CN103515480B - 制造厚膜电极的方法 - Google Patents
制造厚膜电极的方法 Download PDFInfo
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- CN103515480B CN103515480B CN201310245142.XA CN201310245142A CN103515480B CN 103515480 B CN103515480 B CN 103515480B CN 201310245142 A CN201310245142 A CN 201310245142A CN 103515480 B CN103515480 B CN 103515480B
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- electrocondution slurry
- membrane electrode
- conductive powder
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
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- 238000000034 method Methods 0.000 claims abstract description 29
- 239000002904 solvent Substances 0.000 claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 9
- 238000005476 soldering Methods 0.000 claims abstract description 6
- 239000002002 slurry Substances 0.000 claims description 111
- 239000012528 membrane Substances 0.000 claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 38
- 230000004888 barrier function Effects 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 14
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- 239000010703 silicon Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
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- 239000010931 gold Substances 0.000 claims description 6
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
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- 229910052759 nickel Inorganic materials 0.000 claims description 3
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- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
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- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
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- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
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- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
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- 229920000896 Ethulose Polymers 0.000 description 1
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
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- 239000004020 conductor Substances 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
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- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
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- LCDFWRDNEPDQBV-UHFFFAOYSA-N formaldehyde;phenol;urea Chemical compound O=C.NC(N)=O.OC1=CC=CC=C1 LCDFWRDNEPDQBV-UHFFFAOYSA-N 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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- RBNWAMSGVWEHFP-WAAGHKOSSA-N terpin Chemical compound CC(C)(O)[C@H]1CC[C@@](C)(O)CC1 RBNWAMSGVWEHFP-WAAGHKOSSA-N 0.000 description 1
- 229950010257 terpin Drugs 0.000 description 1
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- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Dispersion Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261661509P | 2012-06-19 | 2012-06-19 | |
US61/661,509 | 2012-06-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103515480A CN103515480A (zh) | 2014-01-15 |
CN103515480B true CN103515480B (zh) | 2017-04-12 |
Family
ID=48578957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310245142.XA Active CN103515480B (zh) | 2012-06-19 | 2013-06-19 | 制造厚膜电极的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8815638B2 (zh) |
EP (1) | EP2677523A3 (zh) |
JP (1) | JP2014053287A (zh) |
KR (1) | KR20130142951A (zh) |
CN (1) | CN103515480B (zh) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
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US20150007874A1 (en) * | 2013-07-02 | 2015-01-08 | E I Du Pont De Nemours And Company | Back-contact solar cell module |
US20160204303A1 (en) * | 2013-08-21 | 2016-07-14 | Gtat Corporation | Using an active solder to couple a metallic article to a photovoltaic cell |
US20150099326A1 (en) * | 2013-10-08 | 2015-04-09 | E I Du Pont De Nemours And Company | Solar cell and manufacturing method of the same |
KR101614190B1 (ko) * | 2013-12-24 | 2016-04-20 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
EP3920200A1 (en) | 2014-05-05 | 2021-12-08 | 3D Glass Solutions, Inc. | 2d and 3d inductors antenna and transformers fabricating photoactive substrates |
