TW201816202A - Heat shield of crystal seed growth crucible and method thereof - Google Patents
Heat shield of crystal seed growth crucible and method thereof Download PDFInfo
- Publication number
- TW201816202A TW201816202A TW106107636A TW106107636A TW201816202A TW 201816202 A TW201816202 A TW 201816202A TW 106107636 A TW106107636 A TW 106107636A TW 106107636 A TW106107636 A TW 106107636A TW 201816202 A TW201816202 A TW 201816202A
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- crystal growth
- growth furnace
- heat shield
- shield
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
Description
本發明涉及一種單晶生長爐熱屏,屬於單晶矽的生產製造設備。 The invention relates to a single crystal growth furnace heat shield, which belongs to the production equipment of single crystal silicon.
單晶矽是具有完整的點陣結構的晶體,是一種良好的半導體材料,目前被廣泛用於半導體元件以及太陽能電池的製造。現代下游IC產業對矽晶圓材料的品質要求越來越高,這就要求提拉法生長的矽單晶具有更少的缺陷和雜質。 Monocrystalline silicon is a crystal with a complete lattice structure and is a good semiconductor material. It is currently widely used in the manufacture of semiconductor elements and solar cells. The modern downstream IC industry has higher and higher requirements for the quality of silicon wafer materials, which requires that silicon single crystals grown by the pulling method have fewer defects and impurities.
現有的單晶矽製造設備為單晶生長爐,其爐體主要包括爐底、下爐體、中爐體、上爐蓋、隔離閥、副爐室和提拉裝置七大部分組成。其中所述上爐蓋上懸掛有熱屏。單晶生長爐熱屏的使用減少了矽熔體、坩堝等在垂直方向的輻射熱損失,大大降低了長晶時所須消耗的功率;改變了氬氣的流動方式和速度,更有效的帶走一氧化矽。 The existing single crystal silicon manufacturing equipment is a single crystal growth furnace, and the furnace body mainly includes seven parts: a furnace bottom, a lower furnace body, a middle furnace body, an upper furnace cover, an isolation valve, an auxiliary furnace chamber and a lifting device. A heat shield is hung on the upper furnace lid. The use of the heat shield of the single crystal growth furnace reduces the radiant heat loss of the silicon melt and crucible in the vertical direction, which greatly reduces the power required to grow the crystal; it changes the flow mode and speed of argon and takes it away more effectively. Silicon monoxide.
但是目前矽單晶生長提拉爐的熱屏材料一般為鉬或碳化矽或有塗層的高純石墨,由於熱屏所處位置非常靠近矽熔體,所以很容易引入鉬、碳等污染源。所以選擇合適的熱屏材料是一個直拉矽熱場設計重要內容。 However, the heat shield material of the current silicon single crystal growth furnace is generally molybdenum or silicon carbide or coated high-purity graphite. Since the heat shield is located very close to the silicon melt, it is easy to introduce molybdenum, carbon and other pollution sources. So choosing the right heat shield material is an important content of a straight-pull silicon thermal field design.
本發明的目的在於提供一種單晶生長爐熱屏及其製造方法,以解決現有的單晶生長爐熱屏因採用的材料為鉬或碳化矽或有塗層的高純石墨,容易對單晶造成污染的問題。 The purpose of the present invention is to provide a single crystal growth furnace heat shield and a manufacturing method thereof, in order to solve the existing single crystal growth furnace heat shield because the material used is molybdenum or silicon carbide or coated high-purity graphite, which is easy to apply to single crystals. Problems causing pollution.
為了解決上述的技術問題,本發明提供一種單晶生長爐熱屏,包括屏體,所述屏體內形成有容置空間,所述屏體的材料為石英玻璃。 In order to solve the above technical problems, the present invention provides a single crystal growth furnace hot screen, which includes a screen body, and an accommodation space is formed in the screen body, and the screen body is made of quartz glass.
可選的,在所述單晶生長爐熱屏中,所述屏體的外表面和內表面塗有氫氧化鋇塗層。 Optionally, in the hot screen of the single crystal growth furnace, the outer surface and the inner surface of the screen body are coated with a barium hydroxide coating.
可選的,在所述單晶生長爐熱屏中,所述氫氧化鋇塗層採用含有結晶水的氫氧化鋇。 Optionally, in the hot screen of the single crystal growth furnace, the barium hydroxide coating layer uses barium hydroxide containing crystal water.
可選的,在所述單晶生長爐熱屏中,所述屏體內填充有隔熱材料,形成有隔熱層。 Optionally, in the heat shield of the single crystal growth furnace, the shield body is filled with a heat insulation material to form a heat insulation layer.
可選的,在所述單晶生長爐熱屏中,所述隔熱層的材料為固態碳氈。 Optionally, in the heat shield of the single crystal growth furnace, the material of the heat insulation layer is a solid carbon felt.
本發明還提供了一種製造單晶生長爐熱屏的方法,包括:採用石英材料形成屏體。 The invention also provides a method for manufacturing a heat shield of a single crystal growth furnace, which comprises: forming a shield body using a quartz material.
可選的,在所述製造單晶生長爐熱屏的方法中,所述屏體的外表面和內表面塗有氫氧化鋇塗層。 Optionally, in the method for manufacturing a heat shield of a single crystal growth furnace, the outer surface and the inner surface of the shield body are coated with a barium hydroxide coating.
可選的,在所述製造單晶生長爐熱屏的方法中,所述氫氧化鋇塗層採用含有結晶水的氫氧化鋇。 Optionally, in the method for manufacturing a heat shield of a single crystal growth furnace, the barium hydroxide coating layer uses barium hydroxide containing crystal water.
可選的,在所述製造單晶生長爐熱屏的方法中,所述屏體內填充有隔熱材料,形成有隔熱層。 Optionally, in the method for manufacturing a heat shield of a single crystal growth furnace, the shield body is filled with a heat insulation material to form a heat insulation layer.
可選的,在所述製造單晶生長爐熱屏的方法中,所述隔熱層 的材料是固態碳氈。 Optionally, in the method for manufacturing a heat shield of a single crystal growth furnace, a material of the heat insulation layer is a solid carbon felt.
在本發明提供的單晶生長爐熱屏及其製造方法,包括屏體,所述屏體內形成有容置空間,所述屏體的材料用石英玻璃,避免引入鉬、碳等污染源,可以有效減少單晶生長爐熱屏對晶體的污染。進一步的,所述屏體的外表面和內表面都塗有含有結晶水的氫氧化鋇塗層,所述氫氧化鋇塗層會與空氣中的二氧化碳反應形成碳酸鋇。在單晶生長爐中加熱時,所述碳酸鋇會分解形成氧化鋇,接著與石英玻璃中的二氧化矽反應形成具有高熔點的矽酸鋇材料。由於矽酸鋇的催化作用,在屏體表面形成一層緻密微小的白矽石結晶,所述白矽石結晶增加了屏體的強度,減少高溫軟化現象。 The heat shield of a single crystal growth furnace provided by the present invention and a method for manufacturing the same include a shield body, in which a accommodating space is formed. The material of the shield body is quartz glass, which can avoid the introduction of pollution sources such as molybdenum and carbon, which can effectively Reduce the crystal contamination of the heat shield of the single crystal growth furnace. Further, the outer surface and the inner surface of the screen body are coated with a barium hydroxide coating containing crystal water, and the barium hydroxide coating reacts with carbon dioxide in the air to form barium carbonate. When heated in a single crystal growth furnace, the barium carbonate decomposes to form barium oxide, and then reacts with silicon dioxide in quartz glass to form a barium silicate material with a high melting point. Due to the catalysis of barium silicate, a layer of dense and fine white silica crystals is formed on the surface of the screen body. The white silica crystals increase the strength of the screen body and reduce the phenomenon of high temperature softening.
10‧‧‧屏體 10‧‧‧Screen
11‧‧‧隔熱層 11‧‧‧ Insulation
圖1是本發明提供的單晶生長爐熱屏結構示意圖;圖2是本發明提供的單晶生長爐熱屏製造方法流程示意圖。 FIG. 1 is a schematic diagram of a heat shield structure of a single crystal growth furnace provided by the present invention; FIG. 2 is a schematic flowchart of a method of manufacturing a heat shield of a single crystal growth furnace provided by the present invention.
