CN103534260A - 铜(i)络合物,尤其用于光电组件 - Google Patents
铜(i)络合物,尤其用于光电组件 Download PDFInfo
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- CN103534260A CN103534260A CN201280023097.7A CN201280023097A CN103534260A CN 103534260 A CN103534260 A CN 103534260A CN 201280023097 A CN201280023097 A CN 201280023097A CN 103534260 A CN103534260 A CN 103534260A
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- atom
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- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical class [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 230000005693 optoelectronics Effects 0.000 title claims description 13
- 239000003446 ligand Substances 0.000 claims abstract description 32
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Chemical group C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims abstract description 27
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims abstract description 20
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 20
- 125000003118 aryl group Chemical group 0.000 claims abstract description 18
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical group C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Chemical group COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims abstract description 9
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical group C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 claims abstract description 8
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims abstract description 7
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical group C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 claims abstract description 7
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Chemical group C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 claims abstract description 7
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical group C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 150000002466 imines Chemical group 0.000 claims abstract description 7
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical group C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 claims abstract description 7
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 claims abstract description 7
- UGUHFDPGDQDVGX-UHFFFAOYSA-N 1,2,3-thiadiazole Chemical group C1=CSN=N1 UGUHFDPGDQDVGX-UHFFFAOYSA-N 0.000 claims abstract description 6
