CN103715601B - 驱动装置和发光单元 - Google Patents

驱动装置和发光单元 Download PDF

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Publication number
CN103715601B
CN103715601B CN201310445806.7A CN201310445806A CN103715601B CN 103715601 B CN103715601 B CN 103715601B CN 201310445806 A CN201310445806 A CN 201310445806A CN 103715601 B CN103715601 B CN 103715601B
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China
Prior art keywords
current
voltage
light
circuit
driving
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CN201310445806.7A
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Chinese (zh)
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CN103715601A (zh
Inventor
大尾桂久
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837—Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
CN201310445806.7A 2012-10-04 2013-09-25 驱动装置和发光单元 Active CN103715601B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012222163A JP6328876B2 (ja) 2012-10-04 2012-10-04 駆動装置および発光装置
JP2012-222163 2012-10-04

Publications (2)

Publication Number Publication Date
CN103715601A CN103715601A (zh) 2014-04-09
CN103715601B true CN103715601B (zh) 2017-10-24

Family

ID=50408348

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310445806.7A Active CN103715601B (zh) 2012-10-04 2013-09-25 驱动装置和发光单元

Country Status (3)

Country Link
US (1) US8976827B2 (enExample)
JP (1) JP6328876B2 (enExample)
CN (1) CN103715601B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022127077A1 (zh) * 2020-12-16 2022-06-23 上海禾赛科技有限公司 激光雷达的发射端电路及检测其驱动电流的方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6429496B2 (ja) * 2014-05-23 2018-11-28 キヤノン株式会社 画像形成装置
JP2017098277A (ja) * 2015-11-18 2017-06-01 富士通株式会社 レーザ装置、光アンプ、光伝送装置および判定方法
US12009638B2 (en) 2018-11-16 2024-06-11 Sony Semiconductor Solutions Corporation Surface emission laser driving method and surface emission laser device
CN114088346B (zh) * 2021-11-29 2025-01-21 桂林聚联科技有限公司 一种光纤时延测量装置
JP7629888B2 (ja) 2022-04-18 2025-02-14 コーセル株式会社 電源装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW518825B (en) * 2000-10-05 2003-01-21 Benq Corp System to correct the resistance error due to IC process
CN101216901A (zh) * 2007-01-06 2008-07-09 株式会社半导体能源研究所 半导体器件
CN101689803A (zh) * 2007-11-02 2010-03-31 罗姆股份有限公司 电源装置
CN101859980A (zh) * 2009-04-13 2010-10-13 索尼公司 激光驱动器
CN102035134A (zh) * 2009-09-25 2011-04-27 索尼公司 校正电路、驱动电路、发光设备和校正电流脉冲波形的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713790A (en) 1980-06-30 1982-01-23 Canon Inc Output light intensity controller for laser array
JP4278922B2 (ja) * 2002-05-30 2009-06-17 パイオニア株式会社 パワーコントロール装置
JP4398331B2 (ja) * 2003-09-25 2010-01-13 パナソニック株式会社 レーザ駆動装置、光ディスク装置、レーザ駆動方法およびレーザ駆動用集積回路
JP4582199B2 (ja) * 2008-06-02 2010-11-17 ブラザー工業株式会社 光出力装置およびその装置を備えた画像形成装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW518825B (en) * 2000-10-05 2003-01-21 Benq Corp System to correct the resistance error due to IC process
CN101216901A (zh) * 2007-01-06 2008-07-09 株式会社半导体能源研究所 半导体器件
CN101689803A (zh) * 2007-11-02 2010-03-31 罗姆股份有限公司 电源装置
CN101859980A (zh) * 2009-04-13 2010-10-13 索尼公司 激光驱动器
CN102035134A (zh) * 2009-09-25 2011-04-27 索尼公司 校正电路、驱动电路、发光设备和校正电流脉冲波形的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022127077A1 (zh) * 2020-12-16 2022-06-23 上海禾赛科技有限公司 激光雷达的发射端电路及检测其驱动电流的方法

Also Published As

Publication number Publication date
JP6328876B2 (ja) 2018-05-23
US20140098832A1 (en) 2014-04-10
US8976827B2 (en) 2015-03-10
JP2014075479A (ja) 2014-04-24
CN103715601A (zh) 2014-04-09

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