CN103348069B - 用于材料应用的方法和基底 - Google Patents

用于材料应用的方法和基底 Download PDF

Info

Publication number
CN103348069B
CN103348069B CN201180060206.8A CN201180060206A CN103348069B CN 103348069 B CN103348069 B CN 103348069B CN 201180060206 A CN201180060206 A CN 201180060206A CN 103348069 B CN103348069 B CN 103348069B
Authority
CN
China
Prior art keywords
conductive
layer
synthetic
pitch
synthetic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180060206.8A
Other languages
English (en)
Other versions
CN103348069A (zh
Inventor
赛普里安·埃米卡·尤佐
埃米卡·奇克伍比
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CN103348069A publication Critical patent/CN103348069A/zh
Application granted granted Critical
Publication of CN103348069B publication Critical patent/CN103348069B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/71—Ceramic products containing macroscopic reinforcing agents
    • C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
    • C04B35/80—Fibres, filaments, whiskers, platelets, or the like
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C04B35/528—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
    • C04B35/532—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components containing a carbonisable binder
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • C04B37/006—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3241—Chromium oxides, chromates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/36—Glass starting materials for making ceramics, e.g. silica glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/404—Refractory metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/422—Carbon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/422—Carbon
    • C04B2235/425—Graphite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/52—Constituents or additives characterised by their shapes
    • C04B2235/5208—Fibers
    • C04B2235/5216—Inorganic
    • C04B2235/522—Oxidic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/363—Carbon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4935—Heat exchanger or boiler making
    • Y10T29/49355—Solar energy device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49616—Structural member making
    • Y10T29/49623—Static structure, e.g., a building component
    • Y10T29/49629—Panel

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

提供了用于制造合成材料的方法和装置。所述合成物能够通过将粘合剂和物理性质增强材料相混合以形成混合物而被形成。所述粘合剂能够是沥青，诸如中间相沥青。所述物理性质增强材料能够是玻璃纤维。所述混合物能够通过层压过程、稳定/交联过程以及碳化而被处理。所述合成材料能够被应用在电子元件和绿色技术的领域中，诸如光伏电池的基底。