- UDGKZGLPXCRRAM-UHFFFAOYSA-N 1,2,5-thiadiazole Chemical group C=1C=NSN=1 UDGKZGLPXCRRAM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 6
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 6
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 6
- JKFAIQOWCVVSKC-UHFFFAOYSA-N furazan Chemical group C=1C=NON=1 JKFAIQOWCVVSKC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000001072 heteroaryl group Chemical group 0.000 claims abstract description 6
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 6
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical group C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 claims abstract description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 4
- 125000001424 substituent group Chemical group 0.000 claims description 25
- 125000004122 cyclic group Chemical group 0.000 claims description 19
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 229910052736 halogen Inorganic materials 0.000 claims description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 8
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 claims description 8
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- 238000002360 preparation method Methods 0.000 claims description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 7
- -1 Phosphino Chemical group 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 150000002148 esters Chemical group 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- 125000003342 alkenyl group Chemical group 0.000 claims description 5
- 150000001412 amines Chemical group 0.000 claims description 5
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- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 125000004437 phosphorous atom Chemical group 0.000 claims description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- 229920000570 polyether Polymers 0.000 claims description 4
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000006096 absorbing agent Substances 0.000 claims description 3
- 125000000304 alkynyl group Chemical group 0.000 claims description 3
- 150000001408 amides Chemical group 0.000 claims description 3
- 125000001002 arsinoyl group Chemical group O=[AsH2]* 0.000 claims description 3
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 3
- 150000001879 copper Chemical class 0.000 claims description 3
- 229910052805 deuterium Inorganic materials 0.000 claims description 3
