CN103404015B - 用于制作光伏电池的方法和衬底 - Google Patents

用于制作光伏电池的方法和衬底 Download PDF

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CN103404015B
CN103404015B CN201180060472.0A CN201180060472A CN103404015B CN 103404015 B CN103404015 B CN 103404015B CN 201180060472 A CN201180060472 A CN 201180060472A CN 103404015 B CN103404015 B CN 103404015B
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photovoltaic cell
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methods according
mesophase pitch
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CN103404015A (zh
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赛普里安·埃米卡·尤佐
埃米卡·奇克伍比
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Abstract

制作光伏电池的方法和用于制作光伏电池的设备被提供。所述光伏电池能够具有由复合材料制成的衬底。所述复合材料能够通过混合粘结剂和增强物理性质的材料来形成混合物而被形成。所述粘结剂能够是沥青,诸如中间相沥青。所述增强物理性质的材料能够是玻璃纤维。所述光伏电池的衬底能够是柔性的,使得所述光伏电池能够被应用在各种表面上。

Description

用于制作光伏电池的方法和衬底
相关申请的交叉引用:
本申请要求2010年10月15日提交并且题为“NOVEL SUBSTRATES FOR MATERIALS APPLICATION”的、序号为61/455,060的美国临时专利申请和2010年10月15日提交并且题为“NOVEL SUBSTRATES FOR PHOTO VOLTAIC APPLICATIONS”的、序号为61/455,061的美国临时专利申请的优先权,为了所有目的通过引用将其整体并入本文。
技术领域
本发明涉及绿色技术领域。更具体地,本发明涉及光伏电池领域。
背景技术
传统上,钠钙玻璃被用于薄膜太阳能电池的制作。问题与将钠钙玻璃或不锈钢片材用作衬底的光伏电池关联。钠钙玻璃衬底是易碎的。此外,钠钙玻璃衬底是刚性的而不是柔性的,这将其应用限制于仅平坦表面。而且,钠钙玻璃衬底是电绝缘体并且是昂贵的,其大约是PV制作成本的40%。衬底材料的高成本导致成品器件的高价格。此外,钠钙玻璃衬底的Tg (玻璃化转变温度)限制硒化温度。将用不锈钢片材或金属片材作为衬底的较新的PV电池与用钠钙玻璃作为衬底的传统PV电池相比较,不锈钢/金属片材衬底具有比钠钙玻璃衬底更有柔性和导电性的结构。柔性增加了PV电池的用途。尽管如此,轧制的不锈钢片材衬底不如钠钙玻璃衬底的方面在于不锈钢衬底具有更粗糙的表面。而且,对于CIGS半导体而言包含在典型的不锈钢衬底中的金属能够是金属污染(诸如Fe、Ni及其他杂质)的源,这是因为所包含的金属(诸如Fe和Ni)能够扩散通过Mo晶粒边界以使电池短路。特别是,在惰性气氛中典型的硒化温度在500°C与750°C之间。在这样的温度下,Fe和Ni的扩散速率变得非常快并且动力学有利于Fe扩散通过Mo晶粒之间的开放晶粒边界。并且,在这个高温下,Mo上面的CIS(铜铟硒化物)或CIGS(铜铟镓(联)硒化物:四面体键合半导体)层中的熔融Se扩散通过Mo晶粒边界以攻击Mo下方的不锈衬底,从而使太阳能电池短路。这些缺点典型地导致电池具有大大降低的效率并且衬底常常报废。高报废损失以及伴随的低效率电池产生昂贵的太阳能电池,这不具有商业可行性。
发明内容
制作光伏电池的方法和用于制作光伏电池的新衬底被提供。所述光伏电池能够具有由复合材料制成的衬底。所述复合材料能够通过混合粘结剂和增强物理性质的材料来形成混合物(mixer)而被形成。所述粘结剂能够是沥青,诸如中间相沥青或新中间相沥青。所述增强物理性质的材料能够是导电材料、非导电材料或玻璃纤维。所述光伏电池的衬底能够是柔性的或刚性的,使得所述光伏电池能够被应用在各种表面上。
