CN103594575B - 一种双叠层电极的发光器件 - Google Patents
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Abstract
本发明公开了一种双叠层电极发光器件，其特征在于：所述发光器件具有蓝宝石衬底；在蓝宝石衬底上依次具有低温缓冲层、n型掺杂层、多量子阱层、p型掺杂层、叠层p电极；其中n型掺杂层具有台阶结构，在台阶结构上具有叠层n电极；叠层p电极和叠层n电极具有相同的结构。
Description
技术领域
本发明属于半导体发光器件技术领域，特别是涉及一种具有双叠层电极的高亮度的发光器件。
背景技术
半导体发光器件应用日益广泛，特别是在照明方面有取代白炽灯和荧光灯的趋势，但是目前还面临一些技术上的问题，特别是光取出效率比较低。这导致了发光器件的亮度不足等缺陷。
常规半导体发光器件（例如LED）包括顺序形成在蓝宝石衬底上的半导体层发光单元以及半导体发光单元上的接触电极。一般而言，接触电极普遍采用单层金属材料，通过单层金属材料与半导体接触形成欧姆接触，从而形成发光器件的电极。但是这种单层金属材料构成的接触电极的欧姆接触性能并不尽如人意。因为半导体的表面能和用于形成接触电极的金属材料（如Ag）的表面能通常彼此显著不同。由于表面能的差异，在退火期间在接触电极与半导体之间会发生聚结效应，从而在半导体和接触电极之间的界面处形成了多个空洞，这种空洞的存在降低了接触电极的反射率，使得半导体发光器件的光输出性能降低。
发明内容
为了克服现有技术中存在的缺陷，本发明提供了一种具有双叠层电极的高亮度发光器件，通过量子阱材料交替变化的结构，增强了对电子和空穴的限制作用，同时通过采用不同的材料进行堆叠，从而构成叠层结构，将此叠层结构用作半导体发光器件的接触电极，以抑制聚结效应，避免空洞的产生，进一步增强欧姆接触的性能。
本发明提出的双叠层电极发光器件具有蓝宝石衬底；在蓝宝石衬底上依次具有低温缓冲层、n型掺杂层、多量子阱层、p型掺杂层、叠层p电极；其中n型掺杂层具有台阶结构，在台阶结构上具有叠层n电极。
其中，n型掺杂层由Al0.05In0.05Ga0.9N形成，p型掺杂层由Al0.1In0.05Ga0.85N形成；多量子阱层为n-Al0.045In0.055Ga0.9N层和n-AI0.045In0.055Ga0.9P层交替形成的周期结构，以一层n-Al0.045In0.055Ga0.9N层和一层n-AI0.045In0.055Ga0.9P作为一个周期，共形成20-30个周期；叠层p电极和叠层n电极具有相同的结构，其包括：反射层、阻挡层、聚结抑制层以及氧化屏蔽层。
其中，反射层为三层结构，自下而上依次为：TiO2层、Ti3O5层以及Ta2O5层，该反射层用于反射入射到其表面的光；
阻挡层由导电的透明材料形成，所述导电的透明材料选自TiN、RuO、InO、MoO和IrO中的至少一种材料；阻挡层用于阻挡反射层表面的聚结效应，防止空洞的产生；
聚结抑制层为双层结构，下层由金属铝（Al）构成，上层由铝基合金构成，其中，铝基合金为Al-Ag合金、Al-Cu合金、Al-Pd合金、Al-Rh合金、Al-Ni合金、Al-Ru合金或Al-Pt合金；聚结抑制层用于在退火期间抑制接触电极中发生聚结效应而产生空洞；
氧化屏蔽层选自Au、Ni、Pd、Cu、Rh、Ru或Pt中的一种或两种；氧化屏蔽层用于防止聚结抑制层表面被氧化，而且还能用作叠层电极的表面保护层。
本发明的发光器件上的叠层电极的有益效果为：
1.采用交替形成的周期结构的n-Al0.045In0.055Ga0.9N层和n-AI0.045In0.055Ga0.9P层组成多量子阱层，可以增强对电子和空穴的限制作用，有效提高发光器件的发光效率；
2．采用叠层电极作为发光器件的顶电极，能够避免叠层电极中发生聚结效应，避免空洞的产生，从而提高发光器件的光输出特性，并且增强电极与半导体材料之间的欧姆接触性能。
附图说明
图1是本发明提出的发光器件的截面结构示意图。
图2是本发明提出的发光器件的叠层电极的结构示意图。
具体实施方式
参见图1，本发明提出的双叠层电极发光器件具有蓝宝石衬底11；在蓝宝石衬底11上依次具有低温缓冲层12、n型掺杂层13、多量子阱层14、p型掺杂层15、叠层p电极20；其中n型掺杂层13具有台阶结构，在台阶结构上具有叠层n电极30。
