CN101383388B - Manufacturing method for photoelectric sensor with receiving active region on a inclined surface - Google Patents
Manufacturing method for photoelectric sensor with receiving active region on a inclined surface Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 92
- 230000008569 process Effects 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000004377 microelectronic Methods 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims description 47
- 230000007797 corrosion Effects 0.000 claims description 42
- 238000005260 corrosion Methods 0.000 claims description 42
- 238000005520 cutting process Methods 0.000 claims description 33
- 239000010410 layer Substances 0.000 claims description 31
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 25
- 238000001465 metallisation Methods 0.000 claims description 21
- 238000001259 photo etching Methods 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 15
- 238000004026 adhesive bonding Methods 0.000 claims description 13
- 230000002950 deficient Effects 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000000347 anisotropic wet etching Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 36
- 239000003292 glue Substances 0.000 description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 12
- 238000001459 lithography Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 108090000723 Insulin-Like Growth Factor I Proteins 0.000 description 1
- 102000013275 Somatomedins Human genes 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- NZJMPGDMLIPDBR-UHFFFAOYSA-M tetramethylazanium;hydroxide;hydrate Chemical compound O.[OH-].C[N+](C)(C)C NZJMPGDMLIPDBR-UHFFFAOYSA-M 0.000 description 1
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a manufacturing method for a photoelectric detector with an active receiving area positioned on an inclined surface, which belongs to the technical field of the photoelectric detector. The method comprises the following steps: the inclined surface of a deep kerf is etched on a semiconductor substrate by a wet method, and a high-step pattern substrate is formed; the epitaxial growth of the detector material structure is performed on the high-step pattern substrate; the micro-electronic process manufacture is carried out on the high-step pattern substrate on which the epitaxial growth is finished, and the photoelectric detector with the active receiving area positioned on the inclined surface is formed. By using the invention, the performance of the photoelectric detector can be enhanced, the cost is reduced, and the purpose of simple and convenient planar light interconnection with low cost and high efficiency is achieved.
Description
Technical field
The present invention relates to the photodetector technical field, relate in particular to a kind of manufacture method that active area is positioned at the photodetector on the inclined-plane that receives, utilized the corrosion technology on smooth inclined-plane on the Semiconductor substrate, the microelectronic chip manufacturing process technology on the epitaxial material growing technology on the deep trouth inclined-plane, the design of the epitaxial layer structure of high-performance optical electric explorer and the deep trouth inclined-plane.
Background technology
Optical interconnection has plurality of advantages such as big capacity, two-forty, low-power consumption, low cost, strong interference immunity, can overcome electricity and be interconnected at shortcomings such as low-density, high loss and long delay in the Large Volume Data communication.In the short distance high-speed data communication between rack and rack, between printed panel and the printed panel, between chip and the chip, high-speed and high-density parallel multi-channel optical interconnection is being used for maybe will being used to as high-end electronic products such as high-performance computer system, server, high-end routers.The photoelectric device of low-cost and high-performance, and low-cost highly reliable optical interconnection scheme is the key of this technology of extensive use.
As shown in Figure 1, Fig. 1 is the interconnected schematic diagram of planar light of inclined-plane photodetector realization.The novel inclined-plane that the detection active area is positioned on the inclined-plane receives photodetector 102, can be integrated with polymer optical wave guide 103, or with optical fiber 104 to be combined to form planar light interconnected, the variation that need not the optic path direction just can realize the autoregistration coupling, greatly reduce optical loss and assembling complexity, can realize that low cost, high efficiency, easy planar light are interconnected.
The inclined-plane photodetector is by corrosion substrate inclined-plane, extension on the inclined-plane, processes on the inclined-plane, the photodetection that the realization inclined-plane receives.Technological requirement is smooth to deep trouth corrosion inclined-plane, and quality requirement is satisfied in high step epitaxial material growth, can realize photoetching on the high step substrate and metal-stripping etc.
