CN103474322A - Dry etching equipment and etching method - Google Patents
Dry etching equipment and etching method Download PDFInfo
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- CN103474322A CN103474322A CN2013104505195A CN201310450519A CN103474322A CN 103474322 A CN103474322 A CN 103474322A CN 2013104505195 A CN2013104505195 A CN 2013104505195A CN 201310450519 A CN201310450519 A CN 201310450519A CN 103474322 A CN103474322 A CN 103474322A
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Abstract
The invention discloses dry etching equipment and an etching method, and relates to the technical field of etching equipment. The dry etching equipment comprises a tray used for containing at least one etched part, an etching unit used for etching the at least one etched part, a shell containing the tray, and a vacuum generator connected with the shell, wherein the tray is provided with at least one group of limiting pins used for limiting the position of the at least one etched part. Because the tray in the dry etching equipment limits the etched part through the limiting pins, the service life of the tray is prolonged; in addition, the defect that remachining is needed if a groove of the tray is deepened in a traditional method is eliminated, and engineering cost is reduced.
Description
Technical field
The present invention relates to the etching apparatus technical field, more particularly, relate to a kind of dry etching equipment and lithographic method.
Background technology
In the fields such as optical communication, microelectronics, semiconductor lighting, MEMS (micro electro mechanical system), photovoltaic industry, dry etching is an important processing step.Take optical communication as example, and China's broadband access in recent years and fiber-to-the-home development are surged the demand of planar optical waveguide chip product.Planar optical waveguide is that fiber waveguide is fabricated into to the technology on planar substrates, is to realize the large capacity of optical communication and the integrated effective means of optical device.Slab guide can be made array waveguide grating, optical branching device, the optical devices such as multichannel adjustable optical attenuator, optical switch.In the middle of optical communication network, the array waveguide grating that light signal dependence planar optical waveguide is made is widely used for realizing that wavelength division multiplexing is to improve efficiency of transmission.At the least significant end of optical communication, Fiber to the home the stage, and planar optical waveguide light splitter provides the most effective EPON Broadband Access Scheme at present.Dry etching is used aneroid method to etch the microcosmos pattern meeted the requirements on wafer, is one of important step of production planar optical waveguide chip product.
Graphite is owing to having good thermal stability, conductivity, thermal conductivity, resistance to sudden heating, chemical resistance, low wettability and good mechanical strength etc., in etching process, mostly adopt the graphite pallet to carry out support to wafer at present, and groove is set with placing wafer according to the different size of wafer in the graphite pallet.
In etching apparatus, due to corrasion, the groove of graphite pallet can shoal in etching process, and after a period of time, the excessively shallow placing wafer that is not enough to of groove can make wafer skid off outside groove, thereby causes product rejection.Prior art, by pallet is processed again, to deepen the degree of depth of groove, continues to use this pallet; When the graphite pallet is reprocessed, must meet the requirements such as surface smoothness, surface smoothness and face coat of graphite pallet groove.This pallet cost is very high, and not only procedure of processing is more loaded down with trivial details, processing charges is high to reuse this pallet with the method for deepening groove, also can reduce pallet service time, further increases cost.
On the other hand, except dry etching, also has long membrane process in chip production, i.e. the specific film substrate of deposition on wafer.Long film device also will be used graphite support and fold the support effect.And, in existing groove design, the rete that is grown in the groove edge is easy to clean not, in the time of cleaning, also can cause wearing and tearing to the edge of pallet.
Summary of the invention
The technical problem to be solved in the present invention is, a kind of dry etching equipment and the lithographic method that can eliminate the defect that in conventional method, the intensification of pallet groove need be reprocessed is provided.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of dry etching equipment, comprise pallet for placing at least one part that is etched, for the etching unit that described at least one part that is etched carried out to etching, accommodate the housing of described pallet and the vacuum generator be connected with described housing, be equipped with at least one group on described pallet for limiting the spacer pin of described at least one part position that is etched.
