CN103852822B - The manufacture method of optical fiber align pedestal array - Google Patents
The manufacture method of optical fiber align pedestal array Download PDFInfo
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- CN103852822B CN103852822B CN201210512760.1A CN201210512760A CN103852822B CN 103852822 B CN103852822 B CN 103852822B CN 201210512760 A CN201210512760 A CN 201210512760A CN 103852822 B CN103852822 B CN 103852822B
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Abstract
The invention discloses a kind of manufacture method of optical fiber align pedestal array, comprise step: make reticle.At the back side growing silicon oxide film one of Silicon Wafer.At the front growing silicon oxide film two of Silicon Wafer.At the back side silicon nitride silicon thin film three of Silicon Wafer.At the front of Silicon Wafer coating photoresist, and carry out exposure imaging.Carry out silicon oxide film two and etch formation hard mask layer.Carry out silicon etching and form silicon through hole.The silicon oxide film one of silicon via bottoms is etched.Remove photoresist and etching reaction polymkeric substance.The described silicon nitride film three at the Silicon Wafer back side is removed.Silicon oxide film one and two is removed, forms optical fiber align pedestal array.The present invention can form the optical fiber align pedestal array that precision is high, volume is little, and process stabilizing, output are high, can eliminate production run middle infrared (Mid-IR) scanister scanning Silicon Wafer time fault thus can be suitable for large-scale automated production, raising production equipment utilization rate and enhance productivity.
Description
Technical field
The present invention relates to a kind of SIC (semiconductor integrated circuit) method of manufacturing technology, particularly relate to a kind of manufacture method of optical fiber align pedestal array.
Background technology
Current, the application of optical communication device is more and more extensive, and fiber to the home engineering also starts progressively to carry out in developed area.In a photosystem, need multiple optical-fibre channel for the process of light signal, and elongated optical fiber need the quality of the upper guarantee fixed fiber of optical fiber align pedestal (OFA) being fixed on One's name is legion to meet system requirements.Therefore the high and process stabilizing of the alignment precision primary demand that to be optical signal power loss little.
What current industry was the most frequently used is adopt the method for lf glass to make optical fiber through hole pedestal, lf method has manufacture craft coarse, alignment precision is low, high and the shortcoming of inefficiency of cost, the bad problem causing optical signal power loss serious of optical fiber align, in the urgent need to a kind of high precision, the manufacture craft of low cost and high yield replaces it.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of manufacture method of optical fiber align pedestal array, the optical fiber align pedestal array that precision is high, volume is little can be formed, and process stabilizing, output are high, can eliminate production run middle infrared (Mid-IR) scanister scanning Silicon Wafer time fault thus can be suitable for large-scale automated production, raising production equipment utilization rate and enhance productivity.
For solving the problems of the technologies described above, the manufacture method of optical fiber align pedestal array provided by the invention comprises the steps:
Step one, in reticle, draw optical fiber align pedestal array pattern, this optical fiber align pedestal array pattern defines size and the arranged array in the hole of optical fiber align pedestal.
Step 2, grow one deck silicon oxide film one at the back side of Silicon Wafer.
Step 3, grow one deck silicon oxide film two in the front of described Silicon Wafer.
Superficial growth one deck silicon nitride film three of step 4, described silicon oxide film one at the back side of described Silicon Wafer.
The surface coating photoresist of step 5, described silicon oxide film two in the front of described Silicon Wafer, carry out exposure imaging by described reticle to described photoresist and form photoetching offset plate figure, described optical fiber align pedestal array pattern is transferred in described photoetching offset plate figure.
Step 6, with described photoetching offset plate figure for mask in deielectric-coating dry etching board to described silicon oxide film two carry out etching formed hard mask layer.
Step 7, with described photoetching offset plate figure and described hard mask layer for mask, in silicon dry etching board, carry out silicon etching to described Silicon Wafer form silicon through hole, the etching stopping of described silicon through hole is on the upper surface of described silicon oxide film one.
After step 8, described silicon through hole are formed, deielectric-coating dry etching board etches the described silicon oxide film one of described silicon via bottoms and stops on the upper surface of described silicon nitride film three.