Caustic solution about semi-conducting material has many reports (for example to report [1], A.R.Clawson., " Guide to reference on III-V semiconductor chemical etching ", MaterialsScience and Engineering, 31 (2001): 1-438), for the seal-packed substrate slice in new Kaifeng, the inclined-plane of corrosion and bottom surface evenness are all fine.But, for being exposed to outer a period of time or substrate surface the substrate slice of more defective is arranged, when anisotropic wet corrodes, can make defective further extend amplification, cause bottom surface and inclined-plane a large amount of dislocation defects to occur.
Eliminate million corrosion of employing usually or add surfactant (report [2] for defective, Chii-Rong Yang, Cheng-Hao Yang and Po-Ying Chen, " Study on anisotropicsilicon etching characteristics in various surfactant-added tetramethylammonium hydroxide water solutions ", Journal of Micromechanics andMicroengineering, 15 (2005): 2028-2037).In addition, if the reactant in the corrosion process can not in time dissolve removal, can remain on inclined-plane and the bottom surface defective when causing epitaxial growth.Thereby, need effectively easy corrosion pre-treatment and post-processing technology of exploitation, to improve the performance of photodetector.
Photoetching process is crucial in the prepared technology on the high step substrate, need evenly to apply photoresist, even gluing method has: rotation coating, spray application and electroplating deposition cover (report [3], Nga PhuongPham, E.Boellaard, Joachim N.Burghartz, et al., " Photoresist CoatingMethods for the Integration of Novel 3-D RF Microstructures ", Journal ofMicroelectromechanical Systems, 13 (3), June 2004:491-499).The uniformity of the method for electroplating deposition covering photoresist is best, but needs special plating photoresist solution and electroplating deposition equipment, and the method for spray application photoresist also depends on equipment, so cost is higher.
Utilize existing equipment for evenly dividing glue, develop the even glue technology on the high step cutting pattern substrate, and the photolithographic exposure technology, can reduce cost effectively.On the basis that lithographic issues solves, utilize the microelectronic chip manufacturing process to realize the manufacturing of the photodetector that the inclined-plane receives.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of manufacture method that active area is positioned at the photodetector on the inclined-plane that receives, and to improve the performance of photodetector, reduces cost, and realizes that low cost, high efficiency, easy planar light are interconnected.
(2) technical scheme
For achieving the above object, the invention provides a kind of manufacture method that active area is positioned at the photodetector on the inclined-plane that receives, this method comprises:
Wet etching goes out the deep trouth inclined-plane on Semiconductor substrate, forms high step cutting pattern substrate;
Epitaxial growth at the enterprising row detector material structure of high step cutting pattern substrate that forms;
Carry out the microelectronic technique manufacturing finishing on the epitaxially grown high step cutting pattern substrate, form and receive active area and be positioned at photodetector on the inclined-plane.
In the such scheme, the described step that goes out the deep trouth inclined-plane at wet etching on the Semiconductor substrate comprises: make etching mask on Semiconductor substrate, use isotropic corrosive liquid that substrate is polished, remove the defective on surface, and then carry out anisotropic deep trouth corrosion; H is used in the corrosion back
2SO
4: H
2O=5: 1 solution polishing inclined-plane, remove the reaction residual particles that generates in the corrosion process.
In the such scheme, described Semiconductor substrate is a n type GaAs substrate, or is SI type GaAs substrate;
Described etching mask is the photoresist mask, or is the medium mask;
Described isotropic corrosive liquid is H
2SO
4: H
2O
2: H
2O, solution ratio are 3: 1: 1, and corrosion rate is 5 μ m/min;
Described carrying out adopted anisotropic wet etching solution when anisotropic deep trouth corrodes, and this anisotropic wet etching solution adopts the etchant solution of any proportioning in following three kinds of proportionings: H
3PO
4: H
2O
2: H
2O=3: 4: 12, H
2SO
4: H
2O
2: H
2O=1: 8: 80 or HCl: H
2O
2: H
2O=1: 4: 40.
In the such scheme, described epitaxially grown step at the enterprising row detector material structure of high step cutting pattern substrate that forms comprises: adopt molecular beam epitaxy MBE or metal organic chemical vapor deposition MOCVD method, grown buffer layer, n type ohmic contact layer, intrinsic layer, anti-reflecting layer and p type ohmic contact layer successively on the high step cutting pattern substrate that forms.