以下結合附圖和具體實施例對本發明提出的單晶生長爐熱屏及其製造方法作進一步詳細說明。根據下面說明和請求項,本發明的優點和特徵將更清楚。需說明的是,附圖均採用非常簡化的形式且均使用非精准的比例,僅用以方便、明晰地輔助說明本發明實施例的目的。 The single-crystal growth furnace hot screen and the manufacturing method thereof provided by the present invention will be further described in detail below with reference to the drawings and specific embodiments. The advantages and features of the invention will become clearer from the following description and claims. It should be noted that the drawings are in a very simplified form and all use inaccurate proportions, which are only used to facilitate and clearly assist the description of the embodiments of the present invention.
本發明提供了一種單晶生長爐熱屏,如圖1所示,包括屏體10,所述屏體10的內部形成有容置空間,所述屏體10的材料為石英玻璃。用石英玻璃作為所述單晶生長爐熱屏的屏體,避免引入鉬、碳等污染源,可以有效減少單晶生長爐熱屏對晶體的污染。進一步的,並且由於石英玻 璃的反射率較高,從熔體表面輻射到熱屏的熱量低。而且石英玻璃相對於石墨具有更低的熱導率,所以保溫性能更好。 The present invention provides a single crystal growth furnace thermal screen. As shown in FIG. 1, the screen includes a screen body 10. An accommodation space is formed in the screen body 10, and the screen body 10 is made of quartz glass. Using quartz glass as the screen body of the heat shield of the single crystal growth furnace, avoiding the introduction of molybdenum, carbon and other pollution sources, can effectively reduce the crystal pollution of the heat shield of the single crystal growth furnace. Further, and because the reflectivity of quartz glass is high, the heat radiated from the melt surface to the heat shield is low. In addition, quartz glass has a lower thermal conductivity than graphite, so the thermal insulation performance is better.
具體的,所述屏體10的外表面和內表面塗有氫氧化鋇塗層(圖中未示出);並且所述氫氧化鋇塗層是含有結晶水的氫氧化鋇。所述含有結晶水的氫氧化鋇會與空氣中的二氧化碳反應形成碳酸鋇。在單晶生長爐中加熱時,所述碳酸鋇會分解形成氧化鋇,接著與所述屏體10的材料石英玻璃反應形成具有高熔點的矽酸鋇材料。由於所述矽酸鋇材料的催化作用,使得在所述屏體10的表面形成一層緻密微小的白矽石結晶,所述白矽石結晶能夠增加所述屏體10的強度,減少高溫軟化現象。 Specifically, the outer surface and the inner surface of the screen body 10 are coated with a barium hydroxide coating (not shown in the figure); and the barium hydroxide coating is barium hydroxide containing crystal water. The barium hydroxide containing crystal water will react with carbon dioxide in the air to form barium carbonate. When heated in a single crystal growth furnace, the barium carbonate decomposes to form barium oxide, and then reacts with quartz glass, which is the material of the screen body 10, to form a barium silicate material with a high melting point. Due to the catalytic action of the barium silicate material, a layer of dense and fine white silica crystals is formed on the surface of the screen body 10, and the white silica crystals can increase the strength of the screen body 10 and reduce the phenomenon of high temperature softening. .
具體而言,所述屏體10內填充有隔熱材料,形成有隔熱層11。所述隔熱層11的材料優選為固態碳氈。因為所述固態碳氈具有更好的保溫性能,並且所述屏體10的熱導率低,這將減少從熔體到晶體的熱量,有助於晶體降溫。 Specifically, the screen body 10 is filled with a heat insulation material, and a heat insulation layer 11 is formed. The material of the thermal insulation layer 11 is preferably a solid carbon felt. Because the solid carbon felt has better thermal insulation performance and the thermal conductivity of the screen body 10 is low, this will reduce the heat from the melt to the crystal and help the crystal to cool down.
本發明提供了一種製造單晶生長爐熱屏的方法,流程示意圖如圖2所示,所述製造單晶生長爐熱屏的方法包括如下步驟:步驟S21,提供有容置空間的屏體;步驟S22,向所述屏體中填充隔熱材料,形成隔熱層。 The present invention provides a method for manufacturing a heat shield of a single crystal growth furnace, and a schematic flow chart is shown in FIG. 2. The method for manufacturing a heat shield of a single crystal growth furnace includes the following steps: Step S21, providing a screen body with an accommodation space; In step S22, a heat insulating material is filled into the screen body to form a heat insulating layer.
