CN103650170B - 异质结光电池的处理方法 - Google Patents

异质结光电池的处理方法 Download PDF

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CN103650170B
CN103650170B CN201280031297.7A CN201280031297A CN103650170B CN 103650170 B CN103650170 B CN 103650170B CN 201280031297 A CN201280031297 A CN 201280031297A CN 103650170 B CN103650170 B CN 103650170B
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handling process
layer
equal
heating
cell
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CN103650170A (zh
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萨穆埃尔·哈里森
皮埃尔-让·里贝隆
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Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/134—Irradiation with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
CN201280031297.7A 2011-06-27 2012-06-25 异质结光电池的处理方法 Active CN103650170B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1155716A FR2977079B1 (fr) 2011-06-27 2011-06-27 Procede de traitement de cellules photovoltaiques a heterojonction pour ameliorer et stabiliser leur rendement
FR1155716 2011-06-27
PCT/IB2012/053204 WO2013001440A1 (fr) 2011-06-27 2012-06-25 Procédé de traitement d'une cellule photovoltaïque a hétérojonction

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CN103650170A CN103650170A (zh) 2014-03-19
CN103650170B true CN103650170B (zh) 2017-05-03

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US (1) US20150013758A1 (enExample)
EP (1) EP2724385B1 (enExample)
JP (1) JP6302405B2 (enExample)
KR (1) KR102033800B1 (enExample)
CN (1) CN103650170B (enExample)
BR (1) BR112013033490A2 (enExample)
FR (1) FR2977079B1 (enExample)
IN (1) IN2014MN00015A (enExample)
WO (1) WO2013001440A1 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US11588071B2 (en) 2018-10-24 2023-02-21 Newsouth Innovations Pty Limited Method for improving the performance of a heterojunction solar cell

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SG11201407270XA (en) * 2012-05-21 2014-12-30 Newsouth Innovations Pty Ltd Advanced hydrogenation of silicon solar cells
CN103199143B (zh) * 2013-04-28 2016-06-29 常州天合光能有限公司 N型掺氢晶化硅钝化的异质结太阳能电池器件
DE112013005591C5 (de) * 2013-06-26 2018-10-04 Universität Konstanz Verfahren und Vorrichtung zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad
KR102230171B1 (ko) * 2013-07-26 2021-03-22 뉴사우스 이노베이션즈 피티와이 리미티드 실리콘에서의 열처리
CN103730532A (zh) * 2014-01-10 2014-04-16 常州天合光能有限公司 掺氢晶化硅钝化的异质结太阳能电池
FR3020501B1 (fr) * 2014-04-25 2017-09-15 Commissariat Energie Atomique Procede et equipement de traitement d'un precurseur d'une cellule photovoltaique a heterojonction et procede associe de fabrication d'une cellule photovoltaique
KR101569415B1 (ko) 2014-06-09 2015-11-16 엘지전자 주식회사 태양 전지의 제조 방법
FR3030116A1 (fr) * 2014-12-16 2016-06-17 Commissariat Energie Atomique Dispositif photovoltaique dote d'une couche conductrice et transparente a base de nanofils et procede de fabrication d'un tel dispositif
JP6430468B2 (ja) 2015-12-18 2018-11-28 エルジー エレクトロニクス インコーポレイティド 太陽電池の製造方法
CN108604619A (zh) * 2016-02-22 2018-09-28 应用材料意大利有限公司 用于处理太阳能电池基板的设备、用于处理太阳能电池基板的系统和用于处理太阳能电池基板的方法
CN108091726A (zh) * 2017-12-11 2018-05-29 浙江晶科能源有限公司 一种n型硅太阳能电池的热激活处理方法
CN110556449A (zh) * 2018-05-30 2019-12-10 福建钜能电力有限公司 一种长期保持异质结太阳电池和组件性能的装置及方法
DE102019111061A1 (de) 2019-04-29 2020-10-29 Meyer Burger (Germany) Gmbh Herstellungsverfahren von Silizium-Heterojunction-Solarzellen mit Stabilisierungsschritt und Fertigungslinienabschnitt für den Stabilisierungsschritt
FR3099294B1 (fr) 2019-07-26 2021-07-30 Commissariat Energie Atomique Procédé de traitement d’un precurseur de cellule photovoltaïque a hétérojonction
CN110518095B (zh) * 2019-08-29 2021-08-10 国家电投集团科学技术研究院有限公司 硅异质结太阳电池的光处理方法
CN111564532B (zh) * 2020-04-03 2023-02-17 江西昌大高新能源材料技术有限公司 一种hac太阳电池后处理增效设备及方法
MA66593B1 (fr) 2020-07-24 2024-07-31 Commissariat à l'Energie Atomique et aux Energies Alternatives Procédé de traitement par balayage d'une cellule photovoltaïque à hétérojonction
FR3112899B1 (fr) 2020-07-24 2022-07-22 Commissariat Energie Atomique Procédé de traitement par balayage continu d’une cellule photovoltaïque a hétérojonction
FR3112892B1 (fr) 2020-07-24 2022-07-22 Commissariat Energie Atomique Procédé de traitement par balayage interrompu d’une cellule photovoltaïque a hétérojonction
FR3113190B1 (fr) 2020-07-29 2023-01-13 Commissariat Energie Atomique Procédé de traitement d'un précurseur de cellule photovoltaïque à hétérojonction
FR3117674B1 (fr) 2020-12-11 2022-12-02 Commissariat Energie Atomique Procédé de détermination d’une température d’échauffement d’une cellule photovoltaïque a hétérojonction lors d’un procédé de traitement
FR3120474B1 (fr) 2021-03-08 2024-02-16 Commissariat Energie Atomique Procédé et système de traitement d'un empilement destiné à la fabrication d'une cellule photovoltaïque à hétérojonction
GB202119066D0 (en) 2021-12-29 2022-02-09 Rec Solar Pte Ltd Methods of treatment & manufacture of a solar cell
CN114613882B (zh) * 2022-03-11 2023-12-22 安徽华晟新能源科技有限公司 一种异质结电池的处理方法
FR3134654B1 (fr) 2022-04-15 2024-03-01 Commissariat Energie Atomique Système de traitement d'un module photovoltaïque pour augmenter son rendement
CN116435206A (zh) * 2023-04-12 2023-07-14 通威太阳能（安徽）有限公司 异质结太阳电池的性能测试方法
CN116634823A (zh) * 2023-07-08 2023-08-22 深圳黑晶光电技术有限公司 一种制备钝化层的方法及晶硅/钙钛矿叠层太阳能电池
FR3161064A1 (fr) 2024-04-08 2025-10-10 Commissariat A L' Energie Atomique Et Aux Energies Alternatives Procédé de traitement pour augmenter le rendement d’une cellule photovoltaïque

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Publication number Priority date Publication date Assignee Title
US11588071B2 (en) 2018-10-24 2023-02-21 Newsouth Innovations Pty Limited Method for improving the performance of a heterojunction solar cell

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Publication number Publication date
US20150013758A1 (en) 2015-01-15
FR2977079B1 (fr) 2013-07-26
EP2724385B1 (fr) 2019-08-21
KR20140044372A (ko) 2014-04-14
JP2014523125A (ja) 2014-09-08
IN2014MN00015A (enExample) 2015-06-12
WO2013001440A1 (fr) 2013-01-03
EP2724385A1 (fr) 2014-04-30
CN103650170A (zh) 2014-03-19
FR2977079A1 (fr) 2012-12-28
BR112013033490A2 (pt) 2017-01-24
KR102033800B1 (ko) 2019-10-17
JP6302405B2 (ja) 2018-03-28

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