CN103715284A - 可调带隙量子阱结构的柔性衬底太阳能电池及制备方法 - Google Patents
可调带隙量子阱结构的柔性衬底太阳能电池及制备方法 Download PDFInfo
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Abstract
本发明属于柔性太阳能电池制造技术领域,特别涉及一种可调带隙量子阱结构的柔性衬底太阳能电池及制备方法。本发明的太阳能电池具体结构是:Al电极/GZO/P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO/Al背电极/AlN/PI柔性衬底;其制备方法是首先磁控溅射制备AlN绝缘层和Al背电极,然后采用ECR-PEMOCVD依次沉积GZO基透明导电薄膜、N型nc-Si:H薄膜、InxGa1-xN量子阱本征晶体薄膜、P型nc-Si:H薄膜、GZO基透明导电薄膜,最后制备金属Al电极。本发明的可调带隙量子阱结构的柔性衬底太阳能电池具有优异的柔软性,重量轻,携带方便,具有产业化潜力和市场空间,而且制备工艺简单,能实现规模生产。
Description
技术领域
本发明属于柔性太阳能电池制造技术领域,特别涉及一种可调带隙量子阱结构的柔性衬底太阳能电池及制备方法。
背景技术
柔性衬底薄膜太阳能电池是指在柔性材料即聚酰亚胺(PI)或柔性不锈钢上制作的薄膜太阳能电池,由于其具有携带轻便、重量轻以及不易粉碎的优势,以及独特的使用特性,从而具有广阔的市场竞争力。目前已经商业化应用的薄膜太阳能电池以基于玻璃衬底的非晶硅薄膜为主,其制作方法是:使用硅烷(SiH4),同时掺杂硼烷(B2H6)和磷烷(PH3)等气体,在廉价的玻璃衬底上低温制备而成,形成光伏PIN单结或者多结薄膜太阳能电池结构。
目前,技术相对成熟的薄膜太阳能电池大多都是硅基材料,其PIN中的I层一般都是非晶或者微晶硅(Si)薄膜。非晶或者微晶硅(Si)薄膜又称无定型硅,就其微观结构来看,是短程有序但是长程无序的不规则网状结构,包含大量的悬挂键和空位等缺陷。但是由于非晶或者微晶硅(Si)薄膜带隙宽度在1.7eV左右,对太阳能辐射光谱的长波很不敏感,使其光电转化效率较低,而且还存在明显的光致衰退效应,使太阳能电池的光致性能稳定性较差,导致薄膜太阳能电池的市场竞争力较差。
发明内容
针对现有技术存在的问题,本发明提供一种可调带隙量子阱结构的柔性衬底太阳能电池及制备方法,通过采用带隙宽度可以调整到太阳能电池最敏感的区域的InxGa1-xN晶体薄膜作为柔性太阳能电池的本征层(I层),其量子阱结构提高了太阳能电池的光电转化效率和光致性能的稳定性。
本发明的可调带隙量子阱结构的柔性衬底太阳能电池,是以聚酰亚胺(PI)作为柔性衬底,衬底上是AlN绝缘层,AlN绝缘层上方是Al背电极,Al背电极上方是作为缓冲层的镓掺杂氧化锌(GZO)基导电薄膜,GZO基导电薄膜上方是N型氢化纳米晶硅(nc-Si:H)薄膜,N型nc-Si:H薄膜上方是I层本征InxGa1-xN薄膜,I层本征InxGa1-xN薄膜上方是P型nc- Si:H薄膜,P型nc- Si:H薄膜上方是GZO基导电薄膜,GZO基导电薄膜上方是Al金属电极;具体结构是:Al电极/GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底,其中I层本征InxGa1-xN薄膜的带隙宽度可调且具有量子阱结构。
本发明的可调带隙量子阱结构的柔性衬底太阳能电池的制备方法按照以下步骤进行:
(1)将PI衬底基片用去离子水超声波清洗5min后,用N2吹干送入磁控溅射反应室,在9.0×10-4 Pa真空的条件下,以金属铝为靶材,以Ar和N2混合气体作为反应源,Ar和N2流量比(4~10):1,将柔性PI衬底基片加热到100~200℃,沉积制备AlN绝缘层,沉积时间为30~60min;
(2)在磁控溅射制备中继续制备金属Al背电极,以金属铝为靶材,以氩气作为气体反应源,控制氩气流量为10~20sccm,衬底温度为50~150℃,沉积时间为3~10min,此时的结构是Al背电极/AlN绝缘层/ PI柔性衬底;