After the etching of step 9, described silicon oxide film one completes, remove described photoresist and etching reaction polymkeric substance removing photoresist in board.
Step 10, carry out etching described silicon nitride film three removal by the described Silicon Wafer back side in wet method acid tank.
Step 11, carry out etching described silicon oxide film one and described silicon oxide film two removal in wet method acid tank, form the optical fiber align pedestal array be made up of described silicon through hole.
Further improvement is, the pedestal of optical fiber align described in step one array pattern comprises the array of circular apertures figure that formed according to fiber size and fiber array arrangement and the index aperture figure for the pros and cons of distinguishing described optical fiber align pedestal.
Further improvement is, in step 2, using plasma strengthens chemical vapor deposition method and forms described silicon oxide film one, and the thickness of described silicon oxide film one is 0.5 micron ~ 2.5 microns.
Further improvement is, in step 3, using plasma strengthens chemical vapor deposition method and forms described silicon oxide film two, and the thickness of described silicon oxide film two is 3 microns ~ 6 microns.
Further improvement is, the thickness of silicon nitride film three described in step 4 is 0.5 micron ~ 1 micron.
Further improvement is, comprises tetrafluoromethane, fluoroform in step 6 to the process gas that described silicon oxide film two etches.
Further improvement is, the thickness of described Silicon Wafer is 725 microns, and the degree of depth of the through hole of silicon described in step 7 is 725 microns, and the process gas of described silicon via etch comprises sulfur hexafluoride.
Further improvement is, comprises tetrafluoromethane, fluoroform in step 8 to the process gas that described silicon oxide film one etches; When etching described silicon oxide film one, described in described silicon oxide film a pair, the Selection radio of silicon nitride film three is 2 ~ 4.
Further improvement is, is strong phosphoric acid to the liquid of the wet etching of described silicon nitride film three in step 10.
Further improvement is, is hydrofluorite to the liquid of the wet etching of described silicon oxide film one and described silicon oxide film two in step 11.
The inventive method forms optical fiber align pedestal array by the lithographic etch process of silicon substrate, can improve the precision of optical fiber align pedestal array and reduce volume, and process stabilizing, output is high.The inventive method forms a silicon nitride film again by the back side of the silicon oxide film at the back side of Silicon Wafer, be transparent characteristic relative to silicon oxide film to infrared ray, the inventive method utilizes silicon nitride film to the opaque characteristic of infrared ray, when can avoid adopting separately silicon oxide film can there is the fault that can not scan Silicon Wafer in infrared scanner, thus production run middle infrared (Mid-IR) scanister can be enable normally to realize the scanning of Silicon Wafer, due to semiconductor equipment to realize automated production time, all need to adopt infrared scanner whether to exist and quantity to scan Silicon Wafer, such Silicon Wafer that could realize automatically passes in and out semiconductor equipment and carries out corresponding technique, the large-scale automated production that can be suitable in the process of the present invention, improve the utilization rate of production equipment and enhance productivity.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:
Fig. 1 is embodiment of the present invention method flow diagram;
Fig. 2 A-Fig. 2 I is the device architecture figure in each step of embodiment of the present invention method.
Embodiment
As shown in Figure 1, be embodiment of the present invention method flow diagram; As shown in Fig. 2 A to Fig. 2 I, be the device architecture figure in each step of embodiment of the present invention method.The manufacture method of embodiment of the present invention optical fiber align pedestal array comprises the steps:
Step one, in reticle, draw optical fiber align pedestal array pattern, this optical fiber align pedestal array pattern defines size and the arranged array in the hole of optical fiber align pedestal.Described optical fiber align pedestal array pattern comprises the array of circular apertures figure that formed according to fiber size and fiber array arrangement and the index aperture figure for the pros and cons of distinguishing described optical fiber align pedestal.
Step 2, as shown in Figure 2 A, grow one deck silicon oxide film 1 at the back side of Silicon Wafer 1, the thickness of described Silicon Wafer 1 is 725 microns.Using plasma strengthens chemical vapor deposition method and forms described silicon oxide film 1, and the thickness of described silicon oxide film 1 is 0.5 micron ~ 2.5 microns.
