JP3219008B2 - Contact probe, method of manufacturing the same, and probe device provided with the contact probe - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used as a probe pin, a socket pin, or the like, and is incorporated in a probe card, a test socket, or the like, and contacts each terminal of a semiconductor IC chip, a liquid crystal device, or the like to perform an electrical test. And a method of manufacturing the same, and a probe device including the contact probe.

[0002]

2. Description of the Related Art In general, a contact pin is used to conduct an electrical test by contacting a semiconductor chip such as an IC chip or an LSI chip or each terminal of an LCD (liquid crystal display). In recent years, as the integration and miniaturization of IC chips and the like have increased, the pitch of contact pads, which are electrodes, has been reduced, and the pitch of contact pins has been required to be narrower. However, with a tungsten needle contact probe used as a contact pin, it has been difficult to cope with a multi-pin narrow pitch due to the limitation of the diameter of the tungsten needle.

On the other hand, for example, Japanese Patent Publication No. 7-820
No. 27 proposes a contact probe technique in which a plurality of pattern wirings are formed on a resin film, and the ends of these pattern wirings are arranged so as to protrude from the resin film and serve as contact pins. In this technical example, the tip of each of the plurality of pattern wirings is used as a contact pin, thereby achieving a narrow pitch with a large number of pins.
This eliminates the need for many complicated components.

In the above-described contact probe, the amount of pressing of the contact pin is increased or decreased in order to obtain a desired contact pressure during a test. However, a large amount of pressing is required to obtain a large contact pressure. However,
The above contact probe has a tip portion of the pattern wiring,
That is, since the contact pin is formed of Ni (nickel), the hardness is only about Hv300, and the contact pin is bent or deformed due to excessive contact pressure due to low hardness, so that the pressing amount is reduced. And the contact pressure was not large. As a result, a contact pressure sufficient for electrical measurement cannot be obtained, causing a contact failure.

As a countermeasure, there is a method of adding an additive such as saccharin when forming Ni by plating. In this case, it is possible to maintain a hardness of Hv 350 or more at room temperature. Since S (sulfur) is contained in such additives, when heated at a high temperature, for example, at 300 ° C., there is an inconvenience that the hardness rapidly decreases to Hv 200 or less. For this reason, when the above-mentioned contact probe is sometimes put at a high temperature, it cannot be used particularly for a chip carrier for a burn-in test or the like.

Therefore, a contact probe made of a nickel-manganese (Ni-Mn) alloy has been proposed which has improved hardness and also has heat resistance and can stably maintain high hardness even after heating at a high temperature.

The surface of each terminal (pad) of an IC chip or the like formed of an Al (aluminum) alloy or the like is oxidized in the air, and is in a state of being covered with a thin aluminum surface oxide film. I have. Therefore, in order to conduct an electrical test of the pad, it is necessary to secure the conductivity by exfoliating the surface oxide film of aluminum on the surface and exposing the aluminum inside.

Therefore, in the above-mentioned contact probe, the contact pin is brought into contact with the surface of the pad and is overdriven (the contact pin is brought down after contact with the pad) so that the tip of the contact pin is brought down. The surface oxide film of aluminum on the surface of the pad is scraped off to expose the aluminum inside. The above-mentioned operation is performed by scrubbing.
It is called b) and is important for ensuring electrical testing.

In the above contact pins, in order to prevent the base of the pad from being damaged during scrubbing, it is necessary to ensure a sufficient contact angle of the contact pin with the pad. The reason for this is that if the contact angle is small, the amount of aluminum rejected on the surface becomes extremely large, which affects the pad base.

As a countermeasure, as shown in FIG. 40, a contact probe 601 bent at an intermediate position V of a contact pin 600 has been proposed. In the contact probe 601, the angle of the contact pin 600 with respect to the object to be measured (pad) can be changed between the distal end portion and the proximal end portion, and the angle of the contact pin 600 with respect to the pad at the proximal end portion, that is, the pad of the film 602. It is possible to increase the angle (contact angle) between the tip of the contact pin 600 and the pad without increasing the angle with respect to. That is, the contact probe 601 has an advantage that the base of the pad can be prevented from being damaged during the scrub without increasing the scrub distance excessively and without increasing the height of the probe device. .

[0011]

The contact probe 601 having the bent contact pin 600 has the following features.
When the above-described contact pin made of the Ni—Mn alloy is employed, as shown in FIG.
Is bent at the middle position V, cracks or breaks may occur outside the bent portion. Further, even if no cracks or the like are generated at the time of bending, there is a possibility that a crack or the like may be generated outside the bent portion by repeated use. The cause is that in the contact probe made of the Ni-Mn alloy, Mn must be contained in a certain concentration or more in order to improve the hardness, but in this case, the toughness of the contact pin is reduced, and the contact pin is bent at the time of bending. This is because cracks and the like occur because the outside of the portion is stretched most.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has as its object to provide a contact probe which suppresses a crack or the like at a bent portion in bending, a method of manufacturing the same, and a probe device having the contact probe. And

[0013]

The present invention has the following features to attain the object mentioned above. That is, in the contact probe according to claim 1, a plurality of pattern wirings are formed on a film, and each tip of the pattern wirings is arranged in a protruding state from the film to be a contact pin, and the contact probe is used as a contact pin. The pin employs a technique in which notches are formed on both side surfaces at an intermediate position, and the pin is bent in the thickness direction at the intermediate position.

In this contact probe, notches are formed on both side surfaces of the contact pin at an intermediate position, and the contact pin is bent in the thickness direction at the intermediate position. On the inner side, the notch serves as an escape portion for plastic deformation and serves as an easily deformable portion, so that the stress is dispersed and relaxed. Along with this, the stress itself that stretches the outside of the bent portion due to the compressive stress inside the bent portion is also reduced at the same time, so that cracks and the like at the bent portion are suppressed. In addition, since the bent portion due to the bending is always formed at the intermediate position where the cutout portion is formed, the bending position can be accurately obtained, and the length from the intermediate position to the tip of the contact pin can be accurately determined. As a result, height variations of the contact pins can be suppressed.

In the contact probe according to the second aspect,
2. The contact probe according to claim 1, wherein at least the contact pins are formed of a nickel-manganese alloy, wherein the nickel-manganese alloy contains 0.1% of manganese.
Techniques are employed that are included in the range of 05% to 1.5% by weight.

In this contact probe, the contact pins are formed of a nickel-manganese alloy containing manganese in the range of 0.05% by weight to 1.5% by weight. Even after heating at a high temperature, for example, at 500 ° C., it has a hardness of Hv 350 or more. That is, the hardness of the Ni—Mn alloy does not extremely decrease even by heating at a high temperature. further,
If the amount of manganese (Mn) is less than 0.05% by weight, Hv3
If the hardness is not higher than 50 and exceeds 1.5% by weight,
Since the stress of the contact pin increases and there is a possibility that the contact pin may be curved, and it is very brittle and the toughness is reduced.
By setting the Mn content within the above range, high hardness and toughness required as a contact probe can be obtained. In particular, since high hardness and high toughness can be obtained even at the bent portion, the occurrence of cracks and the like outside the bent portion is suppressed even at the time of bending and repeated use.

In the contact probe according to the third aspect,
2. The contact probe according to claim 1, wherein the contact pins have a high manganese alloy layer having a manganese concentration of 0.05% by weight or more and a low manganese alloy layer having a manganese concentration lower than the high manganese alloy layer. And a technique is employed in which the low manganese alloy layer is bent outward at the intermediate position.

In this contact probe, the high manganese alloy layer is made of Ni--Mn having a manganese concentration of 0.05% by weight or more.
Since it is an alloy, after heating at room temperature and high temperature,
Even after heating at 0 ° C., a high hardness of Hv 350 or more can be obtained. Furthermore, since it is bent with the low manganese alloy layer side formed of a Ni-Mn alloy having a lower manganese concentration than the high manganese alloy layer facing outside, compared to the case of forming a single high manganese alloy layer The toughness outside the bent portion is increased, and the occurrence of cracks and the like outside the bent portion is further suppressed in combination with the effect of the cutout portion.

