CN106207744A - The novel anti-reflection film of infrared semiconductor laser chip and coating process thereof - Google Patents
The novel anti-reflection film of infrared semiconductor laser chip and coating process thereof Download PDFInfo
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- CN106207744A CN106207744A CN201610718099.8A CN201610718099A CN106207744A CN 106207744 A CN106207744 A CN 106207744A CN 201610718099 A CN201610718099 A CN 201610718099A CN 106207744 A CN106207744 A CN 106207744A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0285—Coatings with a controllable reflectivity
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
- C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
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Abstract
The invention discloses novel anti-reflection film and the coating process thereof of infrared semiconductor laser chip, including the some tunic layers being plated on semiconductor laser bar bar (InP), wherein, odd number film layer is Ta2O5Or SiO2Film layer；Even numbers film layer is SiO2Or Ta2O5Film layer, and odd number film layer and even numbers film layer be the film layer that material is different, the novel anti-reflection film of the infrared semiconductor laser chip of the present invention, utilizes the Ta that chemical characteristic is stable2O5And SiO2Realize the plated film of semiconductor laser anti-reflective film layer, realize splendid anti-reflection film characteristic, because Coating Materials selected by the present invention is respectively provided with stable chemical property in coating process, ensure that the plating rate of plated film is stable and optical index stable, make plated film result consistent with Design Theory, and then improving product reliability.
Description
Technical field
The invention belongs to anti-reflective film technical field in semiconductor laser, be specifically related to infrared semiconductor laser chip
Novel anti-reflection film and coating process.
Background technology
Plate last layer or multilayer dielectric matter thin film on the end face of edge-emitting semiconductor laser, can completely cut off quasiconductor with
Oxygen contact in air, it is to avoid oxidation causes reliability issues, additionally changes refractive index by end face coating, can improve quasiconductor
The characteristic of laser instrument, reduces threshold current and improves output.
Currently used sapphire single-crystal powder (Al2O3) and monocrystal silicon (Si) monocrystal material, in plated film uses, its folding
Rate of penetrating is highly unstable, causes film side reflectance unstable, in coating process, due to the instability of chemical characteristic, Al2O3Can lose
Fall part oxygen composition, become Al2Ox, x < 3；Si has oxidation in plated film and occurs, and becomes SiOx；After material changes, chip
On the reflectance of multi-layer anti-reflective film that plates deviation, result can be had to cause product attribute unstable, time serious with Design Theory
Product reliability can be affected.
Summary of the invention
For existing technological deficiency, the invention provides the novel anti-reflection film of a kind of infrared semiconductor laser chip
And coating process, utilize the Ta that chemical characteristic is stable2O5And SiO2Realize the plated film of semiconductor laser anti-reflective film layer, real
Existing splendid anti-reflection film characteristic.
To achieve these goals, the technical solution used in the present invention is: the novel of infrared semiconductor laser chip resists
Reflectance coating, including the some tunic layers being plated on semiconductor laser bar bar (InP), wherein, odd number film layer is Ta2O5Or SiO2
Film layer；Even numbers film layer is SiO2Or Ta2O5Film layer, and odd number film layer and even numbers film layer be the film layer that material is different.
Described Ta2O5Thicknesses of layers is 80nm～150nm, SiO2Thicknesses of layers is 50nm～110nm.
The coating process of the novel anti-reflection film of infrared semiconductor laser chip, comprises the following steps,
Step one, is fixed on the semiconductor laser bar bar of cleavage on tool (12), and tool (12) is partly led for fixing
Body laser bar bar, is then fixed on tool (12) on the umbrella stand (11) of electron beam evaporation plating machine, by Coating Materials (17), i.e.
Ta2O5And SiO2It is respectively put in two crucibles (18), by electron beam evaporation plating machine cavity room evacuation, adds with quartz lamp (14) simultaneously
Hot chamber is to temperature 100 DEG C～150 DEG C；
Step 2, by the Coating Materials in electron beam (16) the fritting wherein crucible (18) that electron gun (20) produces
(17), then open shield (15) and the semiconductor laser bar bar being fixed on tool (12) is carried out plated film, plated ground floor
Close shield (15) after film and stop plated film；
Step 3, changes another crucible (18), by electron beam (16) the fritting crucible (18) that electron gun (20) produces
Coating Materials (17), then open shield (15) and the semiconductor laser bar bar being fixed on tool (12) carried out plated film,
Close shield (15) after having plated the second tunic and stop plated film；
Step 4, repetition step 2 is formed with step 3 after being stacked, by multilamellar intersection, the anti-reflective film that film layer group becomes, makes chamber
Room returns to atmospheric pressure, takes out semiconductor machine light device bar bar tool (12), obtains the present invention.
In described step 2 and step 3, monitor coating film thickness by film-thickness monitors (13), when selected Coating Materials
(17) it is Ta2O5Time, film thickness monitoring is 80nm～150nm, when selected Coating Materials (17) is SiO2Time, film thickness monitoring is 50nm
～110nm.
In described step one, tool (12) and monitoring piece are together fixed on the umbrella stand (11) of electron beam evaporation plating machine, prison
Control wafer is for measuring thickness and the reflectance of film layer.
In described step one, pressure is evacuated to 2.0 × 10-5Torr～2.0 × 10-7Torr。
Compared with prior art, the novel anti-reflection film of the infrared semiconductor laser chip of the present invention, utilize chemistry special
The Ta that property is stable2O5And SiO2Realize the plated film of semiconductor laser anti-reflective film layer, it is achieved splendid anti-reflection film characteristic；
Ta2O5Thickness is 80nm～150nm, SiO2Thickness is 50nm～110nm, and film layer is total and each thicknesses of layers different, then plated film
After have different reflectance, the luminous reflectance of 0.1% to 90% can be realized by changing the film number of plies and thicknesses of layers.
Compared with prior art, the present invention selects SiO2(silicon dioxide) and Ta2O5(tantalum pentoxide) is as plated film material
Material, SiO2(silicon dioxide) is the lowest refractive index material that in oxide, film is good, refractive index n=1.4468@1310nm, and
It is not easily decomposed, absorbs the least with scattering, have a good transparency at 1000nm to 8000nm, be therefore that system is plated needed for multilayer film
Good low refractive index film, Ta2O5(tantalum pentoxide) is high-index material, is the most all transparent at visible ray to infrared ray,
And it is readily obtained less absorption and scattering, and the sedimentation rate of film is also very fast, is used for and SiO2Low reflection, low absorption are plated in collocation
Multilayer film；When solving use e-beam evaporation (ElectronBeamEvaporation) evaporation in prior art, electron beam
Bombardment Al2O3The more secondary electron of rear generation so that Al2O3Oxygen content is unstable, cause material blackening, plating rate unstable and
The problems such as optical index is unstable, and Si is after beam bombardment heats, the problem that easy splash to crucible is outer and oxidizable, because of
Coating Materials selected by the present invention is respectively provided with stable chemical property in coating process, it is ensured that the plating rate of plated film is stablized and light
Stable refractive index, makes plated film result consistent with Design Theory, and then improving product reliability；
It addition, the film plating process of the present invention, because selecting Coating Materials according to having stable chemical property, Ta2O5As height
Refraction materials, compares other materials with electron gun evaporation the most stable, and it is 1 that bulk density is close to, and SiO2It it is film in oxide
Property good lowest refractive index material, be less susceptible to decompose, material in evaporation process because the radiation of material can the amount of bearing
Height, is affected little by film coating environment, can quickly obtain transparency high, absorb little, and stable refractive index pushes away long-pending density high, and machinery is attached
Put forth effort, hardness and stress high, the film layer of chemical stabilization, save the link being passed through protective atmosphere in coating process, simplify
Technological process.
Further, the present invention also has the advantages that, owing to semiconductor laser bar bar is the least, it is difficult to straight
Connecing measurement checking coating effects, the present invention uses monitoring piece to measure thickness and the reflectance having plated film layer, is confirmed whether to reach work
Skill requirement.
Further, the present invention uses e-beam evaporation to be deposited with, Chamber vacuum degree 2.0 × 10-5Torr～2.0 × 10- 7Torr, in order to guarantee that the film layer cleaning that semiconductor laser end face plates is not polluted by oxygen, carbon and aqueous vapor in air, utilizes
Quartz lamp heats, and increases tack and the consistency of film layer micro structure of film layer.
Accompanying drawing explanation
Fig. 1 is that film layer stack changes schematic diagram；Wherein, A is Ta2O5/SiO2/ InP film layer stack changes schematic diagram, and B is SiO2/Ta2O5/
InP film layer stack changes schematic diagram.
Fig. 2 is to measure Ta2O5/SiO2/ InP reflectance map.
Fig. 3 is to measure SiO2/Ta2O5/ InP reflectance map.
Fig. 4 is electron beam evaporation plating machine schematic diagram.
In accompanying drawing: 11-umbrella stand, 12-tool, 13-film-thickness monitors, 14-quartz lamp, 15-shield, 16-electron beam, 17-
Coating Materials, 18-crucible, 19-Magnet, 20-electron gun.
Detailed description of the invention
With specific embodiment, the present invention is further elaborated below in conjunction with the accompanying drawings.
As it is shown in figure 1, the novel anti-reflection film of infrared semiconductor laser chip, including being plated in semiconductor laser bar
Some tunic layers on bar (InP), wherein, odd number film layer is Ta2O5Or SiO2Film layer；Even numbers film layer is SiO2Or Ta2O5Film layer,
And odd number film layer and even numbers film layer are the film layer that material is different, described Ta2O5Thicknesses of layers is 80nm～150nm, SiO2Film thickness
Degree is 50nm～110nm.
Seeing Fig. 4, the present invention comprises the following steps:
Step one, is fixed on the semiconductor laser bar bar of cleavage on tool 12, and tool 12 is used for fixing quasiconductor and swashs
Light device bar bar, is together fixed on tool 12 and monitoring piece on the umbrella stand 11 of electron beam evaporation plating machine, and monitoring piece is used for measuring film layer
Thickness and reflectance, by Coating Materials 17, i.e. Ta2O5And SiO2It is respectively put in two crucibles 18, by electron beam evaporation plating machine cavity
Room evacuation, pressure is evacuated to 2.0 × 10-5Torr～2.0 × 10-7Torr, heats chamber to temperature 100 with quartz lamp 14 simultaneously
DEG C～150 DEG C；
Step 2, produces electron beam 16 by electron gun 20, electron beam 16 under the effect of Magnet 19, change direction thus
Coating Materials 17 in a fritting wherein crucible 18, then opens the shield 15 semiconductor laser to being fixed on tool 12
Bar bar carries out plated film, and monitors coating film thickness, when selected Coating Materials 17 is Ta by film-thickness monitors 132O5Time, thickness control
It is made as 80nm～150nm, when selected Coating Materials 17 is SiO2Time, film thickness monitoring is 50nm～110nm, after having plated the first tunic
Close shield 15 and stop plated film；
Step 3, changes another crucible 18, by the plated film material in the electron beam 16 fritting crucible 18 that electron gun 20 produces
Material 17, then opens shield 15 and the semiconductor laser bar bar being fixed on tool 12 is carried out plated film, and pass through film thickness monitoring
Device 13 monitors coating film thickness, when selected Coating Materials 17 is Ta2O5Time, film thickness monitoring is 80nm～150nm, when selected plated film material
Material 17 is SiO2Time, film thickness monitoring is 50nm～110nm, closes shield 15 and stop plated film after having plated the second tunic；
Step 4, repetition step 2 is formed with step 3 after being stacked, by multilamellar intersection, the anti-reflective film that film layer group becomes, makes chamber
Room returns to atmospheric pressure, takes out semiconductor machine light device bar bar tool 12 and monitoring piece, obtains the present invention, by using monitoring piece
Carry out reflectance measurement, verify technological effect.
As in figure 2 it is shown, the i.e. first film layer is SiO2Film layer, the second film layer is Ta2O5Reflectance map during film layer, film layer sets
It is calculated as two-layer: ground floor SiO2: plating rate isThickness is 65～100nm；Second layer Ta2O5: plating rate isThick
Degree is 90～200nm, at wavelength 1310nm, and available reflectance 0.15%, it is achieved splendid anti-reflection film characteristic.
As it is shown on figure 3, the i.e. first film layer is Ta2O5Film layer, the second film layer is SiO2Reflectance map during film layer, film layer sets
It is calculated as two-layer: ground floor Ta2O5: plating rate isThickness is 140～200nm；Second layer SiO2: plating rate isThickness is 80
～200nm, at wavelength 1310nm, available reflectance 0.19%, it is achieved splendid anti-reflection film characteristic.
