CN106929819A - A kind of MOCVD device reaction cavity - Google Patents
A kind of MOCVD device reaction cavity Download PDFInfo
- Publication number
- CN106929819A CN106929819A CN201710203985.1A CN201710203985A CN106929819A CN 106929819 A CN106929819 A CN 106929819A CN 201710203985 A CN201710203985 A CN 201710203985A CN 106929819 A CN106929819 A CN 106929819A
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- China
- Prior art keywords
- reaction chamber
- cavity
- spray
- spray head
- cooling water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The invention discloses a kind of MOCVD device reaction cavity, including：Cavity wall, it forms reaction chamber；Cavity lid, it is arranged at the top end opening of reaction chamber；Slide glass dish, its bottom for being arranged on reaction chamber；Spray head, its top for being arranged on reaction chamber is provided with the various admittance areas for entering reaction chamber for gas with various on spray head, mouth spray is provided with every kind of admittance area, and the air outlet of mouth spray is connected with reaction chamber, and mouth spray is vertical with the slide glass dish；Various admission lines, are connected with corresponding admittance area respectively, and the gas outlet of admission line connects through cavity lid with the air inlet port of the mouth spray, and the air inlet of admission line is located at outside the cavity lid.The MOCVD device reaction cavity makes different gases enter through respective admission line, enter reaction chamber by with the mouth spray on each self-corresponding admittance area again, so that the gas in reaction chamber is evenly distributed, and then gas field distribution when causing air inlet in reaction chamber is uniform.
Description
Technical field
The present invention relates to MOCVD device, more particularly to a kind of MOCVD device reaction cavity.
Background technology
MOCVD device is the basic equipment of semicon industry, and China depends on import always in the field, with state
The development of the in short supply and Semiconductor Lighting of family's energy, the R＆D work importance of domestic MOCVD equipment is more highlighted.And
One of core component of MOCVD device is the gas handling system of reative cell, and the way of current main flow is to cover design multiple in cavity
Admission, to ensure the uniformity of the gas during air inlet in reaction chamber, do so shortcoming is mainly each admission and is provided with
Mass flowmenter, thus it is relatively costly, and process debugging is extremely complex, reproducibility is poor.
The content of the invention
The technical problem to be solved in the present invention is to provide the MOCVD that a kind of low cost, process debugging are simple, reproducibility is good
Equipment reaction cavity, it is ensured that gas field uniformity during air inlet in reaction chamber
The technical scheme is that：A kind of MOCVD device reaction cavity, including：
Cavity wall, it forms reaction chamber；
Cavity lid, it is arranged at the top end opening of the reaction chamber；
Slide glass dish, its bottom for being arranged on the reaction chamber；
Spray head, its top for being arranged on the reaction chamber is provided with the spray head and enters the reaction for gas with various
Various admittance areas in chamber, are provided with mouth spray, the air outlet of the mouth spray and the reaction chamber on every kind of admittance area
Connection, the mouth spray is vertical with the slide glass dish；
Various admission lines, connect with corresponding admittance area respectively, and the gas outlet of admission line passes through the cavity lid and institute
The air inlet port connection of mouth spray is stated, the air inlet of the admission line is located at outside the cavity lid.
Cooling water channel is provided with the spray head, cooling water outlet tube and cooling water inlet pipe is provided with the spray head,
The delivery port of the cooling water inlet pipe is connected with the water inlet of the cooling water channel, and the water inlet of the cooling water inlet pipe passes through institute
Cavity lid and ft connection are stated, the water inlet of the cooling water outlet tube is connected with the delivery port of the cooling water channel, the cooling
The delivery port of water outlet pipe passes through the cavity lid and ft connection.
Multiple mouth sprays are provided with every kind of admittance area.
The mouth spray is bar shaped seam, and all bar shaped slits on the spray head are into array distribution.
The mouth spray is circular hole, and all circular holes on the spray head form array distribution or circle distribution.
The cooling water channel is set between two neighboring mouth spray on the spray head.
The spray head is connected to the inner side of the cavity lid, and shape between the spray head and the flange by flange
Into cushion chamber.
MOCVD device reaction cavity proposed by the present invention has been abandoned and has ensured air inlet using mass flowmenter in the prior art
When reaction chamber in gas uniformity way, but spray head is set by the top of reaction chamber, set on spray head
Different admittance areas are put, various admission lines are connected with corresponding admittance area respectively, and so different gases are through respective
Admission line enters, then enters reaction chamber by with the mouth spray on each self-corresponding admittance area so that the gas in reaction chamber
Body is evenly distributed, and then gas field distribution when causing air inlet in reaction chamber is uniform, this way low cost, process debugging is simple,
Reproducibility is good.
Brief description of the drawings
Fig. 1 is the sectional structure chart of MOCVD device reaction cavity of the present invention.
Fig. 2 is the enlarged drawing at A in Fig. 1.
Fig. 3 is the enlarged drawing at B in Fig. 1.
Fig. 4 is the plan of the spray head in MOCVD device reaction cavity of the present invention.
Fig. 5 is the oblique view of the spray head in MOCVD device reaction cavity of the present invention.
Specific embodiment
Such as Fig. 1, the MOCVD device reaction cavity in the present embodiment, including cavity wall 1, cavity lid 3, slide glass dish 5, spray
First 4 and various admission lines.
Cavity wall 1 forms reaction chamber 2, and cavity lid 3 is arranged at the top end opening of reaction chamber 2, and slide glass dish 5 is arranged on reaction
The bottom in chamber 2, slide glass dish 5 is rotation.Spray head 4 is arranged on the top of reaction chamber 2, is provided with spray head 4 for different gas
Body enters various admittance areas of reaction chamber, and mouth spray 11 is provided with every kind of admittance area（With reference to Fig. 2）, mouth spray 11 goes out
Gas port connects with reaction chamber 2, and mouth spray 11 is vertical with slide glass dish 5.Various admission lines connect with corresponding admittance area respectively
Logical, the gas outlet of admission line connects through cavity lid 3 with the air inlet port of mouth spray, and the air inlet of admission line is located at cavity
Outside lid 3.So different gas enters through respective admission line, then by with each self-corresponding admittance area on mouth spray
Into reaction chamber so that the gas in reaction chamber is evenly distributed, so cause air inlet when reaction chamber in gas field distribution it is uniform.
Multiple mouth sprays are provided with every kind of admittance area.
Such as Fig. 4, mouth spray 11 is bar shaped seam in the present embodiment, and all bar shaped slits on the spray head are into array distribution.
In the present embodiment, spray head 4 for circle, be provided with the left side of spray head 4 and right side admittance area A,
Admittance area B and admittance area C, and it is symmetrical with the center line of the spray head 4, that is, there are three kinds, totally six admittance areas, this
All bar shapeds on six admittance areas are stitched with array distribution.With reference to Fig. 1 and Fig. 3, corresponding admission line just includes air inlet pipe
Road A（Label 8）, admission line B（Label 9）With admission line C（Label 10）.After A gases enter from admission line A, through air inlet
Air inlet on the A of region is vertically into reaction chamber；B gases hang down from after admission line B entrance through the air inlet on the B of admittance area
It is straight enter reaction chamber；C gases from after admission line C entrance, through the air inlet on the C of admittance area vertically into reaction chamber, so
A gases, B gases and C gases are just uniformly distributed with reaction chamber so that gas field distribution is uniform in reaction chamber.Admission line A,
Admission line B and admission line C have multiple.
Such as Fig. 2 and Fig. 5, cooling water channel 12 is provided with spray head 4, cooling water inlet pipe 13 and cold is provided with spray head 4
But water outlet pipe 14, the delivery port of cooling water inlet pipe 13 is connected with the water inlet of cooling water channel 12, the water inlet of cooling water inlet pipe 13
Through cavity lid and ft connection, the water inlet of cooling water outlet tube 14 is connected with the delivery port of cooling water channel 12, cooling water outlet tube
14 delivery port passes through cavity lid and ft connection.Cooling water inlet pipe 13 and cooling water outlet tube 14 have multiple, cooling water channel 12
With multiple.
Cooling water channel is set between two neighboring mouth spray on spray head, from Fig. 2, mouth spray 11 and cooling water channel
12 spray head the distribution that is arranged alternately in the radial direction.
In the present embodiment, the cross section of the air inlet port of mouth spray 11 is V-shaped, the cross section of the air outlet of mouth spray 11
In reverse V-shaped.
Such as Fig. 1 and Fig. 3, spray head 4 is connected to the inner side of cavity lid 3 by flange 16, and between spray head 4 and flange 16
Form cushion chamber 6.In the present embodiment, admission line B（Label 9）Gas outlet directly through cavity lid 3 and flange 16 and air inlet
Mouth spray connection on the B of region, admission line C（Label 10）Gas outlet directly through cavity lid 3 and flange 16 and air inlet area
Mouth spray connection on the C of domain, and the admittance area A on spray head（Label 8）Connect with cushion chamber 6 through cavity lid 3 and flange 16
Logical, the gas outlet of admission line A is connected by the cushion chamber with the mouth spray on the A of admittance area.Because admission line A corresponds to
The quantity of the mouth spray on the A of admittance area is more, and cushion chamber 6 is formed between spray head 4 and flange 16, can cause A gases
First spread uniform in cushion chamber 6, then entering reaction chamber.
