CN103730393A - Gas intake device of plasma etching equipment - Google Patents
Gas intake device of plasma etching equipment Download PDFInfo
- Publication number
- CN103730393A CN103730393A CN201310699903.9A CN201310699903A CN103730393A CN 103730393 A CN103730393 A CN 103730393A CN 201310699903 A CN201310699903 A CN 201310699903A CN 103730393 A CN103730393 A CN 103730393A
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- Prior art keywords
- plasma etching
- etching equipment
- compression ring
- gas
- even compression
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a gas intake device of plasma etching equipment. The gas intake device of the plasma etching equipment comprises a plasma source chamber connected with the plasma etching equipment, and a hollow connecting piece of a reaction cavity. A gas evening ring is fixed in the connecting piece, and a notch is formed in the gas evening ring. Ports, on the two sides of the notch, of the gas evening ring are communicated with two ports of a tee joint fixed in the connecting piece. A third port of the tee joint is communicated with a gas intake pipe which is arranged on a gas intake opening and a gas outlet opening in the connecting piece in a communication mode, and a plurality of spraying holes are formed in the inner side wall of the gas evening ring. According to the gas intake device of the plasma etching equipment, evenness of the gas flow density at a large-size substrate can be greatly improved, and the plasma etching evenness is improved. The gas intake device of the plasma etching equipment is simple in structure, easy to manufacture and capable of being improved according to different application occasions so as to adapt to different requirements.
Description
Technical field
The present invention relates to the inlet duct in a kind of plasma-treating technology, be applicable to plasma etching, plasma ion assisted deposition, plasma clean equipment.
Background technology
In plasma-treating technology, the uniformity that process gas distributes at substrate surface is the precondition and guarantee of even etching.Traditionally, process gas is all directly to spray through an even flow plate by air inlet pipe, gas is the diffusion of mind-set surrounding from even flow plate, this inlet duct can meet the demands within the specific limits substantially for small size substrate, for large size substrate due to the decay of air-flow make substrate edge near gas density more and more lower, the uniformity variation of gas, thus the uniformity of plasma density cannot be guaranteed.Fig. 1 is shown in by tradition inlet duct schematic diagram.Because current semiconductor-based chip size is increasing, characteristic size is more and more less, and traditional inlet duct cannot meet the needs of technique.For this reason, in the urgent need to studying a kind of new inlet duct, solve process gas homogeneity question.
Summary of the invention
Technical problem to be solved by this invention is, for prior art deficiency, provides a kind of plasma etching equipment inlet duct, solves the poor problem of intake uniformity in current plasma processes.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of plasma etching equipment inlet duct, comprises and connect the plasma source chamber of plasma etching equipment and the hollow connector of reaction cavity; In described connector, be fixed with even compression ring; On described even compression ring, offer breach, the even compression ring port of described breach both sides is communicated with two ports that are fixed on the three-way connection in connector; The 3rd port of described three-way connection is communicated with the air inlet that is opened on described connector and gas outlet air inlet pipe with one is communicated with; On described even compression ring madial wall, offer multiple spray apertures.
Even compression ring of the present invention adopts the interior polishing 316L stainless steel tube that diameter is 6～15mm to make, described even compression ring diameter is 250mm, described multiple spray apertures size is identical, each spray apertures diameter is 0.5 ~ 3mm, the spacing of adjacent two spray apertures is 1 ~ 5mm, and described multiple spray apertures are evenly distributed on described even compression ring madial wall; The size of the present invention to even compression ring, size, the spacing of spray apertures are optimized design, can greatly improve the uniformity of the air-flow of large size substrate processing.
The size of the each spray apertures of even compression ring can be identical, also can increase gradually or reduce according to actual conditions; The distribution of spray apertures can be equidistant, also can increase gradually or reduce according to actual conditions.
Described even compression ring is fixedly connected with described connector inwall by securing member.
Connector of the present invention is flange.
Compared with prior art, the beneficial effect that the present invention has is: the gas of the even compression ring of the present invention is sprayed to center by surrounding, the gas density that from surrounding to center spray process, single spray apertures sprays out is more and more lower, but the gas Jiang center that each spray apertures sprays out is collected, thereby made up the deficiency that single spray apertures is decayed to center gas by surrounding, improved the gas density to center by surrounding; The present invention can improve the current density uniformity at large size substrate place greatly, thereby improves plasma etching uniformity; The present invention is simple in structure, is easy to manufacture, and can make improvements to adapt to different demands according to different application occasion.
Accompanying drawing explanation
Fig. 1 is traditional uniform flow inlet duct schematic diagram;
Fig. 2 is one embodiment of the invention vertical view;
Fig. 3 is one embodiment of the invention end view;
Fig. 4 is even compression ring structural representation.
Embodiment
As shown in Figure 2 to 4, one embodiment of the invention comprises the plasma source chamber 2 of connection plasma etching equipment and the hollow connector 4 of reaction cavity; In described connector, be fixed with even compression ring 1; On described even compression ring 1, offer breach 9, even compression ring 1 port of described breach 9 both sides is communicated with two ports that are fixed on the three-way connection 3 in connector 4; The 3rd port of described three-way connection 3 is communicated with the air inlet 7 that is opened on described connector 4 with one and the air inlet pipe 10 of gas outlet 8 is communicated with; On described even compression ring 1 madial wall, offer multiple spray apertures 6.
