JPH1144708A - Contact probe and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a contact probe having high hardness and tenacity capable of coping with bending and repeated use, suppressing a crack on a bent portion, having good conductivity, and excellent in high-frequency characteristic. SOLUTION: Multiple pattern wires 3 are formed on a film 2, and tips of the pattern wires 3 are protruded from the film 2 as contact pins 3a to form a contact probe 1. Each contact pin 3a is provided with at least the first metal layer NM made of a nickel-manganese alloy containing manganese 0.05 wt.% or above and the second metal layer AU having tenacity and conductivity higher than those of the first metal layer NM, and the contact pin 3a is bent at the middle position V with the second metal layer AU arranged on the outside.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used as a probe pin, a socket pin, or the like, and is incorporated in a probe card, a test socket, or the like, and contacts each terminal of a semiconductor IC chip, a liquid crystal device, or the like to perform an electrical test. And a method for manufacturing the same.

[0002]

2. Description of the Related Art In general, a contact pin is used to conduct an electrical test by contacting a semiconductor chip such as an IC chip or an LSI chip or each terminal of an LCD (liquid crystal display). In recent years, as the integration and miniaturization of IC chips and the like have increased, the pitch of contact pads, which are electrodes, has been reduced, and the pitch of contact pins has been required to be narrower. However, with a tungsten needle contact probe used as a contact pin, it has been difficult to cope with a multi-pin narrow pitch due to the limitation of the diameter of the tungsten needle.

On the other hand, for example, Japanese Patent Publication No. 7-820
No. 27 proposes a contact probe technique in which a plurality of pattern wirings are formed on a resin film, and the ends of these pattern wirings are arranged so as to protrude from the resin film and serve as contact pins. In this technical example, the tip of each of the plurality of pattern wirings is used as a contact pin, thereby achieving a narrow pitch with a large number of pins.
This eliminates the need for many complicated components.

In the above-described contact probe, the amount of pressing of the contact pin is increased or decreased in order to obtain a desired contact pressure during a test. However, a large amount of pressing is required to obtain a large contact pressure. However,
The above contact probe has a tip portion of the pattern wiring,
That is, since the contact pin is formed of Ni (nickel), the hardness is only about Hv300, and the contact pin is bent or deformed due to excessive contact pressure due to low hardness, so that the pressing amount is reduced. And the contact pressure was not large. As a result, a contact pressure sufficient for electrical measurement cannot be obtained, causing a contact failure.

As a countermeasure, there is a means for adding an additive such as saccharin when forming Ni by plating. In this case, it is possible to maintain a hardness of Hv 350 or more at room temperature. Since the additive contains S (sulfur), when heated at a high temperature, for example, at 300 ° C., there is an inconvenience that the hardness rapidly decreases to Hv 200 or less. For this reason, when the above-mentioned contact probe is sometimes put at a high temperature, it cannot be used particularly for a chip carrier for a burn-in test or the like.

Therefore, a contact probe made of a nickel-manganese (Ni-Mn) alloy has been proposed which has improved hardness and also has heat resistance and can stably maintain high hardness even after heating at a high temperature.

The surface of each terminal (pad) of an IC chip or the like formed of an Al (aluminum) alloy or the like is oxidized in the air, and is in a state of being covered with a thin aluminum surface oxide film. I have. Therefore, in order to conduct an electric test of the pad, it is necessary to secure the conductivity by exfoliating the surface oxide film of aluminum and exposing the aluminum inside.

Therefore, in the above-mentioned contact probe, the contact pin is brought into contact with the surface of the pad and is overdriven (the contact pin is brought down after contact with the pad) so that the tip of the contact pin is brought down. The surface oxide film of aluminum on the surface of the pad is scraped off to expose the aluminum inside. The above-mentioned operation is performed by scrubbing.
It is called b) and is important for ensuring electrical testing.

In the above contact pins, in order to prevent the base of the pad from being damaged during scrubbing, it is necessary to ensure a sufficient contact angle of the contact pin with the pad. The reason for this is that if the contact angle is small, the rejection of aluminum on the surface becomes extremely large, affecting the pad base.

As a countermeasure, as shown in FIG. 27, a contact probe 601 bent at an intermediate position V of a contact pin 600 has been proposed. In the contact probe 601, the angle of the contact pin 600 with respect to the object to be measured (pad) can be changed between the distal end portion and the proximal end portion, and the angle of the contact pin 600 with respect to the pad at the proximal end portion, that is, the pad of the film 602. It is possible to increase the angle (contact angle) between the tip of the contact pin 600 and the pad without increasing the angle with respect to. That is, the contact probe 601 has an advantage that the base of the pad can be prevented from being damaged during the scrub without increasing the scrub distance excessively and without increasing the height of the probe device. .

The contact probe 601 having the bent contact pin 600 is formed of the above-described Ni-Mn.
In the case where an alloy contact pin is employed, as shown in FIG. 27, if the contact pin 600 is formed by bending it at an intermediate position V, cracks or breaks may occur outside the bent portion. Was. Further, even if no cracks or the like are generated at the time of bending, there is a possibility that a crack or the like may be generated outside the bent portion by repeated use. This is because Ni
-In a contact probe made of a Mn alloy, Mn must be contained in a certain concentration or more in order to improve hardness, but in this case, the toughness of the contact pin is reduced, and the outside of the bent portion is most elongated at the time of bending. This causes cracks and the like to occur.

Therefore, by providing a Ni—Mn alloy layer having a low Mn concentration outside the bent portion and providing a Ni—Mn alloy layer having a high Mn concentration inside the bent portion, cracks and the like outside the bent portion can be prevented. It can be prevented.

[0013]

However, as described above, even if the Mn concentration is reduced to about 0.03% by weight outside the bent portion, only about 3 to 5% of elongation is obtained, and sufficient toughness is obtained. However, it was not possible to prevent cracks and the like generated outside the bent portion.

Further, when the line width of the contact pin becomes smaller as the pitch becomes narrower, the DC resistance becomes larger. Therefore, a material having high conductivity is required as the material of the contact pin. The Ni—Mn alloy has a problem that the transmission line has a large loss due to a large resistance and the signal is deteriorated.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has high toughness and toughness capable of coping with bending and repeated use. An object of the present invention is to provide a contact probe excellent in high-frequency characteristics and a method of manufacturing the same.

[0016]

The present invention has the following features to attain the object mentioned above. That is, in the contact probe according to claim 1, a plurality of pattern wirings are formed on the film, and each tip of these pattern wirings is arranged in a protruding state from the film to be a contact pin, and at least the A first metal layer made of a nickel-manganese alloy containing manganese in an amount of 0.05% by weight or more;
A second metal layer having higher toughness and conductivity than the first metal layer, wherein the second metal layer is bent at an intermediate position of the contact pin so that the second metal layer side faces outward. Is adopted.

In this contact probe, the first metal layer in contact with the measurement object has a manganese concentration of 0.05.
% Ni-Mn alloy, Hv35 even after heating at room temperature and high temperature, that is, even after heating at 500 ° C.
High hardness of 0 or more is obtained. Furthermore, since the second metal layer, which is higher in toughness than the first metal layer, is bent outside, the toughness outside the bent portion is higher than that of the case where the first metal layer is formed as a single layer. Thus, the occurrence of cracks and the like outside the bent portion is suppressed even at the time of bending and repeated use. Further, since the contact pin includes the second metal layer having higher conductivity than the first metal layer, a transmission line with less loss is formed as compared with the case where the contact pin is formed by a single first metal layer. Signal degradation can be suppressed. Here, as the second metal layer having higher toughness and conductivity than the Ni—Mn alloy having a manganese concentration of 0.05% by weight or more, for example, Cu (copper), Au (gold), Ag (silver) and The alloy is conceivable. Note that the first and second metal layers are
For example, if it is made by a plating technique, it is possible to easily form a plurality of layers in the thickness direction simply by changing the plating solution, and to form each metal layer separately, and then join (cladding) each other. Is also easy to fabricate.