DE112014006910T5 (de) * | 2014-08-28 | 2017-05-18 | E.I. Du Pont De Nemours And Company | Kupferhaltige leitfähige Pasten und daraus hergestellte Elektroden |
WO2016029398A1 (en) | 2014-08-28 | 2016-03-03 | E.I. Du Pont De Nemours And Company | Solar cells with copper electrodes |
DE112014006907T5 (de) | 2014-08-28 | 2017-06-08 | E.I. Du Pont De Nemours And Company | Kupfer enthaltende leitfähige Pasten und daraus hergestellte Elektroden |
CN104393057B (zh) * | 2014-12-09 | 2016-08-17 | 无锡同春新能源科技有限公司 | 用石墨烯汇流线和汇流条提高输电量的晶体硅太阳能电池 |
KR20160076393A (ko) * | 2014-12-22 | 2016-06-30 | 엘지전자 주식회사 | 태양 전지 모듈 |
US10189950B2 (en) | 2015-12-22 | 2019-01-29 | E I Du Pont De Nemours And Company | Polyimide-based polymer thick film compositions |
WO2017147511A1 (en) | 2016-02-25 | 2017-08-31 | 3D Glass Solutions, Inc. | 3d capacitor and capacitor array fabricating photoactive substrates |
WO2017177171A1 (en) | 2016-04-08 | 2017-10-12 | 3D Glass Solutions, Inc. | Methods of fabricating photosensitive substrates suitable for optical coupler |
JP6339754B1 (ja) * | 2016-09-28 | 2018-06-06 | 京セラ株式会社 | 太陽電池素子 |
JP7150342B2 (ja) | 2017-04-28 | 2022-10-11 | スリーディー グラス ソリューションズ,インク | Rfサーキュレータ |
EP3649733A1 (en) | 2017-07-07 | 2020-05-13 | 3D Glass Solutions, Inc. | 2d and 3d rf lumped element devices for rf system in a package photoactive glass substrates |
JP6807462B2 (ja) * | 2017-08-29 | 2021-01-06 | 京セラ株式会社 | 太陽電池素子および太陽電池モジュール |
WO2019118761A1 (en) | 2017-12-15 | 2019-06-20 | 3D Glass Solutions, Inc. | Coupled transmission line resonate rf filter |
WO2019136024A1 (en) | 2018-01-04 | 2019-07-11 | 3D Glass Solutions, Inc. | Impedance matching conductive structure for high efficiency rf circuits |
US11076489B2 (en) | 2018-04-10 | 2021-07-27 | 3D Glass Solutions, Inc. | RF integrated power condition capacitor |
KR102475010B1 (ko) | 2018-05-29 | 2022-12-07 | 3디 글래스 솔루션즈 인코포레이티드 | 저 삽입 손실 rf 전송 라인 |
AU2019344542B2 (en) | 2018-09-17 | 2022-02-24 | 3D Glass Solutions, Inc. | High efficiency compact slotted antenna with a ground plane |
WO2020139951A1 (en) | 2018-12-28 | 2020-07-02 | 3D Glass Solutions, Inc. | Heterogenous integration for rf, microwave and mm wave systems in photoactive glass substrates |
WO2020139955A1 (en) | 2018-12-28 | 2020-07-02 | 3D Glass Solutions, Inc. | Annular capacitor rf, microwave and mm wave systems |
WO2020203725A1 (ja) | 2019-03-29 | 2020-10-08 | 古河電気工業株式会社 | 基板とカーボンナノチューブ線材の接続構造体 |
AU2020252397A1 (en) * | 2019-04-05 | 2021-07-01 | Memstim, Llc | Method for manufacturing an electrode array for a neuroprosthetic device |
AU2020253553A1 (en) | 2019-04-05 | 2021-10-28 | 3D Glass Solutions, Inc. | Glass based empty substrate integrated waveguide devices |
EP3948954B1 (en) | 2019-04-18 | 2023-06-14 | 3D Glass Solutions, Inc. | High efficiency die dicing and release |
EP4121988A4 (en) | 2020-04-17 | 2023-08-30 | 3D Glass Solutions, Inc. | BROADBAND INDUCTOR |
Citations (2)
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CN101009334A (zh) * | 2005-12-21 | 2007-08-01 | E.I内穆尔杜邦公司 | 用于太阳能电池电极的糊剂、制造太阳能电池电极的方法、以及太阳能电池 |
CN101192629A (zh) * | 2006-11-29 | 2008-06-04 | 三洋电机株式会社 | 太阳能电池模块 |
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US4127424A (en) * | 1976-12-06 | 1978-11-28 | Ses, Incorporated | Photovoltaic cell array |
US20060231802A1 (en) | 2005-04-14 | 2006-10-19 | Takuya Konno | Electroconductive thick film composition, electrode, and solar cell formed therefrom |
US7771623B2 (en) * | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
JP5203970B2 (ja) * | 2006-12-25 | 2013-06-05 | ナミックス株式会社 | 結晶系シリコン基板の電極形成用導電性ペースト |
EP2504843A1 (en) * | 2009-11-25 | 2012-10-03 | E.I. Du Pont De Nemours And Company | Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell |
US20110278507A1 (en) * | 2010-05-11 | 2011-11-17 | E. I. Du Pont De Nemours And Company | Thick film silver pastes containing iodonium and/or sulfonium salts and their use in photovoltaic cells |
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JP2014053287A (ja) | 2014-03-20 |
EP2677523A3 (en) | 2014-08-27 |
US20130337604A1 (en) | 2013-12-19 |
US8815638B2 (en) | 2014-08-26 |
CN103515480A (zh) | 2014-01-15 |
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