在第一方面,光伏电池包括衬底和能够吸收光的吸收剂,其中所述衬底包括碳基材料、硅基材料或其组合,其中所述碳基材料、所述硅基材料或其所述组合是大体上无金属的。在一些实施例中,所述碳基材料、所述硅基材料或其所述组合包括沥青。在其他实施例中,所述沥青包括中间相沥青、新中间相沥青、定向碳结构或其组合。在一些其他实施例中,所述吸收剂包括CIGS、CIG或CIS。在一些实施例中,所述光伏电池还包括CdS、Mo、Cr或其组合。在其他实施例中,所述衬底包括玻璃纤维。在一些其他实施例中,所述衬底包括导电材料。在一些实施例中,所述衬底包括绝缘体。在其他实施例中,所述衬底是柔性的。在其他实施例中,所述衬底是刚性的。
在第二方面,制造光伏电池的方法包括:制备包含碳基材料、硅基材料、定向碳结构或其组合的衬底,其中所述碳基材料、所述硅基材料或其所述组合是大体上无金属的;以及将光吸收剂与所述衬底耦合。在一些实施例中,所述碳基材料、所述硅基材料或其所述组合包括沥青。在其他实施例中,所述方法还包括在所述光吸收剂与所述衬底之间涂覆粘接层。在一些其他实施例中,所述粘接层包括Cr。在一些实施例中,所述方法还包括在所述粘接层与所述光吸收剂之间形成反射层。在其他实施例中,所述反射层包括Mo。在一些实施例中,所述光吸收剂包括CIGS、CIS或CIG。在其他实施例中,所述方法还包括执行硒化。在一些其他实施例中,所述沥青包括中间相沥青。在一些实施例中,所述衬底包括硅/硅酮基材料或碳基材料,诸如玻璃纤维和陶瓷化合物。
在第三方面,制造光伏电池的方法包括:通过执行溶剂提取、热处理或其组合来形成中间相沥青或新中间相沥青;烘干所述中间相或新中间相沥青;添加填充材料;挤出复合材料的片材;以及在高于200°C的温度下使所述沥青稳定或交联,使得所述光伏电池的衬底被形成。在一些实施例中,所述方法还包括在200°C以上执行所述中间相或新中间相沥青以片材形式的挤压。在一些实施例中,所述片材结构与胶合板结构类似。在其他实施例中,所述方法还包括在600°C与3000°C之间的温度下执行高温处理。在一些其他实施例中,所述填充材料包括玻璃纤维。在一些实施例中,所述填充材料包括导体。在其他实施例中,所述填充材料包括绝缘体。在一些其他实施例中,所述方法还包括将光吸收剂与所述衬底耦合。在一些实施例中,所述光吸收剂包括CIGS、CIS或CIG。
在第四方面,形成绝缘设备的方法包括:用玻璃纤维来制备包含沥青的复合材料以及将所述复合材料与建筑结构耦合,其中所述衬底能够反射热、光或其组合。在一些实施例中,所述复合材料能够反射90%以上的入射光,所述入射光诸如为IR(红外辐射)光和UV(紫外)光。在一些实施例中,所述复合材料能够减少进入到所述建筑结构中的热。在一些实施例中,所述复合材料能够导电。
附图说明
图1示意了依照一些实施例的制作材料的方法。
图2A和2B示意了依照一些实施例的用于制作衬底材料的设备。
图3示意了依照一些实施例的光伏电池。
图4示意了依照一些实施例的光伏电池制造方法。
图5示意了依照一些实施例的中间相沥青片材制作方法。
图6示意了依照一些实施例的中间相沥青片材制作方法。
具体实施方式
在本发明的一些方面,廉价的和/或回收利用的工业废弃物被用来制作各种材料。所述材料在工业中具有广泛的应用。例如,所述材料能够被用作光伏电池的衬底的部分。在本文中所使用的工业废弃物包括来自石油化学工业的沥青以及来自煤炭工业和燃煤发电厂的煤灰。上述废弃产品(诸如沥青或煤灰)能够被用作柔性和非柔性薄膜光伏电池的衬底材料。上面列举的工业废弃物是为了示意的目的所使用的示例。其他工业废弃产品是可适用的。
在本发明的一些其他方面,材料和复合结构通过与其他含碳和或非含碳材料一起将从沥青(包括市场上可买到的沥青)获得的各向同性的、各向异性的中间相沥青、石墨化沥青或液晶用作粘结剂或基质材料来形成。
在下文中,依照一些实施例公开了制作材料的方法和用于制作材料的设备。图1示意了依照一些实施例的制作材料的方法100。方法100能够包括添加期望的/预选的材料、产生具有所添加的材料的层压体、使粘结剂材料稳定和/或交联以及碳化。方法100的步骤是可选的。附加的步骤能够被添加到方法100中。执行方法100的步骤的顺序能够采用任何次序。在下面示意了执行方法100的更多细节。方法100能够从步骤102开始。
在步骤104处,基于材料的选定材料性质来添加选定的材料/成分。在一些实施例中,编织玻璃纤维材料(硅胶基和/或碳基材料)通过溅射、辊涂、浸渍、拉绒或其组合而被注入以粘结剂材料。与粘结剂材料结合的玻璃纤维材料形成涂有粘结剂材料的玻璃纤维材料。本领域的普通技术人员会理解,其他方法也能够被用于结合粘结剂材料与所添加的材料以获得预定的物理相互作用和性质,诸如混合、掺杂以及压制。在其他实施例中,非编织玻璃纤维材料被用来与粘结剂材料结合。本文所述的粘结剂材料能够是沥青、煤灰或能够被用作粘结剂材料的任何其他材料。本领域的普通技术人员会理解,粘结剂材料能够是具有粘附性质的任何材料,诸如粘合剂、胶、胶合剂以及涂料。粘附性质包括在预定义条件下显示这样的性质的材料,所述预定义条件诸如为温度、压力、溶剂、共反应物或其组合。例如,当粘结剂材料在诸如10 psi的压力下展示出粘附性质而在正常大气压力(例如1 atm)下没有粘附性时,该粘结剂材料在本发明的范围内。各种其他成分能够在步骤104处基于产品的预选性质而被添加。实施例中的一些在以下段落中被讨论。
在步骤106处,产生包括所添加的材料的层压体。在一些实施例中,上面所形成的涂有粘结剂材料的玻璃纤维材料被轧制或挤压以形成层压体。在一些实施例中,层压体的厚度薄于20微米。在一些其他实施例中,层压体的厚度厚于2000微米。在一些其他实施例中,层压体的厚度在20微米与2000微米之间。在一些实施例中,层压体的宽度是在10cm与1m之间的范围内,使得层压材料的片材能够被制作用于进一步的切割。在一些其他实施例中,层压体的宽度在0.5cm与3cm之间的范围内,使得衬底的单元/矩形形式被形成以便随时可用。本领域的普通技术人员将会理解,取决于衬底的选定用途,层压体的任何宽度是可适用的。
在一些实施例中,层压体包括具有被中间相沥青层的顶面上和底面上的玻璃纤维层夹在中间的中间相沥青层的结构。例如,夹层结构/层压体通过制备大小为1m2并且厚度为3mm的玻璃纤维片材的第一层、在第一层之上添加大小为1m2并且厚度为5mm的粘结剂材料(诸如中间相沥青)的第二层、添加大小为1m2并且厚度为2mm的玻璃纤维片材的第三层以及用压力压制挤压机进行挤压来形成厚度为7mm的夹层层压体来形成。在其他实施例中,层压体包括被两层沥青夹在中间的玻璃纤维层。在一些实施例中,沥青为低分子量的新中间相沥青或者为任何其他粘结剂。
在步骤108处,粘结剂材料在氧环境中在软化温度以下被稳定或交联以形成经处理的材料。在一些实施例中,所述温度在200°C到450°C的范围内。本领域的普通技术人员会理解,其他温度范围也是可适用的。在一些实施例中,温度接近软化温度。在一些其他实施例中,温度高于软化温度。
在步骤110处,经处理的材料被热处理以使混合物碳化。在一些实施例中,步骤110的温度在800°C到1700°C的范围内。在一些其他实施例中,温度在700°C到3000°C的范围内。在一些实施例中,步骤110在诸如氮气的惰性环境下以2psi与40psi之间的压力来执行。在一些实施例中,所施加的压力在降温步骤期间被维持,使得片材结构的收缩和翘曲能够被最小化。方法100能够在步骤112处停止。
不同的材料性质被选择用于不同的应用,诸如热、声音、电、振动、信号以及光传导性/绝缘性、材料强度以及材料耐久性。各种材料能够被添加在复合材料中以增强预定性质。在一些实施例中,短切的或颗粒状的导电材料被用作加强剂或材料,使得所产生的材料的导电性能够被增强。在一些其他实施例中,短切的或颗粒状的非导电材料被用作加强剂或材料,使得所产生的材料的绝缘性质被增强。在一些实施例中,被结合的材料包括煤灰、磨碎的玻璃、磨碎的石英、玻璃珠、短切玻璃纤维、短切石英纤维云母薄片、陶瓷粉/珠/薄片以及非含碳材料。在一些其他实施例中,被结合的材料包括导电金属或金属合金粉、薄片或纤维。在一些实施例中,被结合的材料包括纳米颗粒,诸如金属纳米颗粒和金属氧化物纳米颗粒(例如Cr2O3纳米颗粒作为用于成核的催化剂被结合)。本领域的普通技术人员会理解,包括铜、铬、碳粉或碳薄片、石墨薄片或其组合在内的任何导电材料能够被添加。
在一些实施例中,衬底材料(由方法100所产生的材料)的电阻率被选择。在一些实施例中,不到5%的量的、有或没有金属氧化物或金属化合物的硫或有机硫化合物在交联步骤之前被掺合到中间相沥青粘结剂中,使得玻璃碳在高温碳化步骤期间被形成。能够被添加以例如控制衬底材料的质地或强度并且提高或降低衬底材料的电阻率的任何其他材料在本发明的范围内。
在下文中,用于制作衬底材料的设备被公开。图2A和2B示意了依照一些实施例的用于制作衬底材料的设备200和211。诸如玻璃纤维216和粘结剂材料218的反应物能够分别通过料斗210和212而被添加到混合装置202中。所述反应物能够采用溶剂和/或组合物的固体和/或液体形式。在一些实施例中,混合装置202能够是挤压机。混合装置202能够通过诸如螺旋混合器的混合器217来混合所添加的材料。本领域的普通技术人员会理解,任何数目的料斗能够被包括在混合装置202中。混合装置202和/或设备200能够在空气气氛、惰性气氛(诸如N2和Ar)或加压气氛(诸如2-10 psi和1-3 atm)下执行。料斗210和212能够是用于固体和流体的密封室、开顶室、铰接式开顶室,所述流体诸如为气体、液体以及超临界流体。混合装置202能够包括模具214,从而允许输出材料201按期望的形式和厚度成形,所述厚度诸如为1mm - 10mm。在一些实施例中,设备200能够包括碾轧机204,诸如牵引碾轧机。碾轧机204能够使用其滚轮和传动带将输出材料201压缩到期望的厚度,诸如20到500微米。图1所述的层压体能够根据层压体的厚度使用本文所述的混合装置202和/或碾轧机204以批量生产模式或卷对卷地来制作。输出材料201能够在预定温度下在烘箱206中被加热,所述预定温度诸如为用于使粘结剂材料稳定或交联的200°C - 450°C以及用于使材料碳化的600°C - 1700°C。在一些实施例中,在稳定和碳化步骤期间,受控的流体环境被用来对衬底的两个主要侧强加压力。例如,烘箱/熔炉206能够排列有微孔205(具有多个加热区),其中与熔炉的宽度或长度相比上内熔炉壁与下内熔炉壁之间的间隙是微不足道的。在一些实施例中,惰性气体在碳化过程中通过烘箱/熔炉206中在层压体两侧的微孔205被引入到烘箱/熔炉206中,并且流体的压力被控制以在层压体(输出材料201)两侧发散,使得诸如惰性气体的流体防止片材层压体接触烘箱/熔炉206的主要侧。在一些实施例中,烘箱206的流体出口203的间隙被减小,使得所施加的流体能够被用来在交联、碳化或其组合期间对衬底强加压力。在一些实施例中,设备200能够包括一个或多个冷却装置207。输出材料201能够被切割机208切割和存储为预定尺寸,诸如1m2。切割机208能够是压力压切机。
与突出设置装置202类似,图2B示出了拉挤成型装置220。拉挤成型装置220能够连续不断地制造复合材料。纤维片材226能够被拉动通过沥青浴室224,所述沥青浴室由沥青源222来供给。与图2A及其关联的文本描述的过程类似,图2B中的输出材料201能够由碾轧机204进一步压缩、由烘箱206加热、由冷却器207降温并且由切割机208确定大小。
应用
通过使用依照一些实施例在本文中公开的方法和设备所制作的材料能够被应用在各种应用中并且以各种方式使用。例如,在一些实施例中,一个以上的层压体能够通过中间相沥青粘结剂的薄层来堆叠和接合。片材的定向在交联步骤之前能够是彼此平行、斜交叉或采用相对于彼此的任何选定定向。单个片材或堆叠的片材能够通过已知方法来切割并且用适当的模具形成以用于制作预选结构或形状,诸如太阳能电池的衬底。
在一些实施例中,交替导电的层结构被选择,其能够通过使高度导电的层压体彼此接合来制作,其中通过使用更具绝缘性的玻璃碳粘结剂使高度导电的层压体彼此接合。所形成的具有不同导电性的交替层的材料对于低温或高温应用能够被用作电容器。例如,该电容器能够具有包括高度绝缘的层的第一层、导电层的第二层、高度绝缘的层的第三层、导电层的第四层以及高度绝缘的层的第五层的结构。通过本文公开的方法和设备所制作的衬底能够被用作光伏电池的柔性衬底、用于电子产品和建筑应用的电磁屏蔽、外壳。
光伏电池
在下文中,依照实施例提供了使用上面制作的材料/衬底来制作光伏电池(PV)的方法。
依照一些实施例的制作光伏电池的方法和用于制作光伏电池的实体被公开。在一些实施例中,光伏电池包括复合或非复合含碳衬底,其中针对薄膜太阳能电池的制作,各向同性的或各向异性的中间相沥青、新中间相沥青或其组合被用作用于平面和非平面片材的制作的粘结剂、基质材料或净材料。在下文中,依照一些实施例提供了具有使用本文公开的材料的衬底的光伏电池。
图3示意了依照一些实施例的光伏电池300。在一些实施例中,光伏电池300包括衬底302、粘接层304、Mo层306、吸收剂层308、缓冲层310(诸如CdS层)以及TCO(透明导电氧化物)层312。光伏电池300的衬底302能够包括中间相/新中间相沥青骨干衬底。在一些实施例中,衬底302的厚度能够是20微米到1mm或更大。在一些其他实施例中,衬底302的厚度能够厚于5mm。本领域的普通技术人员会理解,衬底302的任何厚度是可适用的。衬底302的物理和材料性质可通过基于应用添加预选填料来调整。衬底302的刚性/柔性、导电性、热膨胀程度以及表面粗糙度全部是可调整和可控制的。例如,导电衬底302能够通过在制造过程期间将导电材料、催化剂、纳米颗粒以及金属氧化物(例如填料)添加到粘结剂材料中来制作。当所期望的是绝缘衬底302时,绝缘衬底能够通过在制造过程期间将绝缘材料添加到粘结剂材料中来制作。类似地,柔性衬底302能够通过调整粘结剂材料的硬度或刚度或待添加的材料的类型来制作。使用本文公开的方法和材料制作的衬底302能够比通过典型方法制作的衬底经受更高的硒化温度范围。因为使用本文公开的方法和材料制作的衬底302具有最少的金属杂质一直到没有不合需要的金属杂质,所以当在高温下加热光伏电池时电池的短路能够被避免。
