CN103762163A - Method for manufacturing mask used for indium antimonide heat diffusion technology - Google Patents
Method for manufacturing mask used for indium antimonide heat diffusion technology Download PDFInfo
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- CN103762163A CN103762163A CN201410005806.XA CN201410005806A CN103762163A CN 103762163 A CN103762163 A CN 103762163A CN 201410005806 A CN201410005806 A CN 201410005806A CN 103762163 A CN103762163 A CN 103762163A
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- indium antimonide
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000009792 diffusion process Methods 0.000 title claims abstract description 43
- 238000005516 engineering process Methods 0.000 title abstract description 8
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 238000001312 dry etching Methods 0.000 claims abstract description 25
- 238000012545 processing Methods 0.000 claims abstract description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 12
- -1 oxygen ion Chemical class 0.000 claims abstract description 11
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 235000012431 wafers Nutrition 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 12
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 11
- 238000007704 wet chemistry method Methods 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 235000013842 nitrous oxide Nutrition 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 241001012508 Carpiodes cyprinus Species 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000003631 wet chemical etching Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
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Abstract
The invention discloses a method for manufacturing a mask used for an indium antimonide heat diffusion technology. The method includes the steps that firstly, a processed indium antimonide substrate is placed into a PECVD device for mask deposition to obtain a silicon oxide/silicon oxynitride mask; secondly, mask pattern photoetching is carried out on the deposited mask; thirdly, a wafer after mask pattern photoetching is placed into a dry etching device for dry etching, the radio-frequency power of dry eching ranges from 60 W to 200 W, the pressure intensity of a reaction cavity ranges from 5 Pa to 20 Pa, gas for dry etching is trifluoromethane or carbon tetrafluoride, the total gas flow is controlled between 100 sccm to 250 sccm, and the remaining thickness of the mask after dry etching ranges from 300 nm to 800 nm; fourthly, oxygen ion processing is carried out on the mask after dry etching; fifthly, the processed wafer is placed into an etching solution for wet chemical etching, the volume ratio of hydrofluoric acid and ammonium fluoride ranges from 1:20 to 1:30, and then heat diffusion processing is carried out. A mask material manufactured through the method can well adapt to heat diffusion process environment, and can achieve local doping on an indium antimonide surface on the basis of the heat diffusion technology.
Description
Technical field
The present invention relates to material technology field, relate in particular to a kind of mask preparation method for indium antimonide thermal diffusion process.
Background technology
Indium antimonide is a kind of important medium-wave infrared sensitive detection parts material, and through the development of decades, chip structure is by unit, polynary to one dimension alignment and two-dimensional array focal plane array future development.At present, the research of centering wave height resolution indium antimonide infrared focal plane detector has proceeded to the application stage, and the indium antimonide infrared focal plane detector of all size is equipped in various military and civilian systems in a large number.
At present, indium antimonide material is prepared infrared focal plane detector just gradually to high-resolution, small size future development, under the reliability of technology of new device architecture and Geng Gao requires, indium antimonide infrared focal plane device is just progressively from mesa structure to planar structure future development, and this forms for one critical process in focal plane chip with regard to the part of indium antimonide material is doping to.Conventionally, the doping on indium antimonide material adopts Implantation and these two kinds of techniques of thermal diffusion, adopts the photoresist of process exposure imaging as mask in ion implantation technology, realizes local doping; And the mask adulterating for thermal diffusion process part does not also have the preparation technology of comparatively ripe and standard, this makes thermal diffusion process cannot realize part doping on indium antimonide material.
Summary of the invention
In view of above-mentioned analysis, the present invention aims to provide a kind of mask preparation method for indium antimonide thermal diffusion process, in order to solve thermal diffusion process in prior art, cannot realize the problem of adulterating in the part on indium antimonide material.
The present invention is mainly achieved through the following technical solutions:
For a mask preparation method for indium antimonide thermal diffusion process, the method comprises:
Step 1, the indium antimonide substrate of handling well is put into PECVD equipment carry out mask deposit, obtain silica/silicon oxynitride mask;
Step 2, the mask of deposit is carried out to mask pattern photoetching;
Step 3, the wafer after photo etched mask figure is put into dry etching equipment carry out dry etching, the radio-frequency power 60～200W of dry etching, reaction chamber pressure 5～20Pa, dry etching gas is fluoroform CHF
3or carbon tetrafluoride CF
4, total gas couette is controlled at 100～250sccm, and the mask residual thickness after dry etching is 300～800nm;
Step 4, the mask after dry etching is carried out to oxonium ion processing;
Step 5, wafer after treatment is put into according to hydrofluoric acid HF: ammonium fluoride NH
4f volume ratio is to carry out wet chemistry method etching in the etching solution of 1:20～1:30, then carries out thermal diffusion process processing.
Preferably, before step 1, also comprise:
The indium antimonide material of preparing to carry out mask material deposit is cleaned, and use UV ozone degumming equipment under the condition that is heated to 70～100 ℃ to indium antimonide material processed 1～3 hour.
Preferably, 200～350 ℃ of the underlayer temperatures that mask deposit adopts, radio-frequency power 10～60W, reaction chamber pressure 30～80Pa, and laughing gas N during mask deposit
2o/ silane SiH
4volume ratio 40:1～60:1, laughing gas N during silicon oxynitride layer deposit
2o/ ammonia NH
3/ silane SiH
4volume ratio is 40:40:1～60:60:1, overall reaction gas flow is controlled at 100～250sccm, deposition time is calculated according to stress and the speed of the silica of PECVD system deposit and silicon oxynitride film, and the stress of silicon oxide layer and the product of gross thickness are equated with the stress of silicon oxynitride layer and the product of gross thickness.
Preferably, it is 200～300Pa that described oxonium ion is processed the reaction chamber pressure adopting, and oxygen flow is 200～400sccm, and radio-frequency power is 30～60W, and the time is 10～30min.
Preferably, after the step of wet chemistry method etching, thermal diffusion process also comprises before processing:
Use acetone to removing photoresist through secondarily etched wafer.
Preferably, after the step that acetone removes photoresist, thermal diffusion process also comprises before processing:
Use UV ozone degumming equipment under the condition that is heated to 70～100 ℃ to processing of wafers 1～3 hour, then wafer is put into concentration lower than salt acid soak 5～15min of 10%, and uses deionized water rinsing to exceed 10min.
A kind of mask preparation method for indium antimonide thermal diffusion process provided by the invention, by adopting pecvd process, prepare the series of process such as silica/silicon oxynitride film and dry/wet twice etching, can prepare can fine adaptation thermal diffusion process environment mask material, realize the local doping of THE SURFACE OF INDIUM ANTIMONIDE based on thermal diffusion process.
Other features and advantages of the present invention will be set forth in the following description, and part from specification, become apparent, or by implement the present invention understand.Object of the present invention and other advantages can be realized and be obtained by specifically noted structure in write specification, claims and accompanying drawing.
Accompanying drawing explanation
Fig. 1 is the structural representation of the silica/silicon oxynitride compound mask on the indium antimonide substrate of the embodiment of the present invention;
Fig. 2 arranges the effect schematic diagram after photoresist on the mask of the embodiment of the present invention;
Fig. 3 is the effect schematic diagram after the dry etching of the embodiment of the present invention;
Fig. 4 is the effect schematic diagram after the wet etching of the embodiment of the present invention;
Fig. 5 is the I-V performance diagram of the infrared focal plane detector chip prepared of the method based on the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, specifically describe the preferred embodiments of the present invention, wherein, accompanying drawing forms the application's part, and together with embodiments of the present invention for explaining principle of the present invention.For purpose of clarity and simplification, when it may make theme of the present invention smudgy, by illustrating in detail of known function and structure in omission device described herein.
The embodiment of the present invention has designed a kind of mask preparation method for indium antimonide thermal diffusion process, on the basis that indium antimonide material thermal diffusion process environmental quality is analyzed, adopt pecvd process at indium antimonide substrate surface silicon oxide deposition/silicon oxynitride film, as the material of diffusion mask, can under thermal diffusion process condition, keep physics and chemistry stable, can effectively stop doping ion simultaneously; Adopt dry method RIE/ wet chemistry method (wet method) to carry out twice etching to silica/silicon oxynitride film, avoid spreading the figure of mask in etching process and degenerate and the damage to indium antimonide material; In technological process, added oxonium ion to remove photoresist and with UV ozone degumming process, thermal diffusion mask has been prepared and carried out necessary processing, thus the Performance and quality of assurance and raising thermal diffusion mask.The method comprises:
Step 1, the indium antimonide substrate of handling well is put into PECVD equipment carry out mask deposit, obtain silica/silicon oxynitride mask;
This step specifically comprises:
The indium antimonide substrate of handling well is put into PECVD equipment and carry out mask deposit, 200～350 ℃ of the underlayer temperatures that mask deposit adopts, radio-frequency power 10～60W, reaction chamber pressure 30～80Pa, and laughing gas N during mask deposit
2o/ silane SiH
4volume ratio is not less than 40:1～60:1, laughing gas N during silicon oxynitride layer deposit
2o/ ammonia NH
3/ silane SiH
4volume ratio is 40:40:1～60:60:1, overall reaction gas flow is controlled at 100～250sccm, deposition time is calculated according to stress and the speed of the silica of PECVD system deposit and silicon oxynitride film, the stress of silicon oxide layer and the product of gross thickness are equated with the stress of silicon oxynitride layer and the product of gross thickness, thereby obtain silica/silicon oxynitride mask, concrete masking effect is referring to Fig. 1.
