CN103606547A - 一种带激光修调工艺的集成电路版图结构及集成芯片 - Google Patents
一种带激光修调工艺的集成电路版图结构及集成芯片 Download PDFInfo
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CN201310618430.5A CN103606547B (zh) | 2013-11-29 | 2013-11-29 | 一种带激光修调工艺的集成电路版图结构及集成芯片 |
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CN103606547A true CN103606547A (zh) | 2014-02-26 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112183012A (zh) * | 2020-09-15 | 2021-01-05 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种激光雷达接收器前端读出集成电路像素单元版图结构 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1226084A (zh) * | 1998-02-12 | 1999-08-18 | 日本电气株式会社 | 半导体器件及其制造方法 |
CN1249538A (zh) * | 1998-09-28 | 2000-04-05 | 惠普公司 | 可修改的半导体电路元件 |
TWI300266B (en) * | 2005-12-12 | 2008-08-21 | Taiwan Semiconductor Mfg | Laser fuse with efficient heat dissipation |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1226084A (zh) * | 1998-02-12 | 1999-08-18 | 日本电气株式会社 | 半导体器件及其制造方法 |
CN1249538A (zh) * | 1998-09-28 | 2000-04-05 | 惠普公司 | 可修改的半导体电路元件 |
TWI300266B (en) * | 2005-12-12 | 2008-08-21 | Taiwan Semiconductor Mfg | Laser fuse with efficient heat dissipation |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112183012A (zh) * | 2020-09-15 | 2021-01-05 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种激光雷达接收器前端读出集成电路像素单元版图结构 |
CN112183012B (zh) * | 2020-09-15 | 2023-11-10 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种激光雷达接收器前端读出集成电路像素单元版图结构 |
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Address after: 518057 Room 2303, 23rd Floor, Desai Science and Technology Building, 9789 Shennan Avenue, Nanshan District, Shenzhen City, Guangdong Province (Building Sign 2603) Patentee after: SHENZHEN DESAY MICROELECTRONIC TECHNOLOGY CO.,LTD. Address before: 518057 Room 2303, 23rd Floor, Desai Science and Technology Building, 9789 Shennan Avenue, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN DESAY MICROELECTRONIC TECHNOLOGY CO.,LTD. |
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Effective date of registration: 20220629 Address after: 516003 23rd floor, Desai building, No. 12 Yunshan West Road, Huizhou City, Guangdong Province Patentee after: Guangdong Desai Group Co.,Ltd. Address before: 518057 room 2303, 23rd floor, Desai science and technology building, No. 9789, Shennan Avenue, Nanshan District, Shenzhen City, Guangdong Province (the building logo is room 2603) Patentee before: SHENZHEN DESAY MICROELECTRONIC TECHNOLOGY CO.,LTD. |
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Effective date of registration: 20220817 Address after: 516006 No. 101, Hechang fifth Road West, Zhongkai high tech Zone, Huizhou City, Guangdong Province (plant a) Patentee after: Guangdong Desai silicon praseodymium Technology Co.,Ltd. Address before: 516003 23rd floor, Desai building, No. 12 Yunshan West Road, Huizhou City, Guangdong Province Patentee before: Guangdong Desai Group Co.,Ltd. |