Description

用于材料应用的方法和基底
对相关申请的交叉引用
本申请要求来自于2010年10月15日提交的并且标题为“用于材料应用的新颖的基底”的序列号为61/455,060的美国临时专利申请和2010年10月15日提交的并且标题为“用于光伏应用的新颖的基底”的序列号为61/455,061的美国临时专利申请的优先权，其由此为了全部的目的而被以引用的方式整体并入此处。
技术领域
本发明涉及材料科学的领域。更特别地，本发明涉及用于制造新颖的材料的合成物的领域。
背景技术
典型地，工业废弃物是不需要的并且经常被置之不用。近年来，环境保护和能源节约的意识的上升导致人们寻求方法以更好地使用资源并减少浪费。包括废物防止、废物最小化、废物再利用、废物再循环、能量回收和废物处理的方法和策略已经被开发，用于废物管理。在所述废物管理方法和策略之中，废物再利用是有吸引力的废物管理方法中的一个，因为其包括将不需要的废物转化成其他有用的产品。废物再利用被描述为变废为金。因此，如下是期望的：开发用于将废物转化并且合并成有用的产品和材料的方法和装置。
发明内容
提供了用于制造合成材料的方法和装置。所述合成物能够通过将粘合剂和物理性质增强材料相混合以形成混合物而被形成。所述粘合剂能够是沥青，诸如中间相沥青。所述物理性质增强材料能够是纤维玻璃。所述混合物能够通过层压工艺、稳定化/交联工艺以及碳化而被处理。所述合成材料能够被应用在电子元件和绿色技术的领域中，诸如光伏电池的基底。
在第一方面中，制造合成材料的方法包括基于所述合成材料的所选择的材料性质选择要被添加的第一材料，将所述第一材料与粘合剂材料相结合以形成混合物，以及稳定或者交联所述粘合剂材料，以便形成所述合成材料。
在一些实施例中，所述粘合剂材料包括沥青、煤灰或其组合。在其他的实施例中，所述沥青包括中间相沥青。在一些其他的实施例中，所选择的材料性质包括导电率或柔性。在一些实施例中，所述第一材料包括玻璃纤维。在其他实施例中，所述方法进一步包括形成层压制品。在一些其他的实施例中，所述方法进一步包括将所述混合物碳化。在一些实施例中，所述碳化包括在700℃之上的温度下加热所述混合物。在其他实施例中，所述方法进一步包括在稳定或交联所述粘合剂材料之前添加硫磺、有机硫、有机金属化合物、氧化物的毫微颗粒或金属。
在第二方面中，合成材料包括由沥青和材料性质增强材料形成的层压制品。在一些实施例中，所述沥青包括中间相沥青。在其他实施例中，所述沥青包括新中间相沥青。在一些其他实施例中，所述材料性质增强材料包括玻璃纤维、氧化物毫微颗粒、金属氧化物、金属毫微颗粒或其组合。在一些其他实施例中，所述材料性质增强材料包括导体。在一些实施例中，所述导体包括金属或合金。在其他实施例中，所述材料性质增强材料包括煤灰、磨碎的玻璃、磨碎的石英、玻璃珠、玻璃纤维、石英纤维或其组合。在一些其他实施例中，所述材料性质增强材料包括绝缘体。
在第三方面中，形成合成材料的方法包括将玻璃纤维材料与粘合剂材料组合以形成混合物，层压所述混合物以形成层压制品，在第一温度下稳定或交联所述粘合剂材料，并且在第二温度下碳化所述层压制品。
在一些实施例中，所述粘合剂材料包括沥青。在其他实施例中，所述合成材料包括导电材料，所述导电材料形成与具有比所述导电层的导电率更低的导电率的材料的层相结合的导电层。
附图说明
图1示出了根据一些实施例的制造材料的方法。
图2A和图2B示出了根据一些实施例的用于制造基底材料的装置。
图3示出了根据一些实施例的光伏电池。
图4示出了根据一些实施例的光伏电池制造方法。
图5示出了根据一些实施例的中间相沥青板制造方法。
图6示出了根据一些实施例的中间相沥青板制造方法。
具体实施方式
在本发明的一些方面中，廉价的和/或重复利用的工业废弃物被用于制造各种材料。所述材料在工业中具有广泛的应用。例如，所述材料能够被用作光伏电池的基底的一部分。在此处被使用的工业废弃物包括来自石油化学工业的沥青和来自煤炭工业以及燃煤发电厂的煤灰。上面提及的废产物（诸如沥青和煤灰）能够被用做用于柔性的和非柔性的薄膜光伏电池的基底材料。上面所列出的工业废弃物是被用于说明目的的实例。其他工业废产物是可适用的。
在本发明的一些其他方面中，使用各向同性的、各向异性的中间相沥青、石墨化沥青或从沥青（包括商业上可获得的沥青）获得的液晶作为粘合剂或粘结材料与其他的含碳的和或不含碳的材料形成材料和合成结构。
在下文中，根据一些实施例公开了用于制造材料的方法和装置。图1示出了根据一些实施例的制造所述材料的方法100。所述方法100能够包括添加期望的/预先选择的材料、用所述添加的材料生成层压制品、稳定和/或交联粘合剂材料、以及碳化。方法100的所述步骤是可选择的。附加的步骤能够被添加到所述方法100。执行方法100的所述步骤的序列能够按照任何顺序。下面说明了执行方法100的更多的细节。所述方法100能够从步骤102开始。
在步骤104处，基于所述材料的所选择的材料性质添加选择的材料/成分。在一些实施例中，通过喷射、辊涂、浸渍、刷涂或其组合用粘合剂材料浸渍织成的玻璃纤维材料（基于二氧化硅和/或基于碳的材料）。与所述粘合剂材料相组合的玻璃纤维材料形成粘合剂材料涂敷的玻璃纤维材料。本领域的普通技术人员理解：其他的方法能够被用于组合所述粘合剂材料和所述添加的材料以获得预定的物理交互作用和性质，诸如混合、掺和和按压。在其他实施例中，非织成的玻璃纤维材料被用于与所述粘合剂材料相组合。此处所描述的粘合剂材料能够是沥青、煤灰或能够被用作粘合剂材料的任何其他材料。本领域的普通技术人员理解：所述粘合剂材料能够是具有粘附的性质的任何材料，诸如粘结剂、胶水、水泥和涂料。所述粘附的性质包括在预先定义的条件（诸如温度、压力、溶剂、共反应物或其组合）下显示这样的性质的材料。例如，当粘合剂材料在诸如10 psi的压力下证明了所述粘附的性质，并且在正常的大气压（例如，1 atm）下没有粘合性时，所述粘合剂材料处于本发明的范围内。能够基于所述产品的预先选择的性质在步骤104处添加各种其他成分。在下面的段落中讨论了所述实施例中的一些。
