CN203690266U - Gas intake device of plasma etching equipment - Google Patents
Gas intake device of plasma etching equipment Download PDFInfo
- Publication number
- CN203690266U CN203690266U CN201320839171.4U CN201320839171U CN203690266U CN 203690266 U CN203690266 U CN 203690266U CN 201320839171 U CN201320839171 U CN 201320839171U CN 203690266 U CN203690266 U CN 203690266U
- Authority
- CN
- China
- Prior art keywords
- plasma etching
- etching equipment
- gas
- compression ring
- even compression
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 21
- 230000006835 compression Effects 0.000 claims description 29
- 238000007906 compression Methods 0.000 claims description 29
- 239000007921 spray Substances 0.000 claims description 27
- 238000005498 polishing Methods 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The utility model discloses a gas intake device of plasma etching equipment. The gas intake device of the plasma etching equipment comprises a plasma source chamber connected with the plasma etching equipment, and a hollow connecting piece of a reaction cavity. A gas evening ring is fixed in the connecting piece, and a notch is formed in the gas evening ring. Ports, on the two sides of the notch, of the gas evening ring are communicated with two ports of a tee joint fixed in the connecting piece. A third port of the tee joint is communicated with a gas intake pipe which is arranged on a gas intake opening and a gas outlet opening in the connecting piece in a communication mode, and a plurality of spraying holes are formed in the inner side wall of the gas evening ring. According to the gas intake device of the plasma etching equipment, evenness of the gas flow density at a large-size substrate can be greatly improved, and the plasma etching evenness is improved. The gas intake device of the plasma etching equipment is simple in structure, easy to manufacture and capable of being improved according to different application occasions so as to adapt to different requirements.
Description
Technical field
The utility model relates to the inlet duct in a kind of plasma-treating technology, is applicable to plasma etching, plasma ion assisted deposition, plasma clean equipment.
Background technology
In plasma-treating technology, the uniformity that process gas distributes at substrate surface is the precondition and guarantee of even etching.Traditionally, process gas is all directly to spray through an even flow plate by air inlet pipe, gas is the diffusion of mind-set surrounding from even flow plate, this inlet duct can meet the demands within the specific limits substantially for small size substrate, for large size substrate due to the decay of air-flow make substrate edge near gas density more and more lower, the uniformity variation of gas, thus the uniformity of plasma density cannot be guaranteed.Fig. 1 is shown in by tradition inlet duct schematic diagram.Because current semiconductor-based chip size is increasing, characteristic size is more and more less, and traditional inlet duct cannot meet the needs of technique.For this reason, in the urgent need to studying a kind of new inlet duct, solve process gas homogeneity question.
Summary of the invention
Technical problem to be solved in the utility model is, for prior art deficiency, provides a kind of plasma etching equipment inlet duct, solves the poor problem of intake uniformity in current plasma processes.
For solving the problems of the technologies described above, the technical scheme that the utility model adopts is: a kind of plasma etching equipment inlet duct, comprises and connect the plasma source chamber of plasma etching equipment and the hollow connector of reaction cavity; In described connector, be fixed with even compression ring; On described even compression ring, offer breach, the even compression ring port of described breach both sides is communicated with two ports that are fixed on the three-way connection in connector; The 3rd port of described three-way connection is communicated with the air inlet that is opened on described connector and gas outlet air inlet pipe with one is communicated with; On described even compression ring madial wall, offer multiple spray apertures.
Even compression ring of the present utility model adopts the interior polishing 316L stainless steel tube that diameter is 6～15mm to make, described even compression ring diameter is 250mm, described multiple spray apertures size is identical, each spray apertures diameter is 0.5 ~ 3mm, the spacing of adjacent two spray apertures is 1 ~ 5mm, and described multiple spray apertures are evenly distributed on described even compression ring madial wall; The size of the utility model to even compression ring, size, the spacing of spray apertures are optimized design, can greatly improve the uniformity of the air-flow of large size substrate processing.
The size of the each spray apertures of even compression ring can be identical, also can increase gradually or reduce according to actual conditions; The distribution of spray apertures can be equidistant, also can increase gradually or reduce according to actual conditions.
Described even compression ring is fixedly connected with described connector inwall by securing member.
Connector of the present utility model is flange.
Compared with prior art, the beneficial effect that the utility model has is: the gas of the even compression ring of the utility model is sprayed to center by surrounding, the gas density that from surrounding to center spray process, single spray apertures sprays out is more and more lower, but the gas Jiang center that each spray apertures sprays out is collected, thereby make up the deficiency that single spray apertures is decayed to center gas by surrounding, improved the gas density to center by surrounding; The utility model can improve the current density uniformity at large size substrate place greatly, thereby improves plasma etching uniformity; The utility model is simple in structure, is easy to manufacture, and can make improvements to adapt to different demands according to different application occasion.
