CN103608920A - 包括位于led上的散射部分的led阵列及其制作方法 - Google Patents
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Abstract
一种光输出装置具有利用自对准工艺制作在LED阵列上的散射区域,在该自对准工艺期间,每个LED(10)的光被用于控制在光敏层(20)上沉积散射颗粒(22)的工艺。
Description
技术领域
本发明涉及特别地但不完全地利用与透明衬底结构关联的离散光源的光输出装置。本发明还涉及制作这种装置的方法。
背景技术
此类型的照明装置的一个已知示例为所谓的“玻璃中LED”装置。一示例示于图1。典型地使用玻璃板,该玻璃板具有形成电极的透明导电涂层(例如ITO)。该导电涂层被图案化从而制成连接到半导体LED装置的电极。通过将玻璃连同LED 4层压在热塑性层(例如聚乙烯醇缩丁醛PVB)或有机树脂层内部,由此完成组件。
图2在截面图中示出所述已知的玻璃中LED的结构。该装置包括玻璃板1和2。(半)透明电极3a和3b(例如利用ITO或细导电线形成)以及连接到透明电极3a和3b的LED 4位于所述玻璃板之间。一层绝缘材料5(传统上为PVB或UV树脂)设于玻璃板1和2之间。
此类型装置的应用为搁板、陈列柜、立面、办公室隔断、墙面以及装饰性照明。该照明装置可以用于照射其它对象、用于显示图像或者仅仅用于装饰性目的。
顶部发射LED可以被使用,并且这些具有点光源输出。侧面发射LED也可以被使用,光输出接着从树脂中的散射中心被耦合到输出。
为了使点输出更均匀,已知的是在LED上应用反射器或其它光遮挡件,从而充当掩模用于减小局部光输出强度。这增加了装置制作的复杂性,使得就照射方向和照射光斑尺寸而言从离散光源并且以不显著提高制作成本方式提供期望输出变得困难。
还期望形成发光片(luminescent sheet),其优选地是薄的,具有显著的柔性。这使得该产品可以用于更广泛用途并且在制作工艺中也可以节省昂贵的成型工序。需要在大约1-10mm的期望厚度具有柔性的光学透明材料。
一个示例是将LED置于线栅内,该线栅嵌在硅树脂中。这种设计取代昂贵的印刷电路板PCB或玻璃衬底布置。然而,线栅由于其非刚性本质而不允许在LED装置对准中的小的容差。
对于在这种刚性结构中形成的LED,为了掩蔽LED热点,可以如上所述在LED格栅上提供光学结构。然而,用于定位所需要的光学结构的可用容差是低的,例如大约为1mm或更小。用于掩蔽热点的所需要的光学结构要求相对于LED位置的10-100微米范围内的对准水平。因而,光学结构在LED上的精确对准出现问题。
发明内容
根据本发明,提供了一种光输出装置,其包括:
电互连发光二极管阵列;
衬底层,该发光二极管阵列置于该衬底层内或上;
具有在该发光二极管上的部分的附着层,其中该附着层具有光激发属性;以及
附着到该附着层部分的散射颗粒。
本发明利用散射颗粒,所述散射颗粒例如置于LED上从而形成漫反射帽。要求这些反射帽与包含在LED格栅中的LED精确对准,特别是如果LED格栅可能在一定程度上伸缩或变形。这导致LED放置有些不可预测。本发明利用光敏工艺,该光敏工艺被用于在每个LED上沉积散射(并且因此至少部分反射)结构。这使得利用LED提供光激发而能够与LED自对准。
本发明可以应用于具有刚性衬底层的结构,该衬底层承载线栅。然而,当衬底层是柔性时,本发明特别令人感兴趣。这种情况下,当将反射器部分对准在LED上时,衬底层的移动以及线栅形状的精度造成问题,并且这些问题被本发明所解决。据观察,在本发明的范围内,LED阵列可以定位在衬底层的主表面上。然而,将LED阵列定位在衬底层内优选得多。本发明的后一实施例尤为适合于嵌入的LED格栅。
还指出,附着层将优选地是不连续层。这种不连续层不覆盖整个衬底层,而是至少覆盖定位在LED上的层部分。还强调,LED阵列可以设计成一维的,得到成形为光线条(light-lines)的光输出装置。然而,其中LED阵列成形为二维平面的光输出装置是优选的。这种装置具有光片(light-sheet)的形式。
在一个示例中,LED光可以用于敏化/激发光敏粘合剂。随后,诸如TiO2晶粒或磷光体晶粒的散射颗粒可以附着到表面。这提供了一种方法,该方法使得能够基于自对准将反射器制作在LED顶上。LED本身的光被用于控制沉积工艺。
在此示例中,该附着层是基于光激发附着。然而,在另一次优选示例中,该附着层是基于光激发导电性。
封装层可以包括硅树脂并且该散射颗粒可以包括TiO2颗粒。
本发明还提供一种制作光输出装置的方法,其包括:
将电互连发光二极管阵列嵌入封装层;
在该发光二极管上提供附着层;
利用来自该发光二极管的光输出光激发该附着层;以及
将散射颗粒应用到该附着层。
附图说明
现在将参考附图更详细地描述本发明各示例,在附图中:
图1示意性示出已知的玻璃中LED照射装置;
图2在截面图中示意性示出图1的装置的结构;
图3示出不是根据本发明的减小热点的期望反射器布置;以及