In the contact probe according to the fourth aspect,
The contact probe according to any one of claims 1 to 3, wherein a technique is employed in which a metal film is directly attached to the film.

In this contact probe, even if the film is, for example, a resin film which easily absorbs moisture and stretches, a metal film is directly attached to the film. Thereby, elongation of the film is suppressed. That is, the gap between the contact pins is less likely to be shifted, and together with the accurate bending position by the notch, the tip can accurately and accurately contact the object to be measured. Furthermore, the metal film can be used as a ground, thereby enabling impedance matching to be performed near the tip of the contact probe and preventing adverse effects due to reflected noise even when performing a test in a high frequency range. it can. That is, if the characteristic impedance between the board wiring side and the contact pin does not match in the middle of the transmission line from the tester called a prober, reflected noise will occur. In this case, the longer the transmission line with a different characteristic impedance is, the larger the reflected noise will be. There is a problem that occurs. Reflected noise causes signal distortion, and tends to cause malfunction at higher frequencies. In the present contact probe, by using the metal film as the ground, the deviation of the characteristic impedance from the substrate wiring side can be minimized to the vicinity of the contact pin tip, and the malfunction due to the reflection noise can be suppressed.

In the contact probe according to the fifth aspect,
The contact probe according to claim 4, wherein a technique is employed in which a second film is directly attached to the metal film.

In this contact probe, since the second film is directly attached to the metal film, when the wiring substrate is disposed above the metal film, the pattern on the substrate side of the wiring substrate may be used. Since the wiring and other wiring do not directly contact the metal film, a short circuit can be prevented. In addition, if the metal film is simply attached on the resin film and the metal film is exposed, the oxidation proceeds in the air because the metal film is exposed. Coating the film to prevent its oxidation.

According to a sixth aspect of the present invention, in the probe device, the contact probe according to any one of the first to fifth aspects, a ferroelastic film disposed on the film and projecting from the film shorter than the contact pins, A technology including a support member for supporting the ferroelastic film and the contact probe is employed.

In this probe device, since the ferroelastic film is provided, and the ferroelastic film presses the tip side of the contact pin from above, even if the pin tip is curved upward, it is uniformly applied to each pin. High contact pressure is obtained. That is, in combination with the accurate bending position by the notch, the tip of the contact pin can be reliably brought into contact with the object to be measured, so that measurement errors due to poor contact can be further reduced.

[0025] In the probe device according to claim 7, wherein the claim
A contact probe according to claim 4, and on the metal film
Protruding ferroelastic film, and the ferroelastic film
And a support member for supporting the contact probe.
A projection of the contact pin from the metal film.
The protruding length is X1, the length of the film from the metal film.
When the protruding length is X2, a configuration where X1> X2 is adopted.
In this case, a technique is employed in which the film is formed longer on the distal end side than the ferroelastic film so that the ferroelastic film becomes a buffer when the contact pin is pressed.

In this probe device, the film is formed longer on the distal end side than the ferroelastic film, and the ferroelastic film acts as a cushioning material when pressing the contact pins. The contact pin is not distorted and bent due to friction with the film, and the stable contact with the object to be measured can be maintained in combination with the accurate bending position by the notch.

In the method of manufacturing a contact probe according to the present invention, a plurality of pattern wirings are formed on a film, and the tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. A first metal layer forming step of forming a first metal layer of a material to be adhered to or bonded to the material of the contact pin on a substrate layer, and forming a mask on the first metal layer. A plating step of forming a second metal layer to be provided for the contact pins by plating on an unmasked portion, and providing the contact pins on the second metal layer from which the mask has been removed. A film applying step of applying the film covering portions other than the portion to be formed, a portion comprising the film and a second metal layer, the substrate layer and a first metal layer. And a contact pin bending step of bending the contact pin in a thickness direction at an intermediate position thereof, wherein the plating step includes applying the mask. By forming a notch-forming portion, which is an unmasked portion of a notch shape, on both sides of the portion provided at the intermediate position, the intermediate portion is provided at the intermediate position of the second metal layer to be plated. The technique of forming notches on both side surfaces of a portion to be cut is adopted.

In this method of manufacturing a contact probe,
In the plating step, the notch forming portions are formed on both sides of the portion provided at the intermediate position when applying the mask,
Notches can be formed on both side surfaces of the portion provided at the intermediate position of the second metal layer serving as a contact pin. Further, in the contact pin bending step, the formed contact pin is bent in the thickness direction at the intermediate position, so that the notch serves as an escape for plastic deformation, and compressive stress concentrated on the inside of the bent portion is dispersed. -At the same time as the stress is relaxed, the stress that stretches the outside is also relaxed, and cracks and the like outside the bent portion that occur at the time of bending are suppressed. In addition, a notch of a desired position and shape can be easily obtained simply by changing the mask drawing, and in the contact pin bending step,
Since the bent portion is always bent at the intermediate position where the cutout portion is formed, the length from the intermediate position to the tip of the contact pin can be obtained with high accuracy, and the height variation of the contact pin can be suppressed. Further, the step of polishing the contact pins, which has been conventionally performed after bending, that is, the step of polishing and shaping the tips one by one in order to keep the height of the contact pins constant, becomes unnecessary.

According to a ninth aspect of the present invention, in the method for manufacturing a contact probe according to the eighth aspect, the notch forming portion has a notch depth in a width direction of the contact pin to be formed. A technique that is set within a range of 5% to 20% with respect to the width of the pin is employed.

In this method of manufacturing a contact probe,
When the notch depth in the width direction of the contact pin formed in the notch forming portion is less than 5% with respect to the width of the contact pin, the effect of stress reduction by the notch when bent is hardly obtained, On the other hand, if it exceeds 20%, the notch becomes too large and the strength required as a contact pin cannot be maintained, so by setting it within the above range,
Good stress relaxation effect and strength are maintained.

In the method for manufacturing a contact probe according to a tenth aspect, in the method for manufacturing a contact probe according to the eighth or ninth aspect, the notch forming portion has a notch length in a length direction of the contact pin to be formed. Is adopted in the range of 1.5 to 3 times the thickness of the contact pin.

In this method of manufacturing a contact probe,
The length of the notch in the length direction of the contact pin formed in the notch forming portion is 1.
If it is less than 5 times, the effect of stress relaxation by the notch when bent is hardly obtained, and if it exceeds 3 times, the notch becomes too large and the strength required as a contact pin cannot be maintained. By setting it within the above range, good stress relaxation effect and strength are maintained.

[0033]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of a contact probe according to the present invention will be described with reference to FIGS. In these figures, reference numeral 1 denotes a contact probe, 2 denotes a resin film, and 3 denotes a pattern wiring.

As shown in FIGS. 2 and 3, the contact probe 1 of this embodiment
And has a pattern wiring 3 formed of metal on one surface of the resin film 2.
The tip of the pattern wiring 3 protrudes from an end of the resin film 2 (that is, each side of the central opening K) and serves as a contact pin 3a. At the rear end of the pattern wiring 3, a contact terminal 3b to be contacted with a contact pin on the tester side is formed.

The pattern wiring 3 is formed of a Ni—Mn alloy (second metal layer), and the contact pins 3a are formed by coating Au on the surface. The Ni—Mn alloy is disposed on the resin film 2 side, and the Mn concentration is set in a range from 0.05% by weight to 1.5% by weight.

The contact pins 3a correspond to those shown in FIG.
As shown in FIG. 3, notches U are formed on both side surfaces of a middle position V of a predetermined length from the tip, and the middle position V
At a predetermined angle toward the resin film 2 in the thickness direction.

Next, with reference to FIGS. 4 and 5, the steps of manufacturing the contact probe 1 will be described in the order of steps.

[Base Metal Layer Forming Step (First Metal Layer Forming Step)] First, as shown in FIG. 4A, a base metal is formed on a stainless steel supporting metal plate 5 by Cu (copper) plating. A metal layer (first metal layer) 6 is formed.