(3)采用电子回旋共振等离子增强有机物化学气相沉积系统(ECR-PEMOCVD),制备GZO基透明导电薄膜,将沉积有AlN绝缘层和Al背电极的柔性PI衬底基片于反应室内加热到200~400℃,向反应室中通入Ar携带的三甲基镓(TMGa)、二乙基锌(DEZn)和O2,TMGa、DEZn和O2的流量比为1:2:80,控制微波功率为650W,沉积气压为0.8~1.2Pa,沉积时间为10~20min,此时的结构是GZO基透明导电薄膜/Al背电极/AlN/ PI柔性衬底基片;
(4)继续采用ECR-PEMOCVD制备N型nc-Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的PH3,Ar稀释的SiH4流量为5~8sccm, H2稀释的PH3流量为为0.5~5sccm,H2流量为25~40sccm,控制沉积温度为250~350℃,微波功率为650W,沉积气压为0.8~1.2Pa,沉积时间为30~80min,此时的结构是N型nc-Si:H/GZO /Al背电极/AlN / PI柔性衬底基片;
(5)继续采用ECR-PEMOCVD制备带隙可调的InxGa1-xN量子阱本征晶体薄膜,向反应室中通入H2稀释的TMGa和三甲基铟(TMIn),TMGa和TMIn流量比为2:1, N2流量为80~120sccm,沉积温度为200~300℃,微波功率为650W,沉积气压为0.9~1.4Pa,沉积时间为40~60min,此时结构是I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN绝缘层/ PI柔性衬底基片;
(6)继续采用ECR-PEMOCVD制备P型nc- Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的B2H6,Ar稀释的SiH4流量为5~8sccm,为H2稀释的B2H6流量为0.3~8sccm,H2流量为25sccm,沉积温度为250℃~350℃,微波功率为650W,沉积气压为0.8Pa~1.2Pa,沉积时间为30~80min,此时结构是P型nc- Si:H/I层本征InxGa1-xN/N型nc-Si: GZO H/GZO Al背电极/AlN绝缘层/ PI柔性衬底基片;
(7)继续采用ECR-PEMOCVD制备GZO基透明导电薄膜,向反应室中通入Ar携带的TMGa、DEZn和O2,TMGa、DEZn和氧气O2的流量比为1:2:80,沉积温度为200~400℃,微波功率为650W,沉积气压为0.8~1.2Pa,沉积时间为10~20min,此时结构是GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片;
(8)最后采用磁控溅射反应室制备金属Al电极,以Ar作为气体反应源,以金属铝为靶材,Ar流量为10~20sccm,衬底温度为50~150℃,沉积时间为3~10min,最终得到结构为Al电极/GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片的太阳能柔性电池。
其中,所述的磁控溅射用金属铝靶材的纯度为99.99%。
所述的InxGa1-xN量子阱本征晶体薄膜,x在0~1间任意取值。
与现有技术相比,本发明的特点和有益效果是:
本发明的Al电极/GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片的太阳能柔性电池,所采用的柔性衬底为PI,此柔性太阳能电池最大的特点是重量轻、携带方便、不易粉碎,其重量比功率和体积比功率较其它种类的电池高几个数量级。具有很好的柔性,可以任意卷曲、裁剪和粘贴;本发明还改变了I层材料和结构,引入具有带隙可调的InxGa1-xN量子阱本征晶体薄膜作为I层,InxGa1-xN材料具有稳定好,耐腐蚀且具有隧穿势垒以及低的光损系数,提高了电池的转化效率;本发明还在Al背电极和N型Si基薄膜之间加入GZO透明导电薄膜,GZO一方面作为缓冲层,GZO另一方面作为透明导电电极,增加了薄膜太阳能电池的透光率同时提高了透明电极的耐腐蚀性能,使得薄膜太阳能电池的光电转换效率得到了很大的提高;本发明还采用AlN作为绝缘层,其晶格失配率相差很小,还制备出质量均匀的Al背电极。