图4示出本发明的光输出装置。
相同附图标记在各图中始终用于表示相似部件。
具体实施方式
本发明提供一种光输出装置,其中利用自对准工艺在LED顶上制作散射区域(例如形成反射器),在该自对准工艺期间,LED本身的光被用于控制该散射颗粒的沉积工艺。
图3示出位于线栅上的等间隔LED组件顶上的期望光学结构。
该LED组件包括嵌在透明柔性衬底层中的LED 10和线栅12,该衬底层在此处被用作封装层14。此层可以是硅树脂,但是诸如聚氯乙烯(PVC)或聚氨酯(PU)的其它材料可以被使用。
封装层14的厚度典型地约为1至10mm。
该线栅可以包括可以将所需电流传递到LED的导电线,例如直径为0.25mm的铜线。
线栅和连接的LED由工业标准拾取和放置组装及焊接工艺形成,并且封装通过浇铸或涂覆形成。
LED是典型地离散的现成部件,并且具有2x3mm的典型尺寸和0.5-1mm的高度并且间隔10至50mm,视应用要求而定。
来自每个LED的光输出被示为包络17,并且最大强度的方向垂直于装置的平面。光导层16被示为位于LED 10上,但这是可选的。当光导层被使用时,这可以由诸如聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(PC)、聚苯乙烯(PS)、聚氨酯(PU)以及聚硅氧烷(硅树脂)的透明聚合物形成。该光导层可以通过浇铸、涂覆或层压而安装到该封装层。
该光导层的目的是形成光学腔体,光更均匀地从该光学腔体逃逸。
存在从该腔体的光提取,并且这可以通过在封装层14中和/或在光导层16中散射,或者通过在光导层16上具有光学表面结构来实现。
反射器18被提供在每个LED 10上以阻挡法向方向的明亮强度光斑,使得该装置在其输出表面各处具有更均匀的光强。该反射器例如由TiO2形成。它们可以是仅仅部分反射的,使得它们减小而不是阻挡光强。
在形成反射器中的问题在于,LED位置不是完全规则的,而需要精确对准将反射器18定位在LED 10顶上。
图4示出本发明的装置并且还示出如何进行制作。
图3的结构(但是没有示为18的理想化反射器)被提供有添加了光引发剂的光敏层20,例如蓝光光激发粘合剂(诸如单丙烯酸酯或二丙烯酸酯或环氧树脂)。可替换地,可以使用例如从Henkel和Norland公司可购得的日光可固化感光树脂。
例如,可以使用来自Henkel的名为Loctite 3100、3101、3102或3103的光可固化粘合剂,或者可以使用名为NOA72、NOA75或NOA76的Norland光学粘合剂("NOA")。
利用发射蓝光的二极管而不是发射UV的二极管的优点在于,不允许UV光透射的许多材料却允许蓝光透射。比如,当光导层16由PMMA或PC制成时,它将不让UV光通过。
在装置制作期间,光激发粘合剂涂层20被应用到未完成的封装LED。LED被接通。LED的光局部地激发该粘合剂层。诸如TiO2颗粒或磷光体晶粒的散射颗粒22随后被提供到该结构的表面,并且它们仅仅附着到受激发区域。
最后,残余层被移除并且所附着的散射颗粒留在原位。
散射颗粒优先地附着到LED正上方的光强最高的表面。在各LED之间,所沉积层较薄或不存在,因为粘合剂未被激发。必要时,层沉积工艺可以重复多次。它是一种自调节机制:一旦光强由于来自已被附着颗粒的背散射而降低,散射颗粒的进一步沉积则降低。
光引发剂以例如1-2%的有限浓度被添加到粘合剂的单体,并且它们被聚合工艺用完。它们引发聚合反应并且变为聚合物链的端部部分。因此它们无法二次引发反应;于是需要新的光引发剂分子。当如上所述多次重复该沉积工艺时,这些光引发剂分子被提供。在所形成反射器22顶上沉积新的层,开始新的激发,并且在LED光强最高的那些区域中形成新的反射器。因而,反射器区域从光斑区域向外生长从而递增地使得光输出更均匀。
以此方式,附着工艺自然地趋向于一种在输出表面区域各处给出均匀光强的结构。
一种可替换实施例在于,按照与影印机类似的方式,利用光电导表面来敏化该光导层并且使用电场作为将颗粒吸引到受激发区域的机制。光电导层涂覆在该光导上。LED的光局部地改变该层的导电性,并且带电TiO2颗粒被吸引到该表面。TiO2颗粒可以附加地具有UV激发粘合剂涂层从而将它们永久地附着到该表面。
本发明特别令人感兴趣地用于指示牌、诸如灯的装饰性照明、窗口、建筑玻璃以及保密窗口,不过诸如家具以及其它装饰性物件的其它应用也是可能的。
通过研究附图、公开内容和所附权利要求,本领域技术人员在实践所要求保护的发明时可以理解和达成对所公开实施例的其它变型。在权利要求中,措词"包括"不排除其它元件或步骤,并且不定冠词"一"("a"或"an")不排除多个。在互不相同的从属权利要求中列举了某些措施的纯粹事实并不表示不能有利地使用这些措施的组合。权利要求中的任何参考符号不应解读为限制范围。
Claims (11)
1.一种光输出装置,包括:
电互连发光二极管(10)阵列;
衬底层(14),该发光二极管阵列置于该衬底层内或上;
具有在该发光二极管上的部分的附着层(20),其中该附着层具有光激发属性;以及
附着到该附着层部分的散射颗粒(22)。
2.如权利要求1所述的装置,其中该附着层(20)通过光激发附着形成。
3.如权利要求1所述的装置,其中该附着层(20)通过光激发导电性形成。
4.如前述权利要求中任意一项所述的装置,其中该衬底层(14)是柔性的。
5.如前述权利要求中任意一项所述的装置,其中该衬底层(14)包括硅树脂。
6.如前述权利要求中任意一项所述的装置,其中该散射颗粒(22)包括TiO2颗粒。
7.如前述权利要求中任意一项所述的装置,其中光导层(16)置于该衬底层(14)和该附着层(20)之间。
8.一种制作光输出装置的方法,包括:
将电互连发光二极管(10)阵列置于衬底层(14)中;
在该发光二极管上提供附着层(20);
利用来自该发光二极管的光输出光激发该附着层(20);以及
将散射颗粒(22)应用到该附着层。
9.如权利要求8所述的方法,其中光激发该附着层(20)包括光固化该附着层。
10.如权利要求8所述的方法,其中该散射颗粒(22)带电,并且其中光激发该附着层(20)包括通过光激发而局部地改变该附着层(20)的导电性,并且通过静电吸引而附着该散射颗粒(22)。
11.如权利要求10所述的方法,还包括将该散射颗粒(22)固化在它们被吸引的位置。
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PCT/IB2012/052821 WO2012168858A2 (en) | 2011-06-10 | 2012-06-05 | Light output device and method of manufacture |
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EP (1) | EP2718970A2 (zh) |
JP (1) | JP6164656B2 (zh) |
CN (1) | CN103608920B (zh) |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6199568B2 (ja) * | 2013-01-30 | 2017-09-20 | 株式会社小糸製作所 | 発光モジュール |
US10094523B2 (en) * | 2013-04-19 | 2018-10-09 | Cree, Inc. | LED assembly |
DE102013007641A1 (de) * | 2013-05-06 | 2014-11-06 | Paulmann Licht Gmbh | Beleuchtungsanordnung |
US9423832B2 (en) * | 2014-03-05 | 2016-08-23 | Lg Electronics Inc. | Display device using semiconductor light emitting device |
KR102309831B1 (ko) | 2015-03-23 | 2021-10-13 | 현대모비스 주식회사 | 조명장치 |
EP3430651B1 (en) * | 2016-03-16 | 2019-08-07 | Lumileds Holding B.V. | Method of manufacturing an led module and corresponding module |
US10260683B2 (en) | 2017-05-10 | 2019-04-16 | Cree, Inc. | Solid-state lamp with LED filaments having different CCT's |
KR102383302B1 (ko) * | 2017-11-08 | 2022-04-05 | 엘지디스플레이 주식회사 | 백라이트 유닛 및 이를 포함한 액정표시장치 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1146019A (ja) * | 1997-07-28 | 1999-02-16 | Nichia Chem Ind Ltd | 発光ダイオード及びled表示器の形成方法 |
US6747406B1 (en) * | 2000-08-07 | 2004-06-08 | General Electric Company | LED cross-linkable phospor coating |
CN1713407A (zh) * | 2004-06-16 | 2005-12-28 | 株式会社东芝 | 有机半导体元件及其制造方法 |
CN1813499A (zh) * | 2003-07-02 | 2006-08-02 | 松下电器产业株式会社 | 发光元件及显示装置 |
CN101088140A (zh) * | 2004-03-29 | 2007-12-12 | 连接技术公司 | 从卷筒到卷筒制造的发光纸和密封的半导体电路装置 |