在步骤106处，生成包括所述添加的材料的层压制品。在一些实施例中，上面形成的粘合剂材料涂敷的玻璃纤维材料被辊轧或者被挤压以形成层压制品。在一些实施例中，所述层压制品的厚度比20微米更薄。在一些其他的实施例中，所述层压制品的厚度比2000微米更厚。在一些其他的实施例中，所述层压制品的厚度处在20微米和2000微米之间。在一些实施例中，所述层压制品的宽度处在10cm和1m之间的范围内，以便层压制品材料板能够适合于进一步切割。在一些其他的实施例中，所述层压制品的宽度处在0.5cm和3cm之间的范围内，以便为准备好使用而形成电池/矩形形式的基底。本领域的普通技术人员将理解：取决于所述基底的所选择的用途，所述层压制品的任何宽度是可应用的。
在一些实施例中，所述层压制品包括具有由中间相沥青层的顶面和底面上的玻璃纤维层夹在中间的中间相沥青层的结构。例如，通过如下方式形成夹层结构/层压制品：准备具有1m²的大小和3mm的厚度的玻璃纤维板的第一层，在所述第一层的顶部上添加具有1m²的大小和5mm的厚度的粘合剂材料（诸如中间相沥青）的第二层，添加具有1m²的大小和2mm的厚度的玻璃纤维板的第三层，以及用压力挤压机挤压以形成具有7mm的厚度的夹层的层压制品。在其他实施例中，所述层压制品包括由两个沥青层夹在中间的玻璃纤维的层。在一些实施例中，所述沥青是低分子量新中间相沥青或者是任何其他的粘合剂。
在步骤108处，在氧气环境中在软化温度以下稳定或交联所述粘合剂材料以形成处理过的材料。在一些实施例中，所述温度处在200℃ 到 450℃的范围内。本领域的普通技术人员理解：其他的温度范围是可应用的。在一些实施例中，所述温度接近所述软化温度。在一些其他实施例中，所述温度高于所述软化温度。
在步骤110处，所述处理过的材料被加热处理以碳化所述混合物。在一些实施例中，步骤110的温度处在800℃ 到 1700℃的范围内。在一些其他实施例中，所述温度处在700℃到 3000℃的范围内。在一些实施例中，在惰性环境（诸如氮气）下，用在2psi和40psi之间的压力执行所述步骤110。在一些实施例中，在降温步骤期间保持所施加的压力，以致所述板结构的收缩和翘曲能够被最小化。所述方法100能够在步骤112处停止。
针对不同的应用选择不同的材料性质，诸如热的、声音、电的、振动的、信号和光传导性/绝缘、材料强度以及材料耐久性。各种材料能够被添加在所述合成材料中以增强所述预定的性质。在一些实施例中，切碎的或微粒的导电材料被用作增强剂或材料，以致能够增强所生产的材料的导电率。在一些其他实施例中，切碎的或微粒的非导电材料被用作增强剂或材料，以致所生产的材料的绝缘的性质被增强。在一些实施例中，被合并的材料包括煤灰、磨碎的玻璃、磨碎的石英、玻璃珠、切碎的玻璃纤维、切碎的石英纤维云母片、陶瓷粉末/珠/片以及不含碳的材料。在一些其他实施例中，被合并的材料包括导电金属或金属合金粉末、片或纤维。在一些实施例中，被合并的材料包括毫微颗粒，诸如金属毫微颗粒和金属氧化物毫微颗粒（例如，Cr2O3毫微颗粒被合并作为用于成核（neucleation）的催化剂）。本领域的普通技术人员理解：任何导电材料能够被添加，包括铜、铬、碳粉或碳片、石墨片或其组合。
在一些实施例中，选择基底材料（根据所述方法100生产的材料）的电阻率。在一些实施例中，在所述交联步骤之前将小于5%的量的具有或不具有金属氧化物或金属化合物的硫磺或有机硫化合物掺合到中间相沥青粘合剂中，以致在所述高温碳化步骤期间形成玻璃碳。能够被添加例如以控制纹理或强度并且增加或降低所述基底材料的电阻率的任何其他材料在本发明的范围内。
在下文中，公开了用于制造所述基底材料的装置。图2A和图2B示出了根据一些实施例的用于制造所述基底材料的装置200和211。反应物（诸如玻璃纤维216和粘合剂材料218）能够分别地通过漏斗210和212被添加到混合装置202中。所述反应物能够是固体和/或液体形式的溶剂和/或合成物。在一些实施例中，所述混合装置202能够是挤压机。所述混合装置202能够混合由混合器217（诸如螺旋式混合器）添加的材料。本领域的普通技术人员理解：任何数量的漏斗能够被包括在所述混合装置 202中。能够在空气气氛、惰性气氛（诸如N2和Ar）或加压的气氛（诸如2-10 psi 和1-3 atm）下执行所述混合装置202和/或所述装置200。所述漏斗210和212能够是气密的腔室、顶部敞开的腔室、有铰链的顶部开放的腔室，用于诸如气体、液体和超临界流体的固体和流体。所述混合装置202能够包括允许输出材料201以期望的形式和厚度（诸如1mm - 10mm）被成型的模具214。在一些实施例中，所述装置200能够包括辊204，诸如拉辊。所述辊204能够使用其滚轮和带子将所述输出材料201压缩至期望的厚度，诸如20到500微米。能够使用此处所描述的所述混合装置202和/或所述辊204以批量模式或根据所述层压制品的厚度的卷至卷方式生产在图1中所描述的层压制品。所述输出材料201能够在烤炉206中以预定的温度被加热，诸如用于稳定或交联所述粘合剂材料的200℃-450℃和用于碳化所述材料的600℃-1700℃。在一些实施例中，在所述稳定和碳化步骤期间，受控的流体环境被用于将所述压力强加在所述基底的两个主要侧面上。例如，所述烤炉/熔炉206能够排有微小的孔205（具有多个加热区域），其中与所述熔炉的宽度或长度相比，炉壁内部的上部和下部之间的间隙是可忽略的。在一些实施例中，在所述碳化过程中，惰性气体通过所述烤炉/熔炉206中的层压制品的两侧上的所述微小的孔205而被引入到所述烤炉/熔炉206中，并且所述流体的压力被控制为在所述层压制品（输出材料201）的两侧上发出，以致所述流体（诸如惰性气体）阻止所述层压制品板接触所述烤炉/熔炉206的主要侧面。在一些实施例中，所述烤炉206的流体出口203的间隙被减小，以致所施加的流体能够在所述交联、碳化或其组合期间被用于将所述压力强加在所述基底上。在一些实施例中，所述装置 200能够包括一个或多个冷却装置 207。所述输出材料201能够被切割器208切割并储存成预定的尺寸，诸如1m²。所述切割器208能够是压力压切机。
