CN103326704A - Magnetic control memristor equivalent circuit - Google Patents
Magnetic control memristor equivalent circuit Download PDFInfo
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- CN103326704A CN103326704A CN2013102517624A CN201310251762A CN103326704A CN 103326704 A CN103326704 A CN 103326704A CN 2013102517624 A CN2013102517624 A CN 2013102517624A CN 201310251762 A CN201310251762 A CN 201310251762A CN 103326704 A CN103326704 A CN 103326704A
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Abstract
The invention discloses a magnetic control memristor equivalent circuit to solve the problems that no commercial memristor product is available so far in the prior art, and people only can conduct a study according to a mathematic model and a circuit behavioral model of a memristor and cannot conduct an experimental study on the characteristics of the memristor. The magnetic control memristor equivalent circuit comprises a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a first triode T1, a second triode T2, a first operational amplifier U1A, a second operational amplifier U1B, a third operational amplifier U1C, a fourth operational amplifier U1D, a capacitor C1, a reference power supply Vref and a multiplier M1. The magnetic control memristor equivalent circuit is equivalent to a magnetic control memristor, simulates the magnetic control memristor easily and effectively, and conveniently meets the requirement of the experimental study on the magnetic control memristor.
Description
Technical field
The present invention is specifically related to a kind of magnetic control memristor equivalent electric circuit, belongs to the memristor technical field.
Background technology
Memristor is a kind of novel non-linearity passive electronic components that polarity is arranged, and its resistance changes with the variation of the electric charge of flowing through, and has memory characteristic after the outage.The concept of memristor after proposing, until just produced nano level memristor element by the scientist in HP laboratory in 2008 in 1971.But because the difficulty in nanometer technology and the manufacturing there is no commercial memristor product so far, people can only study for Mathematical Modeling and the circuit behavior model of memristor, can't carry out experimental study to the characteristic of memristor.
The people such as Hyongsuk Kim according to the definition of memristor with Analog Circuit Design memristor equivalent electric circuit simulator, and the memory characteristic of memristor network is studied (referring to Hyongsuk Kim, Maheshwar Pd. Sah, Changju Yang, Seongik Cho, Leon O. Chua. IEEEMemristor Emulator for Memristor Circuit Applications, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS-I:REGULAR PAPERS, VOL. 59, pp. 2422-2431,2012).Although should really simulate some characteristic of memristor by the equivalence circuit, should the equivalence circuit on the one hand with the TiO in HP laboratory
2Memristor is irrelevant, also can't react on the other hand the Boundary Moving characteristic of memristor inside.
Daniel Batas and Horst Fiedler carry out modeling and simulating to the TiO2 memristor model in HP laboratory, propose a kind of magnetic control and recalled the device Mathematical Modeling of resistance, made up the SPICE macro model (referring to Daniel Batas, and Horst Fiedler, A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor Modeling, IEEE Transactions on Nanotechnology, vol. 10, pp.250-255, March 2011.).Simulation result shows that this model has the resistance memory characteristic, but can only launch software emulation research to memristor as the SPICE macro model, can't carry out in the laboratory experimental study.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, proposed a kind of equivalent electric circuit of magnetic control memristor.
The equivalent electric circuit of a kind of magnetic control memristor of the present invention, comprise the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the 7th resistance R 7, the 8th resistance R 8, the 9th resistance R 9, the tenth resistance R 10, the 11 resistance R 11, the first triode T1, the second triode T2, the first operational amplifier U1A, the second operational amplifier U1B, the 3rd operational amplifier U1C, four-operational amplifier U1D, capacitor C 1, reference power source Vref and multiplier M1
The input of one end of described the first resistance R 1, multiplier M1 is connected with the anode Pos of memristor, and the other end of the first resistance R 1 is connected with the reverse input end of the first operational amplifier U1A, an end of the second resistance R 2; The positive input ground connection of the first operational amplifier U1A, positive supply termination+VDD, negative supply termination-VDD, output is connected with the other end of the second resistance R 2, an end of the 3rd resistance R 3, and the other end of the 3rd resistance R 3 is connected with an end of capacitor C 1, the reverse input end of the second operational amplifier U1B; The positive input ground connection of the second operational amplifier U1B, positive supply termination+VDD, negative supply termination-VDD, output is connected with the other end of capacitor C 1, an end of the 4th resistance R 4, the other end of the 4th resistance R 4 is connected with an end of the 5th resistance R 5, the base stage of the first triode T1, the other end ground connection of the 5th resistance R 5, the collector electrode of the first triode T1 is connected with an end of the 6th resistance R 6, the reverse input end of the 3rd operational amplifier U1C, the other end of the 6th resistance R 6 is connected with the positive pole of reference power source Vref, the minus earth of reference power source Vref; The positive input of the 3rd operational amplifier U1C is connected with an end of the 7th resistance R 7, the other end ground connection of the 7th resistance R 7, positive supply termination+VDD of the 3rd operational amplifier U1C, negative supply termination-VDD, output is connected with an end of the 8th resistance R 8, the emitter of the other end of the 8th resistance R 8 and the first triode T1, the emitter of the second triode T2 connects, the base earth of the second triode T2, the second triode T2 collector electrode and an end of the tenth resistance R 10, the reverse input end of four-operational amplifier U1D connects, the positive input of four-operational amplifier U1D is connected with an end of the 9th resistance R 9, the other end ground connection of the 9th resistance R 9, positive supply termination+VDD of four-operational amplifier U1D, negative supply termination-VDD, the other end of output and the tenth resistance R 10, another input of multiplier M1 connects, the output of multiplier M1 is connected with an end of the 11 resistance R 11, and the other end of the 11 resistance R 11 is connected with the negative terminal Neg of memristor.
