below with reference to the attached drawings.
The invention provides a wind-assisted etching device for a non-equal-depth structure, which comprises a transmission mechanism 1, an infusion mechanism 2 and a blowing mechanism 3, wherein the transmission mechanism 1 is used for transmitting a workpiece, the infusion mechanism 2 comprises a limiting plate 21, an infusion piece 22 and a plurality of nozzles 23 arranged on the infusion piece 22 in an array manner, the limiting plate 21 is used for covering the top of the workpiece, the limiting plate 21 is provided with a plurality of limiting grooves 211, the position of the workpiece with etching is exposed below the nozzles 23 through the limiting grooves 211, and the nozzles 23 are used for spraying etching liquid to the limiting grooves 211; the blowing mechanism 3 is used for blowing the etching solution in the limiting groove 211 so that the etching solution can etch and form a micro-groove structure with unequal depth on the workpiece.
The working steps of the invention are as follows:
A. protecting the non-etching position of the upper surface of the workpiece, specifically, exposing the position of the workpiece surface needing etching to the outside, and covering the non-etching position by a corresponding film or structure;
B. the workpiece is conveyed to the position right below the transfusion mechanism 2 by using the conveying mechanism 1;
C. covering the upper surface of the workpiece by using a limiting plate 21 to expose the position of the workpiece needing etching to the external connection through a limiting groove 211 of the limiting plate 21, and then inputting etching solution into the limiting groove 211 of the limiting plate 21 by a liquid conveying mechanism 2;
D. the etching solution in the limiting groove 211 is blown by the blowing mechanism 3, so that the position and the posture of the etching solution are changed, and the groove with unequal depth is etched on the workpiece.
Specifically, in the step D, the gas sprayed from the blowing mechanism 3 is one or a combination of several inert gases such as nitrogen, argon and the like, so as to ensure that the etching effect is not affected by the reaction with the etching solution in the process of blowing the etching solution.
Specifically, the blowing mechanism 3 blows air to control the etching solution to flow in the limiting groove 211, the flow rate is 0.1-0.8m/s, the specification of the workpiece is millimeter, the etching solution is enabled to flow to a specific position rapidly in a mode of enabling the flow rate of the etching solution to be large, the workpiece is etched in a specific posture, and the shape accuracy of the formed groove is guaranteed.
Specifically, the pressure of the etching solution sprayed by the spray head 23 is 0.1-1psi, so that the sputtering of the etching solution after entering the limiting groove 211 due to overlarge flow rate can be avoided.
It should be noted that the non-equal-depth slots described in this embodiment may be "V" shaped slots, "Ω" shaped slots, slots with one end of the bottom inclined toward the other end as shown in fig. 5, and the slots with corresponding shapes can be etched at one time by blowing air through the blowing mechanism 3, thereby improving flexibility.
In this embodiment, the blowing direction of the blowing mechanism 3 forms an angle of 5-50 ° with the conveying mechanism 1. So that the wind is obliquely blown into the limit groove 211, that is, the position distribution of the etching liquid can be controlled by controlling the wind speed.
In this embodiment, the blowing mechanism 3 includes a blowing base 31, and the blowing base 31 is provided with a plurality of air outlet slots 311 side by side. Specifically, the air outlet slots 311 and the limiting slots 211 can be in one-to-one correspondence, that is, the air blown out from one air outlet slot 311 is inevitably blown into the corresponding limiting slot 211, so that the utilization rate of the air is ensured, and the reliability of controlling the etching solution is ensured.
In this embodiment, the blowing mechanism 3 further includes a plurality of air outlet nozzles 32, the air outlet nozzles 32 are distributed in the blowing seat 31 in a rectangular array manner, the air outlet nozzles 32 are correspondingly arranged with the air outlet slot 311, and the air outlet nozzles 32 are used for externally connecting an inert gas source and blowing the workpiece through the air outlet slot 311. The air is blown through the air outlet nozzles 32 in one air outlet slot 311, so that the wind power is ensured, when one air outlet nozzle 32 fails and leaks air, the air outlet device is still in a usable state, and the stability is improved.