In the process of implementation step one in order to obtain better effect, need to remove the impurity on indium antimonide material, concrete, the embodiment of the present invention is cleaned at the indium antimonide material that preparation is carried out to mask material deposit, and use UV ozone degumming equipment under the condition that is heated to 70～100 ℃ to indium antimonide material processed 1～3 hour, thereby remove as much as possible the impurity on indium antimonide material, obtain better masking effect.
The deposit of silica/silicon oxynitride mask, in the embodiment of the present invention, adopt pecvd process to carry out the deposit of mask material, because pecvd process has low temperature, the feature of high compactness, the more important thing is that in addition the multi-layer compound structure silica of pecvd process deposit and silicon oxynitride film have the shearing force that can make between film and substrate and significantly reduce, reduce the deformation of thin film deposition rear film itself and substrate, the secondary deformation producing due to Stress Release after mask etching is diminished, improve the reliability of mask in high temperature thermal diffusion.Silica/silicon oxynitride complex thin film structure of deposit in technique, as Fig. 1.Between every layer of the film of this structure, all there is the shear stress of constraint mutually, after thickness is necessarily adjusted, according to Stoney formula, can make substrate that deformation does not substantially occur after thin film deposition, shearing force between substrate and laminated film also can remain on lower level, thereby make mask, after etching and in thermal diffusion, owing to producing new deformation, cause the possibility that mask comes off to reduce, improve the reliability of mask.Also should follow principle during PECVD deposit mask in addition: deposition temperature is 200～350 ℃, this is that silica/silicon oxynitride film in order to guarantee deposit has enough compactness; Lower radio-frequency power, lower than 60W, object is in order to reduce the damage of plasma to indium antimonide material as far as possible; The chemical constituent of controlling silicon oxy-nitride material, guarantees the dielectric characteristic that it is good.
Step 2, the mask of deposit is carried out to mask pattern photoetching;
Photoresist is set as required on mask, need to carries out the position of thermal diffusion process processing and expose, specifically as shown in Figure 2, in figure, on mask, be distributed with many places photoresist.
Step 3, the wafer after photo etched mask figure is put into dry etching equipment carry out dry etching, the radio-frequency power 60～200W of dry etching, reaction chamber pressure 5～20Pa, dry etching gas is fluoroform CHF
3or carbon tetrafluoride CF
4, total gas couette is controlled at 100～250sccm, and the mask residual thickness after dry etching is 300～800nm, specifically as shown in Figure 3;
Step 4, the mask after dry etching is carried out to oxonium ion processing, it is 200～300Pa that concrete oxonium ion is processed the reaction chamber pressure adopting, and oxygen flow is 200～400sccm, and radio-frequency power is 30～60W, and the time is 10～30min.
Step 5, wafer after treatment is put into according to hydrofluoric acid HF: ammonium fluoride NH
4f volume ratio is to carry out wet chemistry method etching in the etching solution of 1:20～1:30, obtains as shown in Figure 4, then carries out thermal diffusion process processing.
The concrete embodiment of the present invention is after carrying out the step of wet chemistry method etching, and thermal diffusion process also comprises before processing:
Use acetone to removing photoresist through secondarily etched wafer, and then use UV ozone degumming equipment under the condition that is heated to 70～100 ℃ to processing of wafers 1～3 hour, again wafer is put into concentration lower than salt acid soak 5～15min of 10%, and use deionized water rinsing to exceed 10min, these operation complete and the processes of removing photoresist thoroughly.
