CN103500759B - 具有不同宽度硅柱的高压垂直晶体管 - Google Patents

具有不同宽度硅柱的高压垂直晶体管 Download PDF

Info

Publication number
CN103500759B
CN103500759B CN201310367057.0A CN201310367057A CN103500759B CN 103500759 B CN103500759 B CN 103500759B CN 201310367057 A CN201310367057 A CN 201310367057A CN 103500759 B CN103500759 B CN 103500759B
Authority
CN
China
Prior art keywords
post
width
field effect
region
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310367057.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN103500759A (zh
Inventor
苏吉特·巴纳吉
维杰伊·帕塔萨拉蒂
朱林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Inc
Original Assignee
Power Integrations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Publication of CN103500759A publication Critical patent/CN103500759A/zh
Application granted granted Critical
Publication of CN103500759B publication Critical patent/CN103500759B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
CN201310367057.0A 2008-09-18 2009-09-17 具有不同宽度硅柱的高压垂直晶体管 Expired - Fee Related CN103500759B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/284,086 2008-09-18
US12/284,086 US7964912B2 (en) 2008-09-18 2008-09-18 High-voltage vertical transistor with a varied width silicon pillar
CN2009102116463A CN101710591B (zh) 2008-09-18 2009-09-17 具有不同宽度硅柱的高压垂直晶体管

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2009102116463A Division CN101710591B (zh) 2008-09-18 2009-09-17 具有不同宽度硅柱的高压垂直晶体管

Publications (2)

Publication Number Publication Date
CN103500759A CN103500759A (zh) 2014-01-08
CN103500759B true CN103500759B (zh) 2016-05-18

Family

ID=41376332

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201310367057.0A Expired - Fee Related CN103500759B (zh) 2008-09-18 2009-09-17 具有不同宽度硅柱的高压垂直晶体管
CN2009102116463A Expired - Fee Related CN101710591B (zh) 2008-09-18 2009-09-17 具有不同宽度硅柱的高压垂直晶体管

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2009102116463A Expired - Fee Related CN101710591B (zh) 2008-09-18 2009-09-17 具有不同宽度硅柱的高压垂直晶体管

Country Status (4)