Such as Fig. 1, the MOCVD device reaction cavity is also including air feeding in center pipeline 15, the outlet of the air feeding in center pipeline 15
Mouth is communicated after sequentially passing through cavity lid, shower tray with reaction chamber, and the air inlet of the air feeding in center pipeline stretches out cavity lid.
Gas cylinder 7 is provided with the edge lower surface of slide glass dish 5.
Mouth spray is circular hole in another embodiment, and all circular holes on spray head are in array distribution or circle distribution.
Specific embodiment above is only used to illustrate design of the invention, and one of ordinary skill in the art is in this hair
Various deformation and change can be made under bright design, these deformations and change are included within protection scope of the present invention.
Claims (7)
1. a kind of MOCVD device reaction cavity, it is characterised in that including：
Cavity wall, it forms reaction chamber；
Cavity lid, it is arranged at the top end opening of the reaction chamber；
Slide glass dish, its bottom for being arranged on the reaction chamber；
Spray head, its top for being arranged on the reaction chamber is provided with the spray head and enters the reaction for gas with various
Various admittance areas in chamber, are provided with mouth spray, the air outlet of the mouth spray and the reaction chamber on every kind of admittance area
Connection, the mouth spray is vertical with the slide glass dish；
Various admission lines, connect with corresponding admittance area respectively, and the gas outlet of admission line passes through the cavity lid and institute
The air inlet port connection of mouth spray is stated, the air inlet of the admission line is located at outside the cavity lid.
2. MOCVD device reaction cavity according to claim 1, it is characterised in that cooling is provided with the spray head
Water channel, is provided with cooling water outlet tube and cooling water inlet pipe on the spray head, the delivery port of the cooling water inlet pipe is cold with described
But the water inlet connection of water channel, the water inlet of the cooling water inlet pipe passes through the cavity lid and ft connection, the cooling water
The water inlet of outlet pipe is connected with the delivery port of the cooling water channel, the delivery port of the cooling water outlet tube through the cavity lid with
Ft connection.
3. MOCVD device reaction cavity according to claim 2, it is characterised in that set on every kind of admittance area
There are multiple mouth sprays.
4. MOCVD device reaction cavity according to claim 3, it is characterised in that the mouth spray is bar shaped seam, described
All bar shaped slits on spray head are into array distribution.
5. MOCVD device reaction cavity according to claim 3, it is characterised in that the mouth spray is circular hole, the spray
The all circular holes drenched on head form array distribution or circle distribution.
6. the MOCVD device reaction cavity according to claim 4 or 5, it is characterised in that on the spray head adjacent two
The cooling water channel is set between individual mouth spray.
7. MOCVD device reaction cavity according to claim 1, it is characterised in that the spray head is connected by flange
In the inner side of the cavity lid, and cushion chamber is formed between the spray head and the flange.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710203985.1A CN106929819A (en) | 2017-03-30 | 2017-03-30 | A kind of MOCVD device reaction cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710203985.1A CN106929819A (en) | 2017-03-30 | 2017-03-30 | A kind of MOCVD device reaction cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106929819A true CN106929819A (en) | 2017-07-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710203985.1A Pending CN106929819A (en) | 2017-03-30 | 2017-03-30 | A kind of MOCVD device reaction cavity |
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| Country | Link |
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| CN (1) | CN106929819A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111519161A (en) * | 2019-09-29 | 2020-08-11 | 江苏微导纳米科技股份有限公司 | Vacuum coating process chamber and vacuum suspension coating machine with same |
| CN114231948A (en) * | 2021-12-22 | 2022-03-25 | 南京原磊纳米材料有限公司 | Injection device for ALD (atomic layer deposition) equipment |
| CN115354304A (en) * | 2022-08-25 | 2022-11-18 | 拓荆科技(上海)有限公司 | Semiconductor reaction chamber |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
-
2017
- 2017-03-30 CN CN201710203985.1A patent/CN106929819A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111519161A (en) * | 2019-09-29 | 2020-08-11 | 江苏微导纳米科技股份有限公司 | Vacuum coating process chamber and vacuum suspension coating machine with same |
| CN114231948A (en) * | 2021-12-22 | 2022-03-25 | 南京原磊纳米材料有限公司 | Injection device for ALD (atomic layer deposition) equipment |
| CN114231948B (en) * | 2021-12-22 | 2024-05-10 | 南京原磊纳米材料有限公司 | Injection device for ALD equipment |
| CN115354304A (en) * | 2022-08-25 | 2022-11-18 | 拓荆科技(上海)有限公司 | Semiconductor reaction chamber |
| CN115354304B (en) * | 2022-08-25 | 2023-11-17 | 拓荆科技(上海)有限公司 | Semiconductor reaction cavity |
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Application publication date: 20170707 |