BR112013033490A2 - processo de tratamento de um célula fotovoltaica com heterojunção - Google Patents
processo de tratamento de um célula fotovoltaica com heterojunçãoInfo
- Publication number
- BR112013033490A2 BR112013033490A2 BR112013033490A BR112013033490A BR112013033490A2 BR 112013033490 A2 BR112013033490 A2 BR 112013033490A2 BR 112013033490 A BR112013033490 A BR 112013033490A BR 112013033490 A BR112013033490 A BR 112013033490A BR 112013033490 A2 BR112013033490 A2 BR 112013033490A2
- Authority
- BR
- Brazil
- Prior art keywords
- treating
- photovoltaic cell
- heterojunction photovoltaic
- heterojunction
- cell
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/215—Geometries of grid contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1155716A FR2977079B1 (fr) | 2011-06-27 | 2011-06-27 | Procede de traitement de cellules photovoltaiques a heterojonction pour ameliorer et stabiliser leur rendement |
| PCT/IB2012/053204 WO2013001440A1 (fr) | 2011-06-27 | 2012-06-25 | Procédé de traitement d'une cellule photovoltaïque a hétérojonction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR112013033490A2 true BR112013033490A2 (pt) | 2017-01-24 |
Family
ID=46598888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112013033490A BR112013033490A2 (pt) | 2011-06-27 | 2012-06-25 | processo de tratamento de um célula fotovoltaica com heterojunção |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20150013758A1 (enExample) |
| EP (1) | EP2724385B1 (enExample) |
| JP (1) | JP6302405B2 (enExample) |
| KR (1) | KR102033800B1 (enExample) |
| CN (1) | CN103650170B (enExample) |
| BR (1) | BR112013033490A2 (enExample) |
| FR (1) | FR2977079B1 (enExample) |
| IN (1) | IN2014MN00015A (enExample) |
| WO (1) | WO2013001440A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2013266009B2 (en) | 2012-05-21 | 2017-02-16 | Newsouth Innovations Pty Limited | Advanced hydrogenation of silicon solar cells |
| CN103199143B (zh) * | 2013-04-28 | 2016-06-29 | 常州天合光能有限公司 | N型掺氢晶化硅钝化的异质结太阳能电池器件 |
| CN105340085B (zh) * | 2013-06-26 | 2018-07-06 | 康斯坦茨大学 | 用于生产具有稳定效率的光伏元件的方法和设备 |
| EP3025377B1 (en) * | 2013-07-26 | 2020-04-01 | NewSouth Innovations Pty Limited | Thermal processing in silicon |
| CN103730532A (zh) * | 2014-01-10 | 2014-04-16 | 常州天合光能有限公司 | 掺氢晶化硅钝化的异质结太阳能电池 |
| FR3020501B1 (fr) * | 2014-04-25 | 2017-09-15 | Commissariat Energie Atomique | Procede et equipement de traitement d'un precurseur d'une cellule photovoltaique a heterojonction et procede associe de fabrication d'une cellule photovoltaique |
| KR101569415B1 (ko) * | 2014-06-09 | 2015-11-16 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
| FR3030116A1 (fr) * | 2014-12-16 | 2016-06-17 | Commissariat Energie Atomique | Dispositif photovoltaique dote d'une couche conductrice et transparente a base de nanofils et procede de fabrication d'un tel dispositif |
| JP6430468B2 (ja) | 2015-12-18 | 2018-11-28 | エルジー エレクトロニクス インコーポレイティド | 太陽電池の製造方法 |
| CN108604619A (zh) * | 2016-02-22 | 2018-09-28 | 应用材料意大利有限公司 | 用于处理太阳能电池基板的设备、用于处理太阳能电池基板的系统和用于处理太阳能电池基板的方法 |
| CN108091726A (zh) * | 2017-12-11 | 2018-05-29 | 浙江晶科能源有限公司 | 一种n型硅太阳能电池的热激活处理方法 |
| CN110556449A (zh) * | 2018-05-30 | 2019-12-10 | 福建钜能电力有限公司 | 一种长期保持异质结太阳电池和组件性能的装置及方法 |
| US11588071B2 (en) | 2018-10-24 | 2023-02-21 | Newsouth Innovations Pty Limited | Method for improving the performance of a heterojunction solar cell |
| DE102019111061A1 (de) | 2019-04-29 | 2020-10-29 | Meyer Burger (Germany) Gmbh | Herstellungsverfahren von Silizium-Heterojunction-Solarzellen mit Stabilisierungsschritt und Fertigungslinienabschnitt für den Stabilisierungsschritt |
| FR3099294B1 (fr) | 2019-07-26 | 2021-07-30 | Commissariat Energie Atomique | Procédé de traitement d’un precurseur de cellule photovoltaïque a hétérojonction |
| CN110518095B (zh) * | 2019-08-29 | 2021-08-10 | 国家电投集团科学技术研究院有限公司 | 硅异质结太阳电池的光处理方法 |
| CN111564532B (zh) * | 2020-04-03 | 2023-02-17 | 江西昌大高新能源材料技术有限公司 | 一种hac太阳电池后处理增效设备及方法 |