The invention has the beneficial effects as follows: the equivalence of the present invention and magnetic control memristor, simply, effectively the magnetic control memristor is simulated, convenient and satisfied requirement to magnetic control memristor experimental study.
Description of drawings
Fig. 1 is the equivalent electric circuit of magnetic control memristor of the present invention.
Embodiment
The equivalent electric circuit of a kind of magnetic control memristor of the present invention, comprise the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the 7th resistance R 7, the 8th resistance R 8, the 9th resistance R 9, the tenth resistance R 10, the 11 resistance R 11, the first triode T1, the second triode T2, the first operational amplifier U1A, the second operational amplifier U1B, the 3rd operational amplifier U1C,
Four-operational amplifier U1D, capacitor C 1, reference power source Vref and multiplier M1,
The input of one end of described the first resistance R 1, multiplier M1 is connected with the anode Pos of memristor, and the other end of the first resistance R 1 is connected with the reverse input end of the first operational amplifier U1A, an end of the second resistance R 2; The positive input ground connection of the first operational amplifier U1A, positive supply termination+VDD, negative supply termination-VDD, output is connected with the other end of the second resistance R 2, an end of the 3rd resistance R 3, and the other end of the 3rd resistance R 3 is connected with an end of capacitor C 1, the reverse input end of the second operational amplifier U1B; The positive input ground connection of the second operational amplifier U1B, positive supply termination+VDD, negative supply termination-VDD, output is connected with the other end of capacitor C 1, an end of the 4th resistance R 4, the other end of the 4th resistance R 4 is connected with an end of the 5th resistance R 5, the base stage of the first triode T1, the other end ground connection of the 5th resistance R 5, the collector electrode of the first triode T1 is connected with an end of the 6th resistance R 6, the reverse input end of the 3rd operational amplifier U1C, the other end of the 6th resistance R 6 is connected with the positive pole of reference power source Vref, the minus earth of reference power source Vref; The positive input of the 3rd operational amplifier U1C is connected with an end of the 7th resistance R 7, the other end ground connection of the 7th resistance R 7, positive supply termination+VDD of the 3rd operational amplifier U1C, negative supply termination-VDD, output is connected with an end of the 8th resistance R 8, the emitter of the other end of the 8th resistance R 8 and the first triode T1, the emitter of the second triode T2 connects, the base earth of the second triode T2, the second triode T2 collector electrode and an end of the tenth resistance R 10, the reverse input end of four-operational amplifier U1D connects, the positive input of four-operational amplifier U1D is connected with an end of the 9th resistance R 9, the other end ground connection of the 9th resistance R 9, positive supply termination+VDD of four-operational amplifier U1D, negative supply termination-VDD, the other end of output and the tenth resistance R 10, another input of multiplier M1 connects, the output of multiplier M1 is connected with an end of the 11 resistance R 11, and the other end of the 11 resistance R 11 is connected with the negative terminal Neg of memristor.
First's circuit is the sign-changing amplifier that is made of the first operational amplifier U1A and the first resistance R 1, the second resistance R 2, and output voltage v1 (t) with the pass of memristor input voltage v (t) is
The second portion circuit is integrating circuit, is comprised of the 3rd resistance R 3, capacitor C 1 and the second operational amplifier U1B, and integrating circuit output voltage v2 (t) with the relation of input voltage v1 (t) is
In the formula (2), by selecting the 3rd suitable resistance R 3 and the value of capacitor C 1, make the value of output voltage v2 (t) be limited in 0 and 1V between.V2 (t) has simulated the situation of movement on the inner doped semiconductor of memristor border, i.e. the state variable w of memristor equation (t).