在一些实施例中,光伏电池300包括粘接层304。粘接层304能够是Cr层并且通过溅射及其他已知方法而被涂覆在衬底302之上。粘接层304的厚度能够在20nm到1000nm之间。本领域的普通技术人员会理解,粘接层304的任何厚度是可适用的,诸如2mm或更厚。
在一些实施例中,光伏电池300包括Mo层306。Mo层306能够在粘接层304之上。Mo层306能够被用作后接触部并且能够将大部分未被吸收的光反射回到吸收剂层308(诸如CIGS层)中。Mo层306能够是通过诸如溅射和蒸发的PVD(物理气相沉积)和诸如CVD(化学气相沉积)的其他已知方法所沉积的薄膜。Mo层306的厚度能够在100nm到2000nm之间。本领域的普通技术人员会理解,Mo层306的任何厚度都是可适用的,诸如2微米或更厚。在一些实施例中,多个Mo层306能够被包括以获得预定义的Mo膜厚度。在一些实施例中,薄层Mo合金(诸如2nm到10nm的MoSi层)被插入Mo层压体内以修改涂覆在合金层上的Mo膜的晶粒结构。
在一些实施例中,光伏电池300包括吸收剂层308,诸如CIGS层或CIG/CIS层。吸收剂层308能够通过沉积/溅射/蒸发诸如Cu、In、Ga或其组合的前体材料/层而形成在Mo层306上,在其之后是硒化。吸收剂能够使用形成CISG层的典型方法来形成。在一些实施例中,前体材料/层能够在惰性环境下的硒化步骤之前涂有氟化钠的薄层,所述惰性环境下的硒化步骤在诸如H2Se或Se(g)的过量硒环境中在500°C与800°C的温度之间持续5分钟到120分钟。
在一些实施例中,光伏电池300包括缓冲层310。缓冲层310能够是n型CdS。所述缓冲层能够通过典型方法涂覆在吸收剂层308上。在一些实施例中,光伏电池300包括透明导电氧化物层(TCO)312。TCO层312能够掺杂有A1。TCO层能够收集电子并且使电子脱离电池,同时吸收尽可能少的光。在一些实施例中,光伏电池300在TCO层312上包括电气布线元件314以用于传导电子信号和电。在一些实施例中,光伏电池300能够与聚合物膜层叠以形成柔性太阳能电池。
图4示意了依照一些实施例的光伏电池制造方法400。方法400能够从步骤402开始。在步骤404处,粘接层被涂覆在衬底上。衬底能够使用上述方法来制造。在一些实施例中,粘接层包含Cr或Cr片材/层。在一些实施例中,衬底是中间相基质衬底。该中间相基质衬底能够是光伏电池的底部电极。在一些其他实施例中,衬底是复合含碳衬底。在其他实施例中,衬底是非复合含碳衬底。衬底能够是各向同性的或各向异性的中间相沥青、新中间相沥青或其组合。本领域的普通技术人员会理解,有粘附性的或在预定条件下有粘附性的其他材料是可适用的。在步骤406处,Mo层被涂覆在粘接层上,这能够将衬底与吸收剂层耦合。在步骤408处,诸如Cu、In、Ga以及Se(铜铟镓硒化物)的前体材料被涂覆在Mo层上。在步骤410处,硒化被执行。在硒化过程中,Se能够在高温下以气相(例如作为H2Se或单质Se)被供应,并且Se通过吸收和后续扩散而变为结合到所述膜中。通过执行硒化,光伏电池的吸收剂能够被形成。在步骤412处,吸收剂(CIGS)层上的CdS层形成被执行。在步骤414处,TCO的层被涂覆在CdS层上。在步骤416处,布线元件被制作在TCO上。方法400能够在步骤418处停止。在下文中,形成能够被用作上述方法400中的衬底的中间相沥青片材的方法被提供。
图5示意了依照一些实施例的中间相沥青片材制作方法500。方法500从步骤502开始。在步骤504处,沥青被添加。沥青能够是来自Ashland 240或260(石油沥青)、来自煤的可石墨化的各向同性含碳沥青。本领域的普通技术人员会理解,沥青能够来自各种源,诸如直接来自工业废弃物。在步骤506处,对沥青执行溶剂提取和热处理。在步骤508处,中间相或新中间相材料被形成。在一些实施例中,中间相或新中间相材料包含占组合物的50%以上的液晶。在步骤510处,烘干中间相或新中间相材料并且碎化被执行。在步骤512处,片材挤出在250°C到300°C下的惰性环境气氛中被执行。在步骤514,片材稳定通过在250°C到300°C下加热片材来执行。在步骤516处,高温处理在600°C到3000°C的惰性环境下执行。方法500能够在步骤518处停止。在下文中,将填充材料结合到衬底材料/中间相片材材料中的方法被提供。
图6示意了依照一些实施例的中间相沥青片材制作方法600。方法600从步骤602开始。在步骤604处,沥青被添加。沥青能够是来自Ashland 240或260(石油沥青)、来自煤的可石墨化的各向同性含碳沥青。本领域的普通技术人员会理解,沥青能够来自各种源,诸如直接来自工业废弃物。在步骤606处,溶剂提取和热处理被执行。在步骤608处,中间相或新中间相材料被形成。在一些实施例中,中间相或新中间相材料包含占组合物的50%以上的液晶。在步骤610处,烘干中间相或新中间相材料并且碎化被执行。在步骤611处,填充材料被添加。能够基于衬底(产品)的预选物理/化学性质来选择待添加的填料。在步骤612处,片材挤出在250°C到300°C的惰性环境气氛中被执行。在步骤614处,片材稳定通过在250°C到300°C下加热片材来执行。在步骤616处,低熔点和/或低分子量的中间相沥青被形成,其能够被用来层叠多个片材材料。方法600能够在步骤618处停止。
上述所有步骤都是可选的。执行包括在上述方法中的步骤的顺序能够采用任何次序。附加的步骤能够被添加。
本申请能够被用于为工业应用制作各种材料,诸如太阳能电池的衬底。在操作中,具有采用本文提供的方法制作的柔性衬底的光伏太阳能电池能够被弯曲为所期望的形状并且被应用在非平坦表面上。
本文所用的术语沥青能够包括焦油、沥青烯、粘弹性聚合物、柏油、地沥青、二硫化碳以及树脂。在一些实施例中,所选粘结剂(诸如沥青)或所添加材料的高粘性提供了将金属颗粒保持在衬底中并且防止它们使PV电池短路的功能。在一些实施例中,使用本文公开的方法及组合物制作的材料/衬底能够被用作隔热装置,像热涂料,其能够被安装/应用在建筑结构的屋顶或墙壁的一部分上或者作为建筑结构的屋顶或墙壁的一部分,所述建筑结构诸如为房屋或谷仓。在一些实施例中,材料/衬底包括具有高电导率的导电材料,因此材料/衬底能够被用于导电。在一些其他实施例中,材料/衬底具有热和/或光的高反射率,并且衬底和材料能够被用作建筑结构上的反射镜。本文所述的反射镜能够反射/隔绝/隔离热、光或其组合。在一些实施例中,衬底/材料能够反射90%以上的入射光或诸如IR和UV的选定波长的光。
已就结合细节的具体实施例而言对本发明进行了描述以促进对本发明的构造和操作的原理的理解。在本文中对具体实施例及其细节进行这样的参考不是旨在限制随附于其的权利要求的范围。对于本领域的技术人员而言将显而易见的是,可以在为示意所选择的实施例中进行其他各种修改而不背离如权利要求所限定的本发明的精神和范围。

Claims (22)

1.一种光伏电池,其包括
a)能够吸收光的吸收剂;以及
b)衬底,其中所述衬底包括具有被顶面上的第一光纤玻璃层与底面上的第二光纤玻璃层夹在中间的沥青层的层压体结构,其中所述沥青层包括在高温碳化期间通过将不到5%的量的硫或有机硫化合物增加到中间相沥青粘结剂而形成的玻璃碳。
2.根据权利要求1所述的光伏电池,其中所述吸收剂包括铜铟镓(联)硒化物(CIGS)或铜铟硒化物(CIS)。
3.根据权利要求1所述的光伏电池,所述光伏电池还包括CdS、Mo、Cr或其组合。
4.根据权利要求1所述的光伏电池,其中所述衬底包括导电材料。
5.根据权利要求1所述的光伏电池,其中所述衬底包括绝缘体。
6.根据权利要求1所述的光伏电池,其中所述衬底是柔性的。
7.根据权利要求1所述的光伏电池,其中所述衬底是刚性的。
8.一种制造光伏电池的方法,其包括
a)制备衬底,所述衬底包含具有被顶面上的第一光纤玻璃层与底面上的第二光纤玻璃层夹在中间的沥青层的层压体结构,其中所述沥青层包括在高温碳化期间通过将不到5%的量的硫或有机硫化合物增加到中间相沥青粘结剂而形成的玻璃碳;并且
b)将光吸收剂与所述衬底耦合。
9.根据权利要求8所述的方法,其还包括在所述光吸收剂与所述衬底之间涂覆粘接层。
10.根据权利要求9所述的方法,其中所述粘接层包括Cr。
11.根据权利要求9所述的方法,其还包括在所述粘接层与所述光吸收剂之间形成反射层。
12.根据权利要求11所述的方法,其中所述反射层包括Mo。
13.根据权利要求8所述的方法,其中所述光吸收剂包括铜铟镓(联)硒化物(CIGS)或铜铟硒化物(CIS)。
14.根据权利要求8所述的方法,其还包括执行硒化。
