CN203295664U - Continuous feeding device used for independently heating double crucibles grown with sapphire crystal dynamic temperature method - Google Patents
Continuous feeding device used for independently heating double crucibles grown with sapphire crystal dynamic temperature method Download PDFInfo
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- CN203295664U CN203295664U CN2013202511483U CN201320251148U CN203295664U CN 203295664 U CN203295664 U CN 203295664U CN 2013202511483 U CN2013202511483 U CN 2013202511483U CN 201320251148 U CN201320251148 U CN 201320251148U CN 203295664 U CN203295664 U CN 203295664U
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Abstract
The utility model discloses a continuous feeding device used for independently heating double crucibles grown with a sapphire crystal dynamic temperature method. The continuous feeding device is characterized by comprising a seed rod (1) located above a melt body (4) in a growth crucible (3) and used for fixedly growing a seed (2), wherein the seed rod (1) is controlled by a lift head of a crystal growth device; the growth crucible (3) is located in a crystal growth heating furnace; a temperature control device of a temperature heating body (5) of the heating furnace is controlled independently; the growth crucible (3) is connected with a melt body (10) below a chemical crucible (11) through a communicating device (6); a high-temperature resistant valve (8) is arranged in the communicating device and can control the flowing condition of a melt body (9) in the communicating device (6); the temperature of a melt body of the communicating device (6) can be regulated by controlling heating power of a heating body (7) outside the communicating device (6); the temperate of the chemical crucible (11) is controlled by the heating power of the heating body (7) located on the outer wall of the chemical crucible; and a solid material (12) above the melt body (10) in the chemical crucible (11) can supplement consumption of the melt body (9) in a crystal growth process. Temperatures of the heating body (5), the heating body (7) and the heating body (9) can be independently controlled, so that the continuous feeding device has the benefit that when the valve (8) is closed, temperatures of the melt bodies in the growth crucible (3) and the chemical crucible (11) can be regulated according to requirements. The growth crucible (3), the chemical crucible (11), the communicating device (6) and the valve (8) are made of high-temperature resistant tungsten; and the heating body (5), the heating body (7) and the heating body (9) are tungsten rods made of the same material. The whole device is in nitrogen protection.
Description
Technical field
The utility model relates to the two crucible continuous feeding devices of a kind of independent heating for the growth of sapphire crystal dynamic temperature method.
Background technology
Large size sapphire crystal has excellent optics and mechanical property, the materialization good stability, intensity is high, hardness is large, can work under 1800 ℃ of high temperature, be the substrate material of LED, large-scale integrated circuit SOI and SOS and superconducting nano structural membrane etc., and can be used for the window material of infrared military installation, Aerospace Satellite and high intensity laser beam.Along with the development of application demand, high request is proposed constantly for crystalline size and quality.But new difficulty appears during larger large size sapphire crystal in growth, is mainly manifested in crystal shouldering process and becomes and be difficult to control, and causes crystal top to be divided of poor quality, sometimes even occurs polycrystalline being grown unsuccessfully by crystal.Its reason is that the crystal cooling effect is outstanding because size in crystal growth strengthens, the crystal shouldering with isodiametric growth to radially thermograde is different.When the crystal shouldering, crystal only has seed crystal heat radiation, and radiating effect is poor, and very little to the contribution of thermograde radially, radial symmetry gradient can only lean on heating and the heat radiation system that system arranges to produce.The isodiametric growth of crystal stage requires growth interface near level, but also will consider the crystal of producing heat radiation, and therefore heating and heat radiation system generation radial symmetry gradient can not be large.When growth small size crystal, crystalline size is little, dispels the heat in process of growth very not outstanding, can take into account by regulation heating and radiator structure the needs of crystal shouldering and isodiametric growth.At growing large-size particularly more than 6 inches during the crystal of size, crystalline size is large, and the corresponding increase of heat radiation, produce and have a strong impact on thermograde radially in process of growth, for guaranteeing carrying out smoothly of isodiametric growth, the radial symmetry gradient that requires heating and heat radiation system to produce is less.Therefore, when the growing large-size sapphire crystal, shouldering and isodiametric growth require different particularly thorny to the system radial symmetry gradient, simultaneously, because crystalline size strengthens, the crucible Raw increases, in melt, the bubble expeling seems very important, otherwise the macroscopic defects generations such as micro-bubble can be arranged in the crystal that growth obtains, seriously reduce the crystal growth quality, need to solve.Proposed a kind ofly at crystal material, shouldering and isodiametric growth, to adopt respectively the dynamic temperature method in its corresponding temperature field to carry out growing sapphire crystal for this reason, this growing method utilizes dynamic temperature field to meet crystal material, shouldering and isodiametric growth process separately to the needs of special procuring in temperature field, is suitable for the crystal growth of large-size sapphire.But, along with the increase of crystal growth raw material, easily deform because melt is overweight when growth crucible is at high temperature when the crucible feed, cause crystal to be grown unsuccessfully.
Summary of the invention
in order to realize the purpose of this utility model, the utility model provides a kind of independent heating for the growth of sapphire crystal dynamic temperature method two crucible continuous feeding devices, it is characterized in that the related device of related device comprises the seed rod (1) of the fixed growth seed crystal (2) that is arranged in growth crucible (3) melt (4) top, seed rod (1) is controlled by the lifting head of crystal growth equipment, growth crucible (3) is arranged in crystal growth process furnace, the temperature control device of process furnace heating element (5) is independently controlled, growth crucible (3) is connected by melt (10) following in communicating vessels (6) and material crucible (11), a resistant to elevated temperatures valve (8) is arranged in communicating vessels, can control the mobility status of the melt (10) in communicating vessels (6), the temperature that can regulate communicating vessels (6) melt by the heating power of controlling the outer heating element (7) of communicating vessels (6), temperature in material crucible (11) is controlled by the heating power of the heating element that is positioned at its outer wall (9), the solid-state material (12) that is arranged in material crucible (11) melt (10) top can supplement at crystal growing process the consumption of melt (10).The temperature that it is characterized in that described process furnace heating element (5), communicating vessels heating element (7) and material heating element (9) can independently be controlled, and the beneficial effect of doing like this is the melt height that can distinguish according to demand when valve-off (8) in growth regulation crucible (3) and material crucible (11).Described growth crucible (3), material crucible (11) and communicating vessels (6) and valve (8) are made by resistant to elevated temperatures tungsten gold.Described heating element (5), (7) and heating element (9) are by identical material tungsten rod processed.Described device integral body is in nitrogen protection.
