DE68909620T2 - Dünnschichtmusterstruktur. - Google Patents

Dünnschichtmusterstruktur.

Info

Publication number
DE68909620T2
DE68909620T2 DE1989609620 DE68909620T DE68909620T2 DE 68909620 T2 DE68909620 T2 DE 68909620T2 DE 1989609620 DE1989609620 DE 1989609620 DE 68909620 T DE68909620 T DE 68909620T DE 68909620 T2 DE68909620 T2 DE 68909620T2
Authority
DE
Germany
Prior art keywords
thin film
film pattern
pattern structure
thin
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1989609620
Other languages
English (en)
Other versions
DE68909620D1 (de
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63001577A external-priority patent/JP2587971B2/ja
Priority claimed from JP63001576A external-priority patent/JPH0645483B2/ja
Priority claimed from JP63001578A external-priority patent/JP2587972B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE68909620D1 publication Critical patent/DE68909620D1/de
Application granted granted Critical
Publication of DE68909620T2 publication Critical patent/DE68909620T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
DE1989609620 1988-01-06 1989-01-06 Dünnschichtmusterstruktur. Expired - Fee Related DE68909620T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63001577A JP2587971B2 (ja) 1988-01-06 1988-01-06 薄膜形成方法
JP63001576A JPH0645483B2 (ja) 1988-01-06 1988-01-06 液晶表示装置用基板およびその作製方法
JP63001578A JP2587972B2 (ja) 1988-01-06 1988-01-06 薄膜構造

Publications (2)

Publication Number Publication Date
DE68909620D1 DE68909620D1 (de) 1993-11-11
DE68909620T2 true DE68909620T2 (de) 1994-02-10

Family

ID=27274979

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1989609620 Expired - Fee Related DE68909620T2 (de) 1988-01-06 1989-01-06 Dünnschichtmusterstruktur.

Country Status (4)

Country Link
US (1) US4937129A (de)
EP (1) EP0324550B1 (de)
CN (1) CN1025247C (de)
DE (1) DE68909620T2 (de)

