CN103608931A - 用于太阳能光伏系统的增强膜 - Google Patents

用于太阳能光伏系统的增强膜 Download PDF

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Publication number
CN103608931A
CN103608931A CN201280029170.1A CN201280029170A CN103608931A CN 103608931 A CN103608931 A CN 103608931A CN 201280029170 A CN201280029170 A CN 201280029170A CN 103608931 A CN103608931 A CN 103608931A
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polycrystalline
cell
type layer
cells
layer
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CN201280029170.1A
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Chinese (zh)
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M·A·哈泽
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201280029170.1A 2011-06-16 2012-05-31 用于太阳能光伏系统的增强膜 Pending CN103608931A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161497688P 2011-06-16 2011-06-16
US61/497,688 2011-06-16
PCT/US2012/040066 WO2012173778A2 (en) 2011-06-16 2012-05-31 Booster films for solar photovoltaic systems

Publications (1)

Publication Number Publication Date
CN103608931A true CN103608931A (zh) 2014-02-26

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CN201280029170.1A Pending CN103608931A (zh) 2011-06-16 2012-05-31 用于太阳能光伏系统的增强膜

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US (1) US20140202515A1 (enExample)
EP (1) EP2721644A2 (enExample)
JP (1) JP2014519718A (enExample)
CN (1) CN103608931A (enExample)
WO (1) WO2012173778A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109192803A (zh) * 2018-09-06 2019-01-11 苏州钱正科技咨询有限公司 一种高性能太阳能电池组件
CN109192804A (zh) * 2018-09-06 2019-01-11 苏州钱正科技咨询有限公司 一种便携式太阳能电池组件

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6338990B2 (ja) * 2014-09-19 2018-06-06 株式会社東芝 多接合型太陽電池
US11231382B2 (en) 2016-06-15 2022-01-25 William N. Carr Integrated thermal sensor comprising a photonic crystal
US11300453B2 (en) 2017-06-18 2022-04-12 William N. Carr Photonic- and phononic-structured pixel for electromagnetic radiation and detection
JP7094668B2 (ja) * 2016-09-21 2022-07-04 株式会社東芝 太陽電池モジュール及び太陽光発電システム
JP6759464B2 (ja) * 2018-03-20 2020-09-23 株式会社東芝 多接合型太陽電池モジュール及び太陽光発電システム
WO2021260084A1 (en) 2020-06-26 2021-12-30 Evolar Ab Photovoltaic top module
JP7633622B2 (ja) * 2021-01-26 2025-02-20 西松建設株式会社 光電変換素子、発電装置
JPWO2023181733A1 (enExample) * 2022-03-25 2023-09-28

Citations (5)

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US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
US4888062A (en) * 1987-08-31 1989-12-19 Canon Kabushiki Kaisha Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %
US20090014055A1 (en) * 2006-03-18 2009-01-15 Solyndra, Inc. Photovoltaic Modules Having a Filling Material
US20100051090A1 (en) * 2008-08-28 2010-03-04 Stion Corporation Four terminal multi-junction thin film photovoltaic device and method
US20100096001A1 (en) * 2008-10-22 2010-04-22 Epir Technologies, Inc. High efficiency multijunction ii-vi photovoltaic solar cells

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US4680422A (en) * 1985-10-30 1987-07-14 The Boeing Company Two-terminal, thin film, tandem solar cells
US4703131A (en) * 1985-11-18 1987-10-27 The Boeing Company CdS/CuInSe2 solar cells with titanium foil substrate
JPS62142372A (ja) * 1985-12-17 1987-06-25 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPH03263880A (ja) * 1990-03-14 1991-11-25 Matsushita Electric Ind Co Ltd 太陽電池及びその製造方法
JPH07263750A (ja) * 1994-03-22 1995-10-13 Japan Energy Corp 半導体発光素子およびその製造方法
JP4213718B2 (ja) * 2004-01-28 2009-01-21 京セラ株式会社 太陽電池モジュール
KR20080079058A (ko) * 2007-02-26 2008-08-29 엘지전자 주식회사 박막형 태양전지 모듈과 그의 제조방법
US8664524B2 (en) * 2008-07-17 2014-03-04 Uriel Solar, Inc. High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US20100059101A1 (en) * 2008-09-10 2010-03-11 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method of photovoltaic device
US8138410B2 (en) * 2008-10-01 2012-03-20 International Business Machines Corporation Optical tandem photovoltaic cell panels
IT1392995B1 (it) * 2009-02-12 2012-04-02 St Microelectronics Srl Pannello solare con due moduli fotovoltaici multicellulari monolitici di diversa tecnologia
US20100326520A1 (en) * 2009-06-29 2010-12-30 Auria Solar Co., Ltd. Thin film solar cell and manufacturing method thereof

Patent Citations (5)

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US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
US4888062A (en) * 1987-08-31 1989-12-19 Canon Kabushiki Kaisha Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %
US20090014055A1 (en) * 2006-03-18 2009-01-15 Solyndra, Inc. Photovoltaic Modules Having a Filling Material
US20100051090A1 (en) * 2008-08-28 2010-03-04 Stion Corporation Four terminal multi-junction thin film photovoltaic device and method
US20100096001A1 (en) * 2008-10-22 2010-04-22 Epir Technologies, Inc. High efficiency multijunction ii-vi photovoltaic solar cells

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109192803A (zh) * 2018-09-06 2019-01-11 苏州钱正科技咨询有限公司 一种高性能太阳能电池组件
CN109192804A (zh) * 2018-09-06 2019-01-11 苏州钱正科技咨询有限公司 一种便携式太阳能电池组件

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WO2012173778A3 (en) 2013-06-27
EP2721644A2 (en) 2014-04-23
JP2014519718A (ja) 2014-08-14
WO2012173778A2 (en) 2012-12-20
US20140202515A1 (en) 2014-07-24

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