综上,本发明的可调带隙量子阱结构的柔性衬底太阳能电池具有优异的柔软性,重量轻,携带方便,具有产业化潜力和市场空间,而且制备工艺简单,能实现规模生产。
附图说明
图1是本发明的可调带隙量子阱结构的柔性衬底太阳能电池的结构图;
图2是本发明的可调带隙量子阱结构的柔性衬底太阳能电池的制备流程图;
图3是本发明实施例1中的InxGa1-xN量子阱本征晶体薄膜的原子力显微镜(AFM)图片;
图4是本发明实施例1中的P型nc- Si:H薄膜的X射线光电子能谱分析(XPS)图;
图5是本发明实施例1中的P型nc- Si:H薄膜的Raman谱线;
图6是本发明实施例1中的P型nc- Si:H薄膜的的原子力显微镜(AFM)图片。
具体实施方式
下面对本发明的实施例作详细说明,但本发明的保护范围不限于下述的实施例。
本发明中采用 RENISHAW in Via Raman Microscope光谱仪测试沉积薄膜的Raman光谱,激光光源为632.8nm的Ne-He激光器,激光功率为35mW,分辨率为2μm;
本发明中XPS采用的是美国Thermo VG公司生产的型号为ESCALAB250的多功能表面分析系统。X射线源为Al靶Kα(1486.6eV)线;
实施例1
本实施例的可调带隙量子阱结构的柔性衬底太阳能电池的结构图如图1所示,制备方法是:
(1)将PI衬底基片用去离子水超声波清洗5min后,用N2吹干送入磁控溅射反应室,在9.0×10-4 Pa真空的条件下,以金属铝为靶材,金属铝的纯度为99.99%,以Ar和N2混合气体作为反应源,Ar和N2流量比6:1,将柔性PI衬底基片加热到100℃,沉积制备AlN绝缘层,沉积时间为30min;
(2)在磁控溅射制备中继续制备金属Al背电极,以氩气作为气体反应源,控制氩气流量为10sccm,衬底温度为50℃,沉积时间为3min,此时的结构是Al背电极/AlN绝缘层/ PI柔性衬底;
(3)采用ECR-PEMOCVD制备GZO基透明导电薄膜,将沉积有AlN绝缘层和Al背电极的柔性PI衬底基片于反应室内加热到200℃,向反应室中通入Ar携带的TMGa、二DEZn和O2,TMGa、DEZn和O2的流量比为1:2:80,控制微波功率为650W,沉积气压为0.8Pa,沉积时间为10min,此时的结构是GZO基透明导电薄膜/Al背电极/AlN/ PI柔性衬底基片;
(4)继续采用ECR-PEMOCVD制备N型nc-Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的PH3,Ar稀释的SiH4流量为5sccm, H2稀释的PH3流量为为0.5sccm,H2流量为25sccm,控制沉积温度为250℃,微波功率为650W,沉积气压为0.8Pa,沉积时间为30min,此时的结构是N型nc-Si:H/GZO /Al背电极/AlN / PI柔性衬底基片;
(5)继续采用ECR-PEMOCVD制备带隙可调的InxGa1-xN量子阱本征晶体薄膜,向反应室中通入H2稀释的TMGa和TMIn,TMGa和TMIn流量比为2:1, N2流量为80sccm,沉积温度为300℃,微波功率为650W,沉积气压为0.9Pa,沉积时间为40min,此时结构是I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN绝缘层/ PI柔性衬底基片;
采用原子力显微镜对InxGa1-xN量子阱本征晶体薄膜的形貌进行了测试分析,结果如图3所示,由图3可以看出InxGa1-xN量子阱本征晶体薄膜形貌很平整,晶粒分布很均匀;
(6)继续采用ECR-PEMOCVD制备P型nc- Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的B2H6,Ar稀释的SiH4流量为5sccm,为H2稀释的B2H6流量为0.3sccm,H2流量为25sccm,沉积温度为250℃,微波功率为650W,沉积气压为0.8~1.2Pa,沉积时间为30min,此时结构是P型nc- Si:H/I层本征InxGa1-xN/N型nc-Si: GZO H/GZO Al背电极/AlN绝缘层/ PI柔性衬底基片;