Step 3, as shown in Figure 2 B, grow one deck silicon oxide film 23 in the front of described Silicon Wafer 1.Using plasma strengthens chemical vapor deposition method and forms described silicon oxide film 23, and the thickness of described silicon oxide film 23 is 3 microns ~ 6 microns.
Step 4, as shown in Figure 2 C, superficial growth one deck silicon nitride film 34 of the described silicon oxide film 1 at the back side of described Silicon Wafer 1.The thickness of described silicon nitride film 34 is 0.5 micron ~ 1 micron.
Step 5, as shown in Figure 2 D, the surface coating photoresist 5 of the described silicon oxide film 23 in the front of described Silicon Wafer 1, by described reticle, described photoresist 5 is carried out to exposure imaging and forms photoetching offset plate figure, described optical fiber align pedestal array pattern is transferred in described photoetching offset plate figure.The thickness of described photoresist 5 is 0.5 micron ~ 1 micron.
Step 6, as shown in Figure 2 E, forms hard mask layer with described photoetching offset plate figure for mask carries out etching to described silicon oxide film 23 in deielectric-coating dry etching board.Tetrafluoromethane, fluoroform are comprised to the process gas that described silicon oxide film 23 etches.After this step etching, photoresist 3 can be consumed certain thickness.
Step 7, as shown in Figure 2 F, with described photoetching offset plate figure and described hard mask layer for mask, in silicon dry etching board, carry out silicon etching to described Silicon Wafer 1 form silicon through hole 6, the etching stopping of described silicon through hole 6 is on the upper surface of described silicon oxide film 1.The degree of depth of described silicon through hole 6 is 725 microns, and the process gas that described silicon through hole 6 etches comprises sulfur hexafluoride.
Step 8, as shown in Figure 2 G, described silicon through hole 6 etches the described silicon oxide film 1 bottom described silicon through hole 6 and stops on the upper surface of described silicon nitride film 34 after being formed on deielectric-coating dry etching board.Tetrafluoromethane, fluoroform are comprised to the process gas that described silicon oxide film 1 etches; When etching described silicon oxide film 1, the Selection radio of described silicon oxide film 1 to described silicon nitride film 34 is 2 ~ 4.
Step 9, as shown in Figure 2 G, after the etching of described silicon oxide film 1 completes, removes residual described photoresist 5 and etching reaction polymkeric substance removing photoresist in board.
Step 10, as illustrated in figure 2h, carry out etching in wet method acid tank and the described silicon nitride film 34 at described Silicon Wafer 1 back side is removed.Be strong phosphoric acid to the liquid of the wet etching of described silicon nitride film 34.
Step 11, as shown in figure 2i, carries out etching and described silicon oxide film 1 and described silicon oxide film 23 is removed, form the optical fiber align pedestal array be made up of described silicon through hole 6 in wet method acid tank.Be hydrofluorite to the liquid of the wet etching of described silicon oxide film 1 and described silicon oxide film 23.
Above by specific embodiment to invention has been detailed description, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (10)
1. a manufacture method for optical fiber align pedestal array, is characterized in that, comprises the steps:
Step one, in reticle, draw optical fiber align pedestal array pattern, this optical fiber align pedestal array pattern defines size and the arranged array in the hole of optical fiber align pedestal;
Step 2, grow one deck silicon oxide film one at the back side of Silicon Wafer;
Step 3, grow one deck silicon oxide film two in the front of described Silicon Wafer;
Superficial growth one deck silicon nitride film three of step 4, described silicon oxide film one at the back side of described Silicon Wafer;
The surface coating photoresist of step 5, described silicon oxide film two in the front of described Silicon Wafer, carry out exposure imaging by described reticle to described photoresist and form photoetching offset plate figure, described optical fiber align pedestal array pattern is transferred in described photoetching offset plate figure;
Step 6, with described photoetching offset plate figure for mask in deielectric-coating dry etching board to described silicon oxide film two carry out etching formed hard mask layer;
Step 7, with described photoetching offset plate figure and described hard mask layer for mask, in silicon dry etching board, carry out silicon etching to described Silicon Wafer form silicon through hole, the etching stopping of described silicon through hole is on the upper surface of described silicon oxide film one;
After step 8, described silicon through hole are formed, deielectric-coating dry etching board etches the described silicon oxide film one of described silicon via bottoms and stops on the upper surface of described silicon nitride film three;
After the etching of step 9, described silicon oxide film one completes, remove described photoresist and etching reaction polymkeric substance removing photoresist in board;
Step 10, carry out etching described silicon nitride film three removal by the described Silicon Wafer back side in wet method acid tank;
Step 11, carry out etching described silicon oxide film one and described silicon oxide film two removal in wet method acid tank, form the optical fiber align pedestal array be made up of described silicon through hole.