The etching of the mask of the embodiment of the present invention, the secondarily etched technique based on RIE dry etching and wet chemistry method etching, because single RIE technique is when carrying out etching to the material of THE SURFACE OF INDIUM ANTIMONIDE and near surface, the bombardment effect of its plasma can make the crystal structure of indium antimonide produce damage, produces irreversible result; And single wet-chemical chamber is owing to having isotropic character, cause can producing undercutting phenomenon when the film to thicker carries out etching, mask pattern is degenerated, thereby bring technique risk.In the present invention, first utilize the good directional characteristic of RIE technique, by silica/silicon oxynitride mask etching to remaining 300～800nm; Adopt hydrofluoric acid (HF) solution that remaining mask is thoroughly corroded, the horizontal undercutting of figure is less like this, and broken edge pattern can not occur again, and this process as in Figure 2-4.In so secondarily etched technique, in RIE technique, should adopt fluorine base gas to carry out etching to mask material, and in etching process, radio-frequency power is remained on to 30～80W, avoid the damage of plasma to indium antimonide material, reduce the pressure in reaction chamber simultaneously as far as possible, improve the expulsion efficiency of etching product.The HF solution that wet chemistry method etching adopts should add buffer, reduces the etch rate of solution, improves the controllability of etching, and reduces the time at quarter in wet chemistry method etching as far as possible, to guarantee the integrality of mask pattern.
In addition, in order to improve the reliability of mask and its preparation flow, in mask deposit and etching technics, need to increase necessary process of surface treatment.First, need indium antimonide substrate to carry out UV ozone processing before pecvd process, object is to remove the remaining organic substances such as the substrate surface photoresist that may exist, and improves the adhesiveness of mask; Then be after RIE etching, to substrate, to carry out lower powered oxonium ion processing, object is to remove the polymer that remains in etched area in RIE technique, improves the wettability of surface, etched area to wet-chemical chamber solution; Completing after silica/silicon oxynitride mask secondarily etched, first with acetone, remove photoresist, substrate is being carried out to UV ozone processing, thoroughly remove residual photoresist and the etching product of substrate surface.
Mask pattern by method gained of the present invention and functional can keep physics and chemistry stability, and effectively stop the diffusion of the ion that adulterates under high temperature thermal diffusion environment, can be as the thermal diffusion process mask using on indium antimonide material.
Fig. 5 is the I-V performance diagram of the infrared focal plane detector chip prepared of the method based on the embodiment of the present invention, as shown in Figure 5, sample has good indium antimonide PN junction I-V characteristic, open circuit voltage 100mV, reverse-biased cut-off characteristics is good, punch-through does not occur during 0～-1V, and without obviously electric leakage, on the tube core of same focal plane, the I-V characteristic curve of different pixels there is good consistency simultaneously.
With a concrete example, the present invention will be described in detail below:
Processing before step 1, mask material deposit: the indium antimonide material of preparing to carry out mask material deposit is cleaned thoroughly, and use UV ozone degumming equipment under the condition that is heated to 70～100 ℃ to indium antimonide material processed 1～3 hour;
Step 2, mask deposit.The indium antimonide substrate of handling well is put into PECVD equipment and carry out the technique deposit of following parameter: 200～300 ℃ of underlayer temperatures, radio-frequency power 10～60W, reaction chamber pressure 30～80Pa; Reacting gas ratio, according to the concrete condition of PECVD system, is calculated laughing gas (N when silicon oxide layer deposit
2o)/silane (SiH
4) volume ratio is not less than 40:1, laughing gas (N during silicon oxynitride layer deposit
2o)/ammonia (NH
3)/silane (SiH
4) volume ratio is not less than 40:40:1, overall reaction gas flow is controlled at 100～250sccm; Deposition time is calculated according to the stress of the silica of PECVD system deposit and silicon oxynitride film and speed concrete condition, should make the stress of silicon oxide layer and the product of gross thickness equate with the stress of silicon oxynitride layer and the product of gross thickness;
Step 3, the wafer of the good silica/silicon oxynitride of deposit mask is carried out to mask pattern photoetching;
Step 4, RIE technique etching: the wafer after photo etched mask figure is put into RIE equipment and carry out etching for the first time, etching technics parameter is: radio-frequency power 60～200W, reaction chamber pressure 5～20Pa, adopts fluoroform (CHF
3) or carbon tetrafluoride (CF
4) mainly as etching gas, total gas couette is controlled at 100～250sccm; Etch period calculates according to mask thicknesses and etch rate, and should make the mask residual thickness after etching is 300～800nm;
Step 5, the wafer after RIE technique etching is carried out to oxonium ion processing, reaction chamber pressure is 200～300Pa, and oxygen flow is 200～400sccm, radio-frequency power 30～60W, time 10～30min;
Step 6, wet chemistry method etching: wafer after treatment is put into according to hydrofluoric acid (HF) ammonium fluoride (NH
4f) volume ratio is not less than in the etching solution that 1:20 proportioning is good, and agitating solution makes etching reaction more even, controls etch period, makes the mask material of etched area just by complete etching.
