CN103401514A - Low-noise amplifier - Google Patents
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Abstract
The invention relates to the field of wireless communication technology, and discloses a low-noise amplifier which adopts a cascode structure and comprises a following capacitor, wherein two ends of the following capacitor are connected with the grid of an MOS tube of the cascode structure and the ground respectively. As the following capacitor is arranged between the grid of the MOS tube of the cascode structure and the reference ground, and the capacitance value of the following capacitor is compromised and optimized, the linearity is improved. The low-noise amplifier has the advantages that the structure is simple; the power consumption is reduced; an input third-order intercept point IIP3 can be improved effectively; the gain of the low-noise amplifier is improved; impact on noise factors of the middle and post levels of a receiving system can be avoided, so as to improve the linearity; the performance of the low-noise amplifier can be optimized integrally.
Description
Technical field
The present invention relates to wireless communication technology field, more particularly, relate to a kind of low noise amplifier.
Background technology
Low noise amplifier (LNA, Low Noise Amplifier) generally is used as high frequency or the intermediate-frequency preamplifier of all kinds of radio receivers, and the amplifying circuit of high sensitivity electron detection equipment.In the occasion of amplifying small-signal, the noise of amplifier self may be very serious to the interference of signal, therefore wishes to reduce this noise, to improve the signal to noise ratio of output.Low noise amplifier, as the major part of radio-frequency receiver front-end, affects the important indicator of its performance quality except noise factor, gain, impedance matching, power consumption etc., and the linearity is also one of important indicator of weighing its performance quality.Because when in the situation that high reject signal while receiving a weak signal, without the interference signal of filtering, can send into the input of LNA, because the non-linear of amplifier itself can produce intermodulation component, a part wherein will enter useful channel, wherein useful signal is produced and disturbs, cause receiving sensitivity to reduce (or being called obstruction), for avoiding this situation, just require LNA need keep high linearity when receiving strong signal.
In the communication system of modern multimode multi-frequency section, interference each other is especially serious.In cable TV (Cable TV) receiver, reach up to a hundred channels (channel) and transmit simultaneously signal, the signal power that each channel transmits is in-10dBm left and right.When receiver received the signal of some channels, the signal of other channel was all interference source to current receive channel, and their intermodulation frequency can enter in current receive channel, the low noise amplifier in the barrage reception machine, the sensitivity that impact receives.
In the multimode multi-frequency section smart mobile phone of extensive use now, the receive-transmit systems such as GSM, DCS, WCDMA, WiFi, GPS are arranged simultaneously usually for another example.The received signal strength of GPS is very low ,-below 150dBm, very easily be subject to the interference of other signal.For example: the emission intermodulation frequency of DCS-1800 and PCS-1900 is in the frequency range of GPS; The emission intermodulation frequency of GSM850 and WIFI also can drop in the frequency range of GPS; Also have the emission intermodulation frequency of WCDMA and PCS also can drop in the GPS frequency band; If the linearity of GPS LNA is bad, the relative very high intermodulation component of these amplitudes can block the reception LNA of GPS, causes GPS sensitivity to descend.
The index of the linearity has I/O 1dB compression point (IP1dB/OP1dB) and I/O third order intermodulation point (IIP3/OIP3).Wherein IIP3 can directly reflect the intermodulation situation, therefore IIP3 commonly used weighs the linearity of low noise amplifier.IIP3 is higher, and corresponding 1dB compression point is also higher, and the scope of LNA linear work is larger, and the ability of its anti-intermodulation distortion is stronger.Therefore, in order accurately to set forth the improvement of the present invention to the linearity, can be with the linearity that characterizes low noise amplifier of IIP3.
Existing low noise amplifier adopts cascodes (cascode) usually, the low noise amplifier of a typical cascodes is as shown in Figure 1: wherein, the one NMOS pipe 101 is common source configurations, the 2nd NMOS pipe 102 is common gate structures, the first electric capacity 103 is capacitances of input, the second electric capacity 105 is connected between the 2nd NMOS pipe 102 and ground, and the grid 102 forms one and exchanges earth point, guarantees that the common grid of the 2nd NMOS pipe 102 connect.The grid that connects respectively NMOS pipe the 101 and the 2nd a NMOS pipe 102 of the first resistance 104 and the second resistance 106, biasing circuit provide the grid voltage biasing by Vg1 and Vg2 pin for 101 and 102 respectively.The first inductance 108 is connected between 102 drain electrode and power vd D, and the 3rd electric capacity 109 is connected between 102 drain electrode and output RFout, and 108 and 109 form a frequency-selective network by resonance, as the output matching of LNA.The source electrode of the one NMOS pipe 101 is by the second inductance 107 ground connection, and the second inductance 107 of source series can improve the real part of input impedance, plays the effect of input impedance coupling.Existing cascodes low noise amplifier has the advantages such as gain is high, isolation effect is good.
But for existing low noise amplifier, in order to improve its linearity, can only be generally to gain to realize by reduction, consider that output third order intermodulation point OIP3 is constant, every reduction 1dB that gains, IIP3 namely improves 1dB.Reduce gain and generally by reducing the output impedance value, realize, therefore the normal capacitance that increases the 3rd electric capacity 109 in Fig. 1 that adopts, the inductance value that reduces simultaneously the first inductance 108 realizes.But it is limited that this method by the sacrifice gain reaches the effect of improving IIP3, because low noise amplifier also must guarantee enough gains, and can not fall too much, otherwise can not suppress the noise of rear class in receiving system.Fig. 2 has shown the demonstration result of the third order intermodulation component of the described low noise amplifier of Fig. 1 under the two tone test signal, and its third order intermodulation component value is-81dBm.
Summary of the invention
For the above-mentioned defect that exists in prior art, how technical problem to be solved by this invention is in the situation that do not affect the linearity that gain improves low noise amplifier.
For solving the problems of the technologies described above, the invention provides a kind of low noise amplifier, adopt cascodes, described amplifier comprises that is followed an electric capacity, described two ends of following electric capacity connect respectively grid and the ground of common source configuration metal-oxide-semiconductor.
Preferably, described capacitance of following electric capacity is 0.3～0.5pF.
Preferably, described low noise amplifier comprises: common source configuration metal-oxide-semiconductor, common gate structure metal-oxide-semiconductor, capacitance, ground capacity, output capacitance, follow electric capacity, the first inductance, the second inductance, the first resistance and the second resistance.
Preferably, in described low noise amplifier:
The grid of described common source configuration metal-oxide-semiconductor is connected with described capacitance, the first resistance and the end of following electric capacity simultaneously, the other end of described capacitance connects signal input port, the other end of described the first resistance is connected in the first bias voltage input port, the described other end of following electric capacity is connected with an end of described the first inductance, then the two common ground, the other end of described the first inductance is connected in the source electrode of described common source configuration metal-oxide-semiconductor; The drain electrode of described common source configuration metal-oxide-semiconductor is connected with the source electrode of described common gate structure metal-oxide-semiconductor;
The grid of described common gate structure metal-oxide-semiconductor is connected with an end of described the second resistance and described ground capacity simultaneously, and the other end of described the second resistance is connected with the second bias voltage input port, the other end ground connection of described ground capacity; The drain electrode of described common gate structure metal-oxide-semiconductor is connected in the output of signal by described output capacitance, by described the second inductance, be connected in external power source simultaneously.
Preferably, described common node of following electric capacity and described the first inductance is that bonding line is connected to ground.
Preferably, the inductance value of the stray inductance of described bonding line is equivalent to 0.5nH.
Preferably, described metal-oxide-semiconductor is the NMOS pipe.
Compared with prior art, a kind of low noise amplifier provided by the present invention, can be applicable in radio frequency integrated circuit be used to improving the linearity, an electric capacity is set by the fet gate at common source with between with reference to ground, and its capacitance is optimized in compromise, circuit structure is simple, low in energy consumption, integrated level is high, can effectively improve input third order intermodulation point IIP3, the gain that improves low noise amplifier, do not exert an influence to the noise factor of rear class in receiving system yet, and then improved the linearity, optimized on the whole the performance of low noise amplifier.
The accompanying drawing explanation
Fig. 1 is the circuit diagram of low noise amplifier of the prior art;
Fig. 2 is the third order intermodulation component result schematic diagram of low noise amplifier under the two tone test signal of prior art;
Fig. 3 is the circuit structure diagram of the low noise amplifier in one embodiment of the present of invention;
Fig. 4 is the third order intermodulation component result schematic diagram of low noise amplifier under the two tone test signal in one embodiment of the present of invention;
Fig. 5 is the schematic diagram of the low noise amplifier noise factor result contrast in prior art and one embodiment of the present of invention;
Fig. 6 is the circuit structure diagram of low noise amplifier in another embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is for implementing better embodiment of the present invention, and described description is to illustrate that rule of the present invention is purpose, not in order to limit scope of the present invention.Protection scope of the present invention should with claim the person of being defined be as the criterion, based on the embodiment in the present invention, those of ordinary skills obtain under the prerequisite of not making creative work every other embodiment, belong to the scope of protection of the invention.
For quote and know for the purpose of, the technical term that hereinafter uses, write a Chinese character in simplified form or abridge and be summarized as follows: metal-oxide-semiconductor: metal (metal)-oxide (oxide)-semiconductor (semiconductor) field effect transistor; IP3:Third-order Intercept Point, third order intermodulation intercept point, an important indicator of weighing the linearity or distortion in radio frequency or microwave multicarrier communication system.IMD3:the-third-order intermodulation distort, third order intermodulation (intermodulation) component value.
As shown in Figure 3, in one embodiment of the invention, low noise amplifier adopts cascodes, common source and common grid amplifier is the amplifier of a two-stage high-gain, common source produces the small-signal leakage current that is directly proportional to input voltage, input voltage signal is transformed into to current signal, and common gate will make the current signal of source electrode be transferred to output port by amplification.Adopt this circuit structure to have better input and output isolation, better gain, improved bandwidth, and input impedance simultaneously is high, and output impedance is higher, good stability.In the embodiments of figure 3, the present invention is that with respect to the improvement of the prior art maximum of Fig. 1 circuit comprises that is followed an electric capacity 210, and described two pole plates of following electric capacity 210 connect respectively gate input and the ground of common source configuration metal-oxide-semiconductor 201.In the present invention, by the size to following electric capacity 210, be optimized, guarantee to gain and can too much not reduce when improving the linearity, noise factor not there will be deterioration; The capacitance of preferably, following electric capacity 210 is 0.3～0.5pF.Certainly, in different circuit, the capacitance of following electric capacity 210 is had to different selections or design, at this, do not make concrete restriction.
More specifically, in the embodiment shown in fig. 3, low noise amplifier comprises: common source configuration metal-oxide-semiconductor 201, common gate structure metal-oxide-semiconductor 202, capacitance 203, ground capacity 205, output capacitance 209, follow electric capacity 210, the first inductance 207, the second inductance 208, the first resistance 204 and the second resistance 206.wherein, the grid of described common source configuration metal-oxide-semiconductor 201, respectively with described capacitance 203, the first resistance 204 and an end of following electric capacity 210 are connected, the other end of described capacitance 203 is connected in signal input port RFin, the other end of described the first resistance 204 is connected in the first bias voltage input port Vg1, biasing circuit will provide gate bias voltage for described common source configuration metal-oxide-semiconductor 201 by described the first bias voltage input port Vg1, the described other end of following electric capacity 210 is connected with an end of described the first inductance 207, then the two connects jointly with reference to ground, the other end of described the first inductance 207 is connected in the source electrode of described common source configuration metal-oxide-semiconductor 201.
The drain electrode of described common source configuration metal-oxide-semiconductor 201 is connected with the source electrode of described common gate structure metal-oxide-semiconductor 202.
The grid of described common gate structure metal-oxide-semiconductor 202, with an end of described the second resistance 206 and ground capacity 205, be connected respectively, the other end of described the second resistance 206 is connected with the second bias voltage input port Vg2, the other end ground connection of described ground capacity 205, grid at described common gate structure metal-oxide-semiconductor 202 forms an interchange earth point, and biasing circuit will provide gate bias voltage for described common gate structure metal-oxide-semiconductor 202 by described the second bias voltage input port.
The drain electrode of described common gate structure metal-oxide-semiconductor 202, be connected in the output RFout of signal by described output capacitance 209, the power port as whole circuit is connected in external power source VDD by described the second inductance 208 simultaneously.Wherein, the second inductance 208 plays the effect that suppresses AC signal, perfectly straight stream signal, together with described output capacitance 209, can form a LC frequency-selective network by parallel resonance simultaneously.
Preferably, described metal-oxide-semiconductor is further the N-type metal-oxide-semiconductor.
For illustrating the improvement of the embodiment of the present invention to the low noise amplifier linearity, take the GPS low noise amplifier as example, adopt DCS(Distributed Control System, be scattered control system) signal 1712.7MHz and PCS(Personal Communications Service, i.e. person-to-person communication service) signal 1850MHz as the input the two tone test signal.
2×1712.7MHz-1850MHz＝1575.4MHz (1)
According to formula (1), their intermodulation component lower sideband 1575.4MHz drops on the GPS frequency range, and the power by test 1575.4MHz, namely obtain IMD3.
Input third order intermodulation point IIP3 extrapolates and calculates according to third order intermodulation component value IMD3, and computing formula is as (2):
Fig. 4 is the two tone test result of embodiment of the present invention circuit structure, and its third order intermodulation component value is-91dBm, with the two tone test result of prior art Fig. 2, compares, and visible IMD3 has improved 10dB.From Fig. 2 and Fig. 4 contrast, can also find out: the gain of amplifier has reduced 1.2dB.According to aforementioned formula (2), can calculate, the IIP3 of embodiment of the present invention circuit has improved 4.4dB.
Fig. 5 is the noise factor comparison diagram as a result of two kinds of low noise amplifiers in the embodiment of the present invention, and in figure, solid line is the noise factor of circuit structure of the present invention shown in Figure 3, and dotted line is the noise factor of prior art shown in Figure 1.Visible, the noise factor in useful band does not change.Therefore, the designed low noise amplifier of the embodiment of the present invention can not exert an influence to follow-up noise factor.
Fig. 6 is an alternative embodiment of the invention.Consider in actual applications, in Fig. 2, the first inductance 207 is connected to ground with the common node of following electric capacity 210 by bonding line, in design, must take into account the stray inductance of bonding line (ESL, i.e. equivalent series inductance).As shown in Figure 6, the circuit structure of itself and Fig. 2 is basic identical, repeating part repeats no more, in the present embodiment, mainly considered the stray inductance 611 of bonding line, its inductance value can be similar to and obtain according to the physical length of bonding line, usually in side circuit, it is comparatively rational that its equivalence is become to the inductance of 0.5nH.At this moment, the source inductance of common source configuration metal-oxide-semiconductor is divided into two parts, i.e. the first inductance of series connection and the stray inductance 611 of bonding line.And follow, also stray inductance 611 tools are had a certain impact, therefore consider the effect of stray inductance 611, can suitably optimize the capacitance that reduces to follow electric capacity.
The invention provides a kind of low noise amplifier, by the grid at the common source configuration metal-oxide-semiconductor with between with reference to ground, arrange one and follow electric capacity, and compromise is optimized its capacitance and is improved the linearity.Circuit structure of the present invention is simple, and power-dissipation-reduced can effectively improve input third order intermodulation point IIP3, improve the gain of low noise amplifier, and the noise factor of rear class in receiving system is not exerted an influence, and then improved the linearity, can optimize on the whole the performance of low noise amplifier.
Above-mentioned explanation illustrates and has described some preferred embodiments of the present invention, but as previously mentioned, be to be understood that the present invention is not limited to the disclosed form of this paper, should not regard the eliminating to other embodiment as, and can be used for various other combinations, modification and environment, and can, in invention contemplated scope described herein, by technology or the knowledge of above-mentioned instruction or association area, change.And the change that those skilled in the art carry out and variation do not break away from the spirit and scope of the present invention, all should be in the protection range of claims of the present invention.
Claims (7)
1. a low noise amplifier, adopt cascodes, it is characterized in that, described low noise amplifier comprises that is followed an electric capacity, and described two ends of following electric capacity connect respectively grid and the ground of common source configuration metal-oxide-semiconductor.
2. low noise amplifier as claimed in claim 1, is characterized in that, described capacitance of following electric capacity is 0.3～0.5pF.
3. low noise amplifier as claimed in claim 1, it is characterized in that, described low noise amplifier comprises: common source configuration metal-oxide-semiconductor, common gate structure metal-oxide-semiconductor, capacitance, ground capacity, output capacitance, follow electric capacity, the first inductance, the second inductance, the first resistance and the second resistance.
4. low noise amplifier as claimed in claim 3, is characterized in that, in described low noise amplifier:
The grid of described common source configuration metal-oxide-semiconductor is connected with described capacitance, the first resistance and the end of following electric capacity simultaneously, the other end of described capacitance connects signal input port, the other end of described the first resistance is connected in the first bias voltage input port, the described other end of following electric capacity is connected with an end of described the first inductance, then the two common ground, the other end of described the first inductance is connected in the source electrode of described common source configuration metal-oxide-semiconductor; The drain electrode of described common source configuration metal-oxide-semiconductor is connected with the source electrode of described common gate structure metal-oxide-semiconductor;
The grid of described common gate structure metal-oxide-semiconductor is connected with an end of described the second resistance and described ground capacity simultaneously, and the other end of described the second resistance is connected with the second bias voltage input port, the other end ground connection of described ground capacity; The drain electrode of described common gate structure metal-oxide-semiconductor is connected in the output of signal by described output capacitance, by described the second inductance, be connected in external power source simultaneously.