In the contact probe according to the second aspect,
A contact probe in which a plurality of pattern wirings are formed on a film, and each tip of the pattern wirings is disposed so as to protrude from the film to be a contact pin.
A first metal layer made of a nickel-manganese alloy containing at least 05% by weight; and a second metal layer having higher toughness and conductivity than the first metal layer provided above and below the first metal layer in the thickness direction. And a metal layer which is bent at an intermediate position of the contact pin.

In this contact probe, a second metal layer is provided above and below the first metal layer in the thickness direction, and both upper and lower surface layers of the first metal layer become second metal layers. Therefore, signal deterioration can be further suppressed as compared with the contact probe according to the first aspect. That is,
Generally, a high-frequency signal flows near the surface of a contact pin (skin effect). Therefore, if both upper and lower surface layers of the first metal layer are formed of a highly conductive second metal layer,
High frequency characteristics are improved. In the present contact probe, the two second metal layers provided above and below the first metal layer, respectively, are both provided that they have higher toughness and conductivity than the first metal layer. Different materials may be used.

In the contact probe according to the third aspect,
A contact probe in which a plurality of pattern wirings are formed on a film, and each tip of the pattern wirings is disposed so as to protrude from the film to be a contact pin.
A first metal layer made of a nickel-manganese alloy containing at least 05% by weight, and a second metal layer provided to cover the periphery of the first metal layer and having higher toughness and conductivity than the first metal layer. And a metal layer, and a technique is employed in which the contact pin is bent at an intermediate position.

In this contact probe, the second metal layer is provided so as to cover the periphery of the first metal layer, and the entire surface of the contact pin is made of a highly conductive material.
It is more excellent in high frequency characteristics than the contact probe according to the second aspect.

In the contact probe according to the fourth aspect,
A contact probe in which a plurality of pattern wirings are formed on a film, and each tip of the pattern wirings is disposed so as to protrude from the film to be a contact pin.
A first metal layer made of a nickel-manganese alloy containing at least 05% by weight; and a second metal layer having higher toughness and conductivity than the first metal layer provided above and below the first metal layer in the thickness direction. The contact pin is bent toward the measurement object side in the thickness direction at an intermediate position of the contact pin, and the measurement object is measured in the thickness direction of the first metal layer. At the tip of the second metal layer provided on the side, a technique is employed in which a thin layer having a small thickness of the second metal layer is provided.

In this contact probe, the contact pin is bent toward the object to be measured in the thickness direction at an intermediate position of the contact pin, and the contact pin is bent in the thickness direction of the first metal layer. At the tip of the second metal layer provided on the object side, a thin layer having a small thickness of the second metal layer is provided. Is provided at a position corresponding to the contact portion with respect to Since the thickness is formed thin, the thin layer portion is scraped off by several uses, and the first metal layer inside is exposed. Thereby, the contact pin comes into contact with the object to be measured by the first metal layer, and can maintain a high hardness stably even after heating at a high temperature, and thus can cope with a large contact pressure. In this contact probe,
The tip portion of the contact pin bent toward the object to be measured The thin layer portion provided on the object to be measured is obliquely in contact with the contact surface of the object to be measured, so that the contact pressure is high and especially compared. The first metal layer is easily exposed due to the use of an extremely small number of times, or the first metal layer is slightly exposed from the beginning at the tip of the contact pin. Therefore, a large contact pressure can be dealt with immediately after fabrication, and a stable contact can be obtained. In addition, the contact pin of this contact probe is composed of three layers, has high surface conductivity, and has excellent high-frequency characteristics.
It is possible to cope with a high contact pressure and to satisfy both of the above two requirements.

In the contact probe according to the fifth aspect,
5. The contact probe according to claim 1, wherein the first metal layer has a manganese concentration of 1.5.
The technology set at less than weight percent is employed.

In this contact probe, when the Mn concentration exceeds 1.5% by weight, the stress of the contact pin increases, and there is a possibility that the contact pin may be bent, and the contact pin is very brittle and the toughness is greatly reduced. Therefore, by setting the Mn concentration of the first metal layer within the above range, appropriate toughness and hardness can be given to the first metal layer itself located inside the bent portion as a contact probe.

In the contact probe according to the sixth aspect,
The contact probe according to any one of claims 1 to 5, wherein a technique is employed in which a metal film is directly attached to the film.

In this contact probe, even if the film is, for example, a resin film or the like which easily expands by absorbing moisture, a metal film is directly attached to the film. Thereby, elongation of the film is suppressed. In other words, the distance between the contact pins is less likely to be shifted, and the tip portion is accurately and accurately contacted with the object to be measured. Therefore, it is possible to prevent damage or the like caused by the tip portion formed of the high-hardness first metal layer coming into contact with a place other than the terminal of the measurement object such as an IC chip or an LCD.

Further, the metal film can be used as a ground, thereby making it possible to design the impedance matching up to the vicinity of the tip of the contact probe. Can be prevented. That is, if the characteristic impedance between the board wiring side and the contact pin does not match in the middle of the transmission line from the tester called a prober, reflected noise will occur. In this case, the longer the transmission line with a different characteristic impedance is, the larger the reflected noise will be. There is a problem that occurs. Reflected noise causes signal distortion, and tends to cause malfunction at higher frequencies. In the present contact probe, by using the metal film as the ground, the deviation of the characteristic impedance from the substrate wiring side can be minimized to the vicinity of the contact pin tip, and the signal deterioration due to reflected noise can be suppressed. .

According to a seventh aspect of the present invention, there is provided a method for manufacturing a contact probe, wherein a plurality of pattern wirings are formed on a film, and the respective tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. A third metal layer forming step of forming a third metal layer of a material to be attached to or bonded to the material of the contact pin on the substrate layer, and forming a mask on the third metal layer. A plating process of forming a first metal layer and a second metal layer to be provided to the contact pins in a plurality of layers in the thickness direction by plating on the unmasked portion; Metal layer and second
A film applying step of applying the film covering the portion other than the portion provided to the contact pins on the metal layer, and a portion comprising the film, a first metal layer and a second metal layer, A separation step of separating the substrate layer and a portion made of a third metal layer,
A contact pin bending step of bending at a middle position thereof, wherein the plating step forms a first metal layer made of a nickel-manganese alloy having a manganese concentration set to 0.05% by weight or more. A first metal layer forming step, and a second metal layer forming step of forming a second metal layer having higher toughness and conductivity than the first metal layer,
The contact pin bending step employs a technique of bending the second metal layer side outward.

In this method of manufacturing a contact probe,
The two-layer structure of the first metal layer and the second metal layer is formed by the first metal layer forming step and the second metal layer forming step, and the contact pin bending step has a higher toughness than the first metal layer. Since the bending is performed with the high second metal layer side outward, the outside of the bent portion which is most stretched at the time of bending becomes a high toughness layer, so that stress due to bending is reduced and cracks are suppressed. Is done. Further, since the first and second metal layers are formed by plating, a two-layer structure can be easily formed in the thickness direction only by changing the plating solution. It is easier to fabricate than a body that is joined (cladded) after being formed into a body.

In the method of manufacturing a contact probe according to the present invention, a plurality of pattern wirings are formed on a film, and the tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. A third metal layer forming step of forming a third metal layer of a material to be attached to or bonded to the material of the contact pin on the substrate layer, and forming a mask on the third metal layer. A plating process of forming a first metal layer and a second metal layer to be provided to the contact pins in a plurality of layers in the thickness direction by plating on the unmasked portion; Metal layer and second
A film applying step of applying the film covering the portion other than the portion provided to the contact pins on the metal layer, and a portion comprising the film, a first metal layer and a second metal layer, A separation step of separating the substrate layer and a portion made of a third metal layer,
A contact pin bending step of bending at a middle position thereof, wherein the plating step forms a first metal layer made of a nickel-manganese alloy having a manganese concentration set to 0.05% by weight or more. Forming a first metal layer, and forming a second metal layer having higher toughness and conductivity than the first metal layer. The forming step is performed either before or after the first metal layer forming step and is performed in a state where a shielding plate is set on the mask at a position corresponding to the tip of the unmasked portion. A second metal layer forming first step of immersing in a plating bath forming a second metal layer to form a thin layer portion at the tip, and either the first or the second of the first metal layer forming step A second metal layer forming step performed in , The contact pin bending step, the second of the second metal layer side to bend in the inside techniques formed of a metal layer forming the first step is employed. In the present invention, the shielding plate is not limited to the case where the shielding plate is provided directly on the mask. That is, depending on the size and shape of the shielding plate, if the shielding plate is provided directly on the mask, a current may not flow through a shadowed portion of the mask and plating may not be performed. What is necessary is just to install by leaving about mm.

In this method of manufacturing a contact probe,
In the first step of forming the second metal layer, when plating is performed in a state where the shielding plate is installed on the mask at a position corresponding to the tip of the unmasked portion, immediately behind the shielding plate,
Since the ion flow becomes negative, the amount of ions reaching this portion is reduced, the amount of plating is suppressed, and the plating film thickness below the shielding plate is locally reduced. In particular, in the method of manufacturing the contact probe, since the place where the shielding plate is installed is at the tip of the unmasked portion, the current is more difficult to flow below the shielding plate, and the plating film thickness is reduced. Is further thinned or barely plated. By this step, a thin layer portion having a small thickness of the second metal layer is formed on the tip of the contact pin at the measurement object side. In this step, since only the shield plate is provided, the thin layer portion can be easily formed. The second
In the case where the first metal layer forming step is performed before the first metal layer forming step, in the subsequent first metal layer forming step, a normal plating process is performed with the shielding plate removed. Here, the plating solution for forming the first metal layer flows into the upper portion of the second metal layer formed in the first step of forming the second metal layer. Since the plating solution for forming the first metal layer has a uniform height, the thickness of the plating solution for forming the first metal layer at the upper portion of the thin layer portion is reduced by the thickness of the second metal layer. It gets thicker. After the first metal layer forming step, a second metal layer forming second step is performed. That is, the upper portion of the first metal layer is immersed in a plating bath for forming the second metal layer, and a normal plating process is performed. On the other hand, when the second metal layer forming first step is performed after the first metal layer forming step, the second metal layer forming second step and the first metal layer forming step are performed in the usual order. After forming a uniform film thickness by performing the plating process described above, a thin layer portion is formed at the front end portion by using the shielding plate in the second metal layer first step. Note that, also in the method of manufacturing the contact probe, the two second metal layers formed in the first step of forming the second metal layer and the second step of forming the second metal layer are both the first metal layer. Different materials may be used as long as they have higher toughness and conductivity than the metal layer.

[0033]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of a contact probe according to the present invention will be described below with reference to FIGS. In these figures, reference numeral 1 denotes a contact probe, 2 denotes a resin film, and 3 denotes a pattern wiring.

As shown in FIGS. 1 and 2, the contact probe 1 of this embodiment has a polyimide resin film 2
And has a pattern wiring 3 formed of metal on one surface of the resin film 2.
The tip of the pattern wiring 3 protrudes from an end of the resin film 2 (that is, each side of the central opening K) and serves as a contact pin 3a. At the rear end of the pattern wiring 3, a contact terminal 3b to be contacted with a contact pin on the tester side is formed.

The pattern wiring 3 has a first metal layer NM made of a Ni—Mn alloy,
It has a two-layer structure of a second metal layer AU made of u (gold). The first metal layer NM has a Mn concentration set in the range of 0.05% by weight to 1.5% by weight.

As shown in FIG. 2, the contact pin 3a has a second metal layer AU facing outward from the tip thereof toward the resin film 2 at an intermediate position V of a predetermined length. It is bent with the layer NM inside.

Next, with reference to FIG. 3, the steps of manufacturing the contact probe 1 will be described in the order of steps.

[Base Metal Layer Forming Step (Third Metal Layer Forming Step)] First, as shown in FIG. 3A, a base metal is formed on a stainless steel supporting metal plate 5 by Cu (copper) plating. A metal layer (third metal layer) 6 is formed.

[Pattern forming step] After a photoresist layer 7 is formed on the base metal layer 6, as shown in FIG. 3B, a predetermined pattern is formed on the photoresist layer 7 by photolithography. A photomask 8 is applied and exposed, and as shown in FIG.
Is developed to remove the portion to be the pattern wiring 3 and form an opening 7a in the remaining photoresist layer (mask) 7.

In the present embodiment, the photoresist layer 7 is formed of a negative photoresist, but the desired opening 7a is formed by employing a positive photoresist.
May be formed. In the present embodiment,
The photoresist layer 7 corresponds to a “mask” in the present invention. However, the “mask” in the claims of the present application is:
Like the photoresist layer 7 of the present embodiment, the present invention is not limited to the one in which the opening 7a is formed through the exposure and development steps using the photomask 8. For example, a hole is formed in advance in a portion to be plated (that is, in advance,
A film or the like (formed in a state indicated by reference numeral 7 in FIG. 3C) may be used. In the present invention, when such a film or the like is used as a “mask”, the pattern forming step in the present embodiment is unnecessary.

[Plating Step] Then, FIG.
As shown in FIG. 3, the pattern wiring 3 is formed in the opening 7a.
The first metal layer NM and the second metal layer AU to be formed are formed by electrolytic plating separately in a “first metal layer forming step” and a “second metal layer forming step”.

<Second Metal Layer Forming Step> First, a second metal layer AU made of Au (gold), which is tougher and more conductive than the first metal layer NM, is formed on the base metal layer 6. Form plating.

<First Metal Layer Forming Step> Further, on the second metal layer AU, nickel-manganese, which is a hard layer having a Mn concentration in the range of 0.05 to 1.5% by weight, is used. An alloy layer (first metal layer) NM is formed by plating and laminated. At this time, as an example of the composition of the plating solution in order to contain Mn, using a sulfamate Ni bath to which Mn sulfamate is added, controlling the amount of Mn in the plating solution and the current density when plating, The above Mn concentration is set. The thicknesses of the second metal layer AU and the first metal layer NM are appropriately set according to the height of the measurement frequency, the position and angle at which the first metal layer is bent, and the like. For the metal layer NM, the thickness of the second metal layer AU is set in the range of about several μm to about several tens μm.

After the plating process, the photoresist layer 7 is removed as shown in FIG.

[Film Adhering Step] Next, FIG.
As shown in FIG. 5, the resin film 2 is bonded to the first metal layer NM with an adhesive 2a other than the tip of the pattern wiring 3 shown in FIG. I do. This resin film 2 is a two-layer tape in which a metal film (copper foil) 500 is integrally provided on a polyimide resin PI. Before this film deposition step, the metal film 500 of the two-layer tape
Then, copper etching using photoengraving technology is applied to form a ground plane, and in this film deposition step,
The polyimide resin PI of the two-layer tape is adhered to the first metal layer NM via the adhesive 2a. The metal film 500 may be made of Ni, Ni alloy or the like in addition to the copper foil.

[Separation Step] Then, as shown in FIG. 3 (g), after the portion composed of the resin film 2, the pattern wiring 3 and the base metal layer 6 is separated from the supporting metal plate 5, Cu etching is performed. After that, only the pattern wiring 3 is adhered to the resin film 2.

[Gold Coating Step] Then, as shown in FIG.
(Gold) plating is applied to form an Au layer B on the surface. At this time, the Au layer B is formed on the entire surface of the contact pins 3a protruding from the resin film 2 over the entire circumference. Note that this Au layer B is the second metal layer A
It is thinner than U and is not always required in the present invention.

[Contact Pin Bending Step] After the above step,
Using a precision mold, the contact pins 3a are collectively bent so that the second metal layer AU side is outside, and as shown in FIG.
a is formed.

[Contact Pin Polishing Step] If the length (height) of the contact pins 3a is not uniform as a result of bending the contact pins 3a, the contact pins 3a are polished for uniformity. Polishing is performed by bringing sandpaper into contact with the bent end of the contact pin 3a while the contact pin 3a is fixed, and rotating the sandpaper in that state.

Through the above steps, the contact probe 1 in which the pattern wiring 3 is adhered to the resin film 2 as shown in FIGS. 1 and 2 is manufactured.

In the method of manufacturing the contact probe 1, a step of forming a high hardness layer (a step of forming a first metal layer) and a step of forming a highly tough and highly conductive layer (a step of forming a second metal layer)
As a result, a two-layer structure of the first metal layer NM and the second metal layer AU is formed, and in the contact pin bending step, the second metal layer AU having higher toughness than the first metal layer NM is folded outside. Since it is bent, the outside of the bent portion that is most stretched at the time of bending becomes the high toughness layer, so that the stress due to bending is reduced and the generation of cracks and the like is suppressed.

When the Mn concentration exceeds 1.5% by weight, the stress of the contact pin 3a is increased and the contact pin 3a may be curved, and the contact pin 3a is very brittle and the toughness is reduced. By setting the Mn concentration of the first metal layer NM within the above range, not only the second metal layer AU can maintain toughness but also the first metal layer NM itself can have appropriate toughness as a contact probe. And hardness.

In the contact probe 1, since the contact pin 3a has the second metal layer AU having higher conductivity than the first metal layer NM, the contact pin 3a is formed of a single first metal layer NM. As compared with the case, the loss in the transmission line can be reduced, and the deterioration of the signal can be suppressed when the test is performed in a high frequency range.

The first and second metal layers NM, AU
Since it is manufactured by plating technology, it is possible to easily form a plurality of layers in the thickness direction only by changing the plating solution. After forming each metal layer separately, the two are joined (cladded). There is an advantage that it is easier to manufacture than a product.

Next, an example in which the contact probe 1 is applied to a probe device used for a burn-in test or the like, that is, a so-called chip carrier, will be described with reference to FIGS. In these figures, reference numeral 10 denotes a probe device, 11 denotes a frame body, 12 denotes a positioning plate, 13
Denotes an upper plate, 14 denotes a clamper, and 15 denotes a lower plate. Note that the contact probe according to the present invention functions as a flexible substrate when incorporated in a probe device because the contact probe as a whole is flexible and easily bent.

As shown in FIGS. 4 and 5, the probe device 10 includes a frame main body 11, a positioning plate 12 fixed inside the frame main body and having an opening formed in the center.
The contact probe 1 includes an upper plate 13 for holding the contact probe 1 from above and supporting the same, and a clamper 14 for urging the upper plate 13 from above and fixing the upper plate 13 to the frame body 11. In addition, an IC
A lower plate 15 for mounting and holding the chip I is attached by bolts 15a.

The center opening K and the contact pin 3a of the contact probe 1 are formed in the shape and the shape of the IC chip I.
It is formed corresponding to the arrangement of the contact pads on the C chip I, and the contact state between the contact pins 3a and the contact pads of the IC chip I can be monitored from the central opening K. Notches are formed in the corners of the central opening K so that the contact probe 1 can be easily assembled.
Can be deformed.

The contact terminal 3 of the contact probe 1
b is set wider than the pitch of the contact pins 3a so that the contact pads of the IC chip I having a narrower pitch and the tester side contact pins having a wider pitch than the contact pads can be easily matched. .

Note that contact pads are not formed on all four sides of the IC chip I, and if the contact pads are arranged on some sides, at least the central opening K corresponding to at least some of the sides is formed. It is sufficient to provide the contact pins 3a only on the sides, but in order to stably hold the IC chip I, it is preferable to form the contact pins 3a on two opposing sides and press both opposing sides of the IC chip I. .

The procedure for attaching the IC chip I to the probe device 10 will be described. [Temporary Assembly Step] First, the positioning plate 12 is
And the contact probe 1
Are arranged so that the central opening K and the opening of the frame body 11 are aligned. Then, the upper plate 13 is placed on the central opening K with the openings similarly aligned, and the frame main body 1 is placed on the upper plate 13 from above.
1 is engaged with the clamper 14. Since the clamper 14 is a kind of leaf spring having a bent portion in the center, the clamper 14 has a function of pressing and fixing the upper plate 13 in the locked state.

In the above assembled state, an opening is provided at the center and the IC chip I is attached to this portion, so that the attached IC chip I can be observed from above the opening. The upper plate 13 and the clamper 14 are formed in a substantially rectangular shape on a plane, and the contact terminals 3 of the contact probe 1 are formed.
b are assembled so as to protrude outward from the respective long sides.

The lower surface of the upper plate 13 is inclined near the opening at a predetermined inclination angle, and as shown in FIG. 6, the contact pin 3a of the contact probe 1 is inclined downward at a predetermined angle. The IC chip I is placed on the lower plate 15 with the wiring side facing upward. In this state, the lower plate 15 is temporarily fixed to the frame main body 11 from below. At this time, since the distance between the tip of the contact pin 3a of the contact probe 1 and the upper surface of the lower plate 15 is set smaller than the thickness of the IC chip I by a predetermined amount, the IC chip I is sandwiched between the contact pin 3a and the lower plate 15. You.

[Positioning Step] Further, while observing the position of the contact pad of the IC chip I with respect to the tip of the contact pin 3a from above the opening, the positioning plate 12 is moved or the IC chip I is moved with a needle jig or the like. And fine adjustment is set so that the corresponding tip of the contact pin 3a and the contact pad coincide with each other and come into contact.

When the dicing accuracy of the IC chip I is high and the outer shape and the position of the contact pad are relatively stable, the positional relationship between the positioning plate 12 and the contact probe 1 is adjusted beforehand. By fixedly assembling, it is possible to match the contact pin 3a with the contact pad without performing the fine adjustment. Thus, the step of aligning the IC chip I becomes unnecessary, and the work of mounting the IC chip I can be performed efficiently and easily.

[Fixing Step] After the positioning step, the lower plate 15 is fully fixed to the frame body 11. At this time, so-called overdrive is applied to the contact pin 3a in the inclined state, and the contact pin 3a is pressed with a predetermined pressing force.
a The tip and the contact pad are in contact with each other to be reliably electrically connected. As a result, the operation state of the IC chip I, which is almost in the mounted state, can be tested with high reliability.

The probe device 10 is a small chip carrier of about 1 inch square (about 2.5 cm square), and is suitable for a reliability test involving high-temperature heating such as a dynamic burn-in test.

In the probe device 10 described above, the contact pin 3a of the contact probe 1 has a manganese concentration of 0.0
First metal layer NM of Ni-Mn alloy of 5% by weight or more
After heating at room temperature and high temperature, that is, 5
Even after heating at 00 ° C., high hardness of Hv350 or more can be obtained. Further, the contact pin 3a is connected to the first metal layer NM.
Since the second metal layer AU having higher toughness is provided, and the second metal layer AU is bent with the second metal layer AU outside, the first metal layer N
The toughness on the outside of the bent portion is higher than that of the case of being formed with a single M layer, and sufficient durability can be provided for repeated use.