Country Link
US (3) US7964912B2 (enExample)
EP (2) EP2533290B1 (enExample)
JP (1) JP5692889B2 (enExample)
CN (2) CN103500759B (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786533B2 (en) * 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US9368614B2 (en) * 2008-08-20 2016-06-14 Alpha And Omega Semiconductor Incorporated Flexibly scalable charge balanced vertical semiconductor power devices with a super-junction structure
US8093621B2 (en) 2008-12-23 2012-01-10 Power Integrations, Inc. VTS insulated gate bipolar transistor
US7557406B2 (en) * 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US7859037B2 (en) 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US7595523B2 (en) * 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US8653583B2 (en) 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7964912B2 (en) * 2008-09-18 2011-06-21 Power Integrations, Inc. High-voltage vertical transistor with a varied width silicon pillar
US7871882B2 (en) 2008-12-20 2011-01-18 Power Integrations, Inc. Method of fabricating a deep trench insulated gate bipolar transistor
US20100155831A1 (en) * 2008-12-20 2010-06-24 Power Integrations, Inc. Deep trench insulated gate bipolar transistor
US8115457B2 (en) 2009-07-31 2012-02-14 Power Integrations, Inc. Method and apparatus for implementing a power converter input terminal voltage discharge circuit
US8207577B2 (en) * 2009-09-29 2012-06-26 Power Integrations, Inc. High-voltage transistor structure with reduced gate capacitance
JP5586546B2 (ja) * 2011-03-23 2014-09-10 株式会社東芝 半導体装置
JP6185062B2 (ja) * 2012-07-25 2017-08-23 パワー・インテグレーションズ・インコーポレーテッド テーパ付けされた酸化物の堆積／エッチング
CN104241341A (zh) * 2012-07-27 2014-12-24 俞国庆 一种高频低功耗的功率mos场效应管器件
JP5802636B2 (ja) * 2012-09-18 2015-10-28 株式会社東芝 半導体装置およびその製造方法
US9245994B2 (en) * 2013-02-07 2016-01-26 Texas Instruments Incorporated MOSFET with curved trench feature coupling termination trench to active trench
KR20150030799A (ko) * 2013-09-12 2015-03-23 매그나칩 반도체 유한회사 반도체 소자 및 그 제조 방법
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US9252148B2 (en) 2014-01-22 2016-02-02 Micron Technology, Inc. Methods and apparatuses with vertical strings of memory cells and support circuitry
CN103928527B (zh) * 2014-04-28 2016-06-08 电子科技大学 一种横向高压功率半导体器件的结终端结构
US9722036B2 (en) * 2014-09-17 2017-08-01 Infineon Technologies Austria Ag Semiconductor device with field electrode structure
CN104638013B (zh) * 2015-01-30 2017-10-24 上海华虹宏力半导体制造有限公司 隔离型nldmos器件
KR101962834B1 (ko) * 2015-04-30 2019-03-27 수 조우 오리엔탈 세미컨덕터 콤퍼니 리미티드 반도체 초접합 전력 소자 및 그 제조방법
DE102015110737B4 (de) * 2015-07-03 2022-09-29 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer direkt an einen Mesaabschnitt und eine Feldelektrode angrenzenden Kontaktstruktur
CN107235062B (zh) 2016-03-29 2019-07-09 明门香港股份有限公司 婴儿车架
US9929152B2 (en) 2016-06-30 2018-03-27 Globalfoundries Inc. Vertical transistors and methods of forming same
US9972681B2 (en) * 2016-08-30 2018-05-15 Power Integrations, Inc. High voltage vertical semiconductor device with multiple pillars in a racetrack arrangement
JP7057044B2 (ja) * 2018-02-22 2022-04-19 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
CN110620147B (zh) * 2018-09-14 2023-05-23 电子科技大学 超高速大电流纵向绝缘栅双极型晶体管
US10833174B2 (en) 2018-10-26 2020-11-10 Nxp Usa, Inc. Transistor devices with extended drain regions located in trench sidewalls
US10749023B2 (en) 2018-10-30 2020-08-18 Nxp Usa, Inc. Vertical transistor with extended drain region
US10749028B2 (en) 2018-11-30 2020-08-18 Nxp Usa, Inc. Transistor with gate/field plate structure
US11387348B2 (en) 2019-11-22 2022-07-12 Nxp Usa, Inc. Transistor formed with spacer
US11329156B2 (en) 2019-12-16 2022-05-10 Nxp Usa, Inc. Transistor with extended drain region
US11728421B2 (en) * 2020-02-27 2023-08-15 Semiconductor Components Industries, Llc Split trench gate super junction power device
JP7256770B2 (ja) * 2020-03-16 2023-04-12 株式会社東芝 半導体装置
US11075110B1 (en) 2020-03-31 2021-07-27 Nxp Usa, Inc. Transistor trench with field plate structure
US11217675B2 (en) 2020-03-31 2022-01-04 Nxp Usa, Inc. Trench with different transverse cross-sectional widths
US12464761B2 (en) * 2022-11-30 2025-11-04 Texas Instruments Incorporated LOCOS fillet for drain reduced breakdown in high voltage transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101246907A (zh) * 2007-02-16 2008-08-20 电力集成公司 用于具有棋盘式布局的晶体管的栅极金属布线

