CN1034074A - 在玻璃衬底上形成的薄膜图形结构 - Google Patents

在玻璃衬底上形成的薄膜图形结构 Download PDF

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CN1034074A
CN1034074A CN89100120A CN89100120A CN1034074A CN 1034074 A CN1034074 A CN 1034074A CN 89100120 A CN89100120 A CN 89100120A CN 89100120 A CN89100120 A CN 89100120A CN 1034074 A CN1034074 A CN 1034074A
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山崎舜平
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Abstract

一种导电图形，用激光划割法形成在适用于液晶 器件的钠钙玻璃衬底上。除了第一离子阻挡薄膜插 在玻璃衬底和导电图形之间外，还在结构上设有一第 二离子阻挡薄膜，以便在进行激光划割期间，禁止钠 离子从衬底通过第一离子阻挡薄膜中形成的图形和 构成图形的导电薄膜漂移出来。

Description

本发明涉及一种薄膜图形结构，而特别（尽管不是专门地）涉及一种用激光划割法在玻璃衬底上制成的薄膜图形。
光刻法是一种用以在衬底上形成的薄膜中产生图形的已知技术。这种技术顾及除去待处理薄膜的部分而不引起下垫面损伤的需要，是方便和有益的。但是，根据这种方法必需用相当数目的步骤来完成构图工序。换句话说，待处理的薄膜在衬底上形成以后，再涂一层光刻胶膜且被构成图形，该薄膜通过有图形的光刻胶膜作为掩模浸以腐蚀剂，然后将光刻胶膜除去。
激光划割技术作为能以高速进行划割的一种低成本构图方法，在本技术领域是已知的。钇铝石榴石激光器（红外光，1.06微米）是一种为这个目的而已被广泛应用的具有代表性的激光器。但是，因为这种激光器的光能只有1.23电子伏特，具有大约为3至4电子伏特的光能隙的氧化锡、氧化铟（或ITO）、氧化锌等是不能由钇铝石榴石激光器来有效地处理的，而透明的导电氧化物（CTO）薄膜一般是这类物质制成的。
申请人曾经提出过使用准分子激光器以便发射脉冲型的激光束用以对透明的导电薄膜进行激光划割。激光束的波长不宽于400毫微米相当于高于3.1电子伏特的光子能量。但是，这种激光划割法有一缺点。当部分透明导电薄膜形成在钠玻璃衬底上时，为了在上面产生电极图形，它们之间的一层离子阻挡薄膜要除去，该离子阻挡薄膜和该玻璃衬底一起被部分地消除，因此玻璃衬底的表面被暴露出来。最后，在液晶器件加工的情况下，包含在器件中的液晶材料被从玻璃衬底引入的钠离子所污染。而且，划割使其上表面不平和残渣留在除去的部分的边上，该残渣堆积成0.5至1微米那么高。不平度不仅对于应用液晶器件而且对于一般电器件的包括压合工序的制造过程都是不希望有的。不平的表面可能会在不同层次的叠片之间引起电气短路和会使叠加在上面的电气图形断开。
本发明的一个目的是提供一种在玻璃衬底上形成的薄膜图形，以便小的污染物质从衬底漏出。
根据一个最佳实施例，图形是用一种脉冲型激光束蚀刻的，该激光束的波长不长于400毫微米，再在该蚀刻的部分覆盖以一层离子阻挡薄膜。
图1是说明根据本发明用于激光制作布线图案的一种激光划割装置的示意图。
图2（A）至2（D）是一些根据本发明的以剖面图方式表示激光束成形成工序的说明性视图。
图3（A）至3（D）是一些说明根据本发明的薄膜制造工序的剖面图。
现参阅图1所示的根据本发明的激光划割装置。该激光装置是由一氟化氪准分子激光器14（波长＝248毫微米，能隙＝5.0电子伏特，效率＝3%，输出能量＝350毫焦耳）、一光束扩展器15、一掩模16、一由合成石英制成的圆柱形凸透镜17和一衬底架10组成。衬底架10适宜于如图所见到的在垂直方向移动，以便改变安装在上面的钠钙玻璃衬底1的位置。形成在衬底1上的是厚度为100至1500埃、例如200埃的由含有非常少量的磷、钠和硼的氧化硅组成的离子阻挡薄膜2，以及在其上面的厚度为1000至3000埃由ITO、氧化锡、氧化锌组成的透明导电薄膜或一叠片。该透明导电薄膜4可以设有铬或钼薄膜涂层。根据这情况，必要时可以在导电薄膜的下面或上面形成一绝缘的或半导体薄膜。
如图2（A）所示，激光束21的高度和宽度在从准分子激光器发射出来后恰为16毫米和20毫米。这激光束21通过光束扩展器被扩展成具有如图2（B）所示的300毫米宽，而其高度维持不变。扩展后，能量密度变成5.6×10-2毫焦耳/毫米2。该扩展后的光束22然后用掩模16将其周围阻挡，以便使其高度成为2毫米，如图2（C）所示。对扩展后的激光束的周围部分进行除去，目的是为了减小后面的透镜17引起的象差效应。扁平激光束24通过妇?7被缩小和聚焦在衬底1的表面上，如图1和图2（D）所示。在衬底1的表面处激光束的高度为10微米。实际上，在衬底上要形成的槽其宽度可以在2微米至200微米的范围内，例如为50微米、20微米、10微米、5微米和3微米，根据用途而定。
激光束以脉冲方式重复地投射在衬底1上。脉冲的持续时间为20毫微秒和频率为1-100赫，例如10赫。于是，形成了槽6-1、6-2、……，如图3（B）所示。相邻的槽之间的距离为2微米。残渣5被留在槽的周围和内部，如图3（B）所示。残渣用一种酸，例如氢氟酸（用水按1/10稀释）或用一种例如酸性的氟化氨的氟溶液混合物来选择地除去，然后用丙酮和纯水进行超声清洗，如图3（C）所示。但是，在这结构中恰在槽下面的玻璃衬底的上面部分（0.3-1.0微米深）也被除去，而最后玻璃衬底的表面通过槽被暴露出来。
如果图3（C）中所示的结构用来制造液晶器件，当经受长时间使用时，需要高纯度的液晶材料被从钠钙衬底进入的钠离子所污染。同样，如果被用作图象传感器的衬底、太阳能电池等，非晶半导体薄膜被钠离子污染，结果使光电变换能力降低和将半导体改变成n型半导体。
为了避免不希望的受钠离子污染，在衬底1上形成一第二离子阻挡薄膜8盖住槽。第二离子阻挡薄膜的形成是通过涂以诸如聚酰亚胺的有机树脂或例如氧化硅的无机树脂实现的。它们最好以先质流体的方式（非聚合状态或例如硅氮烷的有机硅液态化合物）首先涂在衬底上。旋涂器可用于涂覆。另一方面，可以用网板压印技术、喷涂技术或其他涂覆方法来代替。先质薄膜的厚度为50-2500埃，例如在导电薄膜上的厚度为300埃，在槽内的厚度为500埃。该先质薄膜被热固化。例如，在聚酰亚胺溶液的情况下，薄膜在230℃温度下加热两小时。在有机硅液态化合物的情况下，薄膜通过热处理被转变为由固态氧化硅组成的阻挡薄膜。应该注意的是，根据上述的涂覆方法，槽内第二阻挡薄膜的厚度大于透明导电薄膜4上第二阻挡薄膜的厚度。举例来说，当第二阻挡薄膜在导电薄膜上形成至厚度为50-300埃时，在槽底部上形成的厚度变成100-600埃。因为这样的厚度，可有效地阻止离子通过第二阻挡薄膜漂移。理论上，需要完全填充槽，以使上表面平坦。关于这一点，最好采用液态先质。特别是，为了填充狭的槽，大的表面张力是有利的。
由有机材料组成的第二阻挡薄膜，当一液晶显示器用此构成时可以用作定向控制薄膜。给薄膜的表面进行磨光处理。根据实验，显示图象的对比度测定为20且甚至在50℃温度下使用100小时后也降低很少。通过在各槽两端加50伏的直流电压可检验漏电流。这种检验是横跨100个槽且长度为30厘米和宽为10微米的情况下进行的。结果，所有的漏电流是在1×10-9安至2×10-9安的范围内。
当数个实施例逐一叙述过后，可以体会到本发明不限于所述的特定实例，而在不偏离由所附权利要求书所限定的本发明的范围的情况下可以作出改进和变更。实例如下：
构成滤色器的绝缘薄膜可以在透明导电薄膜的下面或上面整体地形成。
虽然导电薄膜是由例如ITO、二氧化硅或氧化锌薄膜的透明导电材料制成，一种例如铬或钼的金属薄膜也能以同样的方式使用。
一种图象传感器能通过在透明导电薄膜上叠加一非晶硅半导体薄膜而构成，并用对置的电极装置掩盖半导体薄膜。
虽然根据最佳实施例，槽与剩余的透明导电薄膜相比是狭的，20微米宽的狭条可以通过使用一串脉冲留在400微米宽的除去的部分之间，该串脉冲顺序地投射，而衬底逐渐地移动少许。

Claims (15)

1、一种薄膜图形结构，其特征在于，该结构包括：
一玻璃衬底；
在所述玻璃衬底上形成的第一离子阻挡薄膜；
在所述第一离子阻挡薄膜上形成的一导电薄膜；
部分的所述第一离子阻挡薄膜和所述导电薄膜根据一规定的图形在整个厚度上被整体地除去；以及
在所述玻璃衬底的被去掉所述第一离子阻挡薄膜和所述导电薄膜的，通过在所述第一离子阻挡薄膜和所述导电薄膜中所形成的图形而暴露出来表面部分上形成的一第二离子阻挡薄膜。
2、根据权利要求1所述的结构，其特征在于，其中所述玻璃衬底是由钠钙玻璃组成的。
3、根据权利要求2所述的结构，其特征在于，其中所述第二离子阻挡薄膜是由聚酰亚胺组成的。
4、根据权利要求2所述的结构，其特征在于，其中所述第二离子阻挡薄膜是由氧化硅组成的。
5、根据权利要求2所述的结构，其特征在于，其中所述导电薄膜是由导电的透明材料组成的。
6、根据权利要求5所述的结构，其特征在于，其中所述导电的透明材料是氧化锡、氧化铟、氧化锌或ITO。
7、根据权利要求1所述的结构，其特征在于，其中所述导电薄膜上的所述第二离子阻挡薄膜的厚度大于所述衬底表面上的所述第二离子阻挡薄膜的厚度。
8、一种在玻璃衬底上形成的薄膜中产生图形的方法，其特征在于，该方法包括下列步骤：
在所述衬底上形成一第一离子阻挡层;
在所述第一离子阻挡薄膜上形成一导电薄膜;
根据一规定的图形除去所述第一离子阻挡薄膜和所述导电薄膜，旨在使所述衬底上相应表面部分通过它们而被暴露出来;以及
在所述第一离子阻挡薄膜上形成一第二阻挡薄膜盖住所述衬底的暴露出来的表面部分。
9、根据权利要求8所述的方法，其特征在于，其中所述除去步骤用激光划割法进行。
10、根据权利要求9所述的方法，其特征在于，其中所述激光划割法是用准分子激光器进行的。
11、根据权利要求10所述的方法，其特征在于，其中所述激光划割法用的激光射线的波长不长于400毫微米。
12、根据权利要求9所述的方法，其特征在于，还包括在除去所述第一离子阻挡薄膜和所述导电薄膜后除去留下的残渣的步骤。
13、根据权利要求12所述的方法，其特征在于，其中所述残渣除去步骤是通过使用氢氟酸进行的。
14、根据权利要求8所述的方法，其特征在于，其中所述第二离子阻挡薄膜步骤是通过施加一种将成为第二离子阻挡薄膜的材料的液态先质且将其热处理实现的。
15、根据权利要求8所述的方法，其特征在于，该方法适宜于制造用于液晶器件的图形。
CN89100120A 1988-01-06 1989-01-06 在玻璃衬底上形成的薄膜图形结构及该图结构形成方法 Expired - Fee Related CN1025247C (zh)

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JP63001576A JPH0645483B2 (ja) 1988-01-06 1988-01-06 液晶表示装置用基板およびその作製方法
JP63001578A JP2587972B2 (ja) 1988-01-06 1988-01-06 薄膜構造
JP63001577A JP2587971B2 (ja) 1988-01-06 1988-01-06 薄膜形成方法

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