Further, since the contact pin 3a includes the second metal layer AU having a higher conductivity than the first metal layer NM, the contact pin 3a has a larger thickness than the case where the contact pin 3a is formed of a single first metal layer NM. Loss in the transmission line can be reduced, and signal degradation can be suppressed when testing in a high frequency range.

In the first embodiment, Au (gold) is used as the material of the second metal layer AU. However, the present invention is not limited to this. In other words, the material of the second metal layer AU is more tough and more tough than the first metal layer NM, that is, a nickel-manganese alloy whose manganese concentration is set to 0.05% by weight or more and 1.5% by weight or less. It does not matter if the conductivity is high. For example,
In addition to Au, Ag (silver), Cu (copper) and alloys thereof can be considered.

However, when Cu is selected as the second metal layer AU, it is etched together with the base metal layer 6 at the time of Cu etching in the separation step. The AU is plated with Ni (nickel) or the like to form a protective film so as not to be etched by Cu, or the second metal layer AU is formed thicker in advance so that Cu etching is performed without any problem. Needs to be designed.

In the first embodiment, the contact probe 1 is applied to the probe device 10 as a chip carrier. However, the contact probe 1 may be applied to another measuring jig or the like.

Further, in the first embodiment,
In the thickness direction of the contact pin 3a, the second metal layer AU and the first metal layer NM have a two-layer structure, but instead of this configuration, as shown in FIG. The second metal layer AU may be formed over the entire circumference of the NM. In this case, the second metal layer AU is formed, for example, after forming the first metal layer NM having a thickness of about 20 μm.
The first metal layer NM is formed by applying gold (Au) plating having a thickness of, for example, about 10 μm to a predetermined thickness around the first metal layer NM. In this case, the Au layer B can be omitted.

In the modified example, since the entire surface layer of the first metal layer NM becomes the second metal layer AU having a constant thickness, the loss can be further reduced as compared with the contact probe 1 of the first embodiment. , A transmission line with less noise can be formed, and signal degradation can be suppressed. That is, since the high-frequency signal generally flows near the surface of the contact pin 3a, the first
The high-frequency characteristics can be improved by forming the second metal layer AU having high conductivity over a certain thickness of the surface layer over the entire circumferential direction of the metal layer NM.

In this modification, since the first and second metal layers NM and AU are formed by a plating technique, the first and second metal layers NM and AU are made of different materials so as to cover the entire periphery of the first metal layer NM. The second metal layer AU can be formed.
That is, in the method of joining (cladding) each metal layer after forming each metal layer separately, as in this modification,
It is difficult to create a structure that covers the periphery with different materials.

Next, as a second embodiment, a configuration in which the contact probe 16 according to the present invention is adopted as an IC probe and assembled into a mechanical part 60 to form a probe device (probe card) 70 will be described with reference to FIGS. This will be described with reference to FIG. In the case where the configuration is the same as that of the first embodiment, the same reference numerals are given and the detailed description is omitted.

FIGS. 8 and 9 show the contact probe 1.
FIG. 10 is a diagram showing an IC probe 6 cut out into a predetermined shape, and FIG. 10 is a cross-sectional view taken along line CC of FIG. 9.

Although the contact pin 3a (pattern wiring 3) has a two-layer structure in the first embodiment and its modifications, the present embodiment has a three-layer structure. That is, as shown in FIGS. 10 and 11, the pattern wiring 3 is formed of three layers of a first metal layer NM and two second metal layers AUa and AUb made of Au (gold). In the direction from the resin film 2 side in the
Metal layer AUa, first metal layer NM, second metal layer AU
b are provided respectively.

The second metal layers AUa and AUb are formed by a second metal layer A in a first step of forming a second metal layer described later.
Ub is manufactured, and the second metal layer AUa is manufactured in the second step of forming the second metal layer.

At the tip of the second metal layer AUb, there is formed a thin layer portion F in which the thickness of the second metal layer AUb is gradually reduced toward the tip.

The contact pin 3a is arranged such that the second metal layer AUa faces outward at a halfway position V of a predetermined length from the tip of the contact pin 3a toward the side opposite to the resin film 2, and the second metal layer AU
It is bent with b inside.

Next, a method of manufacturing the contact probe 16 will be described with reference to FIG. Since a step different from that of the first embodiment in the fabrication of the contact probe 16 is a plating step, it will be described below.

[Plating Process] The second metal layer AUb, the first metal layer NM, and the second metal layer AUa which become the pattern wiring 3 are formed in the openings 7a shown in FIG.
Are referred to as “second metal layer forming first step”, “first metal layer forming step”, and “second metal layer forming second step”, respectively.
And formed by electrolytic plating.

<First Step of Forming Second Metal Layer> After the opening 7 a is formed in the photoresist layer 7, first, a first step of forming a second metal layer is performed, and the first step of forming the second metal layer is performed on the base metal layer 6. The second metal layer AUb is formed with a predetermined thickness. That is, as shown in FIG. 12, a vinyl chloride plate (shielding plate) G is placed on the photoresist layer 7 at a position corresponding to the tip of the opening 7a. In this case, the vinyl chloride plate G is
In order to cover the upper ends of the plurality of openings 7a,
It is installed in a direction orthogonal to the extending direction of each opening 7a. Then, in this state, when the plating solution constituting the second metal layer AUb is caused to flow through the opening 7a, the flow of ions is obstructed below the vinyl chloride plate G, and the amount of ions reaching this portion is reduced. . As a result, the amount of plating adhesion is suppressed, and the plating film thickness below the vinyl chloride plate G is locally reduced. In particular, since the installation location of the vinyl chloride plate G is at the tip of the opening 7a, ions are less likely to flow below the vinyl chloride plate G, and the plating film thickness is further reduced, or almost completely. It will not be plated. That is, the number of ions reaching this portion decreases toward the tip of the opening 7a, so that the thickness of the second metal layer AUb gradually decreases toward the tip. Thereby, as shown in FIG. 11, the second metal layer A
At the tip of Ub, a thin layer portion F in which the thickness of the second metal layer AUb is gradually reduced is formed. In this step, since only the vinyl chloride plate G is provided on the photoresist layer 7,
The thin layer portion F can be easily formed. The shielding plate G is not limited to a vinyl chloride plate, but may be any non-conductive material, and its size is determined according to the length of the thin layer portion F and the like.

<Step of Forming First Metal Layer> Next, the second metal layer is formed.
A first metal layer NM is formed with a predetermined thickness on the metal layer AUb. That is, in this step, after the vinyl chloride plate G used in the first step of forming the second metal layer is removed, plating is performed as usual. Here, the plating solution for forming the first metal layer NM is formed by the second metal layer AUb.
, But in this case, the first metal layer NM
Is formed in the opening 7a at a uniform height. Therefore, in the upper part of the thin layer portion F, the first metal layer AUb is thinned by the thickness of the second metal layer AUb.
The thickness of the plating solution for forming the metal layer NM is thick (see FIG. 11).

<Second Step of Forming Second Metal Layer> Next to the step of forming the first metal layer, a second step of forming a second metal layer is performed.
Perform the process. That is, a plating solution for forming the second metal layer AUa is flowed over the first metal layer NM, and a normal plating process is performed.

In this embodiment, two second metal layers AUa and AU formed respectively in the first step of forming the second metal layer and the second step of forming the second metal layer are also used.
b may be different materials as long as both have higher toughness and higher conductivity than the first metal layer NM. For example, if only the second metal layer AUa is made of Cu, Au is used while avoiding the problem of Cu etching in the separation step (etching up to a part of the contact pin 3a together with the base metal layer 6). It can be manufactured at a lower cost compared to.

Through the above steps, the contact probe 16 having the three-layer contact pins 3a (pattern wirings 3) can be manufactured.