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US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6261856B1 (en) * 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
GB2250623B (en) * 1990-12-03 1994-06-15 Marconi Gec Ltd Display devices
US5432015A (en) * 1992-05-08 1995-07-11 Westaim Technologies, Inc. Electroluminescent laminate with thick film dielectric
US5532089A (en) * 1993-12-23 1996-07-02 International Business Machines Corporation Simplified fabrication methods for rim phase-shift masks
US5465859A (en) * 1994-04-28 1995-11-14 International Business Machines Corporation Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique
US5961852A (en) * 1997-09-09 1999-10-05 Optical Coating Laboratory, Inc. Laser scribe and break process
US6379509B2 (en) 1998-01-20 2002-04-30 3M Innovative Properties Company Process for forming electrodes
JP3497722B2 (ja) * 1998-02-27 2004-02-16 富士通株式会社 半導体装置及びその製造方法及びその搬送トレイ
EP1104030A3 (de) * 1999-11-29 2001-09-05 SANYO ELECTRIC Co., Ltd. Herstellungsverfahren für ein photovoltaisches Bauelement
US6410968B1 (en) * 2000-08-31 2002-06-25 Micron Technology, Inc. Semiconductor device with barrier layer
US20050083460A1 (en) * 2001-07-16 2005-04-21 Nippon Sheet Glass Co., Ltd. Semi-transmitting mirror-possessing substrate, and semi-transmitting type liquid crystal display apparatus
US7514149B2 (en) * 2003-04-04 2009-04-07 Corning Incorporated High-strength laminated sheet for optical applications
US7492028B2 (en) * 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7943287B2 (en) * 2006-07-28 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
KR101346246B1 (ko) 2006-08-24 2013-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 제작방법
US8563431B2 (en) * 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7795154B2 (en) * 2006-08-25 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device that uses laser ablation, to selectively remove one or more material layers
US7651896B2 (en) 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5110830B2 (ja) * 2006-08-31 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7960261B2 (en) * 2007-03-23 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
US8673163B2 (en) 2008-06-27 2014-03-18 Apple Inc. Method for fabricating thin sheets of glass
US7810355B2 (en) 2008-06-30 2010-10-12 Apple Inc. Full perimeter chemical strengthening of substrates
CN102388003B (zh) 2009-03-02 2014-11-19 苹果公司 用于强化用于便携式电子设备的玻璃盖的技术
US20110019354A1 (en) * 2009-03-02 2011-01-27 Christopher Prest Techniques for Strengthening Glass Covers for Portable Electronic Devices
CN102176996B (zh) * 2009-10-07 2015-09-09 综合制造科技有限公司 激光刻划薄膜太阳能电池面板
US9778685B2 (en) 2011-05-04 2017-10-03 Apple Inc. Housing for portable electronic device with reduced border region
US9213451B2 (en) 2010-06-04 2015-12-15 Apple Inc. Thin glass for touch panel sensors and methods therefor
US10189743B2 (en) 2010-08-18 2019-01-29 Apple Inc. Enhanced strengthening of glass
US8873028B2 (en) 2010-08-26 2014-10-28 Apple Inc. Non-destructive stress profile determination in chemically tempered glass
US8824140B2 (en) 2010-09-17 2014-09-02 Apple Inc. Glass enclosure
US10781135B2 (en) * 2011-03-16 2020-09-22 Apple Inc. Strengthening variable thickness glass
US9725359B2 (en) 2011-03-16 2017-08-08 Apple Inc. Electronic device having selectively strengthened glass
US9128666B2 (en) 2011-05-04 2015-09-08 Apple Inc. Housing for portable electronic device with reduced border region
US9944554B2 (en) 2011-09-15 2018-04-17 Apple Inc. Perforated mother sheet for partial edge chemical strengthening and method therefor
US9516149B2 (en) 2011-09-29 2016-12-06 Apple Inc. Multi-layer transparent structures for electronic device housings
CN103094399A (zh) * 2011-10-27 2013-05-08 吉富新能源科技(上海)有限公司 降低薄膜太阳能串联电阻的方法
US10144669B2 (en) 2011-11-21 2018-12-04 Apple Inc. Self-optimizing chemical strengthening bath for glass
US8684613B2 (en) 2012-01-10 2014-04-01 Apple Inc. Integrated camera window
US10133156B2 (en) 2012-01-10 2018-11-20 Apple Inc. Fused opaque and clear glass for camera or display window
US8773848B2 (en) 2012-01-25 2014-07-08 Apple Inc. Fused glass device housings
US9946302B2 (en) 2012-09-19 2018-04-17 Apple Inc. Exposed glass article with inner recessed area for portable electronic device housing
US9459661B2 (en) 2013-06-19 2016-10-04 Apple Inc. Camouflaged openings in electronic device housings
US9886062B2 (en) 2014-02-28 2018-02-06 Apple Inc. Exposed glass article with enhanced stiffness for portable electronic device housing
CN105652526B (zh) * 2014-11-12 2018-12-14 群创光电股份有限公司 显示面板
WO2017062423A1 (en) * 2015-10-07 2017-04-13 Corning Incorporated Method of laser preparation of a coated substrate to be laser cut
CN109922962B (zh) * 2016-11-11 2021-04-27 株式会社Lg化学 大面积液晶装置的图案的形成方法

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FR2254081A1 (en) * 1973-12-06 1975-07-04 Ibm Electro-optical indicating device - with two support layers, two electrode planes, liquid crystal layer, and dielectric layers
JPS5495264A (en) * 1978-01-11 1979-07-27 Hitachi Ltd Liquid crystal display element
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US4842629A (en) * 1986-12-01 1989-06-27 Siemens Aktiengesellschaft Method for producing buried regions of raised refractive index in a glass member by ion exchange

Also Published As

Publication number Publication date
DE68909620D1 (de) 1993-11-11
US4937129A (en) 1990-06-26
CN1034074A (zh) 1989-07-19
EP0324550B1 (de) 1993-10-06
EP0324550A1 (de) 1989-07-19
CN1025247C (zh) 1994-06-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee