CN103715233B - 一种具有高维持电压的ldmos结构的esd保护器件 - Google Patents
一种具有高维持电压的ldmos结构的esd保护器件 Download PDFInfo
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- CN103715233B CN103715233B CN201410011734.XA CN201410011734A CN103715233B CN 103715233 B CN103715233 B CN 103715233B CN 201410011734 A CN201410011734 A CN 201410011734A CN 103715233 B CN103715233 B CN 103715233B
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- trap
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- 238000012423 maintenance Methods 0.000 title claims abstract description 23
- 230000001681 protective effect Effects 0.000 title claims abstract description 20
- 238000002347 injection Methods 0.000 claims abstract description 60
- 239000007924 injection Substances 0.000 claims abstract description 60
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 49
- 239000001301 oxygen Substances 0.000 claims abstract description 49
- 238000002955 isolation Methods 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 25
- 229920005591 polysilicon Polymers 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000926 separation method Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 9
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 230000036039 immunity Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410011734.XA CN103715233B (zh) | 2014-01-10 | 2014-01-10 | 一种具有高维持电压的ldmos结构的esd保护器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410011734.XA CN103715233B (zh) | 2014-01-10 | 2014-01-10 | 一种具有高维持电压的ldmos结构的esd保护器件 |
Publications (2)
Publication Number | Publication Date |
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CN103715233A CN103715233A (zh) | 2014-04-09 |
CN103715233B true CN103715233B (zh) | 2016-08-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201410011734.XA Active CN103715233B (zh) | 2014-01-10 | 2014-01-10 | 一种具有高维持电压的ldmos结构的esd保护器件 |
Country Status (1)
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CN (1) | CN103715233B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409457B (zh) * | 2014-12-11 | 2017-02-01 | 江南大学 | 一种ldmos‑scr类叉指结构的高压esd保护器件 |
US9543292B2 (en) * | 2015-02-27 | 2017-01-10 | Alpha And Omega Semiconductor Incorporated | Field effect transistor with integrated Zener diode |
CN106373956A (zh) * | 2015-07-21 | 2017-02-01 | 三垦电气株式会社 | 半导体装置以及包含该半导体装置的电子设备 |
CN105374814A (zh) * | 2015-10-14 | 2016-03-02 | 东南大学 | 一种高鲁棒性的高压静电放电保护器件 |
CN107946296A (zh) * | 2017-10-23 | 2018-04-20 | 深圳震有科技股份有限公司 | 一种静电保护用lemds_scr器件 |
CN108336085B (zh) * | 2018-03-21 | 2023-12-19 | 湖南静芯微电子技术有限公司 | 一种栅极嵌入小岛式可控硅静电防护器件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1681122A (zh) * | 2004-04-06 | 2005-10-12 | 世界先进积体电路股份有限公司 | 具有间隙结构的高压静电放电保护装置 |
CN203659868U (zh) * | 2014-01-10 | 2014-06-18 | 江南大学 | 一种具有高维持电压的ldmos结构的esd保护器件 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7420252B2 (en) * | 2006-01-20 | 2008-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | LDMOS device with improved ESD performance |
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2014
- 2014-01-10 CN CN201410011734.XA patent/CN103715233B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1681122A (zh) * | 2004-04-06 | 2005-10-12 | 世界先进积体电路股份有限公司 | 具有间隙结构的高压静电放电保护装置 |
CN203659868U (zh) * | 2014-01-10 | 2014-06-18 | 江南大学 | 一种具有高维持电压的ldmos结构的esd保护器件 |
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CN103715233A (zh) | 2014-04-09 |
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Effective date of registration: 20200810 Address after: Room 213, second floor, scientific research building, Dongtinghu Road, Gaoyou Economic Development Zone, Yangzhou City, Jiangsu Province Patentee after: Yangzhou Guanke Technology Co.,Ltd. Address before: 1302, 13 / F, no.6, Zhongguancun South Street, Haidian District, Beijing 100086 Patentee before: BEIJING ZHITAO SCIENCE & TECHNOLOGY Co.,Ltd. Effective date of registration: 20200810 Address after: 1302, 13 / F, no.6, Zhongguancun South Street, Haidian District, Beijing 100086 Patentee after: BEIJING ZHITAO SCIENCE & TECHNOLOGY Co.,Ltd. Address before: No. 1800 road 214122 Jiangsu Lihu Binhu District City of Wuxi Province Patentee before: Jiangnan University |
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Effective date of registration: 20240410 Address after: 225000, Building 3-1, South Side of Bosideng Avenue, Gaoyou Economic Development Zone (Mapeng Street), Yangzhou City, Jiangsu Province Patentee after: Jiangsu Xinfengshang Advanced Materials Technology Co.,Ltd. Country or region after: China Address before: Room 213, 2nd floor, scientific research building, Dongtinghu Road, Gaoyou Economic Development Zone, Yangzhou City, Jiangsu Province, 225603 Patentee before: Yangzhou Guanke Technology Co.,Ltd. Country or region before: China |