CN103403866A - High-frequency module - Google Patents

High-frequency module Download PDF

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Publication number
CN103403866A
CN103403866A CN201280010496XA CN201280010496A CN103403866A CN 103403866 A CN103403866 A CN 103403866A CN 201280010496X A CN201280010496X A CN 201280010496XA CN 201280010496 A CN201280010496 A CN 201280010496A CN 103403866 A CN103403866 A CN 103403866A
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China
Prior art keywords
switch
weld pad
pad electrode
electrode
substrate
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Granted
Application number
CN201280010496XA
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Chinese (zh)
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CN103403866B (en
Inventor
奥田修功
金荣昌明
早坂直树
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Publication of CN103403866A publication Critical patent/CN103403866A/en
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Publication of CN103403866B publication Critical patent/CN103403866B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002—Switching arrangements with several input- or output terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Transceivers (AREA)
  • Electronic Switches (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Abstract

In a simple and compact form, the invention creates a high-frequency module provided with a switch circuit that, from one balanced terminal, switches to and connects to one of multiple balanced terminals. The high-frequency module (100) is provided with switch IC elements (SW-, SW+) and a substrate (101). The switch IC elements (SW-, SW+) are the same IC chip, and are mounted in the same orientation. Switch IC element (SW-) is mounted on the substrate (101). Switch IC element (SW+) is mounted on switch IC element (SW-). Each pad electrode of the switch IC elements (SW-, SW+) is connected by means of wire bonding to a land electrode to be connected to said pad electrode, said land electrode being of the substrate (101). No other land electrode is provided between each mutually connected pad electrode and land electrode.

Description

High-frequency model
Technical field
The present invention relates to a kind of high-frequency model that one group of balanced terminals switching is connected in to the switching circuit of many group balanced terminals that possesses.
Background technology
In communicating terminal etc., miniaturization is making progress, and with the single circuit element, processes sometimes the signal of a plurality of systems.In addition, in order to realize this, process, the signal that switches a plurality of systems the method that these systems is inputed to public circuit element are arranged.At this moment, the signal of each system switches and is input to public circuit element by switch element.
When the signal of each system is balanced signal, as the high-frequency model of patent documentation 1 record, must in each circuit that forms the balanced type circuit, possess switch element herein.In addition, in this kind high-frequency model, generally speaking, on substrate, arrange these switch elements are installed.
The prior art document
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 2001-345653 communique
Summary of the invention
Invent technical problem to be solved
Yet, in existing structure, in order to arrange, each switch element is installed, it is wide that the erection space on substrate becomes.In addition, when a plurality of balanced terminals that switching are connected in to public balanced terminals are unrolled with respect to the past different directions of the face of substrate, as described as the circuit pattern of Fig. 4 of patent documentation 1, the pattern that unrolls of different communication signals is intersected with each other, and the isolation characteristic between communication signal is deteriorated.In addition, when the pattern that makes to unroll is intersected with each other, must be by the pattern design of configured separate etc. on the thickness direction of substrate each other of unrolling, the shape of substrate complicates.
The object of the invention is to realize possessing with simple and small-sized shape any the high-frequency model of switching circuit that a balanced terminals switching is connected in to a plurality of balanced terminals.
The technical scheme of dealing with problems and adopting
High-frequency model of the present invention possesses identical the 1st switch I C and the 2nd switch I C of configuration structure of weld pad electrode.High-frequency model possesses substrate, and this substrate possesses the grounding electrode that is connected in the weld pad electrode and possesses the electrode that the 1st switch I C and the 2nd switch I C is connected to external circuit.The 1st switch I C is installed on substrate.The 2nd switch I C is installed on the 1st switch I C and the face substrate opposition side.The 1st switch I C and the 2nd switch I C are mounted to the weld pad electrode and expose on the face with the substrate-side opposition side.Each weld pad electrode is connected by wire-bonded (wire bonding) with grounding electrode.
In this structure, the 1st switch I C and the 2nd switch I C are installed on substrate under overlapping state, and therefore compared to these the 1st, the 2nd switch I C are arranged and are installed on substrate, erection space diminishes.
In addition, high-frequency model of the present invention is preferably, and the 1st switch I C is identical IC element with the 2nd switch I C.
In this structure, only overlapping a kind of switch I C can realize the switching circuit that balanced signal is used.Therefore, the switch I C compared to design, the new balanced signal of making are used, can realize the switching circuit that balanced signal is used more simply.
In addition, by wire-bonded, connect the 1st, the 2nd switch I C and substrate, can realize being connected of the 1st, the 2nd switch I C and substrate with three dimensional constitution thus.Thus, also can easily realize the wiring pattern that can't realize in two dimensional surface, without on substrate, carrying out wiring intersected with each other etc.
In addition, high-frequency model of the present invention is preferably, specific weld pad electrode with and the specific grounding electrode that is connected of specific weld pad electrode between, configure other grounding electrode different from this specific grounding electrode.
In this structure, each lead-in wire that each weld pad electrode and each grounding electrode to being connected in each weld pad electrode are connected is not respectively intersected.Thus, can be lifted at the isolation between each circuit that connects with each lead-in wire.
In addition, high-frequency model of the present invention is preferably, and the 2nd switch I C is installed on the 1st switch I C and the face substrate opposition side via bonding agent.
In this structure, can engage reliably the 1st switch I C and the 2nd switch I C, and can protect between the 1st switch I C and the 2nd switch I C by bonding agent.
In addition, high-frequency model of the present invention is preferably, and from the direction of the components and parts installed surface quadrature with substrate, observes, and the 1st switch I C and the 2nd switch I C are installed on equidirectional.