其中，n型掺杂层13由Al0.05In0.05Ga0.9N形成，p型掺杂层15由Al0.1In0.05Ga0.85N形成；多量子阱层14为n-Al0.045In0.055Ga0.9N层和n-AI0.045In0.055Ga0.9P层交替形成的周期结构，以一层n-Al0.045In0.055Ga0.9N层和一层n-AI0.045In0.055Ga0.9P作为一个周期，共形成20-30个周期，优选为22、25、28个周期；
参见图2，叠层p电极20和叠层n电极30具有相同的结构，其包括：反射层2、阻挡层3、聚结抑制层4以及氧化屏蔽层5。
其中，反射层2为三层结构，自下而上依次为：TiO2层21、Ti3O5层2以及Ta2O5层3，该反射层用于反射入射到其表面的光；TiO2层21、Ti3O5层2以及Ta2O5层3的厚度相同；
阻挡层3由导电的透明材料形成，所述导电的透明材料选自TiN、RuO、InO、MoO和IrO中的至少一种材料；阻挡层3用于阻挡反射层2表面的聚结效应，防止空洞的产生；
聚结抑制层4为双层结构，下层为由金属铝（Al）构成的铝层41，上层由铝基合金构成的铝基合金层2；聚结抑制层4用于在退火期间抑制接触电极中发生聚结效应而产生空洞；铝基合金层2为Al-Ag合金、Al-Cu合金、Al-Pd合金、Al-Rh合金、Al-Ni合金、Al-Ru合金或Al-Pt合金，铝层41的厚度小于铝基合金层42的厚度，在本发明中，铝层41的厚度为铝基合金层42的厚度的1/2；
氧化屏蔽层5选自Au、Ni、Pd、Cu、Rh、Ru或Pt中的一种或两种；氧化屏蔽层5用于防止聚结抑制层表面被氧化，而且还能用作叠层电极的表面保护层。氧化屏蔽层5可以是单层结构，此时氧化屏蔽层5可由Au、Ni、Pd、Cu、Rh、Ru或Pt中的一种来形成；氧化屏蔽层5也可以是双层结构，此时，氧化屏蔽层5可由Au、Ni、Pd、Cu、Rh、Ru或Pt中的两种来形成。
至此已对本发明做了详细的说明，但前文的描述的实施例仅仅只是本发明的优选实施例，其并非用于限定本发明。本领域技术人员在不脱离本发明精神的前提下，可对本发明做任何的修改，而本发明的保护范围由所附的权利要求来限定。
Claims (2)
1.一种双叠层电极发光器件，其特征在于：所述发光器件具有蓝宝石衬底；在蓝宝石衬底上依次具有低温缓冲层、n型掺杂层、多量子阱层、p型掺杂层、叠层p电极；其中n型掺杂层具有台阶结构，在台阶结构上具有叠层n电极；叠层p电极和叠层n电极具有相同的结构；其中，n型掺杂层由Al0.05In0.05Ga0.9N形成，p型掺杂层由Al0.1In0.05Ga0.85N形成；多量子阱层为n-Al0.045In0.055Ga0.9N层和n-AI0.045In0.055Ga0.9P层交替形成的周期结构，以一层n-Al0.045In0.055Ga0.9N层和一层n-AI0.045In0.055Ga0.9P作为一个周期，共形成20-30个周期；
具有相同结构的所述叠层p电极和叠层n电极包括：反射层、阻挡层、聚结抑制层以及氧化屏蔽层；
其中，反射层为三层结构，自下而上依次为：TiO2层、Ti3O5层以及Ta2O5层；阻挡层由导电的透明材料形成，所述导电的透明材料选自TiN、RuO、InO、MoO和IrO中的至少一种材料；聚结抑制层为双层结构，下层由金属铝(Al)构成，上层由铝基合金构成，其中，铝基合金为Al-Ag合金、Al-Cu合金、Al-Pd合金、Al-Rh合金、Al-Ni合金、Al-Ru合金或Al-Pt合金；氧化屏蔽层选自Au、Ni、Pd、Cu、Rh、Ru或Pt中的一种或两种。
2.如权利要求1所述的发光器件，其特征在于：
多量子阱层形成22、25或28个周期。
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| CN102157640A (zh) * | 2011-03-17 | 2011-08-17 | 中国科学院半导体研究所 | 具有p-GaN层表面粗化的GaN基LED芯片的制作方法 |
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| CN102157640A (zh) * | 2011-03-17 | 2011-08-17 | 中国科学院半导体研究所 | 具有p-GaN层表面粗化的GaN基LED芯片的制作方法 |
| CN103165770A (zh) * | 2013-02-28 | 2013-06-19 | 溧阳市宏达电机有限公司 | 一种台阶结构的高亮度发光二极管的制造方法 |
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