采用XPS分析设备对得到P型nc- Si:H薄膜进行测试分析,结果如图4所示,由图4可以看出P型nc- Si:H薄膜性能良好,继续采用Raman光谱仪对P型nc- Si:H薄膜的结构性能进行了测试分析,结果如图5所示,由图5可以看出P型nc- Si:H薄膜的结构性能良好,继续采用原子力显微镜对P型nc- Si:H薄膜的形貌进行了测试分析,结果如图6所示,由图6可以看出B掺杂P型Si薄膜形貌很平整,晶粒分布很均匀;
(7)继续采用ECR-PEMOCVD制备GZO基透明导电薄膜,向反应室中通入Ar携带的TMGa、DEZn和O2,TMGa、DEZn和氧气O2的流量比为1:2:80,沉积温度为200℃,微波功率为650W,沉积气压为0.8Pa,沉积时间为10min,此时结构是GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片;
(8)最后采用磁控溅射反应室制备金属Al电极,以Ar作为气体反应源,Ar流量为10sccm,衬底温度为50℃,沉积时间为3~10min,最终得到结构为Al电极/GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片的太阳能柔性电池。
实施例2
本实施例的可调带隙量子阱结构的柔性衬底太阳能电池的结构图如图1所示,制备方法是:
(1)将PI衬底基片用去离子水超声波清洗5min后,用N2吹干送入磁控溅射反应室,在9.0×10-4 Pa真空的条件下,以金属铝为靶材,金属铝的纯度为99.99%,以Ar和N2混合气体作为反应源,Ar和N2流量比7:1,将柔性PI衬底基片加热到120℃,沉积制备AlN绝缘层,沉积时间为40min;
(2)在磁控溅射制备中继续制备金属Al背电极,以氩气作为气体反应源,控制氩气流量为15sccm,衬底温度为100℃,沉积时间为6min,此时的结构是Al背电极/AlN绝缘层/ PI柔性衬底;
(3)采用ECR-PEMOCVD制备GZO基透明导电薄膜,将沉积有AlN绝缘层和Al背电极的柔性PI衬底基片于反应室内加热到280℃,向反应室中通入Ar携带的TMGa、二DEZn和O2,TMGa、DEZn和O2的流量比为1:2:80,控制微波功率为650W,沉积气压为1.0Pa,沉积时间为15min,此时的结构是GZO基透明导电薄膜/Al背电极/AlN/ PI柔性衬底基片;
(4)继续采用ECR-PEMOCVD制备N型nc-Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的PH3,Ar稀释的SiH4流量为6sccm, H2稀释的PH3流量为为2sccm,H2流量为30sccm,控制沉积温度为300℃,微波功率为650W,沉积气压为1.2Pa,沉积时间为40min,此时的结构是N型nc-Si:H/GZO /Al背电极/AlN / PI柔性衬底基片;
(5)继续采用ECR-PEMOCVD制备带隙可调的InxGa1-xN量子阱本征晶体薄膜,向反应室中通入H2稀释的TMGa和TMIn,TMGa和TMIn流量比为2:1, N2流量为90sccm,沉积温度为240℃,微波功率为650W,沉积气压为1.0Pa,沉积时间为50min,此时结构是I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN绝缘层/ PI柔性衬底基片;
(6)继续采用ECR-PEMOCVD制备P型nc- Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的B2H6,Ar稀释的SiH4流量为6sccm,为H2稀释的B2H6流量为2sccm,H2流量为25sccm,沉积温度为300℃,微波功率为650W,沉积气压为1.0Pa,沉积时间为50min,此时结构是P型nc- Si:H/I层本征InxGa1-xN/N型nc-Si: GZO H/GZO Al背电极/AlN绝缘层/ PI柔性衬底基片;
