CN103502514A - Iii族氮化物结晶的制造方法和iii族氮化物结晶 - Google Patents

Iii族氮化物结晶的制造方法和iii族氮化物结晶 Download PDF

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Publication number
CN103502514A
CN103502514A CN201280018140.0A CN201280018140A CN103502514A CN 103502514 A CN103502514 A CN 103502514A CN 201280018140 A CN201280018140 A CN 201280018140A CN 103502514 A CN103502514 A CN 103502514A
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CN
China
Prior art keywords
group iii
iii nitride
crystal
plane
nitride crystal
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Pending
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CN201280018140.0A
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English (en)
Chinese (zh)
Inventor
松本创
洲崎训任
藤户健史
长尾哲
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of CN103502514A publication Critical patent/CN103502514A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
CN201280018140.0A 2011-04-15 2012-04-13 Iii族氮化物结晶的制造方法和iii族氮化物结晶 Pending CN103502514A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011-091586 2011-04-15
JP2011091586 2011-04-15
JP2011-151709 2011-07-08
JP2011151709A JP2012231103A (ja) 2011-04-15 2011-07-08 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶
PCT/JP2012/060187 WO2012141317A1 (ja) 2011-04-15 2012-04-13 Iii族窒化物結晶の製造方法およびiii族窒化物結晶

Publications (1)

Publication Number Publication Date
CN103502514A true CN103502514A (zh) 2014-01-08

Family

ID=47009475

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280018140.0A Pending CN103502514A (zh) 2011-04-15 2012-04-13 Iii族氮化物结晶的制造方法和iii族氮化物结晶

Country Status (6)

Country Link
US (1) US9502241B2 (https=)
EP (1) EP2698456B1 (https=)
JP (1) JP2012231103A (https=)
KR (1) KR101882541B1 (https=)
CN (1) CN103502514A (https=)
WO (1) WO2012141317A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015020161A1 (ja) * 2013-08-08 2015-02-12 三菱化学株式会社 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ単結晶の製造方法および半導体デバイスの製造方法
CN105917035B (zh) 2014-01-17 2019-06-18 三菱化学株式会社 GaN基板、GaN基板的制造方法、GaN结晶的制造方法和半导体器件的制造方法
JP6562842B2 (ja) * 2014-02-07 2019-08-21 日本碍子株式会社 複合基板、発光素子及びそれらの製造方法
CN107574479A (zh) * 2017-08-14 2018-01-12 南京大学 一种多功能氢化物气相外延生长系统及应用
JP6839694B2 (ja) * 2018-12-17 2021-03-10 株式会社デンソー 酸化ガリウム膜の成膜方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180270B1 (en) * 1998-04-24 2001-01-30 The United States Of America As Represented By The Secretary Of The Army Low defect density gallium nitride epilayer and method of preparing the same
JP2001192300A (ja) * 2000-01-04 2001-07-17 Sharp Corp 窒化物系化合物半導体基板およびその製造方法
CN1447448A (zh) * 2002-03-26 2003-10-08 日本电气株式会社 基于ⅲ族氮化物的半导体基片及其制造方法
JP2008060519A (ja) * 2005-12-28 2008-03-13 Ngk Insulators Ltd ＡｌＮ系ＩＩＩ族窒化物エピタキシャル膜の転位低減方法
WO2009047894A1 (ja) * 2007-10-09 2009-04-16 Panasonic Corporation Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003327497A (ja) 2002-05-13 2003-11-19 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法
JP4816277B2 (ja) * 2006-06-14 2011-11-16 日立電線株式会社 窒化物半導体自立基板及び窒化物半導体発光素子
JP4810517B2 (ja) * 2007-09-10 2011-11-09 日本電気株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板
JP5108641B2 (ja) * 2008-06-12 2012-12-26 住友電気工業株式会社 ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、及び、窒化物系半導体素子
JP2011006304A (ja) * 2009-06-29 2011-01-13 Hitachi Cable Ltd 窒化物半導体基板およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180270B1 (en) * 1998-04-24 2001-01-30 The United States Of America As Represented By The Secretary Of The Army Low defect density gallium nitride epilayer and method of preparing the same
JP2001192300A (ja) * 2000-01-04 2001-07-17 Sharp Corp 窒化物系化合物半導体基板およびその製造方法
CN1447448A (zh) * 2002-03-26 2003-10-08 日本电气株式会社 基于ⅲ族氮化物的半导体基片及其制造方法
JP2008060519A (ja) * 2005-12-28 2008-03-13 Ngk Insulators Ltd ＡｌＮ系ＩＩＩ族窒化物エピタキシャル膜の転位低減方法
WO2009047894A1 (ja) * 2007-10-09 2009-04-16 Panasonic Corporation Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
R. DATTA，等: "Growth and characterisation of GaN with reduced dislocation density", 《SUPERLATTICES AND MICROSTRUCTURES》 *
R. J. KAMALADASA，等: "Basic Principles and Application of Electron Channeling in a Scanning Electron Microscope for Dislocation Analysis", 《MICROSCOPY: SCIENCE, TECHNOLOGY, APPLICATIONS AND EDUCATION》 *

Also Published As

Publication number Publication date
WO2012141317A1 (ja) 2012-10-18
US20140035103A1 (en) 2014-02-06
EP2698456B1 (en) 2018-07-25
US9502241B2 (en) 2016-11-22
KR20140017598A (ko) 2014-02-11
EP2698456A4 (en) 2014-11-05
EP2698456A1 (en) 2014-02-19
KR101882541B1 (ko) 2018-07-26
JP2012231103A (ja) 2012-11-22

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Application publication date: 20140108