15.一种制造光伏电池的方法,其包括
a)通过执行溶剂提取、热处理或其组合来形成中间相沥青;
b)烘干所述中间相沥青;
c)添加填充材料;以及
d)在高于200℃的温度下使所述中间相沥青稳定或交联,使得所述光伏电池的衬底被形成,其中,所述衬底包括具有被顶面上的第一光纤玻璃层与底面上的第二光纤玻璃层夹在中间的沥青层的层压体结构,其中所述沥青层包括在高温碳化期间通过将不到5%的量的硫或有机硫化合物增加到中间相沥青粘结剂而形成的玻璃碳。
16.根据权利要求15所述的方法,其还包括在200℃以上执行所述中间相沥青的挤压。
17.根据权利要求15所述的方法,其还包括在600℃与3000℃之间的温度下执行高温处理。
18.根据权利要求15所述的方法,其中所述填充材料包括玻璃纤维。
19.根据权利要求15所述的方法,其中所述填充材料包括导体。
20.根据权利要求15所述的方法,其中所述填充材料包括绝缘体。
21.根据权利要求15所述的方法,其还包括将光吸收剂与所述衬底耦合。
22.根据权利要求21所述的方法,其中所述光吸收剂包括铜铟镓(联)硒化物(CIGS)或铜铟硒化物(CIS)。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3791097A (en) * 1973-01-19 1974-02-12 Tremco Mfg Co Method of detecting and repairing a structural roof damaged by subsurface moisture
US6303096B1 (en) * 1998-11-10 2001-10-16 Mitsubishi Chemical Corporation Pitch based carbon fibers
CN1739201A (zh) * 2003-01-23 2006-02-22 太阳能集成技术有限公司 集成式光伏屋面系统

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919387A (en) 1972-12-26 1975-11-11 Union Carbide Corp Process for producing high mesophase content pitch fibers
US4208267A (en) * 1977-07-08 1980-06-17 Exxon Research & Engineering Co. Forming optically anisotropic pitches
US4184942A (en) * 1978-05-05 1980-01-22 Exxon Research & Engineering Co. Neomesophase formation
US4341621A (en) * 1979-03-26 1982-07-27 Exxon Research & Engineering Co. Neomesophase formation
US4331620A (en) 1980-02-25 1982-05-25 Exxon Research & Engineering Co. Process for producing carbon fibers from heat treated pitch
US4528087A (en) * 1982-03-09 1985-07-09 Mitsubishi Petrochemical Co., Ltd. Process for producing mesophase pitch
US4465586A (en) 1982-06-14 1984-08-14 Exxon Research & Engineering Co. Formation of optically anisotropic pitches
US4443324A (en) 1982-06-14 1984-04-17 Exxon Research And Engineering Co. Low melting mesophase pitches
JPS5982466A (ja) * 1982-10-27 1984-05-12 信越化学工業株式会社 カ−ボン繊維の表面改質方法
DE3584693D1 (de) * 1984-06-26 1992-01-02 Mitsubishi Chem Ind Verfahren zur herstellung von kohlenstoffasern des pechtyps.
