CN103794633B - 一种阵列基板及其制作方法、显示装置 - Google Patents
一种阵列基板及其制作方法、显示装置 Download PDFInfo
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- CN103794633B CN103794633B CN201410039802.3A CN201410039802A CN103794633B CN 103794633 B CN103794633 B CN 103794633B CN 201410039802 A CN201410039802 A CN 201410039802A CN 103794633 B CN103794633 B CN 103794633B
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- 239000010409 thin film Substances 0.000 claims abstract description 75
- 239000010408 film Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims description 80
- 238000005530 etching Methods 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 31
- 238000000059 patterning Methods 0.000 claims description 25
- 239000011159 matrix material Substances 0.000 claims description 22
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- 229910052751 metal Inorganic materials 0.000 abstract description 25
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- 238000005516 engineering process Methods 0.000 abstract description 13
- 238000012545 processing Methods 0.000 abstract description 9
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 22
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 18
- 239000000463 material Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000004020 luminiscence type Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
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- 239000004973 liquid crystal related substance Substances 0.000 description 3
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- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
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- 238000005253 cladding Methods 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410039802.3A CN103794633B (zh) | 2014-01-27 | 2014-01-27 | 一种阵列基板及其制作方法、显示装置 |
| US14/420,854 US9484396B2 (en) | 2014-01-27 | 2014-04-16 | Array substrate, method for manufacturing the same, display device and electronic product |
| PCT/CN2014/075495 WO2015109667A1 (fr) | 2014-01-27 | 2014-04-16 | Substrat de réseau et son procédé de fabrication, dispositif d'affichage et produit électronique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410039802.3A CN103794633B (zh) | 2014-01-27 | 2014-01-27 | 一种阵列基板及其制作方法、显示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103794633A CN103794633A (zh) | 2014-05-14 |
| CN103794633B true CN103794633B (zh) | 2016-06-15 |
Family
ID=50670135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410039802.3A Active CN103794633B (zh) | 2014-01-27 | 2014-01-27 | 一种阵列基板及其制作方法、显示装置 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103794633B (fr) |
| WO (1) | WO2015109667A1 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576655B (zh) * | 2014-12-01 | 2017-07-18 | 深圳市华星光电技术有限公司 | 一种coa基板及其制作方法 |
| CN106057825A (zh) * | 2016-08-03 | 2016-10-26 | 深圳市华星光电技术有限公司 | Oled显示装置的阵列基板及其制造方法 |
| CN107121859B (zh) * | 2017-06-07 | 2020-01-03 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制造方法、显示面板 |
| CN109148480B (zh) * | 2018-08-21 | 2021-03-16 | 武汉华星光电半导体显示技术有限公司 | 阵列基板 |
| CN113113462B (zh) * | 2021-04-14 | 2023-08-11 | 武汉京东方光电科技有限公司 | 显示面板及显示装置 |
| CN114335015A (zh) * | 2021-12-28 | 2022-04-12 | Tcl华星光电技术有限公司 | 显示装置及显示装置的制备方法 |
| CN114784024A (zh) * | 2022-05-19 | 2022-07-22 | 广州华星光电半导体显示技术有限公司 | 显示面板及显示面板的制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958339A (zh) * | 2009-07-15 | 2011-01-26 | 三星移动显示器株式会社 | 有机发光显示装置及其制造方法 |
| CN101997025A (zh) * | 2009-08-25 | 2011-03-30 | 三星移动显示器株式会社 | 有机发光二极管显示器及其制造方法 |
| CN102013432A (zh) * | 2009-09-03 | 2011-04-13 | 三星移动显示器株式会社 | 有机发光二极管显示器及其制造方法 |
| CN102466937A (zh) * | 2010-10-29 | 2012-05-23 | 北京京东方光电科技有限公司 | Tft-lcd、驱动器件及其制造方法 |
| CN102884633A (zh) * | 2010-05-13 | 2013-01-16 | 夏普株式会社 | 电路基板和显示装置 |
| CN203707135U (zh) * | 2014-01-27 | 2014-07-09 | 京东方科技集团股份有限公司 | 一种阵列基板及显示装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100603361B1 (ko) * | 2004-08-05 | 2006-07-20 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치 |
| US8647919B2 (en) * | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
| CN102629621B (zh) * | 2012-01-09 | 2015-08-12 | 京东方科技集团股份有限公司 | 一种电路、阵列基板及制作方法、显示器 |
-
2014
- 2014-01-27 CN CN201410039802.3A patent/CN103794633B/zh active Active
- 2014-04-16 WO PCT/CN2014/075495 patent/WO2015109667A1/fr active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958339A (zh) * | 2009-07-15 | 2011-01-26 | 三星移动显示器株式会社 | 有机发光显示装置及其制造方法 |
| CN101997025A (zh) * | 2009-08-25 | 2011-03-30 | 三星移动显示器株式会社 | 有机发光二极管显示器及其制造方法 |
| CN102013432A (zh) * | 2009-09-03 | 2011-04-13 | 三星移动显示器株式会社 | 有机发光二极管显示器及其制造方法 |
| CN102884633A (zh) * | 2010-05-13 | 2013-01-16 | 夏普株式会社 | 电路基板和显示装置 |
| CN102466937A (zh) * | 2010-10-29 | 2012-05-23 | 北京京东方光电科技有限公司 | Tft-lcd、驱动器件及其制造方法 |
| CN203707135U (zh) * | 2014-01-27 | 2014-07-09 | 京东方科技集团股份有限公司 | 一种阵列基板及显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103794633A (zh) | 2014-05-14 |
| WO2015109667A1 (fr) | 2015-07-30 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |