CN103741223A - Gallium arsenide polycrystal synthesis device - Google Patents
Gallium arsenide polycrystal synthesis device Download PDFInfo
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- CN103741223A CN103741223A CN201310751698.6A CN201310751698A CN103741223A CN 103741223 A CN103741223 A CN 103741223A CN 201310751698 A CN201310751698 A CN 201310751698A CN 103741223 A CN103741223 A CN 103741223A
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- plumbago crucible
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Abstract
The invention provides a gallium arsenide polycrystal liquid seal-free synthesis device. The device comprises a synthesis furnace body and a graphite system positioned in the synthesis furnace body, wherein the graphite system comprises a heat preservation unit, a heating unit and a synthesis unit; the heat preservation unit comprises a graphite heat preservation cover and a graphite heat preservation barrel; the heating unit comprises an electrode, a heater and a peripheral temperature control circuit; the synthesis unit, and the electrode and the heater in the heating unit are positioned in the heat preservation unit, the heater and the electrode in the heating unit are positioned at the peripheral middle and lower part of the synthesis unit; the synthesis unit comprises a graphite crucible cover, a graphite crucible and a boron nitride crucible; and the device is characterized in that the graphite system further comprises a motion unit to enable the synthesis unit to lift and rotate, the motion unit is connected with the synthesis unit and the synthesis furnace body, and step shapes are designed at the connection parts of the graphite crucible and the graphite crucible cover and tally with each other.
Description
Technical field
The present invention relates to a kind of synthesizer of gallium arsenide polycrystal.
Background technology
Along with scientific and technological development and progress, semiconductor material is applied in photoelectric device more and more, such as materials such as gallium arsenide polycrystals, and the material requires such as gallium arsenide polycrystal are synthetic, the synthesis technique of current existing gallium arsenide polycrystal exists numerous defects and inconvenience, and synthetic gallium arsenide polycrystal crystallinity is bad and yield rate is lower.Therefore, find a kind of synthesizer of the gallium arsenide polycrystal of above defect of can avoiding and become at present exigence the most.
Summary of the invention
The invention provides a kind of gallium arsenide polycrystal non-liquid seal apparatus for converting, comprise synthetic body of heater and be positioned at the graphite system that synthesizes body of heater, graphite system comprises heat-insulation unit, heating unit and synthesis unit, heat-insulation unit comprises graphite stay-warm case and graphite insulated tank, heating unit comprises electrode, well heater and peripheral temperature control circuit, synthesis unit, and the electrode in heating unit and well heater are positioned at the inside of heat-insulation unit, well heater in heating unit and electrode are positioned at the peripheral middle and lower part of synthesis unit, synthesis unit comprises plumbago crucible lid, plumbago crucible and boron nitride crucible, it is characterized in that, described graphite system also comprises the moving cell that synthesis unit lifting is rotated, moving cell and synthesis unit, synthetic body of heater is connected, plumbago crucible and plumbago crucible cover at junction design step shape and match, described plumbago crucible covers plated film boron nitride in interior and plumbago crucible, the boron nitride crucible of 3-5 3 inches is evenly set in plumbago crucible, and described heat-insulation unit skin is made by high purity graphite, and internal layer is filled with graphite insulation quilt.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
This gallium arsenide polycrystal non-liquid seal apparatus for converting, comprise synthetic body of heater and be positioned at the graphite system that synthesizes body of heater, graphite system comprises heat-insulation unit, heating unit and synthesis unit, heat-insulation unit comprises graphite stay-warm case and graphite insulated tank, heating unit comprises electrode, well heater and peripheral temperature control circuit, synthesis unit, and the electrode in heating unit and well heater are positioned at the inside of heat-insulation unit, well heater in heating unit and electrode are positioned at the peripheral middle and lower part of synthesis unit, synthesis unit comprises plumbago crucible lid, plumbago crucible and boron nitride crucible, it is characterized in that, described graphite system also comprises the moving cell that synthesis unit lifting is rotated, moving cell and synthesis unit, synthetic body of heater is connected, plumbago crucible and plumbago crucible cover at junction design step shape and match, described plumbago crucible covers plated film boron nitride in interior and plumbago crucible, the boron nitride crucible of 3-5 3 inches is evenly set in plumbago crucible, and described heat-insulation unit skin is made by high purity graphite, and internal layer is filled with graphite insulation quilt.
Claims (1)
1. a gallium arsenide polycrystal non-liquid seal apparatus for converting, comprise synthetic body of heater and be positioned at the graphite system that synthesizes body of heater, graphite system comprises heat-insulation unit, heating unit and synthesis unit, heat-insulation unit comprises graphite stay-warm case and graphite insulated tank, heating unit comprises electrode, well heater and peripheral temperature control circuit, synthesis unit, and the electrode in heating unit and well heater are positioned at the inside of heat-insulation unit, well heater in heating unit and electrode are positioned at the peripheral middle and lower part of synthesis unit, synthesis unit comprises plumbago crucible lid, plumbago crucible and boron nitride crucible, it is characterized in that, described graphite system also comprises the moving cell that synthesis unit lifting is rotated, moving cell and synthesis unit, synthetic body of heater is connected, plumbago crucible and plumbago crucible cover at junction design step shape and match, described plumbago crucible covers plated film boron nitride in interior and plumbago crucible, the boron nitride crucible of 3-5 3 inches is evenly set in plumbago crucible, and described heat-insulation unit skin is made by high purity graphite, and internal layer is filled with graphite insulation quilt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310751698.6A CN103741223A (en) | 2013-12-23 | 2013-12-23 | Gallium arsenide polycrystal synthesis device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310751698.6A CN103741223A (en) | 2013-12-23 | 2013-12-23 | Gallium arsenide polycrystal synthesis device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103741223A true CN103741223A (en) | 2014-04-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310751698.6A Pending CN103741223A (en) | 2013-12-23 | 2013-12-23 | Gallium arsenide polycrystal synthesis device |
Country Status (1)
| Country | Link |
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| CN (1) | CN103741223A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104328499A (en) * | 2014-09-30 | 2015-02-04 | 青岛康和食品有限公司 | Gallium arsenide base polycrystal liquid seal-free synthesis apparatus |
| CN106400101A (en) * | 2016-10-11 | 2017-02-15 | 广东先导先进材料股份有限公司 | Compound semiconductor monocrystal growing device and method |
-
2013
- 2013-12-23 CN CN201310751698.6A patent/CN103741223A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104328499A (en) * | 2014-09-30 | 2015-02-04 | 青岛康和食品有限公司 | Gallium arsenide base polycrystal liquid seal-free synthesis apparatus |
| CN106400101A (en) * | 2016-10-11 | 2017-02-15 | 广东先导先进材料股份有限公司 | Compound semiconductor monocrystal growing device and method |
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| C06 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140423 |
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| WD01 | Invention patent application deemed withdrawn after publication |