与突出式装配装置 202相似，图2B显示了拉挤成型装置220。所述拉挤成型装置220能够连续不断地制造合成材料。纤维板226能够通过沥青熔池224而被拉伸，其通过沥青源222而被供应。与在图2A中描述的过程和其关联的文本相似，图2B中的输出材料201能够进一步被所述辊204紧压、被所述烤炉206加热、被所述冷却器 207降温、以及被所述切割器208确定尺寸。
应用
通过使用根据一些实施例在此处所公开的方法和装置而被制造的材料能够被应用在各种应用中并且以各种方式被使用。例如，在一些实施例中，多于一个的层压制品能够被堆叠并且通过中间相沥青粘合剂的薄层而被结合。在所述交联步骤之前，所述板的方位能够是彼此平行的、斜交的、或者相对于彼此处于任何选择的方位中。单个的板或堆叠的板能够通过已知的方法被切割并且在适当的模中被形成，用于制造预先选择的结构或形状，诸如太阳能电池的基底。
在一些实施例中，选择交替式的导电层结构，其能够通过使用更绝缘的玻璃碳粘合剂将高导电的层压制品彼此结合而被制造。所形成的具有不同的导电率的交替层的材料能够被用作用于低温或高温应用的电容器。例如，所述电容器能够具有包括高绝缘层的第一层、导电层的第二层、高绝缘层的第三层、导电层的第四层和高绝缘层的第五层的结构。通过此处所公开的方法和装置而被制造的基底能够被用作用于光伏电池的柔性基底、电磁屏蔽、用于电子器具的外壳和建筑学上的应用。
光伏电池
在下文中，根据实施例提供了使用上面制造的材料/基底来制造光伏电池(PV)的方法。
传统上，钠钙玻璃和不锈钢板被用于制造薄膜太阳能电池。问题与使用钠钙玻璃或不锈钢板作为基底的光伏电池相关联。所述钠钙玻璃基底是易碎的，其增加了基底缺陷和PV电池故障的可能性。此外，所述钠钙玻璃基底是刚性的并且不是柔性的，其将其应用限制于仅平坦的表面。此外，所述钠钙玻璃基底是电绝缘体并且是昂贵的，其大约是PV制造成本的40%。此外，钠钙玻璃基底的Tg（玻璃转变温度）限制了硒化温度。将用辊轧的不锈钢板作为基底的典型的PV电池与用钠钙玻璃作为基底的PV电池相比较，所述辊轧的不锈钢板基底具有比所述钠钙玻璃基底更柔性且导电的结构。然而，就所述不锈钢基底具有更粗糙的表面而言，所述辊轧的不锈钢板基底比所述钠钙玻璃基底更差。此外，被包含在所述典型的不锈钢基底中的金属能够是到CIGS半导体的金属杂质（诸如Fe、Ni和 Se）的源，因为所包含的金属（诸如Fe、Ni和液体Se）能够扩散通过Mo晶粒边界以使电池短路。特别地，在惰性气氛下典型的硒化温度处在500℃ 和750℃之间。在这样的温度下， Fe 和Ni的扩散率变得非常迅速并且动力学支持Fe扩散通过Mo晶粒之间的开放的晶粒边界。同样地，在此高温下，所述Mo之上的CIS（铜铟硒化物）或CIGS（铜铟镓（di）硒化物：四面体键合的半导体）层中熔化的Se扩散通过所述Mo晶粒边界以腐蚀所述Mo下方的不锈基底，使所述太阳能电池短路。这些缺陷典型地导致电池具有大大降低的效率并且所述基底经常被废弃。高废弃损失和伴随的低效率电池产生昂贵的太阳能电池，其不是商业上可行的。
在下文中，根据实施例提供了使用上面制造的材料/基底制造光伏电池(PV)的方法。
公开了根据一些实施例的用于制造光伏电池的方法和物质。在一些实施例中，所述光伏电池包括合成的或非合成的含碳的基底，在其中各向同性的或各向异性的中间相沥青、新中间相沥青或其组合被用作粘合剂、粘结材料或用于制造平面的和非平面的板的精整材料,用以制造薄膜太阳能电池。在下文中，根据一些实施例提供了具有使用此处所公开的材料的基底的光伏电池。
图3示出了根据一些实施例的光伏电池300。在一些实施例中，所述光伏电池300包括基底302、粘合层304、Mo层306、吸收器层308、缓冲层310（诸如CdS层）和TCO（透明的导电氧化物）层312。所述光伏电池300的基底302能够包括中间相/新中间相沥青构架基底。在一些实施例中，所述基底302的厚度能够是20微米到1mm或更厚。在一些其他实施例中，所述基底302的厚度能够比5mm更厚。本领域的普通技术人员理解:任何厚度的基底302是可应用的。通过基于应用添加预先选择的填料,所述基底302的物理和材料性质是可调节的。用于所述基底302的刚性/柔性、导电率、热膨胀的程度和表面粗糙度全部是可调节的和可控制的。例如，能够通过在制造过程期间将导电材料、催化剂、毫微颗粒和金属氧化物（例如，填料）添加到所述粘合剂材料中来制造导电基底302。当想要绝缘基底302时，能够通过在制造过程期间将绝缘材料添加到所述粘合剂材料来制造所述绝缘基底。相似地，能够通过调节所述粘合剂材料的硬度或刚度或者要被添加的材料的类型来制造柔性的基底302。使用此处所公开的方法和材料制造的基底302能够比通过典型的方法制造的基底承受更高的硒化温度范围。由于使用此处所公开的方法和材料制造的基底302已最小化到没有不期望的金属杂质，当在高温下加热所述光伏电池时能够避免所述电池的短路。
在一些实施例中，所述光伏电池300包括粘合层304。所述粘合层304能够是Cr层并且通过溅射和其他已知的方法被涂敷在所述基底302的顶部上。所述粘合层304的厚度能够在20nm到1000nm之间。本领域的普通技术人员理解:任何厚度的粘合层304是可应用的，诸如2mm或更厚。
在一些实施例中，所述光伏电池300包括Mo层306。所述Mo层306能够处在所述粘合层304的顶部上。所述Mo层306能够充当后触点并且将大部分未被吸收的光反射回所述吸收器层308（诸如CIGS层）中。所述Mo层306能够是通过PVD（物理气相沉积, 诸如溅射和蒸发以及其他已知的方法，诸如CVD（化学气相沉积））沉积的薄膜。所述Mo层306的厚度能够在100nm到2000nm之间。本领域的普通技术人员理解:任何厚度的Mo层306是可应用的，诸如2微米或更厚。在一些实施例中，多个Mo层306能够被包括以获得预定义的Mo薄膜厚度。在一些实施例中，薄层Mo合金（诸如2nm到10nm MoSi层）被插入到所述Mo层压制品中以修正被涂敷在所述合金层之上的Mo薄膜的晶粒结构。