(7)继续采用ECR-PEMOCVD制备GZO基透明导电薄膜,向反应室中通入Ar携带的TMGa、DEZn和O2,TMGa、DEZn和氧气O2的流量比为1:2:80,沉积温度为250℃,微波功率为650W,沉积气压为1.1Pa,沉积时间为15min,此时结构是GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片;
(8)最后采用磁控溅射反应室制备金属Al电极,以Ar作为气体反应源,Ar流量为12sccm,衬底温度为100℃,沉积时间为5min,最终得到结构为Al电极/GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片的太阳能柔性电池。
实施例3
本实施例的可调带隙量子阱结构的柔性衬底太阳能电池的结构图如图1所示,制备方法是:
(1)将PI衬底基片用去离子水超声波清洗5min后,用N2吹干送入磁控溅射反应室,在9.0×10-4 Pa真空的条件下,以金属铝为靶材,金属铝的纯度为99.99%,以Ar和N2混合气体作为反应源,Ar和N2流量比9:1,将柔性PI衬底基片加热到200℃,沉积制备AlN绝缘层,沉积时间为60min;
(2)在磁控溅射制备中继续制备金属Al背电极,以氩气作为气体反应源,控制氩气流量为20sccm,衬底温度为150℃,沉积时间为10min,此时的结构是Al背电极/AlN绝缘层/ PI柔性衬底;
(3)采用ECR-PEMOCVD制备GZO基透明导电薄膜,将沉积有AlN绝缘层和Al背电极的柔性PI衬底基片于反应室内加热到280℃,向反应室中通入Ar携带的TMGa、二DEZn和O2,TMGa、DEZn和O2的流量比为1:2:80,控制微波功率为650W,沉积气压为1.2Pa,沉积时间为20min,此时的结构是GZO基透明导电薄膜/Al背电极/AlN/ PI柔性衬底基片;
(4)继续采用ECR-PEMOCVD制备N型nc-Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的PH3,Ar稀释的SiH4流量为8sccm, H2稀释的PH3流量为为5sccm,H2流量为40sccm,控制沉积温度为350℃,微波功率为650W,沉积气压为1.0Pa,沉积时间为80min,此时的结构是N型nc-Si:H/GZO /Al背电极/AlN / PI柔性衬底基片;
(5)继续采用ECR-PEMOCVD制备带隙可调的InxGa1-xN量子阱本征晶体薄膜,向反应室中通入H2稀释的TMGa和TMIn,TMGa和TMIn流量比为2:1, N2流量为120sccm,沉积温度为200℃,微波功率为650W,沉积气压为1.4Pa,沉积时间为60min,此时结构是I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN绝缘层/ PI柔性衬底基片;
(6)继续采用ECR-PEMOCVD制备P型nc- Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的B2H6,Ar稀释的SiH4流量为8sccm,为H2稀释的B2H6流量为8sccm,H2流量为25sccm,沉积温度为350℃,微波功率为650W,沉积气压为1.2Pa,沉积时间为80min,此时结构是P型nc- Si:H/I层本征InxGa1-xN/N型nc-Si: GZO H/GZO Al背电极/AlN绝缘层/ PI柔性衬底基片;
(7)继续采用ECR-PEMOCVD制备GZO基透明导电薄膜,向反应室中通入Ar携带的TMGa、DEZn和O2,TMGa、DEZn和氧气O2的流量比为1:2:80,沉积温度为400℃,微波功率为650W,沉积气压为1.2Pa,沉积时间为20min,此时结构是GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片;
(8)最后采用磁控溅射反应室制备金属Al电极,以Ar作为气体反应源,Ar流量为20sccm,衬底温度为150℃,沉积时间为10min,最终得到结构为Al电极/GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片的太阳能柔性电池。
实施例4
本实施例的可调带隙量子阱结构的柔性衬底太阳能电池的结构图如图1所示,制备方法是:
(1)将PI衬底基片用去离子水超声波清洗5min后,用N2吹干送入磁控溅射反应室,在9.0×10-4 Pa真空的条件下,以金属铝为靶材,金属铝的纯度为99.99%,以Ar和N2混合气体作为反应源,Ar和N2流量比4:1,将柔性PI衬底基片加热到180℃,沉积制备AlN绝缘层,沉积时间为50min;
(2)在磁控溅射制备中继续制备金属Al背电极,以氩气作为气体反应源,控制氩气流量为12sccm,衬底温度为80℃,沉积时间为4min,此时的结构是Al背电极/AlN绝缘层/ PI柔性衬底;
(3)采用ECR-PEMOCVD制备GZO基透明导电薄膜,将沉积有AlN绝缘层和Al背电极的柔性PI衬底基片于反应室内加热到250℃,向反应室中通入Ar携带的TMGa、二DEZn和O2,TMGa、DEZn和O2的流量比为1:2:80,控制微波功率为650W,沉积气压为0.9Pa,沉积时间为18min,此时的结构是GZO基透明导电薄膜/Al背电极/AlN/ PI柔性衬底基片;
(4)继续采用ECR-PEMOCVD制备N型nc-Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的PH3,Ar稀释的SiH4流量为6sccm, H2稀释的PH3流量为为1sccm,H2流量为25sccm,控制沉积温度为320℃,微波功率为650W,沉积气压为1.0Pa,沉积时间为80min,此时的结构是N型nc-Si:H/GZO /Al背电极/AlN / PI柔性衬底基片;
(5)继续采用ECR-PEMOCVD制备带隙可调的InxGa1-xN量子阱本征晶体薄膜,向反应室中通入H2稀释的TMGa和TMIn,TMGa和TMIn流量比为2:1, N2流量为115sccm,沉积温度为240℃,微波功率为650W,沉积气压为1.0Pa,沉积时间为55min,此时结构是I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN绝缘层/ PI柔性衬底基片;
(6)继续采用ECR-PEMOCVD制备P型nc- Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的B2H6,Ar稀释的SiH4流量为7sccm,为H2稀释的B2H6流量为4sccm,H2流量为25sccm,沉积温度为260℃,微波功率为650W,沉积气压为1.2Pa,沉积时间为50min,此时结构是P型nc- Si:H/I层本征InxGa1-xN/N型nc-Si: GZO H/GZO Al背电极/AlN绝缘层/ PI柔性衬底基片;
(7)继续采用ECR-PEMOCVD制备GZO基透明导电薄膜,向反应室中通入Ar携带的TMGa、DEZn和O2,TMGa、DEZn和氧气O2的流量比为1:2:80,沉积温度为290℃,微波功率为650W,沉积气压为1.1Pa,沉积时间为14min,此时结构是GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片;
(8)最后采用磁控溅射反应室制备金属Al电极,以Ar作为气体反应源,Ar流量为20sccm,衬底温度为110℃,沉积时间为9min,最终得到结构为Al电极/GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片的太阳能柔性电池。
实施例5
本实施例的可调带隙量子阱结构的柔性衬底太阳能电池的结构图如图1所示,制备方法是:
(1)将PI衬底基片用去离子水超声波清洗5min后,用N2吹干送入磁控溅射反应室,在9.0×10-4 Pa真空的条件下,以金属铝为靶材,金属铝的纯度为99.99%,以Ar和N2混合气体作为反应源,Ar和N2流量比10:1,将柔性PI衬底基片加热到120℃,沉积制备AlN绝缘层,沉积时间为30min;
(2)在磁控溅射制备中继续制备金属Al背电极,以氩气作为气体反应源,控制氩气流量为15sccm,衬底温度为50℃,沉积时间为10min,此时的结构是Al背电极/AlN绝缘层/ PI柔性衬底;
(3)采用ECR-PEMOCVD制备GZO基透明导电薄膜,将沉积有AlN绝缘层和Al背电极的柔性PI衬底基片于反应室内加热到300℃,向反应室中通入Ar携带的TMGa、二DEZn和O2,TMGa、DEZn和O2的流量比为1:2:80,控制微波功率为650W,沉积气压为1.2Pa,沉积时间为20min,此时的结构是GZO基透明导电薄膜/Al背电极/AlN/ PI柔性衬底基片;
(4)继续采用ECR-PEMOCVD制备N型nc-Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的PH3,Ar稀释的SiH4流量为5.5sccm, H2稀释的PH3流量为为3sccm,H2流量为25sccm,控制沉积温度为320℃,微波功率为650W,沉积气压为0.8Pa,沉积时间为80min,此时的结构是N型nc-Si:H/GZO /Al背电极/AlN / PI柔性衬底基片;
(5)继续采用ECR-PEMOCVD制备带隙可调的InxGa1-xN量子阱本征晶体薄膜,向反应室中通入H2稀释的TMGa和TMIn,TMGa和TMIn流量比为2:1, N2流量为80sccm,沉积温度为200℃,微波功率为650W,沉积气压为1.4Pa,沉积时间为45min,此时结构是I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN绝缘层/ PI柔性衬底基片;
(6)继续采用ECR-PEMOCVD制备P型nc- Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的B2H6,Ar稀释的SiH4流量为5sccm,为H2稀释的B2H6流量为2sccm,H2流量为25sccm,沉积温度为250℃,微波功率为650W,沉积气压为0.8Pa,沉积时间为50min,此时结构是P型nc- Si:H/I层本征InxGa1-xN/N型nc-Si: GZO H/GZO Al背电极/AlN绝缘层/ PI柔性衬底基片;
(7)继续采用ECR-PEMOCVD制备GZO基透明导电薄膜,向反应室中通入Ar携带的TMGa、DEZn和O2,TMGa、DEZn和氧气O2的流量比为1:2:80,沉积温度为250℃,微波功率为650W,沉积气压为1.1Pa,沉积时间为10min,此时结构是GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片;
(8)最后采用磁控溅射反应室制备金属Al电极,以Ar作为气体反应源,Ar流量为20sccm,衬底温度为150℃,沉积时间为5min,最终得到结构为Al电极/GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片的太阳能柔性电池。
Claims (4)
1.一种可调带隙量子阱结构的柔性衬底太阳能电池,其特征在于是以PI作为柔性衬底,衬底上是AlN绝缘层,AlN绝缘层上方是Al背电极,Al背电极上方是作为缓冲层的GZO基导电薄膜,GZO基导电薄膜上方是N型nc-Si:H薄膜,N型nc-Si:H薄膜上方是I层本征InxGa1-xN薄膜,I层本征InxGa1-xN薄膜上方是P型nc- Si:H薄膜,P型nc- Si:H薄膜上方是GZO基导电薄膜,GZO基导电薄膜上方是Al金属电极;具体结构是:Al电极/GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底,其中I层本征InxGa1-xN薄膜的带隙宽度可调且具有量子阱结构。
2.根据权利要求1所述的一种可调带隙量子阱结构的柔性衬底太阳能电池,其特征在于所述的InxGa1-xN量子阱本征晶体薄膜,x在0~1间任意取值。
3.一种如权利要求1所述的可调带隙量子阱结构的柔性衬底太阳能电池的制备方法,其特征在于按照以下步骤进行:
(1)将PI衬底基片用去离子水超声波清洗后,用N2吹干送入磁控溅射反应室,在9.0×10-4 Pa真空的条件下,以金属铝为靶材,以Ar和N2混合气体作为反应源,Ar和N2流量比(4~10):1,将柔性PI衬底基片加热到100~200℃,沉积制备AlN绝缘层,沉积时间为30~60min;