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- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
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- 125000005010 perfluoroalkyl group Chemical group 0.000 claims description 2
- 238000000859 sublimation Methods 0.000 claims description 2
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- 125000000547 substituted alkyl group Chemical group 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- 150000001721 carbon Chemical group 0.000 claims 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims 2
- 230000002708 enhancing effect Effects 0.000 claims 1
- 150000003852 triazoles Chemical class 0.000 claims 1
- 238000007704 wet chemistry method Methods 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 6
- 125000000061 phosphanyl group Chemical group [H]P([H])* 0.000 abstract description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 125000002971 oxazolyl group Chemical group 0.000 abstract 1
- KHUXNRRPPZOJPT-UHFFFAOYSA-N phenoxy radical Chemical group O=C1C=C[CH]C=C1 KHUXNRRPPZOJPT-UHFFFAOYSA-N 0.000 abstract 1
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- 238000012512 characterization method Methods 0.000 description 11
- 238000000921 elemental analysis Methods 0.000 description 11
- 238000000295 emission spectrum Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 6
- 0 C*C1=N*C(*)=C1* Chemical compound C*C1=N*C(*)=C1* 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
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- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical class [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229940117389 dichlorobenzene Drugs 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 2
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- 229920001223 polyethylene glycol Polymers 0.000 description 2
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
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- TWYYFYNJOJGNFP-CUXYNZQBSA-N (2s,4r,5s,6s)-2-[(4s,5r)-4-acetyloxy-5-methyl-3-methylidene-6-phenylhexyl]-2-carbamoyl-4-[[(e,4s,6s)-4,6-dimethyloct-2-enoyl]oxymethyl]-5-hydroxy-1,3-dioxane-4,5,6-tricarboxylic acid Chemical compound O1[C@H](C(O)=O)[C@](C(O)=O)(O)[C@](COC(=O)/C=C/[C@@H](C)C[C@@H](C)CC)(C(O)=O)O[C@]1(C(N)=O)CCC(=C)[C@@H](OC(C)=O)[C@H](C)CC1=CC=CC=C1 TWYYFYNJOJGNFP-CUXYNZQBSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- SZCBDIVMCGFVPW-UHFFFAOYSA-N 1-[4-(aminomethyl)-2,6-di(propan-2-yl)phenyl]-3-[1-butyl-4-(3-methoxyphenyl)-2-oxo-1,8-naphthyridin-3-yl]urea;hydrochloride Chemical compound Cl.CC(C)C=1C=C(CN)C=C(C(C)C)C=1NC(=O)NC=1C(=O)N(CCCC)C2=NC=CC=C2C=1C1=CC=CC(OC)=C1 SZCBDIVMCGFVPW-UHFFFAOYSA-N 0.000 description 1