在一些实施例中，所述光伏电池300包括吸收器层308，诸如CIGS层或CIG/CIS层。能够通过在所述Mo层306上沉积/溅射/蒸发前体材料/层(诸如Cu、In、Ga或其组合)随之硒化来形成所述吸收器层308。能够使用形成CIGS层的典型方法形成所述吸收器。在一些实施例中，能够在过量硒环境中(诸如H2Se或Se(g)) 在500℃和800℃的温度之间持续5分钟到120分钟在惰性环境中在所述硒化步骤之前用氟化钠的薄层涂敷所述前体材料/层。
在一些实施例中，所述光伏电池300包括缓冲层310。所述缓冲层310能够是n-型CdS。能够通过典型的方法将所述缓冲层涂敷在所述吸收器层308上。在一些实施例中，所述光伏电池300包括透明的导电氧化物层(TCO) 312。所述TCO 层312能够被掺杂有Al。所述TCO 层能够收集电子并且将电子移出所述电池同时吸收尽可能少的光。在一些实施例中，所述光伏电池300包括所述TCO层312上的电接线元件314，用于传导电子信号和电流。在一些实施例中，能够用聚合物薄膜层压所述光伏电池300以形成柔性的太阳能电池。
图4示出了根据一些实施例的光伏电池制造方法400。所述方法400能够从步骤402开始。在步骤404处，粘合层被涂敷在基底上。能够使用上面所描述的方法制造所述基底。在一些实施例中，所述粘合层包含Cr或Cr板/层。在一些实施例中，所述基底是中间相粘结基底。所述中间相粘结基底能够是所述光伏电池的底电极。在一些其他实施例中，所述基底是合成的含碳基底。在其他实施例中，所述基底是非合成的含碳基底。所述基底能够是各向同性的或各向异性的中间相沥青、新中间相沥青或其组合。本领域的普通技术人员理解：粘合的或在预定的条件下粘合的其他材料是可应用的。在步骤406处，Mo层被涂敷在所述粘合层上，其能够将所述基底与吸收器层结合。在步骤408处，前体材料（诸如Cu、In、Ga和Se（铜铟镓硒化物））被涂敷在所述Mo层上。在步骤410处，硒化被执行。在所述硒化的过程中，能够在高温以气相（例如作为H2Se或元素的Se）供应Se，并且通过吸收和随后的扩散变得将所述Se并入到所述薄膜中。通过执行所述硒化，能够形成所述光伏电池的吸收器。在步骤412处，执行在所述吸收器（CIGS）层上形成CdS层。在步骤414处，TCO的层被涂敷在所述CdS层上。在步骤416处，在所述TCO上制造接线元件。所述方法400能够在步骤418停止。在下文中，提供了能够在上面描述的方法400中被用作基底的形成中间相沥青板的方法。
图5示出了根据一些实施例的中间相沥青板制造方法500。所述方法500从步骤502开始。在步骤504处，沥青被添加。所述沥青能够是来自煤的来自阿什兰（Ashland）240或260（石油沥青）的可石墨化的各向同性含炭沥青。本领域的普通技术人员理解：所述沥青能够来自于各种源，诸如直接来自于工业废弃物。在步骤506处，用所述沥青执行溶剂萃取和热处理。在步骤508处，中间相或新中间相材料被形成。在一些实施例中，所述中间相或新中间相材料包含多于50%成分的液晶。在步骤510处，所述中间相或新中间相材料被干燥并且执行磨碎。在步骤512处，在250℃到300℃的惰性环境气氛下执行板挤压。在步骤514处，通过在250℃到300℃加热所述板来执行板稳定。在步骤516处，在600℃到3000℃的惰性环境下执行高温处理。所述方法500能够在步骤518停止。在下文中，提供了将填料材料并入所述基底材料/中间相板材料中的方法。
图6示出了根据一些实施例的中间相沥青板制造方法600。所述方法600从步骤602开始。在步骤604处，沥青被添加。所述沥青能够是来自煤的来自阿什兰（Ashland）240或260（石油沥青）的可石墨化的各向同性含炭沥青。本领域的普通技术人员理解：所述沥青能够来自于各种源，诸如直接来自于工业废弃物。在步骤606处，执行溶剂萃取和热处理。在步骤608处，形成中间相或新中间相材料。在一些实施例中，所述中间相或新中间相材料包含多于50%成分的液晶。在步骤610处，所述中间相或新中间相材料被干燥并且执行磨碎。在步骤611处，填料材料被添加。能够基于预先选择的所述基底（产品）的物理/化学性质选择要被添加的填料。在步骤612处，在250℃到300℃的惰性环境气氛下执行板挤压。在步骤614处，通过在250℃到300℃加热所述板来执行板稳定。在步骤616处，形成低熔点和/或低分子量中间相沥青，其能够被用来层压多个板材料。所述方法600能够在步骤618停止。
上面所描述的所有步骤是可选择的。能够按照任何顺序执行被包括在上面的方法中的步骤的序列。附加的步骤能够被添加。
能够在制造用于工业应用（诸如太阳能电池的基底）的各种材料中利用本申请。在操作中，具有用此处所提供的方法制造的柔性基底的光伏太阳能电池能够被弯曲成期望的形状并且应用在非平坦的表面上。
此处所使用的术语沥青能够包括焦油、沥青烯、粘弹性的聚合物、柏油、地沥青、二硫化碳和树脂。在一些实施例中，所选择的粘合剂（诸如沥青）或所添加的材料的高粘度提供了将金属颗粒保持在所述基底中并且防止它们使所述PV电池短路的功能。在一些实施例中，使用此处所公开的方法和合成物制造的材料/基底能够被用作热绝缘装置，如测温漆，其能够被安装在或涂敷在建筑结构（诸如房屋或谷仓）的屋顶或墙壁上或者作为建筑结构（诸如房屋或谷仓）的屋顶或墙壁的一部分。在一些实施例中，所述材料/基底包括具有高导电率的导电材料，由此所述材料/基底能够被用于传导电流。在一些其他实施例中，所述材料/基底具有热和/或光的高反射率，并且所述基底和所述材料能够被用作建筑结构上的镜子。此处所描述的镜子能够反射/绝缘/隔绝热、光或其组合。在一些实施例中，所述基底/材料能够反射多于90%的入射光或所选择的光的波长，诸如IR和UV。
已经关于合并了细节的特定的实施例描述了本发明，以有助于理解本发明的构造和操作的原理。此处对特定的实施例和其细节的这样的引用不是意在限制附于此的权利要求的范围。如下对本领域技术人员而言将是显而易见的：可以在被选择用于说明的实施例中进行其他各种修改，而不背离如由权利要求所限定的本发明的精神和范围。

