CN103706907A - 半导体装置的制造方法、半导体装置 - Google Patents

半导体装置的制造方法、半导体装置 Download PDF

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CN103706907A
CN103706907A CN201310263265.6A CN201310263265A CN103706907A CN 103706907 A CN103706907 A CN 103706907A CN 201310263265 A CN201310263265 A CN 201310263265A CN 103706907 A CN103706907 A CN 103706907A
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semiconductor device
solder flux
semiconductor chip
solder
manufacture method
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板桥龙也
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Abstract

本发明提供半导体装置的制造方法、半导体装置。半导体装置将接合后与焊接层一起形成树脂层的焊膏用于半导体芯片的接合中而得到高可信性。如图2的（a）的放大图所示，虽然形成有气泡（100），但气泡（100）难以在焊剂（51）中移动，而是停留在其内部。因此，抑制了构成焊剂（51）的树脂材料飞散。粘度调整剂混合于焊剂（51）中，以使此时的焊剂（51）的粘度约为90～150Pa·s。然后通过固化步骤使焊剂（51）也完全硬化。此时，如图2的（b）所示，在该固化处理时，焊剂（51）硬化的同时收缩，焊剂（51）中的气泡（100）被除去。

Description

半导体装置的制造方法、半导体装置
技术领域
本发明涉及具有在金属板上接合有半导体芯片的结构的半导体装置的制造方法。
背景技术
一般而言，在使用半导体芯片时，形成为具有如下结构的半导体装置：在金属板上搭载有半导体芯片的结构被封装到绝缘性塑模树脂层中，作为端子的引线从塑模树脂层导出。
图3是从上面观察该半导体装置的一个例子的透视图。这里，在作为横长的矩形体形状的塑模树脂层91中，设有两个芯片垫（金属板）。在该结构中，半导体芯片92搭载于芯片垫93，半导体芯片94搭载于芯片垫95。引线96在上侧、下侧分别具有4根，设置为从塑模树脂层91导出。为了使这些构成期望的电路，引线96中的一部分与邻接的芯片垫93、95一体化，其他的引线96与芯片垫93、95绝缘。半导体芯片92、94中的电极、芯片垫93、95、各引线96之间利用细的焊线（bonding wire）97进行连接。焊线97也被封装在塑模树脂层91中。例如，可以采用功率半导体芯片作为半导体芯片92，采用对该功率半导体芯片进行控制的控制IC芯片作为半导体芯片94。
这里，半导体芯片92、94大多利用焊料分别接合于芯片垫93、95。在该情况下，若在半导体芯片92、94的背面形成电极，则该电极与芯片垫93、95之间的电接合以及半导体芯片92、94的固定都可以利用该焊料来进行。在该半导体装置的动作中半导体芯片92、94发热。半导体芯片92、94与芯片垫93、95之间在热膨胀率方面存在差异，因此在使用该半导体装置时，在半导体芯片92、94与芯片垫93、95之间产生因热膨胀率的差异引起的应力。因此，在该半导体装置中，耐久性相对于冷热循环来说就成了问题，在利用该焊料进行的接合中要求该相对于冷热循环的耐久性。
为了利用该焊料进行接合，大多采用焊料膏。作为该焊料膏，采用由成为焊料主要成分的金属（合金）构成的粒子（金属粒子）混合在树脂材料（焊剂（flux））中而成的材料。该焊料膏以与接合的半导体芯片92、94相应的图案通过例如丝网印刷形成于金属板上。之后，在半导体芯片搭载在其上之后进行加热，金属粒子熔化之后进行固化，由此进行了接合。此时，金属粒子熔化之后适度扩散后固化，由此进行了良好的接合。焊剂是为了成为能够涂布金属粒子的状态而混合的。但还起到如下等作用：在接合时除去金属粒子或金属板表面的氧化膜、活化金属板表面而提高对焊料膏的润湿性。因此，焊剂对强化焊料的接合也是有效的。
专利文献1中记载了如下技术：利用热硬化树脂（环氧树脂等）作为焊剂，利用在焊剂中混合有金属（焊料）粒子和由金属层覆盖的树脂填充粉末的焊料膏。图4是示意地示出在利用这种焊料膏的情况下包含接合（芯片焊接步骤）后的半导体芯片92（94）与芯片垫93（95）之间的接合部的结构的剖视图。通过利用该焊料膏，在半导体芯片92（94）与芯片垫93（95）之间形成由焊料构成的接合层（焊料接合）98，且覆盖该接合层98的周围，作为焊剂主要成分的环氧树脂硬化而形成树脂层99。在该情况下，由于树脂层99的机械强度也高，因此利用接合层98和树脂层99两者来接合半导体芯片92（94）和芯片垫93（95）。
这样半导体芯片92（94）和芯片垫93（95）接合之后，如图3所示，利用焊线97连接半导体芯片92（94）中的电极间或者它们与引线96之间，然后将该结构密封在塑模树脂层91中，由此，能够得到图3结构的半导体装置。此时，接合层98的周围被树脂层99加固，得到特别牢固的接合强度，因此能够在该半导体装置中得到相对于冷热循环的高耐久性。
专利文献1：日本特开2006-35259号公报
但是，在该结构中，实际上存在树脂层99引起的问题。图5是示意地示出图4的结构中形成的树脂层99的实际状况的剖视图。这里，在接合前的状态中，由于在金属粒子和树脂填充粉末间形成空隙，因此特别是在树脂层99中形成大量气泡100。在树脂层99硬化前的状态下，气泡100在树脂层99中移动，当气泡100到达树脂层99的表面时，有时气泡100破裂，构成树脂层99的树脂材料成为未硬化的树脂材料片101而向周围飞散。此时，该树脂材料片101飞散到例如往后应连接焊线97的引线96或半导体芯片92（94）的表面时，有时会给焊线97的接合带来不好影响。因此，有时半导体装置的可信性降低。
即，将接合后与焊接层一起形成树脂层的焊膏用于半导体芯片的接合中是难以得到有高可信性的半导体装置的。
发明内容
本发明正是鉴于上述问题而完成的，其目的在于提供解决上述问题的发明。
本发明为了解决上述课题，形成了下面揭示的结构。
本发明的半导体装置的制造方法，使焊料膏介于半导体芯片与金属板之间来接合所述半导体芯片和所述金属板，该制造方法的特征在于，所述焊料膏包含85%质量百分比～90%质量百分比（wt%）的金属粒子、作为焊剂的环氧树脂、具有活化效果的硬化剂、活化剂和粘度调整剂，该粘度调整剂提高硬化前的所述焊剂中的粘度，该制造方法具有：芯片焊接步骤，在通过所述焊料膏接合所述半导体芯片和所述金属板后，未硬化的所述焊剂以将气泡保持在内部的状态覆盖焊料接合的外周侧面和所述半导体芯片的外周侧面中的至少一部分；和固化步骤，在以比所述环氧树脂的硬化温度低10℃～40℃的温度保持结构体而使所述焊剂硬化的同时，从所述焊剂的内部除去所述气泡，其中，该结构体是通过所述焊膏接合所述半导体芯片和所述金属板而得到的。
本发明的半导体装置的制造方法中，其特征在于，所述粘度调整剂包含聚丙二醇和聚酯多元醇中的至少任意一种。
本发明的半导体装置的制造方法的特征在于，在所述芯片焊接步骤之后且所述固化步骤之前，使所述焊剂的粘度在90Pa·s～150Pa·s的范围内。
本发明的半导体装置的特征在于，该半导体装置是通过所述半导体装置的制造方法来制造的。
本发明如上所述那样构成，因此能够将接合后与焊接层一起形成树脂层的焊膏用于半导体芯片的接合中而得到有高可信性的半导体装置。
附图说明
图1是表示本发明实施方式涉及的半导体装置的制造方法的步骤剖视图。
图2是示意地表示在本发明实施方式涉及的半导体装置的制造方法中接合紧后（a）和固化步骤（b）中的焊剂的状态的图。
图3是一般的半导体装置的结构的透视图。
图4是示意表示现有半导体装置的制造方法中的芯片焊接步骤紧后的形态的剖视图。
图5是示意表示现有半导体装置的制造方法中的芯片焊接步骤紧后的焊剂的状态的图。
符号说明
10、92、94：半导体芯片；20、93、95：金属板（芯片垫）；50：焊料膏；51：焊剂（树脂材料）；52：金属粒子（焊料粉末）；53、98：接合层（焊料接合）；91：塑模树脂层；96：引线；97：焊线；99：树脂层；100：气泡；101：树脂材料片。
具体实施方式
以下，对作为本发明实施方式的半导体装置的制造方法进行说明。图1是表示通过该制造方法制造的半导体装置的步骤剖视图。这里所示的是半导体芯片10接合于金属板（芯片垫）20时（芯片焊接步骤）的截面。该接合是利用焊料膏50进行的。而且，实际上，如图3所示，在该接合之后，执行如下等步骤来制造半导体装置：通过对半导体芯片10、金属板20连接焊线，将连接了焊线之后的整个结构封装在塑模树脂层中。在这些步骤中，与通常所知的技术相同，因此省略说明。下面仅对芯片焊接步骤进行说明。图1是表示芯片焊接步骤中的形态的步骤剖视图。