In the present embodiment, it is that the interior polishing 316L stainless steel tube of 6～15mm is made that even compression ring 1 adopts diameter, and described even compression ring 1 diameter is 250mm; Even compression ring 1 is fixedly connected with described connector 4 inwalls by securing member 5.
In the present embodiment, multiple spray apertures 6 sizes are identical, and each spray apertures 6 diameters are 0.5 ~ 3mm, and the spacing of adjacent two spray apertures is 1 ~ 5mm.
In the present embodiment, multiple spray apertures 6 are evenly distributed on described even compression ring 1 madial wall.
In the present embodiment, connector 4 is flange.
The process gas mixing enters into even compression ring by the air inlet pipe 10, the three-way connection 3 that are welded on flange, and air-flow sprays by spray apertures 6; The inlet duct that adopts the embodiment of the present invention to provide can obviously improve the uniformity of process gas in plasma reaction chamber, thereby improves the uniformity of plasma treatment.
Claims (6)
1. a plasma etching equipment inlet duct, comprises and connects the plasma source chamber (2) of plasma etching equipment and the hollow connector (4) of reaction cavity (6); It is characterized in that, in described connector, be fixed with even compression ring (1); On described even compression ring (1), offer breach (9), even compression ring (1) port of described breach (9) both sides is communicated with two ports that are fixed on the three-way connection (3) in connector (4); The 3rd port of described three-way connection (3) is communicated with the air inlet (7) that is opened on described connector (4) and gas outlet (8) air inlet pipe (10) with one is communicated with; On described even compression ring (1) madial wall, offer multiple spray apertures (6).
2. plasma etching equipment inlet duct according to claim 1, is characterized in that, described even compression ring (1) adopts the interior polishing 316L stainless steel tube that diameter is 6～15mm to make, and described even compression ring (1) diameter is 250mm.
3. plasma etching equipment inlet duct according to claim 1 and 2, is characterized in that, described even compression ring (1) is fixedly connected with described connector (4) inwall by securing member (5).
4. plasma etching equipment inlet duct according to claim 3, is characterized in that, described multiple spray apertures (6) size is identical, and each spray apertures (6) diameter is 0.5 ~ 3mm, and the spacing of adjacent two spray apertures is 1 ~ 5mm.
5. plasma etching equipment inlet duct according to claim 4, is characterized in that, described multiple spray apertures (6) are evenly distributed on described even compression ring (1) madial wall.
6. plasma etching equipment inlet duct according to claim 5, is characterized in that, described connector (4) is flange.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310699903.9A CN103730393A (en) | 2013-12-19 | 2013-12-19 | Gas intake device of plasma etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310699903.9A CN103730393A (en) | 2013-12-19 | 2013-12-19 | Gas intake device of plasma etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103730393A true CN103730393A (en) | 2014-04-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310699903.9A Pending CN103730393A (en) | 2013-12-19 | 2013-12-19 | Gas intake device of plasma etching equipment |
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| CN (1) | CN103730393A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465282A (en) * | 2014-11-10 | 2015-03-25 | 中国电子科技集团公司第四十八研究所 | Ion beam etching machine working table with cooling structure |
| CN107293469A (en) * | 2017-06-26 | 2017-10-24 | 武汉华星光电半导体显示技术有限公司 | Ionisation chamber, ion implantation equipment and ion implantation method |
| US10269542B2 (en) * | 2017-06-26 | 2019-04-23 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Ionization chamber, ion-implantation apparatus and ion-implantation method |
| CN110544645A (en) * | 2018-05-28 | 2019-12-06 | 北京北方华创微电子装备有限公司 | Uniform flow member for process chamber, process chamber and semiconductor processing equipment |
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| CN203690266U (en) * | 2013-12-19 | 2014-07-02 | 中国电子科技集团公司第四十八研究所 | Gas intake device of plasma etching equipment |
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2013
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Patent Citations (10)
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| CN201063957Y (en) * | 2007-06-18 | 2008-05-21 | 广州市兴森电子有限公司 | Improved structure of air supply system in plasma processing apparatus |
| CN101369515A (en) * | 2007-08-16 | 2009-02-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465282A (en) * | 2014-11-10 | 2015-03-25 | 中国电子科技集团公司第四十八研究所 | Ion beam etching machine working table with cooling structure |
| CN107293469A (en) * | 2017-06-26 | 2017-10-24 | 武汉华星光电半导体显示技术有限公司 | Ionisation chamber, ion implantation equipment and ion implantation method |
| CN107293469B (en) * | 2017-06-26 | 2019-03-01 | 武汉华星光电半导体显示技术有限公司 | Ionisation chamber, ion implantation equipment and ion implantation method |
| US10269542B2 (en) * | 2017-06-26 | 2019-04-23 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Ionization chamber, ion-implantation apparatus and ion-implantation method |
| CN110544645A (en) * | 2018-05-28 | 2019-12-06 | 北京北方华创微电子装备有限公司 | Uniform flow member for process chamber, process chamber and semiconductor processing equipment |
| CN110544645B (en) * | 2018-05-28 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Uniform flow member for process chamber, process chamber and semiconductor processing equipment |
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Application publication date: 20140416 |