CN104695013A - Indium phosphide polycrystal synthesis apparatus without liquid encapsulation - Google Patents
Indium phosphide polycrystal synthesis apparatus without liquid encapsulation Download PDFInfo
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- CN104695013A CN104695013A CN201310646123.8A CN201310646123A CN104695013A CN 104695013 A CN104695013 A CN 104695013A CN 201310646123 A CN201310646123 A CN 201310646123A CN 104695013 A CN104695013 A CN 104695013A
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Abstract
The invention provides an indium phosphide polycrystal synthesis apparatus without liquid encapsulation. The apparatus comprises a synthesis furnace body and a graphite system positioned in the synthesis furnace body, the graphite system comprises a heat insulation unit, a heating unit and a synthesis unit, the heat insulation unit comprises a graphite heat insulation cover and a graphite heat insulation barrel, the heating unit comprises an electrode, a heater and a peripheral temperature control circuit, the synthesis unit and the electrode and the heater in the heating unit are positioned in the heat insulation unit, the heater and the electrode in the heating unit are positioned at the middle and lower portion of the synthesis unit, the synthesis unit comprises a graphite crucible cover, a graphite crucible and a boron nitride crucible, the graphite system also comprises a motion unit for making the synthesis unit elevate and rotate, and the motion unit is connected with the synthesis unit and the synthesis furnace body; and a connection of graphite crucible and the graphite crucible cover is provided with a stepped shape to realize anastomosis.
Description
Technical field
The present invention relates to a kind of synthesizer of indium phosphide polycrystal, especially relate to a kind of aneroid sealing-in synthesizer of indium phosphide polycrystal.
Background technology
Along with the development and progress of science and technology, much more more and more semiconductor material is applied in the opto-electronic device, the materials such as such as indium phosphide polycrystal, and the material require synthesis such as indium phosphide polycrystal, the synthesis technique of current existing indium phosphide polycrystal also exists numerous defect and inconvenience, and the indium phosphide polycrystal crystallinity of synthesis is bad and yield rate is lower.Therefore, find a kind of aneroid sealing-in synthesizer of above defect of can avoiding and become at present exigence the most.
Summary of the invention
The invention provides a kind of indium phosphide polycrystal aneroid involution apparatus for converting, comprise synthesis body of heater and be positioned at the graphite system synthesizing body of heater, graphite system comprises heat-insulation unit, heating unit and synthesis unit, heat-insulation unit comprises graphite stay-warm case and graphite insulated tank, heating unit comprises electrode, well heater and peripheral temperature control circuit, synthesis unit, and electrode in heating unit and well heater are positioned at the inside of heat-insulation unit, well heater in heating unit and electrode are positioned at the peripheral middle and lower part of synthesis unit, synthesis unit comprises plumbago crucible lid, plumbago crucible and boron nitride crucible, it is characterized in that, described graphite system also comprises makes synthesis unit be elevated the moving cell rotated, moving cell and synthesis unit, synthesis body of heater is connected, plumbago crucible and plumbago crucible cover and match at junction design step shape.
Embodiment
Below in conjunction with specific embodiment, set forth the present invention further.Should be understood that these embodiments are only not used in for illustration of the present invention to limit the scope of the invention.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after the content of having read the present invention's instruction.
This indium phosphide polycrystal aneroid involution apparatus for converting, comprise synthesis body of heater and be positioned at the graphite system synthesizing body of heater, graphite system comprises heat-insulation unit, heating unit and synthesis unit, heat-insulation unit comprises graphite stay-warm case and graphite insulated tank, heating unit comprises electrode, well heater and peripheral temperature control circuit, synthesis unit, and electrode in heating unit and well heater are positioned at the inside of heat-insulation unit, well heater in heating unit and electrode are positioned at the peripheral middle and lower part of synthesis unit, synthesis unit comprises plumbago crucible lid, plumbago crucible and boron nitride crucible, it is characterized in that, described graphite system also comprises makes synthesis unit be elevated the moving cell rotated, moving cell and synthesis unit, synthesis body of heater is connected, plumbago crucible and plumbago crucible cover and match at junction design step shape.
Claims (1)
1. an indium phosphide polycrystal aneroid involution apparatus for converting, comprise synthesis body of heater and be positioned at the graphite system synthesizing body of heater, graphite system comprises heat-insulation unit, heating unit and synthesis unit, heat-insulation unit comprises graphite stay-warm case and graphite insulated tank, heating unit comprises electrode, well heater and peripheral temperature control circuit, synthesis unit, and electrode in heating unit and well heater are positioned at the inside of heat-insulation unit, well heater in heating unit and electrode are positioned at the peripheral middle and lower part of synthesis unit, synthesis unit comprises plumbago crucible lid, plumbago crucible and boron nitride crucible, it is characterized in that, described graphite system also comprises makes synthesis unit be elevated the moving cell rotated, moving cell and synthesis unit, synthesis body of heater is connected, plumbago crucible and plumbago crucible cover and match at junction design step shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310646123.8A CN104695013A (en) | 2013-12-04 | 2013-12-04 | Indium phosphide polycrystal synthesis apparatus without liquid encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310646123.8A CN104695013A (en) | 2013-12-04 | 2013-12-04 | Indium phosphide polycrystal synthesis apparatus without liquid encapsulation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104695013A true CN104695013A (en) | 2015-06-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310646123.8A Pending CN104695013A (en) | 2013-12-04 | 2013-12-04 | Indium phosphide polycrystal synthesis apparatus without liquid encapsulation |
Country Status (1)
| Country | Link |
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| CN (1) | CN104695013A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106381525A (en) * | 2016-10-25 | 2017-02-08 | 北京鼎泰芯源科技发展有限公司 | Device capable of reducing InP crystal twin based on VGF method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11180792A (en) * | 1997-12-18 | 1999-07-06 | Japan Energy Corp | Production of compound semiconductor single crystal |
| CN1784514A (en) * | 2003-05-07 | 2006-06-07 | 住友电气工业株式会社 | Indium phosphide substrate, indium phosphide single crystal and process for producing them |
| CN101498047A (en) * | 2009-01-23 | 2009-08-05 | 中国电子科技集团公司第四十六研究所 | Gallium arsenide polycrystal non-liquid seal synthesizing method and apparatus |
-
2013
- 2013-12-04 CN CN201310646123.8A patent/CN104695013A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11180792A (en) * | 1997-12-18 | 1999-07-06 | Japan Energy Corp | Production of compound semiconductor single crystal |
| CN1784514A (en) * | 2003-05-07 | 2006-06-07 | 住友电气工业株式会社 | Indium phosphide substrate, indium phosphide single crystal and process for producing them |
| CN101498047A (en) * | 2009-01-23 | 2009-08-05 | 中国电子科技集团公司第四十六研究所 | Gallium arsenide polycrystal non-liquid seal synthesizing method and apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106381525A (en) * | 2016-10-25 | 2017-02-08 | 北京鼎泰芯源科技发展有限公司 | Device capable of reducing InP crystal twin based on VGF method |
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| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150610 |