In the such scheme, described in carrying out the epitaxially grown process of material for detector structure, adopt growth interruption technology and monolayer growing technology.
In the such scheme, described Semiconductor substrate is a n type GaAs substrate, or is SI type GaAs substrate; For n type GaAs substrate, describedly comprise finishing the step of carrying out the microelectronic technique manufacturing on the epitaxially grown high step cutting pattern substrate: the photoetching of etching mask figure, the growth of deep trouth burn into epitaxial material, the photoetching of light receiving window figure, light receiving window burn into p type ohmic metallization, thinning back side, back side ohmic metallization, scribing; For SI type GaAs substrate, describedly comprise finishing the step of carrying out the microelectronic technique manufacturing on the epitaxially grown high step cutting pattern substrate: the photoetching of etching mask figure, the growth of deep trouth burn into epitaxial material, the photoetching of light receiving window figure, light receiving window burn into are isolated mesa etch, medium passivation, contact window etching, p type ohmic metallization, n type ohmic metallization, thinning back side, scribing.
In the such scheme, adopt electron beam evaporation Pt/Ti/Pt/Au to realize that the thickness of Pt/Ti/Pt/Au is 200/200/500/2000A in the step of described p type ohmic metallization; Adopt electron beam evaporation Au/GeNi to realize that the thickness of Au/GeNi is 3500A in the step of described n electrode metalization.
In the such scheme, adopt quick ohmic contact alloy technology during described ohmic metallization, the condition of this quick ohmic contact alloy technology is: 400 degree, 50 seconds.
In the such scheme, for SI type GaAs substrate, the step medium of described medium passivation is as anti-reflective film, thickness be in the medium operation wavelength 1/4th, in the dielectric etch technology of back, do not need etching light-receiving window medium; Perhaps medium is as common passivation protection layer, and thickness does not have specific (special) requirements, but needs to etch light-receiving window medium in the dielectric etch technology of back.
In the such scheme, describedly carry out the step that microelectronic technique is made on the epitaxially grown high step cutting pattern substrate finishing, adopt the re-expose technology of photoresist in the photoresist paint-on technique of high step cutting pattern substrate and the deep trouth;
Even gluing method of two steps and the even gluing method of inversion that the photoresist painting method of described high step cutting pattern substrate, employing rotation center misplace mutually and separate obtain uniform photoresist and cover;
The re-expose technology of photoresist in the described deep trouth is exposed at twice, is developed and removes the interior photoresist of deep trouth, reduces the total time of exposing and needing.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilizes the present invention,, use isotropic corrosive liquid that substrate is polished, remove the defective on surface, and then carry out anisotropic deep trouth corrosion by on Semiconductor substrate, making etching mask; H is used in the corrosion back
2SO
4: H
2O=5: 1 solution polishing inclined-plane, remove the reaction residual particles that generates in the corrosion process, improved the epitaxial growth quality of photodetection modulator material greatly.
2, utilize the present invention, utilize existing equipment for evenly dividing glue, develop the even glue technology on the high step cutting pattern substrate, and the photolithographic exposure technology, cost reduced effectively.
3, utilize the present invention, the active area of this novel photoelectric-detection device is positioned on the inclined-plane, integrated with polymer optical wave guide, realize the light path autoregistration in fiber waveguide photoetching process, do not need extra light path to aim at, or integrated with optical fiber, do not need the change of optic path direction, can realize that the planar light of simple and effective is interconnected.
Description of drawings
The interconnected schematic diagram of planar light that Fig. 1 realizes for the inclined-plane photodetector;
Fig. 2 receives the method flow diagram that active area is positioned at the photodetector on the inclined-plane for manufacturing provided by the invention;
Fig. 3 covers schematic diagram for the photoresist of the even glue of rotation;
Fig. 4 is that the photoresist of the even gluing method of two steps rotation covers schematic diagram;
Fig. 5 is for being inverted even gluing method schematic diagram;
Fig. 6 is an exposure light distribution schematic diagram on the high step cutting pattern
Fig. 7 receives the process flow diagram of photodetector (n type GaAs substrate) for the inclined-plane;
Fig. 8 is a deep trouth etch pattern substrate schematic diagram;
Fig. 9 is detector epitaxial material structure figure;
Figure 10 is light receiving window corrosion schematic diagram;
Figure 11 is a p type ohmic contact schematic diagram;
Figure 12 is a n type back electrode schematic diagram;
Figure 13 receives the photodetector schematic diagram for the inclined-plane;
Figure 14 receives the process flow diagram of photodetector (SI type GaAs substrate) for the inclined-plane;
Figure 15 is the mesa-isolated schematic diagram;
Figure 16 is medium passivation and contact window etching schematic diagram;
Figure 17 is p type and n type ohmic metallization schematic diagram;
Figure 18 is the schematic cross-section of SI GaAs foundation light electric explorer;
Figure 19 receives photodetector (SI type GaAs substrate) schematic diagram for the inclined-plane.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 2, Fig. 2 receives the method flow diagram that active area is positioned at the photodetector on the inclined-plane for manufacturing provided by the invention, and this method may further comprise the steps:
Step 201: wet etching goes out the deep trouth inclined-plane on Semiconductor substrate, forms high step cutting pattern substrate;
Step 202: in the epitaxial growth of the enterprising row detector material structure of high step cutting pattern substrate that forms;
Step 203: carry out the microelectronic technique manufacturing finishing on the epitaxially grown high step cutting pattern substrate, form and receive active area and be positioned at photodetector on the inclined-plane.
Below in conjunction with accompanying drawing the method that manufacturing reception active area provided by the invention is positioned at the photodetector on the inclined-plane is elaborated.
First: the preparation on deep trouth inclined-plane (being above-mentioned steps 201)
In this step, at first on Semiconductor substrate, make etching mask, use isotropic corrosive liquid that substrate is polished, remove the defective on surface, and then carry out anisotropic deep trouth corrosion; H is used in the corrosion back
2SO
4: H
2O=5: 1 solution polishing inclined-plane, remove the reaction residual particles that generates in the corrosion process.The present invention is directed to the evenness requirement on deep trouth inclined-plane, efficient controlled anisotropy deep trouth corrosion scheme is provided, comprise two kinds of substrate processing technology, a kind of is polishing technology before the substrate etching; Another kind of for corroding back residual particles treatment technology.Concrete steps are as follows:
The 1st step: the making of etching mask
This step process is a common process, and etching mask can be the photoresist mask, or the medium mask.
The 2nd step: polishing before the corrosion
This step process is primarily aimed at and is exposed to outer a period of time or surface quality is not good substrate.(hydrogen peroxide concentration 30% is the MOS level for concentrated sulfuric acid concentration 96%, phosphoric acid concentration 85%; Water is deionized water (DI H
2O); The solution ratio ratio is a volume ratio; Citric acid is 1: 1 a solution of mass ratio)
Adopt isotropic wet etching liquid H
2SO
4: H
2O
2: H
2O, solution ratio are 3: 1: 1, the about 5 μ m/min of speed.
Polishing is 2 minutes before the corrosion, can eliminate blemish effectively, avoids the inclined-plane etch pit defective to occur in follow-up anisotropic etch, avoids the bottom surface corrosion island defective to occur.
The 3rd step: deep trouth corrosion
The corrosive liquid system that this step is selected can be sulfuric acid system, phosphoric acid system or hydrochloric acid system, and the selection of solution ratio need be considered corrosion rate, corrosion evenness, corrosion inclination angle of inclined plane etc.The present invention provides 3 kinds of corrosive liquid proportionings:
(1) H
3PO
4: H
2O
2: H
2O=3: 4: 12, the about 2.2 μ m/min of speed;
(2) H
2SO
4: H
2O
2: H
2O=1: 8: 80, the about 0.5 μ m/min of speed;
(3) HCl: H
2O
2: H
2O=1: 4: 40, the about 0.25 μ m/min of speed.
According to the corrosion depth requirement, determine etching time, about 45～54 degree of corrosion inclination angle of inclined plane.
The 4th step: corrosion back polishing
This step process is primarily aimed at the removing of deep trouth corrosion back corrosion reaction thing residual particles on inclined-plane and bottom surface, for follow-up epitaxial material growth provides good substrate surface.
Adopt H
2SO
4: H
2O=5: 1 solution carries out the back polishing, soak time 2 minutes.
Second portion: the epitaxial material growth (being above-mentioned steps 202) on the high step cutting pattern substrate
In this step, on the high step cutting pattern substrate that forms, adopt molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) method, successively grown buffer layer, n type ohmic contact layer, intrinsic layer, anti-reflecting layer and p type ohmic contact layer.
Key of the present invention is the growth of high-quality extension active layer on the inclined-plane, the growth means have molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD), and wherein the crucial growing technology of Cai Yonging has: growth interruption technology and monolayer growing technology.
The growth interruption technology is to stop growing a period of time in substrate buffer growth process, cuts off the continuity of defective, again the resilient coating of growing high-quality continuously thereon.
The unimolecule growing technology is the growing technology that the growth of key stratum is adopted monolayer in outer layer growth, reduce growth rate, give molecular motion adequate time and space, can further eliminate the influence that substrate rises and falls, the epitaxial material that growing high-quality is smooth.
Third part: the device making method of high step cutting pattern substrate (being above-mentioned steps 203)
In this step, owing to adopt the microelectronic chip manufacturing process to realize, the high step cutting pattern substrate that its deep trouth brings makes technology difficulty increase, and key issue is reliable photoetching process.The present invention is directed to high step cutting pattern substrate characteristics, two key technologies are provided: the one, the photoresist paint-on technique of high step cutting pattern substrate, the 2nd, the re-expose technology of photoresist in the deep trouth.Described in detail respectively below:
(1) the photoresist paint-on technique of high step cutting pattern substrate
Rotate when applying photoresist because action of centrifugal force, make that the interior photoresist of deep trouth is thicker, photomask surface glue is thinner, and since the deep trouth degree of depth usually much larger than the photoresist coating thickness, make extremely thinly, dissolvedly easily in the exposure imaging process fall, can't play masking action away from inclined-plane upper edge 303 photoresists of pivot one side, as shown in Figure 3, Fig. 3 covers schematic diagram for the photoresist of the even glue of rotation.The method that the present invention adopts has: even gluing method of two steps and the even gluing method of inversion that the center of circle misplaces mutually and separates.
As shown in Figure 4, Fig. 4 is the photoresist covering schematic diagram of the even gluing method of two steps rotation.The even gluing method of two steps that the center of circle misplaces mutually and separates deliberately is offset to pivot the marginal position of one side exactly when even glue, spin coating first pass photoresist is shown in Fig. 4 (a); Then pivot is positioned at a relative side of pivot for the first time, second time photoresist of spin coating once more, because it is opposite during twice photoresist spin coating to the centrifugal force direction on most of deep trouth inclined-plane, and between twice photoresist certain effect of dissolving each other is arranged, can better solve the thin excessively problem of inclined-plane one side top edge photoresist, shown in Fig. 4 (b).
Being inverted even gluing method, is exactly elder generation's low speed spin coating one deck photoresist on substrate, then sol evenning machine 501 is inverted, and at a high speed the photoresist spin coating is opened again, and as shown in Figure 5, Fig. 5 spares the gluing method schematic diagram for being inverted.Select the photoresist of suitable viscosity, adjust rotating speed and even glue step, can solve the thin excessively problem of inclined-plane one side top edge photoresist, obtaining relatively uniformly, photoresist covers.
(2) the re-expose technology of photoresist in the deep trouth
The method of spin coating photoresist can make that the interior photoresist thickness of deep trouth is thicker, and because the existence of step, the leakage of light can take place during exposure, because thick glue bottom light income seldom, needing increases the time for exposure, if the time for exposure is long, can make the upper surface figure be damaged, as shown in Figure 6, Fig. 6 is an exposure light distribution schematic diagram on the high step cutting pattern.The present invention adopts the re-expose technology, and the control time for exposure, first exposure imaging is removed a part of photoresist in the deep trouth, former again bit alignment, and exposure imaging is removed the photoresist of nubbin; By with the thick photoresist method removed of exposure imaging at twice, reduce the difficulty of each exposure, can reduce total time of exposing and needing, reduce destruction to the upper surface figure.
