JPS5629379A - Manufacture of infrared ray detector of indium antimony - Google Patents
Manufacture of infrared ray detector of indium antimonyInfo
- Publication number
- JPS5629379A JPS5629379A JP10498379A JP10498379A JPS5629379A JP S5629379 A JPS5629379 A JP S5629379A JP 10498379 A JP10498379 A JP 10498379A JP 10498379 A JP10498379 A JP 10498379A JP S5629379 A JPS5629379 A JP S5629379A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- type
- layer
- infrared ray
- insb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 8
- 239000007791 liquid phase Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Radiation Pyrometers (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain the detector which can pass the infrared ray without fail, by epitaxially growing an N<+> type InSb layer on a P type InSb substrate in a liquid phase, abrading the substrate from the bottom surface in order to make the substrate thin, thereafter selectively forming an N type region reaching the epitaxial layer. CONSTITUTION:An N<+> type InSb layer 22 is epitaxially grown in a liquid phase on a P type InSb substrate 21. The bottom surface of the substrate 21 is mechanically abraded or etched, thereby the thickness of the substrate 21 is reduced to the thickness of serveral mum and the state of a mirror surface is obtained. Then, a protective film 23 having a specified pattern is formed on the mirror surface of the reduced substrate 21. A plurality of N type or N<+> type regions 24 reaching the inside of the substrate 21 are formed by the diffusion, the ion implantation, and the laser irradiation by using the windows provided in the layer 23. Then, the film 23 is removed, and the portion other than the coupling portion where other charge coupled device is directly coupled with the region 24 is covered by an insulating film 25 in order to prevent the generation of leakage currents. In this method, the characteristics of the detectors to be coupled with the charge couped device can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10498379A JPS5629379A (en) | 1979-08-20 | 1979-08-20 | Manufacture of infrared ray detector of indium antimony |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10498379A JPS5629379A (en) | 1979-08-20 | 1979-08-20 | Manufacture of infrared ray detector of indium antimony |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5629379A true JPS5629379A (en) | 1981-03-24 |
Family
ID=14395318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10498379A Pending JPS5629379A (en) | 1979-08-20 | 1979-08-20 | Manufacture of infrared ray detector of indium antimony |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5629379A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05206499A (en) * | 1991-08-08 | 1993-08-13 | Santa Barbara Res Center | Indium antimony photodetector |
| CN103762163A (en) * | 2014-01-07 | 2014-04-30 | 中国电子科技集团公司第十一研究所 | Method for manufacturing mask used for indium antimonide heat diffusion technology |
-
1979
- 1979-08-20 JP JP10498379A patent/JPS5629379A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05206499A (en) * | 1991-08-08 | 1993-08-13 | Santa Barbara Res Center | Indium antimony photodetector |
| CN103762163A (en) * | 2014-01-07 | 2014-04-30 | 中国电子科技集团公司第十一研究所 | Method for manufacturing mask used for indium antimonide heat diffusion technology |
| CN103762163B (en) * | 2014-01-07 | 2016-07-06 | 中国电子科技集团公司第十一研究所 | A kind of mask preparation method for indium antimonide thermal diffusion process |
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