- NEAQRZUHTPSBBM-UHFFFAOYSA-N 2-hydroxy-3,3-dimethyl-7-nitro-4h-isoquinolin-1-one Chemical compound C1=C([N+]([O-])=O)C=C2C(=O)N(O)C(C)(C)CC2=C1 NEAQRZUHTPSBBM-UHFFFAOYSA-N 0.000 description 1
- MITGKKFYIJJQGL-UHFFFAOYSA-N 9-(4-chlorobenzoyl)-6-methylsulfonyl-2,3-dihydro-1H-carbazol-4-one Chemical compound ClC1=CC=C(C(=O)N2C3=CC=C(C=C3C=3C(CCCC2=3)=O)S(=O)(=O)C)C=C1 MITGKKFYIJJQGL-UHFFFAOYSA-N 0.000 description 1
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- NPUXORBZRBIOMQ-RUZDIDTESA-N [(2R)-1-[[4-[[3-(benzenesulfonylmethyl)-5-methylphenoxy]methyl]phenyl]methyl]-2-pyrrolidinyl]methanol Chemical compound C=1C(OCC=2C=CC(CN3[C@H](CCC3)CO)=CC=2)=CC(C)=CC=1CS(=O)(=O)C1=CC=CC=C1 NPUXORBZRBIOMQ-RUZDIDTESA-N 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/547—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom
- C07F9/553—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom having one nitrogen atom as the only ring hetero atom
- C07F9/576—Six-membered rings
- C07F9/58—Pyridine rings
-
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Abstract
本发明涉及式A的铜(I)络合物,式(A),X*=Cl、Br、I、CN和/或SCN(彼此独立);N*∩E=双齿配体,其中E=式R2E(R=烷基、芳基、烷氧基、苯氧基或酰胺)的膦基/胂基;N*=亚胺官能团,它是N-杂芳族5元环或6元环的组成部分,选自噁唑、咪唑、噻唑、异噁唑、异噻唑、吡唑、1,2,3-三唑、1,2,3-噁二唑、1,2,5-噁二唑、1,2,3-噻二唑、1,2,5-噻二唑、吡啶、嘧啶、三嗪、吡嗪、哒嗪;和“∩”=至少一个碳原子,它也是芳族基团的组成部分,其中所述碳原子既直接与亚胺-氮原子相邻又直接与磷原子或砷原子相邻。
Description
本发明涉及通式A的铜(I)络合物,其尤其是用于光电组件中。
简述
目前在显示技术和照明技术领域中出现剧烈变化。生产厚度低于0.5mm的平面显示器或照明平面是可能的。这种新技术基于OLED,(Organic Light Emitting Diodes有机发光二极管)的原理。
这类组件主要由有机层构成。在例如5V至10V的电压的情况下,在薄的电子传导层中的电子离开导电金属层例如离开铝阴极,并向阳极方向迁移。这包括例如,由透明但导电的薄的氧化铟锡层,正载流子,所谓的空穴向迁移至有机空穴传导层。这些空穴在与电子相反的方向上运动,即运动至阴极。在中间层中,即同样由有机材料构成的发射层中另外存在特殊的发射体分子,两种电荷载流子在其上或在其附近重新结合,并在此导致发射体分子的中性、但有能量的激发态。该激发态随后将其能量作为明亮的光发射释放出来,例如以蓝色、绿色或红色。还可以实现白光的发射。如果发射体分子位于空穴-传导层或电子-传导层中,任选地还可以省略发射层。
对有效的OLED的构建而言关键的是所用的发光材料(发射体分子)。这可以以不同的方式来实现,更确切地说使用纯的有机或金属有机分子以及络合化合物。可以指出,具有金属有机物质的OLED,即所谓的三重态发射体的光输出可以显著地大于纯的有机材料。由于这种性质,使得金属有机材料的进一步开发具有非常重要的意义。在使用高发射量子产率的金属有机络合物(包括最低的三重态向单重基态的跃迁)的情况下,可以实现装置特别高的效率。这种材料通常被称为三重态发射体或磷光发射体。
在这种背景下,本发明的目的是提供适用于光电组件的新型化合物。