| FR3112892B1 (fr) | 2020-07-24 | 2022-07-22 | Commissariat Energie Atomique | Procédé de traitement par balayage interrompu d’une cellule photovoltaïque a hétérojonction |
| FR3112899B1 (fr) | 2020-07-24 | 2022-07-22 | Commissariat Energie Atomique | Procédé de traitement par balayage continu d’une cellule photovoltaïque a hétérojonction |
| MA66593B1 (fr) | 2020-07-24 | 2024-07-31 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Procédé de traitement par balayage d'une cellule photovoltaïque à hétérojonction |
| FR3113190B1 (fr) | 2020-07-29 | 2023-01-13 | Commissariat Energie Atomique | Procédé de traitement d'un précurseur de cellule photovoltaïque à hétérojonction |
| FR3117674B1 (fr) | 2020-12-11 | 2022-12-02 | Commissariat Energie Atomique | Procédé de détermination d’une température d’échauffement d’une cellule photovoltaïque a hétérojonction lors d’un procédé de traitement |
| FR3120474B1 (fr) | 2021-03-08 | 2024-02-16 | Commissariat Energie Atomique | Procédé et système de traitement d'un empilement destiné à la fabrication d'une cellule photovoltaïque à hétérojonction |
| GB202119066D0 (en) | 2021-12-29 | 2022-02-09 | Rec Solar Pte Ltd | Methods of treatment & manufacture of a solar cell |
| CN114613882B (zh) * | 2022-03-11 | 2023-12-22 | 安徽华晟新能源科技有限公司 | 一种异质结电池的处理方法 |
| FR3134654B1 (fr) | 2022-04-15 | 2024-03-01 | Commissariat Energie Atomique | Système de traitement d'un module photovoltaïque pour augmenter son rendement |
| CN116634823A (zh) * | 2023-07-08 | 2023-08-22 | 深圳黑晶光电技术有限公司 | 一种制备钝化层的方法及晶硅/钙钛矿叠层太阳能电池 |
| FR3161064A1 (fr) | 2024-04-08 | 2025-10-10 | Commissariat A L' Energie Atomique Et Aux Energies Alternatives | Procédé de traitement pour augmenter le rendement d’une cellule photovoltaïque |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005093855A1 (ja) * | 2004-03-29 | 2005-10-06 | Kyocera Corporation | 太陽電池モジュール及びこれを用いた太陽光発電装置 |
| DE602005022299D1 (de) * | 2004-03-31 | 2010-08-26 | Sanyo Electric Co | Verfahren zur herstellung einer solarzelle |
| US9408742B2 (en) * | 2005-02-08 | 2016-08-09 | Koninklijke Philips N.V. | Glossopexy adjustment system and method |
| JP2007294830A (ja) * | 2005-06-16 | 2007-11-08 | Sanyo Electric Co Ltd | 太陽電池モジュールの製造方法 |
| DE102006012920B3 (de) * | 2006-03-21 | 2008-01-24 | Universität Konstanz | Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad |
| EP1973167B1 (en) * | 2007-03-19 | 2018-06-13 | Panasonic Intellectual Property Management Co., Ltd. | Photovoltaic device and method of manufacturing the same |
| CN101866991A (zh) * | 2010-05-26 | 2010-10-20 | 广东志成冠军集团有限公司 | 非晶硅/晶硅异质结太阳能电池制备方法 |
| CN102064216A (zh) * | 2010-11-22 | 2011-05-18 | 晶澳（扬州）太阳能科技有限公司 | 一种新型晶体硅太阳电池及其制作方法 |
-
2011
- 2011-06-27 FR FR1155716A patent/FR2977079B1/fr active Active
-
2012
- 2012-06-25 US US14/129,362 patent/US20150013758A1/en not_active Abandoned
- 2012-06-25 EP EP12741094.2A patent/EP2724385B1/fr active Active
- 2012-06-25 IN IN15MUN2014 patent/IN2014MN00015A/en unknown
- 2012-06-25 WO PCT/IB2012/053204 patent/WO2013001440A1/fr not_active Ceased
- 2012-06-25 KR KR1020147001588A patent/KR102033800B1/ko active Active
- 2012-06-25 CN CN201280031297.7A patent/CN103650170B/zh active Active
- 2012-06-25 JP JP2014518013A patent/JP6302405B2/ja active Active
- 2012-06-25 BR BR112013033490A patent/BR112013033490A2/pt not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JP6302405B2 (ja) | 2018-03-28 |
| EP2724385B1 (fr) | 2019-08-21 |
| JP2014523125A (ja) | 2014-09-08 |
| FR2977079B1 (fr) | 2013-07-26 |
| CN103650170A (zh) | 2014-03-19 |
| IN2014MN00015A (enExample) | 2015-06-12 |
| KR102033800B1 (ko) | 2019-10-17 |
| KR20140044372A (ko) | 2014-04-14 |
| WO2013001440A1 (fr) | 2013-01-03 |
| CN103650170B (zh) | 2017-05-03 |
| US20150013758A1 (en) | 2015-01-15 |
| EP2724385A1 (fr) | 2014-04-30 |
| FR2977079A1 (fr) | 2012-12-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B11A | Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing | ||
| B11Y | Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette] |