In this structure, because the 1st switch I C and the 2nd switch I C are equidirectional, therefore can share the benchmark of alignment mark, installation is easy.In addition, if the 1st switch I C possesses the 1st paired independent terminals that forms balanced terminals described later, the 2nd switch I C possesses the 2nd independent terminals, from the direction of the components and parts installed surface quadrature with substrate, observes, and the 1st independent terminals and the 2nd independent terminals are roughly overlapping.Therefore, while from these the 1st independent terminals and the 2nd independent terminals, applying wire-bonded, forming the balanced type circuit, the design transfiguration of the configuration pattern of the grounding electrode that is connected with the weld pad electrode that forms these independent terminals etc. is easy.
In addition, high-frequency model of the present invention is preferably following structure.The 1st switch I C possesses the 1st independent terminals that forms balanced terminals, and the 2nd switch I C possesses the 2nd independent terminals that forms balanced terminals.To be made as the 1st distance as the 1st weld pad electrode of the 1st independent terminals and the distance of the 1st grounding electrode that is connected in the 1st weld pad electrode by wire-bonded.To be made as the 2nd distance as the 2nd weld pad electrode of the 2nd independent terminals and the distance of the 2nd grounding electrode that is connected in the 2nd weld pad electrode by wire-bonded.And, the 1st the distance with the 2nd the distance about equally.
In this structure, easily make the length of formed the 1st conductive pattern of lead-in wire that connects between the 1st weld pad electrode and the 1st grounding electrode consistent with the length of formed the 2nd conductive pattern of lead-in wire to being connected between the 2nd weld pad electrode and the 2nd grounding electrode.Thus, easily make to form the length of two conductors of balanced type circuit consistent.And, by the equilibrium response of an activation lifting balanced signal.
In addition, high-frequency model of the present invention is preferably following structure.The 3rd weld pad electrode of the 1st switch I C and the 4th weld pad electrode of the 2nd switch I C are configured to roughly overlapping.The 3rd weld pad electrode of the 1st switch I C is connected in the 3rd identical weld pad electrode with the 4th weld pad electrode of the 2nd switch I C.The position that the lead-in wire that connects the 3rd weld pad electrode and the 3rd grounding electrode is connected in to the 3rd grounding electrode is made as the 1st position.The position that the lead-in wire that connects the 4th weld pad electrode and the 3rd grounding electrode is connected in to the 3rd grounding electrode is made as the 2nd position.The 1st position than the 2nd position away from the installation site of the 1st, the 2nd switch I C to substrate.
In this structure, even the 1st switch I C and the 2nd switch I C up and down is overlapping, also can make from the distance of the 3rd weld pad electrode of the 3rd grounding electrode to the 1 switch I C of substrate identical with the distance of the 4th weld pad electrode from the 3rd grounding electrode to the 2 switch I C.Thus, to the 1st overlapping switch I C of up and down and the 2nd switch I C input same signal the time, the sequential that can make to be input to the 1st switch I C disappeared with the time difference of the sequential that is input to the 2nd switch I C.For example, if as described above, with the 1st switch I C and the 2nd switch I C, switch transmitting balance signal, can make the switching sequence of the 1st switch I C consistent accurately with the switching sequence of the 2nd switch I C.
The effect of invention
According to the present invention, can form simple and small-sizedly and possess the high-frequency model that one group of balanced terminals switching is connected in to the switching circuit of many group balanced terminals.
The accompanying drawing explanation
Fig. 1 means the figure of mounting structure of the high-frequency model 100 of embodiment of the present invention 1.
Fig. 2 means the figure that the joint of the high-frequency model 100 of embodiment of the present invention 1 is illustrated.
Fig. 3 is the equivalent circuit diagram of the high-frequency model 100 of embodiment of the present invention 1.
Fig. 4 means the flow chart of processing procedure of the high-frequency model 100 of embodiment of the present invention 1.
Fig. 5 means the figure of mounting structure of the high-frequency model 100A of embodiment of the present invention 2.
Fig. 6 is the equivalent circuit diagram of the high-frequency model 100A of embodiment of the present invention 2.
Embodiment
Illustrate referring to the drawings the high-frequency model of embodiment of the present invention 1.Fig. 1 means the figure of mounting structure of the high-frequency model 100 of embodiment of the present invention 1.The annexation of Fig. 1 (A) expression substrate 101 and switch I C element SW+, the annexation of Fig. 1 (B) expression substrate 101 and switch I C element SW-.Fig. 2 means the figure that the joint of the high-frequency model 100 of embodiment of the present invention 1 is illustrated.Fig. 3 is the equivalent circuit diagram of the high-frequency model 100 of embodiment of the present invention 1.
The high-frequency model 100 of embodiment of the present invention 1 possesses two switch I C element SW-, SW+ and substrate 101.
Switch I C element SW-and switch I C element SW+ are semi-conductive bare chip, are identical appearance shape, same circuits structure.Moreover the structure of switch I C element SW-and switch I C element SW+ and configuration pattern also are connected use with outside weld pad electrode is identical.Switch I C element SW-is equivalent to " the 1st switch I C " of the present invention, and switch I C element SW+ is equivalent to " the 2nd switch I C " of the present invention.In addition,, for the identical appearance shape, the difference in size that produces because of the error on manufacturing can be arranged herein.
Switch I C element SW-, SW+ are so-called SPDT (SinglePole Double Throw: single-pole double throw) switch, with the drive voltage signal VDD from outside, drive, according to control signal CTL, weld pad electrode PT1 (the 1st port) switching is connected in to any of weld pad electrode PT2 (the 2nd port) or weld pad electrode PT3 (the 3rd port).
Pareto diagram with regulation on the 1st interarea of substrate 101 is formed with a plurality of grounding electrode P L1～P L12.A plurality of grounding electrode P L1～P L12, as shown in Figure 1 and Figure 2, schematically form the installation site that surrounds switch I C element SW-, SW+.
More specifically, with following allocation plan case, form a plurality of grounding electrode P L1～P L12.Herein, simple in order to make explanation, in advance substrate 101 being set as overlooking under state is square (square region that in fact, is equivalent to substrate 101).
