CN1309191A - Deposition process for preparing anti-reflecting film of InSb infrared focus plane array device and its special mask frame - Google Patents
Deposition process for preparing anti-reflecting film of InSb infrared focus plane array device and its special mask frame Download PDFInfo
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- CN1309191A CN1309191A CN 00127818 CN00127818A CN1309191A CN 1309191 A CN1309191 A CN 1309191A CN 00127818 CN00127818 CN 00127818 CN 00127818 A CN00127818 A CN 00127818A CN 1309191 A CN1309191 A CN 1309191A
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Abstract
A low-temp deposition method for the anti-reflecting film of infrared focal-plane InSb array device features 100-105 deg.C of deposition temp, flow of 5.8-6.2 sccm for SiH4 and 88-95 sccm for N2O, the cavity pressure of 600-610, and the deposition time of 80 min. The InSb chip has the reflectivity reduced by 8-19%, in 3.7-4.8 micron band. A special mask holder is used to protect the CMOS reading circuit by preventing the root of leading line from being deposited by silicon oxide.
Description
The present invention relates to infrared focal plane array image device manufacture method.Be specifically related to the method and the special mask frame thereof of silicon oxide deposition antireflective coating on the indium post hybrid-type InSb infrared focal plane array device plane of illumination.
Infrared focal plane array device is not only to have had the imaging sensor that infrared information obtained but also had the advanced person of the information processing function, has important in military, civilian fields such as earth observation from space, photoelectronic warfare, robot vision, Search/Track, medical and industrial thermal imaging and guided missile precise guidances and uses widely.
One of Specifeca tion speeification of infrared focal plane array device is its pixel quantum yield η.The pixel quantum yield of an infrared focal plane array device is that each incides the signal charge current carrier number that photon produced on the pixel plane of illumination, and this number is less than 1 usually.For the device of this class of InSb infrared focal plane array device from back side illuminaton, the pixel quantum yield can be expressed as
η=η
0η
c, η in (1) formula
0Be the optical efficiency of device, η
cP-n junction charge collection efficiency for device.And η
0With InSb surface albedo R, the depth location W of optical absorption coefficient a and p-n junction
nRelevant:
η
0=(1-R)/(1-Re
-aWn)。(2)
If the reflectivity on InSb surface can reduce, then the optical efficiency of InSb infrared focal plane array device is improved, thereby the responsiveness of InSb infrared focal plane array device and detectivity all are improved.Preparation one deck antireflective coating on the plane of illumination of InSb infrared focal plane array device can reach and reduce R, improves the optical efficiency of plane of illumination, thereby improves the effect of responsiveness.
The method for preparing one deck antireflective coating on the InSb detector, by U.S. Pat-5262633A93 November 16, topic: Wideband anti-reflection coating for indium antimonidephotodetector device is open.This method be on the passivation layer of InSb detector successively deposit 4 layer thicknesses respectively be 1/4 preset wavelength, the deielectric-coating that specific refractory power falls progressively has obtained the wide spectrum antireflection characteristic in 0.4-5.5 mum wavelength scope.But this method is not suitable for the technical qualification of preparation antireflective coating on the InSb infrared focal plane array device.Because said here InSb infrared focal plane array device has the structure and the characteristics of a kind of complexity as Fig. 1 represents briefly.It is to be formed by thousands of indium pole interconnections by InSb detector array chip and silicon CMOS sensing circuit.The InSb detector array chip has been thinned to the thickness of 10-20 μ m with grinding and polishing method, thereby the very frangible that becomes, and makes to make very difficulty of any further operation thereon.Said indium colonnade battle array can softened more than 120 ℃, then can melt more than 156 ℃, thereby whole focal plane structure is destroyed, thereby any technology that on the InSb infrared focal plane array device, prepares antireflective coating, must carry out in the temperature below 120 ℃.In addition, the silicon CMOS sensing circuit on the said here InSb infrared focal plane array device has 17 terminal pins tightly to be protected, and avoids being subjected in the antireflective coating process of growth covering of any insulant.At last, the particular job wave band that is used for the InSb infrared focal plane array device of air-to-air missile staring imaging guidance is 3.7-4.8 μ m, therefore, must seek a kind ofly have the membrane preparation method of effective antireflection characteristic at specific band.
The purpose of this invention is to provide a kind of indium post hybrid-type InSb infrared focal plane array device antireflective coating low temperature deposition method, this method can not make the focal plane device structure be destroyed, and has the most effective antireflection characteristic at specific service band 3.7-4.8 μ m.In addition, it is a kind of when the deposit antireflective coating that the present invention also provides, a kind of special-purpose metal mask frame that is protected and designs for the terminal pin of the sensing circuit that makes device.
The objective of the invention is to finish by following technical solution: utilize the appointed condition on the semiconductor device technology line, focal plane device is made clean, then device is put into special-purpose mask frame, with finish the work the most effective antireflective coating of wave band 3.7-4.8 μ m of light assistant chemical vapour phase low temperature deposition method.