发明描述
本发明所基于的技术问题通过提供式Cu4X*4(Ε∩Ν*)2的铜(I)络合物得以解决,所述络合物具有根据式A的结构:
其中:
X*=Cl、Br、I、CN和/或SCN(彼此独立,使得络合物可以具有4个相同或4个不同的原子X*);
E=R2As和/或R2P;
Ν*∩Ε=双齿配体,其中E=式R2E(R=烷基、芳基、烷氧基、苯氧基、酰胺)的膦基(Phosphanyl)/胂基(Arsenyl);N*=亚胺官能团。"∩"是碳原子。E尤其是Ph2P-基团(Ph=苯基),亚胺官能团是N-杂芳环族5元环或6元环的组成部分,所述5元环或6元环例如是噁唑、咪唑、噻唑、异噁唑、异噻唑、吡唑、1,2,3-三唑、1,2,3-噁二唑、1,2,5-噁二唑、1,2,3-噻二唑、1,2,5-噻二唑、吡啶、嘧啶、三嗪、吡嗪或哒嗪。"∩"也是所述芳族基团的组成部分。碳原子既直接与亚胺-氮原子相邻又直接与E-原子相邻。Ν*∩Ε可以任选被取代,尤其是被提高铜(I)络合物在常规有机溶剂中的溶解度以用于制备OLED组件的基团取代。常规有机溶剂除了醇,包括醚、烷烃以及卤代脂族和芳族烃和烷基化的芳族烃,尤其是甲苯、氯苯、二氯苯、均三甲苯、二甲苯、四氢呋喃、苯乙醚、苯丙酮。
根据本发明的铜(I)络合物优选由两种相同的配体Ν*∩Ε构成,从而降低了合成复杂性和因此降低了制备成本。使用铜作为核心金属的巨大优势是其低廉的价格,尤其是相较于通常在OLED-发射体中的常规金属,例如Re、Os、Ir和Pt。另外,对于其应用,还提及铜的低毒性。
关于其在光电组件中的用途,根据本发明的铜(I)络合物通过宽的可实现的发光颜色范围而出众。此外,发射量子产率高,尤其是大于50%。对于具有Cu-核心离子的发射体络合物来说,发射衰减时间出奇地短。
另外,根据本发明的铜(I)络合物可以在相对高的发射体浓度下使用而没有明显的淬灭效应。也就是说,在发射体层中可以使用5%至100%的发射体浓度。
优选地,配体Ν*∩Ε是噁唑、咪唑、噻唑、异噁唑、异噻唑、吡唑、1,2,3-三唑、1,2,3-噁二唑、1,2,5-噁二唑、1,2,3-噻二唑、1,2,5-噻二唑、吡啶、嘧啶、三嗪、吡嗪和/或哒嗪,如本文所述,它们可以各自被取代。
优选地,配体Ν*∩Ε是下列配体:
2E*R1 2-4R2-5R3-6R4-嘧啶
其中
X=O或NR2
Y=O或NR2或S
E*=As或P
R1-R5可以各自独立地是氢、卤素,或者是经由氧原子(-OR)、氮原子(-NR2)或硅原子(-SiR3)连接的取代基,以及烷基(也包括支链或环状的)、芳基、杂芳基、烯基、炔基,或者具有取代基的经取代的烷基(也包括支链或环状的)、芳基、杂芳基和烯基,所述取代基例如卤素或氘、烷基(也包括支链或环状的),和其它公知的供体基团和受体基团,例如胺、羧酸基及其酯,以及CF3-基团。R2-R5还可以任选地形成稠环体系。
特别优选地,配体Ν*∩Ε是下列配体:
其中所用的符号如上所述。
本发明还涉及用于制备根据本发明的铜(I)络合物的方法。所述根据本发明的方法包括进行Ν*∩Ε与Cu(I)X*的反应的步骤,
其中
X*=Cl、Br、I、CN和/或SCN(彼此独立)
Ν*∩Ε=双齿配体,其中
E=式R2E(R=烷基、芳基、烷氧基、苯氧基或酰胺)的膦基/胂基;
N*=亚胺官能团,所述官能团是N-杂芳族5元环或6元环的组成部分,所述5元环或6元环例如是噁唑、咪唑、噻唑、异噁唑、异噻唑、吡唑、1,2,3-三唑、1,2,3-噁二唑、1,2,5-噁二唑、1,2,3-噻二唑、1,2,5-噻二唑、吡啶、嘧啶、三嗪、吡嗪和/或哒嗪。
“∩”=至少一个碳原子,它同样是芳族基团的组成部分,其中碳原子既直接与亚胺-氮原子相邻又直接与磷原子或砷原子相邻。
进一步在下文描述用于提高络合物在有机溶剂中的溶解度的任选在配体Ν*∩Ε上存在至少一个取代基。
所述反应优选地在二氯甲烷(DCM)中进行。通过向已溶解的产品中添加乙醚可以获得固体。后者可以通过沉淀或扩散或在超声浴中进行。
在2个单位的双齿Ρ∩Ν*-配体(Ρ∩Ν*=膦配体,定义见下文)与4个单位的Cu(I)X*(X*=Cl、Br、I、CN、SCN)的反应,优选在二氯甲烷(DCM)中,优选在室温下进行,产生四个核心的4:2-络合物Cu4X*4(Ρ∩Ν*)2,其中4个Cu-原子构成八面体的基础面和2个卤素离子构成其尖端(Gl.1)。其它2个卤素离子将八面体-基础面的两个相对的侧边桥接起来,而两个Ρ∩Ν*-配体将八面体-基础面的另外两个相对的侧边以螯合形式与N-原子和P-原子桥接起来,以及因此使得Cu-原子配位饱和。
因此,通过Cu(I)X*与双齿Ρ∩Ν*-配体的反应可以仅在一个步骤中获得络合物。该络合物可以通过用Et2O沉淀为白色微晶粉末分离。通过将Et2O缓慢地扩散到反应溶液中可以得到单晶。可以通过元素分析和X射线结构分析来鉴定络合物。
在此涉及前面提到的通式A。双齿Ε∩Ν*-配体可以彼此独立地包含至少一个取代基:所述取代基可以各自独立地是氢、卤素,或者是经由氧原子(-OR)、氮原子(-NR2)或硅原子(-SiR3)连接的取代基,以及烷基(也包括支链或环状的)、芳基、杂芳基、烯基、炔基,或者具有取代基的经取代的烷基-(也包括支链或环状的)、芳基-、杂芳基-和烯基-,所述取代基例如卤素或氘、烷基基团(也包括支链或环状的),和其它公知的供体基团和受体基团,例如胺、羧酸基及其酯,以及CF3-基团。取代基还可以任选地形成稠环体系。
溶解度
在借助湿化学方法制备光电组件时有利的是,有针对性地调整溶解度。由此可以避免溶解或部分溶解已经涂覆的层。通过引入特殊的取代基可以强烈地影响溶解度性质。由此可能的是,使用正交的溶剂,它们各自仅溶解当前步骤处理的物质,而不会溶解位于下面的一层或多层的物质。为了该目的,可以如此选择取代基R2-R5,使得它们能够调节溶解度。给出选择相应的取代基的以下可能性:
