CN103400779B - 一种半导体显示面板的制造方法 - Google Patents

一种半导体显示面板的制造方法 Download PDF

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CN103400779B
CN103400779B CN201310286869.2A CN201310286869A CN103400779B CN 103400779 B CN103400779 B CN 103400779B CN 201310286869 A CN201310286869 A CN 201310286869A CN 103400779 B CN103400779 B CN 103400779B
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马建设
苏萍
严敏
程君
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Look Around Advanced Digital Display Wuxi Co Ltd
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Abstract

本发明涉及一种超高密度半导体显示面板的制造方法，包括：将具有多颗半导体发光共晶晶片的圆片的焊接面进行贴膜；对圆片进行激光切割，得到黏贴在贴膜上的多颗半导体发光共晶晶片；将多颗半导体发光共晶晶片的发光面黏贴于扩张膜上；去除多颗半导体发光共晶晶片的焊接面贴膜；对扩张膜进行扩晶操作，使多颗半导体共晶晶片之间的间隔与基板上的晶片装载空位的间隔相同；将扩晶后的扩张膜粘贴在表面贴装设备的托盘上并将托盘的移动定位，使多颗半导体发光共晶晶片的位置与晶片装载空位相对应；步进移动托盘，使扩晶后的多颗半导体发光共晶晶片步进接近基板上的晶片装载空位；将多颗半导体发光共晶晶片植入晶片装载空位，并通过粘结剂与基板电连接。