Adopt photoetching method of the present invention, can solve the lithographic issues of high step cutting pattern substrate preferably, thereby make gradation etching technology, metal lift-off material etc. be achieved.The photodetector that inclined-plane of the present invention receives can use the GaAs substrate of n type or the GaAs substrate of semi-insulating (SI).
(1) use n type GaAs substrate the novel photoelectric-detection device process chart as shown in Figure 7, technology is described in detail as follows:
(1) etching mask figure photoetching
Positive glue 9912, rotating speed 3000rpm, the about 1.4 μ m of thickness;
Need allow the direction of groove along (011) crystal orientation during photoetching, so that deep trouth corrosion both sides are the inclined-plane, as shown in Figure 8, Fig. 8 is a deep trouth etch pattern substrate schematic diagram;
(2) deep trouth corrosion
HCl: H
2O
2: H
2O=1: 4: 40, corroded the about 30 μ m of the degree of depth 2 hours;
H
2SO
4: H
2O=5: 1 solution reprocessing 2 minutes;
(3) epitaxial material growth
Use MOCVD epitaxial growth PIN material for detector structure, as shown in Figure 9, Fig. 9 is detector epitaxial material structure figure, comprising: resilient coating 901, n type ohmic contact layer 902, intrinsic layer 903, anti-reflecting layer 904, p type ohmic contact layer 905;
(4) light receiving window figure photoetching
Adopt and be inverted the even positive glue 9918 of paint-on technique, rotating speed 3000 changes;
Adopt the photoetching of double exposure developing technique to expose light receiving window 1001;
(5) light receiving window corrosion
Adopt citric acid: H
2O
2=1: 1 corrosion p type ohmic contact layer exposes the anti-reflecting layer 904 in the light receiving window 1001, and as shown in figure 10, Figure 10 is light receiving window corrosion schematic diagram;
(6) p type ohmic metallization
Adopt even glue technology of the inversion similar and re-expose developing technique, make p type metal ohmic contact figure by lithography to (4) step;
Electron beam evaporation Pt/Ti/Pt/Au=200/200/500/2000A;
Metal-stripping forms p electrode 1101, and as shown in figure 11, Figure 11 is a p type ohmic contact schematic diagram;
(7) thinning back side
Adopt mechanical lapping and chemical etch polishing in conjunction with substrate thinning to the 100-150 micron;
(8) back side ohmic metallization
Back side electron beam evaporation Au/GeNi alloy, the about 3500A of thickness, metal-stripping;
Rapid thermal annealing is 50 seconds under 400 degree high temperature, and ohmic contact alloy forms back electrode 1201, and as shown in figure 12, Figure 12 is a n type back electrode schematic diagram;
(9) scribing
Scribing is divided into the independently photodetector of inclined-plane reception, and as shown in figure 13, Figure 13 is that the inclined-plane receives the photodetector schematic diagram;
(2) use SI type GaAs substrate to be that with the main distinction of the novel photoelectric-detection device that uses n type GaAs substrate electrode form is different, two electrode all is positioned at the upper surface of substrate 1501, and the electrode of n type GaAs foundation light electric explorer lays respectively at the upper and lower surface of substrate 301.The manufacturing process flow diagram of SIGaAs foundation light electric explorer as shown in figure 14, its (1)～(5) step process is identical with said n type GaAs foundation light electric explorer, main difference is the preparation and the isolation of upper surface bipolar electrode, and the manufacturing process of SI GaAs foundation light electric explorer is described in detail as follows:
(1)～(5) identical with the process of employing in ();
(6) isolate mesa etch
Adopt even glue technology of the inversion similar and re-expose developing technique, make n type ohmic contact table top 1503 by lithography, adopt citric acid: H to (4) step
2O
2=1: 1 corrosion n type ohmic contact table top is to semi-insulating substrate;
Adopt even glue technology of the inversion similar and re-expose developing technique, make p type ohmic contact table top 1502 by lithography, adopt citric acid: H to (4) step
2O
2=1: 1 corrosion p type ohmic contact table top is to n type ohmic contact layer;