5. low noise amplifier as claimed in claim 4, is characterized in that, described common node of following electric capacity and described the first inductance is that bonding line is connected to ground.
6. low noise amplifier as claimed in claim 5, is characterized in that, the inductance value of the stray inductance of described bonding line is equivalent to 0.5nH.
7. low noise amplifier as described as any one in claim 1-6, is characterized in that, described metal-oxide-semiconductor is the NMOS pipe.
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Cited By (11)
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| CN103795432A (en) * | 2014-03-10 | 2014-05-14 | 锐迪科创微电子（北京）有限公司 | High-linearity multimode radio frequency antenna switch circuit |
| WO2014180437A1 (en) * | 2013-12-13 | 2014-11-13 | 中兴通讯股份有限公司 | Radio-frequency power amplifier power supply method and device |
| CN106374944A (en) * | 2016-08-30 | 2017-02-01 | 华东师范大学 | CMOS (Complementary Metal Oxide Semiconductor) fully-integrated Ka-band full-radio-frequency structure phased array anti-interference receiving front end |
| CN106788275A (en) * | 2015-11-20 | 2017-05-31 | 厦门宇臻集成电路科技有限公司 | A kind of enhanced HEMT power amplifier circuits of cascade |
| WO2020102923A1 (en) * | 2018-11-23 | 2020-05-28 | 南京展芯通讯科技有限公司 | Low noise amplifier circuit with interference suppression |
| WO2020145585A1 (en) * | 2019-01-07 | 2020-07-16 | Samsung Electronics Co., Ltd. | Amplifier with post-distortion linearization |
| CN111884605A (en) * | 2020-08-10 | 2020-11-03 | 上海川土微电子有限公司 | Differential operational amplifier |
| CN112583361A (en) * | 2019-09-30 | 2021-03-30 | 天津大学青岛海洋技术研究院 | High-gain broadband low-noise amplifier based on noise elimination |
| CN113556090A (en) * | 2021-07-28 | 2021-10-26 | 深圳昂瑞微电子技术有限公司 | Linearity optimizing circuit and low noise amplifier including the same |
| CN114244289A (en) * | 2021-12-13 | 2022-03-25 | 电子科技大学 | High-stability low-noise amplifier based on common-gate transconductance enhancement structure |
| CN111884605B (en) * | 2020-08-10 | 2024-05-17 | 上海川土微电子有限公司 | Differential operational amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2014180437A1 (en) * | 2013-12-13 | 2014-11-13 | 中兴通讯股份有限公司 | Radio-frequency power amplifier power supply method and device |
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| CN103795432A (en) * | 2014-03-10 | 2014-05-14 | 锐迪科创微电子（北京）有限公司 | High-linearity multimode radio frequency antenna switch circuit |
| CN106788275A (en) * | 2015-11-20 | 2017-05-31 | 厦门宇臻集成电路科技有限公司 | A kind of enhanced HEMT power amplifier circuits of cascade |
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| WO2020102923A1 (en) * | 2018-11-23 | 2020-05-28 | 南京展芯通讯科技有限公司 | Low noise amplifier circuit with interference suppression |
| WO2020145585A1 (en) * | 2019-01-07 | 2020-07-16 | Samsung Electronics Co., Ltd. | Amplifier with post-distortion linearization |
| US11128265B2 (en) | 2019-01-07 | 2021-09-21 | Samsung Electronics Co., Ltd. | Amplifier with post-distortion linearization |
| CN112583361A (en) * | 2019-09-30 | 2021-03-30 | 天津大学青岛海洋技术研究院 | High-gain broadband low-noise amplifier based on noise elimination |
| CN111884605A (en) * | 2020-08-10 | 2020-11-03 | 上海川土微电子有限公司 | Differential operational amplifier |
| CN111884605B (en) * | 2020-08-10 | 2024-05-17 | 上海川土微电子有限公司 | Differential operational amplifier |
| CN113556090A (en) * | 2021-07-28 | 2021-10-26 | 深圳昂瑞微电子技术有限公司 | Linearity optimizing circuit and low noise amplifier including the same |
| CN114244289A (en) * | 2021-12-13 | 2022-03-25 | 电子科技大学 | High-stability low-noise amplifier based on common-gate transconductance enhancement structure |
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