具體而言,所述所述屏體的材料是石英玻璃,用石英玻璃作為所述單晶生長爐熱屏的屏體,避免引入鉬、碳等污染源,可以有效減少單晶生長爐熱屏對晶體的污染。進一步的,由於石英玻璃的反射率較高,從熔體表面輻射到熱屏的熱量低。而且石英玻璃相對於石墨具有更低的熱導率,所以保溫性能更好。 Specifically, the material of the screen body is quartz glass, and the use of quartz glass as the screen body of the heat shield of the single crystal growth furnace can avoid the introduction of molybdenum, carbon and other pollution sources, which can effectively reduce the heat shield of the single crystal growth furnace. Crystal contamination. Further, because the reflectivity of the quartz glass is high, the heat radiated from the melt surface to the heat shield is low. In addition, quartz glass has a lower thermal conductivity than graphite, so the thermal insulation performance is better.
具體而言,所述屏體的外表面和內表面塗有含有結晶水的氫氧化鋇塗層,所述含有結晶水的氫氧化鋇會與空氣中的二氧化碳反應形成碳酸鋇。在單晶生長爐中加熱時,所述碳酸鋇會分解形成氧化鋇,接著與所述屏體的材料石英玻璃反應形成具有高熔點的矽酸鋇材料。由於所述矽酸鋇材料的催化作用,使得在所述屏體的表面形成一層緻密微小的白矽石結晶,所述白矽石結晶能夠增加所述屏體的強度,減少高溫軟化現象。 Specifically, the outer surface and the inner surface of the screen body are coated with a barium hydroxide coating containing crystal water, and the barium hydroxide containing crystal water will react with carbon dioxide in the air to form barium carbonate. When heated in a single crystal growth furnace, the barium carbonate decomposes to form barium oxide, and then reacts with quartz glass, which is the material of the screen body, to form a barium silicate material with a high melting point. Due to the catalysis of the barium silicate material, a layer of dense and fine white silica crystal is formed on the surface of the screen body. The white silica crystal can increase the strength of the screen body and reduce the phenomenon of high temperature softening.
具體而言,所述隔熱層的材料為固態碳氈,因為固態碳氈具有優異的保溫性能。並且所述屏體10的熱導率低,這將減少從熔體到晶體的熱量,有助於晶體降溫。 Specifically, the material of the heat-insulating layer is a solid carbon felt because the solid carbon felt has excellent thermal insulation properties. And the thermal conductivity of the screen body 10 is low, which will reduce the heat from the melt to the crystal and help the crystal to cool down.
上述描述僅是對本發明較佳實施例的描述,並非對本發明範圍的任何限定,本發明領域的普通技術人員根據上述揭示內容做的任何變更、修飾,均屬於申請專利範圍的保護範圍。 The above description is only a description of the preferred embodiments of the present invention, and does not limit the scope of the present invention in any way. Any changes and modifications made by those skilled in the art in accordance with the above disclosure are within the protection scope of the patent application.
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
??201610959752.X | 2016-10-28 | ||
CN201610959752.XA CN108018600A (en) | 2016-10-28 | 2016-10-28 | Monocrystal growing furnace heat shielding and its manufacture method |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201816202A true TW201816202A (en) | 2018-05-01 |
Family
ID=62083992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106107636A TW201816202A (en) | 2016-10-28 | 2017-03-08 | Heat shield of crystal seed growth crucible and method thereof |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN108018600A (en) |
TW (1) | TW201816202A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI722449B (en) * | 2018-11-12 | 2021-03-21 | 大陸商上海新昇半導體科技有限公司 | A reflective screen of a monocrystal growth furnace and the monocrystal growth furnace |
TWI739699B (en) * | 2020-07-01 | 2021-09-11 | 中國科學院上海微系統與資訊技術研究所 | Composite heat insulation structure for single crystal silicon growth furnace and single crystal silicon growth furnace |
TWI755220B (en) * | 2020-07-01 | 2022-02-11 | 中國科學院上海微系統與資訊技術研究所 | A thin-film thermal insulation sheet for a single crystal silicon growth furnace and a single crystal silicon growth furnace |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6197111B1 (en) * | 1999-02-26 | 2001-03-06 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
JP4193503B2 (en) * | 2003-01-31 | 2008-12-10 | 株式会社Sumco | Method for producing silicon single crystal |