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008794A (en) 1989-12-21 1991-04-16 Power Integrations, Inc. Regulated flyback converter with spike suppressing coupled inductors
US5072268A (en) 1991-03-12 1991-12-10 Power Integrations, Inc. MOS gated bipolar transistor
US5164891A (en) 1991-08-21 1992-11-17 Power Integrations, Inc. Low noise voltage regulator and method using a gated single ended oscillator
US5258636A (en) 1991-12-12 1993-11-02 Power Integrations, Inc. Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
US5285367A (en) 1992-02-07 1994-02-08 Power Integrations, Inc. Linear load circuit to control switching power supplies under minimum load conditions
US5323044A (en) 1992-10-02 1994-06-21 Power Integrations, Inc. Bi-directional MOSFET switch
US5274259A (en) 1993-02-01 1993-12-28 Power Integrations, Inc. High voltage transistor
US5313082A (en) 1993-02-16 1994-05-17 Power Integrations, Inc. High voltage MOS transistor with a low on-resistance
US6207994B1 (en) 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6168983B1 (en) 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
US6800903B2 (en) 1996-11-05 2004-10-05 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6084277A (en) 1999-02-18 2000-07-04 Power Integrations, Inc. Lateral power MOSFET with improved gate design
US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6468847B1 (en) 2000-11-27 2002-10-22 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6424007B1 (en) 2001-01-24 2002-07-23 Power Integrations, Inc. High-voltage transistor with buried conduction layer
JP2002305304A (ja) 2001-04-05 2002-10-18 Toshiba Corp 電力用半導体装置
US6573558B2 (en) 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US7786533B2 (en) * 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US7221011B2 (en) 2001-09-07 2007-05-22 Power Integrations, Inc. High-voltage vertical transistor with a multi-gradient drain doping profile
US6555873B2 (en) 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US6555883B1 (en) 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US6552597B1 (en) 2001-11-02 2003-04-22 Power Integrations, Inc. Integrated circuit with closely coupled high voltage output and offline transistor pair
US6777747B2 (en) 2002-01-18 2004-08-17 Fairchild Semiconductor Corporation Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability
US6583663B1 (en) 2002-04-22 2003-06-24 Power Integrations, Inc. Power integrated circuit with distributed gate driver
US6865093B2 (en) 2003-05-27 2005-03-08 Power Integrations, Inc. Electronic circuit control element with tap element
EP1536480A1 (en) 2003-11-28 2005-06-01 STMicroelectronics S.r.l. Semiconductor power device with insulated gate, trenchgate structure and corresponding manufacturing method
US7183610B2 (en) * 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
JP2005340626A (ja) 2004-05-28 2005-12-08 Toshiba Corp 半導体装置
US20060086974A1 (en) 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
US7135748B2 (en) 2004-10-26 2006-11-14 Power Integrations, Inc. Integrated circuit with multi-length output transistor segment
US7436039B2 (en) 2005-01-06 2008-10-14 Velox Semiconductor Corporation Gallium nitride semiconductor device
KR20070015309A (ko) * 2005-07-30 2007-02-02 페어차일드코리아반도체 주식회사 고전압 반도체소자
JP4817827B2 (ja) 2005-12-09 2011-11-16 株式会社東芝 半導体装置
DE102006004405B4 (de) 2006-01-31 2015-05-13 Infineon Technologies Austria Ag Leistungshalbleiterbauelemente mit einer Driftstrecke und einer hochdielektrischen Kompensationszone und Verfahren zur Herstellung einer Kompensationszone
JP4453671B2 (ja) * 2006-03-08 2010-04-21 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
JP5052025B2 (ja) * 2006-03-29 2012-10-17 株式会社東芝 電力用半導体素子
US7381618B2 (en) 2006-10-03 2008-06-03 Power Integrations, Inc. Gate etch process for a high-voltage FET
US7859037B2 (en) 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US8653583B2 (en) 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7557406B2 (en) * 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US7595523B2 (en) * 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US7875962B2 (en) 2007-10-15 2011-01-25 Power Integrations, Inc. Package for a power semiconductor device
US7964912B2 (en) * 2008-09-18 2011-06-21 Power Integrations, Inc. High-voltage vertical transistor with a varied width silicon pillar
US7871882B2 (en) 2008-12-20 2011-01-18 Power Integrations, Inc. Method of fabricating a deep trench insulated gate bipolar transistor
US7893754B1 (en) 2009-10-02 2011-02-22 Power Integrations, Inc. Temperature independent reference circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101246907A (zh) * 2007-02-16 2008-08-20 电力集成公司 用于具有棋盘式布局的晶体管的栅极金属布线

Also Published As

Publication number Publication date
US7964912B2 (en) 2011-06-21
US8395207B2 (en) 2013-03-12
US20100065903A1 (en) 2010-03-18
JP5692889B2 (ja) 2015-04-01
US20130187219A1 (en) 2013-07-25
EP2166573A2 (en) 2010-03-24
EP2166573A3 (en) 2010-09-22
EP2533290A2 (en) 2012-12-12
US8742495B2 (en) 2014-06-03
EP2533290B1 (en) 2014-05-14
CN101710591B (zh) 2013-09-18
EP2166573B1 (en) 2013-04-10
CN103500759A (zh) 2014-01-08
EP2533290A3 (en) 2013-02-20
US20110233657A1 (en) 2011-09-29
CN101710591A (zh) 2010-05-19
JP2010080963A (ja) 2010-04-08

Similar Documents

Publication Publication Date Title
CN103500759B (zh) 具有不同宽度硅柱的高压垂直晶体管
US8390058B2 (en) Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions
CN102222696B (zh) 高电压垂直晶体管的分段式柱布局
JP5020389B2 (ja) エッジ終端構造を持つ高電圧縦型トランジスタ
CN101478000B (zh) 用于功率半导体器件的改进的锯齿电场漂移区域结构
CN102376768B (zh) 与高压垂直晶体管集成的感测fet
TWI469347B (zh) 帶有溝槽-氧化物-奈米管超級接面之元件結構及製備方法
CN101789396A (zh) 制造深沟槽绝缘栅极双极晶体管的方法
JP2007059766A (ja) トレンチ構造半導体装置及びその製造方法
CN104518007B (zh) 半导体装置
US20110169080A1 (en) Charge balance power device and manufacturing method thereof
JP5528076B2 (ja) 半導体装置
CN113410298B (zh) 一种具有表面耐压结构的n沟道LDMOS器件及其制备方法
CN210325806U (zh) 一种具有jfet区布图设计的半导体器件
CN116344583A (zh) 一种SiC超结器件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160518

Termination date: 20210917

CF01 Termination of patent right due to non-payment of annual fee