在非极性介质中的溶解度
非极性的取代基R2-R5提高在非极性溶剂中的溶解度,并降低在极性溶剂中的溶解度。非极性基团例如是烷基基团[CH3-(CH2)n-](n=1-30),还有支链或环状的,经取代的,例如被卤素取代的烷基基团。在此特别强调:部分氟化或全氟化的烷基基团,以及全氟化的低聚醚和聚醚,例如[-(CF2)2-O]n–和(-CF2-O)n-(n=2-500)。其它非极性基团是:醚-OR*、硫醚-SR*、不同取代的硅烷R*3Si-(R*=烷基或芳基)、硅氧烷R*3Si-O-、低聚硅氧烷R**(-R2Si-O)n-(R**=R*,n=2-20)、聚硅氧烷R**(-R*2Si-O)n-(n>20);低聚/聚磷腈R**(-R*2P=N-)n-(n=1-200)。
在极性介质中的溶解度
极性的取代基R2-R5提高了在极性溶剂中的溶解度。所述极性取代基可以是:
·醇基:-OH
·羧酸残基、膦酸残基、磺酸残基以及它们的盐和酯(R*=H、烷基、芳基、卤素;阳离子:碱金属、铵盐):
-COOH、-P(O)(OH)2、-P(S)(OH)2、-S(O)(OH)2、-COOR*、-P(O)(OR*)2、-P(S)(OR*)2、-S(O)(OR*)2,-CONHR*、-P(O)(NR*2)2、-P(S)(NR*2)2、-S(O)(NR*2)2
·亚砜:-S(O)R*、-S(O)2R*
·羰基基团:-C(O)R*
·胺:-NH2、-NR*2、-N(CH2CH2OH)2,
·羟胺:=NOR*
·低聚酯:-O(CH2O-)n、-O(CH2CH2O-)n(n=2-200)
·带正电荷的取代基:例如铵盐-N+R*3X-、鏻盐-P+R*3X-
·带负电荷的取代基:例如硼酸盐-(BR*3)-、铝酸盐-(A1R*3)-(碱金属或铵离子可以起阴离子的作用)。
为了改善根据本发明的铜(I)络合物在有机溶剂中的溶解度,至少一个结构Ν*∩Ε以优选的方式被至少一个取代基所取代。所述取代基可以选自:
-长度为C1至C30的长链的,支链或非支链或环状的烷基链,优选长度为C3至C20,特别优选长度为C5至C15;
-长度为C1至C30的长链的,支链或非支链或环状的烷氧基链,优选长度为C3至C20,特别优选长度为C5至C15;
-长度为C1至C30的支链或非支链或环状的全氟烷基链,和优选长度为C3至C20,特别优选长度为C5至C15,和
-短链的聚醚,例如式(-OCH2CH2O-)n的聚合物,其中n<500。对此的实例是聚乙二醇(PEG),其可以作为化学惰性的,水溶性和非毒性的链长为3至50个重复单元的聚合物使用。
在本发明优选的实施方案中,用极性基团修饰烷基链或烷氧基链或全氟烷基链,例如用醇、醛、缩醛、胺、脒、羧酸、羧酸酯、羧酸酰胺、酰亚胺、羧酸卤化物、羧酸酐、醚、卤素、异羟肟酸、肼、腙、羟胺、内酯、内酰胺、腈、异腈、异氰酸酯、异硫氰酸酯、肟、亚硝基芳族化合物(Nitrosoaryle)、硝基烷烃(Nitroalkyle)、硝基芳族化合物(Nitroaryle)、酚、磷酸酯和/或膦酸、硫醇、硫醚、硫醛、硫酮、硫缩醛、硫代羧酸、硫代酯、二硫代酸二硫代酸酯、亚砜、砜、磺酸、磺酸酯、亚磺酸、亚磺酸酯、次磺酸、次磺酸酯、硫代亚磺酸、硫代亚磺酸酯、硫代磺酸、硫代磺酸酯、磺酰胺、硫代磺酰胺、亚磺酰胺(Sulfinamide)、次磺酰胺(Sulfenamide)、硫酸酯/盐、硫代硫酸酯/盐、磺内酯、磺内酰胺、三烷基甲硅烷基和三芳基甲硅烷基,以及三烷氧基甲硅烷基,它们进一步提高溶解度。
溶解度的非常显著的提高自至少一个支链或非支链或环状的C6-单元来实现。例如用直链C6-链取代(见下文)导致在例如二氯甲烷中的非常好的溶解度,和导致在二氯苯或氯苯中的非常好的溶解度。
所描述的方法可以任选地包括下列步骤,即至少一种配体Ν*∩Ε被至少一个用于提高在期望的有机溶剂中的溶解度的取代基所取代,其中,在本发明的一种实施方案中,所述取代基可以选自上述基团。
根据本发明还有通过这样的合成方法可制备的铜(I)络合物。
式A的铜(I)络合物根据本发明可以用作发光光电组件的发射层中的发射体材料。所述光电组件优选如下:有机发光组件(OLED)、发光电化学电池、OLED-传感器(尤其是非密封的向外部屏蔽的气体传感器和蒸汽传感器)、有机太阳能电池、有机场效应晶体管、有机激光器和降频转换元件。
在本发明的一种实施方案中,这类光电组件中在发射体层或吸收体层中的铜(I)络合物的份额为100%。在可选的实施方案中,在发射体层或吸收体层中的铜(I)络合物的份额为1%至99%。
在用于制备光电组件的方法中,其中使用根据本发明的铜(I)络合物,可以将这类铜(I)络合物涂覆在载体材料上。所述涂覆可以借助于胶体悬浮体或借助于升华以湿化学法进行。
本发明的另一方面涉及用于改变电子组件的发射性质和/或吸收性质的方法。在此,将根据本发明的铜(I)络合物引入基体材料中,用于电子或空穴在光电组件中的传导。
本发明的另一方面涉及根据本发明的铜(I)络合物的用途,尤其是在光电组件中的用途,用于将UV-辐射或蓝光转换成可见光,特别是转换成绿色、黄色或红色的光(降频)。
在另一方面,本发明涉及式B的双齿配体,尤其是用于制备式A的铜络合物,以及制备这类配体的方法。
式B中使用的符号对应于本文中描述式A所用的符号。
用于制备式B的双齿配体的方法根据以下所示的方案来进行:
优选地,用于制备式B的双齿配体的方法根据以下所示的方案来进行:
以上使用的符号对应于本文中描述式A所用的符号。