The mesa-isolated schematic diagram as shown in figure 15, Figure 15 is the mesa-isolated schematic diagram;
(7) medium passivation
Adopt PECVD method somatomedin passivation layer 1601, it can be anti-reflecting layer, and this moment, thickness equaled 1/4th of operation wavelength in the medium, or common passivation dielectric layer, thickness does not have specific (special) requirements, but needs etching to remove in the contact window etch step, to expose the light-receiving window;
This dielectric passivation layer plays the effect of passivation insulation blocking simultaneously again, and protection device is isolated p type and n type ohmic contact;
(8) contact window etching
Adopt even glue technology of the inversion similar to (4) step and re-expose developing technique, make p type ohmic contact window 1602 and n type ohmic contact window 1603 by lithography, as shown in figure 16, Figure 16 is medium passivation and contact window etching schematic diagram; If dielectric passivation is common passivation protection effect, then need to make by lithography simultaneously light-receiving window 1001;
(9) p type ohmic metallization
Adopt even glue technology of the inversion similar and re-expose developing technique, make p type ohmic contact figure by lithography, electron beam evaporation Pt/Ti/Pt/Au=200/200/500/2000A to (4) step;
Metal-stripping forms p electrode 1701, and as shown in figure 17, Figure 17 is p type and n type ohmic metallization schematic diagram;
(10) n type ohmic metallization
Adopt even glue technology of the inversion similar and re-expose developing technique, make n type ohmic contact figure by lithography, electron beam evaporation Au/GeNi alloy, the about 3500A of thickness, metal-stripping to (4) step;
Rapid thermal annealing is 50 seconds under 400 degree high temperature, and ohmic contact alloy forms n electrode 1702, and as shown in figure 17, Figure 17 is p type and n type ohmic metallization schematic diagram;
Section A-A schematic diagram on the inclined-plane of SI GaAs foundation light electric explorer as shown in figure 18, Figure 18 is the schematic cross-section of SI GaAs foundation light electric explorer;
(11) thinning back side is identical with the process of employing in () with (12) scribing, obtain the photodetector that the inclined-plane on the SI GaAs substrate receives through attenuate and scribing, as shown in figure 19, Figure 19 receives photodetector (SI type GaAs substrate) schematic diagram for the inclined-plane.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. one kind receives the manufacture method that active area is positioned at the photodetector on the inclined-plane, it is characterized in that, this method comprises:
On Semiconductor substrate, make etching mask, use isotropic corrosive liquid that substrate is polished, remove the defective on surface, and then carry out anisotropic deep trouth corrosion; H is used in the corrosion back
2SO
4: H
2O=5: 1 solution polishing inclined-plane, remove the reaction residual particles that generates in the corrosion process, form high step cutting pattern substrate;
On the high step cutting pattern substrate that forms, adopt molecular beam epitaxy MBE or metal organic chemical vapor deposition MOCVD method, grown buffer layer, n type ohmic contact layer, intrinsic layer, anti-reflecting layer and p type ohmic contact layer successively;
Carry out the microelectronic technique manufacturing finishing on the epitaxially grown high step cutting pattern substrate, form and receive active area and be positioned at photodetector on the inclined-plane.
2. reception active area according to claim 1 is positioned at the manufacture method of the photodetector on the inclined-plane, it is characterized in that,
Described Semiconductor substrate is a n type GaAs substrate, or is SI type GaAs substrate;
Described etching mask is the photoresist mask, or is the medium mask;
Described isotropic corrosive liquid is H
2SO
4: H
2O
2: H
2O, solution ratio are 3: 1: 1, and corrosion rate is 5 μ m/min;
Described carrying out adopted anisotropic wet etching solution when anisotropic deep trouth corrodes, and this anisotropic wet etching solution adopts the etchant solution of any proportioning in following three kinds of proportionings: H
3PO
4: H
2O
2: H
2O=3: 4: 12, H
2SO
4: H
2O
2: H
2O=1: 8: 80 or HCl: H
2O
2: H
2O=1: 4: 40.