[Pattern Forming Step] After a photoresist layer 7 is formed on the base metal layer 6, as shown in FIG. 4B, a predetermined pattern is formed on the photoresist layer 7 by photolithography. A photomask 8 is applied and exposed, and as shown in FIG.
Is developed to remove the portion to be the pattern wiring 3 and form an opening 7a in the remaining photoresist layer (mask) 7.

At this time, as shown in FIG. 5, a notch forming portion 7b, which is an unmasked portion of a notch shape, is provided on both sides of the portion provided at the intermediate position V of the opening 7a.
Is formed. In the notch forming portion 7b, the notch depth d in the width direction of the contact pin 3a to be formed is set in a range of 5% to 20% with respect to the width of the contact pin 3a. Further, in the notch forming portion 7b, the notch length 1 in the length direction of the contact pin 3a to be formed is set within a range of 1.5 to 3 times the thickness of the contact pin 3a.

In the present embodiment, the photoresist layer 7 is formed of a negative type photoresist, but a desired type of opening 7a is formed by employing a positive type photoresist.
May be formed. In the present embodiment,
The photoresist layer 7 corresponds to a “mask” in the present invention. However, the “mask” in the claims of the present application is:
Like the photoresist layer 7 of the present embodiment, the present invention is not limited to the one in which the opening 7a is formed through the exposure and development steps using the photomask 8. For example, a hole is formed in advance in a portion to be plated (that is, in advance,
A film or the like (formed in a state indicated by reference numeral 7 in FIG. 4C) may be used. In the present invention, when such a film or the like is used as a “mask”, the pattern forming step in the present embodiment is unnecessary.

[Plating Step] Then, FIG.
As shown in FIG. 5, a Ni-Mn alloy layer (second metal layer) N to be the pattern wiring 3 is formed in the opening 7a by electrolytic plating. At this time, as an example of the composition of the plating solution in order to contain Mn, using a sulfamate Ni bath to which Mn sulfamate is added, controlling the amount of Mn in the plating solution and the current density when plating, M
The n content is set to be in the range of 0.05% by weight to 1.5% by weight.

After the plating process, the photoresist layer 7 is removed as shown in FIG. At this time, as shown in FIG. 1A, a desired shape corresponding to the notch shape of the notch forming portion 7b is provided on both side surfaces of the portion provided at the intermediate position V of the plated Ni—Mn alloy layer N. A notch U is formed.

[Film Adhering Step] Next, FIG.
As shown in the above, on the Ni-Mn alloy layer N,
In addition to the tip of the pattern wiring 3 shown in FIG.
Are adhered by the adhesive 2a. This resin film 2
This is a two-layer tape in which a metal film (copper foil) 500 is integrally provided on a polyimide resin PI. Before this film deposition step, the metal film 500 of the two-layer tape
Then, copper etching using photoengraving technology is applied to form a ground plane, and in this film deposition step,
The polyimide resin PI of the two-layer tape is adhered to the Ni-Mn alloy layer N via the adhesive 2a. The metal film 500 may be made of Ni, Ni alloy or the like in addition to the copper foil.

[Separation Step] Then, as shown in FIG. 4 (g), after the portion composed of the resin film 2, the pattern wiring 3 and the base metal layer 6 is separated from the supporting metal plate 5, Cu etching is performed. After that, only the pattern wiring 3 is adhered to the resin film 2.

[Gold Coating Step] Then, as shown in FIG.
Plating is applied to form an Au layer AU on the surface. At this time, the Au layer AU is formed on the entire surface of the contact pins 3a protruding from the resin film 2 over the entire circumference.

[Contact Pin Bending Step] After the above step,
Using a precision mold, the contact pins 3a are collectively bent at an intermediate position V in the thickness direction, and FIG. 1B and FIG.
As shown in the figure, a contact pin 3a having a predetermined angle
To form

Through the above steps, the contact probe 1 in which the pattern wiring 3 is adhered to the resin film 2 as shown in FIGS. 2 and 3 is manufactured.

In the method of manufacturing the contact probe 1, in the plating process, the notch forming portions 7b are formed on both sides of the portion provided at the intermediate position V when applying a mask, so that the Ni— Notches U can be formed on both side surfaces of the portion provided to the intermediate position V of the Mn alloy layer N. Further, in the contact pin bending step, the formed contact pin 3a is
Since it is bent in the thickness direction at the intermediate position V, the notch U
Serves as an escape portion for plastic deformation, dispersing and relaxing the compressive stress concentrated inside the bent portion, and at the same time, relaxing the stress that stretches the outside, thereby suppressing cracks and the like on the outside of the bent portion that occur at the time of bending.

Further, the notch U having a desired position and shape can be easily obtained simply by changing the mask drawing.
In the contact pin bending step, the length from the intermediate position V to the tip of the contact pin 3a can be obtained with high precision since the contact pin 3a is always bent at the intermediate position V where the notch U is formed. Height variations are suppressed.
In particular, the accuracy of the bending position is significantly improved as compared with the conventional contact pin using a tungsten needle where it is difficult to make the bending position constant, and therefore, the contact pin which has been conventionally formed after the bending is performed. This polishing step, that is, a step of polishing and shaping the tips one by one in order to keep the height of the contact pins 3a constant, becomes unnecessary.

Further, in the notch forming portion 7b, if the notch depth d in the width direction of the contact pin 3a to be formed is less than 5% of the width of the contact pin 3a, the notch U Hardly obtains the effect of stress relaxation, and if it exceeds 20%, the notch U becomes too large and the strength required for the contact pin 3a cannot be maintained, so the notch depth d is set within the above range. By doing so, good stress relaxation effect and strength are maintained.

When the notch length 1 in the length direction of the contact pin 3a to be formed in the notch forming portion 7b is less than 1.5 times the thickness of the contact pin 3a, when the bent portion is bent. The effect of stress relaxation by the notch U is hardly obtained, and if it exceeds three times, the notch U becomes too large to maintain the strength required for the contact pin 3a. By setting it within the range, good stress relaxation effect and strength are maintained.

Next, an example in which the contact probe 1 is applied to a probe device used for a burn-in test or the like, that is, a so-called chip carrier, will be described with reference to FIGS. In these figures, reference numeral 10 denotes a probe device, 11 denotes a frame body, 12 denotes a positioning plate, 13
Denotes an upper plate, 14 denotes a clamper, and 15 denotes a lower plate. Note that the contact probe according to the present invention functions as a flexible substrate when incorporated in a probe device because the contact probe as a whole is flexible and easily bent.

As shown in FIGS. 6 and 7, the probe device 10 includes a frame body 11, a positioning plate 12 fixed inside the frame body and having an opening formed in the center.
The contact probe 1 includes an upper plate (supporting member) 13 for holding the contact probe 1 from above and supporting the same, and a clamper 14 for urging the upper plate 13 from above and fixing the upper plate 13 to the frame body 11. Further, a lower plate 15 for mounting and holding the IC chip I is attached to a lower portion of the frame main body 11 by a bolt 15a.

The central opening K and the contact pins 3a of the contact probe 1 are formed by the shape and the I of the IC chip I.
It is formed corresponding to the arrangement of the contact pads on the C chip I, and the contact state between the contact pins 3a and the contact pads of the IC chip I can be monitored from the central opening K. Notches are formed in the corners of the central opening K so that the contact probe 1 can be easily assembled.
Can be deformed.

The contact terminal 3 of the contact probe 1
b is set wider than the pitch of the contact pins 3a so that the contact pads of the IC chip I having a narrower pitch and the tester side contact pins having a wider pitch than the contact pads can be easily matched. .

Note that contact pads are not formed on all four sides of the IC chip I, and if the contact pads are arranged on some of the sides, at least the central opening K corresponding to the part of the sides is formed. It is sufficient to provide the contact pins 3a only on the sides, but in order to stably hold the IC chip I, it is preferable to form the contact pins 3a on two opposing sides and press both opposing sides of the IC chip I. .

A procedure for attaching the IC chip I to the probe device 10 will be described. [Temporary Assembly Step] First, the positioning plate 12 is
And the contact probe 1
Are arranged so that the central opening K and the opening of the frame body 11 are aligned. Then, the upper plate 13 is placed on the central opening K with the openings similarly aligned, and the frame main body 1 is placed on the upper plate 13 from above.
1 is engaged with the clamper 14. Since the clamper 14 is a kind of leaf spring having a bent portion in the center, the clamper 14 has a function of pressing and fixing the upper plate 13 in the locked state.

