JP6328876B2 - 駆動装置および発光装置 - Google Patents

駆動装置および発光装置 Download PDF

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Publication number
JP6328876B2
JP6328876B2 JP2012222163A JP2012222163A JP6328876B2 JP 6328876 B2 JP6328876 B2 JP 6328876B2 JP 2012222163 A JP2012222163 A JP 2012222163A JP 2012222163 A JP2012222163 A JP 2012222163A JP 6328876 B2 JP6328876 B2 JP 6328876B2
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Japan
Prior art keywords
current
voltage
light emitting
circuit
emitting element
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JP2012222163A
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English (en)
Japanese (ja)
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JP2014075479A5 (enExample
JP2014075479A (ja
Inventor
大尾　桂久
桂久 大尾
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012222163A priority Critical patent/JP6328876B2/ja
Priority to US14/030,274 priority patent/US8976827B2/en
Priority to CN201310445806.7A priority patent/CN103715601B/zh
Publication of JP2014075479A publication Critical patent/JP2014075479A/ja
Publication of JP2014075479A5 publication Critical patent/JP2014075479A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837—Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP2012222163A 2012-10-04 2012-10-04 駆動装置および発光装置 Active JP6328876B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012222163A JP6328876B2 (ja) 2012-10-04 2012-10-04 駆動装置および発光装置
US14/030,274 US8976827B2 (en) 2012-10-04 2013-09-18 Driving device and light-emitting unit
CN201310445806.7A CN103715601B (zh) 2012-10-04 2013-09-25 驱动装置和发光单元

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012222163A JP6328876B2 (ja) 2012-10-04 2012-10-04 駆動装置および発光装置

Publications (3)

Publication Number Publication Date
JP2014075479A JP2014075479A (ja) 2014-04-24
JP2014075479A5 JP2014075479A5 (enExample) 2015-04-09
JP6328876B2 true JP6328876B2 (ja) 2018-05-23

Family

ID=50408348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012222163A Active JP6328876B2 (ja) 2012-10-04 2012-10-04 駆動装置および発光装置

Country Status (3)

Country Link
US (1) US8976827B2 (enExample)
JP (1) JP6328876B2 (enExample)
CN (1) CN103715601B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6429496B2 (ja) * 2014-05-23 2018-11-28 キヤノン株式会社 画像形成装置
JP2017098277A (ja) * 2015-11-18 2017-06-01 富士通株式会社 レーザ装置、光アンプ、光伝送装置および判定方法
US12009638B2 (en) 2018-11-16 2024-06-11 Sony Semiconductor Solutions Corporation Surface emission laser driving method and surface emission laser device
CN114636989B (zh) * 2020-12-16 2023-02-24 上海禾赛科技有限公司 激光雷达的发射端电路及检测其驱动电流的方法
CN114088346B (zh) * 2021-11-29 2025-01-21 桂林聚联科技有限公司 一种光纤时延测量装置
JP7629888B2 (ja) 2022-04-18 2025-02-14 コーセル株式会社 電源装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713790A (en) 1980-06-30 1982-01-23 Canon Inc Output light intensity controller for laser array
TW518825B (en) * 2000-10-05 2003-01-21 Benq Corp System to correct the resistance error due to IC process
JP4278922B2 (ja) * 2002-05-30 2009-06-17 パイオニア株式会社 パワーコントロール装置
JP4398331B2 (ja) * 2003-09-25 2010-01-13 パナソニック株式会社 レーザ駆動装置、光ディスク装置、レーザ駆動方法およびレーザ駆動用集積回路
JP5179858B2 (ja) * 2007-01-06 2013-04-10 株式会社半導体エネルギー研究所 半導体装置
JP5118940B2 (ja) * 2007-11-02 2013-01-16 ローム株式会社 電源装置
JP4582199B2 (ja) * 2008-06-02 2010-11-17 ブラザー工業株式会社 光出力装置およびその装置を備えた画像形成装置
JP5509662B2 (ja) * 2009-04-13 2014-06-04 ソニー株式会社 レーザ駆動装置
JP5659476B2 (ja) * 2009-09-25 2015-01-28 ソニー株式会社 補正回路、駆動回路および発光装置

Also Published As

Publication number Publication date
US20140098832A1 (en) 2014-04-10
US8976827B2 (en) 2015-03-10
JP2014075479A (ja) 2014-04-24
CN103715601B (zh) 2017-10-24
CN103715601A (zh) 2014-04-09

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