CN103606520B - A kind of preparation method of thin flm circuit test metal protective film - Google Patents
A kind of preparation method of thin flm circuit test metal protective film Download PDFInfo
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- CN103606520B CN103606520B CN201310605876.4A CN201310605876A CN103606520B CN 103606520 B CN103606520 B CN 103606520B CN 201310605876 A CN201310605876 A CN 201310605876A CN 103606520 B CN103606520 B CN 103606520B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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Abstract
The invention discloses the preparation method of a kind of thin flm circuit test metal protective film; it comprises the following steps: coats a layer photoetching glue on the ceramic substrate being coated with TaN/TiW/Au metal film, then uses the method for photoetching to remove the photoresist of described plated film ceramic substrate inverter circuit visuals；The described plated film ceramic substrate of photoetching treatment is carried out band glue electrogilding and electronickelling protecting film, then removes photoresist；Use the method coating photoresist protection circuit pattern etching non-graphic part Au/TiW layer of photoetching；The method using photoetching again coats a layer photoetching glue, the resistive layer of etching non-lithographic glue protection part in visuals and the circuitous resistance part of described plated film ceramic substrate, forms circuitous resistance；Removing whole photoresist the most again and carry out resistance correction, electronickelling protecting film is removed in final etching, obtains thin flm circuit.Add electroless nickel layer and the procedure of processing of corrosion nickel dam, can be good at protecting the most tested probe of gold ribbon line to damage by electronickelling metal protective film, improve quality and the yield rate of thin flm circuit processing, reduce the preparation cost of thin flm circuit.
Description
Technical field
The present invention relates to thin flm circuit processing and fabricating field, be specifically related to the preparation side of a kind of thin flm circuit test metal protective film
Method.
Background technology
Microwave membrane circuit has the advantage that interconnection density is high, lines precision is high, by extensively should be in communication and space industry.Microwave
Thin flm circuit processing and fabricating typically will be through photoetching, plating, cutting-up, the several processing step of resistance trimming.Wherein resistance trimming is by hot oxygen
The methods such as change, anodic oxidation, laser resistor trimming make resistance reach to design claimed range.Need during resistance trimming with test
Probe repeatedly film resistor is carried out resistance test, put in place determining whether resistance trims.Owing to the conductor layer of thin flm circuit is
Gold, its quality is soft, and it is easily caused contact damage by test probe.Test pressure point and the cut of many is formed at circuit surface.
On the one hand can affect thin flm circuit surface topography, another aspect can produce impact to thin flm circuit electrical performance indexes.For some
There are the thin flm circuit of particular/special requirement, wire damage can cause circuit malfunction.Such as programmable attenuator thin flm circuit, circuit band wire needs
Will carry out Elastic Contact with reed, test damage can make circuit band wire surface layer gold uneven whole, easily cause reed and circuit
Band wire loose contact, causes circuit Joint failure.
Current thin film circuit resistance trimming generally uses laser resistor trimming and manual anodic oxidation resistance trimming.About reducing the test of thin flm circuit resistance trimming
Scuffing aspect, the test probe of laser resistor trimming is Mechanical course, it is possible to the displacement accuracy and the probe that well control test probe are surveyed
Pressure testing power, the test of thin flm circuit band wire is damaged few, substantially disclosure satisfy that thin flm circuit processing and fabricating requirement by test probe.But
Laser resistor trimming equipment price is expensive, the most millions of the most up to ten million, increases considerably production cost.
Manual anodic oxidation resistance trimming is mainly by improving the labour skill of operator, by skilled control manual probe platform probe
Displacement and probe test pressure, reduce test the probe damage to circuit band wire.Tested probe by hand control probe station, visit
Pin displacement accuracy and test pressure cannot accurately control, it is impossible to avoid the test damage of thin flm circuit band wire.Thin flm circuit crudy
Depend primarily on the labour skill level of operator.Product processing quality and concordance are difficult to ensure that, inferior rate is higher.
Therefore, prior art needs further improvement and develops.
Summary of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide the system of a kind of thin flm circuit test metal protective film
Preparation Method, it is to avoid thin flm circuit band wire is caused test damage by test probe, improves product quality and production efficiency.
For solving above-mentioned technical problem, the present invention program includes:
A kind of preparation method of thin flm circuit test metal protective film, it comprises the following steps:
A, on plated film ceramic substrate, coat a layer photoetching glue, then use the method for photoetching to remove described plated film ceramic substrate inverter circuit
The photoresist of visuals；
B, the described plated film ceramic substrate of photoetching treatment is carried out band glue electrogilding and electronickelling protecting film, then remove residue photoresist；
C, the method coating photoresist protection circuit pattern etching non-graphic part Au/TiW layer of employing photoetching；
D, coating a layer photoetching glue at the visuals of described plated film ceramic substrate and circuitous resistance part again, etching removes described plating
The resistive layer of the non-graphic part of film ceramic substrate, forms resistance；Remove whole photoresist the most again and carry out resistance correction, finally
Etching away electronickelling protecting film, obtains thin flm circuit.
Described preparation method, wherein, concrete the including of described step A: ceramic substrate is the aluminium oxide of purity more than 99.6%
Substrate or the aluminium nitride chip of purity 98% or quartz substrate, its thickness range is: 0.1mm-0.65mm；Employing vacuum sputtering plates
The method of film on a ceramic substrate, coats layer of metal composite membrane, and front side films Rotating fields is TaN/TiW/Au, and reverse side is TiW/Au,
Form described plated film ceramic substrate.
Described preparation method, wherein, concrete also the including of described step A: coat a layer photoetching glue and refer to use sol evenning machine to exist
One layer of positive photoresist of rotary coating on described plated film ceramic substrate；Remove described plated film ceramic substrate inverter circuit visuals photoetching
Glue include photoresist front baking, expose, develop, post bake step.
Described preparation method, wherein, concrete the including of described step B: carry out in band glue electrogilding and electronickelling protecting film,
Electrogilding protecting film thickness is 3 μm-4 μm, and electronickelling protecting film thickness is 1.5 μm-2 μm；Acetone is used to remove described residue
Photoresist.
Described preparation method, wherein, concrete the including of described step C: use corrosive liquid to remove the Au/TiW of inverter circuit part
Layer.
Described preparation method, wherein, concrete the including of described step D: remove described plated film pottery with reactive ion etching equipment
The TaN layer of the non-resistive part of ceramic chip, forms circuitous resistance.
Described preparation method, wherein, concrete the including of described step D: remove photoresist with acetone, use anodised side
Method trims the resistance of film resistor on described plated film ceramic substrate, until making resistance reach requirement.
Described preparation method, wherein, concrete also the including of described step D: use liquor ferri trichloridi etching away electronickelling
Protecting film.
The preparation method of a kind of thin flm circuit test metal protective film that the present invention provides, adds electroless nickel layer and corrosion nickel dam
Procedure of processing, by electronickelling metal protective film can be good at protect the most tested probe of gold ribbon line damage, to resistance test
Result does not results in any impact, and protects nickel dam easily to remove after resistance trimming test, simultaneously electroless nickel layer to the electrical property of gold ribbon line and
The pressure welding operation of follow-up assembling will not bring any harmful effect, improves product quality and production efficiency, makes employing manual simultaneously
Anodic oxidation resistance trimming method, still can be good at avoiding test probe and thin flm circuit band wire causes test damage, it is to avoid
The laser resistor trimming equipment that buying is expensive, reduces the preparation cost of thin flm circuit.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet applying preparation method in the present invention；
Fig. 2 is photolithographic mask hectograph schematic diagram of the present invention；
Fig. 3 is circuit production step state side schematic view of the present invention；
Fig. 4 is circuit production step state front schematic view of the present invention；
Wherein in Fig. 3 Yu Fig. 4,1 is gold film, and 2 is titanium tungsten metal film, and 3 is tantalum nitride metal film, and 4 is nickel dam, and 5 is pottery
Ceramic chip, 6 is photoresist.
Detailed description of the invention
The invention provides the preparation method of a kind of thin flm circuit test metal protective film, for making the purpose of the present invention, technical side
Case and effect are clearer, clear and definite, and the present invention is described in more detail below.Should be appreciated that concrete reality described herein
Execute example only in order to explain the present invention, be not intended to limit the present invention
The invention provides the preparation method of a kind of thin flm circuit test metal protective film, it comprises the following steps:
Step one, coats a layer photoetching glue on plated film ceramic substrate, then uses the method for photoetching to remove described plated film ceramic substrate
The photoresist of inverter circuit visuals；
Step 2, carries out the described plated film ceramic substrate of photoetching treatment band glue electrogilding and electronickelling protecting film, then removes residue
Photoresist；
Step 3, uses the method coating photoresist protection circuit pattern etching non-graphic part Au/TiW layer of photoetching；
Step 4, then coat a layer photoetching glue at the visuals of described plated film ceramic substrate and circuitous resistance part, etching is removed
On described plated film ceramic substrate, the resistive layer of non-lithographic glue protection part, forms resistance；Remove whole photoresist the most again to hinder
Value is revised, and final etching is removed electronickelling protecting film, obtained thin flm circuit.
Further, concrete the including of described step one: ceramic substrate is alumina substrate or the purity of purity more than 99.6%
The aluminium nitride chip of 98% or quartz substrate, its thickness range is: 0.1mm-0.65mm；Use the method for vacuum sputtering coating at pottery
On ceramic chip, coating layer of metal composite membrane, front side films Rotating fields is TaN/TiW/Au, and reverse side is TiW/Au, forms described plating
Film ceramic substrate.
And concrete also the including of described step one: coat a layer photoetching glue and refer to use sol evenning machine on described plated film ceramic substrate
One layer of positive photoresist of rotary coating；Remove described plated film ceramic substrate inverter circuit visuals photoresist include photoresist front baking,
Exposure, development, post bake step.
In another preferred embodiment of the present invention, concrete the including of described step 2: carry out band glue electrogilding and protect with electronickelling
In film, electrogilding protecting film thickness is 3 μm-4 μm, and electronickelling protecting film thickness is 1.5 μm-2 μm；Acetone is used to remove institute
State residue photoresist.Concrete the including of described step 3: use corrosive liquid to remove the Au/TiW layer of inverter circuit part.
Further, concrete the including of described step 4: remove the non-of described plated film ceramic substrate with reactive ion etching equipment
The TaN layer of active component, forms circuitous resistance.And remove photoresist with acetone, trim described plating by anodised method
The resistance of film resistor on film ceramic substrate, until making resistance reach requirement.And use liquor ferri trichloridi etching away electronickelling
Protecting film, forms final thin flm circuit.
Au/TiW the most mentioned in this article is gold/titanium tungsten metal film, and TaN/TiW/Au is tantalum nitride/titanium tungsten/gold metal film, TiW/Au
For titanium tungsten/gold metal film, TaN is tantalum nitride metal film, in order to compose a piece of writing conveniently, the most all uses the element of correspondence to meet simplification
Represent.
In order to the preparation method of the present invention is described in further detail, it is exemplified below more detailed embodiment and illustrates, such as Fig. 1 institute
Show.
Step 101: whole piece plated film ceramic substrate is provided；
Step 102: coat a layer photoetching glue on described plated film ceramic substrate；
Step 103: use the method for photoetching to remove the photoresist of inverter circuit visuals on described plated film ceramic substrate；
Step 104: then described plated film ceramic substrate is carried out band glue electrogilding, electronickelling protecting film.
Step 105: remove residue photoresist on described plated film ceramic substrate；
Step 106: again coat described plated film ceramic substrate protection circuit figure with photoresist and nickel protection film, then etch institute
State non-graphic part Au/TiW layer on plated film ceramic substrate.
Step 107: visuals and circuitous resistance part coat a layer photoetching glue on described plated film ceramic substrate；
Step 108: etching removes the resistive layer of non-graphic part on described plated film ceramic substrate, forms resistance；
Step 109: remove all photoresists on described plated film ceramic substrate and carry out resistance correction；
Step 110: nickel dam on plated film ceramic substrate described in erosion removal, forms final thin flm circuit.
In above-mentioned steps 101, as shown in Fig. 3 a, Fig. 4 a, the thin flm circuit dielectric substrate material of selection is that purity 99.6% aoxidizes
Aluminum pottery, thickness is 0.254mm, uses the method for vacuum sputtering coating on above-mentioned substrate, coats layer of metal composite membrane,
Front side films Rotating fields is TaN/TiW/Au, and reverse side is TiW/Au.Wherein TaN layer thickness is 0.05-0.08 μm, TiW thickness
Degree is 0.03-0.05 μm, and Au layer thickness is 0.15-0.2 μm, ceramic substrate is carried out organic ultrasonic cleaning and water before sputtering
The dirt on surface is removed in agent ultrasonic cleaning, so that sputtered layer tack meets the requirements.
In above-mentioned steps 102, as shown in Fig. 3 b, Fig. 4 b, coating photoresist step, the photoresist used during gluing is RZJ-390
Type positive photoresist, its main component is 12-25% phenolic resin, and solvent composition is the propylene glycol monomethyl ether acetate of more than 75%.
Using sol evenning machine rotary coating, spin coating rotating speed is 1000 revs/min.Photoresist final thickness to reach 3 μm-4 μm.If
Thickness low LCL need to repeat spin coating to reach required value.
In above-mentioned steps 103, as shown in Fig. 3 c, Fig. 4 c, the concrete steps of photoetching process include: the front baking of coating substrate
Exposure imaging post bake.
In photoetching front baking step, the photoresist to coating, carry out bakeing volatile fraction solvent, toast with baking oven, temperature is 85 DEG C,
Baking time 10 minutes.
In photolithographic exposure step, use ultraviolet photolithographic machine mask hectograph that circuitous pattern part photoresist is carried out uv-exposure,
Ultraviolet ray intensity to control 5～9mW/cm2, time of exposure 40 seconds, this mask hectograph is as shown in Figure 2 a.
In photoetching in development step, it is the operation exposed photoresist being removed with developer solution, uses method of immersing to remove,
Using the alkaline-based developer that producer is special, developing time is 30～50s, exposed positive photoresist is removed, shape after development
Become the photoetching offset plate figure needed.
In photoetching in post bake step, it is that further baking of photoresist is removed solvent, is 120 DEG C with oven temperature, during baking
Between 30-40 minute.
In above-mentioned steps 104, as shown in Fig. 3 d, Fig. 4 d, use citric acid gold potassium gold plating liquid unidirectional current gold-plated, electric current density
It is 3～10mA/cm2；Thickness of coating: 3 μm-4 μm.Using nickel sulfamic acid nickel-plating liquid electronickelling, electric current density is 10mA/cm2,
Electroplated Ni layer thickness is 1.5-2 μm.
In above-mentioned steps 105, as shown in Fig. 3 e, Fig. 4 e, the medicament removing photoresist is acetone, and acetone is analytical pure, logical
Cross immersion and dissolve photoresist, be then passed through ultrasonic cleaning and remove substrate surface photoresist and dirt.
Above-mentioned steps 106, as shown in Fig. 3 f, Fig. 4 f, in etching TiW/Au step, by coating photoresist concrete steps
With step 102.The concrete lithography step of photoetching is with step 103 the most again, carries out photoetching with mask hectograph as shown in Figure 2 b.
Plating patterns part is made to coat one layer of protection photoresist.Photoresist that non-graphic part is unglazed is protected.
In etching TiW/Au step, after photoetching is complete, the TiW/Au film layer to non-graphic part corrodes.Corrosion Au uses
Iodine and potassium iodide corrosive liquid, concrete formula is KI:I2:H2O=4:1:14, etching time is 20 seconds.The corrosive liquid of etching TiW is joined
Side is H2O2:H2O=1:1, etching time is 1 minute.Removing photoresist with acetone after corroding, concrete steps are with step 105.
In above-mentioned steps 107, as shown in Fig. 3 g, Fig. 4 g, the protection in removal step 106 with photoresist, at visuals
And circuitous resistance part one layer of new photoresist of coating, coating photoresist concrete steps are with step 102.Photoetching the most again, specifically
Lithography step is with step 103, with mask hectograph photoetching as shown in Figure 2 c.Visuals and circuitous resistance portion is made to be coated with by photoetching
Cover one layer of protection photoresist.Photoresist that other parts are unglazed is protected.
Above-mentioned steps 108, as shown in Fig. 3 h, Fig. 4 h, in etching TaN step, corrodes TaN resistive layer after photoetching is complete.
Corrosion uses reactive ion etching machine corrosion, and reactive ion etching is dry etching, and major advantage is not result in the corrosion of film layer side.
Remove the TaN layer of non-resistive part, form final resistance circuit.
Above-mentioned steps 109, as shown in Fig. 3 i, Fig. 4 i, removes photoresist method and manually visits with step 105, employing after having etched
Pin platform carries out anodic oxidation resistance trimming to film resistor.Cardinal principle is to be powered up film resistor making resistance hinder by anodic oxidation
Value becomes the resistance reaching greatly design needs.Resistance trimming voltage is 50V～150V, resistance trimming electrolyte be oxalic acid, ethylene glycol, water mixed
Close solution.
Above-mentioned steps 109, in need during resistance is carried out anodic oxidation resistance trimming with test probe to film resistor gold ribbon line
Carry out engaged test repeatedly.Resistance trimming is examined under a microscope after completing, and nickel plating protecting film surface only has slight scuffing.
In above-mentioned steps 110, as shown in Fig. 3 j, Fig. 4 j, after 100g/L ferric chloride corrosive liquid corrosion nickel protection layer, shape
Become final circuit.Liquor ferri trichloridi does not corrode layer gold, and circuit is not resulted in infection.Examine under a microscope after corrosion
Finding, gold conduction band surface is intact not to be scratched.This is hard mainly due to nickel metal quality, and the thickness of coating of 1-2 μm just can be to gold
Conduction band forms good protection, and test probe cannot hurt conduction band layer gold.And there is no table after the golden conduction band resistance trimming test of nickel protection layer
It is more serious that face scratches ratio.By contrast above it appeared that nickel protection film can form good protection to layer gold.
Circuit layer gold carrying out pressure welding test and uses WEST BOND gold wire bonder, line footpath 30 μm, test gold thread is bonded dynamics,
Test 5 resistance trimming rear film circuit gold thread bond-pull test results, as shown in table 1.
Table 1
| Test point | Value of thrust |
| 1 | 11.3 |
| 2 | 10.5 |
| 3 | 11.8 |
| 4 | 12.9 |
| 5 | 13.5 |
| Average | 12 |
By gold wire bonding dynamics tensile test, pulling force average is 12g, much larger than the 4g value of thrust of military standard of China.Plating Ni
Circuit layer gold pressure welding effect is not affected by layer, spun gold and Au layer good bonding strength, and the spun gold place of breaking is gold wire ball solder joint, gold film
Layer is intact, and the phenomenons such as peeling comes off do not occur.
Certainly, only presently preferred embodiments of the present invention described above, the present invention is not limited to enumerate above-described embodiment, it should say
Bright, any those of ordinary skill in the art are under the teaching of this specification, and all equivalents made substitute, substantially become
Shape form, within all falling within the essential scope of this specification, ought to be protected by the present invention.
Claims (8)
1. a preparation method for thin flm circuit test metal protective film, it comprises the following steps:
A, on the ceramic substrate of plated film, coat a layer photoetching glue, then use the method for photoetching to remove described plated film ceramic substrate non-electrical
The photoresist of road visuals；
B, the described plated film ceramic substrate of photoetching treatment is carried out band glue electrogilding and electronickelling protecting film, then remove residue photoresist；
C, the method coating photoresist protection circuit pattern etching of employing photoetching are positioned at non-graphic part Au/TiW above ceramic substrate
Layer；
D, coating a layer photoetching glue at the visuals of described plated film ceramic substrate and circuitous resistance part again, etching removes described plating
On film ceramic substrate, the resistive layer of non-lithographic glue protection part, forms resistance；Remove whole photoresist the most again and carry out resistance correction,
Electronickelling protecting film is removed in final etching, obtains thin flm circuit.