(2)在磁控溅射制备中继续制备金属Al背电极,以Ar作为气体反应源,以金属铝为靶材,控制氩气流量为10~20sccm,衬底温度为50~150℃,沉积时间为3~10min,此时的结构是Al背电极/AlN绝缘层/ PI柔性衬底;
(3)采用ECR-PEMOCVD制备GZO基透明导电薄膜,将沉积有AlN绝缘层和Al背电极的柔性PI衬底基片于反应室内加热到200~400℃,向反应室中通入Ar携带的三甲基镓(TMGa)、二乙基锌(DEZn)和O2,TMGa、DEZn和O2的流量比为1:2:80,控制微波功率为650W,沉积气压为0.8~1.2Pa,沉积时间为10~20min,此时的结构是GZO基透明导电薄膜/Al背电极/AlN/ PI柔性衬底基片;
(4)继续采用ECR-PEMOCVD制备N型nc-Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的PH3,Ar稀释的SiH4流量为5~8sccm, H2稀释的PH3流量为为0.5~5sccm,H2流量为25~40sccm,控制沉积温度为250~350℃,微波功率为650W,沉积气压为0.8~1.2Pa,沉积时间为30~80min,此时的结构是N型nc-Si:H/GZO /Al背电极/AlN / PI柔性衬底基片;
(5)继续采用ECR-PEMOCVD制备带隙可调的InxGa1-xN量子阱本征晶体薄膜,向反应室中通入H2稀释的TMGa和三甲基铟(TMIn),TMGa和TMIn流量比为2:1, N2流量为80~120sccm,沉积温度为200~300℃,微波功率为650W,沉积气压为0.9~1.4Pa,沉积时间为40~60min,此时结构是I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN绝缘层/ PI柔性衬底基片;
(6)继续采用ECR-PEMOCVD制备P型nc- Si:H薄膜,向反应室中通入Ar稀释的SiH4以及H2稀释的B2H6,Ar稀释的SiH4流量为5~8sccm,为H2稀释的B2H6流量为0.3~8sccm,H2流量为25sccm,沉积温度为250℃~350℃,微波功率为650W,沉积气压为0.8Pa~1.2Pa,沉积时间为30~80min,此时结构是P型nc- Si:H/I层本征InxGa1-xN/N型nc-Si: GZO H/GZO Al背电极/AlN绝缘层/ PI柔性衬底基片;
(7)继续采用ECR-PEMOCVD制备GZO基透明导电薄膜,向反应室中通入Ar携带的TMGa、DEZn和O2,TMGa、DEZn和氧气O2的流量比为1:2:80,沉积温度为200~400℃,微波功率为650W,沉积气压为0.8~1.2Pa,沉积时间为10~20min,此时结构是GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片;
(8)最后采用磁控溅射反应室制备金属Al电极,以Ar作为气体反应源,以金属铝为靶材,Ar流量为10~20sccm,衬底温度为50~150℃,沉积时间为3~10min,最终得到结构为Al电极/GZO /P型nc-Si:H/I层本征InxGa1-xN/N型nc-Si:H/GZO /Al背电极/AlN/ PI柔性衬底基片的太阳能柔性电池。
4. 根据权利要求3所述的一种可调带隙量子阱结构的柔性衬底太阳能电池的制备方法,其特征在于所述的磁控溅射用金属铝靶材的纯度为99.99%。
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CN105185861A (zh) * | 2015-08-05 | 2015-12-23 | 辽宁恒华航海电力设备工程有限公司 | 一种玻璃结构薄膜太阳能电池及制备方法 |
CN108010989A (zh) * | 2017-11-10 | 2018-05-08 | 深圳先进技术研究院 | 柔性太阳能电池及其制备方法 |
CN112186062A (zh) * | 2020-09-11 | 2021-01-05 | 隆基绿能科技股份有限公司 | 一种太阳能电池及其制作方法 |
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