实施例:
在此展示的实施例中,通式A的配体Ε∩Ν*是配体P∩Ν*(其中E=Ph2P)
对于铜络合物的制备,使用对应于上述描述的双齿配体噁唑,咪唑,噻唑,异噁唑,异噻唑,吡唑,1,2,3-三唑,1,2,3-噁二唑,1,2,5-噁二唑,1,2,3-噻二唑,1,2,5-噻二唑,吡啶,嘧啶,三嗪,吡嗪,哒嗪:
在咪唑、噻唑和1H-1,2,3-三唑和吡啶、嘧啶、三嗪、吡嗪、哒嗪的情况下根据文献规定制备配体,而所有其它膦配体(Phosphanliganden)至今为止还不是公知的,并因此按照新的合成方法示出。
膦配体的通用合成
配体的确认通过NMR-光谱和质谱明确地证实。
式Cu4X*4(P∩N*)2的络合物的实例
I.P∩N*=Ph2P苯并咪唑,1a-e:Cu4I4(Ph2P苯并咪唑)2,2a-e
化合物2a-e是白色、细晶状固体。
表征:
元素分析:
图1-2中示出了2b、2c、2e的晶体结构。
图4-7中显示了2a-c、2e的发射光谱。
II.P∩N*=Ph2PMe2苯并咪唑,3a-e:Cu4I4(Ph2PMe2苯并咪唑)2,4a-e
化合物4a-g是白色、细晶状固体。
表征:
元素分析:
图8-10中示出了4c、4d、4e的晶体结构。
图11-15中显示了4a、4c、4d、4f、4g的发射光谱。
III.P∩N*=Ph2苯并咪唑,5a-d:Cu4I4(Ph2苯并咪唑)2,6a-d
化合物6a-d是白色、细晶状固体。
表征:
元素分析:
图16中示出了6a的晶体结构。
图17-20中示出了6a-d的发射光谱。
IV.P∩N*=Ph2P咪唑,7a-c:Cu4I4(Ph2P咪唑)2,8a-c
化合物8a-c是白色、细晶状固体。
表征:
元素分析:
图21-23中示出了8a-c的发射光谱。
V.P∩N*=Ph2P苯并噁唑,9a:Cu4I4(Ph2P苯并噁唑)2,10a
化合物10a是白色、细晶状固体。
表征:
元素分析:
图24中显示了10a的发射光谱。
VI.P∩N*=Ph2PPh2三唑,11a:Cu4I4(Ph2PPh2三唑)2,12a
化合物12a是白色、细晶状固体。
表征:
图25中示出了12a的晶体结构。
VII.P∩N*=Ph2P-1,2,4-三唑,13a-e:Cu4I4(Ph2P-1,2,4-三唑)2,14a-e
化合物14a-e是白色、细晶状固体。
表征:
元素分析:
图26-30中显示了14a-e的发射光谱。
VIII.P∩N*=Ph2PPh2噁唑,15a:Cu4I4(Ph2PPh2噁唑)2,16a
化合物16a是白色、细晶状固体。
表征:
元素分析:
IX.P∩N*=Ph2P噻唑,17a:Cu4I4(Ph2P噻唑)2,18a
化合物18a是白色、细晶状固体。
表征:
元素分析:
图31中示出了18a的发射光谱。
X.P∩N*=Ph2P吡啶,19a-g:Cu4I4(Ph2P吡啶)2,20a-g
化合物20a-h是黄色、细晶状固体。
表征:
元素分析:
图32中示出了20e的晶体结构。
图33-39中显示了20a-g的发射光谱。
XI.P∩N*=Ph2P嘧啶,21a:Cu4I4(Ph2P嘧啶)2,22a
化合物22a是黄色、细晶状固体。
表征:
元素分析:
图40中显示了22a的发射光谱。
Claims (16)
1.式A的铜(I)络合物
其中:
X*=Cl、Br、I、CN和/或SCN(彼此独立)
Ν*∩Ε=双齿配体,其中
E=式R2E(R=烷基、芳基、烷氧基、苯氧基或酰胺)的膦基/胂基;
N*=N-杂芳族5元环的组成部分的亚胺官能团,所述5元环选自噁唑、咪唑、噻唑、异噁唑、异噻唑、吡唑、1,2,3-三唑、1,2,3-噁二唑、1,2,5-噁二唑、1,2,3-噻二唑和1,2,5-噻二唑,或者N-杂芳族6元环的组成部分的亚胺官能团,所述6元环选自吡啶、嘧啶、三嗪、吡嗪和哒嗪;
“∩”=至少一个碳原子,它也是芳族基团的组成部分,其中碳原子既直接与亚胺-氮原子相邻又直接与磷原子或砷原子相邻;
其中,Ν*∩Ε任选地具有至少一个取代基,其用于提高铜(I)络合物在有机溶剂中的溶解度。
2.根据权利要求1的铜(I)络合物,其中Ν*∩Ε选自:
2E*R1 2-4R2-5R3-6R4-嘧啶
2E*R1 2-4R2-6R3-1,3,5-三嗪
3E*R1 2-4R2-5R3-6R4-哒嗪
4E*R1 2-2R2-5R3-6R4-嘧啶
其中
X=O或NR2
Y=O或NR2或S
E*=As或P
R1-R5可以各自独立地是氢、卤素,或者是经由氧原子(-OR)、氮原子(-NR2)或硅原子(-SiR3)连接的取代基,以及烷基(也包括支链或环状的)、芳基、杂芳基、烯基、炔基,或者具有取代基的经取代的烷基(也包括支链或环状的)、芳基、杂芳基和烯基,所述取代基例如卤素或氘、烷基(也包括支链或环状的),和其它公知的供体基团和受体基团,例如胺、羧酸基及其酯,以及CF3-基团。R2-R5还可以任选地形成稠环体系。
3.根据权利要求1或2的铜(I)络合物,其中用于提高溶解度的取代基选自:
-长度为C1至C30的支链或非支链或环状的长链烷基链;
-长度为C1至C30的支链或非支链或环状的长链烷氧基链;
-长度为C1至C30的支链或非支链或环状的长链全氟烷基链,和
-链长为3至50个重复单元的短链聚醚。
4.用于制备根据权利要求1至3的铜(I)络合物的方法,该方法包括下列步骤:
进行Ν*∩Ε与Cu(I)X*的反应,
其中,
X*=Cl、Br、I、CN和/或SCN(彼此独立)
Ν*∩Ε=双齿配体,其中
E=R2E型膦基/胂基(R=烷基、芳基、烷氧基、苯氧基或酰胺);