在芯片焊接步骤中，首先如图1（a）所示，通过丝网印刷等方法将焊料膏50构图并涂布在金属板20上。焊料膏50构成为在焊剂（树脂材料）51中混合分散有作为焊料的金属粒子（焊料粉末）52。焊剂51在焊料膏50中的含量例如约为13.5质量%。焊剂51由例如树脂（环氧树脂，液状双酚A型），具有活性硬化的硬化剂（酐），溶剂（乙二醇类），触变剂（胺类），活化剂（有机酸），粘度调整剂构成。
作为粘度调整剂，利用聚丙二醇、聚酯多元醇或它们的混合物。粘度调整剂为了调整接合后形成接合层而树脂层未硬化的状态中的树脂层的粘度而添加的。由此，焊料膏50的粘度在涂布的状态下例如约为50Pa·s。
金属粒子52例如由银（Ag）-铜（Cu）-锡（Sn）合金构成，例如可以使用以Sn为主要成分、Ag和Cu分别约为3质量%和0.5质量%的材料。其平均粒径约为25～45μm。金属粒子52在焊料膏50中的组成约为85～90wt%。
在涂布完焊料膏50紧后的状态下，焊剂51处于未硬化的状态，具有适度的粘度，因此焊料膏50能够维持图1的（a）中的形状。而且，此时的焊料膏50的平面形状与所接合的半导体芯片10的平面形状大致相等。由此，能够接合半导体芯片10的整个下表面。
下面，如图1的（b）所示，在该状态下，将半导体芯片10搭载到焊料膏50之上。利用焊料膏50（焊剂51）的粘度维持该状态。
然后，将该半导体芯片10、焊料膏50、金属板20的层叠结构（结构体）投入回流焊炉中进行热处理。由此，焊料膏50中的金属粒子52熔化之后固化，进行半导体芯片10与金属板20之间的接合。在该热处理中，从常温升温到超过金属粒子52的熔点的最高温度，金属粒子52熔化并熔合后被冷却，金属再次固化而形成接合层53。
在该热处理中，在从常温加热到达到金属粒子52的熔点的过程中，进行焊剂51中的有机溶剂的气化、焊剂51的活化、焊剂51的金属粒子52或金属板20表面的氧化物的除去。此外，由于焊剂51的活化提高，构成焊剂51的环氧树脂润湿扩散。此时，处于比其熔点低的温度，因此金属粒子52的形态不变化。因此，在该热处理中，温度达到金属粒子52的熔点紧前的形态如图1的（c）所示那样。这里，焊剂51润湿扩散，包围半导体芯片10的周围。
然后，温度超过金属粒子52的熔点之后，金属粒子52熔化并熔合，冷却并固化，形成接合层（焊料接合）53，成为常温。此时的形态如图1的（d）所示那样。即，虽然形成了接合层53，但图1的（c）的状态和焊剂51的形状不变化。
这里，在上述的热处理中，环氧树脂（焊剂51）被置于比其硬化温度高的温度之下。但是，为使环氧树脂的架桥反应完全结束需要时间，因此在该热处理中，超过硬化温度的时间短时，在图1的（d）的状态下，焊剂51未硬化。通常使环氧树脂（焊剂51）成为实用的硬度、即完全硬化，需要1个小时以上的长时间的热处理。因此，在图1的（d）的状态下，焊剂51为未硬化的状态。此时，如图5所示，焊剂51中形成有气泡100。
但是，在上述的焊剂51中，由于添加了粘度调整剂而提高了其粘度，因此如图2的（a）其放大图所示，虽然形成有气泡100，但气泡100难以在焊剂51中移动，而是停留在其内部。因此，抑制了构成焊剂51的树脂材料飞散。粘度调整剂混合于焊剂51中，以使此时的焊剂51的粘度约为90～150Pa·s。
然后，通过在比环氧树脂的硬化温度（180℃）低10～40℃的温度例如150℃下进行长时间（约5个小时）的固化处理（固化步骤），焊剂51也完全硬化。此时，如图2的（b）所示，该固化处理时，为使焊剂51硬化的同时收缩，除去焊剂51中的气泡100。但是，与图5的情形不同，在该时刻，进行了焊剂51的硬化，因此树脂材料片不飞散。因此，与图5的情形不同，对焊线的连接等未产生不良影响。
即，在该焊料膏50中，通过粘度调整剂提高接合紧后的焊剂51的粘度，成为在接合紧后的状态下气泡维持在焊剂51中的状态，在之后的固化步骤中，焊剂51完全硬化的同时除去该气泡100。
例如可知，使用的环氧树脂（焊剂51）的硬化温度低，即使处于接合紧后步骤（形成接合层53紧后）焊剂51的硬化充分进行的状态，气泡也难以移动，树脂材料片难以飞散，这是很显然的。但是，在该情况下，在这之后即使进行固化步骤也难以除去气泡。对此，在上述的焊料膏中，接合紧后的状态下焊剂51未硬化，但其粘度得到提高，由此抑制了气泡的移动，通过这之后的固化步骤使焊剂51完全硬化，由此能够除去气泡。
此时，为了充分提高接合的可信性，优选焊剂51覆盖半导体芯片10的侧面的2/3以上。
然后，如图3所示，通过形成塑模树脂层，能够得到半导体装置。塑模树脂层能够通过压铸模等形成。
另外，还可知，即使在焊剂、金属粒子的组成与上述例子不同的情况下，如要具有同样特性、例如焊剂的硬化温度或金属粒子的熔点关系、接合紧后的焊剂的粘度等相等时，就能获得同样的效果，这是显然的。