Claims (6)
1. the novel anti-reflection film of infrared semiconductor laser chip, it is characterised in that include being plated in semiconductor laser bar bar
(InP) the some tunic layers on, wherein, odd number film layer is Ta2O5Or SiO2Film layer；Even numbers film layer is SiO2Or Ta2O5Film layer, and
Odd number film layer and even numbers film layer are the film layer that material is different.
The novel anti-reflection film of infrared semiconductor laser chip the most according to claim 1, it is characterised in that described
Ta2O5Thicknesses of layers is 80nm～150nm, SiO2Thicknesses of layers is 50nm～110nm.
3. the coating process of the novel anti-reflection film of infrared semiconductor laser chip, it is characterised in that comprise the following steps,
Step one, is fixed on the semiconductor laser bar bar of cleavage on tool (12), and tool (12) is used for fixing quasiconductor and swashs
Light device bar bar, is then fixed on tool (12) on the umbrella stand (11) of electron beam evaporation plating machine, by Coating Materials (17), i.e. Ta2O5
And SiO2It is respectively put in two crucibles (18), by electron beam evaporation plating machine cavity room evacuation, heats chamber with quartz lamp (14) simultaneously
Room is to temperature 100 DEG C～150 DEG C；
Step 2, by the Coating Materials (17) in electron beam (16) the fritting wherein crucible (18) that electron gun (20) produces,
Then open shield (15) and the semiconductor laser bar bar being fixed on tool (12) is carried out plated film, after having plated the first tunic
Close shield (15) and stop plated film；
Step 3, changes another crucible (18), by the plating in electron beam (16) the fritting crucible (18) that electron gun (20) produces
Membrane material (17), then opens shield (15) and the semiconductor laser bar bar being fixed on tool (12) is carried out plated film, plated
Close shield (15) after second tunic and stop plated film；
Step 4, repetition step 2 is formed with step 3 after being stacked, by multilamellar intersection, the anti-reflective film that film layer group becomes, makes chamber return
To atmospheric pressure, take out semiconductor machine light device bar bar tool (12), obtain the present invention.
The coating process of the novel anti-reflection film of infrared semiconductor laser chip the most according to claim 3, its feature
It is, in described step 2 and step 3, monitors coating film thickness by film-thickness monitors (13), when selected Coating Materials (17) is
Ta2O5Time, film thickness monitoring is 80nm～150nm, when selected Coating Materials (17) is SiO2Time, film thickness monitoring be 50nm～
110nm。
The coating process of the novel anti-reflection film of infrared semiconductor laser chip the most according to claim 3, its feature
It is, in described step one, tool (12) and monitoring piece is together fixed on the umbrella stand (11) of electron beam evaporation plating machine, monitoring piece
For measuring thickness and the reflectance of film layer.
The coating process of the novel anti-reflection film of infrared semiconductor laser chip the most according to claim 3, its feature
Being, in described step one, pressure is evacuated to 2.0 × 10-5Torr～2.0 × 10-7Torr。
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Cited By (3)
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| CN110468378A (en) * | 2019-09-12 | 2019-11-19 | 西安邮电大学 | A kind of preparation method of densification five oxidation two tantalum film |
| CN111106527A (en) * | 2018-10-29 | 2020-05-05 | 潍坊华光光电子有限公司 | Method for improving cavity surface coating quality of semiconductor laser |
| CN112553585A (en) * | 2020-12-04 | 2021-03-26 | 上海米蜂激光科技有限公司 | Polymethyl methacrylate substrate medium antireflection film and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111106527A (en) * | 2018-10-29 | 2020-05-05 | 潍坊华光光电子有限公司 | Method for improving cavity surface coating quality of semiconductor laser |
| CN110468378A (en) * | 2019-09-12 | 2019-11-19 | 西安邮电大学 | A kind of preparation method of densification five oxidation two tantalum film |
| CN112553585A (en) * | 2020-12-04 | 2021-03-26 | 上海米蜂激光科技有限公司 | Polymethyl methacrylate substrate medium antireflection film and preparation method thereof |
| CN112553585B (en) * | 2020-12-04 | 2023-04-07 | 上海米蜂激光科技有限公司 | Polymethyl methacrylate substrate medium antireflection film and preparation method thereof |
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Application publication date: 20161207 |