Roughly, along linking the direction of this 1st square bight 111 (bight of upper left during front view 1) with the 2nd bight 112 (bight of lower-left during front view 1), from the 1st bight 111 sides devices spaced apart successively, with the regulation area, form grounding electrode P L1, grounding electrode P L2, grounding electrode P L3.
Roughly, along the direction that links the 2nd bight 112 and the 3rd bight 113 (bight of bottom right during front view 1), from the 2nd bight 112 sides devices spaced apart successively, with the regulation area, form grounding electrode P L4, grounding electrode P L5, grounding electrode P L6.
Roughly, along the direction that links the 3rd bight 113 and the 4th bight 114 (bight of upper right during front view 1), from the 3rd bight 113 sides devices spaced apart successively, with the regulation area, form grounding electrode P L7, grounding electrode P L8, grounding electrode P L9.
Roughly, along the direction that links the 4th bight 114 and the 1st bight 111, from the 4th bight 114 sides devices spaced apart successively, with the regulation area, form grounding electrode P L10, grounding electrode P L11, grounding electrode P L12.
In addition, on the 1st interarea of substrate 101, arranging a plurality of grounding electrode P that form L1～P L12The substantial middle in the zone that surrounds is equipped with switch I C element SW-.That is, the 1st interarea of substrate 101 becomes the components and parts installed surface of this substrate.The weld pad electrode of switch I C element SW-is mounted to the opposition side towards substrate 101.Switch I C element SW-is arranged on substrate 101 via chip join agent 130.
Switch I C element SW+ is arranged on the weld pad electrode side of switch I C element SW-.The weld pad electrode of switch I C element SW+ is mounted to the opposition side towards switch I C element SW-and substrate 101.Switch I C element SW+ is arranged on switch I C element SW-via nude film film 120.
Switch I C element SW-, SW+ possess weld pad electrode PT1, PT2, PT3, PG, PVD, PCT.Weld pad electrode PCT be configured in switch I C element SW-, SW+ bight 121 near.Weld pad electrode PVD be configured in switch I C element SW-, SW+ bight 122 near.Weld pad electrode PT1 is configured between weld pad electrode PCT and weld pad electrode PVD.That is, weld pad electrode PT1 is configured in the assigned position of centre on limit in the link bight 121,122 of switch I C element SW-, SW+.Weld pad electrode PT3 be configured in switch I C element SW-, SW+ bight 123 near.121De diagonal angle, 123Wei bight, bight.Weld pad electrode PT2 be configured in switch I C element SW-, SW+ bight 124 near.122De diagonal angle, 124Wei bight, bight.
Weld pad electrode PG is configured between weld pad electrode PT3 and weld pad electrode PT2.That is, weld pad electrode PG is configured in the assigned position of centre on limit in the link bight 123,124 of switch I C element SW-, SW+.
Switch I C element SW-and switch I C element SW+ for the configuration structure by above-mentioned weld pad electrode forms, observe from the direction of the components and parts installed surface quadrature with substrate 101, as one man is arranged on equidirectional.Moreover at this moment, the 111Ce， bight, bight 123 that the bight 121 of switch I C element SW-, SW+ becomes substrate 101 becomes bight 113 sides of substrate 101.
The weld pad electrode PT1 of switch element SW-is by the conductivity 915 grounding electrode P that are connected in substrate 101 that go between L3.The weld pad electrode PT2 of switch element SW-is by the conductivity 911 grounding electrode P that are connected in substrate 101 that go between L9.The weld pad electrode PT3 of switch element SW-is by the conductivity 913 grounding electrode P that are connected in substrate 101 that go between L5.The weld pad electrode PG of switch element SW-is by the conductivity 912 grounding electrode P that are connected in substrate 101 that go between L8.The weld pad electrode PVD of switch element SW-is by the conductivity 914 grounding electrode P that are connected in substrate 101 that go between L4.The weld pad electrode PCT of switch element SW-is by the conductivity 916 grounding electrode P that are connected in substrate 101 that go between L12.
The weld pad electrode PT1 of switch element SW+ is by the conductivity 925 grounding electrode P that are connected in substrate 101 that go between L1.The weld pad electrode PT2 of switch element SW+ is by the conductivity 921 grounding electrode P that are connected in substrate 101 that go between L11.The weld pad electrode PT3 of switch element SW+ is by the conductivity 923 grounding electrode P that are connected in substrate 101 that go between L7.The weld pad electrode PG of switch element SW+ is by the conductivity 922 grounding electrode P that are connected in substrate 101 that go between L8.The weld pad electrode PVD of switch element SW+ is by the conductivity 924 grounding electrode P that are connected in substrate 101 that go between L4.The weld pad electrode PCT of switch element SW+ is by the conductivity 926 grounding electrode P that are connected in substrate 101 that go between L12.
Via above structure, can realize the high-frequency model 100 that is formed by equivalent circuit structure shown in Figure 3.For this high-frequency model 100, the weld pad electrode PT1 of switch I C element SW-of usining optionally is connected in and usings the weld pad electrode PT2 of switch I C element SW-, SW+ as the 2nd right balanced terminals of independent terminals or using the weld pad electrode PT3 of switch I C element SW-, SW+ as any of the 3rd right balanced terminals of independent terminals as the 1st balanced terminals of the 2nd independent terminals as the 1st independent terminals and the weld pad electrode PT1 of switch I C element SW+ of usining.
From being connected in grounding electrode P L1External connection terminals P1+ be connected in grounding electrode P L3The balanced signal of external connection terminals P1-input be input to the 1st balanced terminals that the weld pad electrode PT1 by switch I C element SW+, SW-forms.By via grounding electrode P L4, the drive voltage signal VDD that applies of weld pad electrode PVD provides power supply to switch I C element SW+, SW-, according to via grounding electrode P L12, the switch-over control signal CTL that applies of weld pad electrode PCT carries out switching controls.
For the balanced signal that inputs to the 1st balanced terminals, by switch I C element SW+, SW-, switch its connection status, export it to the 2nd balanced terminals or the 3rd balanced terminals.From the balanced signal of the 2nd balanced terminals output via grounding electrode P L11, P L9From external connection terminals P2+, P2-, export external circuit to.From the balanced signal of the 3rd balanced terminals output via grounding electrode P L7, P L5From external connection terminals P3+, P3-, export external circuit to.
In addition, the high-frequency model 100 of said structure can obtain the following effects effect.
If by by the overlapping components and parts installed surface that is installed on substrate 101 of switch I C element SW-, SW+, thereby with two switch I C elements, form the switching circuit of balanced signal, erection space is diminished.
Under above-mentioned configuration structure, if switch I C element SW-, SW+ are installed on to substrate 101, while from the direction of the components and parts installed surface quadrature with substrate 101, observing, approaching with grounding electrode by the go between weld pad electrode that connects of conductivity, between these electrodes, do not configure other weld pad electrode or grounding electrode.
For example, the weld pad electrode PT1 of switch I C element SW+ and grounding electrode P L1Approach, between them, do not configure other weld pad electrode or grounding electrode.Similarly, the weld pad electrode PT1 of switch I C element SW-and grounding electrode P L3Approach, between them, do not configure other weld pad electrode or grounding electrode.
By said structure, can not form across the conductivity lead-in wire that conductivity goes between, one-level is transmitted the balanced signal of input and output to the 3 balanced terminals that the conductivity that the balanced signal of input and output to the 1 balanced terminals is transmitted goes between, the balanced signal of input and output to the 2 balanced terminals is transmitted.Thus, can suppress the balanced signal of input and output to the 1 balanced terminals transmission path, input and output to the 2 balanced terminals balanced signal transmission path, with the phase mutual interference of the transmission path of the balanced signal of input and output to the 3 balanced terminals, can highly guarantee the isolation between each transmission path.In addition, due to the electrode pattern without formation intersection use on substrate 101, so the electrode pattern simplification of substrate 101, design is easy and formation is also easy.
In addition, as shown in Figure 1 above, with each weld pad electrode of the switch I C element SW-, the SW+ that form balanced terminals, with the mode apart from roughly the same of the grounding electrode that they are connected, dispose grounding electrode.Particularly, for example, the weld pad electrode PT1 of switch I C element SW+ and grounding electrode P L1Projector distance on the components and parts installed surface of substrate 101, with weld pad electrode PT1 and the grounding electrode P of switch I C element SW- L3Projector distance on the components and parts installed surface of substrate 101 is roughly the same.Thus, grounding electrode P L1And the transmission range of the signal between the weld pad electrode PT1 of switch I C element SW+, with grounding electrode P L3And the transmission range of the signal between the weld pad electrode PT1 of switch I C element SW-is roughly the same.Therefore, only by the wire length to conductivity lead-in wire 915,925, undertaken a little and adjust, can be lifted at the equilibrium response of the signal that transmits in this balanced circuit.
In addition, though unspecified, the 2nd balanced terminals, the 3rd balanced terminals also keep same weld pad electrode and the relation of grounding electrode, also can be lifted at the equilibrium response of the signal that transmits in the balanced circuit that is connected with these balanced terminals.
In addition, the equilibrium response excellence due to all balanced circuits, can have high equilibrium response as high-frequency model 100.
In addition, above-mentioned weld pad electrode PG, PVD, PCT are connected in identical grounding electrode with switch I C element SW-, SW+, but this moment, shown in dotted line as shown in Figure 1, Figure 2, from the conductivity of switch I C element SW-lead-in wire to the link position of grounding electrode from the conductivity lead-in wire of switch I C element SW+ to the link position of the grounding electrode installation site away from switch IC element SW-, SW+.
Particularly, for example, the grounding electrode P from the weld pad electrode PVD of switch I C element SW-toward substrate 101 L4The 914 couples of grounding electrode P of conductivity lead-in wire that connect L4The link position grounding electrode P from the weld pad electrode PVD of switch I C element SW+ toward substrate 101 L4The 924 couples of grounding electrode P of conductivity lead-in wire that connect L4Link position far away.
Similarly, the grounding electrode P from the weld pad electrode PCT of switch I C element SW-toward substrate 101 L12The 916 couples of grounding electrode P of conductivity lead-in wire that connect L12The link position grounding electrode P from the weld pad electrode PCT of switch I C element SW+ toward substrate 101 L12The 926 couples of grounding electrode P of conductivity lead-in wire that connect L12Link position far away.
Moreover, the grounding electrode P from the weld pad electrode PG of switch I C element SW-toward substrate 101 L8The 912 couples of grounding electrode P of conductivity lead-in wire that connect L8The link position grounding electrode P from the weld pad electrode PG of switch I C element SW+ toward substrate 101 L8The 922 couples of grounding electrode P of conductivity lead-in wire that connect L8Link position far away.
Thus, can make to encircle the conductivity from switch I C element SW+ that highly must uprise goes between roughly consistent with the wire length of encircling the lead-in wire of the conductivity from switch I C element SW-of highly controlling lowlyer.Thus, make public weld pad electrode roughly consistent with the conductor length that switch IC element SW-, SW+ are connected.
Therefore, can provide simultaneously drive voltage signal VDD or switch-over control signal CTL to switch IC element SW-, SW+.In addition, can make the earth connection of switch I C element SW-, SW+ become equal length.Thus, can promote the switching precision as the switching circuit of balanced signal, and also can the interelement earth balance of lifting switch IC.
Moreover, on identical grounding electrode, far away than switch I C element SW+ by making from the link position of switch I C element SW-, the joint operation that is easier to go between.Therefore, can avoid going between each other contact.
In addition, even be not identical grounding electrode, if each weld pad electrode with the switch I C element SW-, the SW+ that form balanced terminals disposes grounding electrode with the mode apart from roughly the same of the grounding electrode that they are connected as described above, far away to the link position of grounding electrode from the lead-in wire of switch I C element SW+ to the link position of grounding electrode by making from the lead-in wire of switch I C element SW-, can be lifted at the equilibrium response of the signal of this balanced circuit transmission.
In addition, the high-frequency model 100 of said structure can be by following processing procedure manufacture.Fig. 4 means the flow chart of processing procedure of the high-frequency model 100 of embodiment of the present invention 1.
As the 1st step, from semiconductor crystal wafer, cut out switch I C element SW-, SW+ (S101).At this moment, be preferably, overlapping switch I C element SW-, SW+ uses the switch I C element that cuts out from identical semiconductor crystal wafer.Thus, switch I C element SW-, SW+ that can characteristic deviation each other is less make up utilization.
As the 2nd step, by switch I C element SW-chip join to substrate 101 (S102).Particularly, to the installation region of the switch I C element SW-of the components and parts installed surface of substrate 101, provide chip join agent 130, switch I C element SW-is installed.At this moment, take the alignment mark on not shown substrate 101 as benchmark, switch I C element SW-is installed.
As the 3rd step, by baking chip join agent 130, switch I C element SW-temporarily is fixed on to (S103) on substrate 101.At this moment, as long as be fixed into not can be because of the degree of the installation position skew of the wire-bonded of next step or switch I C element SW+ for switch I C element SW-.
As the 4th step, by the grounding electrode of the weld pad electrode of switch I C element SW-and substrate 101 with the wire-bonded (S104) in addition of the wiring shown in Fig. 1 (B).At this moment, wire-bonded is carried out the reverse engagement that the conductivity lead-in wire connects with the grounding electrode side from substrate 101.
As the 5th step, configuration, as the nude film film 120 of adhesives, is installed on the face (S105) of the weld pad electrode side of switch I C element SW+ on the face of the opposition side of the weld pad electrode side of switch I C element SW+.At this moment, with switch I C element SW-, SW+, overlooking the mode that direction is identical installs switch I C element SW+.In addition, in this situation, the alignment mark that utilizes during using above-mentioned installation switch I C element SW-similarly uses and gets final product as benchmark.
As the 6th step, by baking nude film film 120, switch I C element SW+ is fixed in to switch I C element SW-(S106).At this moment, at the higher temperature of the baking of the chip join agent 130 that the 3rd step is carried out, to toast.Thus, promote fixing between switch I C element SW-, SW+, and promoted fixing between switch I C element SW-and substrate 101.
As the 7th step, the grounding electrode of the weld pad electrode of switch I C element SW+ and substrate 101 is carried out to wire-bonded (S107) with the wiring shown in Fig. 1 (A).At this moment, wire-bonded can be carried out the reverse engagement that the conductivity lead-in wire is connected with the grounding electrode side from substrate 101, also can the common wire-bonded that the conductivity lead-in wire is connected be carried out with the weld pad electrode side from switch I C element SW+.
In addition, in the 5th step of the present embodiment, though the adhesives between switch I C element SW-and switch I C element SW+ uses the nude film film, but for example as adhesives, also can after on the face of the opposition side of the weld pad electrode side of the face of the weld pad electrode side that the chip join material is coated on to switch I C element SW-or switch I C element SW+, switch I C element SW+ be arranged on switch I C element SW-.At this moment, in the 6th step, make the sclerosis of chip join material, switch I C element SW+ is fixed in to switch I C element SW-.
In addition, when coating chip join material, be preferably, by whole coating of the chip join material of insulating properties, but can keeping between different weld pad electrode or, under the state of the insulating properties between different lead-in wires, also can use the chip join material of conductivity.
Then, illustrate referring to the drawings the high-frequency model of the present invention's the 2nd execution mode.Fig. 5 means the figure of mounting structure of the high-frequency model 100A of the present invention's the 2nd execution mode.The annexation of Fig. 5 (A) expression substrate 101A and switch I C element SW3+, the annexation of Fig. 5 (B) expression substrate 101A and switch I C element SW3-.Fig. 6 is the equivalent circuit diagram of the high-frequency model 100A of the present invention's the 2nd execution mode.The high-frequency model 100 of above-mentioned execution mode 1 is connected in two balanced circuits by a balanced circuit switching, and with respect to this, the high-frequency model 100A of present embodiment is connected in three balanced circuits by a balanced circuit switching.Therefore, processing procedure is identical, and therefore description thereof is omitted.
The high-frequency model 100A of the present invention's the 2nd execution mode possesses two switch I C element SW3-, SW3+ and substrate 101A.
Switch I C element SW3-and switch I C element SW3+ are semi-conductive bare chip, are identical appearance shape, same circuits structure.Moreover the structure of switch I C element SW3-and switch I C element SW3+ and configuration pattern also are connected use with outside weld pad electrode is identical.Switch I C element SW3-is equivalent to " the 1st switch I C " of the present invention, and switch I C element SW3+ is equivalent to " the 2nd switch I C " of the present invention.
Switch I C element SW3-, SW3+ are so-called SP3T (Single Pole3Throw: SP3T) switch, with the drive voltage signal VDD from outside, drive, according to the combination of control signal V1, V2, weld pad electrode PT1 (the 1st port) switching is connected in to any of weld pad electrode PT2 (the 2nd port), weld pad electrode PT3 (the 3rd port), weld pad electrode PT4 (the 4th port).
On the 1st interarea of substrate 101A, with the regulation Pareto diagram, be formed with a plurality of grounding electrode P L1～P L12.That is, the 1st interarea of substrate 101A is the components and parts installed surface of this substrate.A plurality of grounding electrode P L1～P L12As shown in Figure 5, schematically form the installation site that surrounds switch I C element SW3-, SW3+.
More specifically, with following allocation plan case, form a plurality of grounding electrode P L1～P L12.Herein, simple in order to make explanation, in advance substrate 101A being set as overlooking under state is square (square region that in fact, is equivalent to substrate 101).
Roughly, along linking the direction of this 1st square bight 111A (bight of upper left during front view 5) with the 2nd bight 112A (bight of lower-left during front view 5), from the 1st bight 111A side devices spaced apart successively, with the regulation area, form grounding electrode P L6, grounding electrode P L5, grounding electrode P L4.
Roughly, along the direction that links the 2nd bight 112A and the 3rd bight 113A (bight of bottom right during front view 5), from the 2nd bight 112A side devices spaced apart successively, with the regulation area, form grounding electrode P L3, grounding electrode P L2, grounding electrode P L1.
Roughly, along the direction that links the 3rd bight 113A and the 4th bight 114A (bight of upper right during front view 5), from the 3rd bight 113A side devices spaced apart successively, with the regulation area, form grounding electrode P L12, grounding electrode P L11, grounding electrode P L10.
Roughly, along the direction that links the 4th bight 114A and the 1st bight 111A, from the 4th bight 114A side devices spaced apart successively, with the regulation area, form grounding electrode P L9, grounding electrode P L8, grounding electrode P L7.
In addition, on the 1st interarea of substrate 101A, arranging a plurality of grounding electrode P that form L1～P L12The substantial middle in the zone that surrounds is equipped with switch I C element SW3-.The weld pad electrode of switch I C element SW3-be mounted to towards the opposition side of substrate 101A.Switch I C element SW3-is arranged on substrate 101A via the chip join agent.
Switch I C element SW3+ is arranged on the weld pad electrode side of switch I C element SW3-.The weld pad electrode of switch I C element SW3+ be mounted to towards with switch I C element SW3-and substrate 101A opposition side.Switch I C element SW3+ is arranged on switch I C element SW3-via the nude film film.
Switch I C element SW3-, SW3+ possess weld pad electrode PT1, PT2, PT3, PT4, PG, PVD, PV1, PV2.Weld pad electrode PG be configured in switch I C element SW3-, SW3+ bight 121A near.Weld pad electrode PVD be configured in switch I C element SW3-, SW3+ bight 122A near.Weld pad electrode PT2 is configured between weld pad electrode PG and weld pad electrode PVD.That is, weld pad electrode PT2 is configured in the assigned position midway on limit of link bight 121A, the 122A of switch I C element SW3-, SW3+.Weld pad electrode PV2 be configured in switch I C element SW3-, SW3+ bight 123A near.Bight 123A is the diagonal angle of bight 121A.Weld pad electrode PT4 be configured in switch I C element SW3-, SW3+ bight 124A near.Bight 124A is the diagonal angle of bight 122A.Weld pad electrode PV1 is configured between weld pad electrode PV2 and weld pad electrode PT4.That is, weld pad electrode PV1 is configured in the assigned position of centre on limit of link bight 123A, the 124A of switch I C element SW3-, SW3+.Weld pad electrode PT3 is configured between weld pad electrode PT4 and weld pad electrode PT2.That is, weld pad electrode PT3 is configured in the assigned position of centre on limit of link bight 124A, the 121A of switch I C element SW3-, SW3+.
Switch I C element SW3-and switch I C element SW3+ for the configuration structure by above-mentioned weld pad electrode forms, observe from the direction of the components and parts installed surface quadrature with substrate 101A, as one man is arranged on equidirectional.Moreover at this moment, the bight 121A of switch I C element SW3-, SW3+ becomes the bight 111A side of substrate 101A, and bight 123A becomes the bight 113A side of substrate 101A.
The weld pad electrode PT1 of switch element SW3-is by the conductivity 932 grounding electrode P that are connected in substrate 101A that go between L3.The weld pad electrode PT2 of switch element SW3-is by the conductivity 934 grounding electrode P that are connected in substrate 101A that go between L6.The weld pad electrode PT3 of switch element SW3-is by the conductivity 936 grounding electrode P that are connected in substrate 101A that go between L8.The weld pad electrode PT4 of switch element SW3-is by the conductivity 937 grounding electrode P that are connected in substrate 101A that go between L11.
The weld pad electrode PG of switch element SW3-is by the conductivity 935 grounding electrode P that are connected in substrate 101A that go between L7.The weld pad electrode PVD of switch element SW3-is by the conductivity 933 grounding electrode P that are connected in substrate 101A that go between L4.The weld pad electrode PV1 of switch element SW3-is by the conductivity 938 grounding electrode P that are connected in substrate 101A that go between L12.The weld pad electrode PV2 of switch element SW3-is by the conductivity 931 grounding electrode P that are connected in substrate 101A that go between L1.
The weld pad electrode PT1 of switch element SW3+ is by the conductivity 942 grounding electrode P that are connected in substrate 101A that go between L2.The weld pad electrode PT2 of switch element SW3+ is by the conductivity 944 grounding electrode P that are connected in substrate 101A that go between L5.The weld pad electrode PT3 of switch element SW3+ is by the conductivity 946 grounding electrode P that are connected in substrate 101A that go between L9.The weld pad electrode PT4 of switch element SW3+ is by the conductivity 947 grounding electrode P that are connected in substrate 101A that go between L10.
The weld pad electrode PG of switch element SW3+ is by the conductivity 945 grounding electrode P that are connected in substrate 101A that go between L7.The weld pad electrode PVD of switch element SW3+ is by the conductivity 943 grounding electrode P that are connected in substrate 101A that go between L4.The weld pad electrode PV1 of switch I C element SW3+ is by the conductivity 948 grounding electrode P that are connected in substrate 101A that go between L12.The weld pad electrode PV2 of switch element SW3+ is by the conductivity 941 grounding electrode P that are connected in substrate 101A that go between L1.
By above structure, can realize the high-frequency model 100A that is formed by equivalent electric circuit shown in Figure 6.this high-frequency model 100A will be usingd the weld pad electrode PT1 of switch I C element SW3-and optionally will be connected in switch I C element SW3-as the 1st balanced terminals of the 2nd independent terminals as the 1st independent terminals and the weld pad electrode PT1 of switch I C element SW3+ of usining, the weld pad electrode PT2 of SW3+ is as the 2nd right balanced terminals of independent terminals, with switch I C element SW3-, the weld pad electrode PT3 of SW3+ is as the 3rd right balanced terminals of independent terminals, with switch I C element SW3-, the weld pad electrode PT4 of SW3+ is as any of the 4th right balanced terminals of independent terminals.
From being connected in grounding electrode P L1External connection terminals P1+ be connected in grounding electrode P L3The balanced signal of external connection terminals P1-input be input to the 1st balanced terminals that the weld pad electrode PT1 by switch I C element SW3+, SW3-forms.Switch I C element SW3+, SW3-are by via grounding electrode P L4, the drive voltage signal VDD that applies of weld pad electrode PVD powers.Switch I C element SW3+, SW3-, according to via grounding electrode P L12, the switch-over control signal V1 that applies of weld pad electrode PV1 with via grounding electrode P L1, the switch-over control signal V2 that applies of weld pad electrode PV2 combination carry out switching controls.
For the balanced signal that inputs to the 1st balanced terminals, by switch I C element SW3+, SW3-, switch its connection status, export it any of the 2nd, the 3rd, the 4th balanced terminals to.From the balanced signal of the 2nd balanced terminals output via grounding electrode P L5, P L6From external connection terminals P2+, P2-, export external circuit to.From the balanced signal of the 3rd balanced terminals output via grounding electrode P L9, P L8From external connection terminals P3+, P3-, export external circuit to.From the balanced signal of the 4th balanced terminals output via grounding electrode P L10, P L11From external connection terminals P4+, P4-, export external circuit to.
In addition, the high-frequency model 100A of said structure can obtain the following effects effect.
If by by the overlapping components and parts installed surface that is installed on substrate 101A of switch I C element SW3-, SW3+, thereby use two switch I C elements to form the switching circuit of balanced signals, erection space is diminished.Especially, as in the present embodiment, select the circuit number more to increase, more effectively act on the miniaturization of high-frequency model.
In above-mentioned configuration structure, identical with execution mode 1, if switch I C element SW3-, SW3+ are installed on to substrate 101A, from the direction of the components and parts installed surface quadrature with substrate 101A, observe, approaching with grounding electrode by the go between weld pad electrode that connects of conductivity, between these electrodes, do not configure other weld pad electrode or grounding electrode.
For example, the weld pad electrode PT2 of switch I C element SW3+ and grounding electrode P L5Approach, between them, do not configure other weld pad electrode or grounding electrode.Similarly, the weld pad electrode PT2 of switch I C element SW3-and grounding electrode P L6Approach, between them, do not configure other weld pad electrode or grounding electrode.
By said structure, the conductivity lead-in wire that can not form across conductivity lead-in wire that the balanced signal of input and output to the 1 balanced terminals is transmitted, the balanced signal of input and output to the 2 balanced terminals is transmitted, the conductivity lead-in wire that the balanced signal of input and output to the 3 balanced terminals is transmitted and the conductivity lead-in wire that the balanced signal of input and output to the 4 balanced terminals is transmitted.Thus, the phase mutual interference of transmission path of balanced signal of transmission path, input and output to the 4 balanced terminals of balanced signal of transmission path, input and output to the 3 balanced terminals of balanced signal of transmission path, input and output to the 2 balanced terminals of the balanced signal of input and output to the 1 balanced terminals can be suppressed, the isolation between each transmission path can be highly guaranteed.In addition, due to the electrode pattern without formation intersection use on substrate 101A, so the electrode pattern simplification of substrate 101A, design is easy and formation is also easy.
In addition, as shown in Figure 5, with each weld pad electrode of the switch I C element SW3-, the SW3+ that form balanced terminals, with the mode apart from roughly the same of the grounding electrode that they are connected, dispose grounding electrode.Particularly, for example, the weld pad electrode PT2 of switch I C element SW3+ and grounding electrode P L5Projector distance on the components and parts installed surface of substrate 101A, with weld pad electrode PT2 and the grounding electrode P of switch I C element SW3- L6Projector distance on the components and parts installed surface of substrate 101A is roughly the same.Thus, grounding electrode P L5And the transmission range of the signal between the weld pad electrode PT2 of switch I C element SW3+, with grounding electrode P L6And the transmission range of the signal between the weld pad electrode PT2 of switch I C element SW3-is roughly the same.Therefore, by only the wire length of conductivity lead-in wire 934,944 being adjusted slightly, can be lifted at the equilibrium response of the signal that transmits in this balanced circuit.
In addition, though unspecified, but identical with execution mode 1, the 2nd balanced terminals, the 3rd balanced terminals, the 4th balanced terminals also keep same weld pad electrode and the relation of grounding electrode, also can be lifted at the equilibrium response of the signal that transmits in the balanced circuit that is connected with these balanced terminals.
In addition, due to the equilibrium response excellence of all balanced circuits, therefore as high-frequency model 100A, can have high equilibrium response.
In addition, above-mentioned weld pad electrode PG, PVD, PV1, PV2 are connected in identical grounding electrode with switch I C element SW3-, SW3+, but this moment, as shown in Figure 5, from the conductivity of switch I C element SW3-lead-in wire to the link position of grounding electrode from the conductivity lead-in wire of switch I C element SW3+ to the link position of the grounding electrode installation site away from switch IC element SW3-, SW3+.
Particularly, for example, the grounding electrode P from the weld pad electrode PVD of switch I C element SW3-toward substrate 101A L4The 933 couples of grounding electrode P of conductivity lead-in wire that connect L4The link position grounding electrode P from the weld pad electrode PVD of switch I C element SW3+ toward substrate 101A L4The 943 couples of grounding electrode P of conductivity lead-in wire that connect L4Link position far away.
Similarly, the grounding electrode P from the weld pad electrode PV1 of switch I C element SW3-toward substrate 101A L12The 938 couples of grounding electrode P of conductivity lead-in wire that connect L12The link position grounding electrode P from the weld pad electrode PV1 of switch I C element SW3+ toward substrate 101A L12The 948 couples of grounding electrode P of conductivity lead-in wire that connect L12Link position far away.
Similarly, the grounding electrode P from the weld pad electrode PV2 of switch I C element SW3-toward substrate 101A L1The 931 couples of grounding electrode P of conductivity lead-in wire that connect L1The link position grounding electrode P from the weld pad electrode PV2 of switch I C element SW3+ toward substrate 101A L1The 941 couples of grounding electrode P of conductivity lead-in wire that connect L1Link position far away.
Moreover, the grounding electrode P from the weld pad electrode PG of switch I C element SW3-toward substrate 101A L7The 935 couples of grounding electrode P of conductivity lead-in wire that connect L7The link position grounding electrode P from the weld pad electrode PG of switch I C element SW3+ toward substrate 101A L7The 945 couples of grounding electrode P of conductivity lead-in wire that connect L7Link position far away.
Thus, can make to encircle the conductivity from switch I C element SW3+ that highly must uprise goes between roughly consistent with the wire length of encircling the lead-in wire of the conductivity from switch I C element SW3-of highly controlling lowlyer.Thus, roughly consistent with the conductor length that switch I C element SW3-, SW3+ connect to public weld pad electrode.
Therefore, identical with execution mode 1, can provide simultaneously drive voltage signal VDD or switch-over control signal V1, V2 to switch IC element SW3-, SW3+.In addition, can make the earth connection of switch I C element SW3-, SW3+ is equal length.Thus, can promote the switching precision as the switching circuit of balanced signal, and also can the interelement earth balance of lifting switch IC.
In addition, in the respective embodiments described above, though the structure that has represented to switch the structure of two balanced circuits and switched three balanced circuits also can be applicable to switch the structure of the balanced circuit more than four.
Label declaration
100,100A: high-frequency model
101,101A: substrate
120: the nude film film
130: the chip join agent
SW-, SW+, SW3-, SW3+: switch I C element

Claims (7)

1. high-frequency model comprises:
The 1st switch I C that the configuration structure of weld pad electrode is identical and the 2nd switch I C; And
Substrate, this substrate possesses the grounding electrode that is connected in described weld pad electrode, and possesses the electrode that described the 1st switch I C and the 2nd switch I C is connected to external circuit;
Described the 1st switch I C is installed on described substrate;
Described the 2nd switch I C is installed on described the 1st switch I C and face described substrate opposition side;
Described the 1st switch I C and described the 2nd switch I C are mounted to described weld pad electrode and expose on the face with described substrate-side opposition side;
Each described weld pad electrode is connected by wire-bonded with described grounding electrode.
2. high-frequency model as claimed in claim 1, is characterized in that,
Described the 1st switch I C and described the 2nd switch I C are identical switch I C.
3. high-frequency model as claimed in claim 1 or 2, is characterized in that,
Specific weld pad electrode with and the specific grounding electrode that is connected of specific weld pad electrode between, configure other grounding electrode different from this specific grounding electrode.
4. high-frequency model as described as any one of claims 1 to 3, is characterized in that,
Described the 2nd switch I C is installed on described the 1st switch I C and face described substrate opposition side via bonding agent.
5. high-frequency model as described as any one of claim 1 to 4, is characterized in that,
Described the 1st switch I C and described the 2nd switch I C are installed on equidirectional.
6. high-frequency model as claimed in claim 5, is characterized in that,
In described the 1st switch I C, possess the 1st independent terminals that forms balanced terminals, in described the 2nd switch I C, possess the 2nd independent terminals that forms described balanced terminals;
As the distance of the 1st weld pad electrode of described the 1st independent terminals and the 1st grounding electrode that is connected in the 1st weld pad electrode by wire-bonded and as the distance of described the 2nd weld pad electrode of described the 2nd independent terminals and the 2nd grounding electrode that is connected in the 2nd weld pad electrode by wire-bonded about equally.
7. high-frequency model as described as claim 5 or 6, is characterized in that,
The 3rd weld pad electrode of described the 1st switch I C and the 4th weld pad electrode of described the 2nd switch I C are configured to roughly overlapping;
The 3rd weld pad electrode of described the 1st switch I C is connected in the 3rd identical weld pad electrode with the 4th weld pad electrode of described the 2nd switch I C;
The lead-in wire that connects described the 3rd weld pad electrode and described the 3rd grounding electrode is connected in the position of described the 3rd grounding electrode, the lead-in wire that connects described the 4th weld pad electrode and described the 3rd grounding electrode is connected in the position of described the 3rd grounding electrode, leaves the installation site of described the 1st, the 2nd switch I C to described substrate.
CN201280010496.XA 2011-10-17 2012-08-02 High-frequency module Expired - Fee Related CN103403866B (en)

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JP2011-228050 2011-10-17
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JP2012137437A JP5257722B2 (en) 2011-10-17 2012-06-19 High frequency module
PCT/JP2012/069652 WO2013058000A1 (en) 2011-10-17 2012-08-02 High-frequency module

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CN1822364A (en) * 2005-02-18 2006-08-23 富士通株式会社 Semiconductor device

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JP2013102120A (en) 2013-05-23
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JP5257722B2 (en) 2013-08-07
TWI559489B (en) 2016-11-21

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