In the above assembled state, an opening is provided at the center and the IC chip I is attached to this portion, so that the attached IC chip I can be observed from above the opening. The upper plate 13 and the clamper 14 are formed in a substantially rectangular shape on a plane, and as shown in FIG. 7, are assembled so that the contact terminals 3b of the contact probe 1 project outward from the long sides.

In the lower surface of the upper plate 13, the vicinity of the opening is inclined at a predetermined inclination angle, and as shown in FIG. 8, the contact pins 3a of the contact probe 1 are inclined downward at a predetermined angle. The IC chip I is placed on the lower plate 15 with the wiring side facing upward. In this state, the lower plate 15 is temporarily fixed to the frame main body 11 from below. At this time, since the distance between the tip of the contact pin 3a of the contact probe 1 and the upper surface of the lower plate 15 is set smaller than the thickness of the IC chip I by a predetermined amount, the IC chip I is sandwiched between the contact pin 3a and the lower plate 15. You.

[Positioning Step] Further, while observing the position of the contact pad of the IC chip I with respect to the tip of the contact pin 3a from above the opening, the positioning plate 12 is moved or the IC chip I is moved with a needle jig or the like. And fine adjustment is set so that the corresponding tip of the contact pin 3a and the contact pad coincide with each other and come into contact with each other.

When the dicing accuracy of the IC chip I is high and the outer shape and the position of the contact pad are relatively stable, the positional relationship between the positioning plate 12 and the contact probe 1 must be adjusted in advance. By fixedly assembling, it is possible to match the contact pin 3a with the contact pad without performing the fine adjustment. Thus, the step of aligning the IC chip I becomes unnecessary, and the work of mounting the IC chip I can be performed efficiently and easily.

[Fixing Step] After the positioning step, the lower plate 15 is fixed to the frame body 11 in full scale. At this time, so-called overdrive is applied to the contact pin 3a in the inclined state, and the contact pin 3a is pressed with a predetermined pressing force.
a The tip and the contact pad are in contact with each other to be reliably electrically connected. This state is very similar to the state where the IC chip I is mounted on a so-called multi-chip module or the like, and the operation state of the IC chip I almost mounted can be tested with high reliability.

The probe device 10 is a small chip carrier of about 1 inch square (about 2.5 cm square), and is suitable for a reliability test involving high-temperature heating such as a dynamic burn-in test.

In the probe device 10 described above, the contact pins 3a of the contact probe 1
Since the contact pin 3a is formed of a nickel-manganese alloy contained in a range of from 1.5% by weight to 1.5% by weight, the contact pin 3a has a hardness of Hv 350 or more even after heating at a high temperature, for example, at 500 ° C. Have. That is, Ni-
The hardness of the Mn alloy does not extremely decrease even by heating at a high temperature.

Further, if the amount of manganese (Mn) is less than 0.05% by weight, a hardness of not less than Hv 350 cannot be obtained.
If the content exceeds 5% by weight, the stress at the tip portion may be increased and the tip may be curved, and the tip may be very brittle and the toughness may be reduced. Therefore, by setting the Mn content within the above range, the contact probe 1 may be used. The required high hardness and toughness are obtained. In particular, since high hardness and high toughness can be obtained even at the bent portion, the occurrence of cracks and the like outside the bent portion is suppressed even at the time of bending and repeated use.

In the first embodiment, the contact probe 1 is applied to the probe device 10 as a chip carrier. However, the contact probe 1 may be applied to another measuring jig or the like.

Next, as a second embodiment, a configuration in which the contact probe 16 according to the present invention is adopted as an IC probe and assembled into a mechanical part 60 to form a probe device (probe card) 70 will be described with reference to FIGS. This will be described with reference to FIG.

FIGS. 9 and 10 are views showing the contact probe 16 cut out into a predetermined shape as an IC probe, and FIG. 11 is a sectional view taken along line CC of FIG. In the contact probe 16 of the second embodiment, the tip of the contact pin 3 a of the first embodiment is bent toward the resin film 2, while the tip of the contact pin 3 a is opposite to the resin film 2. It is bent to face the other side.

As shown in FIG. 10, the resin film 2 of the contact probe 16 has a positioning hole 2 for positioning and fixing the contact probe 16.
b and a hole 2c, and a window 2d for transmitting a signal obtained from the pattern wiring 3 to the printed circuit board 20 (see FIG. 12) via a contact terminal 3b which is a lead-out wiring.

As shown in FIG. 12, the mechanical part 60 includes a mounting base 30, a top clamp 40, and a bottom clamp 50. First, the top clamp 40 is mounted on the printed circuit board 20. Next, the mounting base 30 to which the contact probe 16 has been
Then, a bolt 42 is screwed into the mounting member 1 (see FIG. 13). Then, by holding down the contact probe 16 with the bottom clamp 50, the pattern wiring 3 is maintained in a constant inclined state, the tip of the contact pin 3a bent downward is set at a predetermined angle, and the contact pin 3a is Press against IC chip.

FIG. 13 shows the probe device 70 after assembly is completed.
Is shown. FIG. 14 is a sectional view taken along line EE of FIG. As shown in FIG. 14, the tip of the pattern wiring 3, that is, the contact pin 3a is connected to the mounting base 30.
Is in contact with the IC chip I.

The mounting base 30 is provided with a positioning pin 31 for adjusting the position of the contact probe 16. By inserting the positioning pin 31 into the positioning hole 2 b of the contact probe 16, a pattern is formed. The wiring 3 and the IC chip I can be accurately positioned. The elastic body 51 of the bottom clamp 50 is pressed against the pattern wiring 3 in the portion of the window 2 d provided in the contact probe 16 to bring the contact terminal 3 b into contact with the electrode 21 of the printed circuit board 20. Signal 21
Can be communicated to the outside.

The probe device 70 configured as described above
When performing a probe test or the like of the IC chip I using the probe device 70, the probe device 70 is inserted into the prober and electrically connected to the tester, and a predetermined electric signal is transmitted from the contact pins 3a of the pattern wiring 3 to the wafer. By sending the signal to the IC chip I, the output signal from the IC chip I is transmitted from the contact pin 3a to the tester, and the electrical characteristics of the IC chip I are measured.

In the contact probe 16 and the probe device 70 incorporating the same, as in the first embodiment, the stress is relaxed by being bent at the notch U, so that a crack or the like is formed in the bent portion even after repeated use. Hardly to occur,
Since each contact pin 3a is accurately bent at a predetermined intermediate position V where the cutout U is formed, a uniform height of the contact pin 3a can be obtained. In addition, the contact pin 3a is made of N having a manganese concentration of 0.05 to 1.5% by weight.
Since it is formed of an i-Mn alloy, the toughness of the bent portion and the high hardness (Hv) of the contact pin 3a as a whole are high.
350 or more).

Next, referring to FIG. 15 to FIG.
An embodiment will be described. In the present embodiment, the contact probe 16 cut into a predetermined shape for an IC probe in the second embodiment is used by cutting into a predetermined shape of an LCD probe instead. The contact probe cut into the LCD probe is shown in FIG.
17, reference numeral 200 denotes a resin film.

As shown in FIG. 18, an LCD probe device (probe device) 100 has a structure in which a contact probe holding body (support member) 110 is fixed to a frame frame 120. The tip of the contact pin 3a protruding from the holding body 110 is LC
D (liquid crystal display) 90 is in contact with a terminal (not shown).

As shown in FIG. 17, the contact probe holding body 110 has a top clamp 111 and a bottom clamp 115. The top clamp 111 is provided with a first projection 112 for holding the tip of the contact pin 3a.
ABIC (wiring board having board-side pattern wiring) 3
It has a second projection 113 for holding the terminal 301 on the 00 side and a third projection 114 for holding the lead. The bottom clamp 115 includes an inclined plate 116, a mounting plate 117, and a bottom plate 118.

The contact probe 200 is moved to the inclined plate 116.
And the terminals 301 of the TABIC 300 are connected to the resin films 201 and 20 of the contact probe 200.
Place it so that it is located between the two. Thereafter, the top clamp 111 is mounted on the resin film 201 such that the first protrusion 112 is on the resin film 201 and the second protrusion 113 is in contact with the terminal 301, and is assembled with a bolt.

As shown in FIG. 19, a contact probe holding body 110 is manufactured by incorporating a contact probe 200 and combining a top clamp 111 and a bottom clamp 115 with bolts 130.

The contact probe holding body 110 is
As shown in FIG.
Assembled in the CD probe device 100. In order to perform an electrical test of the LCD 90 using the LCD probe device 100, the contact pins 3 a of the LCD probe device 100 are obtained from the contact pins 3 a with the tips of the contact pins 3 a being in contact with the terminals (not shown) of the LCD 90. This is performed by taking out the output signal through the TABIC 300 to the outside.

In the above-described LCD probe device 100, L
Since the contact pin 3a to be brought into contact with the terminal of the CD 90 is bent at the notch U at the intermediate position V as in the first embodiment and the second embodiment, cracks and the like hardly occur in the bent portion, and The height of the contact pin 3a can be obtained. Further, since the contact pin 3a is formed of a Ni-Mn alloy having a manganese concentration of 0.05 to 1.5% by weight, good toughness at the bent portion and high hardness as the contact pin 3a as a whole can be obtained.

Next, referring to FIG. 21 to FIG.
An embodiment will be described. As shown in FIG. 21, the contact probe 20 described in the third embodiment
In addition to the normal tip S, the contact pin 3a at 0 has a tip S1 curved upward and a tip S2 curved downward due to some residual stress during plating or due to other factors. There are cases.

In this case, as shown in FIG. 22, even when the resin film 201 is sandwiched between the first protrusion 112 and the inclined plate 116 and the contact pin 3a is pressed against the terminal of the LCD 90, the normal tip S and the downward bending are obtained. Tip S2
Touches the terminal of the LCD 90, but the tip S1 curved upward may not be able to obtain a sufficient contact pressure even if it makes contact. From this, the contact pin 3a
However, there is a problem that a contact failure with the LCD 90 occurs and an accurate electrical test cannot be performed.

Therefore, in the fourth embodiment, as shown in FIG. 23, the tip S1 curved above the contact pin 3a.
In order to align the downwardly curved distal end S2 with the normal distal end S, a ferroelastic film 400 made of an organic or inorganic material is
a, and the contact probe 200 and the ferroelastic film 400 are attached to the first protrusion 1 of the top clamp 111 in such a state that the top end of the top clamp 111 protrudes shorter than the contact pin 3a.
A contact probe holding body (supporting member) 110 sandwiched between the base 12 and the inclined plate 116 of the bottom clamp 115 is employed. The ferroelastic film 400 is preferably made of polyethylene terephthalate or the like if it is an organic material, and is preferably made of ceramics, especially an alumina film if it is an inorganic material.

The contact probe holding body 1
10 is fixed to the frame 120, and the contact pins 3
When a is pressed against the terminal of the LCD 90, the ferroelastic film 400 presses the contact pin 3a from above, so that even the tip S1 curved upward, the ferroelastic film 400 reliably contacts the terminal of the LCD 90. Thereby, a uniform contact pressure is obtained at the tip of each contact pin 3a.

That is, together with the accurate bending position of the notch U, the contact pin 3
aBecause the tip can be reliably contacted, measurement errors due to poor contact can be eliminated. further,
By changing the amount of protrusion of the contact pin 3a from the ferroelastic film 400, it is possible to change the timing of pressing the contact pin 3a from above when the contact pin 3a is pressed. Can be obtained.

Next, a fifth embodiment will be described with reference to FIGS. As shown in FIG. 24, since the resin film 201 of the contact probe 200 described in the third embodiment is made of, for example, a polyimide resin, it absorbs moisture and elongates, so that the area between the contact pins 3a, 3a is increased. The interval t sometimes changed. This makes it impossible for the contact pins 3a to come into contact with the predetermined positions of the terminals of the LCD 90, and there is a problem that an accurate electrical test cannot be performed.

Therefore, in the fifth embodiment, as shown in FIG.
00 and the contact pin 3 even if the humidity changes
The change in the interval t between the contact pins 3a and 3a is reduced, whereby the contact pins 3a are reliably brought into contact with the predetermined positions of the terminals of the LCD 90.

That is, the position of each contact pin 3a is less likely to be displaced, and the tip is accurately and accurately contacted with the terminal of the LCD 90. Therefore, in combination with the accurate bending position by the notch U, it is possible to prevent damage or the like caused by contact of the contact pin 3a with a place other than the terminal of the LCD 90. Note that the metal film 500 is preferably one of Ni, a Ni alloy, Cu, and a Cu alloy.

Further, the metal film 500 can be used as a ground, thereby making it possible to design the impedance matching up to the vicinity of the tip of the probe device 100. Even when a test in a high frequency range is performed, the metal film 500 may be used as a reflection noise. The effect of being able to prevent adverse effects can be obtained.

Next, a sixth embodiment will be described with reference to FIG. That is, the metal film 500 is attached on the resin film 201 as in the fifth embodiment, and the ferroelastic film 400 is used as in the third embodiment. A uniform contact pressure can be obtained irrespective of the curvature of the tip, and a change in the interval t between the contact pins 3a, 3a can be minimized to perform the electrical test accurately.

Next, a seventh embodiment will be described with reference to FIGS. 27 and 28. As shown in FIG. 27, the metal film 5 adhered on the resin film 201
A configuration in which a second resin film 202 is further adhered on the second resin film 202 is adopted, and a ferroelastic film 400 is provided on the second resin film 202 as shown in FIG.

Here, unlike the sixth embodiment, the reason why the second resin film 202 is provided is that the terminals of the TABIC 300 disposed above the metal film 500 at the rear end directly contact the metal film 500. This is because the short circuit caused by the above is prevented. In addition, if the metal film 500 is merely attached and provided on the resin film 201, the oxidation of the metal film 500 exposed in the air proceeds, so that the second resin film 202 Is also to prevent its oxidation.

Next, an eighth embodiment will be described with reference to FIGS. 29 and 30. In the fourth, sixth and seventh embodiments, the ferroelastic film 400 is in press contact with the contact pins 3a during use, and the friction between the ferroelastic film 400 and the contact pins 3a is repeated by repeated use, When the distortion due to this is accumulated, the contact pin 3a may bend right and left, and the contact point may shift.

Therefore, in the eighth embodiment, as shown in FIG. 29, the resin film 201 is made to be a wider film 201a than the conventional one, and the projecting length of the contact pins 3a from the metal film 500 is set to X1, and Assuming that the projecting length of the resin film 201a from the metal film 500 is X2, a configuration in which X1> X2 is adopted. Then, as shown in FIG. 30, when the ferroelastic film 400 is overlapped and used so as to protrude shorter than the wide resin film 201a, the ferroelastic film 400 comes into contact with the soft wide resin film 201a and the contact pin 3a
Is not directly in contact with the contact pin 3a, so that the contact pin 3a can be prevented from bending left and right.

Further, the LCD according to the eighth embodiment described above
Probe device 100, the wide resin film 201a
Is formed longer on the distal end side than the ferroelastic film 400 and acts as a cushioning material when the ferroelastic film 400 presses the contact pin 3a. Is not distorted and curved, and stable contact with the terminal of the LCD 90 can be maintained in conjunction with the accurate bending position by the notch U.

Next, a ninth embodiment will be described with reference to FIGS. 31 and 32. When the second resin film 202 is attached on the metal film 500, and the length of the contact pins 3a protruding from the metal film 500 is X1, and the length of the wide resin film 201a protruding from the metal film 500 is X2, X1> It is configured so as to have a relationship of X2. Then, as shown in FIG. 32, the ferroelastic film 400 provided on the second resin film 202 is overlapped so as to protrude shorter than the wide resin film 201a.

In the LCD probe device 100 according to the ninth embodiment, the respective functions and effects of the third to eighth embodiments, that is, increasing the hardness of the contact pin 3a,
Effects such as prevention of cracks and the like at the bent portion and improvement of toughness, uniformity of contact pressure, suppression of displacement, stabilization of contact pressure, and prevention of short circuit by a metal film are obtained.

Note that the contact probes in the third to ninth embodiments may be employed in probe devices for chip carriers and IC probes. In this case, the shape and wiring of the contact probe, the pitch and arrangement of the contact pins, the position and angle of the bending, and the like are set in accordance with each probe device to be incorporated.

Next, referring to FIG. 33 to FIG. 36, the first
Embodiment 0 will be described. The difference between the tenth embodiment and the first embodiment is that, in the probe device 10 of the first embodiment, the IC chip I is located below the contact probe 1, whereas the probe device 700 of the tenth embodiment is different. The point is that the IC chip I is located above the contact probe 701.

That is, the probe device 700 is the same as that shown in FIG.
35 to 35, a frame main body 711, a positioning plate 712 fixed to the inside of the frame main body 711 and having a rectangular opening formed in the center and an inclined surface inclined upward around the opening. A contact probe 701 disposed on a positioning plate 712;
An upper plate (supporting member) 713 for holding and supporting 1 from above
And the upper plate 713 is urged from above to move the frame body 711
And a clamper 714 fixed to the In the probe device 700, the IC chip I is disposed above the contact probe 701, that is, between the tip of the contact pin 3a bent upward and the upper plate 713.

Further, the contact pins 3a of the contact probe 1 in the first embodiment are
That is, while the contact pin 3a is bent downward, the contact pin 3a of the contact probe 701 according to the tenth embodiment differs from the contact pin 3a shown in FIGS.
As shown in FIG. 6, a point different from the resin film 2 at an intermediate position V of a predetermined length from the tip thereof is that it is bent upward.

Next, an eleventh embodiment will be described with reference to FIG. The difference between the eleventh embodiment and the first embodiment is that the contact pin 3a of the contact probe 1 in the first embodiment has a manganese concentration of a constant concentration within a range of 0.05% by weight to 1.5% by weight. N set
While the contact pin 3a of the contact probe 800 in the eleventh embodiment has a high manganese alloy layer HM in which the manganese concentration is set to 0.05% by weight or more, the contact pin 3a is made of an i-Mn alloy. Manganese alloy layer HM
Low manganese alloy layer L set to lower manganese concentration
M, and is bent at an intermediate position V with the low manganese alloy layer LM side facing outward.

In this contact probe 800, since the high manganese alloy layer HM is a Ni—Mn alloy having a manganese concentration of 0.05% by weight or more, even after heating at room temperature and high temperature, that is, at 500 ° C., the high manganese alloy layer HM has an Hv of 350 or more. Hardness is obtained. Furthermore, since the low manganese alloy layer LM formed of a Ni-Mn alloy having a lower manganese concentration than the high manganese alloy layer HM is bent with the LM side facing outward, when the high manganese alloy layer HM is formed as a single layer, The toughness on the outside of the bent portion is higher than that of the bent portion, and the generation of cracks and the like on the outside of the bent portion is further suppressed in combination with the effect of the notch U.

In the manufacturing process of the contact probe 800, the plating process and the contact pin bending process of the contact probe 1 of the first embodiment are different as follows.

[Plating Process] In the manufacturing process of the eleventh embodiment, the Ni—Mn alloy layer (second metal layer) N serving as the pattern wiring 3 is formed by a “high toughness layer forming process” and a “high hardness layer forming process”. Steps ", and is formed by electrolytic plating.

<Step of Forming High Toughness Layer> First, a low manganese alloy layer LM having a low manganese concentration and serving as a high toughness layer is formed on the base metal layer 6 by plating. At this time, as an example of the composition of the plating solution to contain Mn, a plating solution obtained by adding Mn sulfamate to a Ni sulfamate bath was used.
By controlling the amount of Mn in the plating solution and the current density during plating, the Mn concentration is set lower than the high manganese alloy layer HM to be plated next. In the present embodiment, the current density is gradually increased, and the Mn concentration is gradually increased in the thickness direction.

<High Hardness Layer Forming Step> Further, a high manganese alloy layer HM which is a high hardness layer having a Mn concentration in the range of 0.05% to 1.5% by weight is formed on the low manganese alloy layer LM by plating. And laminate. At this time, Mn in the plating solution
The Mn concentration is set higher than the low manganese alloy layer LM by controlling the amount and the current density during plating. The thicknesses of the low manganese alloy layer LM and the high manganese alloy layer HM are appropriately set depending on the respective Mn concentrations, bending positions, angles, and the like. For example, the high manganese alloy layer HM having a thickness of several tens μm is used. On the other hand, the thickness of the low manganese alloy layer LM is set in a range from about several μm to about several tens μm.

[Contact Pin Bending Step] After the separation step and the gold coating step, the contact pins 3a are collectively bent using a precision mold so that the low manganese alloy layer LM side faces outward. As shown, a contact pin 3a having a predetermined angle is formed.

In each of the above embodiments, the following settings are made. (1) As shown in FIG. 38, the tip of the contact pin 3a in each of the above embodiments is in contact with the pad P (measurement object) of the IC chip I at an angle α with the contact surface Pa.
Is not less than 60 ° and less than 90 °, and the base end of the contact pin 3a has an angle β with the contact surface Pa.
Is not less than 0 ° and not more than 30 °.

Since it is difficult to form a fine pattern in a desired shape on a mask when manufacturing the contact pin 3a, as shown in FIG. 9, a contact pattern corresponding to an end of the pattern is formed. The tip of the pin 3a has a convex curved surface. Therefore, the contact pin 3a
Substantially point contact with the pad P below the convex curved surface,
Therefore, since the local needle pressure at the time of contact becomes large, there is a tendency that the base of the pad P is more easily cut than the conventional tungsten needle which contacts the pad in a substantially flat surface.

Therefore, in each of the above embodiments, as described above, the contact pin 3a is bent at the intermediate position V as shown in FIG. The angles α and β with respect to the contact surface Pa are changed. This makes it possible to set the angle α (contact angle) to be large without increasing the angle β, that is, the angle of the resin film 2 with respect to the contact surface Pa. Therefore, the scrub distance is excessively large. It is possible to prevent the base of the pad P from being damaged during scrubbing without increasing the height of the probe device.

In particular, since the angle α is maintained at 60 ° or more, the base of the pad P is not damaged. On the other hand, the reason why the angle α is set to less than 90 ° is that if the angle α is 90 ° or more, the film of the pad P is not rubbed well during scrubbing, and sufficient conductivity is not ensured. Because it causes

Further, since the angle β is set to 30 ° or less, the scrub distance does not become excessively long, and the tip of the contact pin 3a does not protrude from the pad P during the scrub. On the other hand, the reason for setting the angle β to 0 ° or more is that if it is less than 0 °, a sufficient overdrive amount (arrow Z in FIG. 38) cannot be obtained during scrubbing. Note that the scrub distance is slightly smaller than the calculated value due to the contact pin 3a flexing during overdrive or the tip of the contact pin 3a being caught by friction with the contact surface Pa. I know that.

(2) In each embodiment, the contact pin 3
By bending a as shown in FIG. 38, a surface 3c having a higher degree of parallelism with respect to the contact surface Pa is formed at the tip end portion thereof as compared with the contact pin which is not bent. Conventionally, when aligning a contact pin with a pad, particularly in the second embodiment, light is irradiated from below toward the contact pin, and light reflected on the contact pin is detected, thereby detecting the contact pin. However, as described above, since the surface 3c having a higher degree of perpendicularity to the direction in which light is irradiated is formed, a sufficient amount of light is reflected, and position detection is performed. Is easy.

(3) In each embodiment, the contact pin 3
Since the length L from the middle position V to the front end portion of “a” is 2.0 mm or less, the amount of bending of the portion of the length L during overdrive can be suppressed to be small. By making the contact needle pressure almost constant, good scrub is performed. Further, since the length L is set to 0.1 mm or more, the film or other dust removed at the time of the scrub does not adhere to the inner surface side of the intermediate position V of the contact pin 3a.