WO2009096057A1 (ja) * | 2008-01-29 | 2009-08-06 | Toppan Printing Co., Ltd. | 光デバイス、光均一デバイス、光学シート、バックライトユニットおよびディスプレイ装置 |
TW201015697A (en) * | 2008-10-13 | 2010-04-16 | Touch Micro System Tech | Light emitting diode package and method of making the same |
CN101790700A (zh) * | 2007-08-27 | 2010-07-28 | 皇家飞利浦电子股份有限公司 | 光输出设备 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07304210A (ja) | 1994-05-12 | 1995-11-21 | Ricoh Co Ltd | 画像形成装置 |
US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
JP2004140185A (ja) * | 2002-10-17 | 2004-05-13 | Matsushita Electric Ind Co Ltd | 発光装置 |
MXPA06011114A (es) * | 2004-03-29 | 2007-01-25 | Articulated Technologies Llc | Hoja luminosa fabricada de rodillo a rodillo y dispositivos encapsulados de circuito semiconductor. |
US7217956B2 (en) * | 2004-03-29 | 2007-05-15 | Articulated Technologies, Llc. | Light active sheet material |
US7427782B2 (en) | 2004-03-29 | 2008-09-23 | Articulated Technologies, Llc | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
JP4655745B2 (ja) * | 2005-04-27 | 2011-03-23 | ソニー株式会社 | バックライト装置とその製造方法、液晶表示装置 |
JP4833611B2 (ja) | 2005-08-17 | 2011-12-07 | 新日本製鐵株式会社 | 溶接性及びガス切断性に優れた溶接構造用490MPa級厚手高張力耐火鋼及びその製造方法 |
RU2369943C2 (ru) * | 2007-03-19 | 2009-10-10 | Валентин Николаевич Щербаков | Светодиодная матрица |
EP1992478A1 (de) * | 2007-05-18 | 2008-11-19 | LYTTRON Technology GmbH | Verbundglaselement, bevorzugt Verbundsicherheitsglaselement, mit integrierter Elektrolumineszenz (EL)-Leuchtstruktur |
RU2331951C1 (ru) * | 2007-07-24 | 2008-08-20 | Закрытое акционерное общество "Светлана-Оптоэлектроника" | Светодиод с двухслойной компаундной областью |
US7862192B2 (en) * | 2008-08-04 | 2011-01-04 | Hon Hai Precision Industry Co., Ltd. | Lighting device |
CN101749654A (zh) * | 2008-12-18 | 2010-06-23 | 富士迈半导体精密工业(上海)有限公司 | 照明装置 |
US20100254127A1 (en) * | 2009-04-01 | 2010-10-07 | Kai-Ren Yang | LED-based lighting module for emitting white light with easily adjustable color temperature |
US20100301728A1 (en) * | 2009-06-02 | 2010-12-02 | Bridgelux, Inc. | Light source having a refractive element |