Preparation method the most according to claim 1, it is characterised in that concrete the including of described step A: ceramic substrate is
Purity is alumina substrate or aluminium nitride chip that purity is 98% or the quartz substrate of more than 99.6%, and its thickness range is:
0.1mm-0.65mm；Using the method for vacuum sputtering coating on a ceramic substrate, coat layer of metal composite membrane, front side films layer is tied
Structure is TaN/TiW/Au, and reverse side is TiW/Au, forms described plated film ceramic substrate.
Preparation method the most according to claim 2, it is characterised in that concrete also the including of described step A: coat one layer
Photoresist refers to use sol evenning machine one layer of positive photoresist of rotary coating on described plated film ceramic substrate；Remove described plated film pottery
Substrate inverter circuit visuals photoresist include photoresist front baking, expose, develop, post bake step.
Preparation method the most according to claim 1, it is characterised in that concrete the including of described step B: carry out band glue electricity
Gold-plated with electronickelling protecting film, electrogilding protecting film thickness is 3 μm-4 μm, and electronickelling protecting film thickness is 1.5 μm-2 μm；
Acetone is used to remove described residue photoresist.
Preparation method the most according to claim 1, it is characterised in that concrete the including of described step C: use corrosive liquid
Remove the Au/TiW layer of inverter circuit part.
Preparation method the most according to claim 1, it is characterised in that concrete the including of described step D: use reactive ion
Etching apparatus removes the TaN layer of non-lithographic glue protection part on described plated film ceramic substrate, forms circuitous resistance.
Preparation method the most according to claim 1, it is characterised in that concrete the including of described step D: remove with acetone
Photoresist, trims the resistance of film resistor on described plated film ceramic substrate by anodised method, until making resistance reach requirement.
Preparation method the most according to claim 1, it is characterised in that concrete also the including of described step D: use trichlorine
Change ferrous solution etching away electronickelling protecting film.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104037115B (en) * | 2014-06-12 | 2017-05-17 | 中国电子科技集团公司第四十一研究所 | Manufacturing method of aluminium nitride-based thin film circuit |
| CN104332330B (en) * | 2014-10-10 | 2017-09-05 | 中国电子科技集团公司第四十一研究所 | A kind of dielectric layer is the manufacture method of the thin film capacitor of anode oxide film |
| CN104409323B (en) * | 2014-10-24 | 2017-05-24 | 中国电子科技集团公司第四十一研究所 | Microwave film resistor manufacture method |
| CN106252070A (en) * | 2015-06-12 | 2016-12-21 | 中国振华集团云科电子有限公司 | A kind of thin gold lithographic method of microwave single-layer capacitor |
| CN105719783A (en) * | 2015-07-23 | 2016-06-29 | 中国电子科技集团公司第四十一研究所 | Thin-film resistor adjustment device for microwave circuit and adjustment method of thin-film resistor adjustment device |
| CN105826231B (en) * | 2016-05-18 | 2019-01-18 | 中国电子科技集团公司第四十一研究所 | The graphic plating method of two kinds of sheet resistance thin film circuits is integrated on dielectric substrate same plane |
| CN109536889A (en) * | 2018-12-29 | 2019-03-29 | 广州创天电子科技有限公司 | A kind of forming method of ceramic membrane circuit and its splash-proofing sputtering metal coating |
| CN109487211A (en) * | 2018-12-29 | 2019-03-19 | 广州创天电子科技有限公司 | A kind of forming method of thin film circuit and its splash-proofing sputtering metal coating |
| CN110993556A (en) * | 2019-11-20 | 2020-04-10 | 中电国基南方集团有限公司 | Method for preparing ceramic thin film circuit with electroplated nickel layer as mask layer |
| CN114142196B (en) * | 2021-11-29 | 2023-06-16 | 中国电子科技集团公司第四十三研究所 | Resistance type attenuator |
| CN116106591B (en) * | 2023-01-10 | 2023-09-19 | 佛山市蓝箭电子股份有限公司 | Manufacturing method of microwave probe and microwave probe |
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| CN1949954A (en) * | 2005-10-12 | 2007-04-18 | 中华映管股份有限公司 | Method for making metal wire |
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