Preferably, in above-mentioned dry etching equipment, described at least one group of spacer pin is removably installed on described tray surface.
Preferably, in above-mentioned dry etching equipment, be provided with a plurality of spacing holes of planting for described at least one group of spacer pin for respectively on described tray surface.
Preferably, in above-mentioned dry etching equipment, described at least one group of spacer pin is vertically installed in described tray surface.
Preferably, in above-mentioned dry etching equipment, described at least one group of spacer pin comprises many group spacer pins, and each group spacer pin comprises at least three spaced apart spacer pins.
Preferably, in above-mentioned dry etching equipment, the part adjacent sets spacer pin in these many group spacer pins shares one or more spacer pin.
Preferably, in above-mentioned dry etching equipment, described pallet is the graphite pallet.
Preferably, in above-mentioned dry etching equipment, described dry etching equipment is the wafer dry etching equipment, and the described part that is etched is wafer.
A kind of dry etching method comprises the following steps:
A, provide a pallet;
B, at described tray surface, install in order to limit at least one group of spacer pin of at least one part that is etched;
C, described at least one part that is etched is positioned over to described tray surface, and, between at least one group of spacer pin, is limited on described tray surface by described at least one group of spacer pin;
D, described pallet is positioned in the housing that is connected with vacuum generator, opens described vacuum generator, by the etching unit, from top to bottom described at least one part that is etched is carried out to dry etching.
Preferably, in above-mentioned dry etching method, described pallet is the graphite pallet, and described at least one part that is etched is wafer.
The invention has the beneficial effects as follows: because the pallet in dry etching equipment of the present invention carries out spacingly to the part that is etched by spacer pin, extended useful life of pallet; And eliminated pallet groove in the conventional method and deepened to need the defect of reprocessing, reduced engineering cost.
The accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the dry etching equipment structural representation of one embodiment of the invention;
Fig. 2 is the blast structural representation of spacer pin and pallet in the dry etching equipment of one embodiment of the invention;
Fig. 3 is the structural representation of pallet in the dry etching equipment of one embodiment of the invention;
Fig. 4 is the structural representation of pallet in the dry etching equipment of another embodiment of the present invention.
Embodiment
Understand for technical characterictic of the present invention, purpose and effect being had more clearly, now contrast accompanying drawing and describe the specific embodiment of the present invention in detail.
Fig. 1 shows the dry etching equipment in a preferred embodiment of the invention, can be applicable to the etching process of optical communication technique midplane chip of light waveguide.This dry etching equipment comprises pallet 1 for placing at least one part 3 that is etched, for part 3 that at least one is etched, carries out the etching unit of etching, the housing of housing tray 1 and the vacuum generator be connected with housing, and at least one group of spacer pin 2 that limits at least one part 3 position that are etched is installed on pallet 1.In dry etching equipment, when the part 3 that is etched is carried out to etching, by 2 pairs of the spacer pins part 3 that is etched, undertaken spacingly, do not need machined grooves with the placement part 3 that is etched, thereby extend the useful life of pallet 1; And eliminated the defect that pallet groove in the conventional method deepens to need reprocessing, when extending useful life of pallet 1, can reduce processing cost.
Understandably, the pallet in this dry etching equipment also can be applicable in the chip product manufacturing process in the fields such as optical communication, microelectronics, semiconductor lighting, MEMS (micro electro mechanical system), photovoltaic.
As shown in Figure 1 and Figure 2, this at least one group of spacer pin 2 is removably installed on pallet 1 surface.In etching apparatus, when spacer pin 2, under corrasion, can't limit while being etched part 3, only need to change spacer pin 2 and can again limit the part 3 that is etched.In further embodiments, the dismountable spacer pin 2 in long film device can be cleared up the rete on pallet 1 easily.