EP2458268B1 (en) * | 2010-11-26 | 2016-04-20 | LG Innotek Co., Ltd. | Phosphor plate and lighting device |
US20120153311A1 (en) * | 2010-12-17 | 2012-06-21 | Intematix Corporation | Low-cost solid-state based light emitting devices with photoluminescent wavelength conversion and their method of manufacture |
JP5863291B2 (ja) * | 2011-06-28 | 2016-02-16 | 株式会社小糸製作所 | 平面発光モジュール |
-
2012
- 2012-06-05 JP JP2014514192A patent/JP6164656B2/ja not_active Expired - Fee Related
- 2012-06-05 WO PCT/IB2012/052821 patent/WO2012168858A2/en active Application Filing
- 2012-06-05 US US14/122,288 patent/US9470380B2/en not_active Expired - Fee Related
- 2012-06-05 RU RU2013157522/28A patent/RU2589338C2/ru not_active IP Right Cessation
- 2012-06-05 CN CN201280028382.8A patent/CN103608920B/zh not_active Expired - Fee Related
- 2012-06-05 EP EP12730642.1A patent/EP2718970A2/en not_active Withdrawn
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1146019A (ja) * | 1997-07-28 | 1999-02-16 | Nichia Chem Ind Ltd | 発光ダイオード及びled表示器の形成方法 |
US6747406B1 (en) * | 2000-08-07 | 2004-06-08 | General Electric Company | LED cross-linkable phospor coating |
CN1813499A (zh) * | 2003-07-02 | 2006-08-02 | 松下电器产业株式会社 | 发光元件及显示装置 |
CN101088140A (zh) * | 2004-03-29 | 2007-12-12 | 连接技术公司 | 从卷筒到卷筒制造的发光纸和密封的半导体电路装置 |
CN1713407A (zh) * | 2004-06-16 | 2005-12-28 | 株式会社东芝 | 有机半导体元件及其制造方法 |
CN101790700A (zh) * | 2007-08-27 | 2010-07-28 | 皇家飞利浦电子股份有限公司 | 光输出设备 |
WO2009096057A1 (ja) * | 2008-01-29 | 2009-08-06 | Toppan Printing Co., Ltd. | 光デバイス、光均一デバイス、光学シート、バックライトユニットおよびディスプレイ装置 |
TW201015697A (en) * | 2008-10-13 | 2010-04-16 | Touch Micro System Tech | Light emitting diode package and method of making the same |
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EP2718970A2 (en) | 2014-04-16 |
JP2014516198A (ja) | 2014-07-07 |
RU2013157522A (ru) | 2015-07-20 |
US9470380B2 (en) | 2016-10-18 |
JP6164656B2 (ja) | 2017-07-19 |
US20140160752A1 (en) | 2014-06-12 |
WO2012168858A2 (en) | 2012-12-13 |
WO2012168858A3 (en) | 2013-05-23 |
CN103608920B (zh) | 2016-08-17 |
RU2589338C2 (ru) | 2016-07-10 |
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