SG11201407270XA - Advanced hydrogenation of silicon solar cells - Google Patents

Advanced hydrogenation of silicon solar cells

Info

Publication number
SG11201407270XA
SG11201407270XA SG11201407270XA SG11201407270XA SG11201407270XA SG 11201407270X A SG11201407270X A SG 11201407270XA SG 11201407270X A SG11201407270X A SG 11201407270XA SG 11201407270X A SG11201407270X A SG 11201407270XA SG 11201407270X A SG11201407270X A SG 11201407270XA
Authority
SG
Singapore
Prior art keywords
new south
south wales
street
silicon
international
Prior art date
Application number
SG11201407270XA
Inventor
Stuart Ross Wenham
Phillip George Hamer
Brett Jason Hallam
Adeline Sugianto
Catherine Emily Chan
Lihui Song
Pei-Hsuan Lu
Alison Maree Wenham
Ly Mai
Chee Mun Chong
Guangqi Xu
Matthew Bruce Edwards
Original Assignee
Newsouth Innovations Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2012902090A external-priority patent/AU2012902090A0/en
Application filed by Newsouth Innovations Pty Ltd filed Critical Newsouth Innovations Pty Ltd
Publication of SG11201407270XA publication Critical patent/SG11201407270XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 28 November 2013 (28.11.2013) WIPOIPCT (10) International Publication Number WO 2013/173867 A1 (51) International Patent Classification: H01L 31/18 (2006.01) H01L 31/036 (2006.01) H01L 21/30 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/AU2013/000528 20 May 2013 (20.05.2013) English English (30) Priority Data: 2012902090 21 May 2012 (21.05.2012) AU (71) Applicant: NEWSOUTH INNOVATIONS PTY LIM­ ITED [AU/AU]; Rupert Myers Building, Level 2, Gate 14, Barker Street, UNSW, Sydney, New South Wales 2052 (AU). (72) Inventors: WENHAM, Stuart Ross; 19 Sturt Road, Cronulla, New South Wales 2230 (AU). HAMER, Phillip George; 7/4 la Anzac Parade, Kensington, New South Wales 2033 (AU). HALLAM, Brett Jason; 36A Washing­ ton Street, Bexley, New South Wales 2207 (AU). SUGI- ANTO, Adeline; 22 Lucas Avenue, Malabar, New South Wales 2036 (AU). CHAN, Catherine Emily; 5/47 Gilder- thorpe Avenue, Randwick, New South Wales 2031 (AU). SONG, Lihui; 285 Botany Street, Randwick, New South Wales 2031 (AU). LU, Pei-Hsuan; 6/18 Market Street, Rockdale, New South Wales 2122 (AU). WENHAM, Al­ ison Maree; 19 Sturt Road, Cronulla, New South Wales 2230 (AU). MAI, Ly; 32 Woods Road, Sefton, New South Wales 2162 (AU). CHONG, Chee Mun; 1/1-3 Cooper Park Road, Bellevue Hill, New South Wales 2023 (AU). XU, GuangQi; Unit 15, 6-8 Church Street, Randwick, New South Wales 2031 (AU). EDWARDS, Matthew Bruce; 7 Wesley Street, Elanora Heights, New South Wales 2101 (AU). (74) Agent: FB RICE; Level 23, 44 Market Street, Sydney, New South Wales 2000 (AU). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) l> 00 m i> i-H cn i-H o CJ o & (54) Title: ADVANCED HYDROGENATION OF SILICON SOLAR CELLS (57) Abstract: A method of hydrogenation of silicon photovoltaic a junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junc­ tion. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1 x 10 20 atoms/cm 3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1 x 10 19 atoms/cm or 3 less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40°C while simultaneously illu - minating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12eV) is at least 20mW/cm . 2
SG11201407270XA 2012-05-21 2013-05-20 Advanced hydrogenation of silicon solar cells SG11201407270XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2012902090A AU2012902090A0 (en) 2012-05-21 Advanced Hydrogenation of Silicon Solar Cells
PCT/AU2013/000528 WO2013173867A1 (en) 2012-05-21 2013-05-20 Advanced hydrogenation of silicon solar cells

Publications (1)

Publication Number Publication Date
SG11201407270XA true SG11201407270XA (en) 2014-12-30

Family

ID=49622933

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407270XA SG11201407270XA (en) 2012-05-21 2013-05-20 Advanced hydrogenation of silicon solar cells

Country Status (8)

Country Link
US (3) US9190556B2 (en)
EP (2) EP2852986B1 (en)
KR (1) KR102102873B1 (en)
CN (3) CN104701419A (en)
AU (1) AU2013266009B2 (en)
SG (1) SG11201407270XA (en)
TW (1) TWI601302B (en)
WO (1) WO2013173867A1 (en)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2852986B1 (en) * 2012-05-21 2019-06-26 NewSouth Innovations Pty Limited Advanced hydrogenation of silicon solar cells
DE102013210092A1 (en) * 2013-05-29 2014-12-04 Robert Bosch Gmbh Process for producing a solar cell
DE112013005591C5 (en) * 2013-06-26 2018-10-04 Universität Konstanz Method and device for producing a photovoltaic element with stabilized efficiency
US9947821B2 (en) * 2013-07-26 2018-04-17 Newsouth Innovations Pty Limited High concentration doping in silicon
TWI639199B (en) * 2013-07-26 2018-10-21 新南創新有限公司 Thermal processing in silicon
US20150295101A1 (en) * 2014-04-11 2015-10-15 Nth Tech Corporation Methods for enhancing exciton decoupling with a static electric field and devices thereof
KR101569415B1 (en) * 2014-06-09 2015-11-16 엘지전자 주식회사 Method for manufacturing solar cell
KR20150144585A (en) * 2014-06-17 2015-12-28 엘지전자 주식회사 Post-processing apparatus of solar cell
EP3214658A4 (en) * 2014-10-27 2017-10-25 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing solar cell module and apparatus for manufacturing solar cell module
CN104638063B (en) * 2014-12-19 2016-08-24 陈恩深 Hydrogen passivation method of solar cell
CN104600137B (en) * 2015-01-19 2017-08-04 常州天合光能有限公司 The crystal silicon solar energy battery and its body passivating method of body passivation
US10443941B2 (en) * 2015-05-20 2019-10-15 Illinois Tool Works Inc. Light annealing in a cooling chamber of a firing furnace
CN107750399A (en) * 2015-07-02 2018-03-02 三菱电机株式会社 The manufacture method of solar battery cell and solar battery cell
CN105185864B (en) * 2015-07-18 2017-11-10 广东爱康太阳能科技有限公司 A kind of passivated emitter back side local diffusion crystal silicon solar batteries preparation method
CN107980181A (en) * 2015-08-28 2018-05-01 三菱电机株式会社 The manufacture method of solar battery cell and solar battery cell
WO2017050772A1 (en) * 2015-09-23 2017-03-30 Centrotherm Photovoltaics Ag Methods and device for passivating defects in semiconductor substrates
CN105304753A (en) * 2015-09-25 2016-02-03 中国电子科技集团公司第四十八研究所 N-type cell boron diffusion technology
EP3182465B1 (en) 2015-12-18 2020-03-11 Lg Electronics Inc. Method of manufacturing solar cell
CN105428466B (en) * 2015-12-31 2017-03-29 苏州博阳能源设备有限公司 Silicon chip inserting piece device
CN105702805B (en) * 2016-01-28 2018-02-06 杭州电子科技大学 The laser enhancing hydrogen passivation method of efficient passivation low price silicon materials defect and impurity and application
TW201742259A (en) * 2016-05-16 2017-12-01 昱晶能源科技股份有限公司 Method of hydrogenating solar cell and the device thereof
CN107393971A (en) * 2016-05-16 2017-11-24 昱晶能源科技股份有限公司 Reply the method and its portable apparatus of the efficiency of solar module
CN107394002A (en) * 2016-05-16 2017-11-24 昱晶能源科技股份有限公司 Hydrogenate the method and its device of solar cell
US10461212B2 (en) 2016-06-06 2019-10-29 Newsouth Innovations Pty Limited Method for processing silicon material
TWI584489B (en) * 2016-06-24 2017-05-21 Asia Neo Tech Industrial Co Ltd Method and processing device for hydrogen passivation treatment of solar cell sheet
CN107546296B (en) * 2016-06-24 2020-12-01 科峤工业股份有限公司 Hydrogen passivation treatment method and treatment device for solar cell
TW201806174A (en) * 2016-07-12 2018-02-16 阿波朗索拉爾公司 A method for manufacturing a photovoltaic device
US20180138328A1 (en) * 2016-11-11 2018-05-17 Sunpower Corporation Uv-curing of light-receiving surfaces of solar cells
US11031520B2 (en) 2016-11-22 2021-06-08 Newsouth Innovations Pty Limited Advanced hydrogen passivation that mitigates hydrogen-induced recombination (HIR) and surface passivation deterioration in PV devices
KR101866348B1 (en) 2016-12-28 2018-06-12 한국에너지기술연구원 Method for manufacturing thin silicone wafer by hydrongen, hellium co-implantation
CN107046081B (en) * 2017-03-07 2019-06-14 东莞市科隆威自动化设备有限公司 A kind of anti-light furnace that declines
KR101864275B1 (en) * 2017-03-28 2018-07-13 엘지전자 주식회사 Post-processing apparatus of solar cell
CN107507762B (en) * 2017-09-04 2019-05-03 常州亿晶光电科技有限公司 A method of it improving silicon nitride film and is rich in hydrogen
CN108231651B (en) * 2017-12-26 2020-02-21 厦门市三安光电科技有限公司 Micro-component transfer device and transfer method
US20220262973A1 (en) * 2018-07-30 2022-08-18 mPower Technology, Inc. In-situ rapid annealing and operation of solar cells for extreme environment applications
CN110416357A (en) * 2019-07-11 2019-11-05 苏州迈正科技有限公司 A kind of hetero-junction solar cell hydrogen passivating method, hydrogen passivating device, battery, battery component and solar powered station
CN110459651A (en) * 2019-07-11 2019-11-15 苏州迈正科技有限公司 A kind of hetero-junction solar cell layering hydrogen passivating method, hydrogen passivating device, battery, battery component and solar powered station
FR3099294B1 (en) * 2019-07-26 2021-07-30 Commissariat Energie Atomique PROCESS FOR TREATMENT OF A HETEROJUNCTION PHOTOVOLTAIC CELL PRECURSOR
CN110600558B (en) * 2019-07-27 2021-06-25 江苏顺风光电科技有限公司 Boron process suitable for P + selective emitter battery
EP4052305A4 (en) * 2019-10-30 2023-11-15 mPower Technology, Inc. In-situ rapid annealing and operation of solar cells for extreme environment applications
CN110890445A (en) * 2019-12-09 2020-03-17 通威太阳能(眉山)有限公司 Method for improving photoelectric conversion efficiency of PERC battery
CN114321239A (en) * 2021-12-31 2022-04-12 青岛方冠摩擦材料有限公司 Ceramic fiber reinforced resin-based brake pad mixed material for reducing brake disc crack
CN114050206B (en) * 2022-01-13 2022-07-12 正泰新能科技有限公司 Solar cell and hydrogen passivation method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322253A (en) * 1980-04-30 1982-03-30 Rca Corporation Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
US4584028A (en) * 1984-09-24 1986-04-22 Rca Corporation Neutralization of acceptor levels in silicon by atomic hydrogen
US5304509A (en) * 1992-08-24 1994-04-19 Midwest Research Institute Back-side hydrogenation technique for defect passivation in silicon solar cells
CA2387510A1 (en) * 1999-10-13 2001-04-19 Universitat Konstanz Method and device for producing solar cells
JP2005332913A (en) * 2004-05-19 2005-12-02 Jsr Corp Method for forming silicon film for solar battery, and solar battery
DE102006012920B3 (en) 2006-03-21 2008-01-24 Universität Konstanz Method for producing a photovoltaic element with stabilized efficiency
CN101548032A (en) * 2006-05-15 2009-09-30 阿里斯技术公司 Low-temperature doping processes for silicon wafer devices
US20090025786A1 (en) * 2007-05-07 2009-01-29 Georgia Tech Research Corporation Solar cell having high quality back contact with screen-printed local back surface field
JP2009038180A (en) * 2007-08-01 2009-02-19 National Institute Of Advanced Industrial & Technology Solar cell and manufacturing method thereof
US20090283145A1 (en) * 2008-05-13 2009-11-19 Kim Yun-Gi Semiconductor Solar Cells Having Front Surface Electrodes
KR20110093046A (en) * 2010-02-11 2011-08-18 엘지전자 주식회사 Silicon thin film solar cell and manufacturing method thereof
CN101834233B (en) * 2010-04-01 2012-09-05 河北大学 Method for rapidly depositing hydrogenated amorphous silicon solar battery thin film at low temperature
CN102064216A (en) * 2010-11-22 2011-05-18 晶澳（扬州）太阳能科技有限公司 Novel crystalline silicon solar cell and manufacturing method thereof
FR2977079B1 (en) 2011-06-27 2013-07-26 Commissariat Energie Atomique PROCESS FOR PROCESSING HETEROJUNCTION PHOTOVOLTAIC CELLS TO IMPROVE AND STABILIZE THEIR OUTPUT
EP2852986B1 (en) * 2012-05-21 2019-06-26 NewSouth Innovations Pty Limited Advanced hydrogenation of silicon solar cells

Also Published As

Publication number Publication date
WO2013173867A1 (en) 2013-11-28
TW201405855A (en) 2014-02-01
CN104488094A (en) 2015-04-01
CN106024611A (en) 2016-10-12
TWI601302B (en) 2017-10-01
US20160372625A1 (en) 2016-12-22
EP2863413A3 (en) 2015-08-19
EP2852986A1 (en) 2015-04-01
CN104488094B (en) 2017-03-08
KR20150013871A (en) 2015-02-05
CN104701419A (en) 2015-06-10
EP2852986B1 (en) 2019-06-26
AU2013266009A1 (en) 2014-12-11
AU2013266009B2 (en) 2017-02-16
KR102102873B1 (en) 2020-04-22
US20150111333A1 (en) 2015-04-23
US9847443B2 (en) 2017-12-19
CN106024611B (en) 2018-11-23
EP2852986A4 (en) 2016-03-16
US9412897B2 (en) 2016-08-09
US20150132881A1 (en) 2015-05-14
EP2863413A2 (en) 2015-04-22
US9190556B2 (en) 2015-11-17

Similar Documents

Publication Publication Date Title
SG11201407270XA (en) Advanced hydrogenation of silicon solar cells
SG11201903183QA (en) Advanced hydrogen passivation that mitigates hydrogen-induced recombination (hir) and surface passivation deterioration in pv devices
LIU et al. Study on the provincial difference and influential factors of eco-compensation in China
SG11201811451XA (en) A method for manufacturing a photovoltaic device
García et al. Open top culverts as an alternative drainage system to minimize ecological effects in earth roads.
侯恩庆CHEN Soil inorganic phosphorus fractions of remnant native and plantation forests in Foshan region
Chang et al. Ecological Compensation in China-Progress, Problems and Prospects
CN105926477A (en) Synchronous display control system for road guardrails, based on positioning
Yamagata et al. Agent-based simulation of local electricity sharing system: Can we charge all EVs in a city only with the PVs?
Bhattarai Socio-economic impact of hydropower projects in dzongu region of North Sikkim
Minor et al. The ups and downs of the Santa Rosa Island Fault, Northern Channel Islands, California: more than simple strike slip
Cuilin Optimization Model for Geoheritage Landscape Resources Management Based on Benefit-Sharing in Xinjiang
CN203050211U (en) Bionic tree
Choi Study on the solving conflicts between fishing village community and residents in using community fishing ground
CN205115625U (en) New, hot anode scrap dollie of electrolysis workshop
CN202096026U (en) Anti-radiation shower curtain
CN202096025U (en) Radiation protection curtain
Orecchini et al. Energy Security in the European Union–Volume I: THE EUROPEAN ENERGY SYSTEM. ACHIEVING SUSTAINABILITY AND SECURITY
Tang et al. Economic Benefits of Land Use in Hefei-Nanjing Expressway Service Stations
Wen et al. Spatial Analysis of Pollution-free Land for Tea Plantation and Comprehensive Evaluation of Soil Suitability
罗素梅 et al. Effect of Stand Density on Community Structure and Ecological Effect of Eucalyptus urophylta× E. eamalducensis Plantation
Malam Abdou et al. Compared hydrodynamic behaviour in sedimentary and crystalline sahelian contexts at the point, parcel and small catchment scales
CN202095935U (en) Radiation-proof tablecloth
Bhattarai Global Journal of Sociology
CN109659929A (en) Consider the north and south U.S. interconnected network method of operation planing method in time zone and seasonal factor