CN103809241B - A kind of method making optical fiber align pedestal array in silica-based technique - Google Patents
A kind of method making optical fiber align pedestal array in silica-based technique Download PDFInfo
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- CN103809241B CN103809241B CN201210454065.4A CN201210454065A CN103809241B CN 103809241 B CN103809241 B CN 103809241B CN 201210454065 A CN201210454065 A CN 201210454065A CN 103809241 B CN103809241 B CN 103809241B
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Abstract
The invention discloses a kind of method making optical fiber align pedestal array in silica-based technique, comprise the steps: that 1 draws via-hole array needed for optical fiber align pedestal and size in reticle; 2 at one layer of silicon oxide film of Silicon Wafer front growth; 3 coat photoresist in Silicon Wafer front, and with the reticle exposure imaging array hole figure of optical fiber align pedestal; 4 etching oxidation silicon thin films are as hard mask layer; 5 etching silicon deep holes, etching stopping is in Silicon Wafer; 6 photoresist removing etching residue and etching reaction polymer; The silicon oxide film of 7 etching Silicon Wafer front and back residuals; 8 stick blue film in Silicon Wafer front, protect front description; The silicon of 9 grinding back surface silicon deep hole etching residues, until silicon through hole is formed; 10 remove blue film removes. The present invention combines with grinding back surface by etching silicon through hole, has both reduced silicon via etch difficulty, the extra charge simultaneously avoiding etching silicon through hole to bring, and decreases process costs, improves process efficiency.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing process, relate to a kind of method making optical fiber align pedestal array in silica-based technique.
Background technology
Currently, the application of optical communication device is more and more extensive, and fiber to the home engineering also begins to progressively carry out in developed area. A photosystem needs multiple optical-fibre channel for the process of optical signal, and the quality of the elongated optical fiber fixing optical fiber of guarantee that needs to be fixed on large number of optical fiber align pedestal meets system requirements. Therefore alignment precision height and process stabilizing are the primary demands that optical signal power loss is little.
Current industry is most commonly used that the method adopting lf glass to make optical fiber through hole pedestal, lf method has processing technology coarse, alignment precision is low, shortcoming under being costly and inefficient, and the bad problem causing optical signal power loss serious of optical fiber align, therefore in the urgent need to one high accuracy, the processing technology of low cost and high yield replaces it.
Current existing way is the Silicon Wafer of 725 microns to be cut through in semiconductor processing, an optical fiber align pedestal is made, it is necessary to the aperture inner evenness of array hole is good, and process repeatability is strong after being bonded together by three chips, flow process is simple, the advantage that cost is low. But in order to the wafer of 725 microns is cut through, it is desirable to have a step even back side film forming of two to three steps and through more dry and wet etching, relatively costly and complex process. For this, in the urgent need to one high accuracy, the processing technology of low cost and high yield replaces it.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method making optical fiber align pedestal array in silica-based technique, after the deep silicon hole of the method employing dry etching 500-650 micron, recycling grinding back surface goes out the process of through hole, both expense and the time of the many one-step film formings of traditional handicraft can have been reduced, simplifying the Complicated Flow of traditional handicraft multilayer film dry and wet etching, technique can degree of realization height simultaneously.
For solving above-mentioned technical problem, the present invention provides a kind of method making optical fiber align pedestal array in silica-based technique, comprises the steps:
1.1 draw the via-hole array required for optical fiber align pedestal and size in reticle;
1.2 at one layer of silicon oxide film of the front of Silicon Wafer growth;
1.3 coat photoresist in the Silicon Wafer front having grown silicon oxide film, and go out array hole pattern with the reticle exposure imaging of optical fiber align pedestal;
1.4 in dry etching board etching oxidation silicon thin film as hard mask layer;
1.5 etch silicon deep hole in silicon dry etching board, and etching stopping is in Silicon Wafer;
1.6 photoresist removing etching residue in the board that removes photoresist and etching reaction polymer;
1.7 silicon oxide films etching Silicon Wafer front and back residual in wet method acid tank;
1.8 stick blue film in Silicon Wafer front, protect front description;
1.9 silicon grinding silicon deep hole etching residue overleaf on grinder station, until silicon through hole is formed;
The blue film in Silicon Wafer front is removed by 1.10, and technique completes.
Further, in described step 1.1, reticle draws array of circular apertures according to the arrangement of fiber array and size, and distinguishes the index aperture of optical fiber align pedestal positive and negative.
Further, in described step 1.2, use the silicon oxide film that plasma enhanced chemical vapor deposition method grows a layer 3 microns-6 microns in the front of Silicon Wafer.
Further, in described step 1.3, the thickness of described photoresist is 0.1 micron-5 microns; Described photoresist is positive photoresist or negative photoresist.
Further, in described step 1.4, using in dry etching board and comprise tetrafluoromethane, the silicon oxide film of 3 microns-6 microns of the main etching gas etching Silicon Wafer front of fluoroform, the photoresist of this silicon oxide film and residual is as the mask layer of follow-up silicon via etch.
Further, in described step 1.5, in silicon dry etching board, utilize the photoresist of step 1.4 gained and silicon oxide film as etching mask layer, the deep silicon hole of partial etching 500 microns-650 microns, main etching gas is sulfur hexafluoride, and etching stopping is in Silicon Wafer, the inner evenness of etching depth is 10%, and the silicon thickness of etching residue is 75 microns-225 microns.
Further, in described step 1.6, the board that removes photoresist is removed the residual photoresist after step 1.4,1.5 liang of steps and etching reaction by-product; Described etching reaction by-product results from step 4 and step 5 dry etching process, and described etching reaction by-product sticks to through-hole wall and silicon wafer surface, can cause follow-up optical fiber perforation difficulty.
Further, in described step 1.6, described in the board that removes photoresist be that dry ashing removes photoresist board, described etching reaction by-product is Organic substance, uses O in this dry ashing removes photoresist board2This etching reaction by-product is removed in reaction.
Further, in described step 1.7, at the silicon oxide film that Silicon Wafer front and back is remaining after wet method acid tank uses the admixing medical solutions etch step 1.6 of Fluohydric acid. and ammonium fluoride; The mixed proportion of described Fluohydric acid. and ammonium fluoride ranges for 1:200 to 1:2; The etch rate of described silicon oxide film is
Further, in described step 1.9, the silicon of 75 micron of-225 micron thickness of residual described in grinding steps 1.5 on grinder station overleaf, grinding limit, limit is cleaned, until by worn out for silicon through hole, the uniformity of grinding back surface is in face within 3 microns, and grinding precision is 0.01-1 micron, and the roughness of wafer rear is within 0.1 micron.
Further, obtaining uniform pore diameter good after step 1.10 completes, degree of accuracy is high, the 126-150 micron pore size of inner wall smooth, the optical fiber align pedestal array of 500-650 micron.
Compare with existing method, the beneficial effects of the present invention is: the present invention produces precision height in silicon-based semiconductor manufacturing process, volume is little, and yield is high, the optical fiber align pedestal array that process monitoring is stable, existing way is the Silicon Wafer of 725 microns to be cut through, an optical fiber align pedestal is made, it is necessary to the aperture inner evenness of array hole is good, and process repeatability is strong after being bonded together by three chips, flow process is simple, the advantage that cost is low. But in order to the wafer of 725 microns is cut through, it is desirable to have a step even back side film forming of two to three steps and through more dry and wet etching, relatively costly and complex process. For this, after adopting the deep silicon hole of dry etching 500-650 micron in the present invention, recycling grinding back surface goes out the process of through hole, both expense and the time of the many one-step film formings of traditional handicraft can have been reduced, simplifying the Complicated Flow of traditional handicraft multilayer film dry and wet etching, technique can degree of realization height simultaneously. In the present invention, utilize silicon-based semiconductor fabrication process precision high, volume is little, yield is high, and the ripe strict advantage of process monitoring, by etching the process that deep silicon through hole combines with grinding back surface, both the technology difficulty of silicon via etch can have been reduced, the extra charge needing back side film forming to bring due to etching silicon through hole can be avoided simultaneously, decrease process costs, improve process efficiency.
Accompanying drawing explanation
Fig. 1 is the generalized section after the step 2 Silicon Wafer front growing silicon oxide thin film of the inventive method;
Fig. 2 is the generalized section after the step 3 photoresist puddle development of the inventive method;
Fig. 3 is the generalized section after the step 4 silicon oxide hard mask etching of the inventive method completes;
Fig. 4 is that the step 5 of the inventive method etches silicon and stops at the generalized section after in Silicon Wafer;
Fig. 5 is the step 6 Silicon Wafer photoresist of the inventive method and etching reaction polymer remove after generalized section;
Fig. 6 is the generalized section after the step 7 Silicon Wafer front silicon oxide film removal of the inventive method;
Fig. 7 is the step 9 grinding back surface excess silicon of the inventive method until by the generalized section after worn out for silicon through hole.
In figure, description of reference numerals is as follows:
1: silicon oxide film; 2: Silicon Wafer; 3: photoresist.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is further detailed explanation.
The present invention is that a kind of realization uses the technological process of quasiconductor to realize the process of optical fiber align pedestal (OFA) array in light conduction on Silicon Wafer. This OFA film layer structure is by the photoresist of 0.1 micron��5 microns, the silicon oxide film of 3 microns-6 microns, the silicon substrate composition of 725 microns, front silicon oxide film is as the hard mask layer of silicon through hole, after the deep silicon hole 500-650 micron of dry etching, then through the silicon of the remaining 75-225 micron of grinding back surface, obtain the silicon through hole of 500-650 micron. This technological process both can reduce expense and the time of many one-step film formings, simplifies the Complicated Flow of multilayer film dry and wet etching simultaneously, and technique can degree of realization height.
As shown in Fig. 1-Fig. 7, a kind of method making optical fiber align pedestal array in silica-based technique of the present invention, specifically include following steps:
1. in reticle (mask), draw the via-hole array required for optical fiber align pedestal and size; Reticle draws array of circular apertures according to the arrangement of fiber array and size, and distinguishes the index aperture of optical fiber align pedestal positive and negative.
2. silane (SiH is used in the front of Silicon Wafer 24) growing one layer of silicon oxide film 1 with the method for plasma activated chemical vapour deposition, thickness is 3 microns-6 microns, sees Fig. 1;
3. coat photoresist 3 in Silicon Wafer 2 front of silicon oxide film 1 of having grown up, the thickness of photoresist 3 is 0.1 micron-5 microns, photoresist 3 adopt positive photoresist or negative photoresist all can, and go out array hole pattern with the reticle exposure imaging of optical fiber align pedestal, see Fig. 2;
4. in dry etching board etching oxidation silicon thin film 1 as hard mask layer: in deielectric-coating dry etching board, use tetrafluoromethane (CF4), fluoroform (CHF3) etc. the silicon oxide film 1 of 3 microns-6 microns of main etching gas etching Silicon Wafer 2 front, the photoresist 3 of this silicon oxide film 1 and residual, as the mask layer of follow-up silicon via etch, is shown in Fig. 3;
5. etching silicon through hole in silicon dry etching board, utilize photoresist 3 and silicon oxide film 1 as etching mask layer, the silicon through hole of etching 500-650 micron, main etching gas is sulfur hexafluoride (SF6), etching stopping is in Silicon Wafer 2, and etching inner evenness is less than 10%, and the thickness of the Silicon Wafer 2 of etching residue is approximately 75-225 micron, sees Fig. 4;
6. in dry ashing removes photoresist board, after removal step 4 and step 5 liang step, the photoresist 3 of etching residue and etching reaction polymer (can produce substantial amounts of etching reaction by-product (i.e. etching reactive polymeric thing) in step 4 and step 5 dry etching process, stick to through-hole wall and Silicon Wafer 2 surface, follow-up optical fiber perforation difficulty can be caused, this etching reaction by-product is matter property, it is possible to use O in dry ashing removes photoresist board2Reaction is removed), see Fig. 5;
7. the admixing medical solutions (mixed proportion of Fluohydric acid. and ammonium fluoride ranges for 1:200 to 1:2) using Fluohydric acid. (HF) and ammonium fluoride in wet method acid tank etches the silicon oxide film 1 that Silicon Wafer 2 front and back is remaining, and the etch rate of silicon oxide film 1 is approximatelySee Fig. 6;
8. stick blue film on pad pasting board in the front of Silicon Wafer 2, protection front description is not by the damage of follow-up grinding back surface board;
9. the remaining silicon of the 75-225 micron of residual after grinding steps 5 dry etching on grinder station overleaf, in process of lapping, grinding limit in limit is cleaned, until by worn out for silicon through hole (in grinding thinning process, grinding limit, limit pure water rinsing, the chip of grinding is washed away from silicon chip back side, after finally again silicon chip being dried process, grinding completes), the uniformity of grinding back surface is fine, it is approximately in face within 3 microns, grinding precision high (grinding precision is approximately 0.01-1 micron), the roughness at Silicon Wafer 2 back side, within 0.1 micron, is shown in Fig. 7.
10., after grinding back surface completes, the blue film in Silicon Wafer 2 front is removed by film stripping machine platform; After process above completes, it is possible to obtain uniform pore diameter good, degree of accuracy is high, 126-150 micron (such as, the 126 microns) aperture of inner wall smooth, the optical fiber align pedestal array of 500-650 micrometer depth.
Claims (11)
1. the method making optical fiber align pedestal array in silica-based technique, it is characterised in that comprise the steps:
1.1 draw the via-hole array required for optical fiber align pedestal and size in reticle;
1.2 at one layer of silicon oxide film of the front of Silicon Wafer growth;
1.3 coat photoresist in the Silicon Wafer front having grown silicon oxide film, and go out array hole pattern with the reticle exposure imaging of optical fiber align pedestal;
1.4 in dry etching board etching oxidation silicon thin film as hard mask layer;
1.5 etch silicon deep hole in silicon dry etching board, and etching stopping is in Silicon Wafer;
1.6 photoresist removing etching residue in the board that removes photoresist and etching reaction polymer;
1.7 silicon oxide films etching Silicon Wafer front and back residual in wet method acid tank;
1.8 stick blue film in Silicon Wafer front, protect front description;
1.9 silicon grinding silicon deep hole etching residue overleaf on grinder station, until silicon through hole is formed;
The blue film in Silicon Wafer front is removed by 1.10, and technique completes.
2. the method for claim 1, it is characterised in that in described step 1.1, draws array of circular apertures according to the arrangement of fiber array and size in reticle, and distinguishes the index aperture of optical fiber align pedestal positive and negative.
3. the method for claim 1, it is characterised in that in described step 1.2, uses the silicon oxide film that plasma enhanced chemical vapor deposition method grows a layer 3 microns-6 microns in the front of Silicon Wafer.
4. the method for claim 1, it is characterised in that in described step 1.3, the thickness of described photoresist is 0.1 micron-5 microns; Described photoresist is positive photoresist or negative photoresist.
5. the method for claim 1, it is characterized in that, in described step 1.4, in dry etching board, use comprises the photoresist mask layer as follow-up silicon via etch of the silicon oxide film of 3 microns-6 microns of the main etching gas etching Silicon Wafer front of tetrafluoromethane and fluoroform, this silicon oxide film and residual.
6. the method for claim 1, it is characterized in that, in described step 1.5, in silicon dry etching board, utilize the photoresist of step 1.4 gained and silicon oxide film as etching mask layer, the deep silicon hole of partial etching 500 microns-650 microns, main etching gas is sulfur hexafluoride, etching stopping is in Silicon Wafer, and the inner evenness of etching depth is 10%, and the silicon thickness of etching residue is 75 microns-225 microns.
7. the method for claim 1, it is characterised in that in described step 1.6, removes the residual photoresist after step 1.4,1.5 liang of steps and etching reaction by-product in the board that removes photoresist; Described etching reaction by-product results from step 1.4 and step 1.5 dry etching process, and described etching reaction by-product sticks to through-hole wall and silicon wafer surface, can cause follow-up optical fiber perforation difficulty.
8. method as claimed in claim 7, it is characterised in that in described step 1.6, described in the board that removes photoresist be that dry ashing removes photoresist board, described etching reaction by-product is Organic substance, uses O in this dry ashing removes photoresist board2This etching reaction by-product is removed in reaction.
9. the method for claim 1, it is characterised in that in described step 1.7, at the silicon oxide film that Silicon Wafer front and back is remaining after using the admixing medical solutions etch step 1.6 of Fluohydric acid. and ammonium fluoride in wet method acid tank; The mixed proportion of described Fluohydric acid. and ammonium fluoride ranges for 1:200 to 1:2; The etch rate of described silicon oxide film is
10. the method as described in claim 1 or 6, it is characterized in that, in described step 1.9, the silicon of 75 micron of-225 micron thickness of residual described in grinding steps 1.5 on grinder station overleaf, grinding limit, limit is cleaned, until by worn out for silicon through hole, the uniformity of grinding back surface is in face within 3 microns, grinding precision is 0.01-1 micron, and the roughness of wafer rear is within 0.1 micron.
11. the method for claim 1, it is characterised in that obtain uniform pore diameter after step 1.10 completes good, degree of accuracy is high, and the 126-150 micron pore size of inner wall smooth, the degree of depth is the optical fiber align pedestal array of 500-650 micron.
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| CN107808822A (en) * | 2017-09-29 | 2018-03-16 | 上海华虹宏力半导体制造有限公司 | The lithographic method of contact hole |
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| CN1522380A (en) * | 2001-06-29 | 2004-08-18 | 美莎诺普有限公司 | Post-formation feature optimization |
| CN102590928A (en) * | 2012-02-14 | 2012-07-18 | 北京瑞合航天电子设备有限公司 | Multilayer integral optical fiber close-packed module and manufacturing method thereof |
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| US20010055460A1 (en) * | 2000-04-04 | 2001-12-27 | Steinberg Dan A. | Two-dimensional array for rotational alignment of polarization maintaining optical fiber |
| WO2002073274A1 (en) * | 2001-03-14 | 2002-09-19 | Zygo Corporation | Fiber array fabrication |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1522380A (en) * | 2001-06-29 | 2004-08-18 | 美莎诺普有限公司 | Post-formation feature optimization |
| CN102590928A (en) * | 2012-02-14 | 2012-07-18 | 北京瑞合航天电子设备有限公司 | Multilayer integral optical fiber close-packed module and manufacturing method thereof |
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