3. reception active area according to claim 1 is positioned at the manufacture method of the photodetector on the inclined-plane, it is characterized in that, and is described in carrying out the epitaxially grown process of material for detector structure, adopts growth interruption technology and monolayer growing technology.
4. reception active area according to claim 1 is positioned at the manufacture method of the photodetector on the inclined-plane, it is characterized in that, described Semiconductor substrate is a n type GaAs substrate, or is SI type GaAs substrate;
For n type GaAs substrate, describedly comprise finishing the step of carrying out the microelectronic technique manufacturing on the epitaxially grown high step cutting pattern substrate: the photoetching of etching mask figure, the growth of deep trouth burn into epitaxial material, the photoetching of light receiving window figure, light receiving window burn into p type ohmic metallization, thinning back side, back side ohmic metallization, scribing;
For SI type GaAs substrate, describedly comprise finishing the step of carrying out the microelectronic technique manufacturing on the epitaxially grown high step cutting pattern substrate: the photoetching of etching mask figure, the growth of deep trouth burn into epitaxial material, the photoetching of light receiving window figure, light receiving window burn into are isolated mesa etch, medium passivation, contact window etching, p type ohmic metallization, n type ohmic metallization, thinning back side, scribing.
5. reception active area according to claim 4 is positioned at the manufacture method of the photodetector on the inclined-plane, it is characterized in that, adopt electron beam evaporation Pt/Ti/Pt/Au to realize that the thickness of Pt/Ti/Pt/Au is 200/200/500/2000A in the step of described p type ohmic metallization; Adopt electron beam evaporation Au/GeNi to realize that the thickness of Au/GeNi is 3500A in the step of described n electrode metalization.
6. reception active area according to claim 5 is positioned at the manufacture method of the photodetector on the inclined-plane, it is characterized in that, adopt quick ohmic contact alloy technology during described ohmic metallization, the condition of this quick ohmic contact alloy technology is: 400 degree, 50 seconds.
7. reception active area according to claim 4 is positioned at the manufacture method of the photodetector on the inclined-plane, it is characterized in that, for SI type GaAs substrate, the step medium of described medium passivation is as anti-reflective film, thickness be in the medium operation wavelength 1/4th, in the dielectric etch technology of back, do not need etching light-receiving window medium; Perhaps
Medium is as common passivation protection layer, and thickness does not have specific (special) requirements, but needs to etch light-receiving window medium in the dielectric etch technology of back.
8. reception active area according to claim 1 is positioned at the manufacture method of the photodetector on the inclined-plane, it is characterized in that, describedly carry out the step that microelectronic technique is made on the epitaxially grown high step cutting pattern substrate finishing, adopt the re-expose technology of photoresist in the photoresist paint-on technique of high step cutting pattern substrate and the deep trouth;
Even gluing method of two steps and the even gluing method of inversion that the photoresist painting method of described high step cutting pattern substrate, employing rotation center misplace mutually and separate obtain uniform photoresist and cover;
The re-expose technology of photoresist in the described deep trouth is exposed at twice, is developed and removes the interior photoresist of deep trouth, reduces the total time of exposing and needing.
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| CN113328013A (en) * | 2020-02-28 | 2021-08-31 | 山东浪潮华光光电子股份有限公司 | Preparation method of high-brightness infrared light emitting diode core and diode core |
| CN116943983B (en) * | 2023-06-13 | 2024-04-02 | 武汉敏芯半导体股份有限公司 | Wafer gluing device and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1141511A (en) * | 1995-05-12 | 1997-01-29 | 富士通株式会社 | Integrated optical module including waveguide and photoreception device |
| US7031360B2 (en) * | 2002-02-12 | 2006-04-18 | Nl Nanosemiconductor Gmbh | Tilted cavity semiconductor laser (TCSL) and method of making same |
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2007
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1141511A (en) * | 1995-05-12 | 1997-01-29 | 富士通株式会社 | Integrated optical module including waveguide and photoreception device |
| US7031360B2 (en) * | 2002-02-12 | 2006-04-18 | Nl Nanosemiconductor Gmbh | Tilted cavity semiconductor laser (TCSL) and method of making same |
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| JP特开平6-296007A 1994.10.21 |
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