Claims (17)

1.一种制造合成材料的方法，包括：
i)形成一个或多个导电层压制品，包括：
a)基于所述合成材料的所选择的材料性质选择要被添加的第一材料；
b)将所述第一材料与粘合剂材料相结合，其中所述粘合剂材料包括沥青；以及
c)稳定或交联所述粘合剂材料；
ii)通过使用绝缘的玻璃碳粘合剂将所述导电层压制品彼此结合而形成交替式的导电层结构，以便形成合成材料；
其中所述合成材料包括形成导电层的导电材料，所述导电层与具有低于所述导电层的导电率的导电率的材料的层相结合；
其中，所述第一材料进一步包括切碎的或微粒的非导电材料，其被用于调节所述合成材料的导电率。
2.根据权利要求1所述的方法，其中，所述沥青包括新中间相沥青。
3.根据权利要求1所述的方法，其中，所述沥青包括中间相沥青。
4.根据权利要求1所述的方法，其中，所述选择的材料性质包括导电率或柔性。
5.根据权利要求1所述的方法，其中，所述第一材料包括玻璃纤维。
6.根据权利要求1所述的方法，进一步包括在稳定或交联所述粘合剂材料之后碳化所述层压制品。
7.根据权利要求6所述的方法，其中，所述碳化包括：在700℃以上的温度中加热所述层压制品。
8.根据权利要求1所述的方法，进一步包括：在稳定或交联所述粘合剂材料之前添加硫磺。
9.一种包括交替式的导电层结构的合成材料，所述交替式的导电层结构具有通过使用绝缘的玻璃碳粘合剂而被彼此结合的导电层压制品，其中所述导电层压制品由沥青层以及材料性质增强材料形成；
其中所述合成材料包括形成导电层的导电材料，所述导电层与具有低于所述导电层的导电率的导电率的材料的层相结合；
其中，所述合成材料包括第一材料，并且所述第一材料进一步包括切碎的或微粒的非导电材料，其被用于调节所述合成材料的导电率。
10.根据权利要求9所述的合成材料，其中，所述沥青包括中间相沥青。
11.根据权利要求9所述的合成材料，其中，所述沥青包括新中间相沥青。
12.根据权利要求9所述的合成材料，其中，所述材料性质增强材料包括玻璃纤维、氧化物毫微颗粒、金属氧化物、金属毫微颗粒或其组合。
13.根据权利要求9所述的合成材料，其中，所述材料性质增强材料包括导体。
14.根据权利要求13所述的合成材料，其中，所述导体包括金属或合金。
15.根据权利要求9所述的合成材料，其中，所述材料性质增强材料包括煤灰、磨碎的玻璃、磨碎的石英、玻璃珠、玻璃纤维、石英纤维或其组合。
16.根据权利要求9所述的合成材料，其中，所述材料性质增强材料包括绝缘体。
17.一种形成合成材料的方法，包括
a)将玻璃纤维材料与粘合剂材料相组合以形成混合物；
b)层压所述混合物以形成层压制品；
c)在第一温度稳定或交联所述粘合剂材料；
d)在第二温度碳化所述层压制品；以及
e)通过使用绝缘的玻璃碳粘合剂将所述层压制品彼此结合而形成交替式的导电层结构，以便形成合成材料；
其中所述合成材料包括形成导电层的导电材料，所述导电层与具有低于所述导电层的导电率的导电率的材料的层相结合；
其中，所述合成材料包括第一材料，并且所述第一材料进一步包括切碎的或微粒的非导电材料，其被用于调节所述合成材料的导电率。
CN201180060206.8A 2010-10-15 2011-10-14 用于材料应用的方法和基底 Expired - Fee Related CN103348069B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US45506110P 2010-10-15 2010-10-15
US45506010P 2010-10-15 2010-10-15
US61/455,061 2010-10-15
US61/455,060 2010-10-15
US61/455061 2010-10-15
US61/455060 2010-10-15
PCT/US2011/056480 WO2012051602A2 (en) 2010-10-15 2011-10-14 Method and substrates for material application