In certain embodiments, as shown in Figure 1, this at least one group of spacer pin 2 is vertically installed in pallet 1 surface.Vertically disposed spacer pin 2 can be put the part 3 that is etched to pallet 1 surface easily.
In certain embodiments, as shown in Figure 3, this at least one group of spacer pin 2 comprises many group spacer pins 2, and each group spacer pin 2 comprises at least three spaced apart spacer pins 2.
In certain embodiments, as shown in Figure 4, the part adjacent sets spacer pin 2 in these many group spacer pins 2 shares one or more spacer pin 2.The spacer pin 2 of adjacent sets shares one or more spacer pin 2 and not only can save the usage quantity of spacer pin 2, can also increase the quantity of placing the part 3 that is etched on pallet 1, reduces costs.
In certain embodiments, spacer pin 2 is graphite spacer pin, metal spacing pin or carborundum spacer pin.Because spacer pin 2 compartment of terrains are arranged in around the part 3 of being etched with the restriction part 3 that is etched, do not cover the periphery of the part 3 that is etched fully, so can not affect the thermal stability, electric conductivity etc. of pallet 1 when alignment pin 2 adopts graphite, metal or carbofrax material.
In certain embodiments, these spacer pin 2 cross sections can be rounded, triangle or quadrangle etc.Understandably, the shape of cross section of spacer pin 2 does not limit, and can make according to actual needs and be arbitrary shape.
In certain embodiments, as shown in Figure 2, pallet 1 surface is formed with a plurality of spacing holes 11 of planting at least one group of spacer pin 2 for respectively.The geomery of the geomery of these spacing holes 11 and these spacer pins 2 is suitable.
In certain embodiments, pallet 1 is the graphite pallet.
In certain embodiments, this dry etching equipment is the wafer dry etching equipment, and the part 3 that is etched is for wafer.Preferably, this wafer is optical communication planar optical waveguide wafer.
In dry etching equipment, before wafer is carried out to etching, pallet 1 is processed to form to a plurality of spacing holes 11, now the height of pallet can not change.Then wafer is positioned over to tray surface, between spacer pin, by spacer pin 2, wafer is limited on pallet, from top to bottom wafer is carried out to dry etching.During etching, the pallet 1 do not covered by wafer and spacer pin 2 also can be subject to the effect of etching simultaneously and shoal; After a period of time, when the height of spacer pin 2 can't limit the position of wafer, spacer pin 2 is dismantled from pallet, and changed new spacer pin 2, can again carry out etching work.Until the pallet 1 do not covered by wafer has been consumed, can greatly extend 1 useful life of pallet.And do not need the pallet 1 of placing wafer is processed again when changing spacer pin 2, can reduce processing work, reduce processing cost.
In long film device, because spacer pin 2 is removable installed on pallet 1, when needs are cleared up pallet 1, spacer pin 2 is pulled down, can to the rete on spacer pin 2 and this pallet 1, be cleared up respectively, reduce to clear up difficulty.In long film device, the design of this pallet can make pallet clear up easier, longer service life.
A kind of dry etching method comprises the following steps:
A, provide a pallet 1;
B, on described pallet 1 surface, install in order to limit at least one group of spacer pin 2 of at least one part 3 that is etched;
C, described at least one part 3 that is etched is positioned over to described pallet 1 surface, and, between at least one group of spacer pin 2, is limited on described pallet 1 surface by described at least one group of spacer pin 2;
D, described pallet 1 is positioned in the housing that is connected with vacuum generator, opens described vacuum generator, by the etching unit, from top to bottom described at least one part 3 that is etched is carried out to dry etching.
When spacer pin 2 consumes the height step-down under corrasion, change spacer pin 2 again to limit the position of the part 3 that is etched.
Understandably, the etching unit comprises radio-frequency power supply equipment and the gas control equipment that passes into the etching gas medium in housing.
The foregoing is only the preferred embodiments of the present invention, not in order to limit the present invention, all any modifications of doing in the spirit and principles in the present invention, be equal to and replace or improvement etc., all should be included in protection scope of the present invention.