The third part circuit is the exponent circuit with temperature-compensating, is comprised of the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the 7th resistance R 7, the 8th resistance R 8, the 9th resistance R 9, the tenth resistance R 10, the first triode T1, the second triode T2, the 3rd operational amplifier U1C, four-operational amplifier U1D and reference power source Vref.Exponent circuit output with the pass of input voltage is
In the formula (3), parameter
The 4th partial circuit is multiplier circuit, realizes the Voltammetric Relation of memristor, and output voltage v5 (t) is the product of two input voltage v3 of multiplier (t) and v4 (t), namely
In the formula (4),
, comprehensive above (1), (2), (3), (4) formula can get
In the formula (5), parameter
, w (t) equates the λ in the parameter lambda cotype (3) with v2 (t) in the formula (2); In the formula (6)
Magnetic flux for memristor.
Claims (1)
1. the equivalent electric circuit of a magnetic control memristor, comprise the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the 7th resistance R 7, the 8th resistance R 8, the 9th resistance R 9, the tenth resistance R 10, the 11 resistance R 11, the first triode T1, the second triode T2, the first operational amplifier U1A, the second operational amplifier U1B, the 3rd operational amplifier U1C,
Four-operational amplifier U1D, capacitor C 1, reference power source Vref and multiplier M1;
It is characterized in that: the input of an end of described the first resistance R 1, multiplier M1 is connected with the anode Pos of memristor, and the other end of the first resistance R 1 is connected with the reverse input end of the first operational amplifier U1A, an end of the second resistance R 2; The positive input ground connection of the first operational amplifier U1A, positive supply termination+VDD, negative supply termination-VDD, output is connected with the other end of the second resistance R 2, an end of the 3rd resistance R 3, and the other end of the 3rd resistance R 3 is connected with an end of capacitor C 1, the reverse input end of the second operational amplifier U1B; The positive input ground connection of the second operational amplifier U1B, positive supply termination+VDD, negative supply termination-VDD, output is connected with the other end of capacitor C 1, an end of the 4th resistance R 4, the other end of the 4th resistance R 4 is connected with an end of the 5th resistance R 5, the base stage of the first triode T1, the other end ground connection of the 5th resistance R 5, the collector electrode of the first triode T1 is connected with an end of the 6th resistance R 6, the reverse input end of the 3rd operational amplifier U1C, the other end of the 6th resistance R 6 is connected with the positive pole of reference power source Vref, the minus earth of reference power source Vref; The positive input of the 3rd operational amplifier U1C is connected with an end of the 7th resistance R 7, the other end ground connection of the 7th resistance R 7, positive supply termination+VDD of the 3rd operational amplifier U1C, negative supply termination-VDD, output is connected with an end of the 8th resistance R 8, the emitter of the other end of the 8th resistance R 8 and the first triode T1, the emitter of the second triode T2 connects, the base earth of the second triode T2, the second triode T2 collector electrode and an end of the tenth resistance R 10, the reverse input end of four-operational amplifier U1D connects, the positive input of four-operational amplifier U1D is connected with an end of the 9th resistance R 9, the other end ground connection of the 9th resistance R 9, positive supply termination+VDD of four-operational amplifier U1D, negative supply termination-VDD, the other end of output and the tenth resistance R 10, another input of multiplier M1 connects, the output of multiplier M1 is connected with an end of the 11 resistance R 11, and the other end of the 11 resistance R 11 is connected with the negative terminal Neg of memristor.