JP2566589B2 (ja) * 1987-09-18 1996-12-25 三菱化学株式会社 炭素系複合成形体原料の製造方法
US4986943A (en) * 1989-02-28 1991-01-22 The Aerospace Corporation Method for oxidation stabilization of pitch-based matrices for carbon-carbon composites
US5259947A (en) * 1990-12-21 1993-11-09 Conoco Inc. Solvated mesophase pitches
US5225070A (en) 1991-07-29 1993-07-06 Clemson University Oxygenated pitch and processing same
US5325860A (en) 1991-11-08 1994-07-05 Mayo Foundation For Medical Education And Research Ultrasonic and interventional catheter and method
DE4333407C1 (de) 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
JP3031197B2 (ja) 1994-04-11 2000-04-10 三菱化学株式会社 ピッチ系炭素繊維
US5501906A (en) * 1994-08-22 1996-03-26 Minnesota Mining And Manufacturing Company Ceramic fiber tow reinforced metal matrix composite
JP3651932B2 (ja) * 1994-08-24 2005-05-25 キヤノン株式会社 光起電力素子用裏面反射層及びその形成方法並びに光起電力素子及びその製造方法
JP2984595B2 (ja) 1996-03-01 1999-11-29 キヤノン株式会社 光起電力素子
JPH1036677A (ja) * 1996-07-12 1998-02-10 Amoco Corp 充填剤入り熱可塑性b段階ピッチプレフォームとそれから作った複合体
JPH1171190A (ja) * 1997-08-26 1999-03-16 Toshiba Ceramics Co Ltd 炭化珪素−シリコン複合材料の製造方法
US6121540A (en) * 1998-06-30 2000-09-19 Kabushiki Kaisha Toshiba Composite material substrate for solar cells, and solar cell
US6334895B1 (en) 1998-07-20 2002-01-01 The University Of Wyoming Research Corporation System for producing manufactured materials from coal combustion ash
AU5690300A (en) 1999-07-01 2001-01-22 University Of Leeds, The Highly oriented mesophase pitch-based graphite tape and bulk carbon material
JP2001349013A (ja) 2000-04-04 2001-12-21 Canon Inc 外装材および太陽電池モジュール、その製造方法、製造装置および施工方法、並びに建築物および太陽光発電装置
JP2002075359A (ja) 2000-08-25 2002-03-15 Mitsubishi Gas Chem Co Inc 非水溶媒二次電池用炭素材料とその製造法および該炭素材料を用いた二次電池
US6939490B2 (en) * 2002-12-11 2005-09-06 Honeywell International Inc. Process for unidirectional infiltration of preform with molten resin or pitch
CN1739801A (zh) 2004-08-27 2006-03-01 上海生物制品研究所 一种流行性感冒病毒裂解疫苗及其制备方法
US7407901B2 (en) 2005-01-12 2008-08-05 Kazak Composites, Incorporated Impact resistant, thin ply composite structures and method of manufacturing same
US20070186971A1 (en) * 2005-01-20 2007-08-16 Nanosolar, Inc. High-efficiency solar cell with insulated vias
US7632701B2 (en) * 2006-05-08 2009-12-15 University Of Central Florida Research Foundation, Inc. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor
US20090020149A1 (en) 2007-07-16 2009-01-22 Woods Lawrence M Hybrid Multi-Junction Photovoltaic Cells And Associated Methods
US8017861B2 (en) * 2007-09-18 2011-09-13 Solopower, Inc. Substrate preparation for thin film solar cell manufacturing
US7745047B2 (en) * 2007-11-05 2010-06-29 Nanotek Instruments, Inc. Nano graphene platelet-base composite anode compositions for lithium ion batteries
US20090151847A1 (en) * 2007-12-17 2009-06-18 Aruna Zhamu Process for producing laminated exfoliated graphite composite-metal compositions for fuel cell bipolar plate applications
US8968820B2 (en) * 2008-04-25 2015-03-03 Nanotek Instruments, Inc. Process for producing hybrid nano-filament electrodes for lithium batteries
US8789665B2 (en) * 2008-09-18 2014-07-29 Carlisle Brake & Friction, Inc. Carbon fiber reinforced carbon matrix composite for brake pad back plate
US8382740B2 (en) 2009-03-25 2013-02-26 King Saud University Trocarless intravenous cannula with a multifilament tip
US7900413B2 (en) 2009-04-22 2011-03-08 Joel Stanley Method of securing flexible solar panel to PVC roofing membrane
TW201042065A (en) * 2009-05-22 2010-12-01 Ind Tech Res Inst Methods for fabricating copper indium gallium diselenide (CIGS) compound thin films
CN103404015B (zh) * 2010-10-15 2016-08-10 赛普里安·埃米卡·尤佐 用于制作光伏电池的方法和衬底

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3791097A (en) * 1973-01-19 1974-02-12 Tremco Mfg Co Method of detecting and repairing a structural roof damaged by subsurface moisture
US6303096B1 (en) * 1998-11-10 2001-10-16 Mitsubishi Chemical Corporation Pitch based carbon fibers
CN1739201A (zh) * 2003-01-23 2006-02-22 太阳能集成技术有限公司 集成式光伏屋面系统

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