Description

一种半导体显示面板的制造方法
技术领域
本发明涉及半导体领域，尤其涉及一种由直接贴焊的（Direct Attach,DA）的半导体发光共晶晶片构成的半导体显示面板的制造方法。 
背景技术
在传统的半导体显示器产品的制造工艺中，通常采用常规的装架和压焊工艺，具体可以如在发光二级管（Light Emitting Diodes，LED）管芯的底部电极备上银胶后对利用扩张膜对圆片上的管芯进行扩张，将扩张后圆片安置在刺晶台上，在显微镜下用刺晶笔或者利用自动吸片系统将管芯一个一个安装在印刷电路板（Printed Circuit Board)PCB）或LED支架相应的焊盘上，随后进行烧结使银胶固化。再用铝丝或金丝焊机将电极连接到LED管芯上，以作电流注入的引线。 
上述制造方法操作繁琐，制造工序时间长，而且在半导体显示器的分辨率提高到一定程度时（例如像素间距要求小于1MM时）无法实现加工。 
发明内容
本发明的目的是提供一种能够克服上述缺陷的半导体显示面板的制造方法。 
本发明提供了一种半导体显示面板的制造方法，包括：将具有多颗半导体发光共晶晶片的圆片的焊接面进行贴膜； 
对所述圆片进行激光切割，得到黏贴在贴膜上的多颗半导体发光共晶晶片； 
将所述多颗半导体发光共晶晶片的发光面黏贴于扩张膜上； 
去除所述多颗半导体发光共晶晶片的焊接面的贴膜； 
对所述扩张膜进行扩晶操作，使所述多颗半导体共晶晶片之间的间隔与基板上的晶片装载空位的间隔相同； 
将扩晶后的扩张膜粘贴在表面贴装设备的托盘上并将所述托盘的移动定位，使所述多颗半导体发光共晶晶片的位置与所述晶片装载空位相对应； 
步进移动所述托盘，使扩晶后的所述多颗半导体发光共晶晶片步进接近所述基板上的晶片装载空位； 
将所述多颗半导体发光共晶晶片植入所述晶片装载空位，并通过粘结剂与所述基板电连接。 
优选地，所述步进移动所述托盘，使扩晶后的所述多颗半导体发光共晶晶片步进接近所述基板上的晶片装载空位具体包括： 
将扩晶后的所述多颗半导体共晶晶片与所述基板上的晶片装载空位进行激光对准； 
步进移动所述托盘，当所述多颗半导体共晶晶片与所述基板上的晶片装载空位间的距离每缩小预订距离时，重新进行激光对准。 
优选地，在所述步进移动所述托盘，使扩晶后的所述多颗半导体发光共晶晶片步进接近所述基板上的晶片装载空位之前，还包括： 
在所述晶片装载空位上的与所述晶片装载空位植入的半导体发光共晶晶片的焊盘的相应位置点涂所述粘结剂。 
进一步优选地，所述粘结剂为银胶。 
优选地，所述将所述多颗半导体发光共晶晶片植入所述晶片装载空位，并通过粘结剂与所述基板电连接具体为： 
利用步进推拉所述托盘将所述多颗半导体发光共晶晶片一次性置入相应的晶片装载空位，并通过所述托盘对所述多颗半导体发光共晶晶片施加压力，使所述晶片通过粘结剂与所述基板电连接。 
优选地，所述多颗半导体发光共晶晶片具体为：红色LED共晶晶片、绿色LED共晶晶片和蓝色LED共晶晶片中的任一种。 
优选地，在所述将所述多颗半导体发光共晶晶片植入所述晶片装载空位，并通过粘结剂与所述基板电连接之后，还包括： 
去除所述多颗半导体发光共晶晶片上的所述扩张膜； 
对去除所述扩张膜后的多颗半导体发光共晶晶片进行表面清洁。 
进一步优选地，在所述对去除所述扩张膜后的多颗半导体发光共晶晶片进行表面清洁之后，还包括： 
对植入所述多颗半导体发光共晶晶片的所述基板进行电性检测。 
本发明提供的半导体显示面板的制造方法，采用LED倒装工艺，利用二次贴膜，直接将扩晶后的多颗半导体发光共晶晶片植入半导体显示面板基板上的相应晶片装载空位，同色发光晶片植入一次性完成，并且无需焊线，工艺简单稳定，尤其适用于要求小尺寸晶片间距的高分辨率的半导体显示面板的制造。 
附图说明
图1为本发明实施例提供的半导体显示面板的制造方法的流程图； 
图2为本发明实施例提供的半导体显示面板的制造步骤示意图之一； 
图3为本发明实施例提供的半导体显示面板的制造步骤示意图之二； 
图4为本发明实施例提供的半导体显示面板的制造步骤示意图之三； 
图5为本发明实施例提供的半导体显示面板的制造步骤示意图之四； 
图6为本发明实施例提供的半导体显示面板的制造步骤示意图之五 
图7为本发明实施例提供的半导体显示面板的制造步骤示意图之六； 
图8为本发明实施例提供的半导体显示面板的制造方法制备的半导体显示面板的示意图。 
具体实施方式
下面通过附图和实施例，对本发明的技术方案做进一步的详细描述。 
图1为本发明实施例提供的半导体显示面板的制造方法的流程图。本发明的制造方法包括如下步骤： 
步骤101，将具有多颗半导体发光共晶晶片的圆片的焊接面进行贴膜； 
具体的，如图2所示，将圆片的金属焊盘面进行贴膜，晶片的出光面向上。其中图2，及以下述图3至图6中，左图为俯视图，右图为侧视图。 
步骤102，对所述圆片进行激光切割，得到黏贴在贴膜上的多颗半导体发光共晶晶片； 
步骤103，将所述多颗半导体发光共晶晶片的发光面黏贴于扩张膜上； 
具体的，将晶片进行二次贴膜，具体为将晶片的出光面上黏贴上扩张膜， 
步骤104，去除所述多颗半导体发光共晶晶片的焊接面的贴膜； 
具体的，去除晶片的焊接面的贴膜，使晶片的电极露出。去除晶片焊接面贴膜之后，如图3所示， 
步骤105，对所述扩张膜进行扩晶操作，使所述多颗半导体共晶晶片之间的间隔与基板上的晶片装载空位的间隔相同； 
具体的，如图4所示，在前述步骤中的操作，没有改变晶片之间的位置和间距，在此步骤中，通过使用利用专用扩晶机精确控制扩张膜的涨缩尺寸，使晶片由原有的尺寸间隔a扩展至晶片间距为a+△a。优选的，扩晶后的晶片间隔为0.4mm以上。 
步骤106，将扩晶后的扩张膜粘贴在表面贴装设备的托盘上并将所述托盘的移动定位，使所述多颗半导体发光共晶晶片的位置与所述晶片装载空位相对应； 
具体的，如图5所示，扩张膜具有双面黏贴特性，从而可以将扩晶后的扩张膜粘贴在表面贴装设备的托盘上，以保证晶片间的平整度。 
对承载晶片的托盘进行移动定位，使多颗半导体发光共晶晶片的位置与 基板上的晶片装载空位一一相对应； 
步骤108，步进移动所述托盘，使扩晶后的所述多颗半导体发光共晶晶片步进接近所述基板上的晶片装载空位； 
具体的，如图5所示，将扩晶后的所述多颗半导体共晶晶片与所述基板上的晶片装载空位进行激光对准； 
步进移动所述托盘，当所述多颗半导体共晶晶片与所述基板上的晶片装载空位间的距离每缩小预订距离时，重新进行激光对准。 
步骤109，将所述多颗半导体发光共晶晶片植入所述晶片装载空位，并通过粘结剂与所述基板电连接。 
具体的，如图6所示，利用步进推拉所述托盘将所述多颗半导体发光共晶晶片一次性置入相应的晶片装载空位，并通过所述托盘对所述多颗半导体发光共晶晶片施加压力，使所述晶片通过粘结剂与所述基板电连接。 
步骤110，去除所述多颗半导体发光共晶晶片上的所述扩张膜； 
对去除所述扩张膜后的多颗半导体发光共晶晶片进行表面清洁。 
优选的，在步骤108之前还包括： 
步骤107，在所述晶片装载空位上的与所述晶片装载空位植入的半导体发光共晶晶片的焊盘的相应位置点涂所述粘结剂。 
具体的，粘结剂为银胶，或其他常温下即可生效的导电胶。 
在一个例子中，半导体显示面板上的多颗半导体发光共晶晶片具体为：红色LED共晶晶片、绿色LED共晶晶片和蓝色LED共晶晶片。他们均为直接焊接（Direct Attach,DA）共晶镜片。 
第一个圆片上的多颗半导体发光共晶晶片为红色LED共晶晶片，在将红色LED共晶晶片按照上述步骤101-110的方法植入晶片装载空位，并通过粘结剂与基板电连接之后，再分别对具有绿色LED共晶晶片的圆片和具有蓝色LED共晶晶片的圆片上的绿色LED共晶晶片和蓝色LED共晶晶片同样按照步骤101-110的方法植入晶片装载空位。 
在基板上的全部晶片装载空位都被植入相应的半导体发光共晶晶片之后半导体显示面板如图7所示，对植入所述多颗半导体发光共晶晶片的所述基板进行电性检测。在检查该半导体显示面板的光电参数及出光均匀性均是否达到要求。 
本发明实施例所提供的方法，适用于0.4mm及以上晶片间隔的半导体LED显示面板的制造中，通过采用LED倒装工艺，利用二次贴膜，直接将扩晶后的多颗半导体发光共晶晶片植入半导体显示面板基板上的相应晶片装载空位，同色发光晶片植入一次性完成，并且无需焊线，工艺简单稳定，尤其适用于要求小尺寸晶片间距的高分辨率的半导体显示面板的制造。 
以上所述的具体实施方式，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施方式而已，并不用于限定本发明的保护范围，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。 