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103995200A (en) * | 2014-05-23 | 2014-08-20 | 中国人民解放军国防科学技术大学 | Memristor programmable equivalent circuit based on optical coupler |
| CN104134383A (en) * | 2014-07-25 | 2014-11-05 | 华北电力大学（保定） | Experimental device for simulating memory resistor element |
| CN104393986A (en) * | 2014-12-03 | 2015-03-04 | 王忠林 | Memristor based four-wing hyper-chaos system establishing method and circuit implementation |
| CN104486061A (en) * | 2014-12-03 | 2015-04-01 | 李敏 | Construction method and circuit of classic Lorenz hyper-chaos system based on memristor |
| CN105373677A (en) * | 2015-12-10 | 2016-03-02 | 杭州电子科技大学 | Magnetically-controlled memory capacitor equivalent circuit |
| CN105373678A (en) * | 2015-12-10 | 2016-03-02 | 杭州电子科技大学 | Circuit for memory capacitor simulator |
| CN105373679A (en) * | 2015-12-10 | 2016-03-02 | 杭州电子科技大学 | Analog circuit for realizing capacitance characteristic of capacitor with memory function |
| CN105389443A (en) * | 2015-12-10 | 2016-03-09 | 杭州电子科技大学 | Memory sensor logarithmic model equivalent circuit |
| CN105701306A (en) * | 2016-01-19 | 2016-06-22 | 杭州电子科技大学 | Index type magnetron memcapacitor equivalent circuit |
| CN106067320A (en) * | 2016-07-07 | 2016-11-02 | 江南大学 | A kind of simulating equivalent circuit of piecewise linearity magnetic control memristor |
| CN104134383B (en) * | 2014-07-25 | 2017-01-04 | 华北电力大学（保定） | A kind of experimental provision for simulating memristor element |
| CN109584929A (en) * | 2017-09-29 | 2019-04-05 | 西华大学 | A kind of magnetic control memristor circuit |
| CN110210118A (en) * | 2019-05-31 | 2019-09-06 | 南京邮电大学通达学院 | A kind of memristor based on bipolar transistor |
| CN113078883A (en) * | 2021-02-25 | 2021-07-06 | 广东技术师范大学 | Magnetic flux control type memcapacitor equivalent circuit and control method thereof |
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Cited By (22)
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| CN103995200A (en) * | 2014-05-23 | 2014-08-20 | 中国人民解放军国防科学技术大学 | Memristor programmable equivalent circuit based on optical coupler |
| CN104134383A (en) * | 2014-07-25 | 2014-11-05 | 华北电力大学（保定） | Experimental device for simulating memory resistor element |
| CN104134383B (en) * | 2014-07-25 | 2017-01-04 | 华北电力大学（保定） | A kind of experimental provision for simulating memristor element |
| CN104393986B (en) * | 2014-12-03 | 2016-08-24 | 国网山东省电力公司临清市供电公司 | The construction method of a kind of four wing hyperchaotic system based on memristor and circuit realiration |
| CN104393986A (en) * | 2014-12-03 | 2015-03-04 | 王忠林 | Memristor based four-wing hyper-chaos system establishing method and circuit implementation |
| CN104486061A (en) * | 2014-12-03 | 2015-04-01 | 李敏 | Construction method and circuit of classic Lorenz hyper-chaos system based on memristor |
| CN105373678B (en) * | 2015-12-10 | 2018-11-02 | 杭州电子科技大学 | One kind recalling container emulator circuit |
| CN105373679B (en) * | 2015-12-10 | 2018-11-02 | 杭州电子科技大学 | It is a kind of to realize the analog circuit for recalling capacitor characteristic |
| CN105389443A (en) * | 2015-12-10 | 2016-03-09 | 杭州电子科技大学 | Memory sensor logarithmic model equivalent circuit |
| CN105373679A (en) * | 2015-12-10 | 2016-03-02 | 杭州电子科技大学 | Analog circuit for realizing capacitance characteristic of capacitor with memory function |
| CN105373677A (en) * | 2015-12-10 | 2016-03-02 | 杭州电子科技大学 | Magnetically-controlled memory capacitor equivalent circuit |
| CN105373678A (en) * | 2015-12-10 | 2016-03-02 | 杭州电子科技大学 | Circuit for memory capacitor simulator |
| CN105373677B (en) * | 2015-12-10 | 2018-09-07 | 杭州电子科技大学 | A kind of magnetic control recalls container equivalent circuit |
| CN105389443B (en) * | 2015-12-10 | 2018-11-02 | 杭州电子科技大学 | One kind recalling sensor logarithmic model equivalent circuit |
| CN105701306B (en) * | 2016-01-19 | 2018-11-27 | 杭州电子科技大学 | Exponential type magnetic control recalls container equivalent circuit |
| CN105701306A (en) * | 2016-01-19 | 2016-06-22 | 杭州电子科技大学 | Index type magnetron memcapacitor equivalent circuit |
| CN106067320A (en) * | 2016-07-07 | 2016-11-02 | 江南大学 | A kind of simulating equivalent circuit of piecewise linearity magnetic control memristor |
| CN109584929A (en) * | 2017-09-29 | 2019-04-05 | 西华大学 | A kind of magnetic control memristor circuit |
| CN110210118A (en) * | 2019-05-31 | 2019-09-06 | 南京邮电大学通达学院 | A kind of memristor based on bipolar transistor |
| CN110210118B (en) * | 2019-05-31 | 2024-03-22 | 南京邮电大学通达学院 | Memristor based on bipolar transistor |
| CN113078883A (en) * | 2021-02-25 | 2021-07-06 | 广东技术师范大学 | Magnetic flux control type memcapacitor equivalent circuit and control method thereof |
| CN113078883B (en) * | 2021-02-25 | 2023-06-23 | 广东技术师范大学 | Magnetic flux control type memcapacitor equivalent circuit and control method thereof |
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Application publication date: 20130925 |