2. the method for claim 1, is characterized in that: the pedestal of optical fiber align described in step one array pattern comprises the array of circular apertures figure that formed according to fiber size and fiber array arrangement and the index aperture figure for the pros and cons of distinguishing described optical fiber align pedestal.
3. the method for claim 1, is characterized in that: in step 2, using plasma strengthens chemical vapor deposition method and forms described silicon oxide film one, and the thickness of described silicon oxide film one is 0.5 micron ~ 2.5 microns.
4. the method for claim 1, is characterized in that: in step 3, using plasma strengthens chemical vapor deposition method and forms described silicon oxide film two, and the thickness of described silicon oxide film two is 3 microns ~ 6 microns.
5. the method for claim 1, is characterized in that: the thickness of silicon nitride film three described in step 4 is 0.5 micron ~ 1 micron.
6. the method for claim 1, is characterized in that: comprise tetrafluoromethane, fluoroform to the process gas that described silicon oxide film two etches in step 6.
7. the method for claim 1, is characterized in that: the thickness of described Silicon Wafer is 725 microns, and the degree of depth of the through hole of silicon described in step 7 is 725 microns, and the process gas of described silicon via etch comprises sulfur hexafluoride.
8. the method for claim 1, is characterized in that: comprise tetrafluoromethane, fluoroform to the process gas that described silicon oxide film one etches in step 8; When etching described silicon oxide film one, described in described silicon oxide film a pair, the Selection radio of silicon nitride film three is 2 ~ 4.
9. the method for claim 1, is characterized in that: be strong phosphoric acid to the liquid of the wet etching of described silicon nitride film three in step 10.
10. the method for claim 1, is characterized in that: be hydrofluorite to the liquid of the wet etching of described silicon oxide film one and described silicon oxide film two in step 11.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105759364B (en) * | 2014-12-16 | 2018-12-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of manufacturing method and optical fiber collimator fixture of optical fiber collimator fixture |
| CN106335871A (en) * | 2016-08-30 | 2017-01-18 | 北京遥测技术研究所 | Manufacturing method of silicon-based MEMS micro nano through hole structure |
| CN107808822A (en) * | 2017-09-29 | 2018-03-16 | 上海华虹宏力半导体制造有限公司 | The lithographic method of contact hole |
| CN109375330B (en) * | 2018-10-18 | 2021-03-30 | 哈尔滨工程大学 | System and method for aligning optical fiber array and fly-eye lens |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1214774A (en) * | 1996-03-25 | 1999-04-21 | 艾利森电话股份有限公司 | Method and device for waveguide connection |
| US6516448B1 (en) * | 1999-02-19 | 2003-02-04 | Telefonaktiebolaget Lm Ericsson (Publ) | Fiber aligning structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6595698B2 (en) * | 2000-06-13 | 2003-07-22 | Siwave, Inc. | High density fiber terminator/connector |
| US6886989B2 (en) * | 2000-12-15 | 2005-05-03 | Intel Corporation | Alignment of fiber optic bundle to array waveguide using pins |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1214774A (en) * | 1996-03-25 | 1999-04-21 | 艾利森电话股份有限公司 | Method and device for waveguide connection |
| US6516448B1 (en) * | 1999-02-19 | 2003-02-04 | Telefonaktiebolaget Lm Ericsson (Publ) | Fiber aligning structure |
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