Benefit of the present utility model is to use two crucible continuous feedings, can reduce the burden of growth crucible, guarantees the success ratio of crystal growth, can reduce the height of growth crucible simultaneously, in the time of than small crystal growth stove size, crystal growing furnace is more easily controlled.
Description of drawings
Accompanying drawing is the two crucible continuous feeding devices of a kind of independent heating for the growth of sapphire crystal dynamic temperature method.
Embodiment
The utility model embodiment can illustrate by following embodiment.
Embodiment: the two crucible continuous feeding devices of independent heating of the dynamic temperature field method growth of Φ 262mm sapphire crystal
The present embodiment tungsten growth crucible used is of a size of Φ 280mm, and growth crucible wall bottom thickness is 10mm, and top thickness is 8mm, and the growth crucible height is 200mm.Material crucible upper dimension is Φ 500mm, and lower dimension is Φ 280mm, and thickness is 8mm, is highly 400mm.Heating element is the tungsten rod of Φ 5mm.The thermal insulation layer that crucible uses outward is metal molybdenum.
Claims (5)
1. one kind is used for the two crucible continuous feeding devices of independent heating that sapphire crystal dynamic temperature method is grown, it is characterized in that related device comprises the seed rod (1) of the fixed growth seed crystal (2) that is arranged in growth crucible (3) melt (4) top, seed rod (1) is controlled by the lifting head of crystal growth equipment, growth crucible (3) is arranged in crystal growth process furnace, the temperature control device of process furnace heating element (5) is independently controlled, growth crucible (3) is connected by melt (10) following in communicating vessels (6) and material crucible (11), a resistant to elevated temperatures valve (8) is arranged in communicating vessels, can control the mobility status of the melt (10) in communicating vessels (6), the temperature that can regulate communicating vessels (6) melt by the heating power of controlling communicating vessels (6) heating element (7), temperature in material crucible (11) is controlled by the heating power of the material heating element (9) that is positioned at its outer wall, the solid-state material (12) that is arranged in material crucible (11) melt (10) top can supplement at crystal growing process the consumption of melt (10).
2. the two crucible continuous feeding devices of a kind of independent heating for the growth of sapphire crystal dynamic temperature method as claimed in claim 1, is characterized in that the temperature of described process furnace heating element (5), communicating vessels heating element (7) and material heating element (9) can independently be controlled.
3. the two crucible continuous feeding devices of a kind of independent heating for the growth of sapphire crystal dynamic temperature method as claimed in claim 1, is characterized in that described growth crucible (3), material crucible (11) and communicating vessels (6) and valve (8) are by the making of resistant to elevated temperatures tungsten gold.
4. the two crucible continuous feeding devices of a kind of independent heating for the growth of sapphire crystal dynamic temperature method as claimed in claim 1, is characterized in that described heating element (5), (6) and heating element (9) are by identical material tungsten rod processed.
5. the two crucible continuous feeding devices of a kind of independent heating for the growth of sapphire crystal dynamic temperature method as claimed in claim 1, is characterized in that described device integral body is in nitrogen protection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013202511483U CN203295664U (en) | 2013-04-09 | 2013-04-09 | Continuous feeding device used for independently heating double crucibles grown with sapphire crystal dynamic temperature method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013202511483U CN203295664U (en) | 2013-04-09 | 2013-04-09 | Continuous feeding device used for independently heating double crucibles grown with sapphire crystal dynamic temperature method |
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| CN203295664U true CN203295664U (en) | 2013-11-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013202511483U Expired - Fee Related CN203295664U (en) | 2013-04-09 | 2013-04-09 | Continuous feeding device used for independently heating double crucibles grown with sapphire crystal dynamic temperature method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111826709A (en) * | 2020-08-21 | 2020-10-27 | 井兵涛 | Czochralski method monocrystalline silicon growth furnace |
| CN112195514A (en) * | 2020-09-17 | 2021-01-08 | 李黎莎 | Large-diameter monocrystalline silicon production equipment |
| CN113373518A (en) * | 2021-07-16 | 2021-09-10 | 济南大学 | Device and method for growing oversized long equal-diameter lithium niobate |
| CN114752997A (en) * | 2022-04-25 | 2022-07-15 | 哈尔滨工业大学 | Double-crucible liquid phase epitaxial growth device |
-
2013
- 2013-04-09 CN CN2013202511483U patent/CN203295664U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111826709A (en) * | 2020-08-21 | 2020-10-27 | 井兵涛 | Czochralski method monocrystalline silicon growth furnace |
| CN112195514A (en) * | 2020-09-17 | 2021-01-08 | 李黎莎 | Large-diameter monocrystalline silicon production equipment |
| CN113373518A (en) * | 2021-07-16 | 2021-09-10 | 济南大学 | Device and method for growing oversized long equal-diameter lithium niobate |
| CN114752997A (en) * | 2022-04-25 | 2022-07-15 | 哈尔滨工业大学 | Double-crucible liquid phase epitaxial growth device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131120 Termination date: 20140409 |