Earlier that description of drawings is as follows for sake of convenience:
The simple structural representation of Fig. 1 indium post hybrid-type InSb infrared focal plane array device;
Fig. 2 indium post hybrid-type InSb infrared focal plane array device special mask frame structural representation;
Fig. 3 indium post hybrid-type InSb infrared focal plane array device characteristics of antireflecting film graphic representation.
Antireflective coating low temperature deposition concrete steps are as follows:
1. the clean of device:
The InSb focal plane array device that attenuate is good was put into hot trieline dipping 5 minutes, three times;
Dipping is 24 hours in the trieline;
Acetone is crossed and is washed 5 minutes, three times;
Methyl alcohol is crossed and is washed 5 minutes, three times;
Dry in the dry nitrogen atmosphere.
2. the clean of special-purpose metal mask frame:
Trichlorine potassium alkane ultrasonic (1KHz) cleaned 2 minutes;
Ether ultrasonic (1KHz) cleaned 1 minute;
Acetone ultrasonic (1KHz) cleaned 1 minute;
Alcohol ultrasonic (1KHz) cleaned 1 minute.
3. low temperature deposition antireflective coating:
The metal mask frame that device is housed is put into light assistant chemical CVD apparatus for formation of large-area function deposited film, device heats is arrived 100-105 ℃, and kept 4 hours, make device obtain sufficient preheating.
Then, set the SiH of light assistant chemical CVD apparatus for formation of large-area function deposited film
4Flow is a per minute 5.8-6.2 standard cubic centimeter (sccm); N
2The O flow is a per minute 88-95 standard cubic centimeter (sccm); The chamber pressure of light assistant chemical CVD apparatus for formation of large-area function deposited film is 600-610m τ; Under above-mentioned processing parameter, open ultraviolet source and carry out the deposit of antireflective coating, deposition temperature 100-105 ℃, deposition time continuity 80 minutes.
Above-mentioned condition: 100-105 ℃, SiH
45.8-6.2sccm, N
2O 88-95sccm, 600-610m τ, 80min are one group of optimized parameters that obtains through a large amount of experiments.The decline that can cause quality of reflection reduction film that departs to above-mentioned processing condition for example causes membranous short texture, the be full of cracks on film surface, and film thickness inhomogeneous etc., thus cause the loss of antireflective coating effect.
Said special-purpose metal mask frame 2 is by the end basket 2-4 with a plurality of acupuncture points, and the acupuncture point is built-in with the device 1 of preparing deposit antireflective coating 1-1, is stamped on the end basket and the corresponding loam cake 2-2 with holes in basket acupuncture point, the end.The plane of illumination size of the size in hole and device chip 1-2 is the same, so that plane of illumination can the deposit antireflective coating, and the terminal pin 1-4 of device chip by the sensing circuit 1-5 of indium post 1-3 connection is protected.End basket and loam cake are to be fixed with pin 2-5 and nut 2-1 by three uniform on circumferential edge circular holes, and make the relative position deviation≤0.05mm in acupuncture point and hole, and its precision is guaranteed by 3 pins.See Fig. 2.
Said smooth assistant chemical CVD apparatus for formation of large-area function deposited film is to be produced by U.S. Tystar company, and model is PVD-1000.
The present invention has following beneficial effect:
1. the present invention is specially adapted to blend together one by InSb infrared eye array chip and silicon CMOS sensing circuit by the indium pole interconnection, wherein InSb infrared eye array chip through its thickness after the reduction processing at the 10-20 mu m range, after the reduction processing as the surface of plane of illumination on the deposit antireflective coating:
Therefore 2. because the present invention adopts the low temperature deposition antireflective coating, guaranteed the excellent of indium colonnade battle array on the focal plane device:
3. owing to adopted metal mask frame as shown in Figure 2, cover 17 terminal pins on the silicon CMOS sensing circuit in the focal plane device, avoided the deposit of silicon oxide film on the terminal pin position.
4. because the present invention has adopted optimized parameters, antireflective coating has the most effective antireflection characteristic at 3.7-4.8 μ m, makes the InSb infrared focal plane array device successfully be used for the guidance of air-to-air missile staring imaging.
Embodiment:
The application example that inventor's special recommendation is following, operation steps is identical with aforesaid method,
Device temperature SiH warm up time
4Flow N
2O flow chamber pressure deposition time
100 ℃ of 4 hours 6sccm 90sccm 600m τ 80min
Successfully on a kind of plane of illumination of 64 * 64 yuan of InSb infrared focal plane array devices that are used for air-to-air missile infrared imaging guidance target seeker deposit antireflective coating, make this device improve 30% in the responsiveness of its service band 3.7-4.8 mu m range.
The specific refractory power of the silicon oxide film of institute's deposit is 1.51 ± 0.01 after tested, and thickness is 0.83 ± 0.01 μ m.Reflectivity is reduced to a mnm. 8% at 4.35 μ m places, reduces to 8-19% at 3.7-4.8 μ m service band, sees Fig. 3.Thereby make the InSb sample increase by 30% in 3.7-4.8 mu m waveband scope, further, make the responsiveness of InSb focal plane array device improve 30% the specific absorption of 500K blackbody radiation.
Claims (2)
1. InSb infrared focal plane array device antireflective coating low temperature deposition method is characterized in that concrete steps are:
1.1 the clean of device:
The InSb focal plane array device that attenuate is good was put into hot trieline dipping 5 minutes, three times;
Dipping is 24 hours in the trieline;
Acetone is crossed and is washed 5 minutes, three times;
Methyl alcohol is crossed and is washed 5 minutes, three times;
Dry in the dry nitrogen atmosphere,
1.2 the clean of special-purpose metal mask frame:
The ultrasonic 1KHz of trichlorine potassium alkane cleaned 2 minutes;
The ultrasonic 1KHz of ether cleaned 1 minute;
The ultrasonic 1KHz of acetone cleaned 1 minute;
The ultrasonic 1KHz of alcohol cleaned 1 minute,
1.3 low temperature deposition antireflective coating:
A., the metal mask frame that device will be housed is put into light assistant chemical CVD apparatus for formation of large-area function deposited film, device heats is arrived 100-105 ℃, and kept 4 hours;
B. set the SiH of light assistant chemical CVD apparatus for formation of large-area function deposited film
4Flow is a per minute 5.8-6.2 standard cubic centimeter;
C.N
2The O flow is a per minute 88-95 standard cubic centimeter;
D. the chamber pressure of light assistant chemical CVD apparatus for formation of large-area function deposited film is 600-610m τ;
E. under above-mentioned processing parameter, open ultraviolet source and carry out the deposit of antireflective coating, deposition temperature is 100-105 ℃, deposition time continuity 80 minutes.
2. according to the special-purpose metal mask frame of claim 1 InSb infrared focal plane array device antireflective coating low temperature deposition method, it is characterized in that:
Said metal mask frame (2) is by the end basket (2-4) with a plurality of acupuncture points, and the acupuncture point is built-in with the device (1) of preparing deposit antireflective coating (1-1), is stamped on the end basket with the corresponding loam cake (2-2) with holes in basket acupuncture point, the end and forms; The size in hole is the same with the plane of illumination size that device chip (1-2) is gone up preparation deposit antireflective coating; End basket and loam cake are to be fixed with pin (2-3) and nut (2-1) by three uniform on circumferential edge circular holes, and make the relative position deviation≤0.05mm in acupuncture point and hole, and its precision is guaranteed by 3 pins.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 00127818 CN1112462C (en) | 2000-12-07 | 2000-12-07 | Deposition process for preparing anti-reflecting film of InSb infrared focus plane array device and its special mask frame |
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| CN 00127818 CN1112462C (en) | 2000-12-07 | 2000-12-07 | Deposition process for preparing anti-reflecting film of InSb infrared focus plane array device and its special mask frame |
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| CN1112462C CN1112462C (en) | 2003-06-25 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100447583C (en) * | 2007-03-30 | 2008-12-31 | 厦门大学 | Double-layer anti-reflection film for ultraviolet detector and its preparation method |
| CN100452350C (en) * | 2006-03-31 | 2009-01-14 | 中国科学院微电子研究所 | Manufacturing method of uncooled infrared focal plane array based on silicon substrate without sacrificial layer |
| CN103762163A (en) * | 2014-01-07 | 2014-04-30 | 中国电子科技集团公司第十一研究所 | Method for manufacturing mask used for indium antimonide heat diffusion technology |
| CN106207744A (en) * | 2016-08-24 | 2016-12-07 | 陜西源杰半导体技术有限公司 | The novel anti-reflection film of infrared semiconductor laser chip and coating process thereof |
-
2000
- 2000-12-07 CN CN 00127818 patent/CN1112462C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100452350C (en) * | 2006-03-31 | 2009-01-14 | 中国科学院微电子研究所 | Manufacturing method of uncooled infrared focal plane array based on silicon substrate without sacrificial layer |
| CN100447583C (en) * | 2007-03-30 | 2008-12-31 | 厦门大学 | Double-layer anti-reflection film for ultraviolet detector and its preparation method |
| CN103762163A (en) * | 2014-01-07 | 2014-04-30 | 中国电子科技集团公司第十一研究所 | Method for manufacturing mask used for indium antimonide heat diffusion technology |
| CN103762163B (en) * | 2014-01-07 | 2016-07-06 | 中国电子科技集团公司第十一研究所 | A kind of mask preparation method for indium antimonide thermal diffusion process |
| CN106207744A (en) * | 2016-08-24 | 2016-12-07 | 陜西源杰半导体技术有限公司 | The novel anti-reflection film of infrared semiconductor laser chip and coating process thereof |
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| Publication number | Publication date |
|---|---|
| CN1112462C (en) | 2003-06-25 |
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