CN103403847A - 氮化硅膜的成膜方法、有机电子器件的制造方法和氮化硅膜的成膜装置 - Google Patents

氮化硅膜的成膜方法、有机电子器件的制造方法和氮化硅膜的成膜装置 Download PDF

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CN103403847A
CN103403847A CN2012800105318A CN201280010531A CN103403847A CN 103403847 A CN103403847 A CN 103403847A CN 2012800105318 A CN2012800105318 A CN 2012800105318A CN 201280010531 A CN201280010531 A CN 201280010531A CN 103403847 A CN103403847 A CN 103403847A
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silicon nitride
plasma
nitride film
gas
film
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Chinese (zh)
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石川拓
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
CN2012800105318A 2011-02-24 2012-02-06 氮化硅膜的成膜方法、有机电子器件的制造方法和氮化硅膜的成膜装置 Pending CN103403847A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011-038342 2011-02-24
JP2011038342 2011-02-24
JP2011233620A JP5941653B2 (ja) 2011-02-24 2011-10-25 シリコン窒化膜の成膜方法及びシリコン窒化膜の成膜装置
JP2011-233620 2011-10-25
PCT/JP2012/052608 WO2012114856A1 (ja) 2011-02-24 2012-02-06 シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置

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CN103403847A true CN103403847A (zh) 2013-11-20

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JP (1) JP5941653B2 (enrdf_load_stackoverflow)
KR (1) KR101881470B1 (enrdf_load_stackoverflow)
CN (1) CN103403847A (enrdf_load_stackoverflow)
TW (1) TWI533378B (enrdf_load_stackoverflow)
WO (1) WO2012114856A1 (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107275507A (zh) * 2016-03-31 2017-10-20 株式会社日本有机雷特显示器 有机el显示面板及其制作方法
CN107507774A (zh) * 2016-06-14 2017-12-22 东京毅力科创株式会社 氮化硅膜的处理方法以及氮化硅膜的形成方法
CN109468613A (zh) * 2017-09-07 2019-03-15 东京毅力科创株式会社 成膜装置以及成膜方法
CN109952632A (zh) * 2016-11-11 2019-06-28 朗姆研究公司 降低SiN膜的湿法蚀刻速率而不损坏下伏衬底的方法
CN110408909A (zh) * 2018-04-26 2019-11-05 Spts科技有限公司 沉积SiN膜的方法
US11832533B2 (en) 2018-08-24 2023-11-28 Lam Research Corporation Conformal damage-free encapsulation of chalcogenide materials
US12157945B2 (en) 2019-08-06 2024-12-03 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
US12412742B2 (en) 2021-07-27 2025-09-09 Lam Research Corporation Impurity reduction in silicon-containing films

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014060378A (ja) * 2012-08-23 2014-04-03 Tokyo Electron Ltd シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置
CN108713243B (zh) 2016-03-11 2022-11-01 大阳日酸株式会社 硅氮化膜的制造方法及硅氮化膜

Citations (4)

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Publication number Priority date Publication date Assignee Title
CN1693537A (zh) * 2004-05-03 2005-11-09 应用材料公司 保形性、应力和化学气相沉积层成分独立可变的甚低温化学气相沉积工艺
US20060214270A1 (en) * 2005-03-28 2006-09-28 Eudyna Devices Inc. Semiconductor device and fabrication method therefor, capacitive element and fabrication method therefor, and MIS type semiconductor device and fabrication method therefor
US20090075098A1 (en) * 2007-09-19 2009-03-19 Jiro Tsukahara Environment-sensitive device, and method for sealing environment- sensitive element
CN101499411A (zh) * 2008-02-01 2009-08-05 东京毅力科创株式会社 等离子体处理装置

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JP2003288983A (ja) 2002-01-24 2003-10-10 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法、及び製造装置
US7214600B2 (en) * 2004-06-25 2007-05-08 Applied Materials, Inc. Method to improve transmittance of an encapsulating film
JP4664119B2 (ja) * 2005-05-17 2011-04-06 東京エレクトロン株式会社 プラズマ処理装置
JP2009246130A (ja) * 2008-03-31 2009-10-22 Tokyo Electron Ltd 成膜装置、成膜方法及び半導体集積回路装置の製造方法
JP2010219112A (ja) 2009-03-13 2010-09-30 Tokyo Electron Ltd アモルファスハイドロカーボンナイトライド（ａ−ＣＮ：Ｈｘ）膜の成膜方法、有機ＥＬデバイスおよびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1693537A (zh) * 2004-05-03 2005-11-09 应用材料公司 保形性、应力和化学气相沉积层成分独立可变的甚低温化学气相沉积工艺
US20060214270A1 (en) * 2005-03-28 2006-09-28 Eudyna Devices Inc. Semiconductor device and fabrication method therefor, capacitive element and fabrication method therefor, and MIS type semiconductor device and fabrication method therefor
US20090075098A1 (en) * 2007-09-19 2009-03-19 Jiro Tsukahara Environment-sensitive device, and method for sealing environment- sensitive element
CN101499411A (zh) * 2008-02-01 2009-08-05 东京毅力科创株式会社 等离子体处理装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107275507A (zh) * 2016-03-31 2017-10-20 株式会社日本有机雷特显示器 有机el显示面板及其制作方法
CN107507774A (zh) * 2016-06-14 2017-12-22 东京毅力科创株式会社 氮化硅膜的处理方法以及氮化硅膜的形成方法
CN107507774B (zh) * 2016-06-14 2021-02-02 东京毅力科创株式会社 氮化硅膜的处理方法以及氮化硅膜的形成方法
CN109952632A (zh) * 2016-11-11 2019-06-28 朗姆研究公司 降低SiN膜的湿法蚀刻速率而不损坏下伏衬底的方法
CN109952632B (zh) * 2016-11-11 2024-02-13 朗姆研究公司 降低SiN膜的湿法蚀刻速率而不损坏下伏衬底的方法
CN109468613A (zh) * 2017-09-07 2019-03-15 东京毅力科创株式会社 成膜装置以及成膜方法
CN110408909A (zh) * 2018-04-26 2019-11-05 Spts科技有限公司 沉积SiN膜的方法
US11832533B2 (en) 2018-08-24 2023-11-28 Lam Research Corporation Conformal damage-free encapsulation of chalcogenide materials
US12157945B2 (en) 2019-08-06 2024-12-03 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
US12412742B2 (en) 2021-07-27 2025-09-09 Lam Research Corporation Impurity reduction in silicon-containing films

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Publication number Publication date
KR101881470B1 (ko) 2018-07-24
JP2012188735A (ja) 2012-10-04
KR20140006907A (ko) 2014-01-16
JP5941653B2 (ja) 2016-06-29
TWI533378B (zh) 2016-05-11
TW201248729A (en) 2012-12-01
WO2012114856A1 (ja) 2012-08-30

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Application publication date: 20131120