CN103696013A - Gallium arsenide polycrystal liquid-seal-free synthesizer - Google Patents

Gallium arsenide polycrystal liquid-seal-free synthesizer Download PDF

Info

Publication number
CN103696013A
CN103696013A CN201310755720.4A CN201310755720A CN103696013A CN 103696013 A CN103696013 A CN 103696013A CN 201310755720 A CN201310755720 A CN 201310755720A CN 103696013 A CN103696013 A CN 103696013A
Authority
CN
China
Prior art keywords
unit
graphite
heater
gallium arsenide
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310755720.4A
Other languages
Chinese (zh)
Inventor
吴联顺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Yongtong Elevator Engineering Co Ltd
Original Assignee
Qingdao Yongtong Elevator Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qingdao Yongtong Elevator Engineering Co Ltd filed Critical Qingdao Yongtong Elevator Engineering Co Ltd
Priority to CN201310755720.4A priority Critical patent/CN103696013A/en
Publication of CN103696013A publication Critical patent/CN103696013A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention provides a gallium arsenide polycrystal liquid-seal-free synthesizer. The gallium arsenide polycrystal liquid-seal-free synthesizer comprises a synthesizing furnace body and a graphite system positioned in the synthesized furnace body, wherein the graphite system comprises a temperature preservation unit, a heating unit and a synthesizing unit; the temperature preservation unit comprises a graphite temperature preservation cover and a graphite temperature preservation barrel; the heating unit comprises an electrode, a heater and a peripheral temperature control circuit; the synthesizing unit as well as the electrode and the heater in the heating unit are positioned in the temperature preservation unit; the heater and the electrode in the heating unit are positioned on the middle and lower part of the periphery of the synthesizing unit; the synthesizing unit comprises a graphite crucible cover, a graphite crucible and a boron nitride crucible. The gallium arsenide polycrystal liquid-seal-free synthesizer is characterized in that the graphite system also comprises a moving unit for enabling the synthesizing unit to lift and rotate; the moving unit is connected with the synthesizing unit and the synthesizing furnace body; step shapes designed at the joint of the graphite crucible and the graphite crucible cover are fit.

Description

A kind of gallium arsenide polycrystal non-liquid seal apparatus for converting
Technical field
The present invention relates to a kind of synthesizer of gallium arsenide polycrystal, especially relate to a kind of aneroid sealing-in synthesizer of gallium arsenide polycrystal.
Background technology
Along with scientific and technological development and progress, much more more and more semiconductor material is applied in photoelectric device, such as materials such as gallium arsenide polycrystals, and the material requires such as gallium arsenide polycrystal are synthetic, the synthesis technique of current existing gallium arsenide polycrystal exists numerous defects and inconvenience, and synthetic gallium arsenide polycrystal crystallinity is bad and yield rate is lower.Therefore, find a kind of aneroid sealing-in synthesizer of above defect of can avoiding and become at present exigence the most.
Summary of the invention
The invention provides a kind of gallium arsenide polycrystal non-liquid seal apparatus for converting, comprise synthetic body of heater and be positioned at the graphite system that synthesizes body of heater, graphite system comprises heat-insulation unit, heating unit and synthesis unit, heat-insulation unit comprises graphite stay-warm case and graphite insulated tank, heating unit comprises electrode, well heater and peripheral temperature control circuit, synthesis unit, and the electrode in heating unit and well heater are positioned at the inside of heat-insulation unit, well heater in heating unit and electrode are positioned at the peripheral middle and lower part of synthesis unit, synthesis unit comprises plumbago crucible lid, plumbago crucible and boron nitride crucible, it is characterized in that, described graphite system also comprises the moving cell that synthesis unit lifting is rotated, moving cell and synthesis unit, synthetic body of heater is connected, plumbago crucible and plumbago crucible cover at junction design step shape and match.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
This gallium arsenide polycrystal non-liquid seal apparatus for converting, comprise synthetic body of heater and be positioned at the graphite system that synthesizes body of heater, graphite system comprises heat-insulation unit, heating unit and synthesis unit, heat-insulation unit comprises graphite stay-warm case and graphite insulated tank, heating unit comprises electrode, well heater and peripheral temperature control circuit, synthesis unit, and the electrode in heating unit and well heater are positioned at the inside of heat-insulation unit, well heater in heating unit and electrode are positioned at the peripheral middle and lower part of synthesis unit, synthesis unit comprises plumbago crucible lid, plumbago crucible and boron nitride crucible, it is characterized in that, described graphite system also comprises the moving cell that synthesis unit lifting is rotated, moving cell and synthesis unit, synthetic body of heater is connected, plumbago crucible and plumbago crucible cover at junction design step shape and match.

Claims (1)

1. a gallium arsenide polycrystal non-liquid seal apparatus for converting, comprise synthetic body of heater and be positioned at the graphite system that synthesizes body of heater, graphite system comprises heat-insulation unit, heating unit and synthesis unit, heat-insulation unit comprises graphite stay-warm case and graphite insulated tank, heating unit comprises electrode, well heater and peripheral temperature control circuit, synthesis unit, and the electrode in heating unit and well heater are positioned at the inside of heat-insulation unit, well heater in heating unit and electrode are positioned at the peripheral middle and lower part of synthesis unit, synthesis unit comprises plumbago crucible lid, plumbago crucible and boron nitride crucible, it is characterized in that, described graphite system also comprises the moving cell that synthesis unit lifting is rotated, moving cell and synthesis unit, synthetic body of heater is connected, plumbago crucible and plumbago crucible cover at junction design step shape and match.
CN201310755720.4A 2013-12-26 2013-12-26 Gallium arsenide polycrystal liquid-seal-free synthesizer Pending CN103696013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310755720.4A CN103696013A (en) 2013-12-26 2013-12-26 Gallium arsenide polycrystal liquid-seal-free synthesizer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310755720.4A CN103696013A (en) 2013-12-26 2013-12-26 Gallium arsenide polycrystal liquid-seal-free synthesizer

Publications (1)

Publication Number Publication Date
CN103696013A true CN103696013A (en) 2014-04-02

Family

ID=50357670

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310755720.4A Pending CN103696013A (en) 2013-12-26 2013-12-26 Gallium arsenide polycrystal liquid-seal-free synthesizer

Country Status (1)

Country Link
CN (1) CN103696013A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104328499A (en) * 2014-09-30 2015-02-04 青岛康和食品有限公司 Gallium arsenide base polycrystal liquid seal-free synthesis apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104328499A (en) * 2014-09-30 2015-02-04 青岛康和食品有限公司 Gallium arsenide base polycrystal liquid seal-free synthesis apparatus

Similar Documents

Publication Publication Date Title
CN101498047B (en) Gallium arsenide polycrystal non-liquid seal synthesizing method and apparatus
CN104451885A (en) Method and device for growing silicon carbide crystal
CN104451858A (en) Multifunctional crystal growth system for high-pressure in-situ synthesis
CN103696013A (en) Gallium arsenide polycrystal liquid-seal-free synthesizer
CN103421975B (en) The preparation method of copper gallium alloy
CN103741223A (en) Gallium arsenide polycrystal synthesis device
CN104328485A (en) Novel flow guide cylinder capable of improving growth rate of Czochralski silicon monocrystals
CN204237887U (en) Situ high pressure synthesizes multi-functional crystal growth system
CN103741222A (en) Gallium arsenide polycrystalline synthesis device
CN105926039A (en) Method for synthesizing and growing titanium disulfide single crystal at high temperature
CN104695013A (en) Indium phosphide polycrystal synthesis apparatus without liquid encapsulation
CN203295664U (en) Continuous feeding device used for independently heating double crucibles grown with sapphire crystal dynamic temperature method
CN108103577A (en) The synthetic method and synthesizer of a kind of gallium arsenide polycrystal
CN104328499A (en) Gallium arsenide base polycrystal liquid seal-free synthesis apparatus
TW201816202A (en) Heat shield of crystal seed growth crucible and method thereof
CN104876551B (en) Brilliant particle (ZrB in a kind of2/Al2O3) and its preparation facilities and method
CN103993355B (en) CuInS2the preparation method of monocrystal and CuInS2monocrystal preparation facilities
CN202116690U (en) Thermal field system of silicon single crystal furnace
CN207109138U (en) A kind of directional solidification furnace of solar energy polycrystalline silicon
WO2020057095A1 (en) Method for preparing silicon carbide powder by using induction furnace
CN108793945A (en) A kind of electrothermal dark-red pottery boiling pot and preparation method thereof
CN107604440A (en) It is a kind of to suppress method of the quartz container to indium phosphide melt contamination
CN208008941U (en) A kind of solar energy quartz crucible holder device
CN104372398A (en) Pressure tank for indium phosphide growth
CN203834048U (en) Novel PBN crucible

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140402

WD01 Invention patent application deemed withdrawn after publication