CN201506711U (en) * | 2009-09-30 | 2010-06-16 | 常州天合光能有限公司 | Crucible for casting ingot |
CN101696514A (en) * | 2009-09-30 | 2010-04-21 | 常州天合光能有限公司 | Method for producing polycrystal ingot |
CN101838847A (en) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | Single crystal furnace device |
CN102373503A (en) * | 2010-08-25 | 2012-03-14 | 扬州华尔光电子材料有限公司 | Coated quartz crucible for polysilicon cast ingots |
JP2012101971A (en) * | 2010-11-09 | 2012-05-31 | Mitsubishi Materials Techno Corp | Apparatus for producing single crystal silicon |
CN201901727U (en) * | 2010-12-11 | 2011-07-20 | 江阴市华英光伏科技有限公司 | Closed thermal field system for single crystal furnace |
CN102260902B (en) * | 2011-07-15 | 2013-09-11 | 江苏晶鼎电子材料有限公司 | Method for preparing quartz crucible coating |
JP5904079B2 (en) * | 2012-10-03 | 2016-04-13 | 信越半導体株式会社 | Silicon single crystal growing apparatus and silicon single crystal growing method |
-
2016
- 2016-10-28 CN CN201610959752.XA patent/CN108018600A/en active Pending
-
2017
- 2017-03-08 TW TW106107636A patent/TW201816202A/en unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI722449B (en) * | 2018-11-12 | 2021-03-21 | 大陸商上海新昇半導體科技有限公司 | A reflective screen of a monocrystal growth furnace and the monocrystal growth furnace |
TWI739699B (en) * | 2020-07-01 | 2021-09-11 | 中國科學院上海微系統與資訊技術研究所 | Composite heat insulation structure for single crystal silicon growth furnace and single crystal silicon growth furnace |
TWI755220B (en) * | 2020-07-01 | 2022-02-11 | 中國科學院上海微系統與資訊技術研究所 | A thin-film thermal insulation sheet for a single crystal silicon growth furnace and a single crystal silicon growth furnace |
Also Published As
Publication number | Publication date |
---|---|
CN108018600A (en) | 2018-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8123855B2 (en) | Device and process for growing Ga-doped single silicon crystals suitable for making solar cells | |
CN102758249B (en) | A kind of preparation method of colourless boule monocrystal | |
CN104911690B (en) | The growing method and grower of a kind of indium phosphide single crystal | |
TW201816202A (en) | Heat shield of crystal seed growth crucible and method thereof | |
CN101696514A (en) | Method for producing polycrystal ingot | |
CN103305903B (en) | A kind of high nitrogen pressure fusing assistant-falling crucible method prepares the method for GaN crystal | |
CN114990690B (en) | Crucible device for preparing silicon carbide monocrystal by gas phase sublimation method | |
JP4393555B2 (en) | Single crystal growth method | |
CN105970295A (en) | Device and method of growing silicon carbide crystals through liquid phase method | |
CN107245759A (en) | A kind of growing method of cerium ion-doped multicomponent garnet structure scintillation crystal | |
TW201829860A (en) | Crucible and manufacture method thereof, and 4h-sic crystal growth method | |
CN206751974U (en) | A kind of device for growing carborundum crystals | |
CN104264213A (en) | EFG (edge-defined film-fed growth) device of large-size doped sapphire crystals and growth process thereof | |
CN208791811U (en) | Crystal growing apparatus | |
CN110484965A (en) | A kind of gallium oxide crystal and its growing method and grower | |
CN204325549U (en) | A kind of silicon carbide crystal growing device | |
US5895527A (en) | Single crystal pulling apparatus | |
TWI726505B (en) | Draft tube of crystal growing furnace and the crystal growing furnace | |
CN103255469A (en) | Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer | |
WO2019085679A1 (en) | Device for preparing multinary alloy compound | |
JP2018104248A (en) | Quartz glass crucible for pulling silicon single crystal | |
CN102728582B (en) | Washing method for graphite piece for growing mono-crystalline silicon by using Czochralski method | |
CN106894082B (en) | Monocrystalline silicon growing furnace | |
CN208501149U (en) | A kind of crucible | |
CN2884103Y (en) | Quartz crucible for vertical pulling method for prodn. of monocrystalline silicon |