Claims (8)

1.一种半导体显示面板的制造方法，其特征在于，所述方法包括：
将具有多颗半导体发光共晶晶片的圆片的焊接面进行贴膜；
对所述圆片进行激光切割，得到黏贴在贴膜上的多颗半导体发光共晶晶片；
将所述多颗半导体发光共晶晶片的发光面黏贴于扩张膜上；
去除所述多颗半导体发光共晶晶片的焊接面的贴膜；
对所述扩张膜进行扩晶操作，使所述多颗半导体共晶晶片之间的间隔与基板上的晶片装载空位的间隔相同；
将扩晶后的扩张膜粘贴在表面贴装设备的托盘上并将所述托盘的移动定位，使所述多颗半导体发光共晶晶片的位置与所述晶片装载空位相对应；
步进移动所述托盘，使扩晶后的所述多颗半导体发光共晶晶片步进接近所述基板上的晶片装载空位；
将所述多颗半导体发光共晶晶片植入所述晶片装载空位，并通过粘结剂与所述基板电连接。
2.根据权利要求1所述的方法，其特征在于，所述步进移动所述托盘，使扩晶后的所述多颗半导体发光共晶晶片步进接近所述基板上的晶片装载空位具体包括：
将扩晶后的所述多颗半导体共晶晶片与所述基板上的晶片装载空位进行激光对准；
步进移动所述托盘，当所述多颗半导体共晶晶片与所述基板上的晶片装载空位间的距离每缩小预订距离时，重新进行激光对准。
3.根据权利要求1所述的方法，其特征在于，在所述步进移动所述托盘，使扩晶后的所述多颗半导体发光共晶晶片步进接近所述基板上的晶片装载空位之前，还包括：
在所述晶片装载空位上的与所述晶片装载空位植入的半导体发光共晶晶片的焊盘的相应位置点涂所述粘结剂。
4.根据权利要求3所述的方法，其特征在于，所述粘结剂为银胶。
5.根据权利要求1所述的方法，其特征在于，所述将所述多颗半导体发光共晶晶片植入所述晶片装载空位，并通过粘结剂与所述基板电连接具体为：
利用步进推拉所述托盘将所述多颗半导体发光共晶晶片一次性置入相应的晶片装载空位，并通过所述托盘对所述多颗半导体发光共晶晶片施加压力，使所述晶片通过粘结剂与所述基板电连接。
6.根据权利要求1所述的方法，其特征在于，所述多颗半导体发光共晶晶片具体为：红色LED共晶晶片、绿色LED共晶晶片和蓝色LED共晶晶片中的任一种。
7.根据权利要求1所述的方法，其特征在于，在所述将所述多颗半导体发光共晶晶片植入所述晶片装载空位，并通过粘结剂与所述基板电连接之后，还包括：
去除所述多颗半导体发光共晶晶片上的所述扩张膜；
对去除所述扩张膜后的多颗半导体发光共晶晶片进行表面清洁。
8.根据权利要求7所述的方法，其特征在于，在所述对去除所述扩张膜后的多颗半导体发光共晶晶片进行表面清洁之后，还包括：
对植入所述多颗半导体发光共晶晶片的所述基板进行电性检测。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105720146A (zh) * 2016-04-12 2016-06-29 中山大学 一种大面积电极led阵列制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103400779B (zh) * 2013-07-09 2014-09-03 程君 一种半导体显示面板的制造方法
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CN105280556B (zh) * 2014-07-22 2018-02-23 环视先进数字显示无锡有限公司 一种led显示模组的集成方法
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CN105514223A (zh) * 2014-09-22 2016-04-20 程君 一种用于磊晶led显示模组的复合玻璃基板的制造方法
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CN108198775A (zh) * 2018-01-13 2018-06-22 蚌埠华特科技有限公司 一种芯片smt定位托盘及其使用方法
CN108288036A (zh) * 2018-01-13 2018-07-17 蚌埠华特科技有限公司 一种基于玻璃基板的指纹模组的生产方法
KR102697974B1 (ko) * 2018-11-21 2024-08-22 서울바이오시스 주식회사 발광 소자 및 이를 포함하는 발광 모듈
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CN112820659B (zh) * 2019-11-15 2022-09-16 山东浪潮华光光电子股份有限公司 一种砷化镓基led芯片的半切测试方法
CN112750714B (zh) * 2020-12-31 2021-11-23 深圳市思坦科技有限公司 Led芯片检测方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE518242T1 (de) 2002-03-12 2011-08-15 Hamamatsu Photonics Kk Methode zur trennung von substraten
JP4240362B2 (ja) * 2002-12-02 2009-03-18 住友電気工業株式会社 化合物半導体ウエハの劈開方法
JP4554901B2 (ja) * 2003-08-12 2010-09-29 株式会社ディスコ ウエーハの加工方法
CN101471407B (zh) * 2007-12-24 2012-02-29 亿光电子工业股份有限公司 薄型发光二极管装置的封装方法
CN101350160B (zh) * 2008-09-05 2010-06-02 铁道部运输局 发光二极管显示屏及其封装方法
TW201042720A (en) * 2009-05-20 2010-12-01 Chia-Fu Chang A wafer-level CSP processing method and thereof a thin-chip SMT-type light emitting diode
JP5860217B2 (ja) * 2011-03-04 2016-02-16 株式会社ディスコ レーザー加工装置
CN102593286A (zh) * 2012-03-14 2012-07-18 武汉迪源光电科技有限公司 一种大功率led的制备方法
US9231178B2 (en) * 2012-06-07 2016-01-05 Cooledge Lighting, Inc. Wafer-level flip chip device packages and related methods
CN102931328B (zh) * 2012-11-28 2016-05-11 北京半导体照明科技促进中心 一种led封装体的制作方法
CN103400779B (zh) * 2013-07-09 2014-09-03 程君 一种半导体显示面板的制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105720146A (zh) * 2016-04-12 2016-06-29 中山大学 一种大面积电极led阵列制备方法

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