Specifically, each air outlet nozzle 32 is connected with a control valve, and the control valves are used for controlling the opening and closing of the air outlet nozzles 32, so that the worker can work through the air outlet nozzles 32 in the corresponding number and positions in one air outlet slot 311, and the etching solution can be only blown in the direction away from the air blowing mechanism 3 and can be limited to a certain middle position in the limiting slot 211 (namely, the two side air outlet nozzles 32 in the same air outlet slot 311 are opened, and the middle air outlet nozzle 32 is closed), so that more diversified slots can be etched by the etching device.
In this embodiment, infusion piece 22 is that rectangular array distributes has a plurality of mounting holes (not mark in the figure), and a plurality of shower nozzles 23 can be dismantled with a plurality of mounting hole one-to-ones and be connected, through the setting of mounting hole promptly for the change of shower nozzle 23 is more convenient, is favorable to in time changing when certain shower nozzle 23 breaks down and avoids causing the influence to work.
Specifically, the conveying mechanism 1 may be of a conventional structure, such as a belt structure or a roller structure, as long as it can stably convey the metal plate 6.
Specifically, in the method of this embodiment, before etching the workpiece, a pretreatment operation is further performed, specifically:
A1. coating a photosensitive material on a non-etching position on the surface of a workpiece;
A2. the work piece is subjected to mask exposure development through the film to allow the coated photosensitive material to develop a shape, thereby leaving the etched portions of the work piece exposed.
Through the arrangement of the step, the non-etching position is covered by the photosensitive material so as to avoid etching of the non-etching position by the etching solution, thereby ensuring that the forming action can be smoothly carried out.
After the etching forming is finished, the limiting plate 21 can be removed, then the blowing mechanism 3 is used for blowing the etching liquid away from the workpiece, and at the moment, the air pressure of the blowing mechanism 3 can be adjusted to be large so as to ensure that the etching liquid leaves the workpiece in time and avoid the over-etching result caused by a plurality of workpieces; after the etching solution is removed, the workpiece is subjected to post-treatment, which at least comprises the processes of alkali washing, water washing, polishing and the like, so that the etching solution and the photosensitive material on the workpiece are completely removed, and the workpiece is more bright and fresh after post-treatment, thereby facilitating the subsequent process.
Although the present invention has been described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the present invention.
Claims (10)
1. The utility model provides a wind-force is assisted not deep structure etching processingequipment which characterized in that: the device comprises a transmission mechanism, an infusion mechanism and a blowing mechanism, wherein the transmission mechanism is used for transmitting workpieces, the infusion mechanism comprises a limiting plate, an infusion part and a plurality of spray heads arranged on the infusion part in an array mode, the limiting plate is used for covering the top of the workpieces, the limiting plate is provided with a plurality of limiting grooves, the positions of the workpieces with etching are exposed below the spray heads through the limiting grooves, and the spray heads are used for spraying etching liquid to the limiting grooves; the blowing mechanism is used for blowing the etching liquid in the limiting groove so that the etching liquid can etch and form a micro-groove structure with unequal depth on the workpiece.
2. The wind-assisted non-isostatic-structure etching processing device as claimed in claim 1, wherein: the included angle between the blowing direction of the blowing mechanism and the transmission mechanism is 5-50 degrees.
3. The wind-assisted non-isostatic-structure etching processing device as claimed in claim 1, wherein: the blowing mechanism comprises a blowing seat, and the blowing seat is provided with a plurality of air outlet grooves side by side.
4. The wind-assisted non-isostatic-structure etching processing apparatus as claimed in claim 3, wherein: the blowing mechanism further comprises a plurality of air-out nozzles, the air-out nozzles are distributed in the blowing seat in a rectangular array mode, the air-out nozzles are arranged corresponding to the air outlet grooves, and the air-out nozzles are used for being externally connected with an inert gas source and used for blowing the workpiece through the air outlet grooves.
5. The wind-assisted non-isostatic-structure etching processing apparatus as claimed in claim 4, wherein: each air outlet nozzle is connected with a control valve respectively, and the control valves are used for controlling the opening and closing of the air outlet nozzles.
6. A wind-assisted etching processing method of a non-equal-depth structure is characterized in that: the method comprises the following steps:
A. protecting the non-etching position of the upper surface of the workpiece;
B. the workpiece is conveyed to the position right below the infusion mechanism by using the conveying mechanism;
C. covering the upper surface of the workpiece by using a limiting plate, and inputting etching liquid into a limiting groove of the limiting plate by using a liquid conveying mechanism;
D. blowing the etching solution in the limiting groove by using a blowing mechanism so as to change the position and the posture of the etching solution;
the wind-assisted etching processing method for the non-equideep structure is applied to the wind-assisted etching processing device for the non-equideep structure as claimed in any one of claims 1 to 5.
7. The wind-assisted etching process of non-equi-depth structures according to claim 6, wherein: in the step a, the method specifically comprises:
A1. coating a photosensitive material on a non-etching position on the surface of a workpiece;
A2. the work is subjected to mask exposure development by the film so that the etching site of the work is exposed.
8. The wind-assisted etching process of non-equi-depth structures according to claim 6, wherein: after the step D, the method also comprises the following steps:
E. taking the limiting plate away from the workpiece, and blowing the etching solution on the surface of the workpiece away from the workpiece by using a blowing mechanism;
F. and (4) performing alkali washing, water washing and polishing treatment on the workpiece.
9. The wind-assisted etching process of non-equi-depth structures according to claim 6, wherein: in step D, the gas ejected by the blowing mechanism is an inert gas.
10. The wind-assisted etching method for a non-equi-depth structure according to claim 6, wherein: in step D, the blowing mechanism blows air to control the etching solution to flow in the limiting groove, and the flow speed is 0.1-0.8 m/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210210319.1A CN114574862B (en) | 2022-03-03 | 2022-03-03 | Wind-assisted etching device and method for non-equal-depth structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210210319.1A CN114574862B (en) | 2022-03-03 | 2022-03-03 | Wind-assisted etching device and method for non-equal-depth structure |
Publications (2)
| Publication Number | Publication Date |
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| CN114574862A CN114574862A (en) | 2022-06-03 |
| CN114574862B true CN114574862B (en) | 2022-09-02 |
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| CN202210210319.1A Active CN114574862B (en) | 2022-03-03 | 2022-03-03 | Wind-assisted etching device and method for non-equal-depth structure |
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Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000328267A (en) * | 1999-05-25 | 2000-11-28 | Hitachi Chem Co Ltd | Etching device and production of printed circuit board using the device |
| JP3654162B2 (en) * | 2000-09-01 | 2005-06-02 | 凸版印刷株式会社 | Etching apparatus and etching method using the same |
| TW200425327A (en) * | 2003-02-21 | 2004-11-16 | Matsushita Electric Ind Co Ltd | Method and apparatus for liquid etching |
| CN202744626U (en) * | 2012-07-06 | 2013-02-20 | 北大方正集团有限公司 | Etching device |
| CN110429053B (en) * | 2019-08-19 | 2021-03-23 | 江阴江化微电子材料股份有限公司 | Wet etching equipment with movable cover plate and wet etching method |
| CN112530841A (en) * | 2020-11-26 | 2021-03-19 | 上达电子（深圳）股份有限公司 | Etching device of meticulous circuit |
| CN214458338U (en) * | 2021-03-05 | 2021-10-22 | 扬博科技股份有限公司 | Etching device with pre-etching process |
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Address after: Room 101, Building 5, No. 788 Xiecao Road, Xiegang Town, Dongguan City, Guangdong Province, 523000 Patentee after: Dongguan sanuogaode Etching Technology Co.,Ltd. Address before: 523000 Room 101, building 1, No. 22, Jinlang Third Street, Diao Lang, Huangjiang Town, Dongguan City, Guangdong Province Patentee before: Dongguan sanuogaode Etching Technology Co.,Ltd. |
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