Claims (4)

1.一种半导体装置的制造方法，使焊料膏介于半导体芯片与金属板之间来接合所述半导体芯片和所述金属板，
该制造方法的特征在于，
所述焊料膏包含85%质量百分比～90%质量百分比的金属粒子、作为焊剂的环氧树脂、具有活化效果的硬化剂、活化剂和粘度调整剂，该粘度调整剂提高硬化前的所述焊剂的粘度，
该制造方法具有：
芯片焊接步骤，在通过所述焊料膏接合所述半导体芯片和所述金属板后，未硬化的所述焊剂以将气泡保持在内部的状态覆盖焊料接合的外周侧面和所述半导体芯片的外周侧面中的至少一部分；和
固化步骤，在以比所述环氧树脂的硬化温度低10℃～40℃的温度保持结构体而使所述焊剂硬化的同时，从所述焊剂的内部除去所述气泡，其中，该结构体是通过所述焊膏接合所述半导体芯片和所述金属板而得到的。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，
所述粘度调整剂包含聚丙二醇和聚酯多元醇的至少任意一种。
3.根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
在所述芯片焊接步骤之后且所述固化步骤之前，使所述焊剂的粘度处于90Pa·s～150Pa·s的范围内。
4.一种半导体装置，其特征在于，
该半导体装置是通过权利要求1至权利要求3中的任意一项所述的半导体装置的制造方法来制造的。
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CN109079269A (zh) * 2018-09-19 2018-12-25 中国振华集团永光电子有限公司（国营第八七三厂） 一种半导体功率模块钎焊排气结构及钎焊工艺

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