N*=N-杂芳族5元环的组成部分的亚胺官能团,所述5元环选自噁唑、咪唑、异噁唑、吡唑、三唑和噁二唑,或者N-杂芳族6元环的组成部分的亚胺官能团,所述6元环选自吡啶、嘧啶、三嗪、吡嗪和哒嗪;
“∩”=至少一个碳原子,它也是芳族基团的组成部分,其中碳原子既直接与亚胺-氮原子相邻又直接与磷原子或砷原子相邻。
5.根据权利要求4的方法,其中所述反应在二氯甲烷中进行。
6.根据权利要求4或5的方法,还包括添加乙醚或戊烷的步骤,用于获得固体形式的铜(I)络合物。
7.根据权利要求4至6的方法,还包括用至少一个取代基取代至少一个配体Ν*∩Ε的步骤,所述取代基可以选自:
-长度为C1至C30的支链或非支链或环状的长链烷基链,
-长度为C1至C30的支链或非支链或环状的长链烷氧基链,
-长度为C1至C30的支链或非支链或环状的全氟烷基链,和
-短链的聚醚。
8.根据权利要求1至3的铜(I)络合物作为光电组件中的发射体或吸收体的用途。
9.根据权利要求8的用途,其中所述光电组件选自:
有机发光组件(OLED),
发光电化学电池,
OLED-传感器,尤其是非密封的向外部屏蔽的气体传感器和蒸汽传感器,
有机太阳能电池,
有机场效应晶体管,
有机激光器,和
降频转换元件。
10.具有根据权利要求1至3的铜(I)络合物的光电组件。
11.根据权利要求10的光电组件,它被构造成组件,所述组件选自有机发光组件、有机二极管、有机太阳能电池、有机晶体管、有机发光二极管、发光电化学电池、有机场效晶体管和有机激光器。
12.用于制备光电组件的方法,其中使用根据权利要求1至3的铜(I)络合物。
13.根据权利要求12的方法,其特征在于,将根据权利要求1至3的铜(I)络合物涂覆在载体上。
14.根据权利要求13的方法,其特征在于,所述涂覆借助于胶体悬浮体或借助于升华以湿化学法来进行。
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DE102011080240A1 (de) | 2011-08-02 | 2013-02-07 | Cynora Gmbh | Singulett-Harvesting mit zweikernigen Kupfer(I)-Komplexen für opto-elektronische Vorrichtungen |
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- 2012-05-14 EP EP12721517.6A patent/EP2707374B1/de active Active
- 2012-05-14 CN CN201280023097.7A patent/CN103534260A/zh active Pending
- 2012-05-14 WO PCT/EP2012/058957 patent/WO2012156378A1/de active Application Filing
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Cited By (7)
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US9447246B2 (en) | 2011-07-08 | 2016-09-20 | Cynora Gmbh | Method of covalently bonding an organic metal complex to a polymer |
CN111848676A (zh) * | 2020-08-21 | 2020-10-30 | 郑州大学 | 一种基于苯并咪唑双膦配体的发光铜化合物及其制备方法 |
CN111892628A (zh) * | 2020-08-21 | 2020-11-06 | 郑州大学 | 一种基于吡啶并咪唑双膦衍生物的发光铜(i)配合物及其制备方法 |
CN111892628B (zh) * | 2020-08-21 | 2021-05-11 | 郑州大学 | 一种基于吡啶并咪唑双膦衍生物的发光铜(i)配合物及其制备方法 |
CN111848676B (zh) * | 2020-08-21 | 2021-06-29 | 郑州大学 | 一种基于苯并咪唑双膦配体的发光铜化合物及其制备方法 |
CN113563380A (zh) * | 2021-07-29 | 2021-10-29 | 郑州大学 | 一种基于三氮唑膦衍生物的高效发光亚铜配合物及其制备方法 |
CN113563380B (zh) * | 2021-07-29 | 2022-10-14 | 郑州大学 | 一种基于三氮唑膦衍生物的高效发光亚铜配合物及其制备方法 |
Also Published As
Publication number | Publication date |
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EP2707374A1 (de) | 2014-03-19 |
JP2014522391A (ja) | 2014-09-04 |
US9490431B2 (en) | 2016-11-08 |
EP2707374B1 (de) | 2016-03-02 |
US20140166944A1 (en) | 2014-06-19 |
WO2012156378A1 (de) | 2012-11-22 |
KR20140026540A (ko) | 2014-03-05 |
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