(4) In the probe device of each embodiment, the contact surface supporting the front end side of the resin film 2 (for example, FIG. 1)
4, the inclination angle of the mounting base 30 is set to be equal to the angle β, so that the base end of the contact pin 3a protruding from the front end of the resin film 2 along the surface of the resin film 2 is The angle with the contact surface Pa can be stably maintained at the value of β. Thus, the angles α and β can be set to the predetermined values during scrub simply by lowering the probe device perpendicularly to the contact surface Pa.

Note that the present invention also includes the following embodiments. (1) In each of the above embodiments, since the contact pin 3a is accurately bent at the notch U and a uniform height of the contact pin 3a is obtained, the polishing step for polishing the tip of the contact pin to make the height uniform. Is not required, but the contact pins 3
Polishing of the contact pins may be performed after bending for the purpose of improving the flatness (planarity) of the tip end of a and reducing the contact resistance.

(2) In each embodiment, the contact pin 3
Although the notch U is formed and bent at one position V in the middle of a, the notch may be formed in a plurality of middle positions and bent in multiple stages.

(3) In each embodiment, the shape of the notch U is formed in an arc shape, but may be formed in another shape.
For example, the cutout may be formed in a rectangular or V-shape.

[0122]

EXAMPLES In the electroplating step of forming the pattern wiring and contact pins of the contact probe in each of the above embodiments, the plating conditions were determined based on the following test results.

The plating solution for adding Mn to Ni is obtained by adding Mn sulfamate to a Ni sulfamate bath. The amount of Mn contained in the Ni plating film depends on the amount of Mn in the plating solution and the amount of Mn in the plating solution. The plating process was performed under the following conditions, because the plating process depends on the current density. Mn amount: 20 to 35 g / l Current density: 1.0 to 10 A / dm ²

The plating conditions were set within the above range because the Mn content was less than 20 g / l and the current density was 1.0 A /
If it is less than dm ² , the Mn content in the film is small and the desired hardness cannot be obtained, and 35 g / l and 10 A / dm
^If it exceeds ² , the Mn content increases, the stress of the plating film increases, and the film itself becomes very brittle.

It is to be noted that plating may be carried out using not only sulfamic acid but also a nickel sulfate bath as a base. However, in the plating treatment with a nickel sulfamate bath, stress is reduced as compared with a nickel sulfate bath. effective. Table 1 below shows the experimental results of the Mn concentration and the hardness before and after the heat treatment when the current density was changed when the amount of Mn was constant (30 g / l). FIG. 39 shows the relationship between the Mn concentration and the hardness.

[0126]

[Table 1]

[0127]

According to the present invention, the following effects can be obtained. (1) According to the contact probe of the first aspect, notches are formed on both side surfaces at intermediate positions of the contact pins,
And since it is bent in the thickness direction at the intermediate position, the notch serves as an escape portion for plastic deformation, and the stress due to bending is dispersed and relaxed, so that the stress itself that extends outside the bent portion is also relaxed. In addition, it is possible to suppress a crack or the like at a bent portion at the time of repeated use or bending. Further, since the bent portion due to the bending is always formed accurately at the intermediate position where the notch portion is formed, variation in the height of the contact pin can be suppressed, and even contact with a measurement target such as an IC chip can be achieved. Pressure can be obtained.

(2) According to the contact probe of the second aspect, the contact pin is made of nickel-containing manganese in a range of 0.05% by weight to 1.5% by weight.
Since it is formed of a manganese alloy, H
In addition to having excellent heat resistance having a hardness of v350 or more, high hardness and toughness required as a contact probe can be obtained. In particular, since high hardness and high toughness can be obtained even in the bent portion, the occurrence of cracks and the like outside the bent portion can be suppressed even at the time of bending and repeated use over a long period, and high reliability can be achieved.

(3) According to the contact probe of the third aspect, since the high manganese alloy layer is a Ni—Mn alloy having a manganese concentration of 0.05% by weight or more, it is heated at normal temperature and high temperature, that is, at 500 ° C. Hv350 even after
The above high hardness can be obtained. Furthermore, since it is bent with the low manganese alloy layer side formed of a Ni-Mn alloy having a lower manganese concentration than the high manganese alloy layer facing outside, compared to the case of forming a single high manganese alloy layer The toughness outside the bent portion is increased, and the occurrence of cracks and the like outside the bent portion can be further suppressed in combination with the effect of the cutout portion.

(4) According to the contact probe of the fourth aspect, even if the film is, for example, a resin film which easily absorbs moisture and stretches, a metal film is directly attached to the film. Because it is provided,
The extension of the film is suppressed by the metal film, the gap between the contact pins is less likely to occur, and in combination with the accurate bending position by the notch portion, the contact pins can be accurately and precisely placed on the measurement object. Can be abutted. Therefore, the IC chip or L
Damage and the like caused by contact of the contact pin with a place other than the terminal such as a CD can be prevented. Further, in the present contact probe, by using the metal film as the ground, the deviation of the characteristic impedance from the substrate wiring side can be minimized to the vicinity of the contact pin tip, and the malfunction due to the reflected noise can be suppressed. .

(5) According to the contact probe of the fifth aspect, since the second film is directly attached to the metal film, the substrate of the wiring substrate disposed above the metal film is provided. Since the side pattern wiring and other wiring do not directly contact the metal film, a short circuit can be prevented. Further, the second film can cover the metal film to prevent its oxidation.

(6) According to the probe device of the sixth aspect, since the ferroelastic film presses the contact pin from the upper side, even if the pin end is curved upward, the notch is used. Coupled with the exact bending position,
A uniform contact pressure is obtained for each pin. That is, since the contact pin can be reliably brought into contact with the object to be measured, measurement errors due to poor contact can be eliminated.

(7) According to the probe device of the seventh aspect, the film is formed longer on the distal end side than the ferroelastic film, and the ferroelastic film serves as a cushioning material when pressing the contact pin. In addition, the contact pin is not distorted and bent due to friction with the ferroelastic film, and stable contact with the object to be measured can be maintained in combination with the accurate bending position of the notch. Therefore, the contact pressure of the contact pin can be obtained uniformly over a long period of time.

(8) In the method for manufacturing a contact probe according to the eighth aspect, in the plating step, the notch forming portion is formed when the mask is applied, and the notch portion is formed in the portion provided in the middle position. In the contact pin bending step, by bending in the thickness direction at the intermediate position, the notch serves as an escape for plastic deformation, thereby relaxing the stress at the time of bending and suppressing cracks and the like outside the bent portion. can do. In addition, a notch having a desired position and shape can be easily obtained simply by changing the mask drawing, and in the contact pin bending step, the notch is always bent at the intermediate position where the notch is formed. High-precision molding with reduced height variations is possible. Further, the polishing step of the tip of the contact pin, which has been conventionally performed after the bending, becomes unnecessary, and the manufacturing cost can be reduced and the manufacturing time can be reduced with the reduction in the number of steps.

(9) In the method for manufacturing a contact probe according to the ninth aspect, since the notch depth of the notch forming portion is set in a range of 5% to 20% with respect to the width of the contact pin, the contact probe is formed. It is possible to maintain a good stress relaxation effect by the notch and a strength required as a contact pin.

(10) In the method for manufacturing a contact probe according to the tenth aspect, the notch length of the notch forming portion is set within a range of 1.5 to 3 times the thickness of the contact pin. In addition, it is possible to maintain a good stress relaxation effect by the formed notch and the strength required as a contact pin.

[Brief description of the drawings]

FIG. 1 is an enlarged perspective view of a contact pin before and after bending showing a first embodiment of a contact probe according to the present invention.

FIG. 2 is an enlarged schematic view showing a first embodiment of the contact probe according to the present invention.

FIG. 3 is a sectional view taken along line AA of FIG. 1;

FIG. 4 is a fragmentary cross-sectional view showing a method for manufacturing the contact probe according to the first embodiment of the present invention in the order of steps;

FIG. 5 is a main part plan view showing an opening in a pattern forming step in the first embodiment of the contact probe according to the present invention.