Claims (10)
1. a dry etching equipment, comprise pallet (1) for placing at least one part that is etched (3), for the etching unit that described at least one part that is etched (3) carried out to etching, accommodate the housing of described pallet (1) and the vacuum generator be connected with described housing, it is characterized in that, be equipped with at least one group on described pallet (1) for limiting the spacer pin (2) of described at least one part that is etched (3).
2. dry etching equipment according to claim 1, is characterized in that, described at least one group of spacer pin (2) is removably installed on described pallet (1) surface.
3. dry etching equipment according to claim 2, is characterized in that, described pallet (1) surface is provided with a plurality of spacing holes (11) for supplying respectively described at least one group of spacer pin (2) to plant.
4. dry etching equipment according to claim 1, is characterized in that, described at least one group of spacer pin (2) is vertically installed in described pallet (1) surface.
5. dry etching equipment according to claim 1, is characterized in that, described at least one group of spacer pin (2) comprises many group spacer pins (2), and each group spacer pin (2) comprises at least three spaced apart spacer pins (2).
6. dry etching equipment according to claim 5, is characterized in that, the part adjacent sets spacer pin (2) in these many group spacer pins (2) shares one or more spacer pin (2).
7. dry etching equipment according to claim 1, is characterized in that, described pallet (1) is the graphite pallet.
8. according to the described dry etching equipment of any one in claim 1 to 7, it is characterized in that, described dry etching equipment is the wafer dry etching equipment, and the described part that is etched (3) is wafer.
9. a dry etching method, is characterized in that, comprises the following steps:
A, provide a pallet (1);
B, on described pallet (1) surface, install in order to limit at least one group of spacer pin (2) of at least one part that is etched (3);
C, described at least one part that is etched (3) is positioned over to described pallet (1) surface, and is positioned between at least one group of spacer pin (2), be limited on described pallet (1) surface by described at least one group of spacer pin (2);
D, described pallet (1) is positioned in the housing that is connected with vacuum generator, opens described vacuum generator, by the etching unit, from top to bottom described at least one part that is etched (3) is carried out to dry etching.
10. dry etching equipment according to claim 9, is characterized in that, described pallet (1) is the graphite pallet, and described at least one part that is etched (3) is wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310450519.5A CN103474322B (en) | 2013-09-27 | 2013-09-27 | Dry etching equipment and lithographic method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310450519.5A CN103474322B (en) | 2013-09-27 | 2013-09-27 | Dry etching equipment and lithographic method |
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| CN103474322A true CN103474322A (en) | 2013-12-25 |
| CN103474322B CN103474322B (en) | 2016-08-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113471134A (en) * | 2021-06-28 | 2021-10-01 | 北京北方华创微电子装备有限公司 | Tray structure of semiconductor equipment and semiconductor equipment |
| CN113851402A (en) * | 2021-05-31 | 2021-12-28 | 华灿光电(苏州）有限公司 | Tray for plasma etcher and plasma etcher |
| CN113471134B (en) * | 2021-06-28 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Tray structure of semiconductor device and semiconductor device |
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| JP2000260851A (en) * | 1999-02-12 | 2000-09-22 | Applied Materials Inc | Wafer-support device in semiconductor manufacturing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113471134B (en) * | 2021-06-28 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Tray structure of semiconductor device and semiconductor device |
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| CN103474322B (en) | 2016-08-17 |
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Effective date of registration: 20151231 Address after: 528251 Guangdong Province, Foshan City Nanhai Pingzhou community building A block 4 photoelectric Valley Applicant after: Sunblence Technologies Co., Ltd. Applicant after: Shenzhen Sunsea Telecommunications Co., Ltd. Address before: 528251 Guangdong Province, Foshan City Nanhai Pingzhou community building A block 4 photoelectric Valley Applicant before: Sunblence Technologies Co., Ltd. |
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