Publications (2)

Publication Number Publication Date
CN103348069A CN103348069A (zh) 2013-10-09
CN103348069B true CN103348069B (zh) 2018-01-16

Family

ID=45933031

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201180060206.8A Expired - Fee Related CN103348069B (zh) 2010-10-15 2011-10-14 用于材料应用的方法和基底
CN201180060472.0A Expired - Fee Related CN103404015B (zh) 2010-10-15 2011-10-14 用于制作光伏电池的方法和衬底

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201180060472.0A Expired - Fee Related CN103404015B (zh) 2010-10-15 2011-10-14 用于制作光伏电池的方法和衬底

Country Status (6)

Country Link
US (4) US9184323B2 (zh)
EP (2) EP2628187A4 (zh)
JP (2) JP6126992B2 (zh)
CN (2) CN103348069B (zh)
AU (2) AU2011315847A1 (zh)
WO (2) WO2012051602A2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9184323B2 (en) * 2010-10-15 2015-11-10 Cyprian Emeka Uzoh Method and substrates for making photovoltaic cells
JP6467089B1 (ja) * 2018-06-13 2019-02-06 学校法人東京理科大学 モスアイ転写型、モスアイ転写型の製造方法及びモスアイ構造の転写方法
US10727428B1 (en) * 2019-02-01 2020-07-28 Natioinal Technology & Engineering Solutions Of Sa Organic-semiconducting hybrid solar cell
CN114763480B (zh) * 2021-01-13 2024-03-12 中国石油化工股份有限公司 一种中间相沥青及其制备方法和应用
CN116041064B (zh) * 2023-01-09 2023-08-29 济南万瑞炭素有限责任公司 一种骨料预处理预焙阳极及其制备方法
US11958308B1 (en) 2023-05-31 2024-04-16 G13 Innovation In Production Ltd Thermal paper, and methods and systems for forming the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4923648A (en) * 1984-06-26 1990-05-08 Mitsubishi Kasei Corporation Process for the production of pitch-type carbon fibers
US5225070A (en) * 1991-07-29 1993-07-06 Clemson University Oxygenated pitch and processing same
WO2001002632A1 (en) * 1999-07-01 2001-01-11 University Of Leeds Highly oriented mesophase pitch-based graphite tape and bulk carbon material
US6334895B1 (en) * 1998-07-20 2002-01-01 The University Of Wyoming Research Corporation System for producing manufactured materials from coal combustion ash

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919387A (en) 1972-12-26 1975-11-11 Union Carbide Corp Process for producing high mesophase content pitch fibers
US3791097A (en) 1973-01-19 1974-02-12 Tremco Mfg Co Method of detecting and repairing a structural roof damaged by subsurface moisture
US4208267A (en) 1977-07-08 1980-06-17 Exxon Research & Engineering Co. Forming optically anisotropic pitches
US4184942A (en) 1978-05-05 1980-01-22 Exxon Research & Engineering Co. Neomesophase formation
US4341621A (en) * 1979-03-26 1982-07-27 Exxon Research & Engineering Co. Neomesophase formation
US4331620A (en) 1980-02-25 1982-05-25 Exxon Research & Engineering Co. Process for producing carbon fibers from heat treated pitch
US4528087A (en) * 1982-03-09 1985-07-09 Mitsubishi Petrochemical Co., Ltd. Process for producing mesophase pitch
US4465586A (en) 1982-06-14 1984-08-14 Exxon Research & Engineering Co. Formation of optically anisotropic pitches
US4443324A (en) 1982-06-14 1984-04-17 Exxon Research And Engineering Co. Low melting mesophase pitches
JPS5982466A (ja) * 1982-10-27 1984-05-12 信越化学工業株式会社 カ−ボン繊維の表面改質方法
JP2566589B2 (ja) * 1987-09-18 1996-12-25 三菱化学株式会社 炭素系複合成形体原料の製造方法
US4986943A (en) * 1989-02-28 1991-01-22 The Aerospace Corporation Method for oxidation stabilization of pitch-based matrices for carbon-carbon composites
US5259947A (en) * 1990-12-21 1993-11-09 Conoco Inc. Solvated mesophase pitches
US5325860A (en) 1991-11-08 1994-07-05 Mayo Foundation For Medical Education And Research Ultrasonic and interventional catheter and method
DE4333407C1 (de) * 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
JP3031197B2 (ja) * 1994-04-11 2000-04-10 三菱化学株式会社 ピッチ系炭素繊維
US5501906A (en) * 1994-08-22 1996-03-26 Minnesota Mining And Manufacturing Company Ceramic fiber tow reinforced metal matrix composite
JP3651932B2 (ja) * 1994-08-24 2005-05-25 キヤノン株式会社 光起電力素子用裏面反射層及びその形成方法並びに光起電力素子及びその製造方法
JP2984595B2 (ja) 1996-03-01 1999-11-29 キヤノン株式会社 光起電力素子
JPH1036677A (ja) * 1996-07-12 1998-02-10 Amoco Corp 充填剤入り熱可塑性ｂ段階ピッチプレフォームとそれから作った複合体
JPH1171190A (ja) * 1997-08-26 1999-03-16 Toshiba Ceramics Co Ltd 炭化珪素−シリコン複合材料の製造方法
US6121540A (en) 1998-06-30 2000-09-19 Kabushiki Kaisha Toshiba Composite material substrate for solar cells, and solar cell
US6303096B1 (en) 1998-11-10 2001-10-16 Mitsubishi Chemical Corporation Pitch based carbon fibers
JP2001349013A (ja) * 2000-04-04 2001-12-21 Canon Inc 外装材および太陽電池モジュール、その製造方法、製造装置および施工方法、並びに建築物および太陽光発電装置
JP2002075359A (ja) * 2000-08-25 2002-03-15 Mitsubishi Gas Chem Co Inc 非水溶媒二次電池用炭素材料とその製造法および該炭素材料を用いた二次電池
US6939490B2 (en) * 2002-12-11 2005-09-06 Honeywell International Inc. Process for unidirectional infiltration of preform with molten resin or pitch
US7342171B2 (en) * 2003-01-23 2008-03-11 Solar Intergrated Technologies, Inc. Integrated photovoltaic roofing component and panel
CN1739801A (zh) 2004-08-27 2006-03-01 上海生物制品研究所 一种流行性感冒病毒裂解疫苗及其制备方法
US7407901B2 (en) 2005-01-12 2008-08-05 Kazak Composites, Incorporated Impact resistant, thin ply composite structures and method of manufacturing same
US20070186971A1 (en) * 2005-01-20 2007-08-16 Nanosolar, Inc. High-efficiency solar cell with insulated vias
US7632701B2 (en) * 2006-05-08 2009-12-15 University Of Central Florida Research Foundation, Inc. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor
WO2009012346A1 (en) * 2007-07-16 2009-01-22 Ascent Solar Technologies, Inc. Methods for fabricating p-type cadmium selenide
US8017861B2 (en) 2007-09-18 2011-09-13 Solopower, Inc. Substrate preparation for thin film solar cell manufacturing
US7745047B2 (en) * 2007-11-05 2010-06-29 Nanotek Instruments, Inc. Nano graphene platelet-base composite anode compositions for lithium ion batteries
US20090151847A1 (en) * 2007-12-17 2009-06-18 Aruna Zhamu Process for producing laminated exfoliated graphite composite-metal compositions for fuel cell bipolar plate applications
US8968820B2 (en) * 2008-04-25 2015-03-03 Nanotek Instruments, Inc. Process for producing hybrid nano-filament electrodes for lithium batteries
EP2324263B1 (en) 2008-09-18 2021-10-27 Carlisle Brake & Friction, Inc CARBON FIBER REINFORCED CARBONaceous MATRIX COMPOSITE FOR BRAKE PAD BACK PLATE and method of manufacturing
US8382740B2 (en) 2009-03-25 2013-02-26 King Saud University Trocarless intravenous cannula with a multifilament tip
US7900413B2 (en) 2009-04-22 2011-03-08 Joel Stanley Method of securing flexible solar panel to PVC roofing membrane
TW201042065A (en) 2009-05-22 2010-12-01 Ind Tech Res Inst Methods for fabricating copper indium gallium diselenide (CIGS) compound thin films
US9184323B2 (en) * 2010-10-15 2015-11-10 Cyprian Emeka Uzoh Method and substrates for making photovoltaic cells