FIG. 6 is an exploded perspective view of a probe device (chip carrier) in the first embodiment of the contact probe according to the present invention.

FIG. 7 is an external perspective view of a probe device (chip carrier) in the first embodiment of the contact probe according to the present invention.

FIG. 8 is an enlarged cross-sectional view taken along line BB of a main part of FIG. 5;

FIG. 9 is a perspective view of a main part showing a second embodiment of the contact probe according to the present invention.

FIG. 10 is a plan view showing a second embodiment of the contact probe according to the present invention.

FIG. 11 is a sectional view taken along line CC of FIG. 8;

FIG. 12 is an exploded perspective view showing an example of a probe device incorporating a second embodiment of the contact probe according to the present invention.

FIG. 13 is a perspective view of an essential part showing an example of a probe device incorporating a second embodiment of the contact probe according to the present invention.

FIG. 14 is a sectional view taken along line EE of FIG. 11;

FIG. 15 is a perspective view showing a contact probe in a third embodiment of the probe device according to the present invention.

FIG. 16 is a sectional view taken along line FF of FIG. 13;

FIG. 17 is an exploded perspective view showing a contact probe holding body in a third embodiment of the probe device according to the present invention.

FIG. 18 is a perspective view showing a third embodiment of the probe device according to the present invention.

FIG. 19 is a perspective view showing a contact probe holding body in a third embodiment of the probe device according to the present invention.

20 is a sectional view taken along line XX of FIG.

FIG. 21 is a side view showing a conventional drawback of a contact probe regarding a fourth embodiment of the probe device according to the present invention.

FIG. 22 is a side view showing the conventional disadvantages of the probe device with respect to the fourth embodiment of the probe device according to the present invention.

FIG. 23 is a side view showing a contact probe incorporated in a contact probe holding body in a fifth embodiment of the probe device according to the present invention.

FIG. 24 is a view in the direction of arrow D in FIG. 13 relating to the fifth embodiment of the contact probe according to the present invention.

FIG. 25 is a side view showing a fifth embodiment of the contact probe according to the present invention.

FIG. 26 is a side view showing a contact probe incorporated in a contact probe holding body in a sixth embodiment of the probe device according to the present invention.

FIG. 27 is a side view showing a contact probe in a seventh embodiment of the probe device according to the present invention.

FIG. 28 is a side view showing a contact probe incorporated in a contact probe holding body in a seventh embodiment of the probe device according to the present invention.

FIG. 29 is a side view showing a contact probe in an eighth embodiment of the probe device according to the present invention.

FIG. 30 is a side view showing a contact probe incorporated in a contact probe holding body in an eighth embodiment of the probe device according to the present invention.

FIG. 31 is a side view showing a contact probe in a ninth embodiment of the probe device according to the present invention.

FIG. 32 is a side view showing a contact probe incorporated in a contact probe holding body in a ninth embodiment of the probe device according to the present invention.

FIG. 33 shows a tenth contact probe according to the present invention.
FIG. 2 is an exploded perspective view of the probe device (chip carrier) in the embodiment.

FIG. 34 shows a tenth contact probe according to the present invention.
It is an external appearance perspective view of the probe device (chip carrier) in an embodiment.

FIG. 35 is an enlarged cross-sectional view taken along line GG of a main part of FIG. 32;

FIG. 36 shows a tenth contact probe according to the present invention;
It is an expanded sectional view of a contact pin in an embodiment.

FIG. 37 shows an eleventh embodiment of the contact probe according to the present invention.
It is sectional drawing which shows embodiment.

FIG. 38 shows a tenth contact probe according to the present invention.
It is an enlarged side view of the contact pin in an embodiment.

FIG. 39 is a graph showing the relationship between Mn concentration and hardness at the tip of the contact probe according to the present invention.

FIG. 40 is an enlarged sectional view of a main part showing a conventional example of a contact probe according to the present invention.

[Explanation of symbols]

 1, 16, 701, 800 Contact probe 2 Resin film 3 Pattern wiring 3a Contact pin 7b Notch forming portion 10,700 Probe device 13,713 Upper plate 90 LCD (measurement target) 100 Probe device 110 Contact probe clamp (support member) 200 contact probe 201 resin film 201a resin film (wide resin film) 202 second resin film 300 TABIC (wiring substrate) 301 terminal 400 strong elastic film 500 metal film AU Au layer I IC chip (measurement target) N Ni -Mn alloy layer PI Polyimide resin U Notch V Middle position HM High manganese alloy layer LM Low manganese alloy layer d Notch depth l Notch length

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hideaki Yoshida, 12th Techno Park, Mita City, Hyogo Prefecture Inside the Mita Plant of Mitsubishi Materials Corporation (72) Inventor, Toshiho Ishii 12th Techno Park, Mita City, Hyogo Prefecture 6. Mitsubishi Materials Corporation Mita Plant (58) Field surveyed (Int.Cl. ⁷ , DB name) G01R 1/06-1/073 H01L 21/66

Claims (10)

(57) [Claims] 1. A contact probe in which a plurality of pattern wirings are formed on a film, and each end of the pattern wirings is arranged in a protruding state from the film to be a contact pin, wherein the contact pin is located at an intermediate position thereof. A contact probe, wherein notches are formed on both side surfaces of the contact probe, and the contact probe is bent in the thickness direction at the intermediate position. 2. The contact probe according to claim 1, wherein at least the contact pins are formed of a nickel-manganese alloy, wherein the nickel-manganese alloy has a manganese content of 0.05 to 1.5% by weight. A contact probe characterized in that it is contained within. 3. The contact probe according to claim 1, wherein the contact pin has a manganese concentration of 0.05% by weight.
A high manganese alloy layer set as described above, comprising a low manganese alloy layer set to a lower manganese concentration than the high manganese alloy layer, with the low manganese alloy layer side outside at the middle position A contact probe characterized by being bent. 4. The contact probe according to claim 1, wherein a metal film is directly attached to the film. 5. The contact probe according to claim 4, wherein a second film is directly attached to the metal film. 6. The contact probe according to claim 1, a ferroelastic film disposed on the film and protruding from the film shorter than the contact pin, and the ferroelastic film and the contact. A probe device, comprising: a support member that supports the probe. 7. The contact probe according to claim 4, wherein :
And a protruding ferroelastic film arranged on the metal film
Supporting the ferroelastic film and the contact probe.
And a support member, the metal pin of the contact pin being provided.
The projecting length from the film is X1, and the projecting length of the film from the metal film is X2.
When X1> X2 is adopted, the film is formed longer on the tip side than the ferroelastic film so that the ferroelastic film becomes a buffer when the contact pin is pressed. A probe device. 8. A method of manufacturing a contact probe, wherein a plurality of pattern wirings are formed on a film, and the tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. A first metal layer forming step of forming a first metal layer of a material to be adhered to or bonded to the material of the contact pin; and applying a mask on the first metal layer, A plating step of forming a second metal layer provided for the contact pins by plating, and the film covering the portion other than the portions provided for the contact pins on the second metal layer from which the mask has been removed. A film attaching step of attaching; a separating step of separating a portion consisting of the film and the second metal layer from a portion consisting of the substrate layer and the first metal layer; A contact pin bending step of bending the contact pin in the thickness direction at an intermediate position thereof, wherein the plating step cuts both sides of a portion provided at the intermediate position when applying the mask. By forming a notch forming portion which is a not-masked portion of a notch shape,
A method for manufacturing a contact probe, comprising forming notches on both side surfaces of a portion provided at the intermediate position of the second metal layer formed by plating. 9. The method for manufacturing a contact probe according to claim 8, wherein the notch forming portion has a notch depth in a width direction of the contact pin to be formed that is 5 times larger than a width of the contact pin.
%. A method for manufacturing a contact probe, wherein the ratio is set within a range of 20% to 20%. 10. The method for manufacturing a contact probe according to claim 8, wherein the notch forming portion has a notch length in a length direction of the contact pin formed with respect to a thickness of the contact pin. A method for manufacturing a contact probe, which is set within a range of 1.5 to 3 times.