As shown in FIG. 9, the resin film 2 of the contact probe 16 has the contact probe 1
Alignment hole 2b for aligning and fixing 6
And a hole 2c, and a window 2 for transmitting a signal obtained from the pattern wiring 3 to the printed circuit board 20 (see FIG. 13) through a contact terminal 3b which is a drawing wiring.
d is provided.

The mechanical part 60 comprises a mounting base 30, a top clamp 40, and a bottom clamp 50, as shown in FIG. First, the top clamp 40 is mounted on the printed circuit board 20. Next, the mounting base 30 to which the contact probe 16 has been
Then, a bolt 42 is screwed into the first connector 1 (see FIG. 14). Then, by holding down the contact probe 16 with the bottom clamp 50, the pattern wiring 3 is maintained in a constant inclined state, the tip of the contact pin 3a bent downward is set at a predetermined angle, and the contact pin 3a is Press against IC chip.

FIG. 14 shows the probe device 70 after the assembly is completed.
Is shown. FIG. 15 is a sectional view taken along line EE of FIG. As shown in FIG. 15, the tip of the pattern wiring 3, that is, the contact pin 3a is connected to the mounting base 30.
Is in contact with the IC chip I.

The mounting base 30 is provided with a positioning pin 31 for adjusting the position of the contact probe 16. By inserting the positioning pin 31 into the positioning hole 2 b of the contact probe 16, a pattern is formed. The wiring 3 and the IC chip I can be accurately positioned. The elastic body 51 of the bottom clamp 50 is pressed against the pattern wiring 3 in the portion of the window 2 d provided in the contact probe 16 to bring the contact terminal 3 b into contact with the electrode 21 of the printed circuit board 20. Signal 21
Can be communicated to the outside.

The probe device 70 configured as described above
When performing a probe test or the like of the IC chip I using the probe device 70, the probe device 70 is inserted into the prober and electrically connected to the tester, and a predetermined electric signal is transmitted from the contact pins 3a of the pattern wiring 3 to the wafer. By sending the signal to the IC chip I, the output signal from the IC chip I is transmitted from the contact pin 3a to the tester, and the electrical characteristics of the IC chip I are measured.

In the contact probe 16 and the probe device 70 incorporating the same, as in the first embodiment, the contact pin 3a has a manganese concentration of 0.05 to 0.05.
A first metal layer NM that is a Ni—Mn alloy in a range of 1.5% by weight, and a second metal layer AUa having a higher toughness than the first metal layer NM, and the second metal layer AUa side Is bent outward, so that the toughness of the bent portion and the high hardness of the contact pin 3a as a whole (Hv 350 or more)
Is obtained.

Further, second metal layers AUa and AUb having higher conductivity than the first metal layer NM are provided above and below the first metal layer NM in the thickness direction, respectively. Since both surface layers have high conductivity, it is possible to form a transmission line with less loss compared to the first embodiment,
Signal degradation can be suppressed.

Further, the contact pin 3a is bent toward the measuring object I in the thickness direction at an intermediate position V thereof, and the contact pin 3a has a tip portion of the second metal layer AUb on the measuring object I side. Is provided with a thin layer portion F, and the thin layer portion F comes into contact with the measurement object I. Since the thickness is formed thin, the thin layer portion F is scraped off by several uses, and the first metal layer NM inside is exposed. Thereby, the contact pin 3a comes into contact with the object to be measured I by the first metal layer NM, and can maintain a high hardness stably even after heating at a high temperature. Can be.

The thin layer portion F provided at the tip of the contact pin 3a bent toward the measuring object I is obliquely in contact with the contact surface of the measuring object I. The first metal layer NM is easily exposed by using a relatively small number of times, or the first metal layer NM is slightly exposed from the beginning at the tip of the contact pin 3a. Therefore, a large contact pressure can be dealt with immediately after fabrication, and a stable contact can be obtained. It is an advantage of the plating technique that the thickness of the metal layer can be gradually reduced like the thin layer portion F, which is extremely difficult by the cladding method.

Next, referring to FIG. 16 to FIG.
An embodiment will be described. In the present embodiment, the contact probe 16 cut into a predetermined shape for an IC probe in the second embodiment is used by cutting into a predetermined shape of an LCD probe instead. The contact probe cut into the LCD probe is shown in FIG.
18 to FIG. 18, reference numeral 200 denotes a resin film.

As shown in FIG. 19, the LCD probe device 100 has a structure in which a contact probe holding member 110 is fixed to a frame frame 120. Contact pins protruding from the contact probe holding member 110 are provided. The tip of 3a comes into contact with a terminal (not shown) of an LCD (liquid crystal display) 90.

As shown in FIG. 18, the contact probe holding body 110 has a top clamp 111 and a bottom clamp 115. The top clamp 111 is provided with a first projection 112 for holding the tip of the contact pin 3a.
Second protrusion 11 for holding terminal 301 on ABIC 300 side
3 and a third projection 114 for holding the lead. The bottom clamp 115 includes the inclined plate 116 and the mounting plate 1.
17 and a bottom plate 118.

[0100] The contact probe 200 is
And the terminals 301 of the TABIC 300 are connected to the resin films 201 and 20 of the contact probe 200.
Place it so that it is located between the two. Thereafter, the top clamp 111 is mounted on the resin film 201 such that the first protrusion 112 is on the resin film 201 and the second protrusion 113 is in contact with the terminal 301, and is assembled with a bolt.

As shown in FIG. 20, the contact probe 200 is assembled, and the top clamp 111 and the bottom clamp 115 are combined with the bolt 130, whereby the contact probe holding body 110 is manufactured.

The contact probe holding body 110 is
As shown in FIG.
Assembled in the CD probe device 100. In order to perform an electrical test of the LCD 90 using the LCD probe device 100, the contact pins 3 a of the LCD probe device 100 are obtained from the contact pins 3 a with the tips of the contact pins 3 a being in contact with the terminals (not shown) of the LCD 90. This is performed by taking out the output signal through the TABIC 300 to the outside.

In the above-described LCD probe device 100, L
The contact pins 3a to be brought into contact with the terminals of the CD 90 are composed of a first metal layer NM having the same manganese concentration as in the first and second embodiments, and a first metal layer NM.
And a second metal layer AU having higher toughness and conductivity than the second metal layer AU. The second metal layer AU is bent with the second metal layer AU side outside, so that the toughness of the bent portion and the high contact pin 3a as a whole are high. Hardness (Hv 350 or more) is obtained.

Next, a fourth embodiment will be described with reference to FIGS. As shown in FIG. 22, since the resin film 201 of the contact probe 200 described in the third embodiment is made of, for example, a polyimide resin, it absorbs moisture and elongates, so that the area between the contact pins 3a, 3a is increased. The interval t sometimes changed. This makes it impossible for the contact pins 3a to come into contact with the predetermined positions of the terminals of the LCD 90, and there is a problem that an accurate electrical test cannot be performed.

Therefore, in the fourth embodiment, as shown in FIG.
00 and the contact pin 3 even if the humidity changes
The change in the interval t between the contact pins 3a and 3a is reduced, whereby the contact pins 3a are reliably brought into contact with the predetermined positions of the terminals of the LCD 90.

That is, displacement of each contact pin 3a is less likely to occur, and the tip is accurately and accurately contacted with the terminal of the LCD 90. Therefore, it is possible to prevent damage or the like caused by contact of the contact pins 3a formed of the high hardness first metal layer NM with places other than the terminals of the LCD 90. The metal film 500
Is preferably one of Ni, a Ni alloy, Cu, and a Cu alloy, which are conductors.

Next, a fifth embodiment will be described with reference to FIGS. 24 and 25. The difference between the fifth embodiment and the first embodiment is that, in the probe device 10 of the first embodiment, the IC chip I is located below the contact probe 1, whereas the probe device 700 of the fifth embodiment is different. The point is that the IC chip I is located above the contact probe 701.

That is, the probe device 700 includes a frame main body 711, a positioning plate 712 fixed to the inside of the frame main body 711, and having a rectangular opening formed in the center and an inclined surface inclined upward around the opening. A contact probe 701 disposed on the positioning plate 712, an upper plate 713 for supporting the contact probe 701 by pressing it from above, and a clamper 714 for urging the upper plate 713 from above and fixing it to the frame body 711. And In the probe device 700, the IC chip I is disposed above the contact probe 701, that is, between the tip of the contact pin 3a bent upward and the upper plate 713.

Further, the pattern wiring 3 and the contact pin 3a of the contact probe 1 in the first embodiment
Is configured such that the first metal layer NM is disposed on the resin film 2 side, whereas the pattern wiring 3 and the contact pin 3a of the contact probe 701 in the fifth embodiment are the second metal layer NM on the resin film 2 side. In that the metal layer AU is arranged.

That is, in the plating process in the manufacturing process of the contact probe 701, first, a first metal layer NM to be a high hardness layer is formed by plating on the base metal layer, and then the first metal layer NM is formed. The second metal layer AU having higher toughness and conductivity is formed.

Further, the contact pin 3a is located at an intermediate position of a predetermined length from the tip thereof toward the side opposite to the resin film 2 side (IC chip I side), that is, with the second metal layer AU side facing outward. Is folded.

[0112]

In the electroplating step of forming the pattern wiring and contact pins of the contact probe in each of the above embodiments, the plating conditions of the first metal layer are as follows:
It was determined based on the following test results.

The plating solution for adding Mn to Ni is obtained by adding Mn sulfamate to a Ni sulfamate bath. Therefore, the first metal layer was plated under the following conditions because the current density depends on the current density. Mn amount: 20 to 35 g / l Current density: 1 to 10 A / dm ²

The reason why the plating conditions for the first metal layer were set within the above range is that when the amount of Mn is less than 20 g / l and the current density is less than 1 A / dm ² , the Mn concentration in the film is small and the desired hardness cannot be obtained. Not available, 35 g / l and 10
If the ratio exceeds A / dm ² , the Mn concentration increases, the stress of the plating film increases, and the film itself becomes very brittle.

The plating process may be performed not only with sulfamic acid but also with a nickel sulfate bath as a base. However, the plating process with the nickel sulfamate bath reduces the stress as compared with the nickel sulfate bath. effective. Table 1 below shows the experimental results of the Mn concentration and the hardness before and after the heat treatment when the current density was changed when the amount of Mn was constant (30 g / l). FIG. 26 shows the relationship between the Mn concentration and the hardness.

[0116]

[Table 1]

The case where the contact pin is composed of a single material consisting of only the first metal layer and the second metal layer only, the first metal layer (high hardness layer) and the second metal layer (high toughness layer) Table 2 shows comparative data on toughness in the case of the two-layer structure. Here, a Ni-Mn alloy having a manganese concentration of 0.4% by weight was taken as an example of the first metal layer, and Cu was taken as an example of the second metal layer. Table 2 shows the results of a 90-degree bending test of the prototype contact pin.
This figure shows the number of cycles required for the pin to be broken, with the operation of returning the contact pin after bending by 90 degrees as one cycle. As can be seen from Table 2, the second metal layer has better toughness than the first metal layer, and the two-layer structure has a higher toughness than the first metal layer single layer. Has excellent toughness.

[0118]

[Table 2]

[0119]

According to the contact probe of the first aspect, the first metal layer in contact with the object to be measured is a Ni-Mn alloy having a manganese concentration of 0.05% by weight or more. Even after heating, that is, even after heating at 500 ° C., a high hardness of Hv 350 or more can be obtained.
Furthermore, since the second metal layer, which is higher in toughness than the first metal layer, is bent outside, the toughness outside the bent portion is higher than that of the case where the first metal layer is formed as a single layer. Become
The occurrence of cracks and the like outside the bent portion can be suppressed even during bending and repeated use. Further, since the contact pin includes the second metal layer having higher conductivity than the first metal layer, the loss in the transmission line is reduced as compared with the case where the contact pin is formed of a single first metal layer. Therefore, when testing in a high frequency range, signal degradation can be suppressed.

According to the contact probe of the second aspect, the second metal layer is provided above and below the first metal layer in the thickness direction, and both the upper and lower surface layers of the first metal layer are the second metal layer. Since the second metal layer is used, a transmission line with less loss can be formed as compared with the contact probe according to the first aspect, and signal deterioration can be suppressed.

According to the contact probe of the third aspect, the second metal layer is provided so as to cover the periphery of the first metal layer, and the entire surface of the contact pin is made of a material having high conductivity. As compared with the contact probe according to claim 2, more excellent high-frequency characteristics can be obtained.

According to the contact probe of the fourth aspect, the contact pin is bent toward the measurement object side in the thickness direction at an intermediate position thereof, and the contact pin is provided on the measurement object side. Since the thin layer portion is provided at the tip of the metal layer, the thin layer portion is disposed at a position corresponding to the contact portion with the measurement target, and is formed to be thin. After several uses, the thin layer portion is scraped off, exposing the first metal layer therein. This allows the contact pin to contact the object to be measured with the first metal layer, stably maintain high hardness even after heating at a high temperature, and cope with a large contact pressure. Further, since the thin layer portion is obliquely in contact with the contact surface of the object to be measured, a local contact pressure is high, and the thin layer portion is more easily shaved. Is easily exposed, or the first metal layer is slightly exposed from the beginning at the foremost part of the contact pin, so that it can cope with a large contact pressure immediately after fabrication and obtain a stable contact. it can.

According to the contact probe of the fifth aspect, in the contact probe of any one of the first to fourth aspects, the manganese concentration of the first metal layer is set to 1.5% by weight or less. Therefore, there is no possibility that the stress of the contact pin increases and the contact pin bends, and the first metal layer located inside the bent portion itself can be given appropriate toughness and hardness as a contact probe.

According to the contact probe of the present invention, even if the film is, for example, a resin film which absorbs moisture and easily expands, a metal film is provided directly on the film. Therefore, the elongation of the film is suppressed by the metal film. In other words, the distance between the contact pins is less likely to be shifted, and the tip portion is accurately and accurately contacted with the object to be measured. Therefore, the measurement target IC chip or LC
Damage or the like caused by the tip portion formed of the high hardness first metal layer abutting on a place other than the terminal such as D can be prevented. Furthermore, the metal film can be used as a ground, thereby enabling impedance matching to be performed near the tip of the contact probe and preventing adverse effects due to reflected noise even when performing a test in a high frequency range. it can.

According to the method of manufacturing a contact probe of the present invention, the first metal layer forming step and the second metal layer forming step form a two-layer structure of the first metal layer and the second metal layer. In the contact pin bending step, the second metal layer, which is higher in toughness than the first metal layer, is bent outside, so that the outside of the bent portion that is most stretched at the time of bending becomes the high toughness layer. Accordingly, the stress due to bending can be reduced and the occurrence of cracks and the like can be suppressed. Further, since the first and second metal layers are formed by plating,
By simply changing the plating solution, a two-layer structure can be easily formed in the thickness direction, and it is easier to manufacture than a single metal layer formed separately and then joined (cladded). can get.

According to the method for manufacturing a contact probe according to the eighth aspect, in the first step of forming the second metal layer, a shielding plate is provided on a mask corresponding to a tip portion of the unmasked portion, The flow of ions at the time of electrolytic plating is hindered, and the plating film thickness is reduced or almost no plating is performed, and a thin layer portion is formed at the tip of the contact pin. In this method, since only the shield plate is provided, the thin layer portion can be easily formed.

[Brief description of the drawings]

FIG. 1 is an enlarged schematic view showing a first embodiment of a contact probe according to the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a fragmentary cross-sectional view showing a method of manufacturing the contact probe according to the first embodiment of the present invention in the order of steps.