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4923648A (en) * 1984-06-26 1990-05-08 Mitsubishi Kasei Corporation Process for the production of pitch-type carbon fibers
US5225070A (en) * 1991-07-29 1993-07-06 Clemson University Oxygenated pitch and processing same
US6334895B1 (en) * 1998-07-20 2002-01-01 The University Of Wyoming Research Corporation System for producing manufactured materials from coal combustion ash
WO2001002632A1 (en) * 1999-07-01 2001-01-11 University Of Leeds Highly oriented mesophase pitch-based graphite tape and bulk carbon material

Also Published As

Publication number Publication date
JP2014500339A (ja) 2014-01-09
US20180158972A1 (en) 2018-06-07
EP2628187A2 (en) 2013-08-21
CN103404015A (zh) 2013-11-20
US20120091387A1 (en) 2012-04-19
US9905713B2 (en) 2018-02-27
EP2628239A2 (en) 2013-08-21
WO2012051603A3 (en) 2012-06-07
US20120090683A1 (en) 2012-04-19
US20160027939A1 (en) 2016-01-28
WO2012051603A2 (en) 2012-04-19
CN103404015B (zh) 2016-08-10
JP5934711B2 (ja) 2016-06-15
EP2628187A4 (en) 2017-12-20
WO2012051602A2 (en) 2012-04-19
CN103348069A (zh) 2013-10-09
WO2012051602A3 (en) 2012-06-28
AU2011315846A1 (en) 2013-05-02
EP2628239A4 (en) 2014-06-04
US10333014B2 (en) 2019-06-25
JP6126992B2 (ja) 2017-05-10
AU2011315847A1 (en) 2013-05-02
EP2628239B1 (en) 2019-07-24
JP2013539928A (ja) 2013-10-28
US9184323B2 (en) 2015-11-10
AU2011315846B2 (en) 2016-02-25

Similar Documents

Publication Publication Date Title
CN103348069B (zh) 用于材料应用的方法和基底
Xue et al. CuSbSe2 as a potential photovoltaic absorber material: studies from theory to experiment
CA2840059C (en) Thermoelectric conversion element and thermoelectric conversion power generation device
US20110272027A1 (en) Solar photovoltaic devices and methods of making them
CA2996898C (en) Thermoelectric conversion element and thermoelectric conversion module
US20200259063A1 (en) Method for manufacturing flexible thermoelectric structure
JP2010245238A (ja) 光電変換装置およびその製造方法ならびに硫化物焼結体ターゲットの製造方法
US20110020969A1 (en) Method for applying layers onto thermoelectric materials
KR101606990B1 (ko) 적층체 및 이를 포함하는 박막형 태양전지
KR101656842B1 (ko) 태양전지용 CZTS/CZTSe계 박막 및 제조방법 및 그 방법에 의해 제조된 CZTS/CZTSe계 박막
AU2015264935B2 (en) Method and substrates for making photovoltaic cells
JP5260373B2 (ja) 薄膜太陽電池の製造方法
KR102274190B1 (ko) 열계면층을 포함하는 반도체 소자 패키지 및 그 제조 방법
Ebe et al. Fabrication of perovskite solar cells by reaction between spin‐coated precursor films and CH3NH3I vapor
JP2007027464A (ja) 光電変換装置の製造方法及び光電変換装置並びに光発電装置
Aninat et al. Formation of Cu (In1-xAlx) Se2 by selenising RF magnetron sputtered Cu/Al/In precursor layers
JP2012079770A (ja) 金属カルコゲナイド粒子の製造方法および光電変換装置の製造方法
JP2011114242A (ja) 半導体層の製造方法および光電変換装置の製造方法
JP2011114243A (ja) 半導体層の製造方法および光電変換装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180116

Termination date: 20191014