Step 7, use acetone are to removing photoresist through secondarily etched wafer, re-use UV ozone degumming equipment under the condition that is heated to 70～100 ℃ to processing of wafers 1～3 hour, again wafer is put into concentration lower than salt acid soak 5～15min of 10%, and using deionized water rinsing to exceed 10min, indium antimonide wafer after treatment can pack vitreosil pipe into and carry out thermal diffusion process.
Test result by indium antimonide material infrared detector chip that the present invention is made shows, the mask of this silica/silicon oxynitride film based on PECVD deposit can effectively stop the doping ion in thermal diffusion process, realize the part doping of indium antimonide material in thermal diffusion process, as the technical foundation of the local doping of a kind of plane, for preparation high-resolution, little spacing indium antimonide infrared focal plane detector chip provide more wider technological approaches.
A kind of mask preparation method for indium antimonide thermal diffusion process provided by the invention, by adopting pecvd process, prepare the series of process such as silica/silicon oxynitride film and dry/wet twice etching, can prepare can fine adaptation thermal diffusion process environment mask material, realize the local doping of THE SURFACE OF INDIUM ANTIMONIDE based on thermal diffusion process.
The above; only for preferably embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (6)
1. for a mask preparation method for indium antimonide thermal diffusion process, it is characterized in that, comprising:
Step 1, the indium antimonide substrate of handling well is put into PECVD equipment carry out mask deposit, obtain silica/silicon oxynitride mask;
Step 2, the mask of deposit is carried out to mask pattern photoetching;
Step 3, the wafer after photo etched mask figure is put into dry etching equipment carry out dry etching, the radio-frequency power 60～200W of dry etching, reaction chamber pressure 5～20Pa, dry etching gas is fluoroform CHF
3or carbon tetrafluoride CF
4, total gas couette is controlled at 100～250sccm, and the mask residual thickness after dry etching is 300～800nm;
Step 4, the mask after dry etching is carried out to oxonium ion processing;
Step 5, wafer after treatment is put into according to hydrofluoric acid HF: ammonium fluoride NH
4f volume ratio is to carry out wet chemistry method etching in the etching solution of 1:20～1:30, then carries out thermal diffusion process processing.
2. method according to claim 1, is characterized in that, before step 1, also comprises:
The indium antimonide material of preparing to carry out mask material deposit is cleaned, and use UV ozone degumming equipment under the condition that is heated to 70～100 ℃ to indium antimonide material processed 1～3 hour.
3. method according to claim 1, is characterized in that, 200～350 ℃ of the underlayer temperatures that mask deposit adopts, radio-frequency power 10～60W, reaction chamber pressure 30～80Pa, and laughing gas N during mask deposit
2o/ silane SiH
4volume ratio 40:1～60:1, laughing gas N during silicon oxynitride layer deposit
2o/ ammonia NH
3/ silane SiH
4volume ratio is 40:40:1～60:60:1, overall reaction gas flow is controlled at 100～250sccm, deposition time is calculated according to stress and the speed of the silica of PECVD system deposit and silicon oxynitride film, and the stress of silicon oxide layer and the product of gross thickness are equated with the stress of silicon oxynitride layer and the product of gross thickness.
4. method according to claim 1, is characterized in that, it is 200～300Pa that described oxonium ion is processed the reaction chamber pressure adopting, and oxygen flow is 200～400sccm, and radio-frequency power is 30～60W, and the time is 10～30min.
5. according to the method described in any one in claim 1-4, it is characterized in that, after the step of wet chemistry method etching, thermal diffusion process also comprises before processing:
Use acetone to removing photoresist through secondarily etched wafer.
6. method according to claim 5, is characterized in that, after the step that acetone removes photoresist, thermal diffusion process also comprises before processing:
Use UV ozone degumming equipment under the condition that is heated to 70～100 ℃ to processing of wafers 1～3 hour, then wafer is put into concentration lower than salt acid soak 5～15min of 10%, and uses deionized water rinsing to exceed 10min.
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