FIG. 4 is an exploded perspective view of a probe device (chip carrier) in the first embodiment of the contact probe according to the present invention.

FIG. 5 is an external perspective view of a probe device (chip carrier) in the first embodiment of the contact probe according to the present invention.

FIG. 6 is an enlarged cross-sectional view taken along line BB of a main part of FIG. 5;

FIG. 7 is an enlarged front sectional view showing a modified example of the first embodiment of the contact probe according to the present invention.

FIG. 8 is a perspective view showing a main part of a second embodiment of the contact probe according to the present invention.

FIG. 9 is a plan view showing a second embodiment of the contact probe according to the present invention.

FIG. 10 is a sectional view taken along line CC of FIG. 9;

FIG. 11 is an enlarged view of a main part of FIG. 10;

FIG. 12 is a plan view showing a plating step in a second embodiment of the contact probe according to the present invention.

FIG. 13 is an exploded perspective view showing an example of a probe device incorporating a second embodiment of the contact probe according to the present invention.

FIG. 14 is a perspective view of an essential part showing an example of a probe device incorporating a second embodiment of the contact probe according to the present invention.

FIG. 15 is a sectional view taken along line EE of FIG. 14;

FIG. 16 is a perspective view showing a contact probe in a third embodiment of the probe device according to the present invention.

FIG. 17 is a sectional view taken along line JJ of FIG. 16;

FIG. 18 is an exploded perspective view showing a contact probe holding body in a third embodiment of the probe device according to the present invention.

FIG. 19 is a perspective view showing a third embodiment of the probe device according to the present invention.

FIG. 20 is a perspective view showing a contact probe holding body in a third embodiment of the probe device according to the present invention.

FIG. 21 is a sectional view taken along line XX of FIG. 19;

FIG. 22 is a view in the direction of arrow D in FIG. 16 relating to a fourth embodiment of the contact probe according to the present invention.

FIG. 23 is a side view showing a fourth embodiment of the contact probe according to the present invention.

24A and 24B show a probe device (chip carrier) according to a fifth embodiment of the contact probe according to the present invention, wherein FIG. 24A is an external perspective view, and FIG. It is an L line sectional view.

FIG. 25 is an exploded perspective view of a probe device (tip carrier) in a fifth embodiment of the contact probe according to the present invention.

FIG. 26 is a graph showing the relationship between Mn concentration and hardness at the tip of the contact probe according to the present invention.

FIG. 27 is an enlarged sectional view of a main part showing a conventional example of a contact probe according to the present invention.

[Explanation of symbols]

 1,16,701 Contact probe 2 Resin film 3 Pattern wiring 3a Contact pin 10,700 Probe device 90 LCD (measurement target) 100 Probe device 200 Contact probe 201 Resin film 500 Metal film AU Second metal layer AUa Second Metal layer AUb Second metal layer G Vinyl chloride plate (shielding plate) I IC chip (object to be measured) NM First metal layer PI Polyimide resin V Intermediate position

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hayato Sasaki Techno Park Twelve-No. 6 Mita Plant, Mita City, Hyogo Prefecture

Claims (8)

[Claims] 1. A contact probe in which a plurality of pattern wirings are formed on a film, and the tips of the pattern wirings are arranged so as to protrude from the film and serve as contact pins, wherein at least the contact pins are made of manganese. 0.05
A first metal layer made of a nickel-manganese alloy containing at least 1% by weight, and a second metal layer having higher toughness and conductivity than the first metal layer. A contact probe bent with the second metal layer side facing outward. 2. A contact probe, wherein a plurality of pattern wirings are formed on a film, and each tip of the pattern wirings is arranged in a protruding state from the film to be a contact pin, and at least the contact pin contains manganese. 0.05
A first metal layer made of a nickel-manganese alloy containing at least 1% by weight, and a second metal layer having higher toughness and conductivity than the first metal layer provided above and below the first metal layer in the thickness direction, respectively. A contact probe comprising a metal layer and being bent at an intermediate position of the contact pin. 3. A contact probe, wherein a plurality of pattern wirings are formed on a film, and each tip of the pattern wirings is arranged in a protruding state from the film to serve as a contact pin, and at least the contact pin contains manganese. 0.05
A first metal layer made of a nickel-manganese alloy containing at least 1% by weight; and a second metal having higher toughness and conductivity than the first metal layer provided so as to cover the periphery of the first metal layer. A contact probe, wherein the contact probe is bent at an intermediate position of the contact pin. 4. A contact probe in which a plurality of pattern wirings are formed on a film, and each tip of the pattern wirings is arranged in a protruding state from the film to be used as a contact pin, and at least the contact pin contains manganese. 0.05
A first metal layer made of a nickel-manganese alloy containing at least 1% by weight, and a second metal layer having higher toughness and conductivity than the first metal layer provided above and below the first metal layer in the thickness direction, respectively. A metal layer, and is bent toward the measurement object side in the thickness direction at an intermediate position of the contact pin, and the measurement object side in the thickness direction of the first metal layer. A contact probe, characterized in that a thin layer portion having a small thickness of the second metal layer is provided at an end of the second metal layer. 5. The contact probe according to claim 1, wherein the manganese concentration of the first metal layer is set to 1.5% by weight or less. 6. The contact probe according to claim 1, wherein a metal film is directly attached to the film. 7. A method for manufacturing a contact probe, wherein a plurality of pattern wirings are formed on a film, and the tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. A third metal layer forming step of forming a third metal layer of a material to be adhered to or bonded to the material of the contact pin; and applying a mask on the third metal layer, A plating step of forming the first metal layer and the second metal layer provided for the contact pins into a plurality of layers in the thickness direction by plating; a first metal layer and a second metal layer from which the mask has been removed A film covering step of covering the film covering a portion other than a portion provided for the contact pin on the film, and comprising the film, a first metal layer and a second metal layer. And a separating step of separating the substrate layer and the portion made of the third metal layer from each other, and a contact pin bending step of bending the contact pin at an intermediate position thereof. In the process, the manganese concentration is 0.05% by weight.
The first made of the nickel-manganese alloy set above
Forming a first metal layer by forming a first metal layer;
A second metal layer forming step of forming a second metal layer having higher toughness and conductivity than the metal layer of (a), wherein the contact pin bending step is performed with the second metal layer side outward. A method of manufacturing a contact probe. 8. A method of manufacturing a contact probe, wherein a plurality of pattern wirings are formed on a film, and the tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. A third metal layer forming step of forming a third metal layer of a material to be adhered to or bonded to the material of the contact pin; and applying a mask on the third metal layer, A plating step of forming the first metal layer and the second metal layer provided for the contact pins into a plurality of layers in the thickness direction by plating; a first metal layer and a second metal layer from which the mask has been removed A film covering step of covering the film covering a portion other than a portion provided for the contact pin on the film, and comprising the film, a first metal layer and a second metal layer. And a separating step of separating the substrate layer and the portion made of the third metal layer from each other, and a contact pin bending step of bending the contact pin at an intermediate position thereof. In the process, the manganese concentration is 0.05% by weight.
The first made of the nickel-manganese alloy set above
Forming a first metal layer by forming a first metal layer;
Forming a second metal layer having higher toughness and conductivity than the second metal layer.
The metal layer forming step is performed either before or after the first metal layer forming step, and a shielding plate is provided on the mask at a position corresponding to the tip of the unmasked portion. A second metal layer forming first step of immersing in a plating bath forming the second metal layer in the state to form a thin layer portion at the tip, and a step before or after the first metal layer forming step. A second metal layer formation second step performed on one of the other sides, wherein the contact pin bending step is such that the second metal layer side formed in the second metal layer formation first step is on the inside. And manufacturing the contact probe.