Accompanying drawing explanation
Fig. 1 is traditional uniform flow inlet duct schematic diagram;
Fig. 2 is the utility model one embodiment vertical view;
Fig. 3 is the utility model one embodiment end view;
Fig. 4 is even compression ring structural representation.
Embodiment
As shown in Figure 2 to 4, the utility model one embodiment comprises the plasma source chamber 2 of connection plasma etching equipment and the hollow connector 4 of reaction cavity; In described connector, be fixed with even compression ring 1; On described even compression ring 1, offer breach 9, even compression ring 1 port of described breach 9 both sides is communicated with two ports that are fixed on the three-way connection 3 in connector 4; The 3rd port of described three-way connection 3 is communicated with the air inlet 7 that is opened on described connector 4 with one and the air inlet pipe 10 of gas outlet 8 is communicated with; On described even compression ring 1 madial wall, offer multiple spray apertures 6.
In the present embodiment, it is that the interior polishing 316L stainless steel tube of 6～15mm is made that even compression ring 1 adopts diameter, and described even compression ring 1 diameter is 250mm; Even compression ring 1 is fixedly connected with described connector 4 inwalls by securing member 5.
In the present embodiment, multiple spray apertures 6 sizes are identical, and each spray apertures 6 diameters are 0.5 ~ 3mm, and the spacing of adjacent two spray apertures is 1 ~ 5mm.
In the present embodiment, multiple spray apertures 6 are evenly distributed on described even compression ring 1 madial wall.
In the present embodiment, connector 4 is flange.
The process gas mixing enters into even compression ring by the air inlet pipe 10, the three-way connection 3 that are welded on flange, and air-flow sprays by spray apertures 6; The inlet duct that adopts the utility model embodiment to provide can obviously improve the uniformity of process gas in plasma reaction chamber, thereby improves the uniformity of plasma treatment.
Claims (6)
1. a plasma etching equipment inlet duct, comprises and connects the plasma source chamber (2) of plasma etching equipment and the hollow connector (4) of reaction cavity (6); It is characterized in that, in described connector, be fixed with even compression ring (1); On described even compression ring (1), offer breach (9), even compression ring (1) port of described breach (9) both sides is communicated with two ports that are fixed on the three-way connection (3) in connector (4); The 3rd port of described three-way connection (3) is communicated with the air inlet (7) that is opened on described connector (4) and gas outlet (8) air inlet pipe (10) with one is communicated with; On described even compression ring (1) madial wall, offer multiple spray apertures (6).
2. plasma etching equipment inlet duct according to claim 1, is characterized in that, described even compression ring (1) adopts the interior polishing 316L stainless steel tube that diameter is 6～15mm to make, and described even compression ring (1) diameter is 250mm.
3. plasma etching equipment inlet duct according to claim 1 and 2, is characterized in that, described even compression ring (1) is fixedly connected with described connector (4) inwall by securing member (5).
4. plasma etching equipment inlet duct according to claim 3, is characterized in that, described multiple spray apertures (6) size is identical, and each spray apertures (6) diameter is 0.5 ~ 3mm, and the spacing of adjacent two spray apertures is 1 ~ 5mm.
5. plasma etching equipment inlet duct according to claim 4, is characterized in that, described multiple spray apertures (6) are evenly distributed on described even compression ring (1) madial wall.
6. plasma etching equipment inlet duct according to claim 5, is characterized in that, described connector (4) is flange.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320839171.4U CN203690266U (en) | 2013-12-19 | 2013-12-19 | Gas intake device of plasma etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320839171.4U CN203690266U (en) | 2013-12-19 | 2013-12-19 | Gas intake device of plasma etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203690266U true CN203690266U (en) | 2014-07-02 |
Family
ID=51012138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320839171.4U Expired - Lifetime CN203690266U (en) | 2013-12-19 | 2013-12-19 | Gas intake device of plasma etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203690266U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730393A (en) * | 2013-12-19 | 2014-04-16 | 中国电子科技集团公司第四十八研究所 | Gas intake device of plasma etching equipment |
-
2013
- 2013-12-19 CN CN201320839171.4U patent/CN203690266U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730393A (en) * | 2013-12-19 | 2014-04-16 | 中国电子